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Structure–property relationships in Zn-substituted CuFe2O4 spinel ferrites zn取代CuFe2O4尖晶石铁素体的结构-性能关系
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-29 DOI: 10.1007/s10854-026-16607-3
Sakineh Hosseini, Ahmad Gholizadeh

Zn-doped CuFe2O4 spinel ferrites are synthesized via a sol–gel route, and the influence of Zn incorporation on their structural, optical, and magnetic properties was systematically investigated. X-ray diffraction and FTIR analyses confirm a progressive transformation of CuFe2O4 from a tetragonal to a cubic spinel phase with increasing Zn content. Optical characterization using UV–vis spectroscopy shows that the band gap varies from 1.71 to 1.23 eV, reflecting the effects of lattice distortion and cation redistribution. Magnetic measurements reveal a gradual transition from hard to soft magnetic behavior, characterized by a pronounced decrease in coercivity and a simultaneous enhancement in saturation magnetization. These findings indicate that Zn substitution effectively modulates exchange interactions and local magnetic moments, offering valuable insights into the design of ferrite materials for optoelectronic and magnetic applications.

采用溶胶-凝胶法制备了掺杂Zn的CuFe2O4尖晶石铁氧体,系统研究了掺杂Zn对其结构、光学和磁性能的影响。x射线衍射和红外光谱分析证实,随着Zn含量的增加,CuFe2O4由四方尖晶石相逐渐转变为立方尖晶石相。紫外可见光谱的光学表征表明,带隙在1.71 ~ 1.23 eV之间变化,反映了晶格畸变和阳离子再分布的影响。磁性测量揭示了从硬磁到软磁行为的逐渐转变,其特征是矫顽力显著降低,同时饱和磁化强度增强。这些发现表明,锌取代有效地调节交换相互作用和局部磁矩,为光电和磁性应用的铁氧体材料的设计提供了有价值的见解。
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引用次数: 0
Structural, thermal characteristics, and radiation shielding properties of FeWO4 nanoparticles doped PVB films FeWO4纳米颗粒掺杂PVB薄膜的结构、热特性及辐射屏蔽性能
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-28 DOI: 10.1007/s10854-026-16688-0
Amani Alruwaili, Mohammed O. Alziyadi, Asma Alkabsh, B. Alayed, M. S. Shalaby

This study presents transparent, flexible, lead-free polyvinyl butyral (PVB) films that utilize FeWO4 nanoparticles to substantially enhance gamma-photon attenuation properties and thermal stability, thereby facilitating the development of lightweight shielding materials. Herein, PVB films doped with FeWO4 (0%, 1%, 2%, and 3 wt.%) were synthesized via the solution casting technique. XRD demonstrated that FeWO4 NPs possess a monoclinic primitive structure with a crystallite size of 47 nm. EDX and SEM were used to evaluate the morphology and elemental composition of the FeWO4 NPs. Thermogravimetric analysis (TGA) revealed that incorporating FeWO4 markedly improved the thermal stability of PVB films. The linear attenuation coefficient for gamma rays, ranging from 0.02 MeV to 15 MeV, was simulated using the MCNP6 code. The results indicate that the mass attenuation coefficient (MAC) rises progressively with increasing FeWO4 content, particularly at low to intermediate gamma energies, accompanied by a decrease in both the half-value layer (HVL) and the mean free path (MFP) relative to pure PVB. MCNP6 simulation data align with the obtained Phy-X/PSD calculations and XCOM databases, indicating strong cross-validation among methods. The effective electron number, Neff, increases with FeWO4 content at photon energies where photoelectric and Compton processes dominate. The Fast neutron removal cross section (FNRCS) values of PVB/FeWO4 nanocomposites increased by incorporating FeWO4 NPs. PVB/FeWO4 nanocomposites are proposed as an alternative to ecologically friendly and lead-free materials for radiation shielding.

