首页 > 最新文献

Journal of Materials Science: Materials in Electronics最新文献

英文 中文
Correction to: Tunable electrode-dependent switching characteristics of Se–Te–In chalcogenide thin films
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-02-24 DOI: 10.1007/s10854-025-14359-0
Sindhur Joshi, N. K. Udayashankar
{"title":"Correction to: Tunable electrode-dependent switching characteristics of Se–Te–In chalcogenide thin films","authors":"Sindhur Joshi, N. K. Udayashankar","doi":"10.1007/s10854-025-14359-0","DOIUrl":"10.1007/s10854-025-14359-0","url":null,"abstract":"","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143475281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microelectronic properties of VOPcPhO–({hbox {TiO}}_{2}) organic/inorganic hybrid nanocomposite-based Schottky barrier diode
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-02-24 DOI: 10.1007/s10854-025-14445-3
Asad Ullah Khan, Namra Hadi, Fida Muhammad, Sapna Rahman, Moamen S. Refat, Abdel Majid A. Adam, Amnah Mohammed Alsuhaibani, Q. Mohsen, Fazal Ahmad Khalid, Muhammad Tahir

This paper explores the potential application of titanium dioxide (({hbox {TiO}}_{2})) nanoparticles (NPs) to enhance the performance of Schottky barrier diode (SBD) made from vanadyl 2, 9, 16, 23-tetraphenoxy-29H, 31H-Phthalocyanine (VOPcPhO), a small-molecule organic semiconductor. The SBD is fabricated using a facile spin coating technique at ambient conditions by casting a 1:1 vol% blended suspension of VOPcPhO and ({hbox {TiO}}_{2}) NPs in chloroform on pre-deposited Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) on an indium tin oxide (ITO) substrate. To analyze the electronic properties of the fabricated device, current–voltage ((I{-}V)) measurements are performed at 25 (^{circ})C in dark conditions. The (I{-}V) characteristics of SBD displayed asymmetrical behavior with rectification ratio (RR) of 261 at ± 2.1 V for ITO/PEDOT:PSS/VOPcPhO–({hbox {TiO}}_{2})/Ag device which indicates the formation of a depletion region. Key electronic parameters such as charge carrier mobility ((mu)), barrier height ((phi _{text {b}})), series resistance (({R}_{text {s}})), and ideality factor (n) are derived from the (I{-}V) curves. Norde’s and Cheung’s methods are also used to verify the consistency of these parameters. Significant improvements in the values of ({R}_{text {s}}), n and RR are observed in ITO/PEDOT:PSS/VOPcPhO–({hbox {TiO}}_{2})/Ag device compared to many other Schottky barrier diodes (SBDs). This enhancement is attributed to the incorporation of ({hbox {TiO}}_{2}) nanoparticles which provide high surface-to-volume ratio. Additionally, the conduction mechanism in the fabricated device is analyzed by focusing on Poole–Frenkel and Richardson Schottky effects. The paper also reports Ultraviolet–Visible spectroscopy (UV–Vis) to obtain optical bandgaps (1.9 and 3.4 eV), morphology such as atomic force microscopy (AFM) and scanning electron microscopy (SEM) for high-resolution surface investigation, X-ray diffraction (XRD) for the determination of material’s crystallinity and Fourier transformed infrared (FTIR) for functional group analysis of VOPcPhO–({hbox {TiO}}_{2}) nanoparticles.

