Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601217
D. Litvinov, V. Parekh, E. Chunsheng, D. Smith, J. Rantschler, P. Ruchhoeft, D. Weller, S. Khizroev
Design considerations and fabrication of bit-patterned magnetic recording media are presented. The application of ion-beam proximity printing, a high-throughput direct-write lithography, to media patterning is evaluated. Ultra-high magnetic anisotropy (Co/Pd)N magnetic multilayers are analyzed as candidates for patterned recording layers. Following patterning, optimized multilayers are shown to exhibit coercivity values well in excess of 14kOe. It is found that the magnetization reversal in patterned bits takes place via domain wall nucleation and propagation. The nucleation field and the location of the nucleation site strongly depend on the bit edge imperfections and contribute to finite switching field distribution. Playback off a bit-patterned media using various magnetic reader designs is analyzed using reciprocity theory.
{"title":"Nanoscale bit-patterned media for next generation magnetic data storage applications","authors":"D. Litvinov, V. Parekh, E. Chunsheng, D. Smith, J. Rantschler, P. Ruchhoeft, D. Weller, S. Khizroev","doi":"10.1109/NANO.2007.4601217","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601217","url":null,"abstract":"Design considerations and fabrication of bit-patterned magnetic recording media are presented. The application of ion-beam proximity printing, a high-throughput direct-write lithography, to media patterning is evaluated. Ultra-high magnetic anisotropy (Co/Pd)N magnetic multilayers are analyzed as candidates for patterned recording layers. Following patterning, optimized multilayers are shown to exhibit coercivity values well in excess of 14kOe. It is found that the magnetization reversal in patterned bits takes place via domain wall nucleation and propagation. The nucleation field and the location of the nucleation site strongly depend on the bit edge imperfections and contribute to finite switching field distribution. Playback off a bit-patterned media using various magnetic reader designs is analyzed using reciprocity theory.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"31 1","pages":"395-398"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77190365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The International Roadmap for Semiconductors has forecasted a transition from conventional bulk device to siliconon-insulator (SOI) one, and then to multiple-gate SOI for high-performance devices. Impact of the discrete-dopant number and discrete-dopant position on device characteristics is crucial for nanoscale semiconductor devices. In this paper, the discrete dopant induced electrical and thermal fluctuation of 16 nm SOI FinFETs is for the first time explored. A three-dimensional "atomistic" device simulation with quantum hydrodynamic equation is proposed and performed for electrical and thermal characteristics of the discrete dopant fluctuated SOI FinFETs. Discrete dopants are statistically positioned in the 3D channel region to study associated carrier transportation characteristics, concurrently capturing "dopant concentration variation" and "dopant position fluctuation". Effect of the discrete-dopant-number- and discrete-dopant-position-induced fluctuations on device characteristic including variations of the lattice and electron temperatures are advanced. The large-scale computational statistics study provides us an insight into the fluctuation of electrical and thermal characteristics and mechanism of immunity against fluctuation in SOI FinFETs.
国际半导体路线图预测了从传统的块状器件到硅绝缘体(SOI)器件，然后到高性能器件的多栅极SOI的过渡。在纳米级半导体器件中，离散掺杂量和位置对器件特性的影响至关重要。本文首次研究了16 nm SOI finfet的离散掺杂引起的电和热波动。采用量子流体动力学方程对离散掺杂波动SOI finfet的电学和热特性进行了三维“原子”器件模拟。将离散的掺杂剂统计定位在三维通道区域，研究相关的载流子输运特性，同时捕捉“掺杂剂浓度变化”和“掺杂剂位置波动”。提出了离散掺杂数和离散掺杂位置引起的波动对器件特性的影响，包括晶格和电子温度的变化。大规模的计算统计研究使我们对SOI finfet的电特性和热特性的波动以及抗波动的机制有了深入的了解。
{"title":"Discrete dopant induced electrical and thermal fluctuation in nanoscale SOI FinFET","authors":"Yiming Li, Chih-Hong Hwang, Shao-Ming Yu, Hsuan-Ming Huang","doi":"10.1109/NANO.2007.4601390","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601390","url":null,"abstract":"The International Roadmap for Semiconductors has forecasted a transition from conventional bulk device to siliconon-insulator (SOI) one, and then to multiple-gate SOI for high-performance devices. Impact of the discrete-dopant number and discrete-dopant position on device characteristics is crucial for nanoscale semiconductor devices. In this paper, the discrete dopant induced electrical and thermal fluctuation of 16 nm SOI FinFETs is for the first time explored. A three-dimensional \"atomistic\" device simulation with quantum hydrodynamic equation is proposed and performed for electrical and thermal characteristics of the discrete dopant fluctuated SOI FinFETs. Discrete dopants are statistically positioned in the 3D channel region to study associated carrier transportation characteristics, concurrently capturing \"dopant concentration variation\" and \"dopant position fluctuation\". Effect of the discrete-dopant-number- and discrete-dopant-position-induced fluctuations on device characteristic including variations of the lattice and electron temperatures are advanced. The large-scale computational statistics study provides us an insight into the fluctuation of electrical and thermal characteristics and mechanism of immunity against fluctuation in SOI FinFETs.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"147 ","pages":"1166-1169"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91552187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601197
J. Mathieu, S. Martel
Magnetic resonance imaging (MRI) scanners can be used with minimum upgrades as integrated platforms for targeted delivery of micro/nanoparticles in the human body. In addition to being widespread in hospitals, they provide real-time tracking, control and means of propulsion for magnetic devices without penetration depth limitations. From these positive features, MRI appears as the perfect central element of a nanomedical navigation platform. Nevertheless, these assets are also coupled with constraints arising from the use of an already existing interventional platform. Potential magnetic nanoparticles-based carriers with the navigation platform are described. A simple magnetic suspension model taking magnetic dipole-dipole interactions into account is also proposed.
