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High sensitive MSM-configured UV photodetector based on c-axis-oriented Mg-doped ZnO thin films 基于c轴取向镁掺杂ZnO薄膜的高灵敏度msm配置紫外光电探测器
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-22 DOI: 10.1007/s10854-026-16577-6
R. Akash, V. Ganesh, M. Thirumoorthi, I. S. Yahia, D. Deivatamil, S. Shek Dhavud

The Mg-doped zinc oxide thin films with different concentrations were fabricated using the nebulizer spray pyrolysis process for UV photodetector applications in metal–semiconductor–metal (MSM) configuration. All the produced thin films were found to be polycrystalline type and have a hexagonal crystal structure exhibiting a strong c-axis orientation, according to X-ray diffraction examination. The scanning electron microscopy pictures exposes that the surface covered by flakes and grains type particles and well covered without any cracks. The water contact angle measurement notices diminishing of surface roughness. The maximum optical absorption of the film is approximately ~ 3.73% in the UV region for the 3% Mg-doped ZnO film. The optical band gap decreases with lower Mg concentrations and significantly increases at higher Mg doping concentrations. The photoluminescence spectra reveal the presence of defects such as zinc interstitials, oxygen vacancies, and anti-site defects in the obtained thin films. According to Hall Effect measurements, the produced thin films exhibit n-type conductivity with low resistivity (2.10 × 10−2 Ω cm) and higher carrier concentrations (4.34 × 1019 cm−3) at a 3% Mg concentration. The fabricated thin-film photodetector showed a better response to UV exposure, with photocurrent increasing up to 10.629 µA. At a 3% Mg concentration, the photo-sensing capabilities, like detectivity, EQE, and responsivity, are enhanced.

采用雾化器喷雾热解法制备了不同浓度的mg掺杂氧化锌薄膜,用于金属-半导体-金属(MSM)结构的紫外光电探测器。x射线衍射结果表明,所制备的薄膜均为多晶型,具有强c轴取向的六边形晶体结构。扫描电镜照片显示,表面覆盖有片状和粒状颗粒,覆盖良好,无任何裂纹。水接触角测量显示表面粗糙度减小。3% mg掺杂ZnO薄膜在紫外区的最大光吸收约为~ 3.73%。光学带隙随Mg掺杂浓度的降低而减小,随Mg掺杂浓度的升高而显著增大。光致发光光谱显示薄膜中存在锌间隙、氧空位和反位缺陷。根据霍尔效应测量,制备的薄膜在3% Mg浓度下具有低电阻率(2.10 × 10−2 Ω cm)和较高载流子浓度(4.34 × 1019 cm−3)的n型电导率。制备的薄膜光电探测器对紫外曝光有较好的响应,光电流增大到10.629µa。在3% Mg浓度下,光敏能力,如探测性、EQE和响应性得到增强。
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引用次数: 0
Effects of different sequence doping LiF on microstructure and dielectric properties of BCST ceramics 不同顺序掺杂LiF对BCST陶瓷微观结构和介电性能的影响
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-22 DOI: 10.1007/s10854-026-16659-5
Hongxing Han, Jiaqi Cao, Fan Chen, Yanchun Hu

With the increasing focus on environmental issues, lead-free perovskite ceramics Ba0.83Ca0.105Sr0.065TiO3 (BCST) are promising candidates for dielectric and energy storage applications. To optimize the preparation process and enhance the performance of ceramics, a traditional high-temperature solid-state method has been used to fabricate BCST ceramics with 4 mol% LiF as a sintering aid added at three different sequences: before calcination (BLiFCST), after calcination (BCLiFST), and after sintering (BCSLiFT). The results indicated that all BCST-LiF ceramics exhibited a pure tetragonal perovskite structure, and LiF effectively reduced the sintering temperature from above 1250 ℃ (for pure BCST) to 1200 ℃. Among the three addition sequences, BCLiFST ceramics achieved the highest densification with dense grain arrangement and fewer surface pores. The BCLiFST ceramics also showed the optimal dielectric and ferroelectric properties: a high dielectric constant (ɛr = 18,114) and low dielectric loss (tanδ = 0.0103) at room temperature, along with thin-waisted hysteresis loops induced by [LiTi-FO]2− defect dipoles. For energy storage performance, BCLiFST ceramics exhibited a recoverable energy density of 0.15 J/cm3 and energy storage efficiency of 58% under an electric field of 28 kV/cm. These findings demonstrate that adding LiF after calcination is an effective strategy to lower the sintering temperature and optimize the comprehensive performance of BCST ceramics, providing a promising approach for the preparation of high-performance lead-free dielectric ceramics.