本研究提出了透明、柔韧性、无铅的聚乙烯醇丁醛(PVB)薄膜,利用FeWO4纳米颗粒大大提高了γ光子衰减性能和热稳定性,从而促进了轻质屏蔽材料的发展。本文通过溶液铸造技术合成了掺杂FeWO4(0%、1%、2%和3wt .%)的PVB薄膜。XRD结果表明,fewo4nps具有单斜晶型原始结构,晶粒尺寸为47 nm。利用EDX和SEM对FeWO4 NPs的形貌和元素组成进行了表征。热重分析(TGA)表明,FeWO4的加入显著提高了PVB薄膜的热稳定性。利用MCNP6程序模拟了伽马射线的线性衰减系数,衰减范围为0.02 MeV ~ 15 MeV。结果表明,随着FeWO4含量的增加,质量衰减系数(MAC)逐渐上升,特别是在中低γ能时,相对于纯PVB,半值层(HVL)和平均自由程(MFP)均下降。MCNP6模拟数据与获得的Phy-X/PSD计算和XCOM数据库一致,表明方法之间具有很强的交叉验证性。在光电和康普顿过程占主导地位的光子能量下,有效电子数Neff随FeWO4含量的增加而增加。FeWO4 NPs的加入提高了PVB/FeWO4纳米复合材料的快中子去除截面(FNRCS)值。PVB/FeWO4纳米复合材料被提出作为生态友好和无铅的辐射屏蔽材料的替代品。
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引用次数: 0
Optimizing fatigue damage of through-silicon via based on the real microstructure 基于真实微观结构的硅通孔疲劳损伤优化研究
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-28 DOI: 10.1007/s10854-026-16643-z
Dongyang Tian, Jiahao Liu, Fangzhou Chen, Zhenhai Chen, Xiaodong Jian, Xiangjun Lu, Bin Zhou, Hao Zhao

The Cu-filled Through-Silicon Via (TSV) on the thermal–mechanical reliability of 3D-integrated circuit has become increasingly prominent. Conventional simulation methods typically treat Cu as the isotropic material and ignore the influence of Cu grains in the microstructure, leading to deviations between the simulation and experimented results. This paper proposes a thermal–mechanical-coupled analysis strategy based on the real TSV microstructure, and investigates the relationship between the TSV microstructure and its fatigue damage under thermal cycling loads. Firstly, the low-damage cross section of TSV, with roughness as low as 7.69 nm and band contrast of diffraction pattern as high as 164, was obtained by etching technique of focus ion beam. Then, the Response Surface methodology and Monte Carlo simulation were applied to optimize the key parameters of electron backscatter diffraction (EBSD), increasing the average band contrast of EBSD map from 89.33 to 98.11 and significantly improving the accuracy of microstructure characterization. Based on the high-quality EBSD data, the finite element model of TSV incorporating real grain numbers and orientations was constructed. Finally, through thermal cycling simulations, the effects of grain numbers and orientations on fatigue damage were investigated, which shows that the < 100 > orientation exhibits the best fatigue resistance. The real structure with random orientations is more prone to fatigue damage due to deformation incompatibility between grains. Furthermore, grain number is also closely related to fatigue damage, the higher the number of grains, the lower the risk of fatigue damage.

cu -fill Through-Silicon Via (TSV)对3d集成电路热机械可靠性的影响日益突出。传统的模拟方法通常将Cu视为各向同性材料,忽略了Cu晶粒对微观结构的影响,导致模拟结果与实验结果存在偏差。提出了一种基于TSV真实显微组织的热-力耦合分析策略,研究了TSV显微组织与热循环载荷下疲劳损伤的关系。首先,通过聚焦离子束刻蚀技术获得了TSV的低损伤截面,其粗糙度低至7.69 nm,衍射图样带对比度高达164;然后,利用响应面法和蒙特卡罗模拟对电子背散射衍射(EBSD)的关键参数进行优化,将EBSD图的平均波段对比度从89.33提高到98.11,显著提高了微结构表征的准确性。基于高质量的EBSD数据,构建了包含真实晶粒数和取向的TSV有限元模型。最后,通过热循环模拟,研究了晶粒数和取向对疲劳损伤的影响,结果表明,晶粒数为100的取向具有最佳的抗疲劳性能。晶粒间变形不相容使得具有随机取向的真实组织更容易产生疲劳损伤。晶粒数也与疲劳损伤密切相关,晶粒数越大,疲劳损伤的风险越低。
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引用次数: 0
Optically stimulated luminescence characteristics of heteroepitaxial diamond with different nitrogen concentrations: effects of pre-irradiation and luminescence center activation 不同氮浓度的异质外延金刚石的光激发发光特性:预辐照和发光中心活化的影响
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-28 DOI: 10.1007/s10854-026-16690-6
Kiyomitsu Shinsho, Go Okada, Koji Koyama, Keitaro Hitomi, Seong Woo Kim

