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Conversion of complex molecules into useful small compounds via photocatalytic decolorization using SrTiO₃ thin films 利用SrTiO₃薄膜通过光催化脱色将复杂分子转化为有用的小化合物
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-03-08 DOI: 10.1007/s10854-026-16903-y
Yogeshwaran Atheeswaran, R. Suresh, M. Aslam Manthrammel, Mohd. Shkir, Essam H. Ibrahim, Thangabalu Subramani

Industrial organic dye releases have generated serious environmental and health issues. Research on sustainable and energy-efficient water treatment systems employing semiconductor photocatalysts to turn sunlight into chemical energy to break down environmental pollutants has been conducted. We carefully created platelet-shaped thin films of strontium titanate (SrTiO₃) with a distinct triplet-phase structure. These innovative materials are designed to improve wastewater treatment efficiency, making them a potential water purification option. Diffraction peaks in the XRD pattern revealed the existence of triplet-phase patterns (SrO, TiO and SrTiO₃), confirming nanocomposites’ development. FE-SEM pictures showed three phases formed with composite formation on the surface with platelet-shaped particles, according to XRD data. SrTiO₃ composites exhibit significant UV absorption and visible transmittance in UV–Vis spectra. Additional support for SrTiO₃ nanocomposites in the films came from XPS spectra. Composites at 350, 400 and 450 °C degraded MB dye more effectively than bare ones under sunlight. This may be due to the composite’s optimised electron–hole pair recombination and charge transport. The study found that substrate temperature influences the microstructure, optical, functional, compositional, emission and electrical properties of SrTiO₃ composite films for environmental applications.

工业有机染料的释放产生了严重的环境和健康问题。利用半导体光催化剂将太阳光转化为化学能,分解环境污染物的可持续节能水处理系统的研究已经开展。我们仔细地创造了钛酸锶(SrTiO₃)的片状薄膜,具有独特的三重相结构。这些创新材料旨在提高废水处理效率,使其成为潜在的水净化选择。XRD谱图中的衍射峰显示了三相结构(SrO、TiO和SrTiO₃)的存在,证实了纳米复合材料的发育。根据XRD数据,FE-SEM图像显示,在片状颗粒表面形成了三个复合相。SrTiO₃复合材料在紫外可见光谱中具有显著的紫外吸收和可见光透过率。薄膜中SrTiO₃纳米复合材料的额外支持来自XPS光谱。复合材料在350、400和450°C下对MB染料的降解效果优于裸复合材料。这可能是由于复合材料优化了电子-空穴对复合和电荷输运。研究发现,衬底温度会影响环境应用的SrTiO₃复合薄膜的微观结构、光学、功能、组成、发射和电学性能。
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引用次数: 0
Effect of temperature on the stability of nickel sulfide reduced graphene oxide nanocomposite counter electrode in quantum dot-sensitized solar cells 温度对硫化镍还原氧化石墨烯纳米复合对电极量子点敏化太阳能电池稳定性的影响
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-03-08 DOI: 10.1007/s10854-026-16855-3
Layla Haythoor Kharboot, Abdillah Sani Mohd Najib, Tuty Asma Abu Bakar, Norhuda Hidayah Nordin, Andi Erwin Eka Putra, Ataf Ali Altaf, Nor Akmal Fadil

Quantum dot-sensitized solar cells (QDSSCs) are equipped with counter electrodes (CEs) based on reduced graphene oxide (rGO) and nickel sulfide (NiS/rGO). A hydrothermal method performed at 150 °C with variable reaction times (5, 10, and 15 h) was used to synthesize NiS/rGO CEs and evaluate their electrocatalytic activity and stability by exposing them to varying conditions at 25, 40, 60, and 80 °C for 100 h. Electrochemical performance was assessed through cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and Tafel polarization. Results showed that NiS/rGO 5 h exhibited superior electrocatalytic activity, achieving a significantly higher current density. CV results showed that NiS/rGO 5 h generated the highest current density of 112.4 mA/cm2 at 80 °C (Pt = 8.1 mA/cm2), and lower charge-transfer resistance (Rct values, 3.6 Ω cm2 at 80 °C than (Pt = 674.4 Ω cm2). The high performance was attributed to the dominance of β-NiS phase. Additionally, the nanocomposites demonstrated strong mechanical adhesion and stability under prolonged exposure to elevated temperatures. This study highlights the potential of NiS/rGO nanocomposites as cost-effective and efficient alternatives to Pt for improved QDSSC performance.