{"title":"Microelectronic properties of VOPcPhO–({hbox {TiO}}_{2}) organic/inorganic hybrid nanocomposite-based Schottky barrier diode","authors":"Asad Ullah Khan,&nbsp;Namra Hadi,&nbsp;Fida Muhammad,&nbsp;Sapna Rahman,&nbsp;Moamen S. Refat,&nbsp;Abdel Majid A. Adam,&nbsp;Amnah Mohammed Alsuhaibani,&nbsp;Q. Mohsen,&nbsp;Fazal Ahmad Khalid,&nbsp;Muhammad Tahir","doi":"10.1007/s10854-025-14445-3","DOIUrl":"10.1007/s10854-025-14445-3","url":null,"abstract":"<div><p>This paper explores the potential application of titanium dioxide (<span>({hbox {TiO}}_{2})</span>) nanoparticles (NPs) to enhance the performance of Schottky barrier diode (SBD) made from vanadyl 2, 9, 16, 23-tetraphenoxy-29<i>H</i>, 31<i>H</i>-Phthalocyanine (VOPcPhO), a small-molecule organic semiconductor. The SBD is fabricated using a facile spin coating technique at ambient conditions by casting a 1:1 vol% blended suspension of VOPcPhO and <span>({hbox {TiO}}_{2})</span> NPs in chloroform on pre-deposited Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) on an indium tin oxide (ITO) substrate. To analyze the electronic properties of the fabricated device, current–voltage (<span>(I{-}V)</span>) measurements are performed at 25 <span>(^{circ})</span>C in dark conditions. The <span>(I{-}V)</span> characteristics of SBD displayed asymmetrical behavior with rectification ratio (RR) of 261 at ± 2.1 V for ITO/PEDOT:PSS/VOPcPhO–<span>({hbox {TiO}}_{2})</span>/Ag device which indicates the formation of a depletion region. Key electronic parameters such as charge carrier mobility (<span>(mu)</span>), barrier height (<span>(phi _{text {b}})</span>), series resistance (<span>({R}_{text {s}})</span>), and ideality factor (<i>n</i>) are derived from the <span>(I{-}V)</span> curves. Norde’s and Cheung’s methods are also used to verify the consistency of these parameters. Significant improvements in the values of <span>({R}_{text {s}})</span>, <i>n</i> and RR are observed in ITO/PEDOT:PSS/VOPcPhO–<span>({hbox {TiO}}_{2})</span>/Ag device compared to many other Schottky barrier diodes (SBDs). This enhancement is attributed to the incorporation of <span>({hbox {TiO}}_{2})</span> nanoparticles which provide high surface-to-volume ratio. Additionally, the conduction mechanism in the fabricated device is analyzed by focusing on Poole–Frenkel and Richardson Schottky effects. The paper also reports Ultraviolet–Visible spectroscopy (UV–Vis) to obtain optical bandgaps (1.9 and 3.4 eV), morphology such as atomic force microscopy (AFM) and scanning electron microscopy (SEM) for high-resolution surface investigation, X-ray diffraction (XRD) for the determination of material’s crystallinity and Fourier transformed infrared (FTIR) for functional group analysis of VOPcPhO–<span>({hbox {TiO}}_{2})</span> nanoparticles.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143481127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reversible discoloration behavior of Bi2O2Se nanosheets in photoelectrochemical systems
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-02-24 DOI: 10.1007/s10854-025-14443-5
Silan Zhou, Nanyin Zhao, Jun Li

Electrochromic materials are substances that undergo the implantation or removal of electrons and ions in response to an electric field, which is redox reactions. These materials can change from one color to another and exhibit a reversible color change after a reverse voltage is applied. In this study, we report a novel material, Bi2O2Se, capable of both electrochromic and electrochemical energy storage. We successfully synthesized Bi2O2Se nanosheets using a hydrothermal method. Electrochemical tests on the Bi2O2Se nanosheets were conducted utilizing a three-electrode system at an electrochemical workstation. Under the influence of an electric field, the Bi2O2Se nanosheets transitioned from gray to yellow. This discoloration behavior was reversible upon applying reverse voltage, thereby exhibiting an electrochromic effect. Discharge at a voltage of 0 V after discoloration, resulting in reverse current generation. During this discharge process, the color of the Bi2O2Se electrode gradually recovers, exhibiting its energy storage capability. These findings suggest that Bi2O2Se nanosheets hold promise for potential applications that integrate both electrochromic functionality and energy storage capabilities. In the near future, they are likely to have a substantial impact on our daily lives.

