Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601149
Lianqing Liu, N. Xi, Yilun Luo, Jiangbo Zhang, Guangyong Li
The main roadblock to atomic force microscope (AFM) based nanomanipulation is lack of real time visual feedback. Although the model based visual feedback can partly solve this problem, due to the complication of nano environment, it is difficult to accurately describe the behavior of nano-objects with a model. The modeling error will lead to an inaccurate feedback and a failed manipulation. In this paper, a Kalman filter is developed to real time detect this modeling error. During manipulation, the residual between the estimated behavior and the visual display behavior is real time updated. The residual's Mahalanobis distance is calculated and compared with an threshold to determine whether there is a position error. Once the threshold is exceeded, an alarm signal will be triggered to tell the system there is a position error. Furthermore, the position error can be on-line corrected by local scan method. With the assistance of Kalman filter and local scan, the position error not only can be real-time detected, but also can be online corrected. The visual display keeps matching with the real manipulation result during the whole manipulation process, which significantly improve the efficiency of the AFM based nano-assembly. Experiments of manipulating nano-particles are presented to verify the effectiveness of Kalman filter and local scan method.
{"title":"Real-time position error detecting in nanomanipulation using Kalman filter","authors":"Lianqing Liu, N. Xi, Yilun Luo, Jiangbo Zhang, Guangyong Li","doi":"10.1109/NANO.2007.4601149","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601149","url":null,"abstract":"The main roadblock to atomic force microscope (AFM) based nanomanipulation is lack of real time visual feedback. Although the model based visual feedback can partly solve this problem, due to the complication of nano environment, it is difficult to accurately describe the behavior of nano-objects with a model. The modeling error will lead to an inaccurate feedback and a failed manipulation. In this paper, a Kalman filter is developed to real time detect this modeling error. During manipulation, the residual between the estimated behavior and the visual display behavior is real time updated. The residual's Mahalanobis distance is calculated and compared with an threshold to determine whether there is a position error. Once the threshold is exceeded, an alarm signal will be triggered to tell the system there is a position error. Furthermore, the position error can be on-line corrected by local scan method. With the assistance of Kalman filter and local scan, the position error not only can be real-time detected, but also can be online corrected. The visual display keeps matching with the real manipulation result during the whole manipulation process, which significantly improve the efficiency of the AFM based nano-assembly. Experiments of manipulating nano-particles are presented to verify the effectiveness of Kalman filter and local scan method.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"1 1","pages":"100-105"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88563233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601384
H. Xiong, Wenyong Wang, Qiliang Li, C. Richter, J. Suehle, Woong-Ki Hong, Takhee Lee, D. Fleetwood
Single-crystal ZnO nanowires have been fabricated as field effect transistors (FETs). The low frequency noise in the drain current of n-type ZnO FETs has been investigated through random telegraph signals (RTSs) at 4.2 K and 1/f noise at room temperature. At room temperature, the noise power spectra have a classic 1/f dependence with a Hooge parameter that is ~ 5 times 10-3. ZnO FETs measured in a dry O2 - environment displayed elevated noise levels that can be attributed to increased fluctuations associated with O2 - on the nanowire surfaces. At 4.2 K, the deviceiquests noise spectra change from 1/f to Lorentzian type, and the current traces as a function of time show random telegraph signals (RTSs). The channel current RTSs are attributed to correlated carrier number and mobility fluctuation due to the trapping and emission of carriers by discrete border traps. At certain bias conditions, the current in the channel shows three-level switching events with amplitudes as high as 40 %, from which two individual defects with energies close to the Fermi level in the ZnO channel can be distinguished.
