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Electrical properties (AC and DC) of epoxy resin/carbon nanofiber composites: percolation models and modified general rule of mixtures 环氧树脂/纳米碳纤维复合材料的交直流电性能:渗透模型和改进的混合一般规律
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-18 DOI: 10.1007/s10854-025-16396-1
A. G. Bannov, N. F. Uvarov, E. A. Maksimovskiy, P. B. Kurmashov

This work was conducted to examine the electrical conductivity and permittivity of epoxy/CVD grown carbon nanofiber composites, focusing on how these properties vary with frequency and the volume fraction of the filler used. Nested cone structure carbon nanofibers (CNFs) synthesized over Ni/Al2O3 catalyst in a vibrofluidized bed reactor served as filler. Electrical properties of epoxy/CNF composites were investigated with the wide volume fraction range (ϕ= 0–0.224) and across a frequency spectrum ranging from 0.05 Hz to 106 Hz at 25°C. The objective was to relate the experimental findings and compare them to theoretical models for assessing the electrical properties (e.g., two-exponent phenomenological percolation equation; general rule of mixtures; model based on Fermi-Dirac distribution, and others), both AC and DC, of “conductor-insulator” composites. The R2 coefficient of the experimental DC conductivity of the epoxy/CNF composites ranged from 0.789 to 0.984, depending on the theoretical model used for fitting. To describe the AC conductivity and permittivity of epoxy/carbon nanofiber composites concerning filler volume fraction and frequency, both the general rule of mixtures and two-exponential phenomenological percolation equations were evaluated. It was observed that the electrical characteristics are strongly influenced by factors such as the shape of the filler, as well as its aggregation and distribution within the polymer matrix. A newly modified general rule of mixtures was proposed to effectively represent the experimental data on conductivity and permittivity in relation to frequency and the volume fraction of CNFs, based on the morphology of CNF aggregates.

研究了环氧树脂/CVD生长的纳米碳纤维复合材料的导电性和介电常数,重点研究了这些性能随频率和填料体积分数的变化。以Ni/Al2O3催化剂为填料,在振动流化床反应器中合成了巢状锥体结构的纳米碳纤维。在25°C下,研究了环氧树脂/CNF复合材料在宽体积分数范围(φ = 0-0.224)和频谱范围(0.05 Hz至106 Hz)下的电性能。目的是将实验结果与评估“导体-绝缘体”复合材料交流和直流电性能的理论模型(例如,双指数现象学渗透方程;混合的一般规则;基于费米-狄拉克分布的模型等)进行比较。根据拟合理论模型的不同,环氧树脂/CNF复合材料直流电导率的R2系数在0.789 ~ 0.984之间。为了描述环氧/碳纳米纤维复合材料的交流电导率和介电常数与填料体积分数和频率的关系,利用混合的一般规律和双指数现象学渗流方程进行了计算。结果表明,填料的形状及其在聚合物基体中的聚集和分布等因素对电特性有很大影响。基于CNF聚集体的形态,提出了一种新的改进的混合一般规则,以有效地表示CNF的电导率和介电常数与频率和体积分数的关系。
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引用次数: 0
Investigation of 2-bromo-6-chloro-4-nitroaniline single crystals for laser and optoelectronics: a nonlinear optical perspective 激光与光电用2-溴-6-氯-4-硝基苯胺单晶的非线性光学研究
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-18 DOI: 10.1007/s10854-025-16399-y
C. S. Juliet Brintha, M. Jini Pramila

