Journal of Materials Science: Materials in Electronics最新文献

In this study, PbI₂ nanoparticles have been doped in polyvinyl alcohol polymer (PVA) with different concentrations to form (PVA)_1−x(PbI₂)_x polymer nanocomposite films with x = 0.01, 0.02,0.03, and 0.04. The synthesized films were then characterized to investigate the effect of PbI₂ embedded nanoparticles on the properties of PVA. The structural properties were investigated by X-ray diffraction (XRD); the results show the successful incorporation of PbI₂ nanoparticles into the PVA polymer matrix. The intensity of the diffraction peaks increases with the increase of PbI₂ content, while lattice strain and distortions increase with increasing PbI₂ concentration. The morphology of the film surface was analyzed using a scanning electron microscope (SEM), while its elemental composition was studied using energy-dispersive X-ray (EDX) spectroscopy. The morphological study of the surfaces of the studied films revealed that surface roughness increased with the increase in PbI₂ concentration, accompanied by the formation of larger crystallites and more visible structural features. The optical direct and indirect bandgaps of PVA were found to decrease with the increase in PbI₂ dopants. Additionally, the thermogravimetric analysis (TGA) showed that the high surface interaction linkages between PbI₂ and PVA, which are brought about by hydrogen bonding between the two materials, are responsible for the observed improvement in thermal stability. Furthermore, the Phy-X/PSD and XCOM programs were used to determine gamma-shielding properties at various energy ranges. The results show good agreement between the two programs. Additionally, the values of MAC for (PVA)_1−x(PbI₂)_x nanocomposites are increased with increasing PbI₂ contents. HVL decreases with an increase in the PbI₂ doping. This confirms that x = 0.04 is the most effective shielding material.

Nanorods (NRs) have gained prominence in technological development based on the surface area and composition due to tunable physical and chemical properties. In this paper, the kesterite phase of CZTS nanorods has been synthesized for photo-electrochemical application. CZTS is low cost, earth abundant, environmental friendly, and non-toxic material. X-ray diffraction (XRD) pattern and Raman spectra confirm the presence of stable Kesterite phase without any secondary/ternary phases. Field emission scanning electron microscopy (FESEM) revealed that the CZTS nanorods were 138–200 nm long and 27–50 nm in diameter. Energy-dispersive spectroscopy (EDS) showed their elemental ratio to be Cu:Zn:Sn:S = 1.80 : 0.90 : 0.85 : 3.65. Photocurrent density of 1.01 mA/cm² at 0 V vs. RHE (Reversible hydrogen electrode) under light illumination was observed when used as photoelectrode in PEC cell. The prepared photoelectrode provides acceptor carrier concentration around N_a = 7.48 X10²⁰ cm⁻³ with flat band potential 0.74 V from Mott–Schottky response and overall superior electrochemical catalytic ability from impedance analysis. The prepared NRs are quantitatively more efficient for PEC applications than previously reported nanostructures of CZTS.

Amorphous oxide semiconductors (AOSs) are emerging as strong alternatives to silicon-based materials due to their high field-effect mobility, low processing temperatures, simple fabrication, and high optical transmittance. In this study, we investigated the influence of different oxygen vacancy suppressors—gallium (Ga), aluminum (Al), and hafnium (Hf)—on the electrical performance of amorphous Zn-Sn–O (a-ZTO) thin-film transistors (TFTs). These suppressors were selected for their varying oxygen-binding energies: Ga-O (285 kJ/mol), Al-O (512 kJ/mol), and Hf–O (791 kJ/mol). Our results show that higher binding energies lead to a reduction in oxygen vacancies, thereby improving device stability but lowering carrier concentration. Among the three, Ga-doped ZTO (GZTO) exhibited the highest field-effect mobility of 19.8 cm²/V·s, while Hf-doped ZTO (HZTO) showed superior stability under thermal and bias stress tests. These findings highlight the critical role of oxygen vacancy suppressor chemistry in tuning the electrical properties of AOS TFTs and demonstrate their potential for application in n-type logic circuits and next-generation electronics.

