Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601291
A. Nain, A. Gupta, C. Amon, M. Sitti
We present a method for dry spinning polymeric nano/microfiber arrays. In this technique polymer solution is continuously ejected from a stationary glass micropipette and the fibers are deposited as continuous arrays in parallel and complex geometrical configurations on a rotating substrate mounted on to a translation stage. As the polymer solution exits the glass micropipette, ambient air is used to evaporate the solvent, thus solidifying the fiber which is then deposited on the rotating substrate. For a given polymer, altering the processing and material parameters allows depositing fiber arrays with highly tunable porosities and uniform fiber diameters. The fiber array porosity is observed to decrease with increasing angular velocity of the rotating substrate at a constant translational stage velocity. Fiber array breaking strength experiments as a function of porosity show higher loads required to break low porosity arrays, which is critical in designing stronger materials. Additionally, single and double layered biological scaffolds fabricated using this technique are seeded with mouse C2C12 cells and cellular dynamics of adhesion, migration and proliferation is investigated.
{"title":"Dry spinning polymeric nano/microfiber arrays using glass micropipettes with controlled porosities and fiber diameters","authors":"A. Nain, A. Gupta, C. Amon, M. Sitti","doi":"10.1109/NANO.2007.4601291","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601291","url":null,"abstract":"We present a method for dry spinning polymeric nano/microfiber arrays. In this technique polymer solution is continuously ejected from a stationary glass micropipette and the fibers are deposited as continuous arrays in parallel and complex geometrical configurations on a rotating substrate mounted on to a translation stage. As the polymer solution exits the glass micropipette, ambient air is used to evaporate the solvent, thus solidifying the fiber which is then deposited on the rotating substrate. For a given polymer, altering the processing and material parameters allows depositing fiber arrays with highly tunable porosities and uniform fiber diameters. The fiber array porosity is observed to decrease with increasing angular velocity of the rotating substrate at a constant translational stage velocity. Fiber array breaking strength experiments as a function of porosity show higher loads required to break low porosity arrays, which is critical in designing stronger materials. Additionally, single and double layered biological scaffolds fabricated using this technique are seeded with mouse C2C12 cells and cellular dynamics of adhesion, migration and proliferation is investigated.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"2015 1","pages":"728-732"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87055889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601423
P. Kuo, C. Lin, C. Peng, Y.-C. Fu, C. Liu
The blockage of the hole transport due to the excess hole in SiGe quantum dots was observed in the metal-oxide-semiconductor (MOS) tunneling diodes for the first time. The hole tunneling current from Pt gate electrode to p-type Si dominates the inversion current at the positive gate bias and is seven order of magnitude higher than the Al gate/oxide/p-Si device. The SiGe quantum dots confine the excess holes in the valence band, and form the repulsive barrier to reduce the hole transport current from Pt to SiGe quantum dots by three order of magnitude as compared to the Pt/oxide/p-Si device. This repulsive barrier also reduces the hole tunneling current from SiGe quantum dots to Pt for the accumulation current at positive gate bias.
{"title":"Novel transport mechanism of SiGe dot MOS tunneling diodes","authors":"P. Kuo, C. Lin, C. Peng, Y.-C. Fu, C. Liu","doi":"10.1109/NANO.2007.4601423","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601423","url":null,"abstract":"The blockage of the hole transport due to the excess hole in SiGe quantum dots was observed in the metal-oxide-semiconductor (MOS) tunneling diodes for the first time. The hole tunneling current from Pt gate electrode to p-type Si dominates the inversion current at the positive gate bias and is seven order of magnitude higher than the Al gate/oxide/p-Si device. The SiGe quantum dots confine the excess holes in the valence band, and form the repulsive barrier to reduce the hole transport current from Pt to SiGe quantum dots by three order of magnitude as compared to the Pt/oxide/p-Si device. This repulsive barrier also reduces the hole tunneling current from SiGe quantum dots to Pt for the accumulation current at positive gate bias.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"158 1","pages":"1309-1312"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87873347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601279
Sun-Rong Jan, T.-H. Cheng, M. Liao, T. Hung, Y. Deng, C. Liu
Pt/oxide/n-6H-SiC tunneling diode has been fabricated using liquid phase deposited oxide as the tunneling oxide. At the negative bias, the electrons can be injected from the Pt gate to n-SiC, and recombine radiatively with the trapped holes in the defects near the oxide/SiC interface. The electroluminescence at room temperature from the SiC MOS tunneling diodes is observed for the first time. The light intensity decrease with the decreasing temperature. At the positive bias, the electron tunneling current from SiC to Pt gate is dominant, and the radiative recombination in SiC is not observed.