量子点敏化太阳能电池(QDSSCs)配备了基于还原氧化石墨烯(rGO)和硫化镍(NiS/rGO)的对电极(CEs)。采用水热法在150°C条件下合成了不同反应时间(5、10和15 h)的NiS/rGO ce,并通过在25、40、60和80°C条件下反应100 h来评估其电催化活性和稳定性。电化学性能通过循环伏安法(CV)、电化学阻抗谱(EIS)和Tafel极化来评估。结果表明,NiS/rGO 5 h具有优异的电催化活性,电流密度显著提高。CV结果表明,在80°C时,NiS/rGO 5 h产生的电流密度最高,为112.4 mA/cm2 (Pt = 8.1 mA/cm2),而在80°C时,电荷转移电阻(Rct值为3.6 Ω cm2)低于Pt = 674.4 Ω cm2。β-NiS相具有较高的性能。此外,纳米复合材料在长时间暴露于高温下表现出很强的机械附着力和稳定性。这项研究强调了NiS/还原氧化石墨烯纳米复合材料作为Pt的经济高效替代品的潜力,可以改善QDSSC的性能。
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引用次数: 0
Electrochemical insights of l-alanine-functionalized CdS quantum dots for supercapacitor applications l-丙氨酸功能化CdS量子点在超级电容器中的电化学应用
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-03-07 DOI: 10.1007/s10854-026-16922-9
B. Dhanalakshmi, B. Padmadevi, G. Suresh

This report elucidates fundamental insights into the optical and electrochemical performance of l-alanine-functionalized stable cadmium sulfide (CdS) quantum dots (QDs). Al-CdS QDs were efficiently synthesized via a simple, one-step wet chemical route. Powder XRD measurements revealed the cubic phase with a well-reduced crystallite size, high crystallinity, and phase purity of the synthesized material. SEM analyses showed nearly monodispersed spherical particles with a moderate porous architecture. FTIR spectra confirmed the efficient attachment of l-alanine onto the CdS surface. UV–Visible absorption spectra revealed the quantum size effect by a blue shift. The optical band gap of 3.64 eV was revealed from Tauc’s plot. PL spectra implied the presence of surface defects facilitating enhanced electrochemical activity. Pseudocapacitive activity was examined through analyses on CV and EIS measurements which were taken on a three-electrode system. The analyses revealed a hybrid charge storage behavior. The Al-CdS electrode exhibits a specific capacitance of 692 mF/g at 10 mV/s in 0.5 M Na2SO4 aqueous electrolyte. The observed hybrid charge storage behavior and surface-dominated pseudocapacitance highlight the potential of Al-CdS QDs as a model system for fundamental electrochemical studies and future composite electrode design.

本报告阐明了l-丙氨酸功能化稳定硫化镉量子点的光学和电化学性能的基本见解。采用简单的一步湿法合成了Al-CdS量子点。粉末XRD测试表明,合成材料的立方相具有良好的晶粒尺寸,高结晶度和相纯度。扫描电镜分析显示,微球颗粒近似单分散,具有中等孔隙结构。FTIR光谱证实了l-丙氨酸在CdS表面的有效附着。紫外-可见吸收光谱通过蓝移揭示了量子尺寸效应。Tauc图显示了3.64 eV的光学带隙。PL光谱表明表面缺陷的存在有助于增强电化学活性。假电容活度通过分析在三电极系统上进行的CV和EIS测量来检测。分析揭示了一种混合电荷存储行为。在0.5 M Na2SO4水溶液中,Al-CdS电极在10 mV/s下的比电容为692 mF/g。观察到的混合电荷存储行为和表面主导的伪电容突出了Al-CdS量子点作为基础电化学研究和未来复合电极设计的模型系统的潜力。
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引用次数: 0
Repeatability of structural and ferroelectric properties of PLZT thin films prepared using three distinct sol–gel based solution routes 三种不同溶胶-凝胶法制备的PLZT薄膜结构和铁电性能的可重复性
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-03-07 DOI: 10.1007/s10854-026-16846-4
Sneha Kothapally, Sushma Kotru