The creation of thermally conductive pathways in polymers is crucial for achieving high thermal conductivity in composites. In this study, a novel ultrafine and ultrathin-walled boron nitride hollow nanotube (BNNT) was employed to fabricate two types of 3D-BNNT/EP composites, 3D-BNNT/EP-p and 3D-BNNT/EP-f, prepared via powder hybrid compression molding and ice-templating methods, respectively. The experimental results show that the 3D-BNNT/EP-p composites exhibit high performance at high BNNT loading (55.87 wt%). The in-plane thermal conductivity reached 1.091 W/(m K), representing a 590% enhancement over pure epoxy resin (0.185 W/(m K)), while the T_60% decomposition temperature increased by 63 °C, indicating superior thermal conductivity and stability. Practical application tests reveal that this material can reduce the maximum operating temperature of LED devices by 11.3 °C, demonstrating its heat dissipation advantages. In contrast, the ice-templated composites showed higher filler efficiency at low BNNT loading (10.18 wt%), achieving an 89% improvement in in-plane thermal conductivity. However, their 3D network contained CMC-Na binder, leading to discontinuous thermal pathways and only a 24 °C improvement in thermal stability. Dielectric property measurements confirmed that both types of composites maintained the low-dielectric characteristics of the epoxy matrix, with the compression-molded samples exhibiting more stable dielectric loss behavior at high frequencies. Finite element simulations verified the thermal enhancement mechanism of 3D-BNNT networks and highlighted the impact of processing methods on performance. These findings provide both a theoretical foundation and practical guidance for the selection and design of high-performance thermal management materials in advanced electronic and optoelectronic devices.

Ruthenium-based complexes demonstrate high potential in the catalysation of the electrochemical oxidation of glucose, offering high sensitivity and stability in glucose detection. In this study, a ruthenium complex (Ru1) was synthesised using 2,2′-bipyridine-4,4′-dicarboxylic acid (DCBpy), potassium iodide (KI) and [RuCl₂(p-cymene)]₂. The structural properties of Ru1 were investigated using X-ray diffraction (XRD), nuclear magnetic resonance (NMR), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and UV–vis spectroscopy analyses, which revealed its structure. The electrochemical behaviour of the Ru1 complex was systematically investigated and found to be promising for application in a glucose biosensor. Cyclic voltammetry measurements revealed an increase in electrochemical activity on the electrode surface over time, showing a steady rise at a potential of 0.32 V. This indicates high sensitivity and reliability in glucose detection. Chronoamperometric analysis showed a linear response to glucose concentrations ranging from 0.1 to 0.8 mM, demonstrating the sensor's sensitivity. These properties make the Ru1 complex a promising candidate for use in glucose detection biosensors. In conclusion, the complex's electrocatalytic activity and stability could be key to advancing biosensor technologies by enhancing sensitivity.

This study investigates the structural, microstructural, and functional properties of (1 − x)(Ba_0.85Ca_0.15)(Zr_0.1Ti_0.9)O₃–xNi_0.6Zn_0.4Fe₂O₄ (x = 0, 0.05, 0.1, 0.2, 0.3, 0.4, 0.5, and 1) ceramic samples synthesized via the solid-state reaction method. X-ray diffraction (XRD) and Raman spectroscopy confirmed the coexistence of perovskite (BCZT) and spinel (NZF) phases, while diffusion of elements was observed through energy-dispersive X-ray spectroscopy (EDS). This diffusion led to an increase in the Curie temperature of the perovskite phase with the addition of ferrite. Dielectric relaxation shifted to lower temperatures with increasing NZF content, whereas the magnetoelectric coupling coefficient (α_ME) increased, reaching up to 1.24 mV/cm·Oe for 0.6BCZT–0.4NZF under a 32 Oe AC field. This work highlights the role of phase interactions in tuning multifunctional properties, positioning these composites as promising candidates for magnetoelectric sensors and energy conversion devices.

In this study, an orthogonal experiment was fulfilled to reveal the synergistic effect of main brazing parameters on the microstructure and performance of the active metal brazing (AMB) Cu-metalized Si₃N₄ substrates. Effects of brazing temperature, holding time, and filler-layer thickness on the microstructure and peeling strength of the substrates were also investigated. Moreover, a modified thermodynamic calculation was executed to describe the solder layer/Si₃N₄ substrate interfacial reactions more accurately. The results show that the brazing temperature has the most significant influence on the peeling strength of the substrates. After brazing at 830 °C for 60 min with a filler-layer thickness of 60 μm, the substrates have the highest peeling strength and rather low porosity. The solder layer/Si₃N₄ interfacial reaction produces TiN and Ti₅Si₃, but the generation of TiN is more thermodynamically favored. The continuous TiN layer and uniformly distributed Ti₅Si₃ particles in the solder layer are beneficial to the improvement of the peeling strength of the substrates. However, the excessive solder/Si₃N₄ interfacial reaction degrades the performance of the substrates.

