Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601404
K. Garre, M. Cahay, P. Kosel, J. Fraser, D. J. Lockwood, V. Semet, V. Binh, B. Kanchibhotla, Supriyo Bandyopadhyay, B. Das
Several nanoscale arrays of metallic, semiconductor, and organic carbon compounds (carbon nanopearls) have been fabricated on nanoporous flexible alumina and silicon templates based on a new self-assembly growth mode. They were obtained using pulsed laser deposition, thermal evaporation, e-beam evaporation, or RF magnetron sputtering. The different moieties that were observed include nanodomes and nanodots (gold, nickel, cobalt, and aluminum nitride), nanonecklaces (carbon nanopearl), and nanopinetrees (gold) self assembled on flexible alumina templates. A nanoneedle array was also self assembled by e-beam evaporation of nickel on silicon substrates that were rendered nanoporous by the use of a porous alumina mask. The physical processes underpinning the new self assembly growth mode have been studied based on extensive characterization of the templates prior to and after deposition of the various metallic, semiconductor, and organic compounds. These include atomic force microscopy (AFM), X-ray diffraction (XRD) analysis, Raman spectroscopy and field emission-scanning electron microscopy (FE-SEM). Some of the arrays have been tested as potential candidates for new cold cathode arrays for vacuum electronic applications using the scanning electron field emission microscopy (SAFEM) technique.
{"title":"Self-assembled growth on flexible alumina and nanoporous silicon templates","authors":"K. Garre, M. Cahay, P. Kosel, J. Fraser, D. J. Lockwood, V. Semet, V. Binh, B. Kanchibhotla, Supriyo Bandyopadhyay, B. Das","doi":"10.1109/NANO.2007.4601404","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601404","url":null,"abstract":"Several nanoscale arrays of metallic, semiconductor, and organic carbon compounds (carbon nanopearls) have been fabricated on nanoporous flexible alumina and silicon templates based on a new self-assembly growth mode. They were obtained using pulsed laser deposition, thermal evaporation, e-beam evaporation, or RF magnetron sputtering. The different moieties that were observed include nanodomes and nanodots (gold, nickel, cobalt, and aluminum nitride), nanonecklaces (carbon nanopearl), and nanopinetrees (gold) self assembled on flexible alumina templates. A nanoneedle array was also self assembled by e-beam evaporation of nickel on silicon substrates that were rendered nanoporous by the use of a porous alumina mask. The physical processes underpinning the new self assembly growth mode have been studied based on extensive characterization of the templates prior to and after deposition of the various metallic, semiconductor, and organic compounds. These include atomic force microscopy (AFM), X-ray diffraction (XRD) analysis, Raman spectroscopy and field emission-scanning electron microscopy (FE-SEM). Some of the arrays have been tested as potential candidates for new cold cathode arrays for vacuum electronic applications using the scanning electron field emission microscopy (SAFEM) technique.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83747439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601423
P. Kuo, C. Lin, C. Peng, Y.-C. Fu, C. Liu
The blockage of the hole transport due to the excess hole in SiGe quantum dots was observed in the metal-oxide-semiconductor (MOS) tunneling diodes for the first time. The hole tunneling current from Pt gate electrode to p-type Si dominates the inversion current at the positive gate bias and is seven order of magnitude higher than the Al gate/oxide/p-Si device. The SiGe quantum dots confine the excess holes in the valence band, and form the repulsive barrier to reduce the hole transport current from Pt to SiGe quantum dots by three order of magnitude as compared to the Pt/oxide/p-Si device. This repulsive barrier also reduces the hole tunneling current from SiGe quantum dots to Pt for the accumulation current at positive gate bias.