{"title":"Random Telegraph Signals and 1/f Noise in ZnO Nanowire Field Effect Transistors","authors":"H. Xiong, Wenyong Wang, Qiliang Li, C. Richter, J. Suehle, Woong-Ki Hong, Takhee Lee, D. Fleetwood","doi":"10.1109/NANO.2007.4601384","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601384","url":null,"abstract":"Single-crystal ZnO nanowires have been fabricated as field effect transistors (FETs). The low frequency noise in the drain current of n-type ZnO FETs has been investigated through random telegraph signals (RTSs) at 4.2 K and 1/f noise at room temperature. At room temperature, the noise power spectra have a classic 1/f dependence with a Hooge parameter that is ~ 5 times 10-3. ZnO FETs measured in a dry O2 - environment displayed elevated noise levels that can be attributed to increased fluctuations associated with O2 - on the nanowire surfaces. At 4.2 K, the deviceiquests noise spectra change from 1/f to Lorentzian type, and the current traces as a function of time show random telegraph signals (RTSs). The channel current RTSs are attributed to correlated carrier number and mobility fluctuation due to the trapping and emission of carriers by discrete border traps. At certain bias conditions, the current in the channel shows three-level switching events with amplitudes as high as 40 %, from which two individual defects with energies close to the Fermi level in the ZnO channel can be distinguished.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"45 1","pages":"1139-1143"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89002778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601279
Sun-Rong Jan, T.-H. Cheng, M. Liao, T. Hung, Y. Deng, C. Liu
Pt/oxide/n-6H-SiC tunneling diode has been fabricated using liquid phase deposited oxide as the tunneling oxide. At the negative bias, the electrons can be injected from the Pt gate to n-SiC, and recombine radiatively with the trapped holes in the defects near the oxide/SiC interface. The electroluminescence at room temperature from the SiC MOS tunneling diodes is observed for the first time. The light intensity decrease with the decreasing temperature. At the positive bias, the electron tunneling current from SiC to Pt gate is dominant, and the radiative recombination in SiC is not observed.
{"title":"Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes","authors":"Sun-Rong Jan, T.-H. Cheng, M. Liao, T. Hung, Y. Deng, C. Liu","doi":"10.1109/NANO.2007.4601279","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601279","url":null,"abstract":"Pt/oxide/n-6H-SiC tunneling diode has been fabricated using liquid phase deposited oxide as the tunneling oxide. At the negative bias, the electrons can be injected from the Pt gate to n-SiC, and recombine radiatively with the trapped holes in the defects near the oxide/SiC interface. The electroluminescence at room temperature from the SiC MOS tunneling diodes is observed for the first time. The light intensity decrease with the decreasing temperature. At the positive bias, the electron tunneling current from SiC to Pt gate is dominant, and the radiative recombination in SiC is not observed.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"9 1","pages":"674-677"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85135950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601222
B. Tierney, S. Goodnick
An ensemble Monte Carlo program, in conjunction with an 8-band k.p self-consistent solver, is used to simulate the temporal and spatial evolution of the spin polarization of current through a GaAs/AlGaAs heterostructure with a source and drain defined as quantum point contacts that spin-polarize the current. Results relate the effect of an applied gate voltage on both the Dresselhaus and Rashba contributions of the D'yakanov-Perel spin-flip scattering mechanism, the predominant spin scattering mechanism in AlGaAs/GaAs heterostructures at 300 K. Results are presented on the simulation of a spin-FET structure using quantum point contacts (QPCs) as a spin polarizer and spin detector.
{"title":"Monte Carlo simulation of spin-polarized transport in GaAs nanostructures","authors":"B. Tierney, S. Goodnick","doi":"10.1109/NANO.2007.4601222","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601222","url":null,"abstract":"An ensemble Monte Carlo program, in conjunction with an 8-band k.p self-consistent solver, is used to simulate the temporal and spatial evolution of the spin polarization of current through a GaAs/AlGaAs heterostructure with a source and drain defined as quantum point contacts that spin-polarize the current. Results relate the effect of an applied gate voltage on both the Dresselhaus and Rashba contributions of the D'yakanov-Perel spin-flip scattering mechanism, the predominant spin scattering mechanism in AlGaAs/GaAs heterostructures at 300 K. Results are presented on the simulation of a spin-FET structure using quantum point contacts (QPCs) as a spin polarizer and spin detector.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"19 1","pages":"414-417"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89546780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601180
Jun Zhang, A. Osgood, Y. Shirai, Jean‐François Morin, T. Sasaki, J. Tour, K. Kelly
To build up true molecular machines and understand the mechanics of nanoscale motion and manipulation in molecular system, we have created and investigated a family of molecules based around the concept of the nanocar, which has the rolling wheels made of spherical fullerene or carborane molecules. Assisted by scanning tunneling microscopy (STM), we have successfully characterized and manipulated these molecules. In addition, we have observed the behavior of these systems when thermal energy is applied. These initial studies open a new realm of nano-sized mechanical, chemical, and electrical devices.
