Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601266
K. Lingasubramanian, S. Bhanja
Reliability is a crucial issue in nanoscale devices including both CMOS (beyond 22 nm) and non-CMOS. Devices in this regime tend to be more prone to errors due to thermal effects creating uncertainty in device characteristics. The transient nature of these errors commands the need for a probabilistic model that can represent the inherent circuit logic and can measure the errors. In sequential logic the error occurred in a particular time frame will be propagated to consecutive time frames thereby making the device more volatile. Any model that can represent a sequential logic should handle both spatial dependencies between nodes in a single time slice and temporal dependencies between nodes of different time slices. While modeling error in sequential logic the complexity arises in handling the temporal dependencies due to the feedback. Essentially, the feedback makes the system non-causal where outputs depend not only on inputs but also its own previous values. Depending on the circuit structure and the nature of feedback, various circuits would offer different degree of temporal dependence. In this work we propose a probabilistic error model for sequential logic that can measure the average output error probability that account for the spatio-temporal nature of the inherent dependencies using an temporally evolving causal Bayesian Networks also called Dynamic Bayesian Networks.
{"title":"Probabilistic error modeling for sequential logic","authors":"K. Lingasubramanian, S. Bhanja","doi":"10.1109/NANO.2007.4601266","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601266","url":null,"abstract":"Reliability is a crucial issue in nanoscale devices including both CMOS (beyond 22 nm) and non-CMOS. Devices in this regime tend to be more prone to errors due to thermal effects creating uncertainty in device characteristics. The transient nature of these errors commands the need for a probabilistic model that can represent the inherent circuit logic and can measure the errors. In sequential logic the error occurred in a particular time frame will be propagated to consecutive time frames thereby making the device more volatile. Any model that can represent a sequential logic should handle both spatial dependencies between nodes in a single time slice and temporal dependencies between nodes of different time slices. While modeling error in sequential logic the complexity arises in handling the temporal dependencies due to the feedback. Essentially, the feedback makes the system non-causal where outputs depend not only on inputs but also its own previous values. Depending on the circuit structure and the nature of feedback, various circuits would offer different degree of temporal dependence. In this work we propose a probabilistic error model for sequential logic that can measure the average output error probability that account for the spatio-temporal nature of the inherent dependencies using an temporally evolving causal Bayesian Networks also called Dynamic Bayesian Networks.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75364774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601287
T. Nee, Jen-Cheng Wang, H. Shen, Ya-Fen Wu
Unique correlations between the excitonic characteristics and hetero-interface charge distribution of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) were investigated over a broad range of temperatures. The dependence of non-unity ideality factors extracted from the current-voltage analysis on temperature determines the carrier-transport mechanisms in the heterodevices. Furthermore, the carrier tunneling processes via the extent of the charge population consequently cause anomaly more pseudo-temperature (To) and further characteristic energy (Eo), result in the abnormal deterioration of the luminescence intensities with small effective density of state. With respect to conventional GaN barrier devices, low-indium MQB devices inherently exhibit a small To over a variety of temperature ranges. The small To associated with a small characteristic energy and charge population of the multilayer interface states is obtained for each sample at the higher temperature regime. Accordingly, the high-indium MQB ensemble manifests a relatively higher characteristic energy than does the low-indium MQB ensemble. The characteristic energy Eo for the LEDs with InxGa1-xN/GaN multiquantum barriers were found to be decreased as increased In composition of InxGa1-xN/GaN MQBs. Correspondingly, the temperature-dependent electroluminescence observations suggest that the characteristic energy Eo anomaly caused the spectral intensity to deteriorate.