Sol–gel, a chemical solution deposition method, is widely used for preparing advanced materials due to its low fabrication cost, stoichiometric control, and compatibility with large-area thin film fabrication without the need for high vacuum environment. One such material is lead lanthanum zirconate titanate (PLZT) which is ferroelectric in nature, but its film properties are highly sensitive to the preparation method of the precursor solution (Sol). Achieving consistent and repeatable film properties remains a significant challenge for device applications. In this study, three distinct sol–gel based solution routes were employed to prepare PLZT “Sols”: (i) open beaker method (Sol1), (ii) reflux method (Sol2), and (iii) reflux with distillation method (Sol3). From each “Sol,” a set of three films were prepared under identical conditions (nine films total) and evaluated for structural and ferroelectric properties to assess the impact of “Sol” preparation method and the repeatability within each set. One representative sample from each set was further selected for detailed analysis of surface morphology and elemental composition. The results demonstrate that “Sol” chemistry has a pronounced impact on film quality and repeatability. “Sol3,” prepared using the reflux with distillation method provided a more controlled chemical environment, yielding a uniform and stable solution thereby resulting in films with improved crystallinity, uniform surface morphology, and stoichiometry closest to the target composition. Moreover, Sol3 films exhibited enhanced ferroelectric behavior, including the highest saturation (~ 50 µC/cm2) and remnant (~ 15 µC/cm2) polarizations, along with a low leakage current density ~ 10−9 A/cm2. “Sol3” proved to be a more reliable route for achieving better properties and repeatable results compared to “Sol1” and “Sol2.”

溶胶-凝胶法是一种化学溶液沉积法,由于其制备成本低、化学计量控制好、不需要高真空环境也能大面积制备薄膜等优点,被广泛应用于先进材料的制备。其中一种材料是锆钛酸铅镧(PLZT),其本质上是铁电的,但其薄膜性能对前驱体溶液(Sol)的制备方法高度敏感。实现一致和可重复的薄膜性能仍然是器件应用的重大挑战。在本研究中,采用三种不同的溶胶-凝胶基溶液途径制备PLZT“溶胶”:(i)开烧杯法(Sol1), (ii)回流法(Sol2), (iii)蒸馏回流法(Sol3)。从每个“溶胶”中,在相同的条件下制备了一组三层薄膜(共九层),并评估了结构和铁电性能,以评估“溶胶”制备方法的影响和每组内的可重复性。从每组中选择一个有代表性的样品进一步进行表面形貌和元素组成的详细分析。结果表明,“溶胶”化学对薄膜质量和可重复性有显著影响。使用回流蒸馏法制备的“Sol3”提供了一个更可控的化学环境,产生均匀和稳定的溶液,从而产生具有改进的结晶度、均匀的表面形态和最接近目标成分的化学计量学的薄膜。此外,Sol3薄膜表现出增强的铁电行为,包括最高的饱和极化(~ 50µC/cm2)和残余极化(~ 15µC/cm2),以及低泄漏电流密度(~ 10−9 a /cm2)。与“Sol1”和“Sol2”相比,“Sol3”被证明是获得更好性能和可重复结果的更可靠的途径。
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引用次数: 0
Structural and photoluminescence studies of Eu3+-doped Bi6Ti3WO18 phosphors for solid-state lighting and optical thermometry Eu3+掺杂Bi6Ti3WO18固体照明和光学测温荧光粉的结构和光致发光研究
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-03-07 DOI: 10.1007/s10854-026-16679-1
Aarti, A. S. Rao, Shailesh Narain Sharma