{"title":"Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes","authors":"Sun-Rong Jan, T.-H. Cheng, M. Liao, T. Hung, Y. Deng, C. Liu","doi":"10.1109/NANO.2007.4601279","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601279","url":null,"abstract":"Pt/oxide/n-6H-SiC tunneling diode has been fabricated using liquid phase deposited oxide as the tunneling oxide. At the negative bias, the electrons can be injected from the Pt gate to n-SiC, and recombine radiatively with the trapped holes in the defects near the oxide/SiC interface. The electroluminescence at room temperature from the SiC MOS tunneling diodes is observed for the first time. The light intensity decrease with the decreasing temperature. At the positive bias, the electron tunneling current from SiC to Pt gate is dominant, and the radiative recombination in SiC is not observed.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"9 1","pages":"674-677"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85135950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601404
K. Garre, M. Cahay, P. Kosel, J. Fraser, D. J. Lockwood, V. Semet, V. Binh, B. Kanchibhotla, Supriyo Bandyopadhyay, B. Das
Several nanoscale arrays of metallic, semiconductor, and organic carbon compounds (carbon nanopearls) have been fabricated on nanoporous flexible alumina and silicon templates based on a new self-assembly growth mode. They were obtained using pulsed laser deposition, thermal evaporation, e-beam evaporation, or RF magnetron sputtering. The different moieties that were observed include nanodomes and nanodots (gold, nickel, cobalt, and aluminum nitride), nanonecklaces (carbon nanopearl), and nanopinetrees (gold) self assembled on flexible alumina templates. A nanoneedle array was also self assembled by e-beam evaporation of nickel on silicon substrates that were rendered nanoporous by the use of a porous alumina mask. The physical processes underpinning the new self assembly growth mode have been studied based on extensive characterization of the templates prior to and after deposition of the various metallic, semiconductor, and organic compounds. These include atomic force microscopy (AFM), X-ray diffraction (XRD) analysis, Raman spectroscopy and field emission-scanning electron microscopy (FE-SEM). Some of the arrays have been tested as potential candidates for new cold cathode arrays for vacuum electronic applications using the scanning electron field emission microscopy (SAFEM) technique.
{"title":"Self-assembled growth on flexible alumina and nanoporous silicon templates","authors":"K. Garre, M. Cahay, P. Kosel, J. Fraser, D. J. Lockwood, V. Semet, V. Binh, B. Kanchibhotla, Supriyo Bandyopadhyay, B. Das","doi":"10.1109/NANO.2007.4601404","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601404","url":null,"abstract":"Several nanoscale arrays of metallic, semiconductor, and organic carbon compounds (carbon nanopearls) have been fabricated on nanoporous flexible alumina and silicon templates based on a new self-assembly growth mode. They were obtained using pulsed laser deposition, thermal evaporation, e-beam evaporation, or RF magnetron sputtering. The different moieties that were observed include nanodomes and nanodots (gold, nickel, cobalt, and aluminum nitride), nanonecklaces (carbon nanopearl), and nanopinetrees (gold) self assembled on flexible alumina templates. A nanoneedle array was also self assembled by e-beam evaporation of nickel on silicon substrates that were rendered nanoporous by the use of a porous alumina mask. The physical processes underpinning the new self assembly growth mode have been studied based on extensive characterization of the templates prior to and after deposition of the various metallic, semiconductor, and organic compounds. These include atomic force microscopy (AFM), X-ray diffraction (XRD) analysis, Raman spectroscopy and field emission-scanning electron microscopy (FE-SEM). Some of the arrays have been tested as potential candidates for new cold cathode arrays for vacuum electronic applications using the scanning electron field emission microscopy (SAFEM) technique.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"74 1","pages":"1227-1230"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83747439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601222
B. Tierney, S. Goodnick
An ensemble Monte Carlo program, in conjunction with an 8-band k.p self-consistent solver, is used to simulate the temporal and spatial evolution of the spin polarization of current through a GaAs/AlGaAs heterostructure with a source and drain defined as quantum point contacts that spin-polarize the current. Results relate the effect of an applied gate voltage on both the Dresselhaus and Rashba contributions of the D'yakanov-Perel spin-flip scattering mechanism, the predominant spin scattering mechanism in AlGaAs/GaAs heterostructures at 300 K. Results are presented on the simulation of a spin-FET structure using quantum point contacts (QPCs) as a spin polarizer and spin detector.