{"title":"The dependence of excitonic characteristics on the interface charge distribution with multiquantum barrier","authors":"T. Nee, Jen-Cheng Wang, H. Shen, Ya-Fen Wu","doi":"10.1109/NANO.2007.4601287","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601287","url":null,"abstract":"Unique correlations between the excitonic characteristics and hetero-interface charge distribution of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) were investigated over a broad range of temperatures. The dependence of non-unity ideality factors extracted from the current-voltage analysis on temperature determines the carrier-transport mechanisms in the heterodevices. Furthermore, the carrier tunneling processes via the extent of the charge population consequently cause anomaly more pseudo-temperature (To) and further characteristic energy (Eo), result in the abnormal deterioration of the luminescence intensities with small effective density of state. With respect to conventional GaN barrier devices, low-indium MQB devices inherently exhibit a small To over a variety of temperature ranges. The small To associated with a small characteristic energy and charge population of the multilayer interface states is obtained for each sample at the higher temperature regime. Accordingly, the high-indium MQB ensemble manifests a relatively higher characteristic energy than does the low-indium MQB ensemble. The characteristic energy Eo for the LEDs with InxGa1-xN/GaN multiquantum barriers were found to be decreased as increased In composition of InxGa1-xN/GaN MQBs. Correspondingly, the temperature-dependent electroluminescence observations suggest that the characteristic energy Eo anomaly caused the spectral intensity to deteriorate.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74391653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601218
Weisheng Zhao, E. Belhaire, C. Chappert
Spin Transfer Torque (STT) writing approach based Magnetic Tunnel Junction (Spin-MTJ) is the excellent candidate to be used as Spintronics device in Magnetic RAM (MRAM) and Magnetic Logic. We present the first Non-volatile Flip-Flop based on this device for Field Programmable Gate Array (FPGA) and System On Chip (SOC) circuits, which can make these circuits fully non-volatile by storing permanently all the data processed in the Spin-MTJ memory cells. The non-volatility enables logic circuits to decrease significantly the start-up latency of these circuits from some micro seconds down to some hundred pico seconds. By using St microelectronics 90 nm CMOS technology and a behavior Spin-MTJ simulation Model in Verilog-A language, this non-volatile Flip-Flop has been demonstrated that it works not only in very high speed or low propagation delay, but also keeps low power dissipation and small cell surface.
{"title":"Spin-MTJ based Non-volatile Flip-Flop","authors":"Weisheng Zhao, E. Belhaire, C. Chappert","doi":"10.1109/NANO.2007.4601218","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601218","url":null,"abstract":"Spin Transfer Torque (STT) writing approach based Magnetic Tunnel Junction (Spin-MTJ) is the excellent candidate to be used as Spintronics device in Magnetic RAM (MRAM) and Magnetic Logic. We present the first Non-volatile Flip-Flop based on this device for Field Programmable Gate Array (FPGA) and System On Chip (SOC) circuits, which can make these circuits fully non-volatile by storing permanently all the data processed in the Spin-MTJ memory cells. The non-volatility enables logic circuits to decrease significantly the start-up latency of these circuits from some micro seconds down to some hundred pico seconds. By using St microelectronics 90 nm CMOS technology and a behavior Spin-MTJ simulation Model in Verilog-A language, this non-volatile Flip-Flop has been demonstrated that it works not only in very high speed or low propagation delay, but also keeps low power dissipation and small cell surface.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74803696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601382
C. Wongchoosuk, Sriprajak Krongsuk, T. Kerdcharoen
The interactions between various single-walled carbon nanotubes (SWNTs) and water molecules have been studied using first principles calculations and molecular dynamics (MD) simulations. The SWNTs were modeled by varying the diameter ranging from the chiral vector (6,0) to (9,0), and by modifying the terminal ends with hydroxyl (-OH) and carboxyl (-COOH) functional groups for the nanotubes having chiral vector (9,0). Based on the potential energy surface study, it was found that movement of a water molecule into the tipmodified tubes is easier than that of the pristine tube. It was also found that the tubule diameter play an important role for solvation. The results from MD simulations indicate that the orientation of waters interacting with all of model tubes is rather similar. Water molecules prefer to occupy around the tip of carbon nanotubes than other parts. The hydrophilic behavior of functionalized SWNT is improved over the pristine tube as described by the first principles results.