This study systematically investigated the optically stimulated luminescence (OSL) characteristics of heteroepitaxial diamond (HED) with two different nitrogen concentrations (3 ppb and 1 ppm). The nitrogen-rich sample exhibited substantially higher OSL intensity than the low-nitrogen sample, reflecting an increased density of trapping sites and luminescent centers associated with nitrogen-related defects. Both samples showed weak dose dependence below 10 Gy and saturation at 100–200 Gy, consistent with the classical center-depletion model. A pronounced enhancement in OSL sensitivity was observed only in the nitrogen-rich sample following pre-irradiation up to 400 Gy. This enhancement is attributed to increased trapped-electron population, activation of previously inactive luminescent centers, and improved radiative recombination efficiency. The enhancement was completely removed by annealing at 500 °C for 60 s, indicating that the effect originates from metastable changes in defect occupancy rather than permanent defect formation. The OSL emission spectra exhibited a single broad band between 500 and 800 nm, peaking at 620–650 nm, corresponding to the phonon sideband of NV⁻-related luminescence. No zero-phonon line at 637 nm was resolved, consistent with the broad-band, phonon-assisted nature of the measured OSL emission. The spectral shape remained unchanged after pre-irradiation. Fading measurements further revealed that the nitrogen-rich diamond possesses more thermally stable trap levels than the low-nitrogen sample. These findings demonstrate that nitrogen incorporation is an effective strategy for tuning the OSL performance of HED and the potential of nitrogen-rich HED for high-dose and reusable dosimetry applications.

本文系统地研究了不同氮浓度(3 ppb和1 ppm)下异质外延金刚石(HED)的光激发发光(OSL)特性。富氮样品的OSL强度明显高于低氮样品,这反映了与氮相关缺陷相关的捕获位点和发光中心密度的增加。两种样品在10 Gy以下表现出较弱的剂量依赖性,在100-200 Gy时表现出饱和,符合经典的中心损耗模型。在预辐照高达400 Gy后,仅在富氮样品中观察到OSL敏感性的显着增强。这种增强归因于捕获电子数量的增加,先前不活跃的发光中心的激活,以及辐射重组效率的提高。在500℃退火60 s后,这种增强完全消失了,这表明这种效应是由缺陷占据的亚稳态变化引起的,而不是永久性缺陷的形成。OSL发射光谱在500 ~ 800 nm之间有一个单一的宽带,峰值在620 ~ 650 nm,对应于NV毒枭相关发光的声子边带。在637 nm处没有分辨出零声子线,这与测量到的OSL发射的宽带声子辅助性质一致。预辐照后光谱形状保持不变。衰落测量进一步显示,富氮金刚石比低氮样品具有更高的热稳定陷阱水平。这些发现表明,氮掺入是调整HED的OSL性能的有效策略,以及富氮HED在高剂量和可重复使用剂量学应用中的潜力。
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引用次数: 0
Growth and characterization of methyl orange dye-doped adipic acid single crystals for optical filtering and thermal stability applications 用于光学滤光和热稳定性应用的甲基橙染料掺杂己二酸单晶的生长和表征
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-28 DOI: 10.1007/s10854-026-16684-4
S. Anbu Chudar Azhagan, V. Marianandhakumar

High-quality methyl orange dye-doped adipic acid single crystals were harvested successfully at ambient temperature by solvent evaporation route. SXRD, PXRD, FT-IR and EDAX examination confirms the small appreciable amount of entry of dopant species in the grown crystalline matrix. Transmittance percentage of UV spectrum was suddenly dipped around 480–490 nm (n to π* transition peak) due to the occurrence of methyl orange dye absorption peak. Kurtz NLO experiment confirms decline in second harmonic generation efficiency value. The melting temperature is augmented in TG–DTA thermograms. Methyl orange dye MO-doped adipic acid crystals show potential for optoelectronic devices, acting as optical filters due to dipped transmission percentage and superior decomposition points, demonstrating increased thermal resilience for practical applications.