{"title":"Monte Carlo simulation of spin-polarized transport in GaAs nanostructures","authors":"B. Tierney, S. Goodnick","doi":"10.1109/NANO.2007.4601222","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601222","url":null,"abstract":"An ensemble Monte Carlo program, in conjunction with an 8-band k.p self-consistent solver, is used to simulate the temporal and spatial evolution of the spin polarization of current through a GaAs/AlGaAs heterostructure with a source and drain defined as quantum point contacts that spin-polarize the current. Results relate the effect of an applied gate voltage on both the Dresselhaus and Rashba contributions of the D'yakanov-Perel spin-flip scattering mechanism, the predominant spin scattering mechanism in AlGaAs/GaAs heterostructures at 300 K. Results are presented on the simulation of a spin-FET structure using quantum point contacts (QPCs) as a spin polarizer and spin detector.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"19 1","pages":"414-417"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89546780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601410
Chi-Yuan Lee, Shuo-Jen Lee, Ren-De Huang, C. Chuang
This work employs porous silicon as a gas diffusion layer (GDL) in a micro proton exchange membrane fuel cell (muPEMFC) and a micro direct methanol fuel cell (muDMFC). Pt catalyst is deposited on the surface of, and inside, the porous silicon to improve its conductivity. Porous silicon with Pt catalyst replaces traditional GDL, and the Pt metal that remains on the rib is used to form a micro thermal sensor in a single lithographic process. The GDL was replaced by porous silicon and used in a muPEMFC and muDMFC. Wet etching is applied to a 500 mum-thick layer of silicon to yield fuel channels with a depth of 450 mum and a width of 200 mum. The pores in the fabricated structure had a diameter of 10 mum; the thickness of the structure was 50 mum. Therefore, the GDLs of the fuel cell were fabricated using macro-porous silicon technology. Porous silicon was fabricated by photoelectrochemical porous silicon etching. The top-side of the fuel channel was exposed to light from a halogen lamp. The porous structure was fabricated at the bottom of the fuel channel and patterned by anodization; and the micro thermal sensors were integrated on the rib. The experimental results demonstrated that the maximums power density of muDMFC and muPEMFC were 1.784 mW/cm2 and 9.37 mW/cm2. 30SCCM and 2 M methanol were used with 10 mum holes, various humidities and heating temperatures.
{"title":"Integration of the micro thermal sensor and porous silicon as the gas diffusion layer for micro fuel cell","authors":"Chi-Yuan Lee, Shuo-Jen Lee, Ren-De Huang, C. Chuang","doi":"10.1109/NANO.2007.4601410","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601410","url":null,"abstract":"This work employs porous silicon as a gas diffusion layer (GDL) in a micro proton exchange membrane fuel cell (muPEMFC) and a micro direct methanol fuel cell (muDMFC). Pt catalyst is deposited on the surface of, and inside, the porous silicon to improve its conductivity. Porous silicon with Pt catalyst replaces traditional GDL, and the Pt metal that remains on the rib is used to form a micro thermal sensor in a single lithographic process. The GDL was replaced by porous silicon and used in a muPEMFC and muDMFC. Wet etching is applied to a 500 mum-thick layer of silicon to yield fuel channels with a depth of 450 mum and a width of 200 mum. The pores in the fabricated structure had a diameter of 10 mum; the thickness of the structure was 50 mum. Therefore, the GDLs of the fuel cell were fabricated using macro-porous silicon technology. Porous silicon was fabricated by photoelectrochemical porous silicon etching. The top-side of the fuel channel was exposed to light from a halogen lamp. The porous structure was fabricated at the bottom of the fuel channel and patterned by anodization; and the micro thermal sensors were integrated on the rib. The experimental results demonstrated that the maximums power density of muDMFC and muPEMFC were 1.784 mW/cm2 and 9.37 mW/cm2. 30SCCM and 2 M methanol were used with 10 mum holes, various humidities and heating temperatures.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"11 1","pages":"1252-1255"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90464449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601289
I. Mircea, S. Fatikow, A. Sill
Microrobot-based nanoindentation is a relatively new testing technique, which uses microrobot based methods for performing nanoindentation experiments. The use of the microrobot-based nanoindentation is a example how microrobotic technology can help the materials research. In this work, the hardness of an epoxy-based silver-filled electrically conductive adhesive (ECA) type PC 3002 has been determined using this method. Flat ECA specimens have been investigated after a first curing at 70degC for 120 minutes, respectively after a curing time of 150 minutes, 180 minutes, 240 minutes, 300 minutes, and finally after 325 minutes at the same temperature. The maximum indentation depth was 1 mum. The hardness of the ECA has shown an increase with the increase of the curing time at constant temperature. The set-up uses a Berkovich diamond tip for performing nanoindentation tests. The set-up requires calibrations with reference specimens (fused silica and sapphire) for calculating hardness and Young's modulus of the tested material. Preliminary results are very promising: by comparing the slope of the loading stage of the nanoindentation tests on different specimens, the difference in hardness can be qualitatively evidenced.