{"title":"Novel transport mechanism of SiGe dot MOS tunneling diodes","authors":"P. Kuo, C. Lin, C. Peng, Y.-C. Fu, C. Liu","doi":"10.1109/NANO.2007.4601423","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601423","url":null,"abstract":"The blockage of the hole transport due to the excess hole in SiGe quantum dots was observed in the metal-oxide-semiconductor (MOS) tunneling diodes for the first time. The hole tunneling current from Pt gate electrode to p-type Si dominates the inversion current at the positive gate bias and is seven order of magnitude higher than the Al gate/oxide/p-Si device. The SiGe quantum dots confine the excess holes in the valence band, and form the repulsive barrier to reduce the hole transport current from Pt to SiGe quantum dots by three order of magnitude as compared to the Pt/oxide/p-Si device. This repulsive barrier also reduces the hole tunneling current from SiGe quantum dots to Pt for the accumulation current at positive gate bias.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87873347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601352
R. Giridharagopal, K. Kelly
Scanning tunneling microscopy (STM) has been used to study polydiacetylene nanowires, a candidate material for molecular electronic interconnects. STM analysis across different voltages shows that the substrate material contributes to hole doping in the nanowires. Changing the substrate material causes a substantial change in the apparent height of the nanowires in STM images, revealing a previously-overlooked dependence of the electronic structure upon the substrate electrode material. Polydiacetylene nanowires are also shown to desorb due to interactions with the STM tip. These nanowires can either fully desorb or be cut into shorter segments depending on the strength of the tip-nanowire interaction. In both desorption cases the surrounding diacetylene-derivative monolayer order is fully restored within 100 ms. Desorption is a critical factor in evaluating the stability of these nanowires.
{"title":"Atomic-scale analysis of polydiacetylene nanowires by scanning tunneling microscopy","authors":"R. Giridharagopal, K. Kelly","doi":"10.1109/NANO.2007.4601352","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601352","url":null,"abstract":"Scanning tunneling microscopy (STM) has been used to study polydiacetylene nanowires, a candidate material for molecular electronic interconnects. STM analysis across different voltages shows that the substrate material contributes to hole doping in the nanowires. Changing the substrate material causes a substantial change in the apparent height of the nanowires in STM images, revealing a previously-overlooked dependence of the electronic structure upon the substrate electrode material. Polydiacetylene nanowires are also shown to desorb due to interactions with the STM tip. These nanowires can either fully desorb or be cut into shorter segments depending on the strength of the tip-nanowire interaction. In both desorption cases the surrounding diacetylene-derivative monolayer order is fully restored within 100 ms. Desorption is a critical factor in evaluating the stability of these nanowires.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78850801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601278
T.-H. Cheng, M. Liao, C. Liu
In order to overcome the speed limitation of electrical interconnects, we integrate ultra large scale integrated (ULSI) circuits with the electro-optics. Besides the modulator, both the light emitting diode (LED) and the detector are essential to achieve this goal. In order to get greater functionality, we integrate Si chip with the Si based electro-optics. For the time being, the light emitter is the key point of the electro-optics based on Si. In this work, the metal-oxide-semiconductor tunneling diode is used to emit electroluminescence. Raman spectroscopy reveals that the expected pure Germanium (Ge) quantum dot (QD) grown by ultra high vacuum chemical vapor deposition (UHVCVD) at 625degC exhibits significant intermixing with the average Ge composition of ~ 56%. It also shows that the top SiGe quantum dot of the 20-layer QD sample (66% relaxation) have more relaxation than the 5-layer QD sample (58% relaxation). The photoluminescence (PL) emission peak intensity from the 20-layer QD is increasing with the temperature decreasing. Besides the 1.1 mum infrared from the band edge of Si, the 1.5 mum infrared emission due to the radiative recombination between the electrons in the Si conduction band and the holes in the SiGe valence band is also observed. The emission line shape can be fitted by the electron-hole-plasma recombination model. The electroluminescence from the top SiGe quantum dot shows that the 20-layer QD sample (0.76% compressive strain) has the higher emission peak energy at ~0.84 eV as compared with the 5-layer QD sample (0.93% compressive strain) with the emission peak energy at ~0.82 eV.
