Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8938024
A. D. Rao, S. S, V. Adiga, S. Garner, U. K. Pandey, Sanchita Sengupta, Praveen C Ramamurthy
Perovskite based photovoltaic (PV) devices have gained enormous importance due to their high power conversion efficiencies and ease of fabrication (solution processing). Conventionally, flexible solar cells have been reported on substrates like PET and PEN. Corning® Willow® Glass, owing to its superior processability and oxygen and moisture barrier property, is a potential replacement for these substrates. In this work, devices fabricated on Willow Glass substrates have been subjected to bending and fatigue tests to assess their worthiness as substrates for flexible solar cells.
{"title":"Flexural and bending fatigue studies of perovskite solar cells on Willow Glass substrates","authors":"A. D. Rao, S. S, V. Adiga, S. Garner, U. K. Pandey, Sanchita Sengupta, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8938024","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8938024","url":null,"abstract":"Perovskite based photovoltaic (PV) devices have gained enormous importance due to their high power conversion efficiencies and ease of fabrication (solution processing). Conventionally, flexible solar cells have been reported on substrates like PET and PEN. Corning® Willow® Glass, owing to its superior processability and oxygen and moisture barrier property, is a potential replacement for these substrates. In this work, devices fabricated on Willow Glass substrates have been subjected to bending and fatigue tests to assess their worthiness as substrates for flexible solar cells.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"31 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76121260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937946
K. Khanum, Shweta Shekar, Praveen C Ramamurthy
The effect of morphology and the ability to maneuver the morphology to improve the conductivity of a polymer blend is the aim of this study. An electrospinning method has been used to maneuver the morphology and to obtain unique millipede-like structures of poly (ethylene oxide) PEO and poly (thiophene-benzothiadiazole-thiophene) [poly (Th-BT-Th)] blended in the ratios of 1:1, 1:2 and 2:1. The blend is electrospun at varying applied voltage and collector distance. The morphology of these structures was optimized and controlled to obtain aligned fibers with Poly (Th-BT-Th) crystallites arranged perpendicular to the PEO nanofibers. Furthermore, morphological, structural, electrical properties and application in electronic devices is evaluated. Thus, an approach to impart flexibility and enhance surface area for volatile-organic-compound sensors has been presented.
{"title":"Controlling the Morphology and Conductivity of Thiophene Nanofibers using Electrospinning for Flexible devices","authors":"K. Khanum, Shweta Shekar, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8937946","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937946","url":null,"abstract":"The effect of morphology and the ability to maneuver the morphology to improve the conductivity of a polymer blend is the aim of this study. An electrospinning method has been used to maneuver the morphology and to obtain unique millipede-like structures of poly (ethylene oxide) PEO and poly (thiophene-benzothiadiazole-thiophene) [poly (Th-BT-Th)] blended in the ratios of 1:1, 1:2 and 2:1. The blend is electrospun at varying applied voltage and collector distance. The morphology of these structures was optimized and controlled to obtain aligned fibers with Poly (Th-BT-Th) crystallites arranged perpendicular to the PEO nanofibers. Furthermore, morphological, structural, electrical properties and application in electronic devices is evaluated. Thus, an approach to impart flexibility and enhance surface area for volatile-organic-compound sensors has been presented.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"97 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90406602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937970
Vishal Choudhury, Santosh Aparanji, Roopa Prkash, Balaswamy Velpula, V. Supradeepa
We report a surprising observation of visible light flashes in the fusion splice point between the seed stage to the power amplifier in a 500 W narrow-linewidth, polarisation-maintaining Ytterbium-doped fiber laser. The flashes were observed to have a strong correlation with the backward pulses generated due to the onset of Stimulated Brillouin Scattering (SBS) in the laser. We believe these visible flashes appear as a result of second harmonic generation of higher order Raman Stokes components of the 1064nm laser signal. The Raman components are generated by the back-propagating, high peak power SBS pulses at threshold. The Raman Stokes in the core of the fiber generates their respective second harmonic counterparts in the cladding through a Cherenkov-type phase matching process.