随着人们对环境问题的日益关注,无铅钙钛矿陶瓷Ba0.83Ca0.105Sr0.065TiO3 (BCST)在介电和储能领域具有广阔的应用前景。为了优化制备工艺,提高陶瓷的性能,采用传统的高温固相法,以4mol % LiF作为助烧剂,在焙烧前(BLiFCST)、焙烧后(BCLiFST)和烧结后(BCSLiFT)三种不同的顺序添加BCST陶瓷。结果表明,所有BCST-LiF陶瓷均呈现纯四方钙钛矿结构,LiF有效地将烧结温度从1250℃以上(纯BCST)降低到1200℃。在三种添加序列中,BCLiFST陶瓷致密化程度最高,晶粒排列致密,表面孔隙较少。BCLiFST陶瓷还表现出最佳的介电和铁电性能:在室温下具有高介电常数(r = 18,114)和低介电损耗(tanδ = 0.0103),并具有由[LiTi-FO]2−缺陷偶极子诱导的细腰磁滞回线。在28 kV/cm的电场下,BCLiFST陶瓷的可回收能量密度为0.15 J/cm3,储能效率为58%。研究结果表明,在煅烧后添加LiF是降低烧结温度、优化BCST陶瓷综合性能的有效策略,为制备高性能无铅介电陶瓷提供了一条有前景的途径。
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引用次数: 0
Stacking pattern effect on the energy storage performance of PLZT-based relaxor-ferroelectric/antiferroelectric multilayer thin film capacitors prepared by sol–gel methods 堆积模式对溶胶-凝胶法制备plz基弛豫-铁电/反铁电多层薄膜电容器储能性能的影响
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-22 DOI: 10.1007/s10854-026-16666-6
Chang Gao, Lijuan Huang, Qi Liu, Shize Wu, Zedong Xu, Chunlin Zhao, Xiao Wu, Min Gao, Cong Lin

Lead-based multilayer thin film capacitors with excellent energy storage performances have great application potential. However, the effect of stacking patterns on the dielectric behaviors has not been well investigated, especially for the multilayer thin films prepared by chemical solution methods. Here, the relaxor ferroelectric (RFE) (Pb0.92La0.08)(Zr0.65Ti0.35)O3 and antiferroelectric (AFE) (Pb0.98La0.02)(Zr0.95Ti0.05)O3 were chosen to construct diverse multilayer thin film capacitors with different RFE/AFE stacking patterns. Based on their crystal structure, dielectric features, and energy storage behaviors, the effect of stacking orders and AFE phase thicknesses on the capacitor performances were discussed from the perspectives of the positive and negative interface contribution. A superior recoverable energy density of 26.28 J cm−3 was achieved at a breakdown strength of 3.19 MV cm−1, accompanied with thermal stability up to 170 °C, frequency stability up to 2 kHz, and fatigue endurance after 106 charging-discharging cycles. The experimental results and related discussion will support the research and the industrialization of multilayer thin film capacitors.

铅基多层薄膜电容器具有优异的储能性能,具有很大的应用潜力。然而,堆积模式对介电行为的影响尚未得到很好的研究,特别是对化学溶液法制备的多层薄膜。本文选择弛豫铁电(RFE) (Pb0.92La0.08)(Zr0.65Ti0.35)O3和反铁电(AFE) (Pb0.98La0.02)(Zr0.95Ti0.05)O3,构建了具有不同RFE/AFE堆叠模式的多层薄膜电容器。基于它们的晶体结构、介电特性和储能性能,从正负界面贡献的角度讨论了堆叠顺序和AFE相厚度对电容器性能的影响。在击穿强度为3.19 MV cm−1时,可回收能量密度达到26.28 J cm−3,热稳定性高达170°C,频率稳定性高达2 kHz, 106次充放电循环后的疲劳耐久性。实验结果和相关讨论将为多层薄膜电容器的研究和产业化提供支持。
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引用次数: 0
Optical switching and nonlinear optical properties of plasmonic silver in sol–gel silica 溶胶-凝胶二氧化硅中等离子体银的光开关和非线性光学性质
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-21 DOI: 10.1007/s10854-025-16498-w
S. Suchithra, Vijayakumar Sadasivan Nair, Saravana Kumar, Vinoy Thomas, Remya Muralimanohar, Hubert Joe, Alice Noble