采用溶剂蒸发法制备了高质量的甲基橙染料掺杂己二酸单晶。SXRD, PXRD, FT-IR和EDAX检测证实在生长的晶体基质中有少量的杂质进入。在480 ~ 490 nm (n到π*跃迁峰)附近,由于甲基橙染料吸收峰的出现,紫外光谱的透射率突然下降。Kurtz NLO实验证实了二次谐波产生效率值的下降。熔化温度在TG-DTA热图中有所增加。甲基橙染料mo掺杂己二酸晶体显示出光电子器件的潜力,由于其降低的透射率和优越的分解点,可以作为光学滤光片,在实际应用中显示出更高的热弹性。
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引用次数: 0
Dielectric and microwave absorption properties of sunflower and marigold: a comparative analysis 向日葵和万寿菊介电和微波吸收特性的比较分析
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-28 DOI: 10.1007/s10854-026-16681-7
T Jaganatha Patro, Saran Srihari Sripada Panda, Hari Sankar Mohanty, Swagatadeb Sahoo

This article reports for first time, a comparative dielectric properties study of two dried flower biomasses (Sunflower and Marigold), with a prime focus on higher frequency behavior and analysis of reflection loss (RL) profiles for microwave applications. In this current investigation, the microwave absorption properties of two dried flower biomasses were prepared using a simple drying process. Microstructural study revealed unique canal and ribs cage structure in Sunflower and a highly porous flower-like structure along with agglomerated microspheres in Marigold biomass. Spectroscopic studies confirmed the presence of various functional groups and chemical constituents of both biomasses. The average dielectric constant and loss tangent vales of Sunflower and Marigold are found to be 2.61, 0.21 and 3.52, 0.23, respectively, using N5222B PNA Network Analyser. This variation in dielectric properties can be attributed to difference in their microstructure, carbon content, chemical constituents, and functional groups in naturally available biomasses. The reflection loss profiles were studied for both biomasses using CST Microwave Studio Simulator and a comparative analysis has done with wood biomass. Reflection loss profile of Sunflower was −18.80 dB with Effective Absorption Bandwidth (EAB) 5.38 GHz for 6 mm thickness and 7 mm shows highest EAB of 11.45 GHz which covers 82% of K-band. The reflection loss profile of Marigold shows −15.98 dB at 22.72 GHz frequency with EAB of 7.07 for 3 mm thickness.

本文首次报道了两种干花生物质(向日葵和万金菊)介电特性的比较研究,主要关注微波应用的高频行为和反射损耗(RL)分布分析。在本研究中,采用简单的干燥工艺制备了两种干燥的花卉生物质的微波吸收特性。微观结构研究发现,向日葵具有独特的管状和肋状笼状结构,万寿菊生物量具有高度多孔的花状结构和球状微球。光谱研究证实了两种生物质中各种官能团和化学成分的存在。利用N5222B PNA网络分析仪,向日葵和万寿菊的平均介电常数和损耗正切值分别为2.61、0.21和3.52、0.23。这种介电特性的变化可归因于它们的微观结构、碳含量、化学成分和天然可用生物质中官能团的差异。利用CST微波工作室模拟器研究了两种生物质的反射损失分布,并对木材生物质进行了比较分析。葵花的反射损耗分布为−18.80 dB,有效吸收带宽(EAB)为5.38 GHz,厚度为6 mm和7 mm时,EAB最高为11.45 GHz,覆盖了82%的k波段。在22.72 GHz频率下,万金菊的反射损耗曲线为−15.98 dB,厚度为3 mm时,EAB为7.07。
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引用次数: 0
Heat-treatment temperature tuning the phase composition and luminescence of Mg2SnO4:Eu3+ phosphors 热处理温度对Mg2SnO4:Eu3+荧光粉的相组成和发光性能的影响
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-28 DOI: 10.1007/s10854-026-16612-6
Ting Yao, Keke Wang, Xiang Zhang, Lei Cao, Shixian Xiong