2-Bromo-6-chloro-4-nitroaniline (C6H4BrClN2O2) crystals have been successfully synthesised by solution evaporation technique. Single crystal XRD is used to verify its structure like monoclinic system and P21/c space group. Functional groups were identified by Fourier Transform Infrared (FT‑IR) spectroscopy. Optical transmittance was examined using Ultraviolet–Visible (UV–Vis) spectroscopy, giving a band‑gap energy of 4.14 eV for calculated 4.1 eV for Tauc’s plot. Thermal stability was evaluated by Thermogravimetric Analysis (TGA), showing the material remains stable up to 137 °C. Mechanical testing indicated that BCN is a relatively soft organic crystal. Electrical properties and Laser Damage Threshold (LDT) were also assessed. Quantum‑chemical calculations, including Highest Occupied Molecular Orbital–Lowest Unoccupied Molecular Orbital (HOMO–LUMO) and Molecular Electrostatic Potential (MEP) analyses, complemented the experimental findings, and theoretical Nonlinear Optical (NLO) parameters were computed. Z‑scan (Z‑scan) measurements confirmed third‑order NLO activity with reverse‑saturation absorption and a positive nonlinear refractive index. These results position BCN as a promising candidate for optoelectronic and NLO device applications.

采用溶液蒸发法制备了2-溴-6-氯-4-硝基苯胺(C6H4BrClN2O2)晶体。采用单晶XRD验证其结构为单斜晶系和P21/c空间群。用傅里叶变换红外光谱(FT - IR)鉴定了官能团。利用紫外-可见(UV-Vis)光谱学对透射率进行了测试,得出Tauc图的带隙能量为4.14 eV,而计算出的带隙能量为4.1 eV。热稳定性通过热重分析(TGA)进行评估,表明材料在137°C下保持稳定。力学测试表明,BCN是一种较软的有机晶体。电性能和激光损伤阈值(LDT)也进行了评估。量子化学计算,包括最高占据分子轨道-最低未占据分子轨道(HOMO-LUMO)和分子静电势(MEP)分析,补充了实验结果,并计算了理论非线性光学(NLO)参数。Z扫描(Z扫描)测量证实了具有反饱和吸收和正非线性折射率的三阶NLO活性。这些结果使BCN成为光电子和NLO器件应用的有前途的候选者。
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引用次数: 0
Tailoring microstructural and optoelectronic properties of ZnOx thin film via oxygen content in radio frequency reactive magnetron sputtering 射频反应磁控溅射中氧含量对zno薄膜微结构和光电子性能的影响
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-18 DOI: 10.1007/s10854-025-16343-0
A. Chelouche, T. Touam, D. Mendil, D. Djouadi, F. Challali

In this study, ZnOx thin films were deposited by RF magnetron sputtering under varying oxygen partial pressures, with O2/(O2 + Ar) ratios ranging from 10 to 40%. X-ray diffraction (XRD) confirmed the formation of a hexagonal wurtzite ZnO phase, with the O2/(O2 + Ar) ratio significantly influencing crystallinity and growth orientation. Optimal structural quality was achieved at a ratio of approximately 20%. Energy-dispersive X-ray spectroscopy (EDS) and scanning electron microscopy (SEM) revealed improved stoichiometry and the development of a columnar microstructure with increasing O2/(O2 + Ar) ratio. Atomic force microscopy (AFM) showed a pronounced reduction in surface roughness, reaching a minimum at 20–25%. Optical transmittance peaked at 84.25% for films deposited at a 25% O2/(O2 + Ar) ratio, accompanied by a direct optical band gap of ~ 3.14 eV. Photoluminescence (PL) spectra showed enhanced near-band-edge UV emission and diminished defect-related visible emissions under optimal oxygen conditions. Electrical measurements indicated increasing resistivity and decreasing carrier concentration with higher O2/(O2 + Ar) ratios. Maximum Hall mobility and figure of merit were observed at a 25% O2/(O2 + Ar) ratio. These findings highlight the crucial role of oxygen content in the plasma gas mixture for tailoring ZnOx thin films toward advanced optoelectronic applications.

