Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601330
Jae-Sung Lee, S. Do, Yong-Hyun Lee
This paper is focused on the improvement of MOS device reliability related to deuterium incorporation in gate oxide. The injection of D+ ions into the gate oxide film was achieved through low-energy implantation at the back-end of line (BEOL) for the purpose of the passivation of dangling bonds at SiO2/Si interface and the generation of deuterium bonds in SiO2 bulk. Device parameter variations, as well as the gate leakage current, depend on the degradation of gate oxide and, compared to corresponding hydrogen incorporation, are improved by deuterium incorporation. However, when the concentration of deuterium is redundant in gate oxide, excess traps are generated and degrade the performance. Our result suggests the novel method to incorporate deuterium in the MOS structure for the reliability.
{"title":"Deuterium implantation at the back-end of line for the improvement of gate oxide reliability in nano-scale MOSFETs","authors":"Jae-Sung Lee, S. Do, Yong-Hyun Lee","doi":"10.1109/NANO.2007.4601330","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601330","url":null,"abstract":"This paper is focused on the improvement of MOS device reliability related to deuterium incorporation in gate oxide. The injection of D+ ions into the gate oxide film was achieved through low-energy implantation at the back-end of line (BEOL) for the purpose of the passivation of dangling bonds at SiO2/Si interface and the generation of deuterium bonds in SiO2 bulk. Device parameter variations, as well as the gate leakage current, depend on the degradation of gate oxide and, compared to corresponding hydrogen incorporation, are improved by deuterium incorporation. However, when the concentration of deuterium is redundant in gate oxide, excess traps are generated and degrade the performance. Our result suggests the novel method to incorporate deuterium in the MOS structure for the reliability.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"250 1","pages":"907-910"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73059661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601286
S. Safiruddin, S. Cotofana
This paper presents a set of basic building blocks that corresponds to a universal set of primitives for delay insensitive circuits. We propose single electron tunneling circuit topologies and verify them by means of simulations. The simulations performed with SIMON 2.0 indicate that the circuits function as expected. Moreover the proposed circuits are input-output level compatible thus they can be potentially utilized in the implementation of larger asynchronous circuits.
{"title":"Building blocks for delay-insensitive circuits using single electron tunneling devices","authors":"S. Safiruddin, S. Cotofana","doi":"10.1109/NANO.2007.4601286","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601286","url":null,"abstract":"This paper presents a set of basic building blocks that corresponds to a universal set of primitives for delay insensitive circuits. We propose single electron tunneling circuit topologies and verify them by means of simulations. The simulations performed with SIMON 2.0 indicate that the circuits function as expected. Moreover the proposed circuits are input-output level compatible thus they can be potentially utilized in the implementation of larger asynchronous circuits.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"1 1","pages":"704-708"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75130853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601217
D. Litvinov, V. Parekh, E. Chunsheng, D. Smith, J. Rantschler, P. Ruchhoeft, D. Weller, S. Khizroev
Design considerations and fabrication of bit-patterned magnetic recording media are presented. The application of ion-beam proximity printing, a high-throughput direct-write lithography, to media patterning is evaluated. Ultra-high magnetic anisotropy (Co/Pd)N magnetic multilayers are analyzed as candidates for patterned recording layers. Following patterning, optimized multilayers are shown to exhibit coercivity values well in excess of 14kOe. It is found that the magnetization reversal in patterned bits takes place via domain wall nucleation and propagation. The nucleation field and the location of the nucleation site strongly depend on the bit edge imperfections and contribute to finite switching field distribution. Playback off a bit-patterned media using various magnetic reader designs is analyzed using reciprocity theory.
