Journal of Materials Science: Materials in Electronics最新文献

Giant dielectric constant materials have become the cornerstone for miniaturization and high performance of electronic components, and have promoted revolutionary development in modern communications, computing, and medical fields. In this study, a dense (Sb_0.5Dy_0.5)_xTi_1−xO₂ ceramic material with a strong electron-pinning effect was prepared by a solid-state reaction method. In particular, when x = 0.01, the material exhibits an ultra-high dielectric constant of 1.619 × 10⁴ and an ultra-low loss of 0.0102 at 1 kHz and RT. The ceramic exhibited excellent frequency stability, temperature stability, and DC bias stability in the frequency range of 10² Hz to 10⁶ Hz from RT to 250 ℃. This experiment aims to analyze the mechanism of the material’s excellent dielectric properties by combining X-ray photoelectron spectroscopy (XPS), electron microscopy surface microanalysis, impedance spectroscopy, and relaxation behavior. Experiments show that the defect cluster structure with a strong electron-pinning effect and various polarization behaviors are the main reasons affecting the giant dielectric behavior of ceramics, and based on this research, giant dielectric ceramics with ultra-low loss and excellent temperature, frequency, and DC bias stability can be prepared.

As a III-V group semiconductor material, Ga_xIn_1−xSb(0 < x < 1) crystal is of great application potential in the infrared detection devices and the high electron mobility transistors etc. fields due to its unique advantages, such as the turnabilities of lattice constant, energy bandgap, and cutoff wavelength. Ga_0.86In_0.14Sb crystals (Φ25 × 100) were prepared with the traveling heater method (THM) applied a rotating magnetic field (RMF), and the influences of the RMF frequency on the structure and properties of GaInSb crystals were investigated. The results show that the crystallization quality of GaInSb crystal improves with the increase of RMF frequency, and the dislocation density decreases from 2.361 × 10⁵ cm⁻² to 7.274 × 10³ cm⁻². And both the radial and the axial segregations of the In component in the crystal decrease. In the range of 20–80 mm of the crystal ingot along the growth axis, the radial segregation of the In component decreases from 0.258 to 0.086 mol%/mm, and the axial segregation does from 0.114 to 0.04 mol%/mm. The electrical properties of the crystal are also improved. The carrier mobility increases from 1.296 × 10³ cm²/(V·s) to 1.709 × 10³ cm²/(V·s), while the resistivity decreases from 1.822 × 10^–3 Ω·cm to 1.377 × 10^–3 Ω·cm. In addition, the infrared transmittance of GaInSb crystal increases from 36 to 38%. And the direct bandgap of the crystal decreased from 0.641 eV to 0.630 eV.

In this work, a systematic investigation is conducted on the electrical characteristics and interface engineering of metal–oxide–semiconductor (MOS) capacitors employing a novel Sc₂O₃/SiO₂ gate dielectric stack. Emphasis is placed on elucidating the critical roles of post-deposition annealing processes and the interfacial SiO₂ layer in modulating the interfacial quality and overall device performance. Detailed capacitance–voltage (C–V) and conductance–voltage (G–V) analyses demonstrated a marked improvement in critical electrical parameters, most notably a significant reduction in effective oxide charge (N_eff ≈ 2.5 × 10¹⁰ cm⁻²) and interface trap density (D_it ≈ 5.3 × 10¹⁰ cm⁻²) following annealing at 600 °C, underscoring effective defect passivation. Barrier height and flat-band voltage values were also significantly improved, confirming well interface quality. At higher temperatures (800 °C), the emergence of silicate phases, as corroborated by FTIR and XRD analyses, led to a degradation in dielectric integrity and increased trap formation. Structural and surface analyses supported these findings, with increased crystallinity and moderate roughness contributing to electrical behavior. Notably, the incorporation of a thin SiO₂ interfacial layer played a pivotal role in suppressing interface states and stabilizing the oxide–semiconductor boundary. The results demonstrate that precise thermal engineering of Sc₂O₃ dielectrics enables substantial performance gains, positioning this structure as a strong candidate for future high-κ MOS technologies.

