Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937941
Vivek Raghuwanshi, Deepak Bharti, A. Mahato, Ishan Varun, S. P. Tiwari
We report the effect of varying the semiconductor:polymer blend ratio on the electrical performance and bias-stress stability of the organic field effect transistors (OFETs) with TIPS-Pentacene and polystyrene as semiconductor and polymer combination. Device performance was found to improve with increasing polymer content in the solution. Devices with 1:3 TIPS-Pentacene:polystyrene blend outperformed the other counterparts with high performance, and demonstrated least performance variation with regular 100 transfer measurement cycles. In addition, 1:3 blend devices have shown the least normalized drain current decay of $sim$ 8.5 % with the bias stress condition of VDS = VGS = -30 V for 2 h, as compared to the 1:1, 3:1 and neat devices with the decay of 15 %, 37 % and 71 % respectively. Additionally, a better recovery of electrical characteristics was observed in blend devices with larger polymer fractions from the deteriorating effects of gate bias stress.
{"title":"Effect of TIPS-Pentacene:Polystyrene Blend Ratio on Electrical Performance and Stability of Solution Processed Organic Field-Effect Transistors","authors":"Vivek Raghuwanshi, Deepak Bharti, A. Mahato, Ishan Varun, S. P. Tiwari","doi":"10.1109/icee44586.2018.8937941","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937941","url":null,"abstract":"We report the effect of varying the semiconductor:polymer blend ratio on the electrical performance and bias-stress stability of the organic field effect transistors (OFETs) with TIPS-Pentacene and polystyrene as semiconductor and polymer combination. Device performance was found to improve with increasing polymer content in the solution. Devices with 1:3 TIPS-Pentacene:polystyrene blend outperformed the other counterparts with high performance, and demonstrated least performance variation with regular 100 transfer measurement cycles. In addition, 1:3 blend devices have shown the least normalized drain current decay of $sim$ 8.5 % with the bias stress condition of VDS = VGS = -30 V for 2 h, as compared to the 1:1, 3:1 and neat devices with the decay of 15 %, 37 % and 71 % respectively. Additionally, a better recovery of electrical characteristics was observed in blend devices with larger polymer fractions from the deteriorating effects of gate bias stress.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"114 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76681010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937928
Ishan C. Ghosekar, G. C. Patil
The developments in the organic photovoltaics technology are mainly focused on increasing the power conversion efficiency (PCE), cost effective manufacturing and longer lifetime of the device. In this paper, effect of inserting the additional polymer layer between the hole transporting layer (HTL) and blended polymer: fullerene photoactive layer in conventional organic solar cell (OSC) has been demonstrated. The poly 3-hexylthiophene (P3HT) buffer layer inserted between HTL and P3HT:PCBM offers pure donor phase at the HTL interface which ultimately reduces the effect of vertical phase separation in conventional OSC. The experimental results shows that proposed buffered layer architecture has shown the improved power conversion efficiency (PCE) of OSC by $sim$35% over the conventional OSC structure. This improvement are mainly due to increase in photon absorption and improved charge collection at the HTL interface. In addition to this, the annealing dependent study on proposed buffered layer OSCs and conventional OSCs has been carried out. It has been found that annealing the active layer for longer duration has substantially reduced the PCE of the both the OSC architecture. The reason for this drop in PCE is mainly because of increase in donor-acceptor phase segregation and vertical phase separation in P3HT:PCBM. Although, in comparison to the conventional OSCs the PCE of proposed buffered layer OSCs has not plunges drastically which indicates the reduced impact of vertical phase separation in case of novel buffer layer architecture.