This study explores the regulatory effect of heat-treatment temperature on the phase composition and luminescent properties of Mg2SnO4:Eu3+ phosphors prepared by microdroplet spray pyrolysis. A series of phosphors were synthesized, and their phase composition, morphology, and luminescent properties were systematically investigated via X-ray diffraction, fluorescence spectroscopy, and thermal stability testing. Results show that heat-treatment temperature is critical for phase regulation as pure cubic inverse spinel Mg2SnO4 is obtained at 1100 °C, while Mg2SnO4/SnO2 biphasic composite structure forms at 900–1000 °C. All samples exhibit well-defined, monodisperse spherical particles with morphology unaffected by phase evolution. Under 254 nm excitation, biphasic composite phosphors show dominant Eu3+ 5D0 → 7F1 orange emission with strong afterglow, while pure-phase samples exhibit weak Eu3+ red emission and green afterglow, confirming SnO2 enhances Eu3+ orange emission. The optimal Eu3+ doping concentration is 0.02 mol; excessive doping induces concentration quenching. Afterglow decay follows a multi-exponential model attributed to multiple trap levels, and samples with different phases show distinct thermal quenching behaviors and stability.

本研究探讨了热处理温度对微滴喷雾热解法制备Mg2SnO4:Eu3+荧光粉的物相组成和发光性能的调控作用。合成了一系列荧光粉,并通过x射线衍射、荧光光谱和热稳定性测试系统地研究了它们的相组成、形貌和发光性能。结果表明,热处理温度对Mg2SnO4的相调节至关重要,在1100℃时可得到纯净的立方反尖晶石Mg2SnO4,而在900 ~ 1000℃时形成Mg2SnO4/SnO2双相复合结构。所有样品均表现出良好定义的单分散球形颗粒,其形貌不受相演化的影响。在254 nm激发下,双相复合荧光粉表现出较强的Eu3+ 5D0→7F1橙色发射和余辉,而纯相荧光粉表现出较弱的Eu3+红色发射和绿色余辉,证实SnO2增强了Eu3+橙色发射。Eu3+的最佳掺杂浓度为0.02 mol;过量掺杂导致浓度猝灭。余辉衰减遵循多陷阱能级的多指数模型,不同相的样品表现出不同的热猝灭行为和稳定性。
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引用次数: 0
Studies on impedance, modulus, and dielectric properties of undoped and Co, V-doped complex perovskite Y2/3Cu3Ti4O12 and Y2/3Cu3Ti3.95Co0.025V0.025O12 ceramic synthesized via novel semi-wet route 新型半湿法合成未掺杂和掺Co、v复合钙钛矿Y2/3Cu3Ti4O12和Y2/3Cu3Ti3.95Co0.025V0.025O12陶瓷的阻抗、模量和介电性能研究
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-28 DOI: 10.1007/s10854-026-16573-w
Anup Kumar, Devendra Kumar, Atendra Kumar, D. Tiwary, K. D. Mandal