{"title":"Observation of visible light flashes in high power near infrared narrow linewidth polarization maintained fiber laser caused by Stimulated Brillouin Scattering triggered cascaded Raman Scattering","authors":"Vishal Choudhury, Santosh Aparanji, Roopa Prkash, Balaswamy Velpula, V. Supradeepa","doi":"10.1109/icee44586.2018.8937970","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937970","url":null,"abstract":"We report a surprising observation of visible light flashes in the fusion splice point between the seed stage to the power amplifier in a 500 W narrow-linewidth, polarisation-maintaining Ytterbium-doped fiber laser. The flashes were observed to have a strong correlation with the backward pulses generated due to the onset of Stimulated Brillouin Scattering (SBS) in the laser. We believe these visible flashes appear as a result of second harmonic generation of higher order Raman Stokes components of the 1064nm laser signal. The Raman components are generated by the back-propagating, high peak power SBS pulses at threshold. The Raman Stokes in the core of the fiber generates their respective second harmonic counterparts in the cladding through a Cherenkov-type phase matching process.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"34 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85137278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937873
S. Shreya, B. Kaushik
Magnetic tunnel junction (MTJ) is the basic storage component of magnetic random access memory (MRAM). In recent years, many structures such as in-plane MTJ, perpendicular magnetic anisotropy MTJ (pMTJ), spin transfer torque MTJ (STT-MTJ), spin-orbit torque MTJ (SOTMTJ), and complementary MTJ (cMTJ) are reported. Different structures and behavior are subject to the choice of anisotropy, switching mechanism and/or geometry of MTJ. This paper presents a compact modeling of differential spin-orbit torque (DSOT) based MRAM. Two structures serial DSOT and parallel DSOT are presented. Compact modeling using VerilogA is presented and device performance is reported. The results show an improvement in write energy and delay by 50% and 3.2 times respectively as compared to the single ended SOT device. In addition, it illustrates that serial DSOT structure is more energy efficient than parallel DSOT. The SPICE-based DSOT model can be useful for many high-performance hybrid spintronics/CMOS applications.
{"title":"Compact Modeling of Differential Spin-Orbit Torque based MRAM","authors":"S. Shreya, B. Kaushik","doi":"10.1109/icee44586.2018.8937873","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937873","url":null,"abstract":"Magnetic tunnel junction (MTJ) is the basic storage component of magnetic random access memory (MRAM). In recent years, many structures such as in-plane MTJ, perpendicular magnetic anisotropy MTJ (pMTJ), spin transfer torque MTJ (STT-MTJ), spin-orbit torque MTJ (SOTMTJ), and complementary MTJ (cMTJ) are reported. Different structures and behavior are subject to the choice of anisotropy, switching mechanism and/or geometry of MTJ. This paper presents a compact modeling of differential spin-orbit torque (DSOT) based MRAM. Two structures serial DSOT and parallel DSOT are presented. Compact modeling using VerilogA is presented and device performance is reported. The results show an improvement in write energy and delay by 50% and 3.2 times respectively as compared to the single ended SOT device. In addition, it illustrates that serial DSOT structure is more energy efficient than parallel DSOT. The SPICE-based DSOT model can be useful for many high-performance hybrid spintronics/CMOS applications.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"52 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90749219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937894
R. Haldar, Arkadev Roy, S. Varshney
Continuous-wave pumped micro-optical resonators have been vastly exploited to produce frequency comb (FC) utilizing Kerr effect. Most of the materials used to build photonic platforms exhibit nonlinear losses such as, multi-photon absorption, free-carrier absorption and free-carrier dispersion which can strongly affect the nonlinear characteristics of the devices viz. micro-resonators. In this work, we have developed analytical formulation to make quick estimation of the steady-state behavior, optical bistability, and self-pulsation phenomena in presence of nonlinear losses. Higher-order $(gt 3)$ characteristic polynomial of intra-cavity power describing the steady-state homogeneous solution of the modified Lugiato Lefever Equation are discussed in detail. We derive the generalized analytical expressions for the threshold of normalized pump detuning to initiate the optical bistability, a necessary condition for the FC generation.