在本研究中,采用射频磁控溅射法在不同的氧分压下沉积了ZnOx薄膜,O2/(O2 + Ar)比在10 ~ 40%之间。x射线衍射(XRD)证实了六方纤锌矿ZnO相的形成,O2/(O2 + Ar)比对结晶度和生长取向有显著影响。最佳结构质量达到了约20%的比率。能量色散x射线能谱(EDS)和扫描电镜(SEM)分析表明,随着O2/(O2 + Ar)比的增加,化学计量学的改善和柱状微观结构的发展。原子力显微镜(AFM)显示表面粗糙度显著降低,达到最小值20-25%。当O2/(O2 + Ar)比为25%时,薄膜的透光率达到84.25%,直接带隙为~ 3.14 eV。光致发光(PL)光谱显示,在最佳氧条件下,近带边紫外发射增强,缺陷相关可见发射减弱。电学测量表明,O2/(O2 + Ar)比值越高,载流子浓度越低,电阻率越高。在O2/(O2 + Ar)比为25%时观察到最大霍尔迁移率和优值。这些发现强调了氧含量在等离子体气体混合物中对定制ZnOx薄膜的关键作用,以实现先进的光电应用。
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引用次数: 0
Effects of aluminum content and purge time on optoelectronic properties of ALD AZO films 铝含量和吹扫时间对ALD AZO薄膜光电性能的影响
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-18 DOI: 10.1007/s10854-025-16389-0
Yehua Tang, Pengbo Yang, Hao Zhao, Ke-Fan Wang

Aluminum (Al)-doped zinc oxide (AZO) films were prepared via atomic layer deposition at 250 °C to explore the impact of Al content on their optical, structural, and electrical characteristics. X-ray diffraction patterns indicated that the films crystallized in a hexagonal wurtzite phase exhibiting prominent diffraction peaks corresponding to the (100), (002), and (101) planes. Among these, the (002) plane was the preferred orientation, suggesting that the AZO films possessed a strong c-axis alignment perpendicular to the substrate. With increasing Al dopant concentration, all diffraction peaks exhibited a systematic shift toward higher angles, accompanied by a reduction in crystallinity. This adverse effect, however, was effectively mitigated by extending the purge duration during deposition. Following parameter optimization, the resulting AZO film demonstrated an impressively low resistivity (~ 1.90 × 10−4 Ω cm), together with significant enhancements of approximately 13% in carrier concentration and 11% in carrier mobility.

采用250℃原子层沉积法制备了掺杂铝(Al)的氧化锌(AZO)薄膜,探讨了Al含量对其光学、结构和电学特性的影响。x射线衍射图表明,薄膜结晶为六方纤锌矿相,在(100)、(002)和(101)面有明显的衍射峰。其中,(002)平面为首选取向,表明AZO薄膜具有较强的垂直于衬底的c轴取向。随着Al掺杂浓度的增加,所有衍射峰都呈现出向更高角度的系统位移,同时结晶度降低。然而,通过延长沉积过程中的吹扫时间,可以有效地减轻这种不利影响。经过参数优化后,得到的AZO膜具有非常低的电阻率(~ 1.90 × 10−4 Ω cm),载流子浓度显著提高约13%,载流子迁移率显著提高11%。
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引用次数: 0
Finite size effect on structural, morphological, magnetic, and magneto-optical properties of Fe3O4 based nanofluids 有限尺寸对Fe3O4基纳米流体结构、形态、磁性和磁光性质的影响
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-18 DOI: 10.1007/s10854-025-16353-y
Punit Tomar, Sarvendra Kumar, Jitendra Kumar, SP Singh, RP Pant

Present work deals to investigate the effect of finite-size particles pertaining to structural, morphological, magnetic, and magneto-optical behaviour. The structural, morphological, and magnetic investigation were done using XRD, Transmission electron microscopy (TEM) and vibration sample magnetometer (VSM) techniques, respectively. The particle size varies in the range of 7 to 15 nm. The dislocation density of atoms and strain varies with the particle size. A focused study on the magneto-optical tunability with intensity-induced refractive index was examined using novel in-house magneto-optical experimental technique at 25°C. The nonlinear refractive index coefficient is found to be of the order of 10−3. Also, size and concentration-dependent variation of nonlinear refractive index coefficient is observed. Significant optical multiple diffraction rings of the fluid under green laser illumination with different size and concentrations were observed. The sample with 1% concentration has the best limiting effect among the other two concentrations. Field-induced anisotropy and modulating magneto-optical response profiles in nanomagnetic fluid shows the potential application in magnetic sensors, magneto-optical switches, optical limiters, etc.