{"title":"Investigating the motion of molecular machines on surfaces by STM: The nanocar and beyond","authors":"Jun Zhang, A. Osgood, Y. Shirai, Jean‐François Morin, T. Sasaki, J. Tour, K. Kelly","doi":"10.1109/NANO.2007.4601180","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601180","url":null,"abstract":"To build up true molecular machines and understand the mechanics of nanoscale motion and manipulation in molecular system, we have created and investigated a family of molecules based around the concept of the nanocar, which has the rolling wheels made of spherical fullerene or carborane molecules. Assisted by scanning tunneling microscopy (STM), we have successfully characterized and manipulated these molecules. In addition, we have observed the behavior of these systems when thermal energy is applied. These initial studies open a new realm of nano-sized mechanical, chemical, and electrical devices.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"1 1","pages":"243-246"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89710828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601291
A. Nain, A. Gupta, C. Amon, M. Sitti
We present a method for dry spinning polymeric nano/microfiber arrays. In this technique polymer solution is continuously ejected from a stationary glass micropipette and the fibers are deposited as continuous arrays in parallel and complex geometrical configurations on a rotating substrate mounted on to a translation stage. As the polymer solution exits the glass micropipette, ambient air is used to evaporate the solvent, thus solidifying the fiber which is then deposited on the rotating substrate. For a given polymer, altering the processing and material parameters allows depositing fiber arrays with highly tunable porosities and uniform fiber diameters. The fiber array porosity is observed to decrease with increasing angular velocity of the rotating substrate at a constant translational stage velocity. Fiber array breaking strength experiments as a function of porosity show higher loads required to break low porosity arrays, which is critical in designing stronger materials. Additionally, single and double layered biological scaffolds fabricated using this technique are seeded with mouse C2C12 cells and cellular dynamics of adhesion, migration and proliferation is investigated.
{"title":"Dry spinning polymeric nano/microfiber arrays using glass micropipettes with controlled porosities and fiber diameters","authors":"A. Nain, A. Gupta, C. Amon, M. Sitti","doi":"10.1109/NANO.2007.4601291","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601291","url":null,"abstract":"We present a method for dry spinning polymeric nano/microfiber arrays. In this technique polymer solution is continuously ejected from a stationary glass micropipette and the fibers are deposited as continuous arrays in parallel and complex geometrical configurations on a rotating substrate mounted on to a translation stage. As the polymer solution exits the glass micropipette, ambient air is used to evaporate the solvent, thus solidifying the fiber which is then deposited on the rotating substrate. For a given polymer, altering the processing and material parameters allows depositing fiber arrays with highly tunable porosities and uniform fiber diameters. The fiber array porosity is observed to decrease with increasing angular velocity of the rotating substrate at a constant translational stage velocity. Fiber array breaking strength experiments as a function of porosity show higher loads required to break low porosity arrays, which is critical in designing stronger materials. Additionally, single and double layered biological scaffolds fabricated using this technique are seeded with mouse C2C12 cells and cellular dynamics of adhesion, migration and proliferation is investigated.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"2015 1","pages":"728-732"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87055889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601416
Yu-Han Yang, Tzu-Sheng Chang, H. Yen
We propose a unified framework for quantum walk algorithms on general graphs, which introduces the concept of unitary labelling into the quantum walk algorithm. In our framework, by assigning the incoming or outgoing arcs of the vertices with distinct labels, unitary properties of the quantum walks can be reserved. For a non-regular graph, auxiliary arcs are added to satisfy the constraint of unitary labelling. For non-unitary quantum walks, under the same framework, we provide a solution by intermediate measurement. This solution performs the Hadamard operator on auxiliary qubits and makes measurement after each step of the walk. Though the unitary constraint can be dissatisfied by applying such a solution, we show that the properties of the quantum walks are still reserved. With this intermediate measurement, the labelling constraint can be alleviated, and the walks on unitary graphs can exhibit the same probability distribution as the unitary quantum walks. Some simulation results over general graphs are given to justify our design.
