Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601140
T. Thiwawong, B. Tunhoo, J. Nukeaw
Multilayer hybrid thin films consisting of alternating layers of organic and inorganic materials were fabricated with powder of copper-phthalocyanine (CuPc) and zinc selenide (ZnSe) by electron beam evaporator. The structural and optical characterization of multilayer hybrid thin film were carried out by using X-ray diffraction (XRD), atomic force microscope (AFM) and UV-Vis absorption spectroscopy. XRD patterns show two peaks of the orientation of (200) plane monoclinic structure in CuPc material and (111) plane cubic structure in ZnSe material where pair numbers of multilayer hybrid thin film higher than two pairs. With the variation in the number of pairs of CuPc/ZnSe, AFM images present almost similar morphology but the optical absorption spectra are significantly changed. Such spectral changes can be interpreted by the effect of the aggregate size and the characteristic of the multilayer hybrid structure.
{"title":"Structural and optical properties of CuPc/ZnSe multilayer hybrid thin films prepared by electron beam evaporator","authors":"T. Thiwawong, B. Tunhoo, J. Nukeaw","doi":"10.1109/NANO.2007.4601140","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601140","url":null,"abstract":"Multilayer hybrid thin films consisting of alternating layers of organic and inorganic materials were fabricated with powder of copper-phthalocyanine (CuPc) and zinc selenide (ZnSe) by electron beam evaporator. The structural and optical characterization of multilayer hybrid thin film were carried out by using X-ray diffraction (XRD), atomic force microscope (AFM) and UV-Vis absorption spectroscopy. XRD patterns show two peaks of the orientation of (200) plane monoclinic structure in CuPc material and (111) plane cubic structure in ZnSe material where pair numbers of multilayer hybrid thin film higher than two pairs. With the variation in the number of pairs of CuPc/ZnSe, AFM images present almost similar morphology but the optical absorption spectra are significantly changed. Such spectral changes can be interpreted by the effect of the aggregate size and the characteristic of the multilayer hybrid structure.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91200058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601329
M. Simmons, F. Rueß, W. Pok, D. Thompson, M. Fuchsle, Giordano Scappucci, T. Reusch, K. Goh, S. R. Schofield, B. Weber, L. Oberbeck, A. Hamilton, F. Ratto
An important driving force behind the microelectronics industry is the ability to pack ever more features onto a silicon chip, by continually miniaturising the individual components. However, after 2015 there is no known technological route to reduce devices below 10 nm. We demonstrate a complete fabrication strategy towards atomic-scale device fabrication in silicon using phosphorus as a dopant in combination with scanning probe lithography and high purity, low temperature crystal growth. A major advantage of this strategy is the ability to investigate the role of dopant placement and atomically controlled growth on electronic device operation.
{"title":"Atomically precise silicon device fabrication","authors":"M. Simmons, F. Rueß, W. Pok, D. Thompson, M. Fuchsle, Giordano Scappucci, T. Reusch, K. Goh, S. R. Schofield, B. Weber, L. Oberbeck, A. Hamilton, F. Ratto","doi":"10.1109/NANO.2007.4601329","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601329","url":null,"abstract":"An important driving force behind the microelectronics industry is the ability to pack ever more features onto a silicon chip, by continually miniaturising the individual components. However, after 2015 there is no known technological route to reduce devices below 10 nm. We demonstrate a complete fabrication strategy towards atomic-scale device fabrication in silicon using phosphorus as a dopant in combination with scanning probe lithography and high purity, low temperature crystal growth. A major advantage of this strategy is the ability to investigate the role of dopant placement and atomically controlled growth on electronic device operation.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87194201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601189
Yi-Tsung Chang, Y. Ye, Chia-Yi Chen, M. Tsai, Si‐Chen Lee
Enhanced optical transmission through an Al film with perforated short-range 3times3, 4times4 and 5times5 hole arrays arranged in a long-range periodic structure is investigated. This three finite squared holes array constitutes an individual micro-cell, respectively. The measured transmission peak wavelength reveals that the surface plasmons are Fabry-Perot type resonance to different integer order. The ratio of periodicity between the super-periodic structure p and the NtimesN micro-cell d determines the integer order (where N is number of isolated hole; N=3, 4 and 5). Namely, when p/d>4, the order 4 and 5 surface plasmon modes with average hole spacing p/4 and p/5 are observed in 4times4 micro-cell array, respectively. The transmission intensities of order 4 mode are the strongest, and those of order 5 modes are barely seen. But as p/d approaches 5, the order 4 mode gradually disappear with the emergence of order 5 mode. The 3times3 and 5times5 micro-cell array have the same result. These phenomena suggest that the surface plasmons are Fabry-Perot type resonance within a super unit cell. The dispersion relations of surface plasmons are also observed.
