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Efficient microwave absorption with ultra-thin thickness through one-step direct calcination of pellicle of Castanea mollissima Blume 一步法直接煅烧板栗皮膜的超薄高效微波吸收研究
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-17 DOI: 10.1007/s10854-024-14204-w
Yangyang Liu, Jiaojiao Yuan, Aming Xie, Jing He

Currently, biomass-based absorbers have drawn much attention as microwave absorption materials due to their intrinsic low-weight, low cost, green, and easy availability. However, additional activation methodologies are often employed, significantly elevating cost. In order to overcome this drawback, we use a common biowaste of the inner skin of Chinese chestnut, i.e., the pellicle, often directly discarded in the candied chestnut industry, as the raw material to synthesize a very low-cost biomass-based absorbers (CMs) through one-step facile pyrolysis without further activation or modification. The results show that these materials can exhibit excellent microwave absorption capabilities if the activation temperature is carefully chosen. Calcinated at 700 °C, CM-700 shows strong microwave absorption performance, and the maximum reflection loss is as strong as − 56.73 dB. Moreover, the effective microwave absorption bandwidth of CM-800 reaches 5.09 GHz (ranging from 12.91 to 18.00 Hz) under the ultra-thin thickness of just 1.6 mm. A plausible energy-dissipation mechanism of the pellicle-based materials is proposed.

目前,生物质基吸收材料因其重量轻、成本低、绿色环保、易获取等优点而受到广泛关注。然而,通常会采用额外的激活方法,这大大提高了成本。为了克服这一缺点,我们利用板栗内皮的一种常见的生物废弃物,即板栗糖化工业中经常直接丢弃的板栗皮作为原料,通过一步快速热解合成了一种非常低成本的生物质基吸收剂(CMs),无需进一步活化或改性。结果表明,只要选择合适的活化温度,这些材料就能表现出优异的微波吸收性能。经700℃煅烧后,CM-700具有较强的微波吸收性能,最大反射损耗为- 56.73 dB。CM-800在超薄厚度仅为1.6 mm的情况下,有效微波吸收带宽达到5.09 GHz (12.91 ~ 18.00 Hz)。提出了一种合理的膜基材料能量耗散机制。
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引用次数: 0
Free-standing Ni–Fe-doped laser-induced-graphene as binder-free electrodes for high-areal-capacitance symmetric microsupercapacitor 独立掺镍铁激光诱导石墨烯作为高面积电容对称微超级电容器的无粘结剂电极
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-17 DOI: 10.1007/s10854-025-14214-2
Xiaofeng Liu, Yongxia Zhao, Lei Ge, Xinzhi Sun

Laser-induced graphene (LIG) has garnered significant attention for its cost-effectiveness and high efficiency in fabricating flexible micro-energy storage devices. For the sake of enhancing the electrochemical performance of graphene electrodes, transition metal-doped graphene is a feasible strategy. Carbon cloth (CC) has good electrical conductivity, and polyethersulfone (PES) is a kind of polymer containing sulfur. In this study, Ni–Fe/CC@PES-LIG electrode materials have been prepared successfully via scribing the Ni–Fe/CC@PES films under CO2 atmosphere by laser direct writing technology. The addition of carbon cloth not only improves the electric conductivity of as-prepared samples, but also provides a self-supporting fluid collector, and the synergistic effect with the transition metal greatly improves the electrochemical performance of the electrodes. An integrated Ni–Fe/CC@PES-LIG-10W electrode material exhibited high areal specific capacitance of 580 mF cm−2 at 1 mA cm−2, which enhanced about 20 times approximately after carbon cloth acted as current collect. Symmetric microsupercapacitors (SMSCs) were established using two identical integrated Ni–Fe/CC@PES-LIG electrodes because they can work in both the positive and negative potential windows. The fabricated SMSCs showed a wide potential window of 1.7 V and high areal specific capacitance of 95 mF cm−2 at 1 mA cm−2 with 93% specific capacitance retention after 6000 cycles. This study provides a simple and effective strategy for the further application of the laser direct writing technology in the field of electronic products.

