Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937909
Kuruva Hemanjaneyulu, Mamta Khaneja, A. Meersha, H. B. Variar, M. Shrivastava
Graphene has shown a great scope beyond the bulk silicon devices for future transistor applications. Even though it has undergone intensive investigations through experimental approach, there are no easy and time efficient computational approaches for analysing the graphene transistors. In this paper we provide methodology for simulating graphene transistors using conventional TCAD tools with appropriate model calibration. We demonstrate the calibration methodology along with few graphene FET simulations with the calibrated set-up.
{"title":"Comprehensive Computational Modelling Approach for Graphene FETs","authors":"Kuruva Hemanjaneyulu, Mamta Khaneja, A. Meersha, H. B. Variar, M. Shrivastava","doi":"10.1109/icee44586.2018.8937909","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937909","url":null,"abstract":"Graphene has shown a great scope beyond the bulk silicon devices for future transistor applications. Even though it has undergone intensive investigations through experimental approach, there are no easy and time efficient computational approaches for analysing the graphene transistors. In this paper we provide methodology for simulating graphene transistors using conventional TCAD tools with appropriate model calibration. We demonstrate the calibration methodology along with few graphene FET simulations with the calibrated set-up.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"19 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72737919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937891
G. Vidya, Praveen C Ramamurthy
New soluble intense blue light emitting bulky ring substituted segmented PPV block copolymer was synthesized by synthesized by using Horner-Emmons condensation polymerization. Rigid cyclohexyl methoxy group substituted distyrylbenