Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8938002
Ananya Ghosh, Fidal V T, S. Sengupta, E. Bhattacharya
Suitability of using ultrathin silicon nanoporous membranes (SNMs), fabricated using batch processes, for use in dialysis is investigated. In the present work, the diffusion of urea and creatinine through the SNMs were studied using two reservoirs containing the retentate and the permeate solution. Stirring of the solutions in the reservoirs was found to accelerate the diffusion process. Surface treatments on the SNM were carried out to prevent bio-fouling. Silanization followed by acid treatment was found to be the most effective method for preventing binding of urea on the SNM surface. Constant cycling in the trans-reservoir, maintained the concentration gradient of the dialysate and the diffusion increased significantly. The SNM appears to be a promising candidate for dialysis.
{"title":"Functionalized Silicon Nanoporous Membranes for Efficient Dialysis","authors":"Ananya Ghosh, Fidal V T, S. Sengupta, E. Bhattacharya","doi":"10.1109/icee44586.2018.8938002","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8938002","url":null,"abstract":"Suitability of using ultrathin silicon nanoporous membranes (SNMs), fabricated using batch processes, for use in dialysis is investigated. In the present work, the diffusion of urea and creatinine through the SNMs were studied using two reservoirs containing the retentate and the permeate solution. Stirring of the solutions in the reservoirs was found to accelerate the diffusion process. Surface treatments on the SNM were carried out to prevent bio-fouling. Silanization followed by acid treatment was found to be the most effective method for preventing binding of urea on the SNM surface. Constant cycling in the trans-reservoir, maintained the concentration gradient of the dialysate and the diffusion increased significantly. The SNM appears to be a promising candidate for dialysis.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"22 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87255965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937927
Kartikey Thakar, Abin Varghese, Sushovan Dhara, Sayantani Ghosh, S. Lodha
In this report, we demonstrate photodetection and gas sensing using thin (scaled) effective oxide thickness (EOT) bottom gate molybdenum disulfide (MoS2) field-effect transistors (FETs). The thin EOT enables low voltage operation while the bottom gate architecture eliminates parasitic top gate optical absorption losses during photodetection and provides open top surface area for gas sensing. Electrical characterization of the MoS2 FETs shows an on-state mobility of 35 cm2/Vs for an operating voltage range of 1 V with excellent electrostatic control. The bottom gate MoS2 FETs were employed for photodetection and gas sensing with a low operating voltage range of 0.5 V. High responsivity of 2 A/W, and a photo-amplification ratio of 103 were obtained for 532 nm illumination. Sensitivity value of nearly 32% was obtained for N2 gas exposure.
{"title":"Thin EOT MoS2 FET for Efficient Photodetection and Gas Sensing","authors":"Kartikey Thakar, Abin Varghese, Sushovan Dhara, Sayantani Ghosh, S. Lodha","doi":"10.1109/icee44586.2018.8937927","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937927","url":null,"abstract":"In this report, we demonstrate photodetection and gas sensing using thin (scaled) effective oxide thickness (EOT) bottom gate molybdenum disulfide (MoS2) field-effect transistors (FETs). The thin EOT enables low voltage operation while the bottom gate architecture eliminates parasitic top gate optical absorption losses during photodetection and provides open top surface area for gas sensing. Electrical characterization of the MoS2 FETs shows an on-state mobility of 35 cm2/Vs for an operating voltage range of 1 V with excellent electrostatic control. The bottom gate MoS2 FETs were employed for photodetection and gas sensing with a low operating voltage range of 0.5 V. High responsivity of 2 A/W, and a photo-amplification ratio of 103 were obtained for 532 nm illumination. Sensitivity value of nearly 32% was obtained for N2 gas exposure.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"17 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90315244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937929
S. Saha, Krishna Yaddanapudi, K. Muraleedharan, S. Raghavan, D. Banerjee
Microstructure evolution of GaN grown on c-sapphire by MOCVD has been systematically studied using transmission electron microscopy based techniques. Individual samples have been derived by interrupting the GaN growth at various steps, starting from nitridation at 530° C, followed by the standard two step growth comprising of first deposition of low temperature GaN nucleation layer (LT-GaN NL) and then ramping up the temperature followed by high temperature GaN epilayer growth. Effect of nitridation, and the microstructure of the nitride layer for various nitridation temperatures has been recently reported by our group [1], where we have shown that the nitride layer formed at this nitridation temperature is cubic spinel AlxOyNz. In this paper it will be shown, that the LT-GaN grown on this AlxOyNz (after nitridation at 530° C) is primarily cubic zinc blende (zb) in structure, with multiple twin variants existing about various {111} planes. Its crystallographic orientation relationships with the underlying nitride layer and the sapphire substrate will be shown. The transformation of LT-GaN and the regions of transformation from cubic zb phase to the wurtzite (w) phase during the annealing step will be presented. Subsequent effects on the GaN epilayer growth due to the microstructural evolution of these underlying layers along with the evolution of defects will also be discussed.
{"title":"GaN Growth Process by MOCVD Revisited: TEM Study of Microstructural Evolution Presented","authors":"S. Saha, Krishna Yaddanapudi, K. Muraleedharan, S. Raghavan, D. Banerjee","doi":"10.1109/icee44586.2018.8937929","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937929","url":null,"abstract":"Microstructure evolution of GaN grown on c-sapphire by MOCVD has been systematically studied using transmission electron microscopy based techniques. Individual samples have been derived by interrupting the GaN growth at various steps, starting from nitridation at 530° C, followed by the standard two step growth comprising of first deposition of low temperature GaN nucleation layer (LT-GaN NL) and then ramping up the temperature followed by high temperature GaN epilayer growth. Effect of nitridation, and the microstructure of the nitride layer for various nitridation temperatures has been recently reported by our group [1], where we have shown that the nitride layer formed at this nitridation temperature is cubic spinel AlxOyNz. In this paper it will be shown, that the LT-GaN grown on this AlxOyNz (after nitridation at 530° C) is primarily cubic zinc blende (zb) in structure, with multiple twin variants existing about various {111} planes. Its crystallographic orientation relationships with the underlying nitride layer and the sapphire substrate will be shown. The transformation of LT-GaN and the regions of transformation from cubic zb phase to the wurtzite (w) phase during the annealing step will be presented. Subsequent effects on the GaN epilayer growth due to the microstructural evolution of these underlying layers along with the evolution of defects will also be discussed.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"26 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83152291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937904
R. Jain, S. Behera, K. Sreejith, A. Kottantharayil, P. Basu, A. Sharma
Mapping of diffusion length (L) in the bulk region and effective back surface recombination velocity (SRV) in AI-BSF and PERC Si solar cells has been carried out by utilizing the spectral response (SR) at desired wavelengths. Light beam induced current (LBIC) technique was used to generate the maps of SR and reflectivity (R) on cell area (6” x6”). MATLAB tool was used to convert the spatial maps of SR and R into L and SRV. We found that (i) the distribution of L in multi-crystalline cells varied from grain to grain in wide range (150-600 $mu$m) while in mono-crystalline cells, it varied in rather narrow range (450-600$mu$m); (ii) the values of SRV for PERC cells (120-250 cm/sec for mono-crystalline and 100-250 cm/sec for multi-crystalline) and AI-BSF cells (320-400 cm/sec for mono-crystalline and 250-350 cm/sec for multi-crystalline) differ by considerable magnitude due to passivation quality at back side. Three multi-crystalline AI-BSF Si solar cells of cell efficiencies 17.6%, 17.9% and 18.1% were investigated with the proposed methodology and demonstrated that the efficiency deficit is primarily due to defects present in bulk material and poor back surface passivation.
{"title":"Mapping of Bulk Diffusion Length and Effective Back Surface Recombination Velocity in Silicon Solar Cells","authors":"R. Jain, S. Behera, K. Sreejith, A. Kottantharayil, P. Basu, A. Sharma","doi":"10.1109/icee44586.2018.8937904","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937904","url":null,"abstract":"Mapping of diffusion length (L) in the bulk region and effective back surface recombination velocity (SRV) in AI-BSF and PERC Si solar cells has been carried out by utilizing the spectral response (SR) at desired wavelengths. Light beam induced current (LBIC) technique was used to generate the maps of SR and reflectivity (R) on cell area (6” x6”). MATLAB tool was used to convert the spatial maps of SR and R into L and SRV. We found that (i) the distribution of L in multi-crystalline cells varied from grain to grain in wide range (150-600 $mu$m) while in mono-crystalline cells, it varied in rather narrow range (450-600$mu$m); (ii) the values of SRV for PERC cells (120-250 cm/sec for mono-crystalline and 100-250 cm/sec for multi-crystalline) and AI-BSF cells (320-400 cm/sec for mono-crystalline and 250-350 cm/sec for multi-crystalline) differ by considerable magnitude due to passivation quality at back side. Three multi-crystalline AI-BSF Si solar cells of cell efficiencies 17.6%, 17.9% and 18.1% were investigated with the proposed methodology and demonstrated that the efficiency deficit is primarily due to defects present in bulk material and poor back surface passivation.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"45 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83844097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937993
Rahul Kumar, Neeraj Goel, R. Raliya, P. Biswas, Mahesh Kumar
We demonstrated an ultraviolet detector employing an in-plane transport channel of n-type MoS2 with out-of-plane p-type rGO, which acts as a sensitizer for underlying n-type MoS2 photodetector. A developed vertical built-in field from vertical p-n nano-heterojunction separates the photo-excited carriers at the rGO/MoS2 interface. Therefore, the rGO/MoS2 device showed a notably improved photo-responsivity of $sim$ 6.92 A)/W and an excellent detectivity of 1.26 $times$ 1012 Jones under the irradiation of ultraviolet light. Moreover, the device exhibited an excellent reproducibility and stability in ambient environment even after four months.
我们展示了一种采用面内传输通道的n型MoS2和面外p型rGO的紫外探测器，它作为底层n型MoS2光电探测器的敏化剂。垂直p-n纳米异质结形成垂直内嵌场，在rGO/MoS2界面上分离光激发载流子。因此，在紫外光照射下，rGO/MoS2器件的光响应率显著提高，达到6.92 a /W，探测率为1.26 × 1012 Jones。此外，即使在四个月后，该装置在环境环境中也表现出良好的再现性和稳定性。
{"title":"High-performance ultraviolet detector employing out-of-plane rGO/MoS2 PN heterostructure","authors":"Rahul Kumar, Neeraj Goel, R. Raliya, P. Biswas, Mahesh Kumar","doi":"10.1109/icee44586.2018.8937993","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937993","url":null,"abstract":"We demonstrated an ultraviolet detector employing an in-plane transport channel of n-type MoS2 with out-of-plane p-type rGO, which acts as a sensitizer for underlying n-type MoS2 photodetector. A developed vertical built-in field from vertical p-n nano-heterojunction separates the photo-excited carriers at the rGO/MoS2 interface. Therefore, the rGO/MoS2 device showed a notably improved photo-responsivity of $sim$ 6.92 A)/W and an excellent detectivity of 1.26 $times$ 1012 Jones under the irradiation of ultraviolet light. Moreover, the device exhibited an excellent reproducibility and stability in ambient environment even after four months.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"98 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83607944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/ICEE44586.2018.8937952
Mohit D. Ganeriwala, G. M. Sarath Chandran, N. Mohapatra
In this paper, we have proposed a simple, computationally efficient and physic-based compact model for III-V double gate field effect transistors (DGFETs) including gate insulator thickness asymmetry. The semiconductor charge and the gate capacitance are calculated using the recently proposed constant charge density approximation (CCDA). The CCDA approximation eliminates the need of knowing the exact wavefunction and thus provides an analytically simple way to model the DGFET electrostatics. The CCDA approximation assumes a constant charge centroid which is a limitation of this methodology. To address this issue, a physics-based charge centroid correction is also presented in this work. The proposed model (with charge centroid correction) is mathematically simple, scalable to any (a) (b) number of sub-bands and accurate for a wide range of gate voltages.
{"title":"A Simple Charge and Capacitance Compact Model for Asymmetric III-V DGFETs Using CCDA","authors":"Mohit D. Ganeriwala, G. M. Sarath Chandran, N. Mohapatra","doi":"10.1109/ICEE44586.2018.8937952","DOIUrl":"https://doi.org/10.1109/ICEE44586.2018.8937952","url":null,"abstract":"In this paper, we have proposed a simple, computationally efficient and physic-based compact model for III-V double gate field effect transistors (DGFETs) including gate insulator thickness asymmetry. The semiconductor charge and the gate capacitance are calculated using the recently proposed constant charge density approximation (CCDA). The CCDA approximation eliminates the need of knowing the exact wavefunction and thus provides an analytically simple way to model the DGFET electrostatics. The CCDA approximation assumes a constant charge centroid which is a limitation of this methodology. To address this issue, a physics-based charge centroid correction is also presented in this work. The proposed model (with charge centroid correction) is mathematically simple, scalable to any (a) (b) number of sub-bands and accurate for a wide range of gate voltages.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"16 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73239638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937971
H. J. Gogoi, Ankur Solanki, A. T. Mallajosyula
This paper presents a hybrid organic inorganic perovskite based memristive device having a structure that is commonly used for solar cells. Toluene is used as antisolvent during perovskite layer coating and its effect on the memristive device performance is studied in this report. It has been found that the antisolvent improves the morphology of the perovskite film. With this method, we obtained non-reversible resistive switching in the device with an on/off ratio of 104. This device also shows a reversible resistance switching with a set voltage of 0.5 V and a reset voltage of -0.9 V, measured at a sweep rate of 1 mV/s. The fabricated memory device shows promising performance and could be used as a non-volatile memory device for low power consuming applications.
{"title":"Effect of Antisolvent Method on the Performance of HOIP based Memristive Devices","authors":"H. J. Gogoi, Ankur Solanki, A. T. Mallajosyula","doi":"10.1109/icee44586.2018.8937971","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937971","url":null,"abstract":"This paper presents a hybrid organic inorganic perovskite based memristive device having a structure that is commonly used for solar cells. Toluene is used as antisolvent during perovskite layer coating and its effect on the memristive device performance is studied in this report. It has been found that the antisolvent improves the morphology of the perovskite film. With this method, we obtained non-reversible resistive switching in the device with an on/off ratio of 104. This device also shows a reversible resistance switching with a set voltage of 0.5 V and a reset voltage of -0.9 V, measured at a sweep rate of 1 mV/s. The fabricated memory device shows promising performance and could be used as a non-volatile memory device for low power consuming applications.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"27 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81536072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937850
U. Sahu, Kushaagra Goyal, Utkarsh Saxena, T. Chavan, U. Ganguly, D. Bhowmik
Hardware implementation of Artificial Neural Network (ANN) algorithms, which are being currently used widely by the data sciences community, provides advantages of memory-computing intertwining, high speed and low energy dissipation which software implementation of the same does not have. In this paper, we simulate a spintronic hardware implementation of a third generation neural network - Spike Time Dependent Plasticity (STDP) learning enabled Spiking Neural Network (SNN), which is closer to functioning of the brain than most other ANN-s. Spin orbit torque driven skyrmionic device, driven by a transistor based circuit to enable STDP, is used as a synapse here. We use a combination of micromagnetic simulations, transistor circuit simulations and implementation of SNN algorithm in a numerical package to simulate our skyrmionic SNN. We train the skyrmionic SNN on different datasets under a supervised learning scheme and calculate the energy dissipated in updating the weights of the synapses in order to train the network.
{"title":"Skyrmionic implementation of Spike Time Dependent Plasticity (STDP) enabled Spiking Neural Network (SNN) under supervised learning scheme","authors":"U. Sahu, Kushaagra Goyal, Utkarsh Saxena, T. Chavan, U. Ganguly, D. Bhowmik","doi":"10.1109/icee44586.2018.8937850","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937850","url":null,"abstract":"Hardware implementation of Artificial Neural Network (ANN) algorithms, which are being currently used widely by the data sciences community, provides advantages of memory-computing intertwining, high speed and low energy dissipation which software implementation of the same does not have. In this paper, we simulate a spintronic hardware implementation of a third generation neural network - Spike Time Dependent Plasticity (STDP) learning enabled Spiking Neural Network (SNN), which is closer to functioning of the brain than most other ANN-s. Spin orbit torque driven skyrmionic device, driven by a transistor based circuit to enable STDP, is used as a synapse here. We use a combination of micromagnetic simulations, transistor circuit simulations and implementation of SNN algorithm in a numerical package to simulate our skyrmionic SNN. We train the skyrmionic SNN on different datasets under a supervised learning scheme and calculate the energy dissipated in updating the weights of the synapses in order to train the network.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"80 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78393277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937999
K. Qureshi, G. Pahwa, Y. Chauhan
We present an explicable study of the impact of variability in the remnant polarization (Pr) of the polycrystalline ferroelectric layer of a double gate (DG) NCFET. We analyze the impact of intergranular linear variance in Pr considering (i) source end as reference point and (ii) drain end as reference point with the percentage value advancing to the other end. The study evaluates the device performance at various ferroelectric thicknesses for both long as well as short gate lengths. The electrical characteristics exhibit different behaviour for low and high values of applied drain bias. While for low drain voltage, intuitive results are obtained, high drain voltage characteristics follow a distinct trend of subthreshold swing (SS) decreasing from its initially deteriorated value, as the magnitude of Pr variance decreases from source to drain, whereas the tendency is reversed moving from drain to source. Based on the results, we further conclude that in order to prevent the hysteric effects, the granular variation between the first and the last grain should not exceed 25% for long channel and 20% for short channel devices.