目前的工作是研究有限尺寸粒子对结构、形态、磁性和磁光行为的影响。采用x射线衍射(XRD)、透射电镜(TEM)和振动样品磁强计(VSM)技术对其进行了结构、形态和磁性研究。粒径范围在7 ~ 15nm之间。原子的位错密度和应变随晶粒大小而变化。采用新颖的室内磁光实验技术,在25°C条件下,对光强诱导折射率的磁光可调性进行了重点研究。非线性折射率系数约为10−3数量级。此外,还观察到非线性折射率系数随浓度和尺寸的变化。在不同尺寸和浓度的绿色激光照射下,观察到流体的明显的光学多重衍射环。在其他两种浓度中,浓度为1%的样品限制效果最好。纳米磁流体中的场致各向异性和调制磁光响应曲线在磁传感器、磁光开关、光限制器等方面具有潜在的应用前景。
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引用次数: 0
Effects of sulfur content on the superconducting properties of PbMo6Sx superconductors 硫含量对PbMo6Sx超导体超导性能的影响
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-18 DOI: 10.1007/s10854-025-16370-x
Botao Shao, Lingfeng Ling, Guobiao Kang, Jixing Liu, Shengnan Zhang, Jianfeng Li, Pingxiang Zhang

As a typical superconducting material, PbMo6S8 (PMS) exhibits many advantages, such as high critical field, low fabrication cost, etc. Therefore, it has attracted the attention of researchers. With in its lattice, sulfide plays a pivotal role in the phase composition, microstructure, as well as superconducting properties. In this study, PbMo6Sx bulks with different S content have been successfully synthesized using the solid-state sintering method. It reveals that single phase PMS can be achieved within the S content of 7.8–8.0. And Pb, Mo and MoS2, Pb appear respectively, when the S content was deficient or excessive. Furthermore, variations in S content influence the superconducting transition temperature (Tc) and the flux pinning force density (Fp) of PbMo6Sx samples, which consequently results in alterations to the critical current density (Jc). With the S content of 7.8, the maximum Tc value of 12.5 K and the highest critical current density (Jc) of over 30 kA/cm2 were obtained. This work proves that with the optimization of fabrication process, PMS with high superconducting properties can be achieved as promising practical superconductors.

作为一种典型的超导材料,PbMo6S8 (PMS)具有高临界场、低制造成本等优点。因此,引起了研究人员的关注。在其晶格中,硫化物在相组成、微观结构和超导性能中起着关键作用。本研究采用固相烧结法成功合成了不同S含量的PbMo6Sx块体。结果表明,在S含量为7.8 ~ 8.0的范围内可以实现单相PMS。当S含量不足或过高时,分别出现Pb、Mo和MoS2、Pb。此外,S含量的变化会影响PbMo6Sx样品的超导转变温度(Tc)和磁通钉钉力密度(Fp),从而导致临界电流密度(Jc)的变化。S含量为7.8时,最大Tc值为12.5 K,最高临界电流密度(Jc)大于30 kA/cm2。本工作证明,通过优化制备工艺,可以实现具有高超导性能的PMS,成为有前途的实用超导体。
{"title":"Effects of sulfur content on the superconducting properties of PbMo6Sx superconductors","authors":"Botao Shao,&nbsp;Lingfeng Ling,&nbsp;Guobiao Kang,&nbsp;Jixing Liu,&nbsp;Shengnan Zhang,&nbsp;Jianfeng Li,&nbsp;Pingxiang Zhang","doi":"10.1007/s10854-025-16370-x","DOIUrl":"10.1007/s10854-025-16370-x","url":null,"abstract":"<div><p>As a typical superconducting material, PbMo<sub>6</sub>S<sub>8</sub> (PMS) exhibits many advantages, such as high critical field, low fabrication cost, etc. Therefore, it has attracted the attention of researchers. With in its lattice, sulfide plays a pivotal role in the phase composition, microstructure, as well as superconducting properties. In this study, PbMo<sub>6</sub>S<sub><i>x</i></sub> bulks with different S content have been successfully synthesized using the solid-state sintering method. It reveals that single phase PMS can be achieved within the S content of 7.8–8.0. And Pb, Mo and MoS<sub>2</sub>, Pb appear respectively, when the S content was deficient or excessive. Furthermore, variations in S content influence the superconducting transition temperature (<i>T</i><sub>c</sub>) and the flux pinning force density (<i>F</i><sub>p</sub>) of PbMo<sub>6</sub>S<sub><i>x</i></sub> samples, which consequently results in alterations to the critical current density (<i>J</i><sub>c</sub>). With the S content of 7.8, the maximum <i>T</i><sub>c</sub> value of 12.5 K and the highest critical current density (<i>J</i><sub>c</sub>) of over 30 kA/cm<sup>2</sup> were obtained. This work proves that with the optimization of fabrication process, PMS with high superconducting properties can be achieved as promising practical superconductors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 36","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145778822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ni-Zn bimetallic metal–organic frameworks (Bi-MOFs) as novel saturable absorbers in Q-switched erbium-doped fiber lasers Ni-Zn双金属金属有机骨架(Bi-MOFs)作为调q掺铒光纤激光器中的新型可饱和吸收材料
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-18 DOI: 10.1007/s10854-025-16405-3
Shahid Sadiq, Javed Iqbal, Tahani. A. Alrebdi, Summayya Batool,  Saddam, Haroon Asghar