{"title":"A unified framework for quantum random walk algorithms on general graphs","authors":"Yu-Han Yang, Tzu-Sheng Chang, H. Yen","doi":"10.1109/NANO.2007.4601416","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601416","url":null,"abstract":"We propose a unified framework for quantum walk algorithms on general graphs, which introduces the concept of unitary labelling into the quantum walk algorithm. In our framework, by assigning the incoming or outgoing arcs of the vertices with distinct labels, unitary properties of the quantum walks can be reserved. For a non-regular graph, auxiliary arcs are added to satisfy the constraint of unitary labelling. For non-unitary quantum walks, under the same framework, we provide a solution by intermediate measurement. This solution performs the Hadamard operator on auxiliary qubits and makes measurement after each step of the walk. Though the unitary constraint can be dissatisfied by applying such a solution, we show that the properties of the quantum walks are still reserved. With this intermediate measurement, the labelling constraint can be alleviated, and the walks on unitary graphs can exhibit the same probability distribution as the unitary quantum walks. Some simulation results over general graphs are given to justify our design.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"65 1","pages":"1277-1282"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87064886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601289
I. Mircea, S. Fatikow, A. Sill
Microrobot-based nanoindentation is a relatively new testing technique, which uses microrobot based methods for performing nanoindentation experiments. The use of the microrobot-based nanoindentation is a example how microrobotic technology can help the materials research. In this work, the hardness of an epoxy-based silver-filled electrically conductive adhesive (ECA) type PC 3002 has been determined using this method. Flat ECA specimens have been investigated after a first curing at 70degC for 120 minutes, respectively after a curing time of 150 minutes, 180 minutes, 240 minutes, 300 minutes, and finally after 325 minutes at the same temperature. The maximum indentation depth was 1 mum. The hardness of the ECA has shown an increase with the increase of the curing time at constant temperature. The set-up uses a Berkovich diamond tip for performing nanoindentation tests. The set-up requires calibrations with reference specimens (fused silica and sapphire) for calculating hardness and Young's modulus of the tested material. Preliminary results are very promising: by comparing the slope of the loading stage of the nanoindentation tests on different specimens, the difference in hardness can be qualitatively evidenced.
{"title":"Microrobot-based nanoindentation of an epoxy-based electrically conductive adhesive","authors":"I. Mircea, S. Fatikow, A. Sill","doi":"10.1109/NANO.2007.4601289","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601289","url":null,"abstract":"Microrobot-based nanoindentation is a relatively new testing technique, which uses microrobot based methods for performing nanoindentation experiments. The use of the microrobot-based nanoindentation is a example how microrobotic technology can help the materials research. In this work, the hardness of an epoxy-based silver-filled electrically conductive adhesive (ECA) type PC 3002 has been determined using this method. Flat ECA specimens have been investigated after a first curing at 70degC for 120 minutes, respectively after a curing time of 150 minutes, 180 minutes, 240 minutes, 300 minutes, and finally after 325 minutes at the same temperature. The maximum indentation depth was 1 mum. The hardness of the ECA has shown an increase with the increase of the curing time at constant temperature. The set-up uses a Berkovich diamond tip for performing nanoindentation tests. The set-up requires calibrations with reference specimens (fused silica and sapphire) for calculating hardness and Young's modulus of the tested material. Preliminary results are very promising: by comparing the slope of the loading stage of the nanoindentation tests on different specimens, the difference in hardness can be qualitatively evidenced.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"23 1","pages":"719-722"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75857030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601330
Jae-Sung Lee, S. Do, Yong-Hyun Lee
This paper is focused on the improvement of MOS device reliability related to deuterium incorporation in gate oxide. The injection of D+ ions into the gate oxide film was achieved through low-energy implantation at the back-end of line (BEOL) for the purpose of the passivation of dangling bonds at SiO2/Si interface and the generation of deuterium bonds in SiO2 bulk. Device parameter variations, as well as the gate leakage current, depend on the degradation of gate oxide and, compared to corresponding hydrogen incorporation, are improved by deuterium incorporation. However, when the concentration of deuterium is redundant in gate oxide, excess traps are generated and degrade the performance. Our result suggests the novel method to incorporate deuterium in the MOS structure for the reliability.