Addressing current environmental challenges, a key issue in the ceramic industry is developing bulk electro-ceramic materials through low-cost and eco-friendly synthesis methods. Perovskite oxide has gained significant attention from researchers due to its high dielectric constant and its diverse applications in various fields of daily life. To tackle this, we have synthesized YCTO and YCTCVO, a prominent electro-ceramic material with a structure similar to CaCu3Ti4O12 (CCTO), using an environmentally friendly semi-wet route and a readily available, low-cost titanium source. Y2/3Cu3Ti4O12 (YCTO) and Co, V-doped Y2/3Cu3Ti4O12 (YCTCVO) Ceramic were synthesized by semi-wet route. The confirmation of phases in Y2/3Cu3Ti4O12 (YCTO) and Co, V-doped Y2/3Cu3Ti4O12 (YCTCVO) ceramic were determined through X-ray diffraction (XRD) and Le Bail analysis of XRD data which emphasized an occurrence of single-phase formation of YCTO and YCTCVO ceramic along with a minor peak of CuO. Appropriate oxidation state of elements present in YCTCVO was confirmed by X-ray photoelectron microscopy (XPS). The average grain size and particle size of YCTO ceramic from Scanning electron microscopy (SEM) and Transmission electron microscopy (TEM) analyses on the respective scale of 4 μm and 0.5 μm were observed through ImageJ software and found to be 1.96 ± 0.50 μm and 0.33 ± 0.05 μm and for YCTCVO to be 4.03 ± 0.50 μm and 0.27 ± 0.05 μm, respectively. The presence of all elements respect to both ceramics were confirmed by Energy-dispersive spectroscopy (EDS) analysis. The average roughness (Ra) and a root mean square roughness (RMS) were calculated to be 0.46 μm (Ra), 0.57 μm (RMS) for YCTO, and 0.51 μm (Ra) and 0.63 μm (RMS) for YCTCVO, respectively. YCTO shows highest dielectric constant 88,395 at 523 K and 100 Hz while it was 1815 at 523 K and 100 Hz for YCTCVO ceramics. The tanδ of the YCTO and YCTCVO was noted approximately 7.0 and 3.6 at 100 Hz and 523 K. It was confirmed from above observations that the higher value of dielectric constant of YCTO ceramic in comparison to that of YCTCVO ceramic which might be due to lower RMS of YCTO ceramic observed through AFM studies, utilized in the application of energy storage devices.

为了解决当前的环境挑战,陶瓷行业的一个关键问题是通过低成本和环保的合成方法开发大块电陶瓷材料。钙钛矿氧化物因其较高的介电常数和在日常生活中的广泛应用而受到研究人员的极大关注。为了解决这个问题,我们已经合成了YCTO和YCTCVO, YCTCVO是一种突出的电陶瓷材料,其结构类似于CaCu3Ti4O12 (CCTO),使用环保的半湿路线和现成的低成本钛源。采用半湿法合成了Y2/3Cu3Ti4O12 (YCTO)和Co, v掺杂Y2/3Cu3Ti4O12 (YCTCVO)陶瓷。通过x射线衍射(XRD)和XRD数据的Le Bail分析确定了Y2/3Cu3Ti4O12 (YCTO)和Co, v掺杂的Y2/3Cu3Ti4O12 (YCTCVO)陶瓷中的相,强调YCTO和YCTCVO陶瓷存在单相形成,并伴有CuO的小峰。用x射线光电子显微镜(XPS)证实了YCTCVO中元素的适当氧化态。通过ImageJ软件对YCTO陶瓷的扫描电镜(SEM)和透射电镜(TEM)在4 μm和0.5 μm尺度上的平均晶粒尺寸和粒径进行了观察,分别为1.96±0.50 μm和0.33±0.05 μm, YCTCVO的平均晶粒尺寸和粒径分别为4.03±0.50 μm和0.27±0.05 μm。通过能谱分析证实了两种陶瓷中所有元素的存在。YCTO的平均粗糙度(Ra)和均方根粗糙度(RMS)分别为0.46 μm (Ra)和0.57 μm (RMS), YCTCVO的平均粗糙度(Ra)和均方根粗糙度(RMS)分别为0.51 μm和0.63 μm (RMS)。YCTO在523 K和100 Hz时介电常数最高,为88,395,而YCTCVO陶瓷在523 K和100 Hz时介电常数最高,为1815。在100 Hz和523 K时,YCTO和YCTCVO的tanδ分别为7.0和3.6。从以上观察结果可以证实,YCTO陶瓷的介电常数比YCTCVO陶瓷的介电常数高,这可能是由于通过AFM研究观察到的YCTO陶瓷的均方根值较低,可以用于储能器件的应用。
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引用次数: 0
Tetragonal-symmetric Bi2CdO4 nanoflakes: Symmetrically configured device-grade solid-state supercapacitor 四边形对称Bi2CdO4纳米片:对称配置的器件级固态超级电容器
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-28 DOI: 10.1007/s10854-026-16670-w
Swapna Rout, Vinay Soni, Suraj R. Sankapal, Babasaheb R. Sankapal

