Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601372
P. Phumman, A. Sirivat
Poly(p-phenylene) (PPP) was chemically synthesized via the oxidative polymerization of benzene and doped with FeCl3. Electrical conductivity response of doped PPP (dPPP) towards CO, H2 and NH3 was investigated. dPPP shows no response towards CO and H2, but it shows a definite negative response to NH3. The electrical conductivity sensitivity of dPPP increases with increasing NH3 concentration. In order to improve sensitivity of the sensor, ZSM-5 zeolite is added into the conductive polymer matrix. The sensitivity of the sensor increases with increasing zeolite content up to 30%. Moreover, the effect of cation type residing in the zeolite pore is investigated: including Na+, K+, NH4+ and H+. The electrical conductivity sensitivity of the composites with different cations in the zeolite can be arranged in this order; 50:1 dPPP(90)/KZ23 <50:1 dPPP<50:1 dPPP(90)/NaZ23<50:1 dPPP(90)/NH4Z23<50:1 dPPP(90)/HZ23. The variation in sensitivity with cation type can be described in term of the acid-base interaction. The 50:1 dPPP(90)/HZ23 possesses the highest sensitivity of -0.36 since H+ has the highest acidity which induces more favorable NH3 adsorption and interaction with the conductive polymer.
{"title":"Electrical conductivity response of poly(p-phenylene)/ZSM-5 composite","authors":"P. Phumman, A. Sirivat","doi":"10.1109/NANO.2007.4601372","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601372","url":null,"abstract":"Poly(p-phenylene) (PPP) was chemically synthesized via the oxidative polymerization of benzene and doped with FeCl<sub>3</sub>. Electrical conductivity response of doped PPP (dPPP) towards CO, H<sub>2</sub> and NH<sub>3</sub> was investigated. dPPP shows no response towards CO and H<sub>2</sub>, but it shows a definite negative response to NH<sub>3</sub>. The electrical conductivity sensitivity of dPPP increases with increasing NH<sub>3</sub> concentration. In order to improve sensitivity of the sensor, ZSM-5 zeolite is added into the conductive polymer matrix. The sensitivity of the sensor increases with increasing zeolite content up to 30%. Moreover, the effect of cation type residing in the zeolite pore is investigated: including Na<sup>+</sup>, K<sup>+</sup>, NH<sub>4</sub> <sup>+</sup> and H<sup>+</sup>. The electrical conductivity sensitivity of the composites with different cations in the zeolite can be arranged in this order; 50:1 dPPP(90)/KZ23 <50:1 dPPP<50:1 dPPP(90)/NaZ23<50:1 dPPP(90)/NH<sub>4</sub>Z23<50:1 dPPP(90)/HZ23. The variation in sensitivity with cation type can be described in term of the acid-base interaction. The 50:1 dPPP(90)/HZ23 possesses the highest sensitivity of -0.36 since H<sup>+</sup> has the highest acidity which induces more favorable NH<sub>3</sub> adsorption and interaction with the conductive polymer.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"67 1","pages":"1085-1088"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76211355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601151
F. Wei, B. Zimmermann, Na Li, Chih-Ming Ho, D. Wong
Electrochemical biosensor for salivary RNA detection with high sensitivity is presented. The complexity of saliva and the low concentration of salivary RNA require both high sensitivity and specificity. In this study enzyme amplification is applied to achieve high signal intensity. In order to increase the current signal, effective hybridization and electron transfer are both required. Electrochemical studies on the location of anchor label and report label have been carried out. Results indicate the hybridization efficiency and the surface hindrance to enzyme amplification are the two major factors contributed to the detected current signal. Human salivary IL-8 RNA has been detected. For oligonucleotide target, the limitation of detection (LOD) is about 1 fM, while the LOD for IVT RNA is about 50 pM.