{"title":"Deuterium implantation at the back-end of line for the improvement of gate oxide reliability in nano-scale MOSFETs","authors":"Jae-Sung Lee, S. Do, Yong-Hyun Lee","doi":"10.1109/NANO.2007.4601330","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601330","url":null,"abstract":"This paper is focused on the improvement of MOS device reliability related to deuterium incorporation in gate oxide. The injection of D+ ions into the gate oxide film was achieved through low-energy implantation at the back-end of line (BEOL) for the purpose of the passivation of dangling bonds at SiO2/Si interface and the generation of deuterium bonds in SiO2 bulk. Device parameter variations, as well as the gate leakage current, depend on the degradation of gate oxide and, compared to corresponding hydrogen incorporation, are improved by deuterium incorporation. However, when the concentration of deuterium is redundant in gate oxide, excess traps are generated and degrade the performance. Our result suggests the novel method to incorporate deuterium in the MOS structure for the reliability.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"250 1","pages":"907-910"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73059661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601410
Chi-Yuan Lee, Shuo-Jen Lee, Ren-De Huang, C. Chuang
This work employs porous silicon as a gas diffusion layer (GDL) in a micro proton exchange membrane fuel cell (muPEMFC) and a micro direct methanol fuel cell (muDMFC). Pt catalyst is deposited on the surface of, and inside, the porous silicon to improve its conductivity. Porous silicon with Pt catalyst replaces traditional GDL, and the Pt metal that remains on the rib is used to form a micro thermal sensor in a single lithographic process. The GDL was replaced by porous silicon and used in a muPEMFC and muDMFC. Wet etching is applied to a 500 mum-thick layer of silicon to yield fuel channels with a depth of 450 mum and a width of 200 mum. The pores in the fabricated structure had a diameter of 10 mum; the thickness of the structure was 50 mum. Therefore, the GDLs of the fuel cell were fabricated using macro-porous silicon technology. Porous silicon was fabricated by photoelectrochemical porous silicon etching. The top-side of the fuel channel was exposed to light from a halogen lamp. The porous structure was fabricated at the bottom of the fuel channel and patterned by anodization; and the micro thermal sensors were integrated on the rib. The experimental results demonstrated that the maximums power density of muDMFC and muPEMFC were 1.784 mW/cm2 and 9.37 mW/cm2. 30SCCM and 2 M methanol were used with 10 mum holes, various humidities and heating temperatures.
{"title":"Integration of the micro thermal sensor and porous silicon as the gas diffusion layer for micro fuel cell","authors":"Chi-Yuan Lee, Shuo-Jen Lee, Ren-De Huang, C. Chuang","doi":"10.1109/NANO.2007.4601410","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601410","url":null,"abstract":"This work employs porous silicon as a gas diffusion layer (GDL) in a micro proton exchange membrane fuel cell (muPEMFC) and a micro direct methanol fuel cell (muDMFC). Pt catalyst is deposited on the surface of, and inside, the porous silicon to improve its conductivity. Porous silicon with Pt catalyst replaces traditional GDL, and the Pt metal that remains on the rib is used to form a micro thermal sensor in a single lithographic process. The GDL was replaced by porous silicon and used in a muPEMFC and muDMFC. Wet etching is applied to a 500 mum-thick layer of silicon to yield fuel channels with a depth of 450 mum and a width of 200 mum. The pores in the fabricated structure had a diameter of 10 mum; the thickness of the structure was 50 mum. Therefore, the GDLs of the fuel cell were fabricated using macro-porous silicon technology. Porous silicon was fabricated by photoelectrochemical porous silicon etching. The top-side of the fuel channel was exposed to light from a halogen lamp. The porous structure was fabricated at the bottom of the fuel channel and patterned by anodization; and the micro thermal sensors were integrated on the rib. The experimental results demonstrated that the maximums power density of muDMFC and muPEMFC were 1.784 mW/cm2 and 9.37 mW/cm2. 30SCCM and 2 M methanol were used with 10 mum holes, various humidities and heating temperatures.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"11 1","pages":"1252-1255"},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90464449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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