激光诱导石墨烯(LIG)以其成本效益和高效率在制造柔性微储能器件方面受到广泛关注。为了提高石墨烯电极的电化学性能,过渡金属掺杂石墨烯是一种可行的策略。炭布(CC)具有良好的导电性,聚醚砜(PES)是一种含硫聚合物。本研究采用激光直写技术,在CO2气氛下对Ni-Fe /CC@PES薄膜进行刻划,成功制备了Ni-Fe /CC@PES-LIG电极材料。碳布的加入不仅提高了制备样品的电导率,还提供了一个自支撑的流体收集器,并且与过渡金属的协同作用大大提高了电极的电化学性能。在1 mA cm - 2下,Ni-Fe /CC@PES-LIG-10W电极材料的面比电容高达580 mF cm - 2,碳布作为电流集电后,其面比电容提高了约20倍。对称微型超级电容器(SMSCs)采用两个相同的集成Ni-Fe /CC@PES-LIG电极,因为它们可以在正负电位窗口中工作。制备的SMSCs具有1.7 V的宽电位窗口,在1 mA cm - 2时具有95 mF cm - 2的高面积比电容,在6000次循环后具有93%的比电容保持率。本研究为激光直写技术在电子产品领域的进一步应用提供了一种简单有效的策略。
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引用次数: 0
Fabrication and characterization of ferroelectric junctionless GOI and GeSnOI transistors for low-power applications 用于低功耗应用的铁电无结GOI和GeSnOI晶体管的制造和表征
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-16 DOI: 10.1007/s10854-024-14197-6
Yuhui Ren, Jiahan Ke, Hongxiao Lin, Xuewei Zhao, Zhenzhen Kong, Renrong Liang, Jun Xu, Bin Lu, Yuanhao Miao, Henry H. Radamson

Ge and GeSn materials have garnered significant attention due to their high carrier mobility and tunable band structure, making them promising candidates for low-power electronic applications. In this work, a novel ferroelectric junctionless GOI and GeSnOI transistors is presented and characterized. The initial Ge layer or Ge/GeSn structure was grown on Si substrates and later bonded and back-etched. The final layer of Ge and GeSn in (GOI and GeSnOI) with thickness of 50 nm was obtained by wet etching using a spinner tool while etchant agent was dropped carefully to etch uniformly over the Si wafer. Ge preamorphization implantation (PAI) and rapid thermal annealing (RTA) processes were employed to form the NiGe/p-Ge contact, resulting in a contact resistance as low as 0.55 × 10–8 Ω-cm2. In addition, the formed transistors show excellent characteristics. Notably, extracted mobilities of GOI and GeSnOI transistor are in range of 200–400 cm2/V·s and 500–600 cm2/V·s, respectively. Subthreshold swing (SS) of the ferroelectric transistors on GOI and Ge0.92Sn0.08OI substrates was measured to be 37.7 mV/dec and 43.7 mV/dec, respectively. Our work demonstrates a novel and reliable process of Ge-based junctionless transistors for future low-power consumption logic circuits.

Ge和GeSn材料由于其高载流子迁移率和可调谐的带结构而引起了极大的关注,使其成为低功耗电子应用的有希望的候选者。在这项工作中,提出并表征了一种新的铁电无结GOI和GeSnOI晶体管。最初的Ge层或Ge/GeSn结构在Si衬底上生长,然后进行键合和背蚀刻。用旋转工具湿法刻蚀(GOI和GeSnOI)得到了厚度为50 nm的Ge和GeSn最终层,同时小心地滴入蚀刻剂,使其均匀地蚀刻在硅片上。采用Ge预非晶化注入(PAI)和快速热退火(RTA)工艺形成NiGe/p-Ge接触,接触电阻低至0.55 × 10-8 Ω-cm2。此外,所形成的晶体管具有优异的性能。值得注意的是,GOI和GeSnOI晶体管的提取迁移率分别在200-400 cm2/V·s和500-600 cm2/V·s之间。在GOI和Ge0.92Sn0.08OI衬底上测量的铁电晶体管的亚阈值摆幅(SS)分别为37.7 mV/dec和43.7 mV/dec。我们的工作为未来的低功耗逻辑电路展示了一种新颖可靠的基于ge的无结晶体管工艺。
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引用次数: 0
Role of electronic structure and order of bimetal nanoparticles coating in enhanced field emission response of vertically grown CNTs 双金属纳米粒子包覆层的电子结构和顺序在增强垂直生长CNTs场发射响应中的作用
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-16 DOI: 10.1007/s10854-025-14230-2
Shubham Saini, Santanu Ghosh, Pankaj Srivastava