{"title":"First principles and MD simulation study of the interaction of functionalized carbon nanotubes with water molecules","authors":"C. Wongchoosuk, Sriprajak Krongsuk, T. Kerdcharoen","doi":"10.1109/NANO.2007.4601382","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601382","url":null,"abstract":"The interactions between various single-walled carbon nanotubes (SWNTs) and water molecules have been studied using first principles calculations and molecular dynamics (MD) simulations. The SWNTs were modeled by varying the diameter ranging from the chiral vector (6,0) to (9,0), and by modifying the terminal ends with hydroxyl (-OH) and carboxyl (-COOH) functional groups for the nanotubes having chiral vector (9,0). Based on the potential energy surface study, it was found that movement of a water molecule into the tipmodified tubes is easier than that of the pristine tube. It was also found that the tubule diameter play an important role for solvation. The results from MD simulations indicate that the orientation of waters interacting with all of model tubes is rather similar. Water molecules prefer to occupy around the tip of carbon nanotubes than other parts. The hydrophilic behavior of functionalized SWNT is improved over the pristine tube as described by the first principles results.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81411394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601136
Xin Zhao, Lei Wang, Yiyong Tan, G. Sun, G. Lu
Due to MEMS device needs highly accurate design, a novel design methodology for MEMS device is put forward in this paper. Firstly, top-down and bottom-up hybrid design process based on IP library is proposed. It facilitates and speeds up design cycle and reduces the expense of MEMS design by using IP components which have been successfully implemented. Secondly, virtual fabrication process is proposed. It is used to establish stable, accurate and robust 3D geometry of device according to the fabrication process. Voxel-based visualization technique is applied to virtual fabrication process to achieve better process simulation result. It could help designers achieve highly accurate fabrication process and result. Thirdly, virtual operation is proposed. It is used to visualize and simulate the mechanical operation of MEMS device. This module could exhibit 3D realistic animation in virtual reality (VR) environment. It could help designers achieve highly accurate physical operation characteristic of MEMS device. With the help of virtual fabrication process and virtual operation, intuitive image and realistic animation of MEMS device is exhibited at the design stage. An available prototyping MEMS CAD which implements both top-down and bottom-up design notion integrates with virtual fabrication process and virtual operation. A bimetallic thermally-actuated micropump is studied through the paper using this novel design methodology.
{"title":"A novel design methodology for MEMS device","authors":"Xin Zhao, Lei Wang, Yiyong Tan, G. Sun, G. Lu","doi":"10.1109/NANO.2007.4601136","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601136","url":null,"abstract":"Due to MEMS device needs highly accurate design, a novel design methodology for MEMS device is put forward in this paper. Firstly, top-down and bottom-up hybrid design process based on IP library is proposed. It facilitates and speeds up design cycle and reduces the expense of MEMS design by using IP components which have been successfully implemented. Secondly, virtual fabrication process is proposed. It is used to establish stable, accurate and robust 3D geometry of device according to the fabrication process. Voxel-based visualization technique is applied to virtual fabrication process to achieve better process simulation result. It could help designers achieve highly accurate fabrication process and result. Thirdly, virtual operation is proposed. It is used to visualize and simulate the mechanical operation of MEMS device. This module could exhibit 3D realistic animation in virtual reality (VR) environment. It could help designers achieve highly accurate physical operation characteristic of MEMS device. With the help of virtual fabrication process and virtual operation, intuitive image and realistic animation of MEMS device is exhibited at the design stage. An available prototyping MEMS CAD which implements both top-down and bottom-up design notion integrates with virtual fabrication process and virtual operation. A bimetallic thermally-actuated micropump is studied through the paper using this novel design methodology.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84993438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601321
H. Joyce, Q. Gao, Y. Kim, H. Tan, C. Jagadish
We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of these nanowires. Binary and ternary nanowires of GaAs, InAs, InP, AlGaAs and InGaAs are achieved. We discuss the nucleation and growth issues involved in fabricating high quality nanowires suitable for device applications. We have fabricated and characterised a variety of axial and radial heterostructures including GaAs/InGaAs superlattices, and GaAs/AlGaAs core- shell and core-multishell nanowires.
{"title":"Growth, Structural and Optical Properties of III-V Nanowires for Optoelectronic Applications","authors":"H. Joyce, Q. Gao, Y. Kim, H. Tan, C. Jagadish","doi":"10.1109/NANO.2007.4601321","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601321","url":null,"abstract":"We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of these nanowires. Binary and ternary nanowires of GaAs, InAs, InP, AlGaAs and InGaAs are achieved. We discuss the nucleation and growth issues involved in fabricating high quality nanowires suitable for device applications. We have fabricated and characterised a variety of axial and radial heterostructures including GaAs/InGaAs superlattices, and GaAs/AlGaAs core- shell and core-multishell nanowires.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76989974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601157
Qiliang Li, C. Richter, H. Xiong, J. Suehle
We present the integration and characterization of nanowire electromechanical switches consisting of chemical-vapor-deposition grown silicon nanowires suspended over metal electrodes. The devices operate with the suspended part of the nanowire bent to touch metal electrode via electromechanical force by applying voltage. The reversible switching, high on/off current ratio, small subthreshold slope and low switching energy compared to current Si CMOS make the switches very attractive for logic device application. In addition, we have developed a physical model to simulate the switching characteristics and extract the material properties.