In this study, we synthesized Ni-Zn bimetallic metal–organic frameworks (Bi-MOFs) and first investigated their performance as saturable absorbers (SAs) in passively Q-switched erbium-doped fiber lasers (EDFLs). Two samples of Ni-Zn Bi-MOF-SAs were synthesized using two distinct organic linkers: methyl-imidazole (MIM) and benzene-1,3,5-tricarboxylic acid (BTC). The prepared materials were characterized using X-ray diffraction (XRD) to determine their structural properties and Fourier-transform infrared spectroscopy (FTIR) to identify the functional groups. Field-emission scanning electron microscopy (FE-SEM) revealed well-defined microcrystalline morphologies, while EDX spectra and elemental mapping confirmed the uniform elemental composition and homogeneous distribution within the prepared Ni–Zn Bi-MOF samples. The prepared MIM and BTC linker-based Ni-Zn Bi-MOFs yielded a modulation depth of 11.28% and 6.65%, respectively. Once prepared, SAs integrated within the laser cavity, the measured experimental results showed that the EDFL with the MIM-based Ni-Zn Bi-MOF-SA achieved an emission wavelength of 1559.88 nm, a repetition rate of 121 kHz, a pulse width of 3.98 μs, and an average output power of 2.55 mW at a maximum pump power of 312.5 mW. In contrast, the EDFL with the BTC-based Ni-Zn Bi-MOF-SA generated an emission wavelength of 1560.12 nm, a repetition rate of 75.3 kHz, a pulse width of 6 μs, and an average output power of 4.55 mW at the same pump power. Furthermore, the stability of both MIM- and BTC-based Ni-Zn Bi-MOF-SAs was evaluated for one hour at a fixed pump power of 104.6 mW. Measurements of average power, repetition rate, and pulse width during stability testing confirmed the reliability and robustness of the Ni-Zn Bi-MOF-SAs. This study demonstrates that the Ni-Zn Bi-MOFs are well-suited SAs for pulsed laser sources, highlighting their potential in telecommunications and material processing.