The optical switching behavior of sol–gel–derived silver-doped silica (Ag-SiO2) nanocomposites is demonstrated in this study. The formation of nanocomposites with varying Ag concentrations was confirmed through structural, optical, and morphological studies. The incorporation of Ag nanoparticles generated a pronounced localized surface plasmon resonance, significantly enhancing both the nonlinear absorption and refractive nonlinearities. Z-scan measurements performed using 532 nm, 5 ns laser pulses revealed strong reverse saturable absorption with an optical limiting threshold of 4.12 J/cm2, accompanied by a clear self-focusing behavior. The nanocomposites exhibited a marked increase in third-order susceptibility, reaching χ(3) ≈ 10⁻13 esu, and a corresponding increase in the nonlinear refractive index. Increasing the Ag loading strengthens the local electromagnetic field confinement and promotes plasmon-assisted electronic transitions, yielding n₂ enhancement factors exceeding an order of magnitude compared with undoped silica. These findings establish Ag–SiO₂ nanocomposites as an efficient plasmonically driven platform for nanoscale photonic switching and intensity-dependent optical modulation.

本研究证明了溶胶-凝胶衍生的掺银二氧化硅(Ag-SiO2)纳米复合材料的光开关行为。通过结构、光学和形态学研究证实了不同银浓度的纳米复合材料的形成。银纳米粒子的掺入产生了明显的局部表面等离子体共振,显著增强了非线性吸收和折射非线性。使用532 nm, 5 ns激光脉冲进行的z扫描测量显示出强的反向饱和吸收,光学极限阈值为4.12 J/cm2,并伴有明显的自聚焦行为。纳米复合材料的三阶磁化率明显增加,达到χ(3)≈10⁻13 esu,非线性折射率也相应增加。增加Ag的负载增强了局部电磁场约束,促进了等离子体辅助电子跃迁,与未掺杂的二氧化硅相比,产生了超过一个数量级的n₂增强因子。这些发现确立了ag - sio2纳米复合材料作为纳米级光子开关和强度依赖光调制的有效等离子体驱动平台。
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引用次数: 0
Bullet-like ZnFe2O4 for acetone gas sensing application 子弹状ZnFe2O4用于丙酮气体传感
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-21 DOI: 10.1007/s10854-026-16618-0
Yan Lu, Yonghua Ma, Xiaoli Xu, Shuyi Ma

This study reports the synthesis of a novel bullet-like ZnFe2O4 via a simple hydrothermal method followed by thermal treatment. The crystal structure and morphology of the synthesized ZnFe2O4 were characterized using various techniques, including X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), energy dispersive X-ray (EDX), X-ray photoelectron spectroscopy (XPS), and inductively coupled plasma optical emission spectrometry (ICP-OES) analysis. For comparative purposes, ZnO was also produced employing the same synthesis method. The investigation revealed that the optimal working temperature for the gas sensor utilizing bullet-like ZnFe2O4 is 140 °C, which is 120 °C lower than that of the ZnO-based sensor (260 °C). At this optimal temperature, the ZnFe2O4 sensor exhibits favorable performance toward 100 ppm acetone, with a response value of 76.14, rapid response time (11 s) and recovery time (15 s), as well as good selectivity and stability. These results indicate that bullet-like ZnFe2O4 has potential for gas sensing applications, particularly for the selective detection of acetone gas in low-power devices, though its sensing performance may be further improved by structural modification or composite doping.