{"title":"MRI-based magnetic navigation of nanomedical devices for drug delivery and hyperthermia in deep tissues","authors":"J. Mathieu, S. Martel","doi":"10.1109/NANO.2007.4601197","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601197","url":null,"abstract":"Magnetic resonance imaging (MRI) scanners can be used with minimum upgrades as integrated platforms for targeted delivery of micro/nanoparticles in the human body. In addition to being widespread in hospitals, they provide real-time tracking, control and means of propulsion for magnetic devices without penetration depth limitations. From these positive features, MRI appears as the perfect central element of a nanomedical navigation platform. Nevertheless, these assets are also coupled with constraints arising from the use of an already existing interventional platform. Potential magnetic nanoparticles-based carriers with the navigation platform are described. A simple magnetic suspension model taking magnetic dipole-dipole interactions into account is also proposed.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"15 1","pages":"312-315"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82056399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601331
T. Maturos, A. Wisitsora-at, T. Lomas, A. Sappat, A. Tuantranont
We present the modification of polydimethylsiloxane (PDMS) surface by titanium dioxide (TiO2) thin film coating and subsequent oxygen plasma treatment. TiO2 thin film was deposited on the prepared PDMS samples by reactive dc sputtering. Pure Ti target was sputtered under a mixture of argon and oxygen plasma, in which the argon to oxygen flow rate ratio is 1:4. Finally, TiO2 coated PDMS structures were treated by O2 plasma at a low plasma power of 6.8 Watt with different treatment times. The micro crack of TiO2 thin film observed by optical microscope was found to be uniformly distributed on the PDMS surface. The crystal structure of TiO2 investigated by X-ray diffraction (XRD) confirms that the structure TiO2 thin film on PDMS is amorphous. To characterize the hydrophilic property, the contact angle of PDMS and TiO2 coated PDMS were measured as a function of oxygen plasma treatment time. It was found that the contact angle of treated PDMS is dropped from 117 to 9 degrees after oxygen plasma treatment for 1 minute. While the contact angle of TiO2 coated PDMS is sharply dropped from 88 to 7.8 degrees after oxygen plasma treatment for 1 minute. Therefore, the improvement of hydrophilicity surface properties of PDMS is successfully obtained by TiO2 thin film coating and subsequent oxygen plasma treatment.
{"title":"Oxygen plasma treatment of sputtered TiO2 thin film for surface modification of PDMS","authors":"T. Maturos, A. Wisitsora-at, T. Lomas, A. Sappat, A. Tuantranont","doi":"10.1109/NANO.2007.4601331","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601331","url":null,"abstract":"We present the modification of polydimethylsiloxane (PDMS) surface by titanium dioxide (TiO2) thin film coating and subsequent oxygen plasma treatment. TiO2 thin film was deposited on the prepared PDMS samples by reactive dc sputtering. Pure Ti target was sputtered under a mixture of argon and oxygen plasma, in which the argon to oxygen flow rate ratio is 1:4. Finally, TiO2 coated PDMS structures were treated by O2 plasma at a low plasma power of 6.8 Watt with different treatment times. The micro crack of TiO2 thin film observed by optical microscope was found to be uniformly distributed on the PDMS surface. The crystal structure of TiO2 investigated by X-ray diffraction (XRD) confirms that the structure TiO2 thin film on PDMS is amorphous. To characterize the hydrophilic property, the contact angle of PDMS and TiO2 coated PDMS were measured as a function of oxygen plasma treatment time. It was found that the contact angle of treated PDMS is dropped from 117 to 9 degrees after oxygen plasma treatment for 1 minute. While the contact angle of TiO2 coated PDMS is sharply dropped from 88 to 7.8 degrees after oxygen plasma treatment for 1 minute. Therefore, the improvement of hydrophilicity surface properties of PDMS is successfully obtained by TiO2 thin film coating and subsequent oxygen plasma treatment.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"26 1","pages":"911-913"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78935859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601196
O. Felfoul, P. Pouponneau, J. Mathieu, S. Martel
Magnetic resonance imaging characteristics of novel potential drug delivery agents are investigated. Candidate carriers considered in this study are iron-cobalt (Fe-Co) nanoparticles, magnetotactic bacteria (MTB), and magnetite (Fe3O4) microparticles. The micro and nanoparticles are highly magnetic and can be steered using gradient coils. MTB, on the other hand, are microorganisms that naturally follow the magnetic field lines through a mechanism called magnetotaxis. These carriers share the capability to be controlled by magnetic field and to be detected on MR images.
