Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937886
A. Kesavan, A. D. Rao, Praveen C Ramamurthy
Enhancing the light photons which are responsible for the generation of the exciton in the photoactive layer is one of the primary ways to increase the net power conversion efficiency of solar cell. Using plasmonic metal nanoparticle is one of the well-known method to improve the solar cell performance. In this work, poly-dispersed aluminium nanoparticles (AlNPs) were embedded at the PC61BM/Al interface to investigate the effect of it on solar cell performance. It is observed that device with AlNPs at the PC61BM/Al interface showed significant enhancement in optical absorption and as a result improved JSC. It is observed that Al nanoparticles at cathode interface aids in light trapping and also reduction in series resistance. These coupled effects of optical and electrical enhancement tend to improve power conversion efficiency in the device. From this study, it is noted that addition of AlNPs modifies deep trap state distribution in the active matrix. Further, this study shows that AlNPs incorporation with ETL improves the device power conversion efficiency (PCE) mainly through the optical enhancement.
{"title":"Polydispersed Metal Nanoparticles at the Interface for Improved Optoelectronic Properties in Perovskite Photovoltaics","authors":"A. Kesavan, A. D. Rao, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8937886","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937886","url":null,"abstract":"Enhancing the light photons which are responsible for the generation of the exciton in the photoactive layer is one of the primary ways to increase the net power conversion efficiency of solar cell. Using plasmonic metal nanoparticle is one of the well-known method to improve the solar cell performance. In this work, poly-dispersed aluminium nanoparticles (AlNPs) were embedded at the PC61BM/Al interface to investigate the effect of it on solar cell performance. It is observed that device with AlNPs at the PC61BM/Al interface showed significant enhancement in optical absorption and as a result improved JSC. It is observed that Al nanoparticles at cathode interface aids in light trapping and also reduction in series resistance. These coupled effects of optical and electrical enhancement tend to improve power conversion efficiency in the device. From this study, it is noted that addition of AlNPs modifies deep trap state distribution in the active matrix. Further, this study shows that AlNPs incorporation with ETL improves the device power conversion efficiency (PCE) mainly through the optical enhancement.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"33 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74541531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937856
Bhuvnesh Kushwah, S. Kanaga, Gourab Dutta, N. Dasgupta, A. DasGupta
In this paper, we have reported high pressure oxidized thin aluminium layer as a gate dielectric for GaN-based MIS-HEMTs and studied the interface traps at Al2O3/III-Nitride interface using the capacitance-conductance method. Effect of oxygen plasma treatment prior to aluminium layer deposition has also been investigated. Significant reduction in gate leakage current has been observed in all fabricated MIS-HEMTs compared to reference HEMT in both reverse and forward bias conditions. Forward bias swing is also larger for MIS-HEMTs. Significant reduction in interface trap density was found for MIS-HEMTs with oxygen plasma treatment.