The present study reports the synthesis of vertically aligned carbon nanotubes on a Si substrate using the thermal CVD technique, followed by the deposition of bimetals (Cu and Zn) via the thermal evaporation technique on the as-deposited CNTs. The structural properties, surface morphology, elemental composition, and electronic structure were studied using various characterization techniques. The J-E measurements carried out on all the samples revealed that the Cu–Zn–CNTs report a high current density of 9.94 mA/cm2 compared to pristine CNTs with 4.01 mA/cm2. A thorough study reveals the importance of the electronic structure in varying the current density. Along with the changes in the basic field emission parameters as work function reduction and increase in the field enhancement factor, the electron affinity of individual metal surfaces and their order of coating play a very important role in enhancing the current density for field emission applications.

本研究报道了利用热CVD技术在Si衬底上合成垂直排列的碳纳米管,然后通过热蒸发技术在沉积的碳纳米管上沉积双金属(Cu和Zn)。利用各种表征技术研究了其结构性能、表面形貌、元素组成和电子结构。对所有样品进行的J-E测量显示,Cu-Zn-CNTs报告的电流密度高,为9.94 mA/cm2,而原始CNTs为4.01 mA/cm2。深入的研究揭示了电子结构对电流密度变化的重要性。随着基本场发射参数的变化,如功函数的减小和场增强因子的增加,单个金属表面的电子亲和力及其涂层顺序对提高场发射应用中的电流密度起着非常重要的作用。
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引用次数: 0
Synthesis, growth, and characterization of natural dye-doped hexamethylenetetramine p-nitrophenol monohydrate single crystals for nonlinear optical applications 用于非线性光学应用的天然染料掺杂六亚甲基四胺对硝基苯酚单晶的合成、生长和表征
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-16 DOI: 10.1007/s10854-025-14212-4
K. Divya, A. Alex Arunmozhi, Sandeep Kumar Yadav, T. C. Sabari Girisun, R. Jerald Vijay, A. Leo Rajesh

Integrating natural dyes into crystal structures represents an innovative frontier in materials science. This research examines the transformative effects of incorporating natural dye extracted from Cynodon dactylon (CD) into Hexamethylenetetramine p-nitrophenol monohydrate (HMP) single crystals. Single crystal X-ray diffraction analysis confirmed that both crystals crystallize in a triclinic system with a P1 space group. Hirshfeld surface analysis revealed stronger intermolecular interactions in the CD-HMP crystals. UV–Visible studies indicated a cut-off wavelength of 389 nm and transmittance of ~ 76% for CD-HMP crystals, compared to ~ 72% transmittance with a cut-off wavelength of 398 nm for undoped HMP. Photoluminescence studies revealed an emission peak at 577 nm for CD-HMP. FTIR spectroscopy and CHN analysis confirmed the presence of functional groups and the dye-crystal interaction in the crystal lattice. Dielectric studies assessed the electrical properties and thermal analysis revealed a decomposition temperature of 134 °C for CD-HMP, compared to 119 °C for HMP. Mechanical studies indicated that both are categorized as soft materials, with the work hardening coefficients of 1.74 and 1.71 for HMP and CD-HMP, respectively. The second harmonic generation (SHG) efficiency for CD-HMP was 1.15 times higher than that of undoped HMP, with a laser damage threshold of 2.29 GW/cm2 for CD-HMP. Z-scan measurements demonstrated a third-order nonlinear absorption coefficient (β) of (0.57times {10}^{-10} m/W) for CD-HMP crystals, along with effective optical limiting at (3.78times {10}^{12} W/{m}^{2}). This synergistic enhancement of optical, thermal, mechanical, and nonlinear characteristics positions CD dye-doped HMP crystals as promising candidates for advanced nonlinear optical devices, with potential applications in optical communication and laser technology.