{"title":"MR imaging of Fe-Co nanoparticles, magnetotactic bacteria and Fe3O4 microparticles for future drug delivery applications","authors":"O. Felfoul, P. Pouponneau, J. Mathieu, S. Martel","doi":"10.1109/NANO.2007.4601196","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601196","url":null,"abstract":"Magnetic resonance imaging characteristics of novel potential drug delivery agents are investigated. Candidate carriers considered in this study are iron-cobalt (Fe-Co) nanoparticles, magnetotactic bacteria (MTB), and magnetite (Fe3O4) microparticles. The micro and nanoparticles are highly magnetic and can be steered using gradient coils. MTB, on the other hand, are microorganisms that naturally follow the magnetic field lines through a mechanism called magnetotaxis. These carriers share the capability to be controlled by magnetic field and to be detected on MR images.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"132 1","pages":"308-311"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76663680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601216
Chengfan Cao, Jaeboong Choi, Youngjin Kim, S. Baik
Single walled carbon nanotubes show pronounced sharp UV-vis-NIR absorption peak distributions while they are individually dispersed in aqueous solution phase. In this paper, we present optical absorbance detection of DNA hybridization using developed ssDNA-SWNT conjugates. Hybridization of DNA oligonucleotides with their complementary sequences makes systematic red shifts of linked nanotubes in the near infrared region. Semiconducting tubes exhibit clear responses whereas metallic species do not. The results show that SWNTs may be used to selectively detect specific kinds of DNA oligonucleotides.
{"title":"Absorption spectroscopic study of DNA hybridization using single-walled carbon nanotubes","authors":"Chengfan Cao, Jaeboong Choi, Youngjin Kim, S. Baik","doi":"10.1109/NANO.2007.4601216","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601216","url":null,"abstract":"Single walled carbon nanotubes show pronounced sharp UV-vis-NIR absorption peak distributions while they are individually dispersed in aqueous solution phase. In this paper, we present optical absorbance detection of DNA hybridization using developed ssDNA-SWNT conjugates. Hybridization of DNA oligonucleotides with their complementary sequences makes systematic red shifts of linked nanotubes in the near infrared region. Semiconducting tubes exhibit clear responses whereas metallic species do not. The results show that SWNTs may be used to selectively detect specific kinds of DNA oligonucleotides.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"158 1","pages":"391-394"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77492694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601323
Y. Suzuki, H. Fujisaka, T. Kamio, K. Haeiwa
This paper presents an architecture of digital wave filters for processing bit-stream signals with nanoelectronic devices. We use three kinds of circuit modules for the filters. One of the modules is an integer delay built of unit delay cells connected in series. The rest of the modules are two types of adders based on bit-sorting networks which are built by connecting ANDOR gate pair cells regularly and locally. Using only the three modules we construct bandpass and band-elimination digital wave filters in which the circuit cells are connected locally. This local-connection architecture helps to surmount some difficulties in applying nanoelectronic devices. We designed a building block for the filters with quantum-dot cellular automata (QCA) and simulated its filtering operation. The simulation results show that the filter responds as we theoretically estimated.
{"title":"Digital filters built of locally connected nanoelectronic devices","authors":"Y. Suzuki, H. Fujisaka, T. Kamio, K. Haeiwa","doi":"10.1109/NANO.2007.4601323","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601323","url":null,"abstract":"This paper presents an architecture of digital wave filters for processing bit-stream signals with nanoelectronic devices. We use three kinds of circuit modules for the filters. One of the modules is an integer delay built of unit delay cells connected in series. The rest of the modules are two types of adders based on bit-sorting networks which are built by connecting ANDOR gate pair cells regularly and locally. Using only the three modules we construct bandpass and band-elimination digital wave filters in which the circuit cells are connected locally. This local-connection architecture helps to surmount some difficulties in applying nanoelectronic devices. We designed a building block for the filters with quantum-dot cellular automata (QCA) and simulated its filtering operation. The simulation results show that the filter responds as we theoretically estimated.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"217 1","pages":"873-878"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76774330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601286
S. Safiruddin, S. Cotofana
This paper presents a set of basic building blocks that corresponds to a universal set of primitives for delay insensitive circuits. We propose single electron tunneling circuit topologies and verify them by means of simulations. The simulations performed with SIMON 2.0 indicate that the circuits function as expected. Moreover the proposed circuits are input-output level compatible thus they can be potentially utilized in the implementation of larger asynchronous circuits.