在这项研究中,我们合成了Ni-Zn双金属金属有机框架(Bi-MOFs),并首次研究了它们作为可饱和吸收剂(SAs)在被动调q掺铒光纤激光器(edfl)中的性能。采用两种不同的有机连接剂:甲基咪唑(MIM)和苯-1,3,5-三羧酸(BTC)合成了两种Ni-Zn Bi-MOF-SAs样品。利用x射线衍射(XRD)和傅里叶变换红外光谱(FTIR)对所制备的材料进行表征,确定其结构性质。场发射扫描电镜(FE-SEM)显示了明确的微晶形貌,而EDX光谱和元素映射证实了Ni-Zn Bi-MOF样品的元素组成和分布均匀。所制备的基于MIM和BTC连接剂的Ni-Zn bi - mof的调制深度分别为11.28%和6.65%。实验结果表明,在最大泵浦功率为312.5 mW时,基于mim的Ni-Zn Bi-MOF-SA的EDFL的发射波长为1559.88 nm,重复频率为121 kHz,脉冲宽度为3.98 μs,平均输出功率为2.55 mW。在相同泵浦功率下,基于btc的Ni-Zn Bi-MOF-SA的EDFL产生的发射波长为1560.12 nm,重复频率为75.3 kHz,脉冲宽度为6 μs,平均输出功率为4.55 mW。此外,在104.6 mW的固定泵浦功率下,对MIM-和btc - Ni-Zn bi - mof - sa的稳定性进行了评价。稳定性测试期间的平均功率、重复频率和脉冲宽度测量证实了Ni-Zn bi - mof - sa的可靠性和稳健性。该研究表明,Ni-Zn bi - mof非常适合用于脉冲激光源,突出了它们在电信和材料加工方面的潜力。
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引用次数: 0
Electrocaloric and energy storage properties of lead-free Na0.5Bi0.5Ti0.6Hf0.4O3 ferroelectric ceramics for sustainable energy solutions are affected by the sintering temperatures 无铅Na0.5Bi0.5Ti0.6Hf0.4O3铁电陶瓷的电热性能和储能性能受烧结温度的影响
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-17 DOI: 10.1007/s10854-025-16400-8
Kuppam Mohan Babu, K. Vijaya Lakshmi, PandiSreenivasa Rao, P. Sobhanachalam, R. Santhosh Kumar, M. Gnana Kiran, V. Rajesh, B. Venkateswarlu, P. Mohan Babu, Ramanaiah Malla

Ferroelectric materials are widely regarded as promising candidates for sustainable energy technologies, particularly in solid-state cooling and energy storage applications. In this work, the microstructural, dielectric, electrocaloric, and energy storage properties of Na0.5Bi0.5Hf0.4Ti0.6O3 (NBHT) ceramics were systematically investigated. X-ray diffraction (XRD) analysis confirmed the coexistence of monoclinic and tetragonal phases, with an enhanced tetragonal contribution observed at higher sintering temperatures. Increasing the sintering temperature facilitated grain growth, improved densification, and significantly enhanced the dielectric and ferroelectric responses. The NBHT ceramic sintered at 1100 °C exhibited a maximum electrocaloric temperature change (ΔT) of 0.35 K and a recoverable energy density (Wrec) of 1.32 J cm−3 with an energy efficiency of approximately 80% at 120 °C. In contrast, the sample sintered at 1200 °C demonstrated a Wrec of 1.56 J cm−3 and high efficiency of 80% under an applied electric field of 40 kV cm−1. These findings reveal that the NBHT ceramics exhibit a strong electrocaloric effect coupled with excellent energy storage performance, underscoring their potential as lead-free ferroelectric materials for next-generation solid-state cooling and energy storage devices.

铁电材料被广泛认为是可持续能源技术的有前途的候选者,特别是在固态冷却和储能应用方面。本文系统地研究了Na0.5Bi0.5Hf0.4Ti0.6O3 (NBHT)陶瓷的显微结构、介电性能、电热性能和储能性能。x射线衍射(XRD)分析证实了单斜相和四方相共存,在较高的烧结温度下观察到四方相的贡献增强。提高烧结温度有利于晶粒生长,改善致密化,并显著提高介电和铁电响应。1100℃烧结的NBHT陶瓷在120℃下的最大电热温度变化(ΔT)为0.35 K,可回收能量密度(Wrec)为1.32 J cm−3,能量效率约为80%。相比之下,在1200°C下烧结的样品在40 kV cm−1的外加电场下,Wrec为1.56 J cm−3,效率高达80%。这些发现表明,NBHT陶瓷具有强大的电热效应和优异的储能性能,强调了其作为下一代固态冷却和储能器件的无铅铁电材料的潜力。
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引用次数: 0
Crystallite size and property tuning of SnO₂ thin films via precursor molarity control in sol–gel dip coating 溶胶-凝胶浸镀中控制前驱体摩尔浓度对sno2薄膜晶粒大小和性能的影响
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-17 DOI: 10.1007/s10854-025-16392-5
O. Slimi, D. Djouadi, M. Meddouri, S. Ouhenia, A. Chelouche