{"title":"Reversible discoloration behavior of Bi2O2Se nanosheets in photoelectrochemical systems","authors":"Silan Zhou,&nbsp;Nanyin Zhao,&nbsp;Jun Li","doi":"10.1007/s10854-025-14443-5","DOIUrl":"10.1007/s10854-025-14443-5","url":null,"abstract":"<div><p>Electrochromic materials are substances that undergo the implantation or removal of electrons and ions in response to an electric field, which is redox reactions. These materials can change from one color to another and exhibit a reversible color change after a reverse voltage is applied. In this study, we report a novel material, Bi<sub>2</sub>O<sub>2</sub>Se, capable of both electrochromic and electrochemical energy storage. We successfully synthesized Bi<sub>2</sub>O<sub>2</sub>Se nanosheets using a hydrothermal method. Electrochemical tests on the Bi<sub>2</sub>O<sub>2</sub>Se nanosheets were conducted utilizing a three-electrode system at an electrochemical workstation. Under the influence of an electric field, the Bi<sub>2</sub>O<sub>2</sub>Se nanosheets transitioned from gray to yellow. This discoloration behavior was reversible upon applying reverse voltage, thereby exhibiting an electrochromic effect. Discharge at a voltage of 0 V after discoloration, resulting in reverse current generation. During this discharge process, the color of the Bi<sub>2</sub>O<sub>2</sub>Se electrode gradually recovers, exhibiting its energy storage capability. These findings suggest that Bi<sub>2</sub>O<sub>2</sub>Se nanosheets hold promise for potential applications that integrate both electrochromic functionality and energy storage capabilities. In the near future, they are likely to have a substantial impact on our daily lives.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143475278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural and electrical properties of NiMn2O4 ceramic by laser melting deposition
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-02-24 DOI: 10.1007/s10854-025-14472-0
Xianhai Liu, Wei Ren, Shujian Ding, Xiang Weng, Guanghui Liu, Weili Wang, Yanhan Yang

NiMn2O4 ceramics were successfully prepared by laser melting deposition method. The effects of the laser power on the microstructural and electrical properties of the ceramics were investigated. The average grain sizes of NiMn2O4 ceramics were in the range of 12.49–14.70 nm, and the microscopic morphology of the ceramics improves with the increase of laser power. With different laser power, the thermal constant B values of the ceramics vary from 3049.6 to 3400.7 K, and the aging coefficients of the ceramics change from 15.32 to 10.38%. The improvement in aging properties of ceramics was discussed.

{"title":"Structural and electrical properties of NiMn2O4 ceramic by laser melting deposition","authors":"Xianhai Liu,&nbsp;Wei Ren,&nbsp;Shujian Ding,&nbsp;Xiang Weng,&nbsp;Guanghui Liu,&nbsp;Weili Wang,&nbsp;Yanhan Yang","doi":"10.1007/s10854-025-14472-0","DOIUrl":"10.1007/s10854-025-14472-0","url":null,"abstract":"<div><p>NiMn<sub>2</sub>O<sub>4</sub> ceramics were successfully prepared by laser melting deposition method. The effects of the laser power on the microstructural and electrical properties of the ceramics were investigated. The average grain sizes of NiMn<sub>2</sub>O<sub>4</sub> ceramics were in the range of 12.49–14.70 nm, and the microscopic morphology of the ceramics improves with the increase of laser power. With different laser power, the thermal constant <i>B</i> values of the ceramics vary from 3049.6 to 3400.7 K, and the aging coefficients of the ceramics change from 15.32 to 10.38%. The improvement in aging properties of ceramics was discussed.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143481128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancement of Ag sintering reactions through high-density (111) orientation Ag nanotwins for the die bonding of SiC chips with DBC alumina substrates
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-02-24 DOI: 10.1007/s10854-025-14451-5
Yin-Hsuan Chen, Chun-Hao Chen, Devi Indrawati Syafei, Yen-Ting Chen, Che-Yuan Chang, Tung-Han Chuang

Ag sintering has become a preferred die bonding method for power IC packages due to its exceptional thermal, mechanical, and electrical properties. While it is widely recognized for its potential in high-power semiconductor applications, few research efforts have emerged that consider how the backside metallization films of the IC can enhance the sintering layer’s properties. This research focused on the enhancement of silver sintering for bonding of Cr/Ni/Ag and Cr/nanotwinned Ag-metallized film on silicon carbide (SiC) chips to direct bonded copper (DBC) substrates to investigate the beneficial effects of (111)-textured Ag nanotwinned films on the bonding strength increase and porosity reduction. Results reveal that the nanotwinned Ag films significantly reduce porosity and enhance bonding strength compared to conventional Cr/Ni/Ag films, under both pressurized and pressureless conditions. Implications for the improvements in reducing porosity and increasing bonding strength due to the nanotwin structure and further research are also discussed, opening new possibilities for advanced power electronic packaging technology.