{"title":"Bistability and Self-Pulsation in Free-carrier Driven Optical Microcavities with All Nonlinear Losses","authors":"R. Haldar, Arkadev Roy, S. Varshney","doi":"10.1109/icee44586.2018.8937894","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937894","url":null,"abstract":"Continuous-wave pumped micro-optical resonators have been vastly exploited to produce frequency comb (FC) utilizing Kerr effect. Most of the materials used to build photonic platforms exhibit nonlinear losses such as, multi-photon absorption, free-carrier absorption and free-carrier dispersion which can strongly affect the nonlinear characteristics of the devices viz. micro-resonators. In this work, we have developed analytical formulation to make quick estimation of the steady-state behavior, optical bistability, and self-pulsation phenomena in presence of nonlinear losses. Higher-order $(gt 3)$ characteristic polynomial of intra-cavity power describing the steady-state homogeneous solution of the modified Lugiato Lefever Equation are discussed in detail. We derive the generalized analytical expressions for the threshold of normalized pump detuning to initiate the optical bistability, a necessary condition for the FC generation.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"36 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85644290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937897
P. Raja, N. Dasgupta, A. DasGupta
Numerical device simulation studies of self-heating, buffer and barrier layer trapping effects on drain current characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) are carried out under static and dynamic operation modes. In simulation model, a buffer layer trap at $mathrm{E}_{C} -0.5$ eV, a barrier layer trap at $mathrm{E}_{C} -0.45$ eV, and self-heating effects are considered. The simulation results are validated with the measured data. The changes in the $mathrm{I}_{D}-mathrm{V}_{D}$ and $mathrm{I}_{D}-mathrm{V}_{G}$ characteristics at different trap concentrations $(10^{16}-10^{18}$ cm$^{-3})$ are predicted. The drain-lag turn-on transient simulations are performed to study the dynamic performance of the HEMTs. The self-heating effect on the drain current transient response is analyzed. To estimate the time constant of the trapping phenomena, transient characteristics are simulated by excluding self-heating effects. Similarly, the effect of trap density $(10^{16}-10^{18}$ cm$^{-3})$ on the transient response is reported and also transient characteristics are obtained at different trap energies $(mathrm{E}_{C} -0.1$ eV to $mathrm{E}_{C} -1.0$ eV). Simulation results reveal that the drop in the drain current under transient is mainly caused due to the channel temperature rise, whereas the magnitude of the transient current is affected by the buffer trap concentration.
{"title":"Simulation of Self-Heating and Bulk Trapping Effects on Drain Current Static and Transient Characteristics of AlGaN/GaN HEMTs","authors":"P. Raja, N. Dasgupta, A. DasGupta","doi":"10.1109/icee44586.2018.8937897","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937897","url":null,"abstract":"Numerical device simulation studies of self-heating, buffer and barrier layer trapping effects on drain current characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) are carried out under static and dynamic operation modes. In simulation model, a buffer layer trap at $mathrm{E}_{C} -0.5$ eV, a barrier layer trap at $mathrm{E}_{C} -0.45$ eV, and self-heating effects are considered. The simulation results are validated with the measured data. The changes in the $mathrm{I}_{D}-mathrm{V}_{D}$ and $mathrm{I}_{D}-mathrm{V}_{G}$ characteristics at different trap concentrations $(10^{16}-10^{18}$ cm$^{-3})$ are predicted. The drain-lag turn-on transient simulations are performed to study the dynamic performance of the HEMTs. The self-heating effect on the drain current transient response is analyzed. To estimate the time constant of the trapping phenomena, transient characteristics are simulated by excluding self-heating effects. Similarly, the effect of trap density $(10^{16}-10^{18}$ cm$^{-3})$ on the transient response is reported and also transient characteristics are obtained at different trap energies $(mathrm{E}_{C} -0.1$ eV to $mathrm{E}_{C} -1.0$ eV). Simulation results reveal that the drop in the drain current under transient is mainly caused due to the channel temperature rise, whereas the magnitude of the transient current is affected by the buffer trap concentration.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"16 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84368830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8938017
K. De, Gourab Dutta
The gate-lag phenomenon in AlGaN/GaN High Electron Mobility Transistors (HEMTs) is analyzed using two-dimensional TCAD simulation. Drain current (ID) transient method is used to analyze the consequence of gate lag. Effect of donor states present at AlGaN surface and acceptor type traps in bulk GaN is investigated in detail. It was found that the contributions of both donor and acceptor type traps should be taken into consideration for obtaining the simulated ID transient similar to the experimental results. Effects of energy level and concentration of traps, and applied OFF-state bias stresses on the gate lag phenomenon in AlGaN/GaN HEMTs are also investigated. This paper also provides a detailed explanation of gate lag transient characteristics for over 10 decades of time.
{"title":"Investigation of Trap Induced Gate Lag Phenomenon in AlGaN/GaN High Electron Mobility Transistors","authors":"K. De, Gourab Dutta","doi":"10.1109/icee44586.2018.8938017","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8938017","url":null,"abstract":"The gate-lag phenomenon in AlGaN/GaN High Electron Mobility Transistors (HEMTs) is analyzed using two-dimensional TCAD simulation. Drain current (ID) transient method is used to analyze the consequence of gate lag. Effect of donor states present at AlGaN surface and acceptor type traps in bulk GaN is investigated in detail. It was found that the contributions of both donor and acceptor type traps should be taken into consideration for obtaining the simulated ID transient similar to the experimental results. Effects of energy level and concentration of traps, and applied OFF-state bias stresses on the gate lag phenomenon in AlGaN/GaN HEMTs are also investigated. This paper also provides a detailed explanation of gate lag transient characteristics for over 10 decades of time.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90902949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937865
S. Ramakrishnan, D.Vinod Kumar, H. Nagarajaiah, S. Saravanan, Praveen C Ramamurthy
Benzimidazole based derivate [2-(4,7-di(thiophen-2-yl)-1H-benzo[d]imidazol-2-yl)-6-hydroxymethyl)-4-methylphenol (BI) modified reduced graphene oxide (BI-RGO) was prepared by simple non-covalent functionalization. Analytical spectroscopy by (Fourier transform infrared, UV-Visible and Raman) revealed the modification has occurred by RGO with BI through $pi$–$pi$ interaction. The Photoluminescence spectrum shows that BIRGO has 18% quenching compared to neat BI derivatives. UV-Visible and PL Spectrum reveals the electronic and optical properties of the BI and the changes that occurs after functionalization. Raman and FTIR spectrum of the compounds also revealed the presence of different functional groups and structural configuration. RGO and RGO-BI which provides all the details for further study regarding sensor applications.