在本文中，我们报道了高压氧化薄铝层作为gan基mis - hemt的栅极介质，并使用电容-电导方法研究了Al2O3/ iii -氮化物界面的界面陷阱。研究了氧等离子体处理对铝层沉积的影响。与参考HEMT相比，在反向和正向偏置条件下，所有制造的miss -HEMT的栅漏电流都显著降低。miss - hemt的正向偏置摆动也更大。经氧等离子体处理后，mis - hemt的界面阱密度显著降低。
{"title":"Study of interface traps for GaN-based MIS-HEMTs with high pressure oxidized aluminium as gate dielectric","authors":"Bhuvnesh Kushwah, S. Kanaga, Gourab Dutta, N. Dasgupta, A. DasGupta","doi":"10.1109/icee44586.2018.8937856","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937856","url":null,"abstract":"In this paper, we have reported high pressure oxidized thin aluminium layer as a gate dielectric for GaN-based MIS-HEMTs and studied the interface traps at Al2O3/III-Nitride interface using the capacitance-conductance method. Effect of oxygen plasma treatment prior to aluminium layer deposition has also been investigated. Significant reduction in gate leakage current has been observed in all fabricated MIS-HEMTs compared to reference HEMT in both reverse and forward bias conditions. Forward bias swing is also larger for MIS-HEMTs. Significant reduction in interface trap density was found for MIS-HEMTs with oxygen plasma treatment.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77726310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937892
U. Barman, N. Goswami, S. Ghosh, R. Paily
This work describes fabrication and characterization of Field Effect Transistor (FET) biosensor incorporated with ZnO nanoparticle - Glutathione-S-Transferase (GST) protein conjugate based channel layer for detection of glutathione. Glutathione has been reported to be an important biomarker for certain types of cancer. Nanocomposite of ZnO nanoparticles and GST was synthesized to be used as the channel material for the FET structure fabricated using standard UV lithography technique. The channel material specifically detects the conjugation reaction between glutathione and 1-chloro-2,4-dinitrobenzene (CDNB) which takes place only in presence of GST. As GST in immobilized on the channel itself, presence of glutathione can be detected by dint of occurrence of the conjugation reaction. This device was also tested with cancer cells for detection of enhanced levels of glutathione in them. Presence of glutathione is reflected on the transfer characteristics of the device. Detection was performed at various concentrations of GSH and a sensitivity and LOD (Limit of Detection) of 60.22 $mu$ A/dec change in concentration and 13.1 nM were obtained respectively. Subsequently, the device was tested with HeLa and MCF 7 cancer cells and the results were compared with that of Human Embryonic Kidney (HEK) cells, which are noncancerous. Device characteristics marked presence of higher concentration of GSH on cancer cells compared to that of normal cells. The values of sensitivity and LOD for this experiment were found to be 206.7 nA/cell and 38 cells respectively.
本文描述了一种结合ZnO纳米颗粒-谷胱甘肽- s -转移酶(GST)蛋白偶联物通道层的场效应晶体管(FET)生物传感器的制备和表征，用于谷胱甘肽的检测。据报道，谷胱甘肽是某些类型癌症的重要生物标志物。合成了ZnO纳米粒子与GST的纳米复合材料，作为标准紫外光刻技术制备FET结构的通道材料。该通道材料特异性检测谷胱甘肽与1-氯-2,4-二硝基苯(CDNB)之间的偶联反应，该反应仅在GST存在下发生。由于GST固定在通道上，因此可以通过偶联反应的发生来检测谷胱甘肽的存在。该装置还被用于检测癌细胞中谷胱甘肽水平的提高。谷胱甘肽的存在反映在装置的转移特性上。对不同浓度的谷胱甘肽进行检测，灵敏度为60.22 $mu$ a /dec，检出限为13.1 nM。随后，该装置与HeLa和mcf7癌细胞进行了测试，并将结果与非癌性人胚胎肾(HEK)细胞的结果进行了比较。与正常细胞相比，癌细胞上的谷胱甘肽浓度更高。本实验的灵敏度为206.7 nA/ cells, LOD为38 cells。
{"title":"Fabrication of FET Biosensor for Detection of Glutathione","authors":"U. Barman, N. Goswami, S. Ghosh, R. Paily","doi":"10.1109/icee44586.2018.8937892","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937892","url":null,"abstract":"This work describes fabrication and characterization of Field Effect Transistor (FET) biosensor incorporated with ZnO nanoparticle - Glutathione-S-Transferase (GST) protein conjugate based channel layer for detection of glutathione. Glutathione has been reported to be an important biomarker for certain types of cancer. Nanocomposite of ZnO nanoparticles and GST was synthesized to be used as the channel material for the FET structure fabricated using standard UV lithography technique. The channel material specifically detects the conjugation reaction between glutathione and 1-chloro-2,4-dinitrobenzene (CDNB) which takes place only in presence of GST. As GST in immobilized on the channel itself, presence of glutathione can be detected by dint of occurrence of the conjugation reaction. This device was also tested with cancer cells for detection of enhanced levels of glutathione in them. Presence of glutathione is reflected on the transfer characteristics of the device. Detection was performed at various concentrations of GSH and a sensitivity and LOD (Limit of Detection) of 60.22 $mu$ A/dec change in concentration and 13.1 nM were obtained respectively. Subsequently, the device was tested with HeLa and MCF 7 cancer cells and the results were compared with that of Human Embryonic Kidney (HEK) cells, which are noncancerous. Device characteristics marked presence of higher concentration of GSH on cancer cells compared to that of normal cells. The values of sensitivity and LOD for this experiment were found to be 206.7 nA/cell and 38 cells respectively.