{"title":"Optimizing device efficiency of P3HT/P3HT:PCBM interlayer organic solar cell: Annealing dependent study","authors":"Ishan C. Ghosekar, G. C. Patil","doi":"10.1109/icee44586.2018.8937928","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937928","url":null,"abstract":"The developments in the organic photovoltaics technology are mainly focused on increasing the power conversion efficiency (PCE), cost effective manufacturing and longer lifetime of the device. In this paper, effect of inserting the additional polymer layer between the hole transporting layer (HTL) and blended polymer: fullerene photoactive layer in conventional organic solar cell (OSC) has been demonstrated. The poly 3-hexylthiophene (P3HT) buffer layer inserted between HTL and P3HT:PCBM offers pure donor phase at the HTL interface which ultimately reduces the effect of vertical phase separation in conventional OSC. The experimental results shows that proposed buffered layer architecture has shown the improved power conversion efficiency (PCE) of OSC by $sim$35% over the conventional OSC structure. This improvement are mainly due to increase in photon absorption and improved charge collection at the HTL interface. In addition to this, the annealing dependent study on proposed buffered layer OSCs and conventional OSCs has been carried out. It has been found that annealing the active layer for longer duration has substantially reduced the PCE of the both the OSC architecture. The reason for this drop in PCE is mainly because of increase in donor-acceptor phase segregation and vertical phase separation in P3HT:PCBM. Although, in comparison to the conventional OSCs the PCE of proposed buffered layer OSCs has not plunges drastically which indicates the reduced impact of vertical phase separation in case of novel buffer layer architecture.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"92 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76370287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937997
A. Debnath, Sreenidhi Turuvekre, N. Dasgupta, A. DasGupta
The gate leakage mechanism in AlGaN/GaN high electron mobility transistors (HEMT) is studied analytically using a charge-based model over a wide range of bias and temperature. Three distinct current mechanisms, Poole-Frenkel (PF), Defect assisted tunneling (DAT) and Thermionic emission (TE) are modeled. PF is the significant mechanism in reverse bias, while TE and DAT are the two dominant mechanisms in forward and low reverse bias respectively. This model is implemented in Verilog-A and rigorously validated with experimental data.
{"title":"Charge Based Compact Modeling of Gate Leakage Mechanism in AlGaN/GaN HEMTs","authors":"A. Debnath, Sreenidhi Turuvekre, N. Dasgupta, A. DasGupta","doi":"10.1109/icee44586.2018.8937997","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937997","url":null,"abstract":"The gate leakage mechanism in AlGaN/GaN high electron mobility transistors (HEMT) is studied analytically using a charge-based model over a wide range of bias and temperature. Three distinct current mechanisms, Poole-Frenkel (PF), Defect assisted tunneling (DAT) and Thermionic emission (TE) are modeled. PF is the significant mechanism in reverse bias, while TE and DAT are the two dominant mechanisms in forward and low reverse bias respectively. This model is implemented in Verilog-A and rigorously validated with experimental data.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"175 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75936046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937886
A. Kesavan, A. D. Rao, Praveen C Ramamurthy
Enhancing the light photons which are responsible for the generation of the exciton in the photoactive layer is one of the primary ways to increase the net power conversion efficiency of solar cell. Using plasmonic metal nanoparticle is one of the well-known method to improve the solar cell performance. In this work, poly-dispersed aluminium nanoparticles (AlNPs) were embedded at the PC61BM/Al interface to investigate the effect of it on solar cell performance. It is observed that device with AlNPs at the PC61BM/Al interface showed significant enhancement in optical absorption and as a result improved JSC. It is observed that Al nanoparticles at cathode interface aids in light trapping and also reduction in series resistance. These coupled effects of optical and electrical enhancement tend to improve power conversion efficiency in the device. From this study, it is noted that addition of AlNPs modifies deep trap state distribution in the active matrix. Further, this study shows that AlNPs incorporation with ETL improves the device power conversion efficiency (PCE) mainly through the optical enhancement.
{"title":"Polydispersed Metal Nanoparticles at the Interface for Improved Optoelectronic Properties in Perovskite Photovoltaics","authors":"A. Kesavan, A. D. Rao, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8937886","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937886","url":null,"abstract":"Enhancing the light photons which are responsible for the generation of the exciton in the photoactive layer is one of the primary ways to increase the net power conversion efficiency of solar cell. Using plasmonic metal nanoparticle is one of the well-known method to improve the solar cell performance. In this work, poly-dispersed aluminium nanoparticles (AlNPs) were embedded at the PC61BM/Al interface to investigate the effect of it on solar cell performance. It is observed that device with AlNPs at the PC61BM/Al interface showed significant enhancement in optical absorption and as a result improved JSC. It is observed that Al nanoparticles at cathode interface aids in light trapping and also reduction in series resistance. These coupled effects of optical and electrical enhancement tend to improve power conversion efficiency in the device. From this study, it is noted that addition of AlNPs modifies deep trap state distribution in the active matrix. Further, this study shows that AlNPs incorporation with ETL improves the device power conversion efficiency (PCE) mainly through the optical enhancement.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"33 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74541531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937914
Md. Hasan Raza Ansari, A. Kranti
The work shows the significance of device architecture to enhance the Retention Time (RT) of Junctionless Capacitorless Dynamic Random Access Memory (1T-DRAM). The conduction and storage regions of the DRAM are segregated through an oxide. The top (n-type) region is utilized for conduction while back region (p-type) for charge storage. A potential well, required to store charges, is also achieved through a Metal-Oxide-Semiconductor (MOS) effect. A maximum RT of $sim 3.8mathrm{s}$ is achieved with gate length of 200 nm and is scaled down to 10 nm with RT of $sim 1$ ms at $85^{circ}mathrm{C}$. The significance of scaling down total length and thickness is examined. It is possible to scale the bias required to perform Write “1” operation (generation of holes) through Band-to-Band-Tunneling (BTBT) to 0.5 V for gate length of 25 nm with RT of $sim 220$ ms at $85^{circ}mathrm{C}$.