{"title":"Nanoscale bit-patterned media for next generation magnetic data storage applications","authors":"D. Litvinov, V. Parekh, E. Chunsheng, D. Smith, J. Rantschler, P. Ruchhoeft, D. Weller, S. Khizroev","doi":"10.1109/NANO.2007.4601217","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601217","url":null,"abstract":"Design considerations and fabrication of bit-patterned magnetic recording media are presented. The application of ion-beam proximity printing, a high-throughput direct-write lithography, to media patterning is evaluated. Ultra-high magnetic anisotropy (Co/Pd)N magnetic multilayers are analyzed as candidates for patterned recording layers. Following patterning, optimized multilayers are shown to exhibit coercivity values well in excess of 14kOe. It is found that the magnetization reversal in patterned bits takes place via domain wall nucleation and propagation. The nucleation field and the location of the nucleation site strongly depend on the bit edge imperfections and contribute to finite switching field distribution. Playback off a bit-patterned media using various magnetic reader designs is analyzed using reciprocity theory.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"31 1","pages":"395-398"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77190365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601216
Chengfan Cao, Jaeboong Choi, Youngjin Kim, S. Baik
Single walled carbon nanotubes show pronounced sharp UV-vis-NIR absorption peak distributions while they are individually dispersed in aqueous solution phase. In this paper, we present optical absorbance detection of DNA hybridization using developed ssDNA-SWNT conjugates. Hybridization of DNA oligonucleotides with their complementary sequences makes systematic red shifts of linked nanotubes in the near infrared region. Semiconducting tubes exhibit clear responses whereas metallic species do not. The results show that SWNTs may be used to selectively detect specific kinds of DNA oligonucleotides.
{"title":"Absorption spectroscopic study of DNA hybridization using single-walled carbon nanotubes","authors":"Chengfan Cao, Jaeboong Choi, Youngjin Kim, S. Baik","doi":"10.1109/NANO.2007.4601216","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601216","url":null,"abstract":"Single walled carbon nanotubes show pronounced sharp UV-vis-NIR absorption peak distributions while they are individually dispersed in aqueous solution phase. In this paper, we present optical absorbance detection of DNA hybridization using developed ssDNA-SWNT conjugates. Hybridization of DNA oligonucleotides with their complementary sequences makes systematic red shifts of linked nanotubes in the near infrared region. Semiconducting tubes exhibit clear responses whereas metallic species do not. The results show that SWNTs may be used to selectively detect specific kinds of DNA oligonucleotides.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"158 1","pages":"391-394"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77492694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601155
Guoping Cui, Haigang Yang, S. Xia
This paper presents a new CMOS peak detector that directly converts the peak of a sine wave signal to its digital representation. This peak detector is capable of capturing peak points that carry the information of the electrostatic field, simplifying the sample-and-hold requirement. By making use of the voltage to time conversion (or voltage to duty cycle conversion), the method boasts the advantage of high resolution compared with the conventional way of using AD converters. The circuit is fabricated in Chartered 0.35 um technology and is further tested.
{"title":"CMOS digitalized peak detector for a MEMS-based electrostatic field sensor","authors":"Guoping Cui, Haigang Yang, S. Xia","doi":"10.1109/NANO.2007.4601155","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601155","url":null,"abstract":"This paper presents a new CMOS peak detector that directly converts the peak of a sine wave signal to its digital representation. This peak detector is capable of capturing peak points that carry the information of the electrostatic field, simplifying the sample-and-hold requirement. By making use of the voltage to time conversion (or voltage to duty cycle conversion), the method boasts the advantage of high resolution compared with the conventional way of using AD converters. The circuit is fabricated in Chartered 0.35 um technology and is further tested.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"75 1","pages":"131-134"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76560493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601354
S. Jang, K. Hwang, Ji-Hwan Lee, Jun Ho Kim, B. Lee, S.U.S. Choi
We experimentally investigated effective thermal conductivities and viscosities of water-based nanofluids containing Al2O3 (Al2O3-nanofluids) with low concentration from vol. 0.01% to 0.3%. Without surfactant, Al2O3-nanofluids are manufactured by two-step method which is widely used. To examine suspension and dispersion characteristics of Al2O3-nanofluids, zeta potential as well as transmission electron micrograph of Al2O3 nanoparticles is observed. The effective viscosities of Al2O3-nanofluids according to the temperature are measured by a viscometer of oscillating type. The transient hot wire method is used in this study to measure the effective thermal conductivities of Al2O3-nanofluids. Based on the results the maximum increase of effective viscosities of Al2O3-nanofluids is up to 2.9% while the maximum enhancement of effective thermal conductivities is up to 1.44%.