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"73 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86831825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8938001
Souvik Ghosh, Ambarish Ghosh
Magnetically driven mobile plasmonic nanotweezers [1] are potential candidates for various device applications pertaining to optical manipulation which are otherwise difficult to achieve using existing techniques. When illuminated, plasmonic nanoantennas generate enhanced localized electric field which imparts mechanical gradient force to trap sub-wavelength sized objects. In addition to the trapping force, there are also other effects present in a plasmonic system due to efficient absorption of electromagnetic energy. In this paper, we have theoretically investigated intrinsic plasmonic heating and resulting fluid convection for mobile nanotweezers. The temperature rise and fluid flow are calculated as a function of incident light intensity and position of the nanotweezer inside the chamber where we have assumed the geometries and experimental conditions given in reference [1]. In addition, we have investigated the possible role of fluid confinement in convective flows generated by the nanotweezer. The detailed thermal and hydrodynamic study brings an insight to different parameters that can influence the trapping performance of mobile nanotweezers and their applicability for practical purposes.
{"title":"Photothermal effects in mobile nanotweezers","authors":"Souvik Ghosh, Ambarish Ghosh","doi":"10.1109/icee44586.2018.8938001","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8938001","url":null,"abstract":"Magnetically driven mobile plasmonic nanotweezers [1] are potential candidates for various device applications pertaining to optical manipulation which are otherwise difficult to achieve using existing techniques. When illuminated, plasmonic nanoantennas generate enhanced localized electric field which imparts mechanical gradient force to trap sub-wavelength sized objects. In addition to the trapping force, there are also other effects present in a plasmonic system due to efficient absorption of electromagnetic energy. In this paper, we have theoretically investigated intrinsic plasmonic heating and resulting fluid convection for mobile nanotweezers. The temperature rise and fluid flow are calculated as a function of incident light intensity and position of the nanotweezer inside the chamber where we have assumed the geometries and experimental conditions given in reference [1]. In addition, we have investigated the possible role of fluid confinement in convective flows generated by the nanotweezer. The detailed thermal and hydrodynamic study brings an insight to different parameters that can influence the trapping performance of mobile nanotweezers and their applicability for practical purposes.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"101 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80823664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937914
Md. Hasan Raza Ansari, A. Kranti
The work shows the significance of device architecture to enhance the Retention Time (RT) of Junctionless Capacitorless Dynamic Random Access Memory (1T-DRAM). The conduction and storage regions of the DRAM are segregated through an oxide. The top (n-type) region is utilized for conduction while back region (p-type) for charge storage. A potential well, required to store charges, is also achieved through a Metal-Oxide-Semiconductor (MOS) effect. A maximum RT of $sim 3.8mathrm{s}$ is achieved with gate length of 200 nm and is scaled down to 10 nm with RT of $sim 1$ ms at $85^{circ}mathrm{C}$. The significance of scaling down total length and thickness is examined. It is possible to scale the bias required to perform Write “1” operation (generation of holes) through Band-to-Band-Tunneling (BTBT) to 0.5 V for gate length of 25 nm with RT of $sim 220$ ms at $85^{circ}mathrm{C}$.