{"title":"Retention Enhancement through Architecture Optimization in Junctionless Capacitorless DRAM","authors":"Md. Hasan Raza Ansari, A. Kranti","doi":"10.1109/icee44586.2018.8937914","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937914","url":null,"abstract":"The work shows the significance of device architecture to enhance the Retention Time (RT) of Junctionless Capacitorless Dynamic Random Access Memory (1T-DRAM). The conduction and storage regions of the DRAM are segregated through an oxide. The top (n-type) region is utilized for conduction while back region (p-type) for charge storage. A potential well, required to store charges, is also achieved through a Metal-Oxide-Semiconductor (MOS) effect. A maximum RT of $sim 3.8mathrm{s}$ is achieved with gate length of 200 nm and is scaled down to 10 nm with RT of $sim 1$ ms at $85^{circ}mathrm{C}$. The significance of scaling down total length and thickness is examined. It is possible to scale the bias required to perform Write “1” operation (generation of holes) through Band-to-Band-Tunneling (BTBT) to 0.5 V for gate length of 25 nm with RT of $sim 220$ ms at $85^{circ}mathrm{C}$.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"78 10 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89543072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937957
S. T. Nibhanupudi, A. Rai, A. Roy, Sanjay K.Banerjee, J. Kulkarni
Phase transition Material (PTM) assisted logic and SRAM bitcells have been proposed with improved soft error tolerance. The large insulating resistance of PTM hinders the propagation of glitches to subsequent stages thereby improving the immunity to radiation strikes. Also, the abrupt switching to metallic phase minimizes the delay penalty thereby offering an optimized solution. We present a detailed PTM parameter optimization for optimum soft error performance. We also quantify the improvement in the Soft Error Tolerance of logic and 6T SRAM bit cell configuration.
{"title":"Memory and Logic soft error improvement using phase transition material assisted transistors","authors":"S. T. Nibhanupudi, A. Rai, A. Roy, Sanjay K.Banerjee, J. Kulkarni","doi":"10.1109/icee44586.2018.8937957","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937957","url":null,"abstract":"Phase transition Material (PTM) assisted logic and SRAM bitcells have been proposed with improved soft error tolerance. The large insulating resistance of PTM hinders the propagation of glitches to subsequent stages thereby improving the immunity to radiation strikes. Also, the abrupt switching to metallic phase minimizes the delay penalty thereby offering an optimized solution. We present a detailed PTM parameter optimization for optimum soft error performance. We also quantify the improvement in the Soft Error Tolerance of logic and 6T SRAM bit cell configuration.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"52 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73770421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8938021
S. Saravanan, C. Athira, Praveen C Ramamurth
The present study evaluates the sensing behavior of lead ions in water by tin disulphide nanomaterial synthesized by hydrothermal method and tested with a three electrode electrochemical system using square wave anodic stripping voltammetry. The experimental parameters such as deposition potential and time, the pH of the medium were optimized to get good sensitivity and selectivity of the tin disulphide towards lead ions. The as synthesized SnS2 nanomaterial can able to detect the lead ions effectively (low limit of detection) in the nano molar concentration of lead ions in water and selectively, than do other ions using interference analysis.
{"title":"Tin disulphide based electrochemical sensor for lead ions detection in water","authors":"S. Saravanan, C. Athira, Praveen C Ramamurth","doi":"10.1109/icee44586.2018.8938021","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8938021","url":null,"abstract":"The present study evaluates the sensing behavior of lead ions in water by tin disulphide nanomaterial synthesized by hydrothermal method and tested with a three electrode electrochemical system using square wave anodic stripping voltammetry. The experimental parameters such as deposition potential and time, the pH of the medium were optimized to get good sensitivity and selectivity of the tin disulphide towards lead ions. The as synthesized SnS2 nanomaterial can able to detect the lead ions effectively (low limit of detection) in the nano molar concentration of lead ions in water and selectively, than do other ions using interference analysis.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87260274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937987
Kiran Dhope, S. Tallur
A sharp tip is essential for high resolution surface characterization images using atomic force microscope (AFM). We propose an analytical model for in-situ monitoring of AFM tip wear by tracking the resonance frequency of the cantilever tip that can be measured in a commercial AFM. The tip is modeled as a mass-loaded cantilever, and an expression for the resonance frequency shift with changing tip height is obtained analytically. The model agrees well with FEM simulations performed in COMSOL FEM and experimental measurements conducted with an Oxford Asylum MFP3D Origin AFM.