将天然染料整合到晶体结构中代表了材料科学的创新前沿。本研究考察了将从巨蟹(CD)中提取的天然染料掺入六亚甲基四胺对硝基苯酚一水单晶(HMP)中的转化效果。单晶x射线衍射分析证实,两种晶体均在具有P1空间群的三斜体系中结晶。Hirshfeld表面分析显示CD-HMP晶体中的分子间相互作用更强。紫外-可见光谱研究表明,其截止波长为389 nm,透过率为76% for CD-HMP crystals, compared to ~ 72% transmittance with a cut-off wavelength of 398 nm for undoped HMP. Photoluminescence studies revealed an emission peak at 577 nm for CD-HMP. FTIR spectroscopy and CHN analysis confirmed the presence of functional groups and the dye-crystal interaction in the crystal lattice. Dielectric studies assessed the electrical properties and thermal analysis revealed a decomposition temperature of 134 °C for CD-HMP, compared to 119 °C for HMP. Mechanical studies indicated that both are categorized as soft materials, with the work hardening coefficients of 1.74 and 1.71 for HMP and CD-HMP, respectively. The second harmonic generation (SHG) efficiency for CD-HMP was 1.15 times higher than that of undoped HMP, with a laser damage threshold of 2.29 GW/cm2 for CD-HMP. Z-scan measurements demonstrated a third-order nonlinear absorption coefficient (β) of (0.57times {10}^{-10} m/W) for CD-HMP crystals, along with effective optical limiting at (3.78times {10}^{12} W/{m}^{2}). This synergistic enhancement of optical, thermal, mechanical, and nonlinear characteristics positions CD dye-doped HMP crystals as promising candidates for advanced nonlinear optical devices, with potential applications in optical communication and laser technology.
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引用次数: 0
Impact of Pr3+ on structural, electrical and magnetic properties of Mg–Zn nanoferrites Pr3+对Mg-Zn纳米铁素体结构、电学和磁性能的影响
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-16 DOI: 10.1007/s10854-024-14179-8
V. Dinesh, K. S. Kiran, E. Melagiriyappa

In the present investigation, we report the impact of Praseodymium (Pr3+) substitution on structural, electrical and magnetic properties of nanosized Mg1−xZnxPryFe2−yO4 (0 ≤ x ≤ 1.0 in steps of 0.2; y = 0.0, 0.1) ferrites prepared by novel solution combustion method. X-ray diffraction (XRD) patterns analysis confirmed the single-phase cubic structure of synthesized nanoferrites. The lattice parameter increased from 0.82344 to 0.84420 nm with increase in Zn2+ ion content. The average crystallite sizes were in the range of 22.144–44.24 nm. Two prominent absorption bands in the infrared spectra lies in wavenumber range 526–518 cm−1 and 440–434 cm−1 assigned due to stretched vibrations were designate the tetrahedral sites and octahedral sites, respectively. SEM micrographs explore the grain sizes in the range 82.86–183.5 nm. Furthermore, the DC conductivity studies by two probe method from 300 to 800 K explore that critical temperature decreases with increasing temperature. Further, VSM studies revealed the soft ferrimagnetic nature of nanoferrites by narrow (M–H) curve. The saturation magnetization (Ms) and the remanent magnetization (Mr) attain the maximum value and thereby decreased with increasing Zn2+ content. On substitution of Pr3+ content, the lattice parameter and crystallite size greater than undoped sample. Further, the conductivity and activation energy decreased. Importantly, the values of Ms, Mr enhanced while Hc were decreased in Pr3+ ions substituted samples. These parameters suggested that the synthesized samples are suitable materials for high density magnetic recording.