{"title":"Extraordinary transmission through aluminum metal with superperiodic micro-cell arranged in a long-range periodic structure","authors":"Yi-Tsung Chang, Y. Ye, Chia-Yi Chen, M. Tsai, Si‐Chen Lee","doi":"10.1109/NANO.2007.4601189","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601189","url":null,"abstract":"Enhanced optical transmission through an Al film with perforated short-range 3times3, 4times4 and 5times5 hole arrays arranged in a long-range periodic structure is investigated. This three finite squared holes array constitutes an individual micro-cell, respectively. The measured transmission peak wavelength reveals that the surface plasmons are Fabry-Perot type resonance to different integer order. The ratio of periodicity between the super-periodic structure p and the NtimesN micro-cell d determines the integer order (where N is number of isolated hole; N=3, 4 and 5). Namely, when p/d>4, the order 4 and 5 surface plasmon modes with average hole spacing p/4 and p/5 are observed in 4times4 micro-cell array, respectively. The transmission intensities of order 4 mode are the strongest, and those of order 5 modes are barely seen. But as p/d approaches 5, the order 4 mode gradually disappear with the emergence of order 5 mode. The 3times3 and 5times5 micro-cell array have the same result. These phenomena suggest that the surface plasmons are Fabry-Perot type resonance within a super unit cell. The dispersion relations of surface plasmons are also observed.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73503896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601214
U. Wejinya, N. Xi, Yantao Shen, K. Lai
In this paper, a new mathematical model describing precisely the rotation/orientation of carbon nanotubes in viscous medium (acetone) is presented. This new mathematical model correctly assumes that carbon nanotubes form a line shape after undergoing AC dielectrophoretic force (DEP) compare to existing model that assumes carbon nanotubes to be a spherical particle. The new mathematical model is based on a new developed model for applied torque due to dielectrophoresis. It is also a method for controlled assembly of the CNTs on microstructures that have the plausibility to be scaled to wafer-level manufacturing. Simulation results are presented for the developed models. The developed model can be used to detect the position of carbon nanotubes and further implemented in the separation of semiconducting and metallic band structure carbon nanotubes. Ultimately, the developed model will provide a critical and major step towards the use of carbon nanotubes in the manufacturing of electronics and sensors for potential use in electrical circuits, as fiber and film, computer circuits, light bulb filament, ultracapacitors, combat jackets, etc.
{"title":"Controlling the orientation of carbon nanotubes in nano assembly","authors":"U. Wejinya, N. Xi, Yantao Shen, K. Lai","doi":"10.1109/NANO.2007.4601214","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601214","url":null,"abstract":"In this paper, a new mathematical model describing precisely the rotation/orientation of carbon nanotubes in viscous medium (acetone) is presented. This new mathematical model correctly assumes that carbon nanotubes form a line shape after undergoing AC dielectrophoretic force (DEP) compare to existing model that assumes carbon nanotubes to be a spherical particle. The new mathematical model is based on a new developed model for applied torque due to dielectrophoresis. It is also a method for controlled assembly of the CNTs on microstructures that have the plausibility to be scaled to wafer-level manufacturing. Simulation results are presented for the developed models. The developed model can be used to detect the position of carbon nanotubes and further implemented in the separation of semiconducting and metallic band structure carbon nanotubes. Ultimately, the developed model will provide a critical and major step towards the use of carbon nanotubes in the manufacturing of electronics and sensors for potential use in electrical circuits, as fiber and film, computer circuits, light bulb filament, ultracapacitors, combat jackets, etc.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73514532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601374
Yonghao Cui, Qi Wu, E. Schonbrun, M. Tinker, J. Lee, W. Park
We report an extremely compact (15.4 mum x 8 mum) silicon-based 2D slab nano photonic crystal transverse magnetic (TM) polarizer which blocks propagation of the transverse electric (TE) polarized light around telecommunication wavelength (1,550 nm). TM polarization occurs in a length of mere 4.9 mum and it has a great potential to be integrated in a complex photonic integrated circuits. To our knowledge, this is the first ever demonstration of silicon-based TM polarizer in telecommunication wavelength. 2D and 3D finite difference time domain (FDTD) simulation was utilized to design a triangular array of air holes in silicon. Such photonic crystal TM polarizer was fabricated in silicon-on-insulator wafer using focused ion beam and reactive ion etch with air hole diameter of 170 nm and pitch distance of 347 nm for the TM polarizer and 371 nm for the input and output waveguide. The device was fully characterized using tunable lasers in the wavelength range of 1,528 nm ~ 1,604 nm. Transmitted light intensities of the TE and TM polarized lights were measured which clearly showed the TE polarized light is filtered out around 1.55 mum wavelength.