An attempt has been made here to synthesize K₂NiF₄-type Sr₂(Ce_1-yTi_y)O₄ (y = 0–1.0) oxides and characterise them with regard to structure, bond length/angles, Raman spectra, and electric characteristics. It exhibits an orthorhombic to tetragonal structural transformation with titanium. Both average cell volume and bond length decrease as ~ 228.21–190.06 ų and ~ 2.715–2.311 Å, respectively with titanium. Raman modes at ~ 287 and 385 cm⁻¹ correspond to Ce–O₂ and Ce–O₁ bond stretching, respectively for y = 0 composition. The modes at ~ 122 and 204 cm⁻¹ are associated with strontium ion vibrations, while those at ~ 284 and 575 cm⁻¹ correspond to oxygen ion vibrations. Bands ~ 413 and 756 cm⁻¹ are attributed to second-order bands or oxygen sublattice defects. Particularly, full with half maxima (FWHM) of the mode at 553 cm⁻¹ decreases with titanium content—attributed to the reduction in degree of distortion of (Ce/Ti)O₆ octahedra. An absorption band at ~ 860 cm⁻¹ is assigned to Ti–O bond stretching in TiO₆ octahedra for Sr₂TiO₄. The highest dielectric constant is found to be ~ 44.76 at 100 kHz frequency for y = 1. The dielectric loss decreases as 4 × 10^–3–2 × 10^–3 at a frequency of 100 kHz with titanium. Dielectric anomaly is observed at higher temperature, associated with the space charge and defects related to oxygen vacancies. The activation energies have been calculated as ~ 0.84–0.95 eV and increase with titanium. These characteristics make materials applications in high-frequency device applications e.g., 5G communication technology and antenna.

This study introduces a novel microstructural design for Sn-3.5Ag-0.5Cu (SAC355) solder via the synergistic co-addition of 0.1 wt.% Ni and 3.0 wt.% Bi. The Ni-Bi combination fundamentally alters solidification kinetics, as experimental results confirm a 64% reduction in undercooling (from 17.1 to 6.1 °C) and a constricted pasty range of 6.7 °C. This is linked to (Cu,Ni)₆Sn₅ intermetallic compounds and Bi-rich boundaries acting as potent nucleation sites. Microstructurally, the synergy yields a refined matrix that suppresses coarse β-Sn dendrites and Ag₃Sn platelets. Crucially, ultrasonic analysis reveals a unique elastic property profile: Bi enhances damage tolerance (Poisson’s ratio, υ = 0.329), while Ni induces solid-solution softening, reducing Young’s modulus (E = 121.6 GPa) and shear modulus (G = 37.4 GPa). This combination of microstructural refinement and optimized elastic constants collectively impedes crack propagation under stress, providing a transformative framework for high-reliability lead-free solders in demanding applications.

High-quality, defect – free single crystals of piperazinium oxalate monohydrate (POM) were successfully synthesized via the slow evaporation technique at ambient temperature. The crystal structure, elucidated through single crystal X-ray diffraction (SXRD), reveals a monoclinic crystal system with a space group of P_21/c, comprising an asymmetric unit with one water molecule, one oxalate anion, and two half—piperazinium cations. Both cations adopt a stable chair conformation, with the overall crystal structure stabilized by intricate intra-and inter molecular O–H…O and N–H…O hydrogen bonding interactions. FESEM and HRTEM analysis gives detailed morphology of the crystal. Structural insights indicate the hydrogen bonding network fosters the formation of a sophisticated supramolecular architecture, while FTIR spectral analysis confirms the presence of characteristic functional groups within the crystal. Optical properties demonstrate exceptional optical transparency, with a remarkable 94% transmittance and an optical band gap of 3.5 eV, indicative of the crystal’s potential for photonic applications. Photoluminescence studies reveal the emission intensity of the grown crystal through fluorescence and chromaticity diagram studies, further highlighting its optical prowess. Mechanical stability is assessed through Vickers microhardness testing, while TG/DTA analysis elucidates thermal properties of the crystal, ensuring stability under various conditions. Hirshfeld surface analysis substantiates the significance of intermolecular interactions in enhancing the nonlinear optical activity (NLO) of POM. Nonlinear optical performance, evaluated through Z-scan analysis, reveals a notable nonlinear susceptibility of 3.5421 × 10^–6 esu and a nonlinear absorption coefficient of − 5.258 × 10⁻⁶ m/W, underscoring POM’s excellent NLO quality compared to related compounds. Molecular docking studies fascinatingly demonstrate the antiviral character of the POM crystal, expanding its potential applications beyond optics.