{"title":"Enhancement of Ag sintering reactions through high-density (111) orientation Ag nanotwins for the die bonding of SiC chips with DBC alumina substrates","authors":"Yin-Hsuan Chen,&nbsp;Chun-Hao Chen,&nbsp;Devi Indrawati Syafei,&nbsp;Yen-Ting Chen,&nbsp;Che-Yuan Chang,&nbsp;Tung-Han Chuang","doi":"10.1007/s10854-025-14451-5","DOIUrl":"10.1007/s10854-025-14451-5","url":null,"abstract":"<div><p>Ag sintering has become a preferred die bonding method for power IC packages due to its exceptional thermal, mechanical, and electrical properties. While it is widely recognized for its potential in high-power semiconductor applications, few research efforts have emerged that consider how the backside metallization films of the IC can enhance the sintering layer’s properties. This research focused on the enhancement of silver sintering for bonding of Cr/Ni/Ag and Cr/nanotwinned Ag-metallized film on silicon carbide (SiC) chips to direct bonded copper (DBC) substrates to investigate the beneficial effects of (111)-textured Ag nanotwinned films on the bonding strength increase and porosity reduction. Results reveal that the nanotwinned Ag films significantly reduce porosity and enhance bonding strength compared to conventional Cr/Ni/Ag films, under both pressurized and pressureless conditions. Implications for the improvements in reducing porosity and increasing bonding strength due to the nanotwin structure and further research are also discussed, opening new possibilities for advanced power electronic packaging technology.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14451-5.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143481065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tailoring the properties of ZnO thin films by low energy ion beam interaction
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-02-24 DOI: 10.1007/s10854-025-14446-2
Sikta Mandal, Shushant Kumar Singh, Pravin Kumar, Udai P. Singh

Thin films of Zinc Oxide (ZnO) were fabricated using RF sputtering technique on glass as well as ITO substrates. Subsequently, the films were processed by low energy ion beams to modify their properties. The implantation of 200 keV Ni beam was carried out in ZnO films with various ion fluences ranging from 5 E15 to 2 E16 ions/cm2. Characterization of the as deposited and ion beam processed films employed various techniques. The FESEM imaging revealed that ZnO surfaces exhibited rupture indicative of ion incorporation. The XRD analysis highlighted distinct changes. The ZnO films showed enhanced crystallinity after ion implantation. The optical properties studied by UV–Vis Spectroscopy showed that the ion implanted ZnO films have highest transmittance of ~ 80%. As deduced from Hall measurements, the conductivity and carrier concentration in ZnO films increase with increasing the fluences, however, at highest ion fluence, these values decrease. These findings underscore the subtle impact of ion beam processes on semiconductor thin films, crucial for optimizing their performance in electronic applications.

{"title":"Tailoring the properties of ZnO thin films by low energy ion beam interaction","authors":"Sikta Mandal,&nbsp;Shushant Kumar Singh,&nbsp;Pravin Kumar,&nbsp;Udai P. Singh","doi":"10.1007/s10854-025-14446-2","DOIUrl":"10.1007/s10854-025-14446-2","url":null,"abstract":"<div><p>Thin films of Zinc Oxide (ZnO) were fabricated using RF sputtering technique on glass as well as ITO substrates. Subsequently, the films were processed by low energy ion beams to modify their properties. The implantation of 200 keV Ni<sup>−</sup> beam was carried out in ZnO films with various ion fluences ranging from 5 E15 to 2 E16 ions/cm<sup>2</sup>. Characterization of the as deposited and ion beam processed films employed various techniques. The FESEM imaging revealed that ZnO surfaces exhibited rupture indicative of ion incorporation. The XRD analysis highlighted distinct changes. The ZnO films showed enhanced crystallinity after ion implantation. The optical properties studied by UV–Vis Spectroscopy showed that the ion implanted ZnO films have highest transmittance of ~ 80%. As deduced from Hall measurements, the conductivity and carrier concentration in ZnO films increase with increasing the fluences, however, at highest ion fluence, these values decrease. These findings underscore the subtle impact of ion beam processes on semiconductor thin films, crucial for optimizing their performance in electronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143481129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural, optical and morphological properties of Mn:Cu co-doped ZnS films
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-02-23 DOI: 10.1007/s10854-025-14420-y
Madhulika Bhardwaj, Dhirendra Gupta, Jyoti Shrivastava, R. K. Pandey