我们报道了一种非常紧凑的(15.4 μ m x 8 μ m)硅基二维平板纳米光子晶体横向磁(TM)偏振器，它可以阻止横向电(TE)偏振光在电信波长(1,550 nm)周围的传播。TM极化的长度仅为4.9 μ m，在复杂的光子集成电路中具有很大的集成潜力。据我们所知，这是有史以来第一次在电信波长上展示硅基TM偏振器。利用二维和三维时域有限差分(FDTD)仿真方法设计了硅材料上的三角形气孔阵列。采用聚焦离子束和反应离子蚀刻技术，在绝缘体硅片上制备了这种光子晶体TM偏振片，TM偏振片的气孔直径为170 nm，间距为347 nm，输入输出波导的间距为371 nm。利用波长范围为1528 nm ~ 1604 nm的可调谐激光器对器件进行了全面表征。测量了TE和TM偏振光的透射光强，清楚地表明TE偏振光在1.55 μ m波长附近被滤除。
{"title":"Silicon-based 2D slab nano photonic crystal TM polarizer in telecommunication wavelength","authors":"Yonghao Cui, Qi Wu, E. Schonbrun, M. Tinker, J. Lee, W. Park","doi":"10.1109/NANO.2007.4601374","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601374","url":null,"abstract":"We report an extremely compact (15.4 mum x 8 mum) silicon-based 2D slab nano photonic crystal transverse magnetic (TM) polarizer which blocks propagation of the transverse electric (TE) polarized light around telecommunication wavelength (1,550 nm). TM polarization occurs in a length of mere 4.9 mum and it has a great potential to be integrated in a complex photonic integrated circuits. To our knowledge, this is the first ever demonstration of silicon-based TM polarizer in telecommunication wavelength. 2D and 3D finite difference time domain (FDTD) simulation was utilized to design a triangular array of air holes in silicon. Such photonic crystal TM polarizer was fabricated in silicon-on-insulator wafer using focused ion beam and reactive ion etch with air hole diameter of 170 nm and pitch distance of 347 nm for the TM polarizer and 371 nm for the input and output waveguide. The device was fully characterized using tunable lasers in the wavelength range of 1,528 nm ~ 1,604 nm. Transmitted light intensities of the TE and TM polarized lights were measured which clearly showed the TE polarized light is filtered out around 1.55 mum wavelength.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76671615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601242
Shaorong Du, Yangmin Li
Micromanipulation based on AFM (atomic force microscope) has become popular in recent years. Since the AFM probe tip can have several shapes, how to select tip shape is discussed for micromanipulation in this paper. Based on the Hamaker hypotheses and the Lennard-Jones potential, interactions between probe and substrate surface are analyzed for three typical shape probe tips, namely, quadrilateral pyramid, cone, and paraboloid. Simulations are presented, and conclusion is obtained: a quadrilateral pyramid probe tip with small inclination between edge and axis is the best choice for micromanipulation based on AFM.