本文报道了一种新型子弹状ZnFe2O4的合成方法,采用简单的水热法,然后进行热处理。利用x射线衍射(XRD)、场发射扫描电镜(FESEM)、透射电镜(TEM)、能量色散x射线(EDX)、x射线光电子能谱(XPS)和电感耦合等离子体发射光谱(ICP-OES)等技术对合成的ZnFe2O4的晶体结构和形貌进行了表征。为了便于比较,也采用相同的合成方法制备了氧化锌。研究表明,采用子弹状ZnFe2O4制成的气体传感器的最佳工作温度为140℃,比基于zno的传感器(260℃)低120℃。在此温度下,ZnFe2O4传感器对100 ppm丙酮的响应值为76.14,响应时间短(11 s),恢复时间短(15 s),具有良好的选择性和稳定性。这些结果表明,子弹状ZnFe2O4具有气敏应用的潜力,特别是在低功率器件中选择性检测丙酮气体,尽管其传感性能可能通过结构修饰或复合掺杂进一步提高。
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引用次数: 0
Interface engineered carbon–polymer interlayers for high efficiency supercapacitor electrodes 用于高效率超级电容器电极的界面工程碳聚合物中间层
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-21 DOI: 10.1007/s10854-026-16621-5
M. Shimna, Smita Mohanty

The current study focusses on a carbon–polymer primer coating on stainless steel (SS) mesh current collectors (CC) as a scalable and cost-effective interface engineering strategy. Electrodes fabricated on primed stainless steel (PSS) mesh were systematically compared with those on bare stainless steel (BSS) mesh to evaluate the influence of the primer layer which composed of carbon black (CB) and polyvinylidene fluoride (PVDF) in a ratio of 95:5. This thin layer coating forms a robust and uniform conductive network, effectively reducing the contact resistance, and enhancing ion accessibility. The as fabricated device (Mo–MnO2//AC) revealed that, PSS electrodes were able to maintain 75% of their initial capacitance at an elevated current density of 10 A g−1, compared to BSS electrodes (only 31%). Notably, even with reduced conductive additive content, the PSS electrode delivered excellent cycling stability, retaining 91.5% of its capacitance after 5000 cycles. This strategy offers a cost-effective and scalable method for improving the performance of pseudocapacitor electrodes, highlighting the potential of carbon–polymer primer coatings as a valuable tool in practical energy storage applications.

目前的研究重点是将碳聚合物底漆涂在不锈钢(SS)网状集流器(CC)上,作为一种可扩展且具有成本效益的界面工程策略。系统地比较了涂底不锈钢(PSS)网与裸不锈钢(BSS)网电极的制备效果,评价了由炭黑(CB)与聚偏氟乙烯(PVDF)按95:5的比例组成的底漆层对电极制备效果的影响。这种薄层涂层形成了坚固而均匀的导电网络,有效地降低了接触电阻,提高了离子的可及性。制备的器件(Mo-MnO2 //AC)表明,在10 A g−1的电流密度下,PSS电极能够保持75%的初始电容,而BSS电极只能保持31%。值得注意的是,即使导电添加剂含量降低,PSS电极也提供了出色的循环稳定性,在5000次循环后保持了91.5%的电容。该策略为提高伪电容器电极的性能提供了一种经济有效且可扩展的方法,突出了碳聚合物底漆作为实际储能应用中有价值的工具的潜力。
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引用次数: 0
Versatile NBR/EPDM reinforced Cu–Al–Zn alloy composites with inherent soft magnetic behavior 具有固有软磁性能的通用丁腈橡胶/三元乙丙橡胶增强Cu-Al-Zn合金复合材料
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-21 DOI: 10.1007/s10854-025-16480-6
Doaa S. Mahmoud, Adel A. Koriem, Salwa H. El-Sabbagh, Samaa R. Salem