Stoichiometric films of zinc sulfide (ZnS) were grown on quartz substrate using a wet chemical technique, both without and in the presence of copper (Cu) and manganese (Mn) dopants. The structural, morphological and luminescence properties of the as-deposited films were investigated using X-ray diffraction, atomic force microscopy, optical and luminescence spectroscopy. The sample compositions were analyzed using atomic absorption spectroscopy. It was found that changes in stoichiometry had a negligible effect on the crystalline phase and optical properties of the films, whereas variations in dopant concentration significantly altered their surface morphology and luminescence properties. The absorption edge of ZnS, determined using absorption spectroscopy was found to be blue-shifted from its bulk counterpart due to the confinement effect. The photoluminescence (PL) properties of the undoped and Mn:Cu co-doped ZnS samples have been studied in detail. The PL spectra of undoped samples consisted of a broad asymmetric peak which, upon deconvolution, was correlated with band edge transition and radiative recombination via intrinsic defect states. In contrast, doped samples showed intense Gaussian peaks positioned differently from the undoped samples, indicating the substitution of dopants at the zinc site in the ZnS lattice. The peak intensity also varied with changes in doping percentages in the samples. In this study, a high luminescence yield was achieved even at very low dopant concentrations.

{"title":"Structural, optical and morphological properties of Mn:Cu co-doped ZnS films","authors":"Madhulika Bhardwaj,&nbsp;Dhirendra Gupta,&nbsp;Jyoti Shrivastava,&nbsp;R. K. Pandey","doi":"10.1007/s10854-025-14420-y","DOIUrl":"10.1007/s10854-025-14420-y","url":null,"abstract":"<div><p>Stoichiometric films of zinc sulfide (ZnS) were grown on quartz substrate using a wet chemical technique, both without and in the presence of copper (Cu) and manganese (Mn) dopants. The structural, morphological and luminescence properties of the as-deposited films were investigated using X-ray diffraction, atomic force microscopy, optical and luminescence spectroscopy. The sample compositions were analyzed using atomic absorption spectroscopy. It was found that changes in stoichiometry had a negligible effect on the crystalline phase and optical properties of the films, whereas variations in dopant concentration significantly altered their surface morphology and luminescence properties. The absorption edge of ZnS, determined using absorption spectroscopy was found to be blue-shifted from its bulk counterpart due to the confinement effect. The photoluminescence (PL) properties of the undoped and Mn:Cu co-doped ZnS samples have been studied in detail. The PL spectra of undoped samples consisted of a broad asymmetric peak which, upon deconvolution, was correlated with band edge transition and radiative recombination via intrinsic defect states. In contrast, doped samples showed intense Gaussian peaks positioned differently from the undoped samples, indicating the substitution of dopants at the zinc site in the ZnS lattice. The peak intensity also varied with changes in doping percentages in the samples. In this study, a high luminescence yield was achieved even at very low dopant concentrations.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143475113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimisation of polypyrrole-modified conductive nonwoven fabrics: study of electrical and sensing properties
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-02-23 DOI: 10.1007/s10854-025-14371-4
Yafang Li, Beining Ma, Rui Yang, Yixia Zhao

This study aims to develop a nonwoven material with excellent conductive properties. We first used four nonwoven materials, namely viscose, polypropylene (PP), nylon, and polyester (PET), as substrates to prepare conductive nonwovens by polymerizing pyrrole monomer and ferric chloride as raw materials. After preliminary experiments, we chose the viscose-based material with the best performance for in-depth study. We optimized the conductive properties by controlling the reaction conditions and explored these conditions. Subsequently, the properties of these samples were thoroughly evaluated using infrared spectral analysis, thermogravimetric analysis, scanning electron microscopy observation, and electrical resistance testing. We found that the prepared conductive viscose nonwovens exhibited optimal electrical conductivity when the pyrrole concentration was 0.6 mol/L, the reaction temperature was 10 °C, and the reaction time was 0.5 h. The results showed that the nonwovens exhibited optimal electrical conductivity. This study not only provides a set of feasible technical solutions for the development of high-performance conductive nonwovens but also lays a solid foundation for the application of such materials in the field of smart wearable devices. Through further research and development, these materials are expected to be widely used in health monitoring and human–computer interaction, thus improving people’s quality of life.