{"title":"Building blocks for delay-insensitive circuits using single electron tunneling devices","authors":"S. Safiruddin, S. Cotofana","doi":"10.1109/NANO.2007.4601286","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601286","url":null,"abstract":"This paper presents a set of basic building blocks that corresponds to a universal set of primitives for delay insensitive circuits. We propose single electron tunneling circuit topologies and verify them by means of simulations. The simulations performed with SIMON 2.0 indicate that the circuits function as expected. Moreover the proposed circuits are input-output level compatible thus they can be potentially utilized in the implementation of larger asynchronous circuits.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"1 1","pages":"704-708"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75130853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601354
S. Jang, K. Hwang, Ji-Hwan Lee, Jun Ho Kim, B. Lee, S.U.S. Choi
We experimentally investigated effective thermal conductivities and viscosities of water-based nanofluids containing Al2O3 (Al2O3-nanofluids) with low concentration from vol. 0.01% to 0.3%. Without surfactant, Al2O3-nanofluids are manufactured by two-step method which is widely used. To examine suspension and dispersion characteristics of Al2O3-nanofluids, zeta potential as well as transmission electron micrograph of Al2O3 nanoparticles is observed. The effective viscosities of Al2O3-nanofluids according to the temperature are measured by a viscometer of oscillating type. The transient hot wire method is used in this study to measure the effective thermal conductivities of Al2O3-nanofluids. Based on the results the maximum increase of effective viscosities of Al2O3-nanofluids is up to 2.9% while the maximum enhancement of effective thermal conductivities is up to 1.44%.
{"title":"Effective thermal conductivities and viscosities of water-based nanofluids containing Al2O3 with low concentration","authors":"S. Jang, K. Hwang, Ji-Hwan Lee, Jun Ho Kim, B. Lee, S.U.S. Choi","doi":"10.1109/NANO.2007.4601354","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601354","url":null,"abstract":"We experimentally investigated effective thermal conductivities and viscosities of water-based nanofluids containing Al<sub>2</sub>O<sub>3</sub> (Al<sub>2</sub>O<sub>3</sub>-nanofluids) with low concentration from vol. 0.01% to 0.3%. Without surfactant, Al<sub>2</sub>O<sub>3</sub>-nanofluids are manufactured by two-step method which is widely used. To examine suspension and dispersion characteristics of Al<sub>2</sub>O<sub>3</sub>-nanofluids, zeta potential as well as transmission electron micrograph of Al<sub>2</sub>O<sub>3</sub> nanoparticles is observed. The effective viscosities of Al<sub>2</sub>O<sub>3</sub>-nanofluids according to the temperature are measured by a viscometer of oscillating type. The transient hot wire method is used in this study to measure the effective thermal conductivities of Al<sub>2</sub>O<sub>3</sub>-nanofluids. Based on the results the maximum increase of effective viscosities of Al<sub>2</sub>O<sub>3</sub>-nanofluids is up to 2.9% while the maximum enhancement of effective thermal conductivities is up to 1.44%.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"32 1","pages":"1011-1014"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76344940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601155
Guoping Cui, Haigang Yang, S. Xia
This paper presents a new CMOS peak detector that directly converts the peak of a sine wave signal to its digital representation. This peak detector is capable of capturing peak points that carry the information of the electrostatic field, simplifying the sample-and-hold requirement. By making use of the voltage to time conversion (or voltage to duty cycle conversion), the method boasts the advantage of high resolution compared with the conventional way of using AD converters. The circuit is fabricated in Chartered 0.35 um technology and is further tested.
{"title":"CMOS digitalized peak detector for a MEMS-based electrostatic field sensor","authors":"Guoping Cui, Haigang Yang, S. Xia","doi":"10.1109/NANO.2007.4601155","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601155","url":null,"abstract":"This paper presents a new CMOS peak detector that directly converts the peak of a sine wave signal to its digital representation. This peak detector is capable of capturing peak points that carry the information of the electrostatic field, simplifying the sample-and-hold requirement. By making use of the voltage to time conversion (or voltage to duty cycle conversion), the method boasts the advantage of high resolution compared with the conventional way of using AD converters. The circuit is fabricated in Chartered 0.35 um technology and is further tested.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"75 1","pages":"131-134"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76560493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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