Herein, multifunctional NBR/EPDM elastomeric composites were developed by reinforcing the matrix with a Cu–Al–Zn alloy and functionalizing it using 3-(trimethoxysilyl)propyl methacrylate (TMSPM) as a coupling agent. The aim was to enhance soft magnetic behavior while maintaining balanced mechanical, thermal, dielectric, and curing performance. Composites containing 2.5–35 phr alloy (NE2, NE3, NE5, NE8) were examined using rheometry, stress relaxation, DSC, TGA, tensile testing, SEM, magnetic hysteresis, and broadband dielectric spectroscopy. TMSPM promoted strong filler–matrix adhesion, enabling uniform dispersion at moderate alloy contents. NE2–NE3 exhibited improved torque response, higher tensile strength, reduced tan δ, and lower swelling, confirming increased crosslink density and stable network formation. DSC and TGA revealed enhanced chain packing and thermal stability, while magnetic analysis verified soft magnetic behavior, with NE3 offering the optimal balance of mechanical integrity and magnetization. Dielectric measurements showed increased permittivity and conductivity with alloy addition, where NE3 displayed a thermally responsive dielectric profile and NE8 achieved the highest conductivity and strongest estimated EMI attenuation at high frequency. Excessive loading (NE8) caused agglomeration and reduced mechanical uniformity. Overall, combining Cu–Al–Zn alloy with TMSPM produced elastomeric composites with enhanced mechanical, thermal, magnetic, and dielectric properties suitable for flexible magnetic components, adaptive damping systems, and lightweight EMI-absorbing applications.

本文采用Cu-Al-Zn合金增强基体,并以3-(三甲氧基硅基)甲基丙烯酸丙酯(TMSPM)作为偶联剂对其进行功能化,制备了多功能NBR/EPDM弹性复合材料。其目的是增强软磁性能,同时保持平衡的机械、热、介电和固化性能。采用流变学、应力松弛、DSC、TGA、拉伸测试、SEM、磁滞、宽带介电光谱等方法对含2.5-35 phr合金(NE2、NE3、NE5、NE8)的复合材料进行了表征。TMSPM促进了填料与基体的强附着力,在合金含量适中的情况下能够实现均匀分散。NE2-NE3表现出更好的扭矩响应、更高的抗拉强度、更低的tan δ和更低的膨胀,证实了交联密度的增加和稳定的网络形成。DSC和TGA分析表明,NE3的链填充性和热稳定性增强,而磁性分析证实了其软磁行为,NE3在机械完整性和磁化强度方面达到了最佳平衡。电介质测量结果表明,添加合金后,NE3的介电常数和电导率均有所增加,其中NE3表现出热响应的介电曲线,NE8的电导率最高,高频估计EMI衰减最强。过多的载荷(NE8)导致结块,降低了机械均匀性。总体而言,将Cu-Al-Zn合金与TMSPM相结合,生产出具有增强机械、热、磁和介电性能的弹性复合材料,适用于柔性磁性元件、自适应阻尼系统和轻质emi吸收应用。
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引用次数: 0
Efficient preparation of high-frequency wave-absorbing SiC/graphene composite powder 高频吸波SiC/石墨烯复合粉体的高效制备
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-21 DOI: 10.1007/s10854-026-16654-w
Yutong Liu, Shiming Hao, Haozhan Wu, Sitong Cai, Jingpei Xie

The 3C-SiC/graphene composite powder was successfully synthesized through a simple carbothermal reduction method using expanded graphite and silicon powder. The effects of catalyst content, temperature, and C/Si molar ratio on the synthesized products were systematically investigated. Results demonstrated that the complete formation temperature of 3C-SiC decreased to 1350 °C with the addition of 3wt% Fe catalyst. Preparation efficiency is enhanced, and energy consumption is reduced. Simultaneously, the Fe catalyst promoted the growth of Silicon Carbide Nanowires(SiCNWs) and enhanced electromagnetic wave absorption intensity. When the expanded graphite was appropriately excessive (C/Si molar ratio of 1.1:1), graphene was in situ formed in the products at 1350 °C. This composite powder exhibits the minimum reflection loss (RLmin) of − 27.24 dB in the high-frequency range of 14–18 GHz. The synergistic effect between graphene and 3C-SiC could enhance dielectric loss, optimize impedance matching, and broaden absorption bandwidth. The 3C-SiC/graphene composite powder shows promising potential as an excellent electromagnetic wave absorbing material.