{"title":"Retention Enhancement through Architecture Optimization in Junctionless Capacitorless DRAM","authors":"Md. Hasan Raza Ansari, A. Kranti","doi":"10.1109/icee44586.2018.8937914","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937914","url":null,"abstract":"The work shows the significance of device architecture to enhance the Retention Time (RT) of Junctionless Capacitorless Dynamic Random Access Memory (1T-DRAM). The conduction and storage regions of the DRAM are segregated through an oxide. The top (n-type) region is utilized for conduction while back region (p-type) for charge storage. A potential well, required to store charges, is also achieved through a Metal-Oxide-Semiconductor (MOS) effect. A maximum RT of $sim 3.8mathrm{s}$ is achieved with gate length of 200 nm and is scaled down to 10 nm with RT of $sim 1$ ms at $85^{circ}mathrm{C}$. The significance of scaling down total length and thickness is examined. It is possible to scale the bias required to perform Write “1” operation (generation of holes) through Band-to-Band-Tunneling (BTBT) to 0.5 V for gate length of 25 nm with RT of $sim 220$ ms at $85^{circ}mathrm{C}$.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"78 10 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89543072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937957
S. T. Nibhanupudi, A. Rai, A. Roy, Sanjay K.Banerjee, J. Kulkarni
Phase transition Material (PTM) assisted logic and SRAM bitcells have been proposed with improved soft error tolerance. The large insulating resistance of PTM hinders the propagation of glitches to subsequent stages thereby improving the immunity to radiation strikes. Also, the abrupt switching to metallic phase minimizes the delay penalty thereby offering an optimized solution. We present a detailed PTM parameter optimization for optimum soft error performance. We also quantify the improvement in the Soft Error Tolerance of logic and 6T SRAM bit cell configuration.
{"title":"Memory and Logic soft error improvement using phase transition material assisted transistors","authors":"S. T. Nibhanupudi, A. Rai, A. Roy, Sanjay K.Banerjee, J. Kulkarni","doi":"10.1109/icee44586.2018.8937957","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937957","url":null,"abstract":"Phase transition Material (PTM) assisted logic and SRAM bitcells have been proposed with improved soft error tolerance. The large insulating resistance of PTM hinders the propagation of glitches to subsequent stages thereby improving the immunity to radiation strikes. Also, the abrupt switching to metallic phase minimizes the delay penalty thereby offering an optimized solution. We present a detailed PTM parameter optimization for optimum soft error performance. We also quantify the improvement in the Soft Error Tolerance of logic and 6T SRAM bit cell configuration.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"52 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73770421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937933
K. Deepa, Praveen C Ramamurthy
Cu2 ZnSnS4 (CZTS) nanoparticles are synthesized using hot injection method at different durations such as 3, 6, 9 and 12h. With increase in the duration to 6h, Cu3SnS4 phase appeared to be prominent together with CZTS phase. Fixing the deposition time at 3 h, the composition is varied to get a Cu poor sample Cu(Zn+Sn) ratio of 0.78 which is known to be in the optimum range for device fabricaton. These films showed tetragonal kesterite structure of CZTS with traces of wurtzite phase. Band gap varied from 1.55 to 1.3 eV and the nanoparticles have a size of ~8 nm. The optimized film had a resistivity of 15 $Omega$ cm and mobility of 8 cm2/Vs suitable for solar cells.
{"title":"Synthesis of Cu2 ZnSnSn4 nanoparticles for solar cell applications","authors":"K. Deepa, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8937933","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937933","url":null,"abstract":"Cu2 ZnSnS4 (CZTS) nanoparticles are synthesized using hot injection method at different durations such as 3, 6, 9 and 12h. With increase in the duration to 6h, Cu3SnS4 phase appeared to be prominent together with CZTS phase. Fixing the deposition time at 3 h, the composition is varied to get a Cu poor sample Cu(Zn+Sn) ratio of 0.78 which is known to be in the optimum range for device fabricaton. These films showed tetragonal kesterite structure of CZTS with traces of wurtzite phase. Band gap varied from 1.55 to 1.3 eV and the nanoparticles have a size of ~8 nm. The optimized film had a resistivity of 15 $Omega$ cm and mobility of 8 cm2/Vs suitable for solar cells.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"13 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85376197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8938014
Gourav Tarafdar, A. Kesavan, U. K. Pandey, Praveen C Ramamurthy
In this work two novel copolymers of Boron dipyrromethane (BODIPY) and Fluorene are designed, synthesized and their optoelectronics properties is reported. The polymers were designed to study the effect of the substituent at the meso position of BODIPY on the optoelectronic properties of the polymer. Changing the methyl group on the phenyl group at the meso position in the BODIPY subunit to trifluoromethyl group not only lowers the LUMO energy value but also improves the electron transport in the polymer. The polymers have also been used as electron transport material to fabricate all polymer solar cell and polymer photodetectors.