{"title":"Electrochemical detection of salivary RNA","authors":"F. Wei, B. Zimmermann, Na Li, Chih-Ming Ho, D. Wong","doi":"10.1109/NANO.2007.4601151","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601151","url":null,"abstract":"Electrochemical biosensor for salivary RNA detection with high sensitivity is presented. The complexity of saliva and the low concentration of salivary RNA require both high sensitivity and specificity. In this study enzyme amplification is applied to achieve high signal intensity. In order to increase the current signal, effective hybridization and electron transfer are both required. Electrochemical studies on the location of anchor label and report label have been carried out. Results indicate the hybridization efficiency and the surface hindrance to enzyme amplification are the two major factors contributed to the detected current signal. Human salivary IL-8 RNA has been detected. For oligonucleotide target, the limitation of detection (LOD) is about 1 fM, while the LOD for IVT RNA is about 50 pM.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"20 1 1","pages":"112-115"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86686929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601405
O. Sardan, A.B. Erdem, A. Yalçinkaya, P. Bøggild, T.P. Torben, O. Hansen
Fabrication of integrated micro and nanoscale components in a single batch is one of the biggest challenges for nanosystems development. A self-assembly technique that enables "batch-compatible" integration of micro electro mechanical systems with nanoribbons is presented by demonstrating electrostatically actuated comb drive microgrippers with nanoribbon end-effectors. Preliminary fabrication results demonstrate the possibility of obtaining well defined spatial density and orientation of nanoribbons matching the precision of top-down techniques and at the same time allowing complete alignment and registry with subsequent lithography steps.
{"title":"Route to batch-compatible fabrication of nanotweezers by guided self-assembly","authors":"O. Sardan, A.B. Erdem, A. Yalçinkaya, P. Bøggild, T.P. Torben, O. Hansen","doi":"10.1109/NANO.2007.4601405","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601405","url":null,"abstract":"Fabrication of integrated micro and nanoscale components in a single batch is one of the biggest challenges for nanosystems development. A self-assembly technique that enables \"batch-compatible\" integration of micro electro mechanical systems with nanoribbons is presented by demonstrating electrostatically actuated comb drive microgrippers with nanoribbon end-effectors. Preliminary fabrication results demonstrate the possibility of obtaining well defined spatial density and orientation of nanoribbons matching the precision of top-down techniques and at the same time allowing complete alignment and registry with subsequent lithography steps.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"15 1","pages":"1231-1234"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89110490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601328
Y. Huang, T. Chao, Y. Cheng
This paper presents a Cu-Ni nanocomposite film and related CMOS compatible fabrication process using alkaline noncyanide based copper plating solution for low power magnetic microactuation application. The magnetic properties of Cu can be modified from diamagnetism to ferromagnetism via the incorporation of Ni nanoparticles into a Cu matrix to form a Cu-Ni nanocomposite film. Experimental results show that about 9% power consumption reduction of magnetic microactuation could be realized while the actuated coil is made of the Cu-Ni nanocomposite instead of pure Cu. The effective power reduction can be attributed to the magnetic flux density intensification inside the coil.
{"title":"Synthesis and device fabrication of Cu-Ni nanocomposite for low power magnetic microactuation","authors":"Y. Huang, T. Chao, Y. Cheng","doi":"10.1109/NANO.2007.4601328","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601328","url":null,"abstract":"This paper presents a Cu-Ni nanocomposite film and related CMOS compatible fabrication process using alkaline noncyanide based copper plating solution for low power magnetic microactuation application. The magnetic properties of Cu can be modified from diamagnetism to ferromagnetism via the incorporation of Ni nanoparticles into a Cu matrix to form a Cu-Ni nanocomposite film. Experimental results show that about 9% power consumption reduction of magnetic microactuation could be realized while the actuated coil is made of the Cu-Ni nanocomposite instead of pure Cu. The effective power reduction can be attributed to the magnetic flux density intensification inside the coil.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"54 1","pages":"899-902"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81056452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601299
G. Han, Z. Jiang, W. Jing, M.Z. Zhu
One-dimensional nano CD (NCD) linewidth standard product lines are prepared using multilayer thin films deposition technique. The Ti/SiO2 multilayer thin films are systematically deposited on silicon substrates in the conventional electron-beam evaporation system. Then a single nanometer scale line can be obtained on the cleaved cross-section of one multilayer thin films structure. The linewidth and line edge roughness (LER) have been evaluated by analyzing top-down scanning electron microscope (SEM) images off-line using image processing techniques. The average linewidth is less than 25 nm and LER is estimated.