{"title":"Effective thermal conductivities and viscosities of water-based nanofluids containing Al2O3 with low concentration","authors":"S. Jang, K. Hwang, Ji-Hwan Lee, Jun Ho Kim, B. Lee, S.U.S. Choi","doi":"10.1109/NANO.2007.4601354","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601354","url":null,"abstract":"We experimentally investigated effective thermal conductivities and viscosities of water-based nanofluids containing Al<sub>2</sub>O<sub>3</sub> (Al<sub>2</sub>O<sub>3</sub>-nanofluids) with low concentration from vol. 0.01% to 0.3%. Without surfactant, Al<sub>2</sub>O<sub>3</sub>-nanofluids are manufactured by two-step method which is widely used. To examine suspension and dispersion characteristics of Al<sub>2</sub>O<sub>3</sub>-nanofluids, zeta potential as well as transmission electron micrograph of Al<sub>2</sub>O<sub>3</sub> nanoparticles is observed. The effective viscosities of Al<sub>2</sub>O<sub>3</sub>-nanofluids according to the temperature are measured by a viscometer of oscillating type. The transient hot wire method is used in this study to measure the effective thermal conductivities of Al<sub>2</sub>O<sub>3</sub>-nanofluids. Based on the results the maximum increase of effective viscosities of Al<sub>2</sub>O<sub>3</sub>-nanofluids is up to 2.9% while the maximum enhancement of effective thermal conductivities is up to 1.44%.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"32 1","pages":"1011-1014"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76344940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601323
Y. Suzuki, H. Fujisaka, T. Kamio, K. Haeiwa
This paper presents an architecture of digital wave filters for processing bit-stream signals with nanoelectronic devices. We use three kinds of circuit modules for the filters. One of the modules is an integer delay built of unit delay cells connected in series. The rest of the modules are two types of adders based on bit-sorting networks which are built by connecting ANDOR gate pair cells regularly and locally. Using only the three modules we construct bandpass and band-elimination digital wave filters in which the circuit cells are connected locally. This local-connection architecture helps to surmount some difficulties in applying nanoelectronic devices. We designed a building block for the filters with quantum-dot cellular automata (QCA) and simulated its filtering operation. The simulation results show that the filter responds as we theoretically estimated.
{"title":"Digital filters built of locally connected nanoelectronic devices","authors":"Y. Suzuki, H. Fujisaka, T. Kamio, K. Haeiwa","doi":"10.1109/NANO.2007.4601323","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601323","url":null,"abstract":"This paper presents an architecture of digital wave filters for processing bit-stream signals with nanoelectronic devices. We use three kinds of circuit modules for the filters. One of the modules is an integer delay built of unit delay cells connected in series. The rest of the modules are two types of adders based on bit-sorting networks which are built by connecting ANDOR gate pair cells regularly and locally. Using only the three modules we construct bandpass and band-elimination digital wave filters in which the circuit cells are connected locally. This local-connection architecture helps to surmount some difficulties in applying nanoelectronic devices. We designed a building block for the filters with quantum-dot cellular automata (QCA) and simulated its filtering operation. The simulation results show that the filter responds as we theoretically estimated.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"217 1","pages":"873-878"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76774330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601196
O. Felfoul, P. Pouponneau, J. Mathieu, S. Martel
Magnetic resonance imaging characteristics of novel potential drug delivery agents are investigated. Candidate carriers considered in this study are iron-cobalt (Fe-Co) nanoparticles, magnetotactic bacteria (MTB), and magnetite (Fe3O4) microparticles. The micro and nanoparticles are highly magnetic and can be steered using gradient coils. MTB, on the other hand, are microorganisms that naturally follow the magnetic field lines through a mechanism called magnetotaxis. These carriers share the capability to be controlled by magnetic field and to be detected on MR images.
{"title":"MR imaging of Fe-Co nanoparticles, magnetotactic bacteria and Fe3O4 microparticles for future drug delivery applications","authors":"O. Felfoul, P. Pouponneau, J. Mathieu, S. Martel","doi":"10.1109/NANO.2007.4601196","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601196","url":null,"abstract":"Magnetic resonance imaging characteristics of novel potential drug delivery agents are investigated. Candidate carriers considered in this study are iron-cobalt (Fe-Co) nanoparticles, magnetotactic bacteria (MTB), and magnetite (Fe3O4) microparticles. The micro and nanoparticles are highly magnetic and can be steered using gradient coils. MTB, on the other hand, are microorganisms that naturally follow the magnetic field lines through a mechanism called magnetotaxis. These carriers share the capability to be controlled by magnetic field and to be detected on MR images.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"132 1","pages":"308-311"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76663680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601384
H. Xiong, Wenyong Wang, Qiliang Li, C. Richter, J. Suehle, Woong-Ki Hong, Takhee Lee, D. Fleetwood
Single-crystal ZnO nanowires have been fabricated as field effect transistors (FETs). The low frequency noise in the drain current of n-type ZnO FETs has been investigated through random telegraph signals (RTSs) at 4.2 K and 1/f noise at room temperature. At room temperature, the noise power spectra have a classic 1/f dependence with a Hooge parameter that is ~ 5 times 10-3. ZnO FETs measured in a dry O2 - environment displayed elevated noise levels that can be attributed to increased fluctuations associated with O2 - on the nanowire surfaces. At 4.2 K, the deviceiquests noise spectra change from 1/f to Lorentzian type, and the current traces as a function of time show random telegraph signals (RTSs). The channel current RTSs are attributed to correlated carrier number and mobility fluctuation due to the trapping and emission of carriers by discrete border traps. At certain bias conditions, the current in the channel shows three-level switching events with amplitudes as high as 40 %, from which two individual defects with energies close to the Fermi level in the ZnO channel can be distinguished.
