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2016 IEEE International Solid-State Circuits Conference (ISSCC)最新文献

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A 5G Sub-6GHz Zero-IF and mm-Wave IF Transceiver with MIMO and Carrier Aggregation 具有MIMO和载波聚合的5G Sub-6GHz零中频和毫米波中频收发器
Pub Date : 2019-01-01 DOI: 10.1109/ISSCC.2019.8662417
B. Jann, Greg Chance, Ankur Guha Roy, Aishwarya Balakrishnan, Niranjan Karandikar, Thomas William Brown, Xi Li, Brandon Davis, Jose Luis Ceballos, Nebil Tanzi, Kurt Hausmann, Hyun Yoon, Yen-ling Huang, Amit Freiman, Bruce Geren, Peter Pawliuk, Wayne Ballantyne
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引用次数: 4
A 256×256 40nm/90nm CMOS 3D-Stacked 120dB Dynamic-Range Reconfigurable Time-Resolved SPAD Imager 256×256 40nm/90nm CMOS 3d堆叠120dB动态范围可重构时间分辨SPAD成像仪
Pub Date : 2019-01-01 DOI: 10.1109/ISSCC.2019.8662355
Robert K. Henderson, N. Johnston, S. W. Hutchings, I. Gyöngy, T. A. Abbas, N. Dutton, Max Tyler, Susan Chan, Jonathan Leach
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引用次数: 6
Session 20 overview: Flash-memory solutions: Memory subcommittee 第20部分概述:闪存解决方案:内存小组委员会
Pub Date : 2018-02-01 DOI: 10.1109/ISSCC.2018.8310320
Ki-Tae Park, Yan Li, Leland Chang
Continued proliferation of semiconductors for a smarter society drives the evolution of flash memory technologies towards higher density, lower power consumption, and lower cost. This year, a new generation of 3D NAND Flash memory with up to 96-stacked word-line layers is introduced. For the first time, a memory with over 1Tb density is demonstrated using a 4b/cell 3D NAND technology. An ultra-low latency flash controller with a new high-speed 3D NAND is proposed in order to fill a large performance gap between DRAM and Flash memories.
智能社会对半导体的持续发展推动了闪存技术向更高密度、更低功耗和更低成本的方向发展。今年,推出了新一代3D NAND闪存,最多可堆叠96层字行层。首次使用4b/cell 3D NAND技术展示了超过1Tb密度的存储器。为了填补DRAM和闪存之间的巨大性能差距,提出了一种具有新型高速3D NAND的超低延迟闪存控制器。
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引用次数: 0
Session 17 overview: Technologies for health and society: Technology directions subcommittee 第17届会议概述:促进健康和社会的技术:技术方向小组委员会
Pub Date : 2018-02-01 DOI: 10.1109/ISSCC.2018.8310293
P. Mercier, Long Yan, M. Nagata
Advances in sensors, low-power circuits, and integration technologies are helping to revolutionize industries ranging from agriculture to healthcare. This session highlights innovations in connected sensors for improved food production, diagnostic imaging, physiochemical sensing, and neurophysiology. The first paper is an invited paper, and describes how advances in sensors, circuits, and algorithms can help improve the efficiency of food production. The second paper demonstrates a multi-camera capsule endoscope with integrated high-throughput communications. The next three papers describe sensing systems that are powered from and/or measure chemical parameters in gas for industrial applications, or in bodily fluids for healthcare applications. Subsequent papers demonstrate advances in transcranial communications, optoelectronic neural recorders, multi-modal wearable brain imagers, and closed-loop neural implants with integrated support vector machine classifiers.
传感器、低功耗电路和集成技术的进步正在帮助从农业到医疗保健等行业发生革命性变化。本次会议重点介绍了用于改善食品生产、诊断成像、理化传感和神经生理学的连接传感器的创新。第一篇论文是一篇受邀论文,描述了传感器、电路和算法的进步如何帮助提高食品生产的效率。第二篇论文展示了一种集成高通量通信的多摄像头胶囊内窥镜。接下来的三篇论文描述了由工业应用中的气体或医疗保健应用中的体液中的化学参数供电和/或测量的传感系统。随后的论文展示了经颅通信、光电神经记录器、多模态可穿戴脑成像仪和集成支持向量机分类器的闭环神经植入物的进展。
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引用次数: 0
Session 28 overview: Wireless connectivity: Wireless subcommittee 第28部分概述:无线连接:无线小组委员会
Pub Date : 2018-02-01 DOI: 10.1109/ISSCC.2018.8310373
H. Luong, Kyoohyun Lim, S. Pellerano
Connecting things wirelessly requires optimization from multidisciplinary areas. This session will introduce state-of-the-art wireless transceivers supporting ultra-lower-power IoT and connectivity solutions. In this session, a high-performance WLAN SoC supporting up to 802.11ax 1024QAM will be presented. Then, two-blockers-tolerant high-sensitivity Bluetooth Low-Energy (BLE) transceivers in 65nm and 40nm CMOS will be presented followed by a best-in-class performance all-digital PLL for BLE in 16nm FinFET technology, and an energy-harvesting BLE transmitter in 28nm CMOS. An ultra-low-power wakeup receiver enabling event-driven sensor nodes and an ultrasonic wake-up receiver using a precharged capacitive micro-machined ultrasound transducer will be shown. Finally, a 5.8GHz near-field radio achieving the smallest die size of 116μm×116μm will be presented in this session.