{"title":"Measurement of linewidth and line edge roughness for 1D nano CD linewidth standard product lines","authors":"G. Han, Z. Jiang, W. Jing, M.Z. Zhu","doi":"10.1109/NANO.2007.4601299","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601299","url":null,"abstract":"One-dimensional nano CD (NCD) linewidth standard product lines are prepared using multilayer thin films deposition technique. The Ti/SiO2 multilayer thin films are systematically deposited on silicon substrates in the conventional electron-beam evaporation system. Then a single nanometer scale line can be obtained on the cleaved cross-section of one multilayer thin films structure. The linewidth and line edge roughness (LER) have been evaluated by analyzing top-down scanning electron microscope (SEM) images off-line using image processing techniques. The average linewidth is less than 25 nm and LER is estimated.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"2 1","pages":"769-772"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88803716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601165
Y.F. Li, T. Kaneko, R. Hatakeyama
We report electrical transport properties of resonance tunneling transistors fabricated using C60-filled metallic double-walled carbon nanotubes. All the examined devices exhibit a strong negative differential resistance (NDR) behavior, and the high peak-to-valley current ratios more than 103 are observed at room temperature. More importantly, the observed NDR characteristics remain stable under forward and backward measurements. In addition, it is found that the applied gate voltages exercise a great influence on the peak voltage of NDR.
{"title":"Resonance tunneling transistors based on C60 encapsulated double-walled carbon nanotubes","authors":"Y.F. Li, T. Kaneko, R. Hatakeyama","doi":"10.1109/NANO.2007.4601165","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601165","url":null,"abstract":"We report electrical transport properties of resonance tunneling transistors fabricated using C60-filled metallic double-walled carbon nanotubes. All the examined devices exhibit a strong negative differential resistance (NDR) behavior, and the high peak-to-valley current ratios more than 103 are observed at room temperature. More importantly, the observed NDR characteristics remain stable under forward and backward measurements. In addition, it is found that the applied gate voltages exercise a great influence on the peak voltage of NDR.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"40 1","pages":"175-179"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84798445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601134
H. Chu, J. Mills, W. Cleghorn
This paper presents the design and development of a MEMS based, capacitive sensor for micro-force measurement. The sensor has an overall dimension of 3600 mum times 1000 mum times 10 mum and was fabricated using the Micragem fabrication process. A displacement reduction mechanism is incorporated in this sensor design to increase the sensitivity of the sensor. Analysis from Finite Element software, COMSOL, confirms that a 10:1 displacement reduction ratio is achievable with this mechanism. Simulation results show that the sensor is capable of measuring a maximum force input of 11 milli-Newton, resulting from a 20-mum displacement on the sensing structure. A 6-DOF manipulator and an evaluation board were used to experimentally verify the performance the sensor. Experimental results show that a capacitance change of approximately 175 to 200 fF can be observed from a 20-mum displacement.
本文介绍了一种基于MEMS的电容式微力传感器的设计与开发。该传感器的整体尺寸为3600 μ m × 1000 μ m × 10 μ m，采用微热成像制造工艺制造。在该传感器设计中加入了位移减小机构，以增加传感器的灵敏度。有限元软件COMSOL的分析证实，采用这种机制可以实现10:1的减排量比。仿真结果表明，该传感器能够测量由传感器结构上20 μ m的位移产生的最大力输入为11毫牛顿。利用六自由度机械臂和评估板对传感器的性能进行了实验验证。实验结果表明，在20 μ m的位移下，电容变化约为175 ~ 200ff。
{"title":"Design of a high sensitivity capacitive force sensor","authors":"H. Chu, J. Mills, W. Cleghorn","doi":"10.1109/NANO.2007.4601134","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601134","url":null,"abstract":"This paper presents the design and development of a MEMS based, capacitive sensor for micro-force measurement. The sensor has an overall dimension of 3600 mum times 1000 mum times 10 mum and was fabricated using the Micragem fabrication process. A displacement reduction mechanism is incorporated in this sensor design to increase the sensitivity of the sensor. Analysis from Finite Element software, COMSOL, confirms that a 10:1 displacement reduction ratio is achievable with this mechanism. Simulation results show that the sensor is capable of measuring a maximum force input of 11 milli-Newton, resulting from a 20-mum displacement on the sensing structure. A 6-DOF manipulator and an evaluation board were used to experimentally verify the performance the sensor. Experimental results show that a capacitance change of approximately 175 to 200 fF can be observed from a 20-mum displacement.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"1 1","pages":"29-33"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90555661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601251
P. Bai, K. Lam, Ken Chang, E. Li
The electron transport properties of carbon nanotube (CNT) metal/semiconductor/metal heterostructures are investigated using the first principles method based on density functional theory (DFT) and non-equilibrium Green's function (NEGF). The atomic heterostructures are constructed by sandwiching a zigzag semiconducting CNT between two zigzag metallic CNTs with different diameters. The density of states, transmission function, conductance and current-voltage characteristics of the constructed heterostructures are simulated using the DFT-NEGF method. Results show that the imperfect interface in the CNT heterostructures affects the high-bias conductance significantly. The reduction of high-bias conductance is proportional to diameter ratio of two CNTs connected. The diameter of metallic CNT decides the threshold voltage and low-bias conductance of the heterostructures. The larger the diameter is, the lower the threshold voltage is and the higher low-bias conductance is.
