Pub Date : 2026-01-09DOI: 10.1007/s10854-025-16514-z
Jyoti R, Prerna Attri, Nihal, B. C. Choudhary, Ramesh K. Sharma
In this study, a combined theoretical and experimental investigation was carried out to assess the NH3 sensing performance of graphene oxide (GO), reduced graphene oxide (rGO), and their manganese-doped rGO (Mn–rGO). Theoretical results indicated that GO exhibited limited sensitivity toward NH3 adsorption, while rGO showed improved adsorption behavior. Based on these findings, rGO was chosen as the substrate for experimental sensing studies. Further theoretical analysis revealed that Mn-rGO exhibited the most favorable structural and electronic properties for NH3 interaction among the materials evaluated. Experimentally, GO was synthesized using the Hummer’s method, and Mn-rGO was fabricated via a hydrothermal route. The successful formation and composition of the materials were confirmed through a range of characterization techniques, including XRD, FTIR, FESEM, EDS, HRTEM, and UV–Vis spectroscopy. Gas sensing performance was evaluated using I–V measurements, which showed good agreement with theoretical predictions. The sensitivity of rGO and Mn–rGO to NH3 gas was found to be 60% and 2480%, respectively. The remarkably high sensitivity of Mn-rGO highlights its strong potential as a promising material for NH3 gas sensing applications.
{"title":"Integrated theoretical and experimental investigation of Mn-doped reduced graphene oxide for high-performance ammonia gas sensing","authors":"Jyoti R, Prerna Attri, Nihal, B. C. Choudhary, Ramesh K. Sharma","doi":"10.1007/s10854-025-16514-z","DOIUrl":"10.1007/s10854-025-16514-z","url":null,"abstract":"<div><p>In this study, a combined theoretical and experimental investigation was carried out to assess the NH<sub>3</sub> sensing performance of graphene oxide (GO), reduced graphene oxide (rGO), and their manganese-doped rGO (Mn–rGO). Theoretical results indicated that GO exhibited limited sensitivity toward NH<sub>3</sub> adsorption, while rGO showed improved adsorption behavior. Based on these findings, rGO was chosen as the substrate for experimental sensing studies. Further theoretical analysis revealed that Mn-rGO exhibited the most favorable structural and electronic properties for NH<sub>3</sub> interaction among the materials evaluated. Experimentally, GO was synthesized using the Hummer’s method, and Mn-rGO was fabricated via a hydrothermal route. The successful formation and composition of the materials were confirmed through a range of characterization techniques, including XRD, FTIR, FESEM, EDS, HRTEM, and UV–Vis spectroscopy. Gas sensing performance was evaluated using I–V measurements, which showed good agreement with theoretical predictions. The sensitivity of rGO and Mn–rGO to NH<sub>3</sub> gas was found to be 60% and 2480%, respectively. The remarkably high sensitivity of Mn-rGO highlights its strong potential as a promising material for NH<sub>3</sub> gas sensing applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 2","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145930321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-09DOI: 10.1007/s10854-025-16558-1
Sang Ji Kim, Sang Yeol Lee
Precise control of oxygen vacancies is critical for optimizing the electrical performance and stability of amorphous oxide thin-film transistors (AOS TFTs). Amorphous Ga–Zn–Sn–O (a-GZTO) is a promising material in this regard, with Ga incorporation expected to modulate oxygen vacancy concentration and improve device reliability. This study systematically investigates the impact of Ga content on the electrical properties and thermal stability of a-GZTO TFTs. The characteristics of a-GZTO thin-film transistors (TFTs) were investigated by varying the gallium (Ga) concentration to 0 wt%, 1 wt%, and 2 wt%, enabling a systematic comparison of their electrical performance. A-GZTO TFTs were fabricated using radio frequency (RF) magnetron sputtering at room temperature. As the Ga ratio increased, the device’s threshold voltage (Vth) shifted upward from 4.84 to 9.38 V, while the mobility decreased from 22.9 to 17.7 cm2/V·s. Additionally, UV–visible spectroscopy revealed that higher Ga content enhanced transmittance in the ultraviolet region, indicating improved optical properties. To further examine these electrical characteristics, X-ray photoelectron spectroscopy (XPS) was employed, which confirmed that increased Ga content resulted in a reduction of oxygen vacancies. Transmission line measurement (TLM) analysis also validated a decrease in carrier concentration with higher Ga ratios, supporting the observed decline in mobility. Device stability was further assessed under temperature stress (TS), and based on the TS results, activation energy (Ea) and density of states (DOS) were extracted. These findings suggest that increasing Ga doping enhances thermal stability and optical transparency by reducing oxygen vacancies, although it adversely affects certain electrical properties due to decreased carrier concentration.