Nanoflakes growth of Bi2CdO4 have been accomplished yielding tetragonal symmetric crystal structure through two-step chemical approach at room temperature as revealed by structural and morphological analysis. The liquid-configured electrochemical analysis of Bi2CdO4 grown on conducting stainless steel substrate was used as current collector and yields specific capacitance of 158.30 F/g (areal ~ 134.55 mF/cm2) at 5 mV/s with cyclic capacitive retention of 68.15% over 3000 CV cycles. Solid-state device configured through two analogous electrodes witnessed 1.5 V potential window with specific capacitance of 29.96 F/g (areal ~ 25.47 mF/ cm2) at 5 mV/s along with stability retention over 68.92% for 5000 CV cycles. Ragone’s curve specified energy density of 3.61 Wh/kg with 477.66 W/kg of power density. Illuminating a red LED panel and running small dc fan demonstrated the real-life application of a designed device-grade symmetric solid-state supercapacitor.

结构和形态分析表明,在室温条件下,通过两步化学方法完成了Bi2CdO4纳米片的生长,得到了四方对称的晶体结构。以导电不锈钢衬底上生长的Bi2CdO4为集流剂,在5 mV/s下的比电容为158.30 F/g(面积~ 134.55 mF/cm2),在3000 CV循环中电容保持率为68.15%。通过两个类似电极配置的固态器件具有1.5 V电位窗口,在5 mV/s下比电容为29.96 F/g(面积~ 25.47 mF/ cm2), 5000 CV循环稳定性保持率超过68.92%。Ragone曲线规定能量密度为3.61 Wh/kg,功率密度为477.66 W/kg。点亮红色LED面板和运行小型直流风扇演示了所设计的器件级对称固态超级电容器的实际应用。
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引用次数: 0
Ultra-low thermal conductivity and dielectric stability in novel high-entropy perovskite oxides for advanced thermal and electronic applications 新型高熵钙钛矿氧化物的超低导热性和介电稳定性,用于先进的热学和电子应用
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-27 DOI: 10.1007/s10854-026-16570-z
Rupesh Kumar, Raj Kumar Singh, Kumari Mamta, Sumit Kumar Roy, Sushil Kumar Pandey
<div><p>The concept of high-entropy has recently emerged as a promising strategy in the development of advanced thermal barrier coating (TBC) materials. By introducing mass and size disorder through the incorporation of multiple distinct cations at a single crystallographic site in mixed oxides, high-entropy oxides (HEOs) can be designed to exhibit stabilized single-phase structures with intrinsically low thermal conductivities. In this work, we report the successful solid state synthesis and comprehensive characterization of three novel single-phase high-entropy perovskites: Ba(Ti<sub>1/5</sub>Zr<sub>1/5</sub>Hf<sub>1/5</sub>Sn<sub>1/5</sub>Mn<sub>1/5</sub>)O<sub>3</sub>, Ba(Ti<sub>1/5</sub>Zr<sub>1/5</sub>Hf<sub>1/5</sub>Sn<sub>1/5</sub>Ce<sub>1/5</sub>)O<sub>3</sub>, and Sr(Ti<sub>1/4</sub>Zr<sub>1/4</sub>Hf<sub>3/20</sub>Sn<sub>1/4</sub>Mn<sub>1/10</sub>)O<sub>3</sub>. The compounds Ba(Ti<sub>1/5</sub>Zr<sub>1/5</sub>Hf<sub>1/5</sub>Sn<sub>1/5</sub>Mn<sub>1/5</sub>)O<sub>3</sub>, Ba(Ti<sub>1/5</sub>Zr<sub>1/5</sub>Hf<sub>1/5</sub>Sn<sub>1/5</sub>Ce<sub>1/5</sub>)O<sub>3</sub>, and Sr(Ti<sub>1/4</sub>Zr<sub>1/4</sub>Hf<sub>3/20</sub>Sn<sub>1/4</sub>Mn<sub>1/10</sub>) exhibit