{"title":"Analytical model for monitoring of AFM tip wear through resonance frequency measurements","authors":"Kiran Dhope, S. Tallur","doi":"10.1109/icee44586.2018.8937987","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937987","url":null,"abstract":"A sharp tip is essential for high resolution surface characterization images using atomic force microscope (AFM). We propose an analytical model for in-situ monitoring of AFM tip wear by tracking the resonance frequency of the cantilever tip that can be measured in a commercial AFM. The tip is modeled as a mass-loaded cantilever, and an expression for the resonance frequency shift with changing tip height is obtained analytically. The model agrees well with FEM simulations performed in COMSOL FEM and experimental measurements conducted with an Oxford Asylum MFP3D Origin AFM.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"57 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84887648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937933
K. Deepa, Praveen C Ramamurthy
Cu2 ZnSnS4 (CZTS) nanoparticles are synthesized using hot injection method at different durations such as 3, 6, 9 and 12h. With increase in the duration to 6h, Cu3SnS4 phase appeared to be prominent together with CZTS phase. Fixing the deposition time at 3 h, the composition is varied to get a Cu poor sample Cu(Zn+Sn) ratio of 0.78 which is known to be in the optimum range for device fabricaton. These films showed tetragonal kesterite structure of CZTS with traces of wurtzite phase. Band gap varied from 1.55 to 1.3 eV and the nanoparticles have a size of ~8 nm. The optimized film had a resistivity of 15 $Omega$ cm and mobility of 8 cm2/Vs suitable for solar cells.
{"title":"Synthesis of Cu2 ZnSnSn4 nanoparticles for solar cell applications","authors":"K. Deepa, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8937933","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937933","url":null,"abstract":"Cu2 ZnSnS4 (CZTS) nanoparticles are synthesized using hot injection method at different durations such as 3, 6, 9 and 12h. With increase in the duration to 6h, Cu3SnS4 phase appeared to be prominent together with CZTS phase. Fixing the deposition time at 3 h, the composition is varied to get a Cu poor sample Cu(Zn+Sn) ratio of 0.78 which is known to be in the optimum range for device fabricaton. These films showed tetragonal kesterite structure of CZTS with traces of wurtzite phase. Band gap varied from 1.55 to 1.3 eV and the nanoparticles have a size of ~8 nm. The optimized film had a resistivity of 15 $Omega$ cm and mobility of 8 cm2/Vs suitable for solar cells.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"13 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85376197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8938014
Gourav Tarafdar, A. Kesavan, U. K. Pandey, Praveen C Ramamurthy
In this work two novel copolymers of Boron dipyrromethane (BODIPY) and Fluorene are designed, synthesized and their optoelectronics properties is reported. The polymers were designed to study the effect of the substituent at the meso position of BODIPY on the optoelectronic properties of the polymer. Changing the methyl group on the phenyl group at the meso position in the BODIPY subunit to trifluoromethyl group not only lowers the LUMO energy value but also improves the electron transport in the polymer. The polymers have also been used as electron transport material to fabricate all polymer solar cell and polymer photodetectors.
{"title":"Effect of meso substituent on Optoelectronic Properties in BODIPY based donor acceptor Copolymers","authors":"Gourav Tarafdar, A. Kesavan, U. K. Pandey, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8938014","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8938014","url":null,"abstract":"In this work two novel copolymers of Boron dipyrromethane (BODIPY) and Fluorene are designed, synthesized and their optoelectronics properties is reported. The polymers were designed to study the effect of the substituent at the meso position of BODIPY on the optoelectronic properties of the polymer. Changing the methyl group on the phenyl group at the meso position in the BODIPY subunit to trifluoromethyl group not only lowers the LUMO energy value but also improves the electron transport in the polymer. The polymers have also been used as electron transport material to fabricate all polymer solar cell and polymer photodetectors.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"60 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87127455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：