{"title":"Electroluminescence from strained SiGe quantum dot light-emitting diodes","authors":"T.-H. Cheng, M. Liao, C. Liu","doi":"10.1109/NANO.2007.4601278","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601278","url":null,"abstract":"In order to overcome the speed limitation of electrical interconnects, we integrate ultra large scale integrated (ULSI) circuits with the electro-optics. Besides the modulator, both the light emitting diode (LED) and the detector are essential to achieve this goal. In order to get greater functionality, we integrate Si chip with the Si based electro-optics. For the time being, the light emitter is the key point of the electro-optics based on Si. In this work, the metal-oxide-semiconductor tunneling diode is used to emit electroluminescence. Raman spectroscopy reveals that the expected pure Germanium (Ge) quantum dot (QD) grown by ultra high vacuum chemical vapor deposition (UHVCVD) at 625degC exhibits significant intermixing with the average Ge composition of ~ 56%. It also shows that the top SiGe quantum dot of the 20-layer QD sample (66% relaxation) have more relaxation than the 5-layer QD sample (58% relaxation). The photoluminescence (PL) emission peak intensity from the 20-layer QD is increasing with the temperature decreasing. Besides the 1.1 mum infrared from the band edge of Si, the 1.5 mum infrared emission due to the radiative recombination between the electrons in the Si conduction band and the holes in the SiGe valence band is also observed. The emission line shape can be fitted by the electron-hole-plasma recombination model. The electroluminescence from the top SiGe quantum dot shows that the 20-layer QD sample (0.76% compressive strain) has the higher emission peak energy at ~0.84 eV as compared with the 5-layer QD sample (0.93% compressive strain) with the emission peak energy at ~0.82 eV.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85458222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601215
A. Nieuwoudt, Y. Massoud
The development of high density integrated capacitors is crucial for the implementation of high performance mixed-signal integrated circuits. In this paper, we propose three possible high density integrated capacitor configurations based on multi-walled carbon nanotubes (MWCNT). We develop an RLC model for the MWCNT-based capacitor configurations and examine the design trade-off between capacitance per area and losses due to parasitic resistance and inductance. The results indicate that the proposed MWCNT based capacitor configurations can potentially offer orders of magnitude larger capacitance per area and comparable quality factors to traditional metal-based integrated capacitors.
{"title":"High density integrated capacitors using multi-walled carbon nanotubes","authors":"A. Nieuwoudt, Y. Massoud","doi":"10.1109/NANO.2007.4601215","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601215","url":null,"abstract":"The development of high density integrated capacitors is crucial for the implementation of high performance mixed-signal integrated circuits. In this paper, we propose three possible high density integrated capacitor configurations based on multi-walled carbon nanotubes (MWCNT). We develop an RLC model for the MWCNT-based capacitor configurations and examine the design trade-off between capacitance per area and losses due to parasitic resistance and inductance. The results indicate that the proposed MWCNT based capacitor configurations can potentially offer orders of magnitude larger capacitance per area and comparable quality factors to traditional metal-based integrated capacitors.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91248631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601204
H. Kitsuki, M. Suzuki, Q. Ngo, K. Gleason, P. Wilhite, A. Cassell, Jun Li, C. Yang
Current-induced breakdown phenomena of carbon nanofibers (CNFs) for future on-chip interconnect applications are presented. Scanning transmission electron microscopy (STEM) techniques are developed to study the structural damage by current stress, including in situ electrical measurement with STEM, and sample-preparation-free STEM imaging. The analysis shows that the breakdown occurs along graphitic layers comprising the CNF and that the maximum current density has strong correlation with electrical resistivity. The effect of heat dissipation into the underlying substrate is also studied using different experimental configurations.
{"title":"Current-induced breakdown of carbon nanofibers for interconnect applications","authors":"H. Kitsuki, M. Suzuki, Q. Ngo, K. Gleason, P. Wilhite, A. Cassell, Jun Li, C. Yang","doi":"10.1109/NANO.2007.4601204","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601204","url":null,"abstract":"Current-induced breakdown phenomena of carbon nanofibers (CNFs) for future on-chip interconnect applications are presented. Scanning transmission electron microscopy (STEM) techniques are developed to study the structural damage by current stress, including in situ electrical measurement with STEM, and sample-preparation-free STEM imaging. The analysis shows that the breakdown occurs along graphitic layers comprising the CNF and that the maximum current density has strong correlation with electrical resistivity. The effect of heat dissipation into the underlying substrate is also studied using different experimental configurations.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91319016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601175
Lei Zhang, Hao Dong, Ning Deng, Min Ren, Jiuning Hu, Pei-yi Chen
We present a model to explain the spin-polarized injection from ferromagnetic metal into organic semiconductor. Thermionic emission mechanism is considered as the dominant transport mechanism at the interface at low bias. Boundary condition is determined from the relationship of the spin-dependent quasi-electrochemical potentials across the interface. The dependences of the current spin polarization on the control parameters, which include the Schottky barrier height at the interface, the spontaneous spin polarization in ferromagnetic metal, and the bias, are demonstrated.