{"title":"Benzimidazole/reduced graphene oxide based field effect transistor for mercury ion detection in water","authors":"S. Ramakrishnan, D.Vinod Kumar, H. Nagarajaiah, S. Saravanan, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8937865","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937865","url":null,"abstract":"Benzimidazole based derivate [2-(4,7-di(thiophen-2-yl)-1H-benzo[d]imidazol-2-yl)-6-hydroxymethyl)-4-methylphenol (BI) modified reduced graphene oxide (BI-RGO) was prepared by simple non-covalent functionalization. Analytical spectroscopy by (Fourier transform infrared, UV-Visible and Raman) revealed the modification has occurred by RGO with BI through $pi$–$pi$ interaction. The Photoluminescence spectrum shows that BIRGO has 18% quenching compared to neat BI derivatives. UV-Visible and PL Spectrum reveals the electronic and optical properties of the BI and the changes that occurs after functionalization. Raman and FTIR spectrum of the compounds also revealed the presence of different functional groups and structural configuration. RGO and RGO-BI which provides all the details for further study regarding sensor applications.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"49 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80628686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937940
V. Mere, S. Selvaraja
We demonstrate a fixed electron beam (e-beam) moving stage patterned photonics integrated circuit on Silicon-on-insulator platform. The circuit demonstrator consists of power splitter/combiner, wire-to-slot couplers, bend waveguide, and wire waveguides. We present a slot Mach-Zehnder interferometer (MZI) in 1550 nm band with efficient slot mode excitation. We verify slot mode excitation using numerical calculation.
{"title":"Silicon Slot Waveguide Mach-Zehnder Using Fixed Electron Beam Moving Stage Patterning Technique","authors":"V. Mere, S. Selvaraja","doi":"10.1109/icee44586.2018.8937940","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937940","url":null,"abstract":"We demonstrate a fixed electron beam (e-beam) moving stage patterned photonics integrated circuit on Silicon-on-insulator platform. The circuit demonstrator consists of power splitter/combiner, wire-to-slot couplers, bend waveguide, and wire waveguides. We present a slot Mach-Zehnder interferometer (MZI) in 1550 nm band with efficient slot mode excitation. We verify slot mode excitation using numerical calculation.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"82 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73902051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937983
Manoj Kumar, A. Bansal, K. Aditya, Charu Gupta, Anshul Gupta, A. Dixit
In this paper, a unified physics based 2-D analytical model for DC self-heating in Nanowire-FET is presented for the first time. The carrier and lattice-temperatures are considered in the model to include the effect of self-heating in Nanowire-FET. The model uses superposition approach to solve 2-D Poisson’s equation capturing the electrostatic potential of the device while the energy balance equation and temperature dependent mobility equation captures the effect of increased lattice temperature. By obtaining a good agreement with calibrated 3-D Sentaurus-TCAD electro-thermal simulations, the accuracy of the developed model is validated.
{"title":"A Physics Based Model for DC Self-Heating in Nanowire-FET Considering Lattice Temperature","authors":"Manoj Kumar, A. Bansal, K. Aditya, Charu Gupta, Anshul Gupta, A. Dixit","doi":"10.1109/icee44586.2018.8937983","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937983","url":null,"abstract":"In this paper, a unified physics based 2-D analytical model for DC self-heating in Nanowire-FET is presented for the first time. The carrier and lattice-temperatures are considered in the model to include the effect of self-heating in Nanowire-FET. The model uses superposition approach to solve 2-D Poisson’s equation capturing the electrostatic potential of the device while the energy balance equation and temperature dependent mobility equation captures the effect of increased lattice temperature. By obtaining a good agreement with calibrated 3-D Sentaurus-TCAD electro-thermal simulations, the accuracy of the developed model is validated.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79828246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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