在本研究中,我们报道了镨(Pr3+)取代对纳米Mg1−xZnxPryFe2−yO4(0≤x≤1.0)的结构、电学和磁性能的影响,步骤为0.2;Y = 0.0, 0.1)新型溶液燃烧法制备铁氧体。x射线衍射(XRD)模式分析证实了合成的纳米铁素体的单相立方结构。随着Zn2+离子含量的增加,晶格参数从0.82344 nm增加到0.84420 nm。平均晶粒尺寸在22.144 ~ 44.24 nm之间。在红外光谱中,526 ~ 518 cm−1和440 ~ 434 cm−1两个波数范围内由拉伸振动分配的主要吸收波段分别为四面体和八面体。SEM显微图研究了82.86 ~ 183.5 nm范围内的晶粒尺寸。此外,在300 ~ 800 K范围内用双探头法研究了直流电导率,发现临界温度随温度的升高而降低。此外,VSM研究通过窄的(M-H)曲线揭示了纳米铁氧体的软铁磁性。随着Zn2+含量的增加,饱和磁化强度(Ms)和剩余磁化强度(Mr)达到最大值,随后减小。取代Pr3+含量后,样品的晶格参数和晶粒尺寸均大于未掺杂样品。电导率和活化能降低。重要的是,在Pr3+离子取代的样品中,Ms、Mr值增强,Hc值降低。这些参数表明,合成的样品是适合高密度磁记录的材料。
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引用次数: 0
Effect of structural evolutions on optical and electronic properties of co-precipitated ZrO2 nanoparticles 结构演变对共沉淀ZrO2纳米粒子光学和电子性能的影响
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-16 DOI: 10.1007/s10854-025-14223-1
S. Sankar, Lini Jose

Zirconium dioxide (ZrO2) nanoparticles are prepared by co-precipitation method using zirconium oxychloride as the precursor, EDTA as the capping agent, sodium hydroxide and deionized water as the solvent. The synthesized NPs were annealed at different temperatures ranging from 673 to 1273 K. Structural evolutions as a function of annealing temperature are analyzed using XRD, Raman and FTIR analysis. Samples annealed up to 673 K are found to be amorphous. Further annealing resulted in the formation of crystalline structure with tetragonal phase. It turned to polycrystalline comprising both tetragonal and monoclinic phase after annealing above 1073 K. Annealing at further higher temperature resulted in crystallization in monoclinic phase. Morphological studies are conducted using FESEM analysis. The particle size distribution is found to be strongly influenced by annealing temperature. A uniform morphology with adequate distribution of nanosized particles of size 10–20 nm is achieved for particles of polycrystalline phase. Optical absorption and bandgap modification studies were conducted using UV–Visible spectroscopy. Modifications in electronic excitation levels and formation of defects as a function of annealing temperature, in the nanoparticles synthesized, were investigated using photoluminescent studies. The effect of structural and morphological evolutions, with annealing temperature, on optical and electronic properties of ZrO2 nanoparticles are studied in detail.

以氯化氧锆为前驱体,EDTA为封盖剂,氢氧化钠和去离子水为溶剂,采用共沉淀法制备二氧化锆纳米颗粒。将合成的NPs在673 ~ 1273 K的不同温度下进行退火。利用XRD、Raman和FTIR分析了退火温度对结构演变的影响。退火至673 K的样品是无定形的。进一步退火形成了具有四方相的晶体结构。在1073 K以上退火后,它变成由四方相和单斜相组成的多晶。在更高的温度下退火导致单斜相结晶。形态学研究采用FESEM分析。晶粒尺寸分布受退火温度的影响较大。多晶相颗粒的形貌均匀,粒径为10 ~ 20 nm,分布均匀。利用紫外-可见光谱法对其进行了光吸收和带隙改性研究。利用光致发光技术研究了纳米粒子在退火温度下电子激发能级的变化和缺陷的形成。研究了ZrO2纳米粒子的结构和形态变化对其光学和电子性能的影响。
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引用次数: 0
2D Ruddlesden-Popper perovskite interface engineering for efficient perovskite solar cells with exceptional stability 2D Ruddlesden-Popper钙钛矿界面工程,用于具有优异稳定性的高效钙钛矿太阳能电池
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-16 DOI: 10.1007/s10854-024-14116-9
Mahnaz Mozaffari, Abbas Behjat, Mohammad Ali Haddad, Ali Benvidi, Hojjat Amrollahi Bioki