{"title":"Effect of meso substituent on Optoelectronic Properties in BODIPY based donor acceptor Copolymers","authors":"Gourav Tarafdar, A. Kesavan, U. K. Pandey, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8938014","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8938014","url":null,"abstract":"In this work two novel copolymers of Boron dipyrromethane (BODIPY) and Fluorene are designed, synthesized and their optoelectronics properties is reported. The polymers were designed to study the effect of the substituent at the meso position of BODIPY on the optoelectronic properties of the polymer. Changing the methyl group on the phenyl group at the meso position in the BODIPY subunit to trifluoromethyl group not only lowers the LUMO energy value but also improves the electron transport in the polymer. The polymers have also been used as electron transport material to fabricate all polymer solar cell and polymer photodetectors.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"60 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87127455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8938021
S. Saravanan, C. Athira, Praveen C Ramamurth
The present study evaluates the sensing behavior of lead ions in water by tin disulphide nanomaterial synthesized by hydrothermal method and tested with a three electrode electrochemical system using square wave anodic stripping voltammetry. The experimental parameters such as deposition potential and time, the pH of the medium were optimized to get good sensitivity and selectivity of the tin disulphide towards lead ions. The as synthesized SnS2 nanomaterial can able to detect the lead ions effectively (low limit of detection) in the nano molar concentration of lead ions in water and selectively, than do other ions using interference analysis.
{"title":"Tin disulphide based electrochemical sensor for lead ions detection in water","authors":"S. Saravanan, C. Athira, Praveen C Ramamurth","doi":"10.1109/icee44586.2018.8938021","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8938021","url":null,"abstract":"The present study evaluates the sensing behavior of lead ions in water by tin disulphide nanomaterial synthesized by hydrothermal method and tested with a three electrode electrochemical system using square wave anodic stripping voltammetry. The experimental parameters such as deposition potential and time, the pH of the medium were optimized to get good sensitivity and selectivity of the tin disulphide towards lead ions. The as synthesized SnS2 nanomaterial can able to detect the lead ions effectively (low limit of detection) in the nano molar concentration of lead ions in water and selectively, than do other ions using interference analysis.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87260274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937987
Kiran Dhope, S. Tallur
A sharp tip is essential for high resolution surface characterization images using atomic force microscope (AFM). We propose an analytical model for in-situ monitoring of AFM tip wear by tracking the resonance frequency of the cantilever tip that can be measured in a commercial AFM. The tip is modeled as a mass-loaded cantilever, and an expression for the resonance frequency shift with changing tip height is obtained analytically. The model agrees well with FEM simulations performed in COMSOL FEM and experimental measurements conducted with an Oxford Asylum MFP3D Origin AFM.
{"title":"Analytical model for monitoring of AFM tip wear through resonance frequency measurements","authors":"Kiran Dhope, S. Tallur","doi":"10.1109/icee44586.2018.8937987","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937987","url":null,"abstract":"A sharp tip is essential for high resolution surface characterization images using atomic force microscope (AFM). We propose an analytical model for in-situ monitoring of AFM tip wear by tracking the resonance frequency of the cantilever tip that can be measured in a commercial AFM. The tip is modeled as a mass-loaded cantilever, and an expression for the resonance frequency shift with changing tip height is obtained analytically. The model agrees well with FEM simulations performed in COMSOL FEM and experimental measurements conducted with an Oxford Asylum MFP3D Origin AFM.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"57 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84887648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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