the low thermal conductivities of approximately 1.84 Wm<sup>−1</sup> K<sup>−1</sup>, 1.72 Wm<sup>−1</sup> K<sup>−1</sup>, and 0.72 Wm<sup>−1</sup> K<sup>−1</sup>, respectively, at 800 K. The Sr-based compound exhibits an ultra-low average thermal conductivity of ~ 0.63 W·m⁻<sup>1</sup>·K⁻<sup>1</sup>, which remains nearly constant over the temperature range of 300–800 K. This value corresponds to an almost 68% reduction compared to the benchmark thermal barrier coating (TBC) material, 8 mol% yttria-stabilized zirconia (8YSZ), highlighting its strong potential as a next-generation TBC candidate. The observed ultra-low, amorphous-like thermal conductivity is primarily attributed to enhanced phonon scattering induced by severe lattice distortion and high configurational entropy. Moreover, electrical characterization reveals a highly stable dielectric constant up to 200 °C, accompanied by low dielectric loss, indicating additional potential for electronic and capacitive applications. The room temperature ac conductivity for sample Ba(Ti<sub>1/5</sub>Zr<sub>1/5</sub>Hf<sub>1/5</sub>Sn<sub>1/5</sub>Mn<sub>1/5</sub>)O<sub>3</sub>, Ba(Ti<sub>1/5</sub>Zr<sub>1/5</sub>Hf<sub>1/5</sub>Sn<sub>1/5</sub>Ce<sub>1/5</sub>)O<sub>3</sub> and Sr(Ti<sub>1/4</sub>Zr<sub>1/4</sub>Hf<sub>3/20</sub>Sn<sub>1/4</sub>Mn<sub>1/10</sub>)O<sub>3</sub> are 1.05 × 10<sup>–6</sup> S/m, 1.01 × 10<sup>–6</sup> S/m and 1.63 × 10<sup>–6</sup> S/m, respectively, at 1 kHz frequency, which shows the highly insulating nature of the samples. These findings highlight the multifunctional character of high-entropy perovskites and position them as promising candidates for thermal barrier coatings, dielectric components, and a broad range of high-temperature applications. Further investigation is warranted to fully rea
近年来,高熵概念已成为开发先进热障涂层(TBC)材料的一种有前途的策略。通过在混合氧化物的单晶位引入多个不同阳离子,引入质量和尺寸的无序性,高熵氧化物(HEOs)可以被设计成具有低导热性的稳定单相结构。本文报道了三种新型单相高熵钙钛矿Ba(Ti1/5Zr1/5Hf1/5Sn1/5Mn1/5)O3、Ba(Ti1/5Zr1/5Hf1/5Sn1/5Ce1/5)O3和Sr(ti1 / 4zr1 / 4hf1 / 20sn1 / 4mn1 /10)O3的成功固态合成和综合表征。化合物Ba(Ti1/5Zr1/5Hf1/5Sn1/5Mn1/5)O3、Ba(Ti1/5Zr1/5Hf1/5Sn1/5Ce1/5)O3和Sr(ti1 / 4zr1 / 4hf1 / 20sn1 / 4mn1 /10)在800 K时的导热系数分别为1.84 Wm−1 K−1、1.72 Wm−1 K−1和0.72 Wm−1 K−1。锶基化合物表现出超低的平均热导率- 0.63 W·m(⁻1·K),在300-800 K的温度范围内几乎保持不变。与基准热障涂层(TBC)材料相比,该值减少了近68%,即8mol %的氧化钇稳定氧化锆(8YSZ),突出了其作为下一代TBC候选材料的强大潜力。观察到的超低非晶样导热系数主要归因于严重的晶格畸变和高构型熵引起的声子散射增强。此外,电学特性揭示了高达200°C的高度稳定的介电常数,伴随着低介电损耗,表明电子和电容应用的额外潜力。在1 kHz频率下,样品Ba(Ti1/5Zr1/5Hf1/5Sn1/5Mn1/5)O3、Ba(Ti1/5Zr1/5Hf1/5Sn1/5Ce1/5)O3和Sr(ti1 / 4zr1 / 4hf1 / 20sn1 / 4mn1 /10)O3的室温交流电导率分别为1.05 × 10-6 S/m、1.01 × 10-6 S/m和1.63 × 10-6 S/m,表明样品具有良好的绝缘特性。这些发现突出了高熵钙钛矿的多功能特性,并将其定位为热障涂层、介电元件和广泛的高温应用的有前途的候选者。需要进一步研究,以充分发挥和优化其多功能潜力。
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Journal of Materials Science: Materials in Electronics
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