{"title":"Spin-polarized thermionic emission at the interface of ferromagnetic metal and organic semiconductor","authors":"Lei Zhang, Hao Dong, Ning Deng, Min Ren, Jiuning Hu, Pei-yi Chen","doi":"10.1109/NANO.2007.4601175","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601175","url":null,"abstract":"We present a model to explain the spin-polarized injection from ferromagnetic metal into organic semiconductor. Thermionic emission mechanism is considered as the dominant transport mechanism at the interface at low bias. Boundary condition is determined from the relationship of the spin-dependent quasi-electrochemical potentials across the interface. The dependences of the current spin polarization on the control parameters, which include the Schottky barrier height at the interface, the spontaneous spin polarization in ferromagnetic metal, and the bias, are demonstrated.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81754294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601252
Z. Hou, M. Yee
We present the electronic structures and transport properties of hydrogen-saturated graphene ribbons and its dependence on its termination edge, ribbon width, and impurity. The band structures, transmission spectrum, and current-voltage (I-V) characteristics of graphene ribbons have been calculated by using first-principles electronic structure methods and non-equilibrium Green's functions technique. Our calculated results show that the graphene ribbons with zigzag shaped edges exhibit nonlinear behavior of I-V characteristics due to the overlapping of pi* and pi bands around Fermi level. As the width of zigzag chain of graphene ribbons increases, the overlapping of pi* and pi bands is enhanced and the voltage range for linear I-V response becomes narrower. The graphene ribbons with armchair shaped edges exhibit semiconducting properties and the band gap decreases with increasing ribbon width. The doping of B or N in graphene ribbons with armchair shaped edges slightly increases the current at lower bias voltage.
{"title":"Electronic and transport properties of graphene nanoribbons","authors":"Z. Hou, M. Yee","doi":"10.1109/NANO.2007.4601252","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601252","url":null,"abstract":"We present the electronic structures and transport properties of hydrogen-saturated graphene ribbons and its dependence on its termination edge, ribbon width, and impurity. The band structures, transmission spectrum, and current-voltage (I-V) characteristics of graphene ribbons have been calculated by using first-principles electronic structure methods and non-equilibrium Green's functions technique. Our calculated results show that the graphene ribbons with zigzag shaped edges exhibit nonlinear behavior of I-V characteristics due to the overlapping of pi* and pi bands around Fermi level. As the width of zigzag chain of graphene ribbons increases, the overlapping of pi* and pi bands is enhanced and the voltage range for linear I-V response becomes narrower. The graphene ribbons with armchair shaped edges exhibit semiconducting properties and the band gap decreases with increasing ribbon width. The doping of B or N in graphene ribbons with armchair shaped edges slightly increases the current at lower bias voltage.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79952109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601341
L. Lee, Ru Zhang, Jin Wang, Bojun Yang
In this paper, we propose a novel structure of optical fiber to investigate its amplification and nonlinear properties. We employ both nano and optical fiber technologies in our proposed novel structure so-called Quantum Well Optical Fiber (QWOF) where an InP quantum well exists between the core and inner cladding of proposed QWOF. In the developed model, InP is chosen as a semiconductor dopant to examine its amplification and nonlinear properties. From our experimental results, the proposed QWOF shows its significant amplification properties for wavelength between 1080 nm and 1491 nm. Amplification properties also found in wavelength 906 nm~1044 nm and 1524 nm~1596 nm. Though the exact nonlinear parameter could not be determined, a lower bound of 3.87x106 W-1/m was calculated for gamma where an effective core area has value 2.27236x10-11 m2.