{"title":"On transport properties of CNT metal/semiconductor/metal heterostructures using first principles methods","authors":"P. Bai, K. Lam, Ken Chang, E. Li","doi":"10.1109/NANO.2007.4601251","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601251","url":null,"abstract":"The electron transport properties of carbon nanotube (CNT) metal/semiconductor/metal heterostructures are investigated using the first principles method based on density functional theory (DFT) and non-equilibrium Green's function (NEGF). The atomic heterostructures are constructed by sandwiching a zigzag semiconducting CNT between two zigzag metallic CNTs with different diameters. The density of states, transmission function, conductance and current-voltage characteristics of the constructed heterostructures are simulated using the DFT-NEGF method. Results show that the imperfect interface in the CNT heterostructures affects the high-bias conductance significantly. The reduction of high-bias conductance is proportional to diameter ratio of two CNTs connected. The diameter of metallic CNT decides the threshold voltage and low-bias conductance of the heterostructures. The larger the diameter is, the lower the threshold voltage is and the higher low-bias conductance is.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"63 1","pages":"549-553"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90690834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601399
A. Tuantranont, W. Mamanee, T. Lomas, N. Porntheerapat, N. Afzulpurkar, A. Wisitsoraat
A three-stage thermopnuematic peristaltic micropump for controlling micro to nano litters of fluid was simply designed and fabricated from PDMS on glass slide. Pump structure consists of inlet and outlet, microchannel, three thermopneumatic actuations, and three heaters. In microchannel, fluid is controlled and pumped by peristaltic motion of actuation diaphragm. Actuation diaphragm can bend up and down by exploiting expanded air that induced by increasing heater temperature. The motion of fluid in nanoport was captured by digital camera every 5 minutes, and then the flow rate was monitored from height difference of fluid in nanoport by consecutive records. The optimum flow rate is 0.82 mul/min (=13.6 nl/sec) with applying 14 volts three-phase input driving voltage at frequency of 0.033 Hz.
{"title":"A three-stage thermopneumatic peristaltic micropump for PDMS-based micro/nanofluidic systems","authors":"A. Tuantranont, W. Mamanee, T. Lomas, N. Porntheerapat, N. Afzulpurkar, A. Wisitsoraat","doi":"10.1109/NANO.2007.4601399","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601399","url":null,"abstract":"A three-stage thermopnuematic peristaltic micropump for controlling micro to nano litters of fluid was simply designed and fabricated from PDMS on glass slide. Pump structure consists of inlet and outlet, microchannel, three thermopneumatic actuations, and three heaters. In microchannel, fluid is controlled and pumped by peristaltic motion of actuation diaphragm. Actuation diaphragm can bend up and down by exploiting expanded air that induced by increasing heater temperature. The motion of fluid in nanoport was captured by digital camera every 5 minutes, and then the flow rate was monitored from height difference of fluid in nanoport by consecutive records. The optimum flow rate is 0.82 mul/min (=13.6 nl/sec) with applying 14 volts three-phase input driving voltage at frequency of 0.033 Hz.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"41 1","pages":"1203-1206"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89817577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601237
A. Cresti, G. Parravicini
We study the effects of phase-breaking scattering processes on the electron conductance of quantum wires in strong magnetic fields. Our treatment makes use of the nonequilibrium Keldysh formalism and the self-consistent Born approximation for the many-body interactions. The differential conductance is carried out numerically by means of continued fractions and renormalization techniques within a tight-binding framework. We provide a unified description of dissipative and dissipationless currents, with clear crossovers from one to the other regime.
{"title":"Dephasing processes in quantum hall wires","authors":"A. Cresti, G. Parravicini","doi":"10.1109/NANO.2007.4601237","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601237","url":null,"abstract":"We study the effects of phase-breaking scattering processes on the electron conductance of quantum wires in strong magnetic fields. Our treatment makes use of the nonequilibrium Keldysh formalism and the self-consistent Born approximation for the many-body interactions. The differential conductance is carried out numerically by means of continued fractions and renormalization techniques within a tight-binding framework. We provide a unified description of dissipative and dissipationless currents, with clear crossovers from one to the other regime.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"173 1","pages":"484-488"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90957392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：