This paper presents an appropriate method of fabricating stable and efficient 3D (top)/2D (bottom) perovskite solar cells (PSCs). The method involves three-step spin-coating deposition, where 3D triple-cation perovskites are used as a light-absorbing material and phenyl trimethylammonium iodide (PTAI) serves to form a 2D Ruddlesden-Popper perovskite. Moisture penetration into the pores of porous structures is a significant degradation factor for perovskite porous solar cells. On the other hand, the high quality of the underlayer can play a crucial role in improving perovskite formation. In this study, different PTAI deposition processes were investigated for their effects on perovskite formation, surface morphology, optical properties, and device stability. As the results showed, a step-by-step post-annealing process after deposition was optimal for forming 2D perovskites, enhancing the device stability and efficiency. The efficiency of the optimized PSCs was improved for 24%, compared to the reference PSCs. Furthermore, this solar cell maintained 92% of its efficiency for a year.

本文提出了一种制备稳定高效的三维(上)/二维(下)钙钛矿太阳能电池的合适方法。该方法涉及三步旋转涂层沉积,其中3D三阳离子钙钛矿用作吸光材料,苯基三甲基碘化铵(PTAI)用于形成2D Ruddlesden-Popper钙钛矿。水分渗透到多孔结构的孔隙中是钙钛矿多孔太阳能电池的一个重要退化因素。另一方面,高质量的下层对钙钛矿的形成起着至关重要的作用。在本研究中,研究了不同的PTAI沉积工艺对钙钛矿形成、表面形貌、光学性质和器件稳定性的影响。结果表明,沉积后分步退火工艺是形成二维钙钛矿的最佳工艺,提高了器件的稳定性和效率。与参考PSCs相比,优化后的PSCs的效率提高了24%。此外,这种太阳能电池在一年内保持了92%的效率。
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引用次数: 0
Ti3SiC2-based resistor paste for thick-film hybrid integrated circuit: the preparation and electrical properties 厚膜混合集成电路用ti3sic2基电阻器浆料的制备及其电性能
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-15 DOI: 10.1007/s10854-024-14207-7
Zhigang Li, Zeya Huang, Renli Fu, Min Yu, Shibo Li, Shukai Fan, Guoping Bei

Thick-film resistors are one of the essential passive components in thick-film hybrid integrated circuit, often made from expensive RuO2-based paste. Herein, a resistor paste containing Ti3SiC2 cermet and CaO-B2O3-SiO2 (CBS) glass has been developed to prepare thick-film resistors. Ti3SiC2 with excellent electrical conductivity and low cost was used as the conductive phase materials. CBS glass frits were prepared as inorganic binder phase. Ti3SiC2-based resistor pastes containing different contents of the glass frit were sintered on alumina substrate at temperatures ranging from 800 to 950 °C. The XRD analysis showed that Ti3SiC2 phase remains stable regardless of the sintering temperatures. The electrical properties of the resistors, including square resistance and temperature coefficient of resistance (TCR) of sintered samples, were examined. Several thick-film resistors with thickness of 13 ~ 15 μm were prepared, showing the square resistance in the range of tens to thousands Ω/□. Due to the TEC mismatch between the film layer and the substrate, the TCR of the synthesized thick-film resistor is as low as ± 100 ppm/°C. The refiring process increased resistance and decreased TCR of the resistive films. Aging tests at 125 °C showed that the denser thick-film resistors formed with higher glass content had better thermal stability after 800 h. This work demonstrates the potential of cost-effective Ti3SiC2-based pastes in producing reliable and stable TFRs for thick-film hybrid integrated circuits.