Eu3+-doped Bi6Ti3WO18 (BTW) phosphors were synthesized via solid-state reaction route and systematically investigated to understand their structural and photoluminescent properties, with relevance to solid-state lighting and optical thermometry. X-ray diffraction (XRD) indicated the formation of a single-phase orthorhombic Aurivillius structure with space group A21am. Scanning electron microscopy (SEM) revealed agglomerated surface morphology, while the Fourier transform infrared (FT-IR) analysis confirmed the presence of characteristic metal–oxygen vibrational modes. The optical bandgap was estimated from UV–Vis diffuse reflectance spectra (DRS). Under 466-nm excitation, the Eu3+-doped BTW phosphors exhibited intense red emission centered at 615 nm, arising from the dominant 5D0 → 7F2 transition, along with CIE coordinates (0.643, 0.352), very high color purity and a low correlated color temperature. Time-resolved photoluminescence (TRPL) exhibited bi-exponential behavior, and temperature-dependent PL (TDPL) measurements demonstrated good thermal stability with 68.7% emission retained at 443 K with an activation energy of 0.267 eV. An FIR-based ratiometric thermometry yielded a maximum relative sensitivity of 1.16% K−1. Overall, the obtained results demonstrate favorable chromaticity, good thermal stability, and effective temperature-sensing behavior in Eu3+-doped Bi6Ti3WO18 phosphors.

通过固相反应途径合成了Eu3+掺杂Bi6Ti3WO18 (BTW)荧光粉,并对其结构和光致发光性能进行了系统研究,并与固态照明和光学测温相关。x射线衍射(XRD)结果表明,形成了具有空间群A21am的单相正交Aurivillius结构。扫描电子显微镜(SEM)显示了团聚表面形貌,傅里叶变换红外(FT-IR)分析证实了特征金属-氧振动模式的存在。利用紫外-可见漫反射光谱(DRS)估计了光学带隙。在466 nm激发下,Eu3+掺杂的BTW荧光粉表现出以615 nm为中心的强烈红色发射,主要由5D0→7F2跃迁引起,CIE坐标为0.643,0.352,色纯度非常高,相关色温很低。时间分辨光致发光(TRPL)表现出双指数行为,温度依赖性光致发光(TDPL)测量显示出良好的热稳定性,在443 K下保留68.7%的发射,活化能为0.267 eV。基于红外光谱的比例测温法的最大相对灵敏度为1.16% K−1。总体而言,所得结果表明,Eu3+掺杂Bi6Ti3WO18荧光粉具有良好的色度、良好的热稳定性和有效的感温行为。
{"title":"Structural and photoluminescence studies of Eu3+-doped Bi6Ti3WO18 phosphors for solid-state lighting and optical thermometry","authors":"Aarti,&nbsp;A. S. Rao,&nbsp;Shailesh Narain Sharma","doi":"10.1007/s10854-026-16679-1","DOIUrl":"10.1007/s10854-026-16679-1","url":null,"abstract":"<div><p>Eu<sup>3+</sup>-doped Bi<sub>6</sub>Ti<sub>3</sub>WO<sub>18</sub> (BTW) phosphors were synthesized via solid-state reaction route and systematically investigated to understand their structural and photoluminescent properties, with relevance to solid-state lighting and optical thermometry. X-ray diffraction (XRD) indicated the formation of a single-phase orthorhombic Aurivillius structure with space group A21am. Scanning electron microscopy (SEM) revealed agglomerated surface morphology, while the Fourier transform infrared (FT-IR) analysis confirmed the presence of characteristic metal–oxygen vibrational modes. The optical bandgap was estimated from UV–Vis diffuse reflectance spectra (DRS). Under 466-nm excitation, the Eu<sup>3+</sup>-doped BTW phosphors exhibited intense red emission centered at 615 nm, arising from the dominant <sup>5</sup>D<sub>0</sub> → <sup>7</sup>F<sub>2</sub> transition, along with CIE coordinates (0.643, 0.352), very high color purity and a low correlated color temperature. Time-resolved photoluminescence (TRPL) exhibited bi-exponential behavior, and temperature-dependent PL (TDPL) measurements demonstrated good thermal stability with 68.7% emission retained at 443 K with an activation energy of 0.267 eV. An FIR-based ratiometric thermometry yielded a maximum relative sensitivity of 1.16% K<sup>−1</sup>. Overall, the obtained results demonstrate favorable chromaticity, good thermal stability, and effective temperature-sensing behavior in Eu<sup>3+</sup>-doped Bi<sub>6</sub>Ti<sub>3</sub>WO<sub>18</sub> phosphors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 7","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147441185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of hydrothermal deposition time on the structural, optical, and photoelectrical properties of Cu2NiSnS4 powder 水热沉积时间对Cu2NiSnS4粉末结构、光学和光电性能的影响
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-03-07 DOI: 10.1007/s10854-026-16883-z
Sonali Pingale, Yogesh Hase, Rahila Shaikh, Sandesh Jadkar, Rohidas Kale