{"title":"Impact of Linear Intergranular Variation in Remnant Polarization on Negative Capacitance Field Effect Transistor","authors":"K. Qureshi, G. Pahwa, Y. Chauhan","doi":"10.1109/icee44586.2018.8937999","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937999","url":null,"abstract":"We present an explicable study of the impact of variability in the remnant polarization (Pr) of the polycrystalline ferroelectric layer of a double gate (DG) NCFET. We analyze the impact of intergranular linear variance in Pr considering (i) source end as reference point and (ii) drain end as reference point with the percentage value advancing to the other end. The study evaluates the device performance at various ferroelectric thicknesses for both long as well as short gate lengths. The electrical characteristics exhibit different behaviour for low and high values of applied drain bias. While for low drain voltage, intuitive results are obtained, high drain voltage characteristics follow a distinct trend of subthreshold swing (SS) decreasing from its initially deteriorated value, as the magnitude of Pr variance decreases from source to drain, whereas the tendency is reversed moving from drain to source. Based on the results, we further conclude that in order to prevent the hysteric effects, the granular variation between the first and the last grain should not exceed 25% for long channel and 20% for short channel devices.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"61 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73893084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937908
S. Saravanan, Akshay Km, S. Kn, Praveen C Ramamurthy
In the present study, the inclusion of ionic moieties in the poly(vinyl butyral) matrix was accomplished by co-polymerizing butyraldehyde with poly(vinyl alcohol) and carboxy benzaldehyde in aqueous acidic medium. FT-IR and NMR spectroscopy results confirms the formation of acetal and butyral linkage in the polymer. Mechanical studies (both static and dynamic) of these ionomeric films show flexibility with ionic linkages up to 15 mol % acid neutralized with sodium and zinc ions. Zinc ionomers exhibit enhanced mechanical properties compared to sodium neutralized samples, because of its ionic size and ion-pair association within the multiplets. The moisture permeability studies accessed through calcium degradation test show the films with 15 mol % exhibit enhanced impermeability than other sodium ion neutralized films. The same trend was also observed for organic solar cells that are encapsulated with these films after exposure to external environment for 400 h. The water interaction with ionomer films was also evaluated at various temperatures and the results were presented based on the ionpair clustering and the steric hindrances in due of phenyl ring attachment to the base PVB matrix.
{"title":"The role of Na+, Zn2+ cations on the mechanical, thermal and moisture permeation behaviors of poly(vinyl butyral) based ionomeric films","authors":"S. Saravanan, Akshay Km, S. Kn, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8937908","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937908","url":null,"abstract":"In the present study, the inclusion of ionic moieties in the poly(vinyl butyral) matrix was accomplished by co-polymerizing butyraldehyde with poly(vinyl alcohol) and carboxy benzaldehyde in aqueous acidic medium. FT-IR and NMR spectroscopy results confirms the formation of acetal and butyral linkage in the polymer. Mechanical studies (both static and dynamic) of these ionomeric films show flexibility with ionic linkages up to 15 mol % acid neutralized with sodium and zinc ions. Zinc ionomers exhibit enhanced mechanical properties compared to sodium neutralized samples, because of its ionic size and ion-pair association within the multiplets. The moisture permeability studies accessed through calcium degradation test show the films with 15 mol % exhibit enhanced impermeability than other sodium ion neutralized films. The same trend was also observed for organic solar cells that are encapsulated with these films after exposure to external environment for 400 h. The water interaction with ionomer films was also evaluated at various temperatures and the results were presented based on the ionpair clustering and the steric hindrances in due of phenyl ring attachment to the base PVB matrix.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"114 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79216020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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