{"title":"Optimisation of polypyrrole-modified conductive nonwoven fabrics: study of electrical and sensing properties","authors":"Yafang Li,&nbsp;Beining Ma,&nbsp;Rui Yang,&nbsp;Yixia Zhao","doi":"10.1007/s10854-025-14371-4","DOIUrl":"10.1007/s10854-025-14371-4","url":null,"abstract":"<div><p>This study aims to develop a nonwoven material with excellent conductive properties. We first used four nonwoven materials, namely viscose, polypropylene (PP), nylon, and polyester (PET), as substrates to prepare conductive nonwovens by polymerizing pyrrole monomer and ferric chloride as raw materials. After preliminary experiments, we chose the viscose-based material with the best performance for in-depth study. We optimized the conductive properties by controlling the reaction conditions and explored these conditions. Subsequently, the properties of these samples were thoroughly evaluated using infrared spectral analysis, thermogravimetric analysis, scanning electron microscopy observation, and electrical resistance testing. We found that the prepared conductive viscose nonwovens exhibited optimal electrical conductivity when the pyrrole concentration was 0.6 mol/L, the reaction temperature was 10 °C, and the reaction time was 0.5 h. The results showed that the nonwovens exhibited optimal electrical conductivity. This study not only provides a set of feasible technical solutions for the development of high-performance conductive nonwovens but also lays a solid foundation for the application of such materials in the field of smart wearable devices. Through further research and development, these materials are expected to be widely used in health monitoring and human–computer interaction, thus improving people’s quality of life.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143475134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Elastic behaviour and gas sensing properties of substituted Ni–Zn nano crystalline ferrites
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-02-23 DOI: 10.1007/s10854-025-14329-6
V. Lakshmi Savithri Vatsalya, G. Sunita Sundari, K. Siva Maha Laxmi, Sankeshi Supraja, Ch.S. Lakshmi

Infrared spectroscopy is used to examine the concentration-dependent elastic nature of Nickel & Zinc ferrite nanoparticles when iron is replaced by Cu/Co in small quantities. Stiffness constants (C11, C12), longitudinal (Vl), shear (Vt) velocities are assessed and verified. The values of Poisson’s ratio (σ), elastic moduli values (viz i.e., Rigidity Modulus (G), Bulk Modulus (K), and Young’s Modulus (E)) are calculated with changing concentration. Debye temperature realising from Anderson and Waldron formulae exhibits reverse trend for both the doped cations. The gas sensing response of undoped NZF, NZCu0.03F and NZCo0.04 F samples for the Acetone gas reveals much higher response than for Hydrogen and ethanol gas atmospheres. Tested samples exhibit superior performance for acetone with fast response and recovery time. Pure sample (NZF) and NZCu0.03F displays n-type behavior, whereas, NZCo0.04F verified n-type for below 250 °C and p-type behavior above 250 °C in Acetone atmosphere. The outcome of our results verified the dopant reliant elastic features and sensing suitability of the tested ferrite materials.

红外光谱法用于研究当少量铁被铜/钴取代时,镍& 锌铁氧体纳米粒子的弹性随浓度变化的特性。评估并验证了刚度常数(C11、C12)、纵向速度(Vl)和剪切速度(Vt)。泊松比 (σ)、弹性模量值(即刚性模量 (G)、体积模量 (K) 和杨氏模量 (E))随浓度变化而计算。根据 Anderson 和 Waldron 公式计算出的 Debye 温度对两种掺杂阳离子都呈现出相反的趋势。未掺杂的 NZF、NZCu0.03F 和 NZCo0.04 F 样品对丙酮气体的气体传感响应远高于对氢气和乙醇气体的响应。测试样品对丙酮的性能优越,响应和恢复时间快。纯样品(NZF)和 NZCu0.03F 显示出 n 型行为,而 NZCo0.04F 在丙酮气氛中低于 250 °C 时为 n 型,高于 250 °C 时为 p 型。我们的结果验证了测试铁氧体材料依赖掺杂剂的弹性特征和传感适用性。
{"title":"Elastic behaviour and gas sensing properties of substituted Ni–Zn nano crystalline ferrites","authors":"V. Lakshmi Savithri Vatsalya,&nbsp;G. Sunita Sundari,&nbsp;K. Siva Maha Laxmi,&nbsp;Sankeshi Supraja,&nbsp;Ch.S. Lakshmi","doi":"10.1007/s10854-025-14329-6","DOIUrl":"10.1007/s10854-025-14329-6","url":null,"abstract":"<div><p>Infrared spectroscopy is used to examine the concentration-dependent elastic nature of Nickel &amp; Zinc ferrite nanoparticles when iron is replaced by Cu/Co in small quantities. Stiffness constants (C11, C12), longitudinal (V<sub><i>l</i></sub>), shear (V<sub><i>t</i></sub>) velocities are assessed and verified. The values of Poisson’s ratio (σ), elastic moduli values (viz i.e., Rigidity Modulus (G), Bulk Modulus (K), and Young’s Modulus (<i>E</i>)) are calculated with changing concentration. Debye temperature realising from Anderson and Waldron formulae exhibits reverse trend for both the doped cations. The gas sensing response of undoped NZF, NZCu<sub>0.03</sub>F and NZCo<sub>0.04</sub> F samples for the Acetone gas reveals much higher response than for Hydrogen and ethanol gas atmospheres. Tested samples exhibit superior performance for acetone with fast response and recovery time. Pure sample (NZF) and NZCu<sub>0.03</sub>F displays n-type behavior, whereas, NZCo<sub>0.04</sub>F verified n-type for below 250 °C and p-type behavior above 250 °C in Acetone atmosphere. The outcome of our results verified the dopant reliant elastic features and sensing suitability of the tested ferrite materials.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143475197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Crystal growth and characterization of magnesium sulfate-doped adipic acid crystals: intense NLO response from centrosymmetric crystal
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-02-22 DOI: 10.1007/s10854-025-14455-1
S. Anbu Chudar Azhagan, V. Marianandhakumar