Cu2NiSnS4 (CNTS) powder was successfully synthesized via a simple and cost-effective hydrothermal method. The influence of deposition time on their structural, morphological, optical, and electrical characteristics was comprehensively investigated. X-ray diffraction and Raman spectroscopy analyses confirmed that extended hydrothermal deposition enhances crystallinity and phase purity, eliminating secondary phases. The optical band gap of the CNTS varied with deposition time, ranging from 1.26 to 1.96 eV, reflecting changes in microstructural order and composition. Surface morphology and elemental analysis using SEM and EDX revealed that optimized stoichiometry was achieved at longer reaction durations, indicating that hydrothermal time critically affects uniformity and composition. Photoelectrical studies demonstrated that the CNTS powder prepared for 24 h (CNTS-24) exhibited the highest photocurrent and electrical conductivity, signifying improved charge transport and light-harvesting efficiency. Overall, the results highlight that the hydrothermal reaction time is a key parameter governing the crystallinity, stoichiometry, and photoresponse behavior of CNTS, establishing 24 h as the optimal duration for efficient solar cell applications.

采用简单、经济的水热方法成功合成了Cu2NiSnS4 (CNTS)粉末。研究了沉积时间对其结构、形态、光学和电学特性的影响。x射线衍射和拉曼光谱分析证实,延长热液沉积提高了结晶度和相纯度,消除了二次相。CNTS的光学带隙随沉积时间的变化而变化,在1.26 ~ 1.96 eV之间,反映了微观结构顺序和组成的变化。利用SEM和EDX进行的表面形貌和元素分析表明,在较长的反应时间内,化学计量学得到了优化,这表明水热时间对均匀性和组成有重要影响。光电研究表明,制备24 h的CNTS粉末(CNTS-24)具有最高的光电流和电导率,这表明电荷传输和光收集效率得到了提高。总之,研究结果强调水热反应时间是控制CNTS结晶度、化学计量和光响应行为的关键参数,确定24小时是高效太阳能电池应用的最佳持续时间。
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引用次数: 0
Non-monotonic low-temperature photocurrent in VPD-PbSe photodetectors VPD-PbSe光电探测器的非单调低温光电流
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-03-07 DOI: 10.1007/s10854-026-16862-4
Kerun Chen, Xu Gao, Dong Yang, Qi Yang, Chongqian Leng, Dahua Zhou, Deping Huang, Changbin Nie, Jijun Qiu, Jun Shen