以膨胀石墨和硅粉为原料,通过简单的碳热还原法制备了3C-SiC/石墨烯复合粉体。系统地考察了催化剂用量、温度和C/Si摩尔比对合成产物的影响。结果表明,加入3wt% Fe催化剂后,3C-SiC的完全形成温度降至1350℃。提高了制备效率,降低了能耗。同时,Fe催化剂促进了碳化硅纳米线(SiCNWs)的生长,增强了电磁波吸收强度。当膨胀石墨适当过量(C/Si摩尔比为1.1:1)时,石墨烯在1350℃下在产物中原位形成。该复合粉体在14 ~ 18 GHz高频范围内的最小反射损耗(RLmin)为−27.24 dB。石墨烯与3C-SiC之间的协同效应可以提高介质损耗,优化阻抗匹配,拓宽吸收带宽。3C-SiC/石墨烯复合粉末作为一种优良的电磁波吸收材料,具有广阔的应用前景。
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引用次数: 0
Dual-functional p-NiO@CuO/n-si heterostructures for MIS photodiodes under varying light intensities and photocatalytic degradation of Rhodamine-B under visible light 不同光强下MIS光电二极管的双功能p-NiO@CuO/n-si异质结构和可见光下罗丹明- b的光催化降解
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-21 DOI: 10.1007/s10854-026-16657-7
Elumalai Arulkumar, Gopinath Dhamodaran, Sethuramachandran Thanikaikarasan, A. Ibrahim

The NiO@CuO nanocomposite (NC) was synthesized via an ionic precipitation route and systematically characterized to confirm its structural, optical, and chemical properties. XRD revealed cubic NiO and monoclinic CuO phases with an average crystallite size of 23.25 nm, while UV–Vis analysis showed an indirect band gap of 1.29 eV. XPS further verified the elemental composition and oxidation states of Ni, Cu, and O. The cross-section revealed a well-adhered NiO@CuO particles, and TEM/SAED results showed an agglomerated, polycrystalline nature. The 30 mg NiO@CuO NC exhibited efficient photocatalytic degradation of Rhodamine-B (RhB), achieving 88.72% at pH 9 ± 0.1. Radical quenching studies confirmed OH as the dominant reactive species. When fabricated as a NiO@CuO/n-Si photodiode, the device demonstrated strong photoresponse under illumination, with an ideality factor (n) of 3.84, barrier height (ФB) of 0.73 eV, responsivity (R) of 361.52 mA/W, and detectivity (D*) of 2.87 × 1011 Jones at 100 mW/cm2. These results highlight the potential of NiO@CuO NC for photocatalytic and optoelectronic applications.

通过离子沉淀法合成了NiO@CuO纳米复合材料(NC),并对其结构、光学和化学性质进行了系统表征。XRD分析显示,该材料的立方NiO和单斜CuO相平均晶粒尺寸为23.25 nm,而UV-Vis分析显示其间接带隙为1.29 eV。XPS进一步验证了Ni、Cu和o的元素组成和氧化态。横截面显示出粘附良好的NiO@CuO颗粒,TEM/SAED结果显示出团聚的多晶性质。30 mg NiO@CuO NC在pH为9±0.1时对Rhodamine-B (RhB)的光催化降解率为88.72%。自由基猝灭研究证实•OH是主要的反应物质。当制成NiO@CuO/n- si光电二极管时,该器件在光照下表现出较强的光响应,理想因子(n)为3.84,势垒高度(ФB)为0.73 eV,响应率(R)为361.52 mA/W,在100 mW/cm2下的探测率(D*)为2.87 × 1011 Jones。这些结果突出了NiO@CuO NC在光催化和光电子应用方面的潜力。
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引用次数: 0
Effect of the addition of Sr(Sn0.25Ti0.75)O3 on the dielectric properties in NaNbO3 添加Sr(Sn0.25Ti0.75)O3对NaNbO3介电性能的影响
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-20 DOI: 10.1007/s10854-026-16652-y
Imane Layaida, Samia Aydi, Souad Chkoundali, Abdelhedi Aydi

Lead-free perovskite ceramics Sr1-xNax(Sn0.25Ti0.75)1-xNbxO3 (0.6 ≤ x ≤ 0.9), denoted SNSTNₓ, were synthesized by the conventional solid-state route and sintered at 1350 °C. X-ray diffraction analysis confirms the formation of a single-phase perovskite structure with tetragonal symmetry (space group P4mm) for all compositions. Dielectric measurements performed as a function of temperature and frequency reveal two distinct electrical behaviors depending on composition. Samples with x ≥ 0.8 exhibit classical ferroelectric characteristics with a well-defined, frequency-independent Curie temperature, whereas compositions with x < 0.8 show relaxor-like behavior characterized by diffuse phase transitions and strong frequency dispersion of the dielectric permittivity. The relaxor nature is further supported by deviation from the Curie–Weiss law and a diffuseness parameter γ ≈ 1.7. Ferroelectric hysteresis measurements performed for x = 0.9 confirm ferroelectricity, with a remanent polarization of 0.0125 µF mm⁻2 and a coercive field of 5 V mm⁻1. The observed evolution of dielectric behavior is attributed to structural disorder induced by simultaneous A-site (Sr2⁺/Na⁺) and B-site (Sn4⁺/Ti4⁺/Nb5⁺) substitutions, which modify lattice distortion and reduce the phase transition temperature. These results indicate that SNSTNₓ ceramics are promising lead-free materials for temperature-stable dielectric applications.