{"title":"Micromanipulation based on AFM: Probe tip selection","authors":"Shaorong Du, Yangmin Li","doi":"10.1109/NANO.2007.4601242","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601242","url":null,"abstract":"Micromanipulation based on AFM (atomic force microscope) has become popular in recent years. Since the AFM probe tip can have several shapes, how to select tip shape is discussed for micromanipulation in this paper. Based on the Hamaker hypotheses and the Lennard-Jones potential, interactions between probe and substrate surface are analyzed for three typical shape probe tips, namely, quadrilateral pyramid, cone, and paraboloid. Simulations are presented, and conclusion is obtained: a quadrilateral pyramid probe tip with small inclination between edge and axis is the best choice for micromanipulation based on AFM.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75164494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601210
S.X. Chen, J.J. Li, C. Gu
The composite structure of silicon tips and vertical aligned carbon nanotubes (CNTs) was prepared using plasma enhanced hot filament chemical vapor deposition (PE-HFCVD) method on the silicon wafer, and Au/Ni film coated on the substrate was considered as a catalyst. High proportion hydrogen of 96% volume percentage and high total pressure are used during preparing process, and the pure CNTs, pure silicon tips, and the admixture of silicon tips and CNTs can be prepared by varying the total pressures, respectively. Scanning electron microscopy measurement shows that Si tips are formed in the vertical aligned CNTs, and the related formation mechanism of this admixture was discussed. The results of field emission measurement show that this composite structure has very excellent electron field emission properties - low threshold field, high emission current density and stable emission current, which are attributed to the increased field enhancement factor and reducing field shield effect for this composite structure.
{"title":"Field emission from the composite structure of silicon tips and vertical carbon nanotubes","authors":"S.X. Chen, J.J. Li, C. Gu","doi":"10.1109/NANO.2007.4601210","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601210","url":null,"abstract":"The composite structure of silicon tips and vertical aligned carbon nanotubes (CNTs) was prepared using plasma enhanced hot filament chemical vapor deposition (PE-HFCVD) method on the silicon wafer, and Au/Ni film coated on the substrate was considered as a catalyst. High proportion hydrogen of 96% volume percentage and high total pressure are used during preparing process, and the pure CNTs, pure silicon tips, and the admixture of silicon tips and CNTs can be prepared by varying the total pressures, respectively. Scanning electron microscopy measurement shows that Si tips are formed in the vertical aligned CNTs, and the related formation mechanism of this admixture was discussed. The results of field emission measurement show that this composite structure has very excellent electron field emission properties - low threshold field, high emission current density and stable emission current, which are attributed to the increased field enhancement factor and reducing field shield effect for this composite structure.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75447925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601361
King-yuen Wong, W. Tang, K. Lau, K.J. Chen
Surface acoustic wave (SAW) devices using two-dimensional electron gas (2DEG) as interdigital transducers (IDTs) on AlGaN/GaN heterostructure has been demonstrated using a planar isolation technique based on the fluoride-based (CF4) plasma treatment technique. The RF characteristics of the SAW filters with planar 2DEG IDTs are compared with SAW devices that are made of metal IDTs or hybrid metal/2DEG IDTs.
{"title":"Two-dimensional electron gas (2DEG) IDT SAW devices on AlGaN/GaN heterostructure","authors":"King-yuen Wong, W. Tang, K. Lau, K.J. Chen","doi":"10.1109/NANO.2007.4601361","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601361","url":null,"abstract":"Surface acoustic wave (SAW) devices using two-dimensional electron gas (2DEG) as interdigital transducers (IDTs) on AlGaN/GaN heterostructure has been demonstrated using a planar isolation technique based on the fluoride-based (CF4) plasma treatment technique. The RF characteristics of the SAW filters with planar 2DEG IDTs are compared with SAW devices that are made of metal IDTs or hybrid metal/2DEG IDTs.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78435791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601301
K. Lai, N. Xi, Jiangbo Zhang, Guangyong Li, Hongzhi Chen
We present a fabrication and packaging method of carbon nanotube (CNT) based infrared (IR) sensor chip using parylene C layer. CNT was found to be sensitive under near IR radiation and it could be used as IR sensing element. Parylene C thin film was used as a conformal pin hole free insulating layer and oxygen barrier for protecting CNTs during the detection. The IR transmission properties of parylene C layer and the influence on the response of the CNT sensor were studied. Our experimental results showed that the CNT sensor without parylene C protection exhibited current change when it was exposed to the IR laser. The sensing current percentage changes decreased when the parylene C thin film substrate was placed between the CNT sensor and IR laser source. It implied the IR absorption behavior of parylene C thin film. We also found that the IR absorption level is proportional to the thickness of the parylene C layer. The parylene C packaged CNT sensor was fabricated and tested under near IR radiation. Preliminary results indicated that the CNT IR detector coated with parylene C was capable of sensing IR radiation and exhibited repeatable response. Moreover, the IV characteristic of the sensor chip was measured when it was surrounded by dry ice for long time to investigate its long term stability under moisture environment. Therefore, the packaging process can become possible to fabricate a CNT based IR sensor array which possesses more stable and reliable performance.