{"title":"Microrobot-based nanoindentation of an epoxy-based electrically conductive adhesive","authors":"I. Mircea, S. Fatikow, A. Sill","doi":"10.1109/NANO.2007.4601289","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601289","url":null,"abstract":"Microrobot-based nanoindentation is a relatively new testing technique, which uses microrobot based methods for performing nanoindentation experiments. The use of the microrobot-based nanoindentation is a example how microrobotic technology can help the materials research. In this work, the hardness of an epoxy-based silver-filled electrically conductive adhesive (ECA) type PC 3002 has been determined using this method. Flat ECA specimens have been investigated after a first curing at 70degC for 120 minutes, respectively after a curing time of 150 minutes, 180 minutes, 240 minutes, 300 minutes, and finally after 325 minutes at the same temperature. The maximum indentation depth was 1 mum. The hardness of the ECA has shown an increase with the increase of the curing time at constant temperature. The set-up uses a Berkovich diamond tip for performing nanoindentation tests. The set-up requires calibrations with reference specimens (fused silica and sapphire) for calculating hardness and Young's modulus of the tested material. Preliminary results are very promising: by comparing the slope of the loading stage of the nanoindentation tests on different specimens, the difference in hardness can be qualitatively evidenced.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"23 1","pages":"719-722"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75857030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601149
Lianqing Liu, N. Xi, Yilun Luo, Jiangbo Zhang, Guangyong Li
The main roadblock to atomic force microscope (AFM) based nanomanipulation is lack of real time visual feedback. Although the model based visual feedback can partly solve this problem, due to the complication of nano environment, it is difficult to accurately describe the behavior of nano-objects with a model. The modeling error will lead to an inaccurate feedback and a failed manipulation. In this paper, a Kalman filter is developed to real time detect this modeling error. During manipulation, the residual between the estimated behavior and the visual display behavior is real time updated. The residual's Mahalanobis distance is calculated and compared with an threshold to determine whether there is a position error. Once the threshold is exceeded, an alarm signal will be triggered to tell the system there is a position error. Furthermore, the position error can be on-line corrected by local scan method. With the assistance of Kalman filter and local scan, the position error not only can be real-time detected, but also can be online corrected. The visual display keeps matching with the real manipulation result during the whole manipulation process, which significantly improve the efficiency of the AFM based nano-assembly. Experiments of manipulating nano-particles are presented to verify the effectiveness of Kalman filter and local scan method.
{"title":"Real-time position error detecting in nanomanipulation using Kalman filter","authors":"Lianqing Liu, N. Xi, Yilun Luo, Jiangbo Zhang, Guangyong Li","doi":"10.1109/NANO.2007.4601149","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601149","url":null,"abstract":"The main roadblock to atomic force microscope (AFM) based nanomanipulation is lack of real time visual feedback. Although the model based visual feedback can partly solve this problem, due to the complication of nano environment, it is difficult to accurately describe the behavior of nano-objects with a model. The modeling error will lead to an inaccurate feedback and a failed manipulation. In this paper, a Kalman filter is developed to real time detect this modeling error. During manipulation, the residual between the estimated behavior and the visual display behavior is real time updated. The residual's Mahalanobis distance is calculated and compared with an threshold to determine whether there is a position error. Once the threshold is exceeded, an alarm signal will be triggered to tell the system there is a position error. Furthermore, the position error can be on-line corrected by local scan method. With the assistance of Kalman filter and local scan, the position error not only can be real-time detected, but also can be online corrected. The visual display keeps matching with the real manipulation result during the whole manipulation process, which significantly improve the efficiency of the AFM based nano-assembly. Experiments of manipulating nano-particles are presented to verify the effectiveness of Kalman filter and local scan method.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"1 1","pages":"100-105"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88563233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601180
Jun Zhang, A. Osgood, Y. Shirai, Jean‐François Morin, T. Sasaki, J. Tour, K. Kelly
To build up true molecular machines and understand the mechanics of nanoscale motion and manipulation in molecular system, we have created and investigated a family of molecules based around the concept of the nanocar, which has the rolling wheels made of spherical fullerene or carborane molecules. Assisted by scanning tunneling microscopy (STM), we have successfully characterized and manipulated these molecules. In addition, we have observed the behavior of these systems when thermal energy is applied. These initial studies open a new realm of nano-sized mechanical, chemical, and electrical devices.