{"title":"Examining amplification and nonlinear properties of novel Quantum Well Optical Fiber (QWOF) for future photonic communications","authors":"L. Lee, Ru Zhang, Jin Wang, Bojun Yang","doi":"10.1109/NANO.2007.4601341","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601341","url":null,"abstract":"In this paper, we propose a novel structure of optical fiber to investigate its amplification and nonlinear properties. We employ both nano and optical fiber technologies in our proposed novel structure so-called Quantum Well Optical Fiber (QWOF) where an InP quantum well exists between the core and inner cladding of proposed QWOF. In the developed model, InP is chosen as a semiconductor dopant to examine its amplification and nonlinear properties. From our experimental results, the proposed QWOF shows its significant amplification properties for wavelength between 1080 nm and 1491 nm. Amplification properties also found in wavelength 906 nm~1044 nm and 1524 nm~1596 nm. Though the exact nonlinear parameter could not be determined, a lower bound of 3.87x106 W-1/m was calculated for gamma where an effective core area has value 2.27236x10-11 m2.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79952621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601417
S. Ramesh Ekanayake, T. Lehmann, A. Dzurak, R. G. Clark
Quantum bit (qubit) control and readout requires controller-qubit-observer systems for rapid control signal generation and injection to the qubit gates, and observation of their final state projections. Conventionally, for solid-state qubits, this is achieved by generating the control signal at 300 K and transmitting it along very long coaxial cables that span from 300 K to sub-K (typically les 500 mK), then reading out the response from charge proximity sensors such as single-electron transistors along similar lengths of cable. Our approach is to fabricate the classical controller and observer circuits using a commercial foundry processed silicon-on-sapphire (SOS) RFCMOS technology for operation at low temperatures (either at 4.2 K, 1 K, or sub-K). We have demonstrated SOS-CMOS NFET and PFET device operation at 4.2 K, and sub-K that showed deviations from their 300 K characteristics, but with further experiments these were shown to have minimal effects on control circuit function. Using these results, we have fabricated and demonstrated a low-power proof-of-concept SOS-CMOS controller circuit (monostable 100 ps voltage-pulse generator) that can operate at sub-K temperatures in a dilution refrigerator. We briefly discuss experimental and conceptual schemes with which we can develop qubit control systems for cryogenic and lower temperatures. These low temperature experiments also demonstrate that commercial SOS RF-CMOS technology can be feasible for other low temperature and low power applications.
{"title":"Quantum bit controller and observer circuits in SOS-CMOS technology for gigahertz low-temperature operation","authors":"S. Ramesh Ekanayake, T. Lehmann, A. Dzurak, R. G. Clark","doi":"10.1109/NANO.2007.4601417","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601417","url":null,"abstract":"Quantum bit (qubit) control and readout requires controller-qubit-observer systems for rapid control signal generation and injection to the qubit gates, and observation of their final state projections. Conventionally, for solid-state qubits, this is achieved by generating the control signal at 300 K and transmitting it along very long coaxial cables that span from 300 K to sub-K (typically les 500 mK), then reading out the response from charge proximity sensors such as single-electron transistors along similar lengths of cable. Our approach is to fabricate the classical controller and observer circuits using a commercial foundry processed silicon-on-sapphire (SOS) RFCMOS technology for operation at low temperatures (either at 4.2 K, 1 K, or sub-K). We have demonstrated SOS-CMOS NFET and PFET device operation at 4.2 K, and sub-K that showed deviations from their 300 K characteristics, but with further experiments these were shown to have minimal effects on control circuit function. Using these results, we have fabricated and demonstrated a low-power proof-of-concept SOS-CMOS controller circuit (monostable 100 ps voltage-pulse generator) that can operate at sub-K temperatures in a dilution refrigerator. We briefly discuss experimental and conceptual schemes with which we can develop qubit control systems for cryogenic and lower temperatures. These low temperature experiments also demonstrate that commercial SOS RF-CMOS technology can be feasible for other low temperature and low power applications.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89330063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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