{"title":"Packaging carbon nanotube based infrared detector","authors":"K. Lai, N. Xi, Jiangbo Zhang, Guangyong Li, Hongzhi Chen","doi":"10.1109/NANO.2007.4601301","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601301","url":null,"abstract":"We present a fabrication and packaging method of carbon nanotube (CNT) based infrared (IR) sensor chip using parylene C layer. CNT was found to be sensitive under near IR radiation and it could be used as IR sensing element. Parylene C thin film was used as a conformal pin hole free insulating layer and oxygen barrier for protecting CNTs during the detection. The IR transmission properties of parylene C layer and the influence on the response of the CNT sensor were studied. Our experimental results showed that the CNT sensor without parylene C protection exhibited current change when it was exposed to the IR laser. The sensing current percentage changes decreased when the parylene C thin film substrate was placed between the CNT sensor and IR laser source. It implied the IR absorption behavior of parylene C thin film. We also found that the IR absorption level is proportional to the thickness of the parylene C layer. The parylene C packaged CNT sensor was fabricated and tested under near IR radiation. Preliminary results indicated that the CNT IR detector coated with parylene C was capable of sensing IR radiation and exhibited repeatable response. Moreover, the IV characteristic of the sensor chip was measured when it was surrounded by dry ice for long time to investigate its long term stability under moisture environment. Therefore, the packaging process can become possible to fabricate a CNT based IR sensor array which possesses more stable and reliable performance.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74258178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Cu2O nanorods with extraordinary large surface area are synthesized by polyol method successfully. Their photocatalytic property is evaluated by the photodegradation of brilliant red dye under visible light irradiation. For comparison, Cu2O nanocubes are synthesized and evaluated with photocatalytic property as well. The results show that the photocatalytic activity of the Cu2O nanorods is more than one time higher than that for Cu2O nanocubes under visible light. Additionally, the structure of the Cu2O nanorods is very stable and they can not be oxidized to CuO even during the photocatalytic reaction process. It is noticeable that this kind of Cu2O nanorods has remarkable large surface areas 47.6 m2/g, which is about forty times as large as that for as-prepared Cu2O nanocubes and it is also three times larger than that for the reported porous Cu2O nanoparticles. The large surface area of Cu2O nanorods leads to its higher adsorption ability to the brilliant red dye and excellent high photocatalytic activity under visible light. Since Cu2O nanorods are very stable and have high photocatalytic activity under visible light, they are expected to be used in photocatalytic oxidation technology practically in the future.
{"title":"Cu2O nanorods with large surface area for photodegradation of organic pollutant under visible light","authors":"Lili Ma, Meng Peng, Jialin Li, Ying Yu, Zhenghua Chen","doi":"10.1109/NANO.2007.4601346","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601346","url":null,"abstract":"Cu2O nanorods with extraordinary large surface area are synthesized by polyol method successfully. Their photocatalytic property is evaluated by the photodegradation of brilliant red dye under visible light irradiation. For comparison, Cu2O nanocubes are synthesized and evaluated with photocatalytic property as well. The results show that the photocatalytic activity of the Cu2O nanorods is more than one time higher than that for Cu2O nanocubes under visible light. Additionally, the structure of the Cu2O nanorods is very stable and they can not be oxidized to CuO even during the photocatalytic reaction process. It is noticeable that this kind of Cu2O nanorods has remarkable large surface areas 47.6 m2/g, which is about forty times as large as that for as-prepared Cu2O nanocubes and it is also three times larger than that for the reported porous Cu2O nanoparticles. The large surface area of Cu2O nanorods leads to its higher adsorption ability to the brilliant red dye and excellent high photocatalytic activity under visible light. Since Cu2O nanorods are very stable and have high photocatalytic activity under visible light, they are expected to be used in photocatalytic oxidation technology practically in the future.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74082749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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