SnO₂ thin films were prepared using a dip-coating sol–gel process on the glass substrates with different precursor molar concentrations (0.3, 0.6, 0.8 and 1 M). X-ray diffraction (XRD) analysis showed that all samples are polycrystalline and crystallize in a tetragonal rutile structure. With the increase of the molarity, the crystallite size increased. The molarity strongly dictates the film texture, with clear changes in the preferred growth orientation (quantified by ({text{TC}}_{text{hkl}})).UV–visible optical measurements indicated that all films are highly transparent (∼ 84–87% in the visible region) upon annealing at 500 °C. The optical band gap exhibited an apparent blue shift up to a concentration of 0.6 M, reaching a value of 3.82 eV, followed by a slight decrease at higher concentrations. It is noteworthy that a minimum refractive index of 2.133 was also observed at the same concentration. AFM analysis shows that the 0.6 M film presents the lowest surface roughness, a condition that correlates with the maximum band gap and reduced light scattering at low molarities transmittance. Room temperature photoluminescence studies showed broad UV emission with intensity being dependent on the molarity of the precursors. Hall Effect measurement revealed an n-type conduction for all samples. Among them, the 0.6 M-prepared film showed the lowest resistivity (0.186 Ω·cm), the highest conductivity (5.56 (Ω·cm) ⁻1) and the best figure of merit (4.9 × 10⁻5Ω1). Finally, The 0.6 M film has been identified as a sweet spot that compromises on nanostructures, wide bandgap, high transparency, and excellent optoelectronic performances, rendering it a promising candidate for transparent electronics and optoelectronics.