Due to the suppression of band-edge Auger recombination, lead selenide (PbSe) is a critical material for uncooled infrared detection at room temperature. However, the optoelectronic performance of PbSe detectors exhibits significant temperature sensitivity, often deviating from room-temperature characteristics when operated in cryogenic environments. In this study, we fabricated PbSe photodetectors via vapor phase deposition (VPD) with both unpatterned and patterned architectures to evaluate their compatibility with standard microfabrication processes and their intrinsic temperature-dependent behaviors. Unpatterned devices on sapphire substrates demonstrate superior performance, achieving responsivity up to 2.52 A/W and specific detectivity of 1.52 × 1010 Jones at 2700 nm. In contrast, patterned devices on Si/SiO2 substrates suffered significant performance degradation due to process-induced surface defects. Temperature-dependent measurements on unpatterned devices reveal a non-monotonic photocurrent trend, with a peak in the 150–200 K range. This phenomenon is attributed to the synergistic competition among thermally activated transport, lattice scattering, and phonon-assisted indirect Auger recombination. These findings highlight the critical role of device architecture and processing conditions in preserving the intrinsic properties of VPD-grown PbSe and provide guidance for optimizing the performance of cryogenic infrared detection systems.

硒化铅(PbSe)由于能抑制带边俄歇复合,是室温下非冷却红外探测的关键材料。然而,PbSe探测器的光电性能表现出明显的温度敏感性,在低温环境中工作时往往偏离室温特性。在这项研究中,我们通过气相沉积(VPD)制备了PbSe光电探测器,具有非图像化和图像化两种结构,以评估它们与标准微加工工艺的兼容性以及它们固有的温度依赖行为。蓝宝石衬底上的无图案器件表现出优异的性能,在2700 nm处实现高达2.52 A/W的响应率和1.52 × 1010 Jones的比探测率。相比之下,由于工艺引起的表面缺陷,Si/SiO2衬底上的图图化器件的性能明显下降。对无图案器件的温度相关测量揭示了非单调光电流趋势,其峰值在150-200 K范围内。这种现象归因于热激活输运、晶格散射和声子辅助的间接俄歇复合之间的协同竞争。这些发现强调了器件结构和加工条件在保持vpd生长的PbSe固有特性方面的关键作用,并为优化低温红外探测系统的性能提供了指导。
{"title":"Non-monotonic low-temperature photocurrent in VPD-PbSe photodetectors","authors":"Kerun Chen,&nbsp;Xu Gao,&nbsp;Dong Yang,&nbsp;Qi Yang,&nbsp;Chongqian Leng,&nbsp;Dahua Zhou,&nbsp;Deping Huang,&nbsp;Changbin Nie,&nbsp;Jijun Qiu,&nbsp;Jun Shen","doi":"10.1007/s10854-026-16862-4","DOIUrl":"10.1007/s10854-026-16862-4","url":null,"abstract":"<div><p>Due to the suppression of band-edge Auger recombination, lead selenide (PbSe) is a critical material for uncooled infrared detection at room temperature. However, the optoelectronic performance of PbSe detectors exhibits significant temperature sensitivity, often deviating from room-temperature characteristics when operated in cryogenic environments. In this study, we fabricated PbSe photodetectors via vapor phase deposition (VPD) with both unpatterned and patterned architectures to evaluate their compatibility with standard microfabrication processes and their intrinsic temperature-dependent behaviors. Unpatterned devices on sapphire substrates demonstrate superior performance, achieving responsivity up to 2.52 A/W and specific detectivity of 1.52 × 10<sup>10</sup> Jones at 2700 nm. In contrast, patterned devices on Si/SiO<sub>2</sub> substrates suffered significant performance degradation due to process-induced surface defects. Temperature-dependent measurements on unpatterned devices reveal a non-monotonic photocurrent trend, with a peak in the 150–200 K range. This phenomenon is attributed to the synergistic competition among thermally activated transport, lattice scattering, and phonon-assisted indirect Auger recombination. These findings highlight the critical role of device architecture and processing conditions in preserving the intrinsic properties of VPD-grown PbSe and provide guidance for optimizing the performance of cryogenic infrared detection systems.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 7","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147441036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Correction: Growth, impedance analysis, and dielectric relaxation of all-inorganic lead-free cesium bismuth chloride (Cs3Bi2Cl9) single crystal for energy storage application 校正:用于储能应用的全无机无铅氯化铯铋(Cs3Bi2Cl9)单晶的生长、阻抗分析和介电弛豫
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-03-07 DOI: 10.1007/s10854-026-16890-0
Bharti Chandrakar, Topeswar Meher,  Hitendra, Anil Kumar Sharma, Pawan Kumar, Sudhir Kumar, H. P. Bhaskar, Vineet K. Singh, Dhirendra K. Chaudhary, Shiv P. Patel
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引用次数: 0
Sintering-driven structural, electrical, ferroelectric, and photoluminescence behaviors of KNN-based ceramics 烧结驱动knn基陶瓷的结构、电学、铁电和光致发光行为
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-03-06 DOI: 10.1007/s10854-026-16919-4
Chiranjit Chaliha, Samananda Haobam, Parveen Kumar, Mamata Maisnam