{"title":"Nanowire electromechanical logic switch","authors":"Qiliang Li, C. Richter, H. Xiong, J. Suehle","doi":"10.1109/NANO.2007.4601157","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601157","url":null,"abstract":"We present the integration and characterization of nanowire electromechanical switches consisting of chemical-vapor-deposition grown silicon nanowires suspended over metal electrodes. The devices operate with the suspended part of the nanowire bent to touch metal electrode via electromechanical force by applying voltage. The reversible switching, high on/off current ratio, small subthreshold slope and low switching energy compared to current Si CMOS make the switches very attractive for logic device application. In addition, we have developed a physical model to simulate the switching characteristics and extract the material properties.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86035537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601294
A. Subramanian, T. Choi, Lixin Dong, D. Poulikakos, B. Nelson
Relative displacements between the atomically smooth, nested shells in multiwalled carbon nanotubes (MWNTs) can be used as a robust nanoscale motion enabling mechanism for transduction applications such as bearings, switches, GHz-oscillators, shuttles, memories, syringes and actuators. Here we report on a batch fabrication paradigm suited for structuring large arrays of MWNTs into such devices in a parallel fashion. This effort is enabled by the synergistic integration of several key processes that include dielectrophoretic assembly of individual nanotubes onto nanoelectrodes, site selective shell engineering using electric breakdown with heat dissipation modulation using nanomachined heat sinks, and on-chip characterization. We anticipate this approach to enable the manufacturability of future nanoelectromechanical systems (NEMS) with sophisticated architectures.
{"title":"Batch fabrication of nanotube transducers","authors":"A. Subramanian, T. Choi, Lixin Dong, D. Poulikakos, B. Nelson","doi":"10.1109/NANO.2007.4601294","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601294","url":null,"abstract":"Relative displacements between the atomically smooth, nested shells in multiwalled carbon nanotubes (MWNTs) can be used as a robust nanoscale motion enabling mechanism for transduction applications such as bearings, switches, GHz-oscillators, shuttles, memories, syringes and actuators. Here we report on a batch fabrication paradigm suited for structuring large arrays of MWNTs into such devices in a parallel fashion. This effort is enabled by the synergistic integration of several key processes that include dielectrophoretic assembly of individual nanotubes onto nanoelectrodes, site selective shell engineering using electric breakdown with heat dissipation modulation using nanomachined heat sinks, and on-chip characterization. We anticipate this approach to enable the manufacturability of future nanoelectromechanical systems (NEMS) with sophisticated architectures.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78525996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601246
L. Fok, Y.H. Liu, W.J. Li
Repeatable manipulation and auto-assembly of nano-scale components is a critical potential for future developments in nano optics, opto-electronics, hybrid microelectromechanical (MEMS) systems, and nano-scale devices. This paper focuses on the fabrication of nano structures using single probe with force feedback. The structures that are fabricated can be used for both rapid prototyping and for replication. A description of the manipulation system is presented along with a discussion on the basic manipulation capabilities. Force feedback has been employed, the vertical contact force was determined by a force control system during manipulation.
{"title":"Assembly of nano optics by an integrated probe-based system","authors":"L. Fok, Y.H. Liu, W.J. Li","doi":"10.1109/NANO.2007.4601246","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601246","url":null,"abstract":"Repeatable manipulation and auto-assembly of nano-scale components is a critical potential for future developments in nano optics, opto-electronics, hybrid microelectromechanical (MEMS) systems, and nano-scale devices. This paper focuses on the fabrication of nano structures using single probe with force feedback. The structures that are fabricated can be used for both rapid prototyping and for replication. A description of the manipulation system is presented along with a discussion on the basic manipulation capabilities. Force feedback has been employed, the vertical contact force was determined by a force control system during manipulation.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78128657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-08-01DOI: 10.1109/NANO.2007.4601262
Chunhong Chen, F. Zhou
To make digital circuits with unreliable devices more reliable has been a big challenge, especially for today's nanoelectronic circuit design. This paper presents a gate replication architecture towards increasing the reliability of individual nano-scale digital logic gates. We focus on deriving the fundamental relationship between gate replication and reliability improvement, and report both theoretical analysis and experimental results.
{"title":"Towards reliability improvement for nanoelectronic circuits using gate replication","authors":"Chunhong Chen, F. Zhou","doi":"10.1109/NANO.2007.4601262","DOIUrl":"https://doi.org/10.1109/NANO.2007.4601262","url":null,"abstract":"To make digital circuits with unreliable devices more reliable has been a big challenge, especially for today's nanoelectronic circuit design. This paper presents a gate replication architecture towards increasing the reliability of individual nano-scale digital logic gates. We focus on deriving the fundamental relationship between gate replication and reliability improvement, and report both theoretical analysis and experimental results.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73310855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：