采用常规固相法合成无铅钙钛矿陶瓷Sr1-xNax(Sn0.25Ti0.75)1-xNbxO3(0.6≤x≤0.9),记为SNSTNₓ,并在1350℃下烧结。x射线衍射分析证实,所有成分均形成具有四方对称(空间群P4mm)的单相钙钛矿结构。作为温度和频率的函数进行的介电测量揭示了两种不同的电行为,这取决于成分。x≥0.8的样品表现出典型的铁电特性,具有明确的、与频率无关的居里温度,而x <; 0.8的样品表现出类似弛豫的行为,其特征是漫射相变和强介电常数的频率色散。与居里-魏斯定律的偏差和扩散参数γ≈1.7进一步支持了弛豫性质。在x = 0.9时进行的铁电滞后测量证实了铁电性,剩余极化为0.0125µF mm⁻2,矫顽力场为5 V mm⁻1。所观察到的介电行为的演变归因于同时取代a位点(Sr2 + /Na +)和b位点(Sn4 + /Ti4 + /Nb5 +)导致的结构紊乱,这改变了晶格畸变,降低了相变温度。这些结果表明,SNSTNₓ陶瓷是一种很有前途的无铅温度稳定介质材料。
{"title":"Effect of the addition of Sr(Sn0.25Ti0.75)O3 on the dielectric properties in NaNbO3","authors":"Imane Layaida,&nbsp;Samia Aydi,&nbsp;Souad Chkoundali,&nbsp;Abdelhedi Aydi","doi":"10.1007/s10854-026-16652-y","DOIUrl":"10.1007/s10854-026-16652-y","url":null,"abstract":"<div><p>Lead-free perovskite ceramics Sr<sub>1-x</sub>Na<sub>x</sub>(Sn<sub>0.25</sub>Ti<sub>0.75</sub>)<sub>1-x</sub>Nb<sub>x</sub>O<sub>3</sub> (0.6 ≤ <i>x</i> ≤ 0.9), denoted SNSTNₓ, were synthesized by the conventional solid-state route and sintered at 1350 °C. X-ray diffraction analysis confirms the formation of a single-phase perovskite structure with tetragonal symmetry (space group <i>P4mm</i>) for all compositions. Dielectric measurements performed as a function of temperature and frequency reveal two distinct electrical behaviors depending on composition. Samples with <i>x</i> ≥ 0.8 exhibit classical ferroelectric characteristics with a well-defined, frequency-independent Curie temperature, whereas compositions with <i>x</i> &lt; 0.8 show relaxor-like behavior characterized by diffuse phase transitions and strong frequency dispersion of the dielectric permittivity. The relaxor nature is further supported by deviation from the Curie–Weiss law and a diffuseness parameter <i>γ</i> ≈ 1.7. Ferroelectric hysteresis measurements performed for <i>x</i> = 0.9 confirm ferroelectricity, with a remanent polarization of 0.0125 µF mm⁻<sup>2</sup> and a coercive field of 5 V mm⁻<sup>1</sup>. The observed evolution of dielectric behavior is attributed to structural disorder induced by simultaneous A-site (Sr<sup>2</sup>⁺/Na⁺) and B-site (Sn<sup>4</sup>⁺/Ti<sup>4</sup>⁺/Nb<sup>5</sup>⁺) substitutions, which modify lattice distortion and reduce the phase transition temperature. These results indicate that SNSTNₓ ceramics are promising lead-free materials for temperature-stable dielectric applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Journal of Materials Science: Materials in Electronics
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