Optically good transparent quality of magnesium sulfate-doped adipic acid crystals was successfully grown by slow solvent evaporation route in methanol solvent at ambient temperature. The harvested crystal was crystallized in monoclinic crystal system with centrosymmetric space group P21/n. The measured size of the harvested crystal after a growth span of 14 days is 8 × 8 × 6 mm3. The determined second harmonic generation SHG efficiency of magnesium sulfate-doped adipic acid crystal is 2.63 times superior to that of pure adipic acid crystal. The high-resolution X-ray diffraction HRXRD experiment reveals that crystalline perfection of the grown crystal is optically good quality and consists of single diffraction peak. The obtained full width half maximum value (FWHM) of HRXRD diffraction curve is 40.07 arc second. The UV optical transmittance spectrum showed the band gap energy of 5.44 eV. FTIR and EDAX spectrum studies confirm the inclusion of dopant magnesium element into pure adipic acid host crystal matrix. The surface morphology of the grown crystal is platelet-like shape and confirms that the crystals have good crystalline nature. The grown crystal is thermally stable up to 107.3 °C. It is observed that magnesium sulfate-doped adipic acid crystal is softer than pure adipic acid sample.

{"title":"Crystal growth and characterization of magnesium sulfate-doped adipic acid crystals: intense NLO response from centrosymmetric crystal","authors":"S. Anbu Chudar Azhagan,&nbsp;V. Marianandhakumar","doi":"10.1007/s10854-025-14455-1","DOIUrl":"10.1007/s10854-025-14455-1","url":null,"abstract":"<div><p>Optically good transparent quality of magnesium sulfate-doped adipic acid crystals was successfully grown by slow solvent evaporation route in methanol solvent at ambient temperature. The harvested crystal was crystallized in monoclinic crystal system with centrosymmetric space group P2<sub>1</sub>/n. The measured size of the harvested crystal after a growth span of 14 days is 8 × 8 × 6 mm<sup>3</sup>. The determined second harmonic generation SHG efficiency of magnesium sulfate-doped adipic acid crystal is 2.63 times superior to that of pure adipic acid crystal. The high-resolution X-ray diffraction HRXRD experiment reveals that crystalline perfection of the grown crystal is optically good quality and consists of single diffraction peak. The obtained full width half maximum value (FWHM) of HRXRD diffraction curve is 40.07 arc second. The UV optical transmittance spectrum showed the band gap energy of 5.44 eV. FTIR and EDAX spectrum studies confirm the inclusion of dopant magnesium element into pure adipic acid host crystal matrix. The surface morphology of the grown crystal is platelet-like shape and confirms that the crystals have good crystalline nature. The grown crystal is thermally stable up to 107.3 °C. It is observed that magnesium sulfate-doped adipic acid crystal is softer than pure adipic acid sample.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143471850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Journal of Materials Science: Materials in Electronics
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1