Heavy metals such as lead (Pb(II)) are highly toxic and persistent heavy metals that can accumulate in the environment and living organisms, even at trace levels, causing serious health issues such as neurological and kidney disorders. Therefore, its accurate and rapid detection is crucial for environmental monitoring, pollution control, and public health protection. Compared to conventional analytical techniques, electrochemical sensing offers a simple, cost-effective, and highly sensitive approach for real-time Pb(II) monitoring. In this work, a simple reflux strategy is used to combine reduced graphene oxide (RGO) with copper tungstate (CuWO₄) nanoparticles (NPs) to create a CuWO₄/RGO nanocomposite (NPS). The lead ion (Pb (II)) was detected electrochemically using the generated CuWO₄/RGO NPS. The well-defined CuWO₄/RGO NPS is applied as a modifier on glassy carbon electrodes (GCE) to create CuWO₄/RGO@GCE. Several characterization techniques, including Energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and powder X-ray diffraction (PXRD), were used to analyze the synthesized GO, RGO, CuWO₄, and CuWO₄/RGO NPS. Cyclic voltammetry (CV) and differential pulse anodic stripping voltammetry (DPASV) were used to assess the electrochemical detection of Pb (II). With a limit of detection (LOD) of 0.4 ppb and a linear range of 2–20 ppb, the CuWO₄/RGO@GCE electrode demonstrated exceptional sensitivity of 0.001A/V, selectivity, and repeatability. In the meantime, real sample analysis using the CuWO₄/RGO@GCE electrode has shown improved recovery findings of 96.8 – 99.8%.

Silicon carbide (SiC), as a third-generation semiconductor material, is recently used in high-voltage and high-power devices for new energy vehicles and other fields due to its superior electrical properties, high temperature resistance and high chemical inertness. Inductively coupled plasma (ICP) etching, as one of the dry etching technologies, demonstrates many useful advantages and has become an important fabrication process method in high volume manufacturing process of SiC power devices. This review starts with an introduction of the configuration of ICP set up and its working principle for etching. The influences of different mask materials in the etching process on selectivity and surface quality are reviewed. An analysis of undesirable etching morphology and surface damages induced by ICP etching is systematically reviewed. A comprehensive comparison of four key process parameters, namely type of working gas, ICP power, RF power and chamber pressure on the effect of etch rate and surface quality is reviewed.

In this work, we have reported a strategy about improvement of magnetic properties of FeSi SMC via regulating resin content and particle size distribution. The results show that distribution of resin in powders system has an impact on agglomeration of particles, which is determined by resin content and particle size. A good agglomeration state can effectively improve filling performance of powders, thereby enhancing density of cores. Consequently, the SMC with appropriate resin content has good soft magnetic properties. Meanwhile, the SMCs with different particle size distribution exhibit varying frequency-dependent behaviors. Moreover, in order to overcome poor thermal stability and magnetic dilution of single organic coating, Ni-Zn ferrite insulation layer was coated on the surface of FeSi powders by in-situ growth method. The SMCs with the varying amounts of Ni-Zn ferrite (0.5, 1.0, 2.0 wt.%) were researched. Due to its continuous magnetic ferrite phase around particles, the SMC with 0.5 wt.% Ni-Zn ferrite has the best comprehensive magnetic properties, exhibiting a high μ_e of 92 and simultaneous a low P_cv of 125.6 mW/cm³ (50 mT and 50 kHz). And it showcases better soft magnetic properties than most of FeSi SMCs reported so far.

Sn-58Bi solder alloy, with its advantages of low cost and low melting point, has become an important subject of research in lead-free solders. However, its poor corrosion resistance remains a significant challenge in current development. Ni has been proven to enhance the corrosion resistance of tin-based lead-free solders. This study investigates the corrosion resistance of Sn-58Bi-XNi (X = 0, 0.1, 0.2, 0.3, 0.4 wt.%) solder alloys in a 3.5 wt.% NaCl solution. The effect of Ni content on the corrosion performance of Sn-58Bi alloys was assessed using potentiodynamic polarization curves and electrochemical impedance spectroscopy (EIS), and the corrosion mechanism of Sn-58Bi-XNi alloys was analyzed in conjunction with cross-sectional and surface morphology changes. The results show that when no Ni is added, the Sn-58Bi alloy exhibits the poorest corrosion resistance, with a corrosion current density of 1.414 × 10⁻⁴ A/cm² and an impedance value of 2877 Ω cm². When the Ni content is 0.1% and 0.2 wt.%, the Sn-rich phase on the alloy surface is significantly refined, and the corrosion resistance of Sn-58Bi alloy improves. This is because the addition of Ni promotes the formation of a denser and more uniform corrosion product on the solder surface. At this point, the alloy’s corrosion current densities are 5.079 × 10⁻⁵ A/cm² and 3.664 × 10⁻⁵ A/cm², with impedance values of 9904 Ω·cm² and 11,585 Ω·cm². When the Ni content increases to 0.3 and 0.4 wt.%, the improvement in corrosion resistance slightly decreases, with corrosion current densities of 8.680 × 10⁻⁵ A/cm² and 1.218 × 10⁻⁴ A/cm², and impedance values of 5918 Ω·cm² and 4764 Ω·cm². This is primarily due to electrogalvanic corrosion between the Ni₃Sn₄ intermetallic compound and the Sn-rich phase, which accelerates the dissolution of the Sn-rich phase. Therefore, Sn-58Bi-0.2Ni alloy exhibits the best corrosion resistance.