无线连接需要多学科领域的优化。本次会议将介绍最先进的无线收发器,支持超低功耗物联网和连接解决方案。在本次会议上,将介绍支持802.11ax 1024QAM的高性能WLAN SoC。然后,将介绍采用65nm和40nm CMOS工艺的双阻挡高灵敏度蓝牙低功耗(BLE)收发器,然后是采用16nm FinFET技术的同类最佳性能全数字锁相环,以及采用28nm CMOS工艺的能量收集BLE发射器。将展示一种超低功耗唤醒接收器,支持事件驱动传感器节点,以及一种使用预充电电容式微机械超声换能器的超声波唤醒接收器。最后,将在本次会议上展示实现最小芯片尺寸116μm×116μm的5.8GHz近场无线电。
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引用次数: 0
Session 31 overview: Computation in memory for machine learning: Technology directions and memory subcommittees 第31场概述:机器学习的内存计算:技术方向和内存小组委员会
Pub Date : 2018-02-01 DOI: 10.1109/ISSCC.2018.8310396
N. Verma, F. Hamzaoglu, M. Nagata, Leland Chang
Many state-of-the-art systems for machine learning are limited by memory in terms of the energy they require and the performance they can achieve. This session explores how this bottleneck can be overcome by emerging architectures that perform computation inside the memory array. This necessitates unconventional, typically mixed-signal, circuits for computation, which exploit the statistical nature of machine-learning applications to achieve high algorithmic performance with substantial energy and throughput gains. Further, the architectures serve as a driver for emerging memory technologies, exploiting the high-density and nonvolatility these offer towards increased scale and efficiency of computation. The innovative papers in this session provide concrete demonstrations of this promise, by going beyond conventional architectures.
许多最先进的机器学习系统在所需的能量和可以实现的性能方面受到内存的限制。本节将探讨如何通过在内存数组内执行计算的新兴架构来克服这一瓶颈。这就需要非常规的、典型的混合信号计算电路,它利用机器学习应用的统计特性,以大量的能量和吞吐量增益来实现高算法性能。此外,这些架构还可以作为新兴内存技术的驱动力,利用这些技术提供的高密度和非易失性来提高计算的规模和效率。本次会议上的创新论文通过超越传统架构,提供了这一承诺的具体演示。
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引用次数: 0
Session 23 overview: LO generation: RF subcommittee 第23届会议概述:LO生成:射频小组委员会
Pub Date : 2018-02-01 DOI: 10.1109/ISSCC.2018.8310335
Hyunchol Shin, A. Bevilacqua, P. Wambacq
The session presents LO-generation systems aimed at 5G communications and sub-mm-wave sensing systems. The first three papers focus on mm-wave CMOS LOs for multiband 5G systems and highlight the importance of injection-locked frequency multipliers and accurate quadrature generation for the 28-to-44GHz band. Then, the session continues with a BiCMOS 301.7-to-331.8GHz source and a 4GHz inverse-Class-F CMOS VCO. A quad-core BiCMOS 15GHz VCO is presented next, while a 7.4-to-14GHz CMOS PLL concludes the session.
会议介绍了面向5G通信和亚毫米波传感系统的lo生成系统。前三篇论文重点研究了多频段5G系统的毫米波CMOS LOs,并强调了28至44ghz频段注入锁定倍频器和精确正交生成的重要性。然后,继续使用BiCMOS 301.7- 331.8 ghz源和4GHz反f类CMOS压控振荡器。接下来介绍四核BiCMOS 15GHz VCO,最后介绍7.4- 14ghz CMOS锁相环。
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引用次数: 0
Session 14 overview: High-resolution ADCs: Data converter subcommittee 第14届会议概述:高分辨率adc:数据转换器小组委员会
Pub Date : 2018-02-01 DOI: 10.1109/ISSCC.2018.8310267
M. Straayer, S. Ryu, U. Moon
This session's high-resolution analog-to-digital converters (ADCs) with 12 to 19b ENOB introduce a number of advanced circuit design techniques to achieve very high performance with low power consumption. While many of the proposed designs use an efficient SAR architecture where possible for moderate resolution, higher performance is consistently enabled by delta-sigma and pipeline architectures. Precision is further enabled by techniques such as hardware re-use, calibration, dynamic element matching, chopping, and correlated double-sampling.