K0.47Na0.47Li0.06NbO3 + (0.4 wt%) Bi0.5Na0.5ZrO3 (KNLN + 0.4 wt% BNZ) lead-free ceramics were investigated to understand the influence of sintering temperature on their structural, electrical, ferroelectric, and optical performance. A stable morphotropic phase boundary was observed over a wide sintering range, accompanied by systematic grain growth and enhanced crystallinity. Electrical and dielectric analyses revealed non-Debye relaxation with a broad distribution of relaxation times, indicating complex charge-transport dynamics. The ceramic sintered at 1050 °C exhibited optimal ferroelectric behavior with enhanced polarization and a moderate coercive field, while leakage conduction was dominated by space-charge-limited transport. Photoluminescence studies showed a sintering-induced transition from shallow to deep defect emission, enabling tunable near-infrared luminescence. These results demonstrate that controlled sintering effectively tailors the multifunctional properties of KNLN + 0.4 wt% BNZ ceramics, highlighting their potential for lead-free ferroelectric and optoelectronic applications.

研究了K0.47Na0.47Li0.06NbO3 + (0.4 wt%) Bi0.5Na0.5ZrO3 (KNLN + 0.4 wt% BNZ)无铅陶瓷,了解了烧结温度对其结构、电性能、铁电性能和光学性能的影响。在较宽的烧结范围内,观察到稳定的亲晶相边界,伴随着系统的晶粒生长和结晶度的增强。电学和介电分析显示非德拜弛豫具有广泛的弛豫时间分布,表明复杂的电荷传输动力学。在1050℃下烧结的陶瓷表现出最佳的铁电行为,具有较强的极化和中等的矫顽力场,而漏电传导以空间电荷限制输运为主。光致发光研究表明,从浅缺陷发射到深缺陷发射的烧结诱导转变,实现了可调谐的近红外发光。这些结果表明,控制烧结有效地调整了KNLN + 0.4 wt% BNZ陶瓷的多功能特性,突出了它们在无铅铁电和光电子应用方面的潜力。
{"title":"Sintering-driven structural, electrical, ferroelectric, and photoluminescence behaviors of KNN-based ceramics","authors":"Chiranjit Chaliha,&nbsp;Samananda Haobam,&nbsp;Parveen Kumar,&nbsp;Mamata Maisnam","doi":"10.1007/s10854-026-16919-4","DOIUrl":"10.1007/s10854-026-16919-4","url":null,"abstract":"<div><p>K<sub>0.47</sub>Na<sub>0.47</sub>Li<sub>0.06</sub>NbO<sub>3</sub> + (0.4 wt%) Bi<sub>0.5</sub>Na<sub>0.5</sub>ZrO<sub>3</sub> (KNLN + 0.4 wt% BNZ) lead-free ceramics were investigated to understand the influence of sintering temperature on their structural, electrical, ferroelectric, and optical performance. A stable morphotropic phase boundary was observed over a wide sintering range, accompanied by systematic grain growth and enhanced crystallinity. Electrical and dielectric analyses revealed non-Debye relaxation with a broad distribution of relaxation times, indicating complex charge-transport dynamics. The ceramic sintered at 1050 °C exhibited optimal ferroelectric behavior with enhanced polarization and a moderate coercive field, while leakage conduction was dominated by space-charge-limited transport. Photoluminescence studies showed a sintering-induced transition from shallow to deep defect emission, enabling tunable near-infrared luminescence. These results demonstrate that controlled sintering effectively tailors the multifunctional properties of KNLN + 0.4 wt% BNZ ceramics, highlighting their potential for lead-free ferroelectric and optoelectronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 7","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147362843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CNT and SiO2 nanomaterial-based 135ºC thermostable fractional capacitors (α > 0.3) for radiation detection in nuclear power plant 基于碳纳米管和SiO2纳米材料的135ºC耐热分式电容器(α > 0.3),用于核电站辐射检测
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-03-06 DOI: 10.1007/s10854-026-16872-2
Arya Suman Pattnaik, Sumit Swain, Madhab Chandra Tripathy