{"title":"Effect of gallium ratio on the electrical characteristics and stability of GZTO thin-film transistors: a trap state analysis","authors":"Sang Ji Kim, Sang Yeol Lee","doi":"10.1007/s10854-025-16558-1","DOIUrl":"10.1007/s10854-025-16558-1","url":null,"abstract":"<div><p>Precise control of oxygen vacancies is critical for optimizing the electrical performance and stability of amorphous oxide thin-film transistors (AOS TFTs). Amorphous Ga–Zn–Sn–O (a-GZTO) is a promising material in this regard, with Ga incorporation expected to modulate oxygen vacancy concentration and improve device reliability. This study systematically investigates the impact of Ga content on the electrical properties and thermal stability of a-GZTO TFTs. The characteristics of a-GZTO thin-film transistors (TFTs) were investigated by varying the gallium (Ga) concentration to 0 wt%, 1 wt%, and 2 wt%, enabling a systematic comparison of their electrical performance. A-GZTO TFTs were fabricated using radio frequency (RF) magnetron sputtering at room temperature. As the Ga ratio increased, the device’s threshold voltage (V<sub>th</sub>) shifted upward from 4.84 to 9.38 V, while the mobility decreased from 22.9 to 17.7 cm<sup>2</sup>/V·s. Additionally, UV–visible spectroscopy revealed that higher Ga content enhanced transmittance in the ultraviolet region, indicating improved optical properties. To further examine these electrical characteristics, X-ray photoelectron spectroscopy (XPS) was employed, which confirmed that increased Ga content resulted in a reduction of oxygen vacancies. Transmission line measurement (TLM) analysis also validated a decrease in carrier concentration with higher Ga ratios, supporting the observed decline in mobility. Device stability was further assessed under temperature stress (TS), and based on the TS results, activation energy (<i>E</i><sub><i>a</i></sub>) and density of states (DOS) were extracted. These findings suggest that increasing Ga doping enhances thermal stability and optical transparency by reducing oxygen vacancies, although it adversely affects certain electrical properties due to decreased carrier concentration.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 2","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145930565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-09DOI: 10.1007/s10854-025-16556-3
K. Vaijayanthi, G. Dhivakar, M. Dharmendira Kumar
Water contamination by antibiotics, heavy metals, and synthetic dyes poses a serious threat to both human and environmental health. In this work, we introduce a sustainable cerium-based Prussian blue analogue/biocarbon hybrid (Ce-PBA/NPC) photocatalyst, synthesized using jackfruit-peel-derived N, P-doped carbon, for broad-spectrum degradation of ciprofloxacin (CIP), hexavalent chromium (Cr (VI)), and crystal violet (CV) under visible-light irradiation. The hybrid design strategically couples the redox-active Ce3+/Ce4+ centres in Ce-PBA with the high conductivity, hierarchical porosity, and defect-rich active sites of N, P-doped biocarbon. Textural and optical evaluations revealed a markedly increased surface area (186.7 m2g−1), enlarged pore volume (0.42 cm3 g−1), and a narrowed band gap (1.95 eV) for the composite compared with pristine Ce-PBA. These findings indicate that the composite possesses more efficient light harvesting and improved charge separation. As a result, the Ce-PBA/NPC photocatalyst achieved degradation efficiencies of 92% for CIP, 88% for Cr (VI), and 95% for CV within 120 min, with apparent rate constants 3–4 times higher than those of the individual components. The composite also maintained high activity in binary and ternary pollutant systems, demonstrating strong resistance to competitive inhibition. These findings highlight the Ce-PBA/NPC hybrid as a durable, eco-friendly, and high-performance photocatalyst for visible-light-driven remediation of multi-target contaminants in wastewater.