In this study, novel composite membranes based on polyethersulfone (PES) reinforced with nano-copper (N-Cu) particles were developed using the phase inversion method. The primary aim was to enhance water treatment performance, while simultaneously evaluating their potential as lightweight radiation shielding materials, thus providing a dual-functional platform. The prepared membranes were systematically characterized using FTIR, SEM, TEM, EDX, TGA, as well as adsorption tests and contact angle measurements. Results revealed successful and homogeneous dispersion of N-Cu within the PES matrix, leading to significant improvements in surface and hydrophilic properties. The contact angle decreased from 59.7° to 36.5°, confirming enhanced wettability, while the pure water flux (PWF) increased dramatically from 28 LMH for pristine PES to 135 LMH for PES/N-Cu FSM, indicating nearly a fivefold enhancement. Additionally, the PES/N-Cu FSM exhibited superior adsorption capacity toward pollutants (methylene blue), achieving ~ 25% higher removal efficiency compared to pristine PES. Radiation shielding performance was further assessed using Monte Carlo (MCNP) simulations validated by EpiXS software. The results confirmed that PES/N-Cu FSM displayed significantly higher linear attenuation coefficients than pristine PES, with effective shielding against γ-rays and fast neutrons up to 15 MeV. The incorporation of nano-copper increased the effective density and photon interaction probability, thereby improving radiation attenuation while maintaining lightweight characteristics. Overall, PES/N-Cu FSM demonstrates a unique dual functionality by combining efficient water purification with effective radiation shielding. This positions it as a promising candidate for applications in medical, industrial, and environmental fields where both clean water and radiation protection are simultaneously required.

A binary micro-nano graded silver-based low temperature conductive composite paste was developed for printing conductive patterns on flexible substrates.The conductive phase includesmulti-scale flake and spherical silver powders, with bisphenol F epoxy resin as the binder. Butyl butyrate, 2-(2-butoxyethoxy) ethanol, and diethylene glycol monobutyl ether acetate were selected as organic solvents. Using DSC, TG, surface morphology, viscosity, and resistivity analyses, we investigated the effects of these solvents with different boiling points on the conductivity and curing behavior of the low temperature paste. After screen-printed onto polyimide film, the paste demonstrated low resistivity (3×10^–5 Ωˑcm) and robust mechanical stability.Its resistance increased from 1.4 Ω to only 1.5 Ω after 3000 bending cycles. The adhesion strength of the printed pattern was assessed via a tape test.The pasteshowedgood comprehensive performance, when applied in thin-film switches and light-emitting logo devices. These results highlight its potential for flexible electronicsapplications and provide valuable insights for advancing flexible conductive circuits.

The structural, morphological, thermal, electrical, thermoelectrical and magnetic properties of Mn₂VAl Heusler alloy particles were systematically investigated. The Rietveld refinement confirms the formation of L2₁ structure for the sample annealed at 900 °C for 96 h. In addition the prepared alloy thermally stable up to 900 °C, confirmed by thermogravimetric analysis it resembles extreme thermal stability. Hall measurement shows a positive carrier concentration correlates p-type conducting behaviour and the bandgap found to be 1.18 eV. The alloy exhibits maximum power factor value of 247.28 μWcm⁻¹ K⁻² at 573 K. The magnetic measurement shows ferrimagnetic nature with low coercivity characteristics of soft magnetic nature. Notably, the Curie temperature was found to be 793 K significantly higher than previous reported theoretically and experimentally values for Mn₂VAl Heusler alloy. The combination of low magnetization, high Curie temperature and small energy consumption for magnetization switching suggests that Mn₂VAl is a promising candidate for spin injection and spintronics devices applications.