厚膜电阻器是厚膜混合集成电路中必不可少的无源元件之一,通常由昂贵的基于 RuO2 的浆料制成。本文开发了一种含有 Ti3SiC2 金属陶瓷和 CaO-B2O3-SiO2 (CBS) 玻璃的电阻浆料,用于制备厚膜电阻器。导电相材料采用了导电性能优异且成本低廉的 Ti3SiC2。制备了 CBS 玻璃熔块作为无机粘结相。在 800 至 950 °C 的温度范围内,在氧化铝基板上烧结了含有不同含量玻璃熔块的 Ti3SiC2 电阻浆料。XRD 分析表明,无论烧结温度如何,Ti3SiC2 相都保持稳定。研究还考察了电阻器的电气性能,包括烧结样品的方阻和电阻温度系数(TCR)。制备出的几种厚度为 13-15 μm 的厚膜电阻器的平方电阻在几十到几千 Ω/□ 之间。由于薄膜层和基底之间的 TEC 不匹配,合成厚膜电阻器的 TCR 低至 ± 100 ppm/°C。重新烧结工艺增加了电阻薄膜的电阻,降低了其 TCR。125 °C的老化测试表明,玻璃含量较高的致密厚膜电阻器在800小时后具有更好的热稳定性。这项工作证明了基于Ti3SiC2的浆料在生产用于厚膜混合集成电路的可靠而稳定的TFR方面具有成本效益。
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引用次数: 0
Microscopic and spectroscopic behavior of ZnO@MWCNTs composite ZnO@MWCNTs复合材料的微观和光谱行为
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-15 DOI: 10.1007/s10854-025-14213-3
Bipin Bihari Tripathy, Jayashree Das, Dilip Kumar Mishra, Ramakanta Naik, Sachindra Nath Sarangi, Praveen Kumar, Kamalakanta Satpathy

ZnO@MWCNTs nanocomposites synthesized by solid-state reaction route in different compositions are subjected to various characterization techniques to explore the modifications in the structure and properties of ZnO nanoparticles in the presence of MWCNTs for the photocatalytic, optoelectronics, and spintronics applications. XRD pattern confirms no change in the hexagonal crystalline wurtzite phase in the new system. While Raman and X-ray photoelectron spectra confirm the presence of defects like oxygen vacancies and Zn interstitial and their combinations, the porous nature of the surface and agglomeration of particles in the nanocomposite are evident from the SEM images. UV–visible spectra indicate an increase in the absorbance in the visible region but an insignificant change in the band gap with increasing MWCNTs in ZnO. The mixed magnetic behavior of the samples has been revealed from the SQUID study with low magnetization values in the synthesized ZnO@MWCNTs nanocomposite, indicating the diluted magnetic semiconductor nature of the materials.

ZnO@MWCNTs通过固相反应途径合成了不同成分的纳米复合材料,通过各种表征技术来探索MWCNTs存在下ZnO纳米颗粒的结构和性能的变化,以用于光催化、光电子和自旋电子学的应用。XRD谱图证实了新体系中六方晶纤锌矿相没有变化。虽然拉曼和x射线光电子能谱证实了氧空位和锌空隙及其组合等缺陷的存在,但从SEM图像中可以明显看出纳米复合材料表面的多孔性和颗粒的团聚。紫外可见光谱表明,随着氧化锌中MWCNTs的增加,可见区的吸光度增加,但带隙变化不明显。通过SQUID研究发现,合成的ZnO@MWCNTs纳米复合材料具有低磁化值的混合磁性行为,表明材料具有被稀释的磁性半导体性质。
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引用次数: 0
期刊
Journal of Materials Science: Materials in Electronics
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