{"title":"Random Telegraph Signals and 1/f Noise in ZnO Nanowire Field Effect Transistors","authors":"H. Xiong, Wenyong Wang, Qiliang Li, C. Richter, J. Suehle, Woong-Ki Hong, Takhee Lee, D. Fleetwood","doi":"10.1109/NANO.2007.4601384","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601384","url":null,"abstract":"Single-crystal ZnO nanowires have been fabricated as field effect transistors (FETs). The low frequency noise in the drain current of n-type ZnO FETs has been investigated through random telegraph signals (RTSs) at 4.2 K and 1/f noise at room temperature. At room temperature, the noise power spectra have a classic 1/f dependence with a Hooge parameter that is ~ 5 times 10-3. ZnO FETs measured in a dry O2 - environment displayed elevated noise levels that can be attributed to increased fluctuations associated with O2 - on the nanowire surfaces. At 4.2 K, the deviceiquests noise spectra change from 1/f to Lorentzian type, and the current traces as a function of time show random telegraph signals (RTSs). The channel current RTSs are attributed to correlated carrier number and mobility fluctuation due to the trapping and emission of carriers by discrete border traps. At certain bias conditions, the current in the channel shows three-level switching events with amplitudes as high as 40 %, from which two individual defects with energies close to the Fermi level in the ZnO channel can be distinguished.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"45 1","pages":"1139-1143"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89002778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601416
Yu-Han Yang, Tzu-Sheng Chang, H. Yen
We propose a unified framework for quantum walk algorithms on general graphs, which introduces the concept of unitary labelling into the quantum walk algorithm. In our framework, by assigning the incoming or outgoing arcs of the vertices with distinct labels, unitary properties of the quantum walks can be reserved. For a non-regular graph, auxiliary arcs are added to satisfy the constraint of unitary labelling. For non-unitary quantum walks, under the same framework, we provide a solution by intermediate measurement. This solution performs the Hadamard operator on auxiliary qubits and makes measurement after each step of the walk. Though the unitary constraint can be dissatisfied by applying such a solution, we show that the properties of the quantum walks are still reserved. With this intermediate measurement, the labelling constraint can be alleviated, and the walks on unitary graphs can exhibit the same probability distribution as the unitary quantum walks. Some simulation results over general graphs are given to justify our design.
{"title":"A unified framework for quantum random walk algorithms on general graphs","authors":"Yu-Han Yang, Tzu-Sheng Chang, H. Yen","doi":"10.1109/NANO.2007.4601416","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601416","url":null,"abstract":"We propose a unified framework for quantum walk algorithms on general graphs, which introduces the concept of unitary labelling into the quantum walk algorithm. In our framework, by assigning the incoming or outgoing arcs of the vertices with distinct labels, unitary properties of the quantum walks can be reserved. For a non-regular graph, auxiliary arcs are added to satisfy the constraint of unitary labelling. For non-unitary quantum walks, under the same framework, we provide a solution by intermediate measurement. This solution performs the Hadamard operator on auxiliary qubits and makes measurement after each step of the walk. Though the unitary constraint can be dissatisfied by applying such a solution, we show that the properties of the quantum walks are still reserved. With this intermediate measurement, the labelling constraint can be alleviated, and the walks on unitary graphs can exhibit the same probability distribution as the unitary quantum walks. Some simulation results over general graphs are given to justify our design.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"65 1","pages":"1277-1282"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87064886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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