This study investigates the design, fabrication, and characterization of two-terminal fractional capacitors (FCs) with orders exceeding 0.35 and exceptional thermal stability. To achieve this, a nanocomposite of carbon nanotubes and AD-SiO₂ nanoparticles dispersed in epoxy is used as a dielectric. The devices exhibit fractional orders (0.3 < α < 0.85) and maintain stable fractance from − 15 °C to 136 °C, far exceeding the thermal limits of CNT-only FCs (− 15 °C to 40 °C) and those of capacitors reported in the GM-tube literature. This FC (α = 0.85, ({C}_{alpha }=84text{hspace{0.17em}}mu {text{Fs}}^{1-alpha })) showed full-range impedance stability, marking it as the first high-temperature FC for radiation instrumentation. Modeling and experiments confirm strong correlations between material composition and electrical behavior. In addition, this FC, integrated into a GM preamplifier yields a stable cutoff frequency ({omega }_{c}=(1/R{C}_{alpha }{)}^{1/alpha }) from 25 to 125 °C, achieving noise suppression unattainable with conventional RC filters. Further, it introduces the first fractional-order GM-tube model linked to ion-drift memory through Mittag–Leffler dynamics. By unifying high-temperature FO devices, a physically grounded GM model, and thermally robust FO filtering, this study establishes FCs as reliable components for nuclear and high-temperature applications.

本研究探讨了阶数超过0.35且具有优异热稳定性的双端分数电容(fc)的设计、制造和表征。为了实现这一点,分散在环氧树脂中的碳纳米管和ad - sio2纳米颗粒的纳米复合材料被用作电介质。该器件表现出分数阶(0.3 &lt; α &lt; 0.85),并在- 15°C至136°C范围内保持稳定的分数,远远超过了纯碳纳米管fc(- 15°C至40°C)和gm管文献中报道的电容器的热极限。该FC (α = 0.85, ({C}_{alpha }=84text{hspace{0.17em}}mu {text{Fs}}^{1-alpha }))表现出全范围阻抗稳定性,是辐射仪器的第一种高温FC。模型和实验证实了材料成分和电行为之间的强相关性。此外,该FC集成到GM前置放大器中,产生稳定的截止频率({omega }_{c}=(1/R{C}_{alpha }{)}^{1/alpha }),从25到125°C,实现传统RC滤波器无法实现的噪声抑制。进一步介绍了通过Mittag-Leffler动力学与离子漂移存储器相关联的第一个分数阶gm管模型。通过统一高温FO装置、物理接地GM模型和热鲁棒FO滤波,本研究确立了fc作为核和高温应用的可靠组件。
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Journal of Materials Science: Materials in Electronics
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