由抗生素、重金属和合成染料引起的水污染对人类和环境健康构成严重威胁。在这项工作中,我们介绍了一种可持续的铈基普鲁士蓝类似物/生物碳杂化物(Ce-PBA/NPC)光催化剂,该催化剂由菠桔皮衍生的N, p掺杂碳合成,用于在可见光照射下广谱降解环丙沙星(CIP),六价铬(Cr (VI))和结晶紫(CV)。混合设计将Ce-PBA中具有氧化还原活性的Ce3+/Ce4+中心与N, p掺杂生物碳的高导电性、分层孔隙度和富含缺陷的活性位点巧妙地耦合在一起。结构和光学评价表明,与原始Ce-PBA相比,复合材料的表面积显著增加(186.7 m2 - g - 1),孔隙体积增大(0.42 cm3 - g - 1),带隙缩小(1.95 eV)。这些发现表明,该复合材料具有更有效的光捕获和改进的电荷分离。结果表明,Ce-PBA/NPC光催化剂在120 min内对CIP、Cr (VI)和CV的降解效率分别达到92%、88%和95%,其表观速率常数比单个组分高3-4倍。该复合材料在二元和三元污染物体系中也保持了较高的活性,表现出较强的抗竞争抑制能力。这些发现突出了Ce-PBA/NPC混合材料作为一种耐用、环保、高性能的光催化剂,可用于废水中多目标污染物的可见光修复。
{"title":"Boosting the photocatalytic activity of Ce-PBA via hybridization with bio-derived N, P-doped carbon for efficient degradation of multi-target pollutants","authors":"K. Vaijayanthi, G. Dhivakar, M. Dharmendira Kumar","doi":"10.1007/s10854-025-16556-3","DOIUrl":"10.1007/s10854-025-16556-3","url":null,"abstract":"<div><p>Water contamination by antibiotics, heavy metals, and synthetic dyes poses a serious threat to both human and environmental health. In this work, we introduce a sustainable cerium-based Prussian blue analogue/biocarbon hybrid (Ce-PBA/NPC) photocatalyst, synthesized using jackfruit-peel-derived N, P-doped carbon, for broad-spectrum degradation of ciprofloxacin (CIP), hexavalent chromium (Cr (VI)), and crystal violet (CV) under visible-light irradiation. The hybrid design strategically couples the redox-active Ce<sup>3+</sup>/Ce<sup>4+</sup> centres in Ce-PBA with the high conductivity, hierarchical porosity, and defect-rich active sites of N, P-doped biocarbon. Textural and optical evaluations revealed a markedly increased surface area (186.7 m<sup>2</sup>g<sup>−1</sup>), enlarged pore volume (0.42 cm<sup>3</sup> g<sup>−1</sup>), and a narrowed band gap (1.95 eV) for the composite compared with pristine Ce-PBA. These findings indicate that the composite possesses more efficient light harvesting and improved charge separation. As a result, the Ce-PBA/NPC photocatalyst achieved degradation efficiencies of 92% for CIP, 88% for Cr (VI), and 95% for CV within 120 min, with apparent rate constants 3–4 times higher than those of the individual components. The composite also maintained high activity in binary and ternary pollutant systems, demonstrating strong resistance to competitive inhibition. These findings highlight the Ce-PBA/NPC hybrid as a durable, eco-friendly, and high-performance photocatalyst for visible-light-driven remediation of multi-target contaminants in wastewater.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 2","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145930393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-09DOI: 10.1007/s10854-025-16491-3
P. Gayathri, V. Balasubramani, D. Siva Priya, S. Alfaify, Mohd Shkir
In this study, high-performance MIS Schottky photodiodes were using a novel Sr-modified ZrO2 interfacial layer synthesized via the Jet Nebulizer Spray Pyrolysis (JNSP) technique. Sr incorporation (3, 6, 9wt%) systematically tailored the structural and optical characteristics of ZrO2, enabling a transition to highly uniform cubic-phase films with refined crystallite size (17 to 10 nm), enhanced UV absorption, and bandgap narrowing to 3.90 eV. FESEM, EDAX and XPS analyses confirmed the formation of smooth, defect-minimized surfaces with stable Zr4⁺ O2⁻ Sr3⁺ bonding environments. The optimized Cu/ZrO2@Sr/n-Si diode (9 wt% Sr) exhibited markedly improved transport behavior, achieving an ideality factor of 3.63, barrier height of 0.76 eV, and significantly enhanced photosensitivity, responsivity, and quantum efficiency, alongside a detectivity of 4.94 × 107 Jones. This work demonstrates, for the first time, that Sr-engineered ZrO2 acts as a highly effective high-k interlayer, enabling substantial performance enhancement over undoped and RE-doped counterparts, establishing a new pathway for next-generation UV photodetectors and MIS-based optoelectronic devices.