采用溶胶-凝胶浸渍法制备了不同前驱体摩尔浓度(0.3、0.6、0.8和1 M)的SnO 2薄膜。x射线衍射(XRD)分析表明,所有样品均为多晶,结晶为四方金红石结构。随着摩尔浓度的增加,晶粒尺寸增大。摩尔浓度强烈地决定了薄膜的织构,在首选生长方向上有明显的变化(通过({text{TC}}_{text{hkl}}))量化)。紫外可见光学测量表明,所有薄膜都是高度透明的(~ 84-87)% in the visible region) upon annealing at 500 °C. The optical band gap exhibited an apparent blue shift up to a concentration of 0.6 M, reaching a value of 3.82 eV, followed by a slight decrease at higher concentrations. It is noteworthy that a minimum refractive index of 2.133 was also observed at the same concentration. AFM analysis shows that the 0.6 M film presents the lowest surface roughness, a condition that correlates with the maximum band gap and reduced light scattering at low molarities transmittance. Room temperature photoluminescence studies showed broad UV emission with intensity being dependent on the molarity of the precursors. Hall Effect measurement revealed an n-type conduction for all samples. Among them, the 0.6 M-prepared film showed the lowest resistivity (0.186 Ω·cm), the highest conductivity (5.56 (Ω·cm) ⁻1) and the best figure of merit (4.9 × 10⁻5Ω⁻1). Finally, The 0.6 M film has been identified as a sweet spot that compromises on nanostructures, wide bandgap, high transparency, and excellent optoelectronic performances, rendering it a promising candidate for transparent electronics and optoelectronics.
{"title":"Crystallite size and property tuning of SnO₂ thin films via precursor molarity control in sol–gel dip coating","authors":"O. Slimi,&nbsp;D. Djouadi,&nbsp;M. Meddouri,&nbsp;S. Ouhenia,&nbsp;A. Chelouche","doi":"10.1007/s10854-025-16392-5","DOIUrl":"10.1007/s10854-025-16392-5","url":null,"abstract":"<div><p>SnO₂ thin films were prepared using a dip-coating sol–gel process on the glass substrates with different precursor molar concentrations (0.3, 0.6, 0.8 and 1 M). X-ray diffraction (XRD) analysis showed that all samples are polycrystalline and crystallize in a tetragonal rutile structure. With the increase of the molarity, the crystallite size increased. The molarity strongly dictates the film texture, with clear changes in the preferred growth orientation (quantified by <span>({text{TC}}_{text{hkl}}))</span>.UV–visible optical measurements indicated that all films are highly transparent (∼ 84–87% in the visible region) upon annealing at 500 °C. The optical band gap exhibited an apparent blue shift up to a concentration of 0.6 M, reaching a value of 3.82 eV, followed by a slight decrease at higher concentrations. It is noteworthy that a minimum refractive index of 2.133 was also observed at the same concentration. AFM analysis shows that the 0.6 M film presents the lowest surface roughness, a condition that correlates with the maximum band gap and reduced light scattering at low molarities transmittance. Room temperature photoluminescence studies showed broad UV emission with intensity being dependent on the molarity of the precursors. Hall Effect measurement revealed an n-type conduction for all samples. Among them, the 0.6 M-prepared film showed the lowest resistivity (0.186 <i>Ω</i>·cm), the highest conductivity (5.56 (<i>Ω</i>·cm) ⁻<sup>1</sup>) and the best figure of merit (4.9 × 10⁻<sup>5</sup><i>Ω</i>⁻<sup>1</sup>). Finally, The 0.6 M film has been identified as a sweet spot that compromises on nanostructures, wide bandgap, high transparency, and excellent optoelectronic performances, rendering it a promising candidate for transparent electronics and optoelectronics.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 36","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145778658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimising magnetocaloric properties of LaFe11.2Si1.8 ribbons via annealing: a pathway to high-performance magnetic refrigeration 通过退火优化LaFe11.2Si1.8带的磁热性能:实现高性能磁制冷的途径
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-17 DOI: 10.1007/s10854-025-16361-y
Anjana Vinod, Arvindha Babu Diraviam, Manivel Raja Muthuvel, Madhuri Wuppulluri

The advancement of effective and eco-friendly cooling technology is essential for tackling global energy sustainability and climate change issues. This work presents a thorough analysis of the magnetic phase transition and magnetocaloric effect in the as-cast and annealed LaFe11.2Si1.8 ribbons made via melt spinning, revealing the significant influence of annealing on their magnetic and magnetocaloric characteristics. Annealing dramatically modifies the structure by a rapid peritectic reaction, enhancing the volume fraction of the 1:13 phase and reducing the secondary phase, α-Fe phase. This leads to significant improvements in the Curie transition temperature, working temperature, and relative cooling power. The Curie transition temperature rises from 244 to 254 K, with the working temperature and relative cooling power enhancing by 236% and 592%, respectively. The findings emphasise the essential function of annealing in enhancing the magnetic characteristics of La(Fe,Si)13 compounds and highlight their promise for sustainable and efficient magnetic refrigeration.

高效、环保的冷却技术的进步对于解决全球能源可持续性和气候变化问题至关重要。本文对熔体纺丝制备的铸态和退火态LaFe11.2Si1.8带的磁相变和磁热效应进行了深入的分析,揭示了退火对其磁性和磁热特性的显著影响。退火通过快速的包晶反应显著地改变了结构,提高了1:13相的体积分数,减少了次级相α-Fe相。这导致了居里转变温度、工作温度和相对冷却功率的显著提高。居里转变温度从244 K提高到254 K,工作温度和相对冷却功率分别提高了236%和592%。研究结果强调了退火在增强La(Fe,Si)13化合物磁性特性方面的重要作用,并强调了它们在可持续和高效磁制冷方面的前景。
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Journal of Materials Science: Materials in Electronics
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