本次会议的12至19b ENOB高分辨率模数转换器(adc)介绍了许多先进的电路设计技术,以低功耗实现非常高的性能。虽然许多建议的设计在可能的情况下使用高效的SAR架构来实现中等分辨率,但更高的性能始终通过delta-sigma和流水线架构实现。通过硬件重用、校准、动态元素匹配、斩波和相关双采样等技术,进一步实现了精度。
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引用次数: 0
Session 5 overview: Image sensors: IMMD subcommittee 第5部分概述:图像传感器:imd小组委员会
Pub Date : 2018-02-01 DOI: 10.1109/ISSCC.2018.8310192
H. Wakabayashi, M. Ikeda
The session presents advances in image sensors covering BSI, global shuttering, organic photoconductive film, pixel scaling, dynamic vision, high frame rate imaging, 3D time-of-flight, and SPADs. The first paper, by Sony, presents a BSI global shutter with in-pixel ADC. Then, Panasonic presents a global shutter using organic film with in-pixel noise cancellation. Samsung presents a 0.9μm pixel with complete deep-trench isolation. Sony presents a low-power event-driven imager with motion detection. TSMC presents a 13.5Mpixel BSI image sensor with a readout subsampling architecture that allows 514fps at 720p. NHK presents a high-speed image sensor achieving 8K video up to 480fps. Toshiba presents a LiDAR SoC enabling range measurements up to 200m. Microsoft presents a BSI time-of-flight image sensor with 3.5μm global-shutter pixels with modulation frequencies up to 320MHz. Delft University presents a direct time-of-flight image sensor with modular SPAD-based pixel arrays fabricated in 3D-stacked 45/65nm CMOS. Finally, FBK presents a SPAD array coupled with TDCs to measure spatial correlations of entangled photons at a rate of 800kHz.
会议将介绍图像传感器的进展,包括BSI、全局快门、有机光导膜、像素缩放、动态视觉、高帧率成像、3D飞行时间和spad。索尼的第一篇论文介绍了一种带有像素内ADC的BSI全局快门。随后,松下推出了一款使用具有像素内降噪功能的有机薄膜的全局快门。三星电子推出了0.9μm像素,实现了完全的深沟隔离。索尼推出了一款具有运动检测功能的低功耗事件驱动成像仪。台积电推出了一款1350万像素的BSI图像传感器,具有读出子采样架构,可在720p下实现514fps。NHK推出了一款高速图像传感器,可实现高达480fps的8K视频。东芝推出了一款激光雷达SoC,可实现高达200米的测量距离。微软公司提出了一种具有3.5μm全局快门像素的BSI飞行时间图像传感器,调制频率高达320MHz。代尔夫特大学提出了一种直接飞行时间图像传感器,该传感器采用3d堆叠45/65nm CMOS制造的模块化spad像素阵列。最后,FBK提出了一种耦合tdc的SPAD阵列,用于测量纠缠光子在800kHz速率下的空间相关性。
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引用次数: 0
Session 12 overview: DRAM: Memory subcommittee 第12次会议概述:DRAM:内存小组委员会
Pub Date : 2018-02-01 DOI: 10.1109/ISSCC.2018.8310254
Seung-Jun Bae, W. Spirkl, Leland Chang
Demand for high-performance and high-capacity DRAMs is increasing more dramatically than in the past, due to the emergence of new areas such as machine learning, VR and AR. In line with this trend, new innovations with capacities of 16Gb and data-rate speeds of 18Gb/s/pin are introduced this year. These changes are common to high-performance computing, gaming graphics, mobile, and server fields, including artificial intelligence. Two graphics DRAM papers of the next generation GDDR6 standard show a maximum data rate of 16 to 18Gb/s/pin with single-ended signaling, and 16Gb high-density DRAMs in a 10nm process node are introduced in LPDDR4X and DDR4. HBM2 is extended to an 8H stack for 64Gb density while keeping a BW of 341GB/s.
由于机器学习、虚拟现实和增强现实等新领域的出现,对高性能和高容量dram的需求比过去急剧增长。与这一趋势相一致,今年推出了容量为16Gb、数据速率为18Gb/s/pin的创新产品。这些变化在高性能计算、游戏图形、移动和服务器领域(包括人工智能)都很常见。新一代GDDR6标准的两篇图形DRAM论文显示,单端信令的最大数据速率为16 ~ 18Gb/s/pin, LPDDR4X和DDR4中引入了10nm制程节点的16Gb高密度DRAM。HBM2扩展到8H堆栈,实现64Gb密度,同时保持341GB/s的BW。
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2016 IEEE International Solid-State Circuits Conference (ISSCC)
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