{"title":"Upgrading of photo-detectivity in MIS Schottky barrier diodes through Sr interfacial layer incorporation for photovoltaic applications","authors":"P. Gayathri, V. Balasubramani, D. Siva Priya, S. Alfaify, Mohd Shkir","doi":"10.1007/s10854-025-16491-3","DOIUrl":"10.1007/s10854-025-16491-3","url":null,"abstract":"<div><p>In this study, high-performance MIS Schottky photodiodes were using a novel Sr-modified ZrO<sub>2</sub> interfacial layer synthesized via the Jet Nebulizer Spray Pyrolysis (JNSP) technique. Sr incorporation (3, 6, 9wt%) systematically tailored the structural and optical characteristics of ZrO<sub>2</sub>, enabling a transition to highly uniform cubic-phase films with refined crystallite size (17 to 10 nm), enhanced UV absorption, and bandgap narrowing to 3.90 eV. FESEM, EDAX and XPS analyses confirmed the formation of smooth, defect-minimized surfaces with stable Zr<sup>4</sup>⁺ O<sup>2</sup>⁻ Sr<sup>3</sup>⁺ bonding environments. The optimized Cu/ZrO<sub>2</sub>@Sr/n-Si diode (9 wt% Sr) exhibited markedly improved transport behavior, achieving an ideality factor of 3.63, barrier height of 0.76 eV, and significantly enhanced photosensitivity, responsivity, and quantum efficiency, alongside a detectivity of 4.94 × 10<sup>7</sup> Jones. This work demonstrates, for the first time, that Sr-engineered ZrO<sub>2</sub> acts as a highly effective high-k interlayer, enabling substantial performance enhancement over undoped and RE-doped counterparts, establishing a new pathway for next-generation UV photodetectors and MIS-based optoelectronic devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 2","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145930508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-09DOI: 10.1007/s10854-025-16475-3
S. Saranya, Raji Arumugam, N. Priyadharsini, M. Rajkumar
The increasing discharge of persistent and toxic organic dyes into industrial wastewater necessitates the development of efficient, economical, and environmentally sustainable treatment strategies. In this study, a high-performance photocatalyst was synthesized as a ternary TiO2–ZnO/Graphene Oxide (NC ZnO) nanocomposite. The novelty of this work lies in the strategic combination of TiO2 and ZnO nanoparticles onto high-surface-area graphene oxide (GO) sheets, forming a Type-II heterojunction that effectively suppresses the rapid recombination of photoinduced electron–hole pairs and enhances charge separation efficiency. The NC ZnO was synthesized via the sol–gel method because it is superior at achieving molecular-level homogeneity and controlling the morphology of the metal oxides at low processing temperatures, which is critical for preserving the integrity of the GO nanosheets. Furthermore, Moringa oleifera seed extract was utilized as a natural reducing and stabilizing agent, introducing a green and sustainable synthesis route. Comprehensive characterization of NC ZnO confirmed the successful formation of the ternary heterostructure. Hexagonal wurtzite structure, crystallinity, and functional groups of the samples were characterized via X-ray Diffraction (XRD) and Fourier Transform Infrared Spectroscopy (FTIR). The photocatalytic activity of the optimized NC ZnO was evaluated for the degradation of Methylene Blue (MB) and Carbol Fuchsin (CF) dyes under visible light irradiation, achieving degradation efficiencies of 75% and 72%, respectively, within 90 min. The developed NC ZnO nanocomposite thus represents a promising, cost-effective, and eco-friendly photocatalyst for the efficient remediation of dye-polluted industrial effluents.
{"title":"Investigation on photodegradation of methylene blue and carbol fuchsin using green synthesized zinc/titanium/graphene oxide nanocomposites","authors":"S. Saranya, Raji Arumugam, N. Priyadharsini, M. Rajkumar","doi":"10.1007/s10854-025-16475-3","DOIUrl":"10.1007/s10854-025-16475-3","url":null,"abstract":"<div><p>The increasing discharge of persistent and toxic organic dyes into industrial wastewater necessitates the development of efficient, economical, and environmentally sustainable treatment strategies. In this study, a high-performance photocatalyst was synthesized as a ternary TiO<sub>2</sub>–ZnO/Graphene Oxide (NC ZnO) nanocomposite. The novelty of this work lies in the strategic combination of TiO<sub>2</sub> and ZnO nanoparticles onto high-surface-area graphene oxide (GO) sheets, forming a Type-II heterojunction that effectively suppresses the rapid recombination of photoinduced electron–hole pairs and enhances charge separation efficiency. The NC ZnO was synthesized via the sol–gel method because it is superior at achieving molecular-level homogeneity and controlling the morphology of the metal oxides at low processing temperatures, which is critical for preserving the integrity of the GO nanosheets. Furthermore, Moringa oleifera seed extract was utilized as a natural reducing and stabilizing agent, introducing a green and sustainable synthesis route. Comprehensive characterization of NC ZnO confirmed the successful formation of the ternary heterostructure. Hexagonal wurtzite structure, crystallinity, and functional groups of the samples were characterized via X-ray Diffraction (XRD) and Fourier Transform Infrared Spectroscopy (FTIR). The photocatalytic activity of the optimized NC ZnO was evaluated for the degradation of Methylene Blue (MB) and Carbol Fuchsin (CF) dyes under visible light irradiation, achieving degradation efficiencies of 75% and 72%, respectively, within 90 min. The developed NC ZnO nanocomposite thus represents a promising, cost-effective, and eco-friendly photocatalyst for the efficient remediation of dye-polluted industrial effluents.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 2","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145930283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-08DOI: 10.1007/s10854-025-16554-5
Zaib Ullah Khan, Jinghua Jiang, Shah Zeb
Developing electrode materials that simultaneously provide high redox activity, rapid charge transport, and long-term stability is crucial for advancing next-generation supercapacitors. In this study, a series of metal–organic frameworks (MOFs), including Ni-MOF, Fe-MOF, bimetallic Ni/Fe-MOF, and Zn-doped Ni/Fe-MOF, were rationally synthesized and comprehensively evaluated to establish clear correlations between their structural features and electrochemical behavior. Among these, the Zn-doped Ni/Fe-MOF exhibited the most outstanding electrochemical behavior, attributed to the synergistic effects of dual-metal coordination and Zn incorporation, which collectively enhanced electrical conductivity and increased the accessible electroactive surface area. When applied as the positive electrode in an aqueous asymmetric supercapacitor (ASC) using activated carbon (AC) as the negative electrode and 2M KOH electrolyte, the Zn-doped Ni/Fe-MOF delivered a high specific capacitance of 102.31 F g⁻1 at 1 A g⁻1 and retained 71.03 F g⁻1 at 10 A g⁻1. The assembled ASC also achieved an energy density of 23.45 Wh kg⁻1 at a power density of 803.77 W kg⁻1, along with excellent cycling stability, maintaining 89.42% capacitance retention and ~ 99% coulombic efficiency over 5000 cycles. These findings highlight Zn-doped Ni/Fe-MOF as a promising electrode material for high-performance aqueous ASCs, offering a balanced combination of energy density, power capability, and operational durability.
开发同时提供高氧化还原活性、快速电荷传输和长期稳定性的电极材料对于推进下一代超级电容器至关重要。本研究合理合成了Ni- mof、Fe-MOF、双金属Ni/Fe-MOF、掺锌Ni/Fe-MOF等一系列金属有机骨架,并对其结构特征与电化学行为之间的关系进行了综合评价。其中,锌掺杂的Ni/Fe-MOF表现出最突出的电化学行为,这是由于双金属配位和锌掺入的协同作用,共同提高了电导率,增加了可达电活性表面积。当将Ni/Fe-MOF作为正极应用于以活性炭(AC)为负极和2M KOH电解质的水不对称超级电容器(ASC)时,锌掺杂的Ni/Fe-MOF提供了102.31 F - 1 (1 a g - 1)的高比容,并在10 a g - 1时保持71.03 F - 1 (10 a g - 1)的比容。组装好的ASC在803.77 W kg⁻1的功率密度下也达到了23.45 Wh kg⁻1的能量密度,同时具有良好的循环稳定性,在5000次循环中保持89.42%的电容保持率和~ 99%的库仑效率。这些发现强调了锌掺杂Ni/Fe-MOF作为高性能水性ASCs的一种有前途的电极材料,提供了能量密度、功率能力和操作耐久性的平衡组合。
{"title":"Nanostructured zinc-doped nickel/iron metal–organic framework electrode material for an efficient energy storage","authors":"Zaib Ullah Khan, Jinghua Jiang, Shah Zeb","doi":"10.1007/s10854-025-16554-5","DOIUrl":"10.1007/s10854-025-16554-5","url":null,"abstract":"<div><p>Developing electrode materials that simultaneously provide high redox activity, rapid charge transport, and long-term stability is crucial for advancing next-generation supercapacitors. In this study, a series of metal–organic frameworks (MOFs), including Ni-MOF, Fe-MOF, bimetallic Ni/Fe-MOF, and Zn-doped Ni/Fe-MOF, were rationally synthesized and comprehensively evaluated to establish clear correlations between their structural features and electrochemical behavior. Among these, the Zn-doped Ni/Fe-MOF exhibited the most outstanding electrochemical behavior, attributed to the synergistic effects of dual-metal coordination and Zn incorporation, which collectively enhanced electrical conductivity and increased the accessible electroactive surface area. When applied as the positive electrode in an aqueous asymmetric supercapacitor (ASC) using activated carbon (AC) as the negative electrode and 2M KOH electrolyte, the Zn-doped Ni/Fe-MOF delivered a high specific capacitance of 102.31 F g⁻<sup>1</sup> at 1 A g⁻<sup>1</sup> and retained 71.03 F g⁻<sup>1</sup> at 10 A g⁻<sup>1</sup>. The assembled ASC also achieved an energy density of 23.45 Wh kg⁻<sup>1</sup> at a power density of 803.77 W kg⁻<sup>1</sup>, along with excellent cycling stability, maintaining 89.42% capacitance retention and ~ 99% coulombic efficiency over 5000 cycles. These findings highlight Zn-doped Ni/Fe-MOF as a promising electrode material for high-performance aqueous ASCs, offering a balanced combination of energy density, power capability, and operational durability.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 2","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145930523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-08DOI: 10.1007/s10854-025-16384-5
Hoda Enayati-Taloobaghi , Sadegh Soltani, Mohammad Mahdi Shahidi, Esmaeil Salahi
This study investigates the photoconductive response of Au-doped TiO₂ thin films under ultraviolet (UV) illumination, with a focus on changes in electrical resistance as a detection mechanism. Thin films with varying gold nanoparticle distributions—on the surface and within the TiO₂ matrix—were fabricated using magnetron sputtering and thermal oxidation techniques. Under UV exposure, all Au-doped samples exhibited a significant, rapid, and reversible decrease in resistance, attributed to the generation of photoinduced charge carriers in TiO₂ and localized surface plasmon resonance (LSPR) effects from the incorporated Au nanoparticles. Among the samples, the configurations with Au located at the surface (Top-Au) and embedded within the film (Mid-Au) exhibited the most efficient photo response. Best response values, sensitivity are 6.8% and 6.5%, rise/fall times are 0.48/0.12 and 0.38/0.29 for Mid-Au and Top-Au, respectively. The results confirm that resistance modulation in these nanostructured films provides a reliable, low-power approach for real-time UV photodetection. This work highlights the potential of plasmon-enhanced oxide semiconductors in the development of next-generation optoelectronic sensors.
{"title":"Phase engineering and UV photoresponse of TiO₂ films on Si substrates modified with spatially distributed Au nanoparticles","authors":"Hoda Enayati-Taloobaghi , Sadegh Soltani, Mohammad Mahdi Shahidi, Esmaeil Salahi","doi":"10.1007/s10854-025-16384-5","DOIUrl":"10.1007/s10854-025-16384-5","url":null,"abstract":"<div><p>This study investigates the photoconductive response of Au-doped TiO₂ thin films under ultraviolet (UV) illumination, with a focus on changes in electrical resistance as a detection mechanism. Thin films with varying gold nanoparticle distributions—on the surface and within the TiO₂ matrix—were fabricated using magnetron sputtering and thermal oxidation techniques. Under UV exposure, all Au-doped samples exhibited a significant, rapid, and reversible decrease in resistance, attributed to the generation of photoinduced charge carriers in TiO₂ and localized surface plasmon resonance (LSPR) effects from the incorporated Au nanoparticles. Among the samples, the configurations with Au located at the surface (Top-Au) and embedded within the film (Mid-Au) exhibited the most efficient photo response. Best response values, sensitivity are 6.8% and 6.5%, rise/fall times are 0.48/0.12 and 0.38/0.29 for Mid-Au and Top-Au, respectively. The results confirm that resistance modulation in these nanostructured films provides a reliable, low-power approach for real-time UV photodetection. This work highlights the potential of plasmon-enhanced oxide semiconductors in the development of next-generation optoelectronic sensors.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 2","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145930258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this present work, nanoparticles of Zn-doped SnO2 nanostructures were synthesized using a low-cost solution combustion synthesis method. The structural analysis and morphological properties with elemental composition of synthesized samples were characterized via X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) with energy dispersive spectroscopy (EDS) respectively. XRD investigations confirm the tetragonal rutile structure with a reduction in average crystallite size from 8.63 nm to 7.06 nm with an increase of Zn2+concentration. FESEM with energy dispersive X-ray spectroscopy (EDS) confirms the formation of nanoparticles without any impurity. UV–Visible studies show a reduction in band gap energy values from 3.71 eV to 3.38 eV with an increment in concentration of Zn. Fourier transform infrared spectroscopy (FTIR) corresponds to O–H, C–H, Sn–OH, and Sn–O–Sn functional groups and confirms the creation of pure phase SnO2. Photoluminescence spectra (PL) of Zn-doped SnO2 nanostructures analyze the near band edge emission or UV emission at 454 nm and a green emission at 524 nm, confirming the excess of oxygen vacancies within the host structure. Raman spectra also confirm the abatement of crystallite size and existence of flaws like oxygen vacancies. These defects significantly influence the interaction of gas molecules with the surface of the sensing layer. The I–V (current–voltage) characteristics of the paper-based sensing device fabricated using Zn-doped SnO2 nanostructures were examined to investigate its response in the ammonia environment with regard to varying exposure time. An increase in electric current was observed at a specific applied voltage when the Zn-doped SnO2 nanostructured layer on Whatman paper was exposed to ammonia fumes, demonstrating its oxidizing nature. Only qualitative mode is used in these sensing studies.
{"title":"Low- cost solution combustion synthesis of highly sensitive ammonia sensing device based on Zn doped SnO2 nanostructures","authors":"Nishu Rani, Sunil Kumar, Sridhar Babu, Ravi Kant Choubey, Umesh Kumar Dwivedi, Vijay Kumar","doi":"10.1007/s10854-026-16592-7","DOIUrl":"10.1007/s10854-026-16592-7","url":null,"abstract":"<div><p>In this present work, nanoparticles of Zn-doped SnO<sub>2</sub> nanostructures were synthesized using a low-cost solution combustion synthesis method. The structural analysis and morphological properties with elemental composition of synthesized samples were characterized via X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) with energy dispersive spectroscopy (EDS) respectively. XRD investigations confirm the tetragonal rutile structure with a reduction in average crystallite size from 8.63 nm to 7.06 nm with an increase of Zn<sup>2+</sup>concentration. FESEM with energy dispersive X-ray spectroscopy (EDS) confirms the formation of nanoparticles without any impurity. UV–Visible studies show a reduction in band gap energy values from 3.71 eV to 3.38 eV with an increment in concentration of Zn. Fourier transform infrared spectroscopy (FTIR) corresponds to O–H, C–H, Sn–OH, and Sn–O–Sn functional groups and confirms the creation of pure phase SnO<sub>2</sub>. Photoluminescence spectra (PL) of Zn-doped SnO<sub>2</sub> nanostructures analyze the near band edge emission or UV emission at 454 nm and a green emission at 524 nm, confirming the excess of oxygen vacancies within the host structure. Raman spectra also confirm the abatement of crystallite size and existence of flaws like oxygen vacancies. These defects significantly influence the interaction of gas molecules with the surface of the sensing layer. The <i>I</i>–<i>V</i> (current–voltage) characteristics of the paper-based sensing device fabricated using Zn-doped SnO<sub>2</sub> nanostructures were examined to investigate its response in the ammonia environment with regard to varying exposure time. An increase in electric current was observed at a specific applied voltage when the Zn-doped SnO<sub>2</sub> nanostructured layer on Whatman paper was exposed to ammonia fumes, demonstrating its oxidizing nature. Only qualitative mode is used in these sensing studies.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 2","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-08DOI: 10.1007/s10854-025-16549-2
A. Elgharbi, M. Sadik, M. Lassri, A. El Hachmi, M. Oubla, H. Lassri, M. Abid, Y. Arba
The copper europium oxide (({text{Eu}}_{2}{text{CuO}}_{4})) cuprate was synthesized by the solid-state reaction method and investigated in terms of its structural as well as linear and nonlinear optical properties. X-ray diffraction, combined with Rietveld refinement, Rietveld refinement confirmed that the XRD pattern corresponds to the ({text{Eu}}_{2}{text{CuO}}_{4}) phase. The lattice parameters for ({text{Eu}}_{2}{text{CuO}}_{4}) were determined to be a = 3.902(2) Å and c = 11.905(6) Å, in accordance with reported data for T′-type cuprates, while revealing slight lattice distortions associated with oxygen stoichiometry. Raman spectroscopy further confirms the stabilization of T′-phase through the identification of the characteristic A1g and B1g vibrational modes. The direct optical bandgap was evaluated to be 1.55 ± 6.4 × 10–4 eV, consistent with the 1.45–1.70 eV range reported for ({text{Eu}}_{2}{text{CuO}}_{4}) and other T′-type cuprates, while showing enhanced absorption near the band edge. The refractive index (n), dielectric function (ε), as well as the real and imaginary parts of the optical conductivity (({upsigma }_{1}) and ({upsigma }_{2})) were determined. Furthermore, optical dispersion was analyzed using the Wemple–DiDomenico model to extract oscillator parameters and to evaluate the third-order nonlinear optical susceptibility (χ3). The χ3 value obtained, previously scarcely investigated, represents an original contribution of this work and highlights the good potential of Eu₂CuO₄ for advanced optoelectronic applications.
{"title":"Synthesis and investigation of structural and linear/non-linear optical properties of T’-({mathbf{Eu}}_{2} {mathbf{CuO}}_{4}) cuprate","authors":"A. Elgharbi, M. Sadik, M. Lassri, A. El Hachmi, M. Oubla, H. Lassri, M. Abid, Y. Arba","doi":"10.1007/s10854-025-16549-2","DOIUrl":"10.1007/s10854-025-16549-2","url":null,"abstract":"<div><p>The copper europium oxide <span>(({text{Eu}}_{2}{text{CuO}}_{4}))</span> cuprate was synthesized by the solid-state reaction method and investigated in terms of its structural as well as linear and nonlinear optical properties. X-ray diffraction, combined with Rietveld refinement, Rietveld refinement confirmed that the XRD pattern corresponds to the <span>({text{Eu}}_{2}{text{CuO}}_{4})</span> phase. The lattice parameters for <span>({text{Eu}}_{2}{text{CuO}}_{4})</span> were determined to be <i>a</i> = 3.902(2) Å and <i>c</i> = 11.905(6) Å, in accordance with reported data for T′-type cuprates, while revealing slight lattice distortions associated with oxygen stoichiometry. Raman spectroscopy further confirms the stabilization of T′-phase through the identification of the characteristic A<sub>1g</sub> and B<sub>1g</sub> vibrational modes. The direct optical bandgap was evaluated to be 1.55 ± 6.4 × 10<sup>–4</sup> eV, consistent with the 1.45–1.70 eV range reported for <span>({text{Eu}}_{2}{text{CuO}}_{4})</span> and other <i>T</i>′-type cuprates, while showing enhanced absorption near the band edge. The refractive index (n), dielectric function (ε), as well as the real and imaginary parts of the optical conductivity (<span>({upsigma }_{1})</span> and <span>({upsigma }_{2})</span>) were determined. Furthermore, optical dispersion was analyzed using the Wemple–DiDomenico model to extract oscillator parameters and to evaluate the third-order nonlinear optical susceptibility (χ<sup>3</sup>). The χ<sup>3</sup> value obtained, previously scarcely investigated, represents an original contribution of this work and highlights the good potential of Eu₂CuO₄ for advanced optoelectronic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 2","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-08DOI: 10.1007/s10854-026-16582-9
Ameer F. Shamkhi, Hashim Jabbar
In this research, cobalt ferrite (CoFe2O4) nanoparticles were synthesized via the thermal decomposition method, and their magnetic hyperthermia performance was evaluated under high strength alternating magnetic fields. The structural, morphological, and magnetic properties of the nanoparticles were characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and vibrating sample magnetometer (VSM). The specific absorption rate (SAR) values of CoFe2O4 nanoparticles (S1, S2, and S3) increased with increasing magnetic field strength. At a magnetic field of 400 Oe and a frequency of 300 kHz, the maximum specific absorption rate (SAR) values recorded were 334.48, 362.35, and 1003.44 W/g for samples S1, S2, and S3, respectively. Notably, sample S3 exhibited the highest specific absorption rate values at both (400 Oe, 300 kHz) and (300 Oe, 400 kHz) compared to the other samples.
{"title":"Preparation of functional CoFe2O4 nanoparticles via high temperature decomposition for magnetic hyperthermia application","authors":"Ameer F. Shamkhi, Hashim Jabbar","doi":"10.1007/s10854-026-16582-9","DOIUrl":"10.1007/s10854-026-16582-9","url":null,"abstract":"<div><p>In this research, cobalt ferrite (CoFe<sub>2</sub>O<sub>4</sub>) nanoparticles were synthesized via the thermal decomposition method, and their magnetic hyperthermia performance was evaluated under high strength alternating magnetic fields. The structural, morphological, and magnetic properties of the nanoparticles were characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and vibrating sample magnetometer (VSM). The specific absorption rate (SAR) values of CoFe<sub>2</sub>O<sub>4</sub> nanoparticles (S1, S2, and S3) increased with increasing magnetic field strength. At a magnetic field of 400 Oe and a frequency of 300 kHz, the maximum specific absorption rate (SAR) values recorded were 334.48, 362.35, and 1003.44 W/g for samples S1, S2, and S3, respectively. Notably, sample S3 exhibited the highest specific absorption rate values at both (400 Oe, 300 kHz) and (300 Oe, 400 kHz) compared to the other samples.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 2","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}