{"title":"Investigating the motion of molecular machines on surfaces by STM: The nanocar and beyond","authors":"Jun Zhang, A. Osgood, Y. Shirai, Jean‐François Morin, T. Sasaki, J. Tour, K. Kelly","doi":"10.1109/NANO.2007.4601180","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601180","url":null,"abstract":"To build up true molecular machines and understand the mechanics of nanoscale motion and manipulation in molecular system, we have created and investigated a family of molecules based around the concept of the nanocar, which has the rolling wheels made of spherical fullerene or carborane molecules. Assisted by scanning tunneling microscopy (STM), we have successfully characterized and manipulated these molecules. In addition, we have observed the behavior of these systems when thermal energy is applied. These initial studies open a new realm of nano-sized mechanical, chemical, and electrical devices.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"1 1","pages":"243-246"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89710828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The International Roadmap for Semiconductors has forecasted a transition from conventional bulk device to siliconon-insulator (SOI) one, and then to multiple-gate SOI for high-performance devices. Impact of the discrete-dopant number and discrete-dopant position on device characteristics is crucial for nanoscale semiconductor devices. In this paper, the discrete dopant induced electrical and thermal fluctuation of 16 nm SOI FinFETs is for the first time explored. A three-dimensional "atomistic" device simulation with quantum hydrodynamic equation is proposed and performed for electrical and thermal characteristics of the discrete dopant fluctuated SOI FinFETs. Discrete dopants are statistically positioned in the 3D channel region to study associated carrier transportation characteristics, concurrently capturing "dopant concentration variation" and "dopant position fluctuation". Effect of the discrete-dopant-number- and discrete-dopant-position-induced fluctuations on device characteristic including variations of the lattice and electron temperatures are advanced. The large-scale computational statistics study provides us an insight into the fluctuation of electrical and thermal characteristics and mechanism of immunity against fluctuation in SOI FinFETs.
国际半导体路线图预测了从传统的块状器件到硅绝缘体(SOI)器件，然后到高性能器件的多栅极SOI的过渡。在纳米级半导体器件中，离散掺杂量和位置对器件特性的影响至关重要。本文首次研究了16 nm SOI finfet的离散掺杂引起的电和热波动。采用量子流体动力学方程对离散掺杂波动SOI finfet的电学和热特性进行了三维“原子”器件模拟。将离散的掺杂剂统计定位在三维通道区域，研究相关的载流子输运特性，同时捕捉“掺杂剂浓度变化”和“掺杂剂位置波动”。提出了离散掺杂数和离散掺杂位置引起的波动对器件特性的影响，包括晶格和电子温度的变化。大规模的计算统计研究使我们对SOI finfet的电特性和热特性的波动以及抗波动的机制有了深入的了解。
{"title":"Discrete dopant induced electrical and thermal fluctuation in nanoscale SOI FinFET","authors":"Yiming Li, Chih-Hong Hwang, Shao-Ming Yu, Hsuan-Ming Huang","doi":"10.1109/NANO.2007.4601390","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601390","url":null,"abstract":"The International Roadmap for Semiconductors has forecasted a transition from conventional bulk device to siliconon-insulator (SOI) one, and then to multiple-gate SOI for high-performance devices. Impact of the discrete-dopant number and discrete-dopant position on device characteristics is crucial for nanoscale semiconductor devices. In this paper, the discrete dopant induced electrical and thermal fluctuation of 16 nm SOI FinFETs is for the first time explored. A three-dimensional \"atomistic\" device simulation with quantum hydrodynamic equation is proposed and performed for electrical and thermal characteristics of the discrete dopant fluctuated SOI FinFETs. Discrete dopants are statistically positioned in the 3D channel region to study associated carrier transportation characteristics, concurrently capturing \"dopant concentration variation\" and \"dopant position fluctuation\". Effect of the discrete-dopant-number- and discrete-dopant-position-induced fluctuations on device characteristic including variations of the lattice and electron temperatures are advanced. The large-scale computational statistics study provides us an insight into the fluctuation of electrical and thermal characteristics and mechanism of immunity against fluctuation in SOI FinFETs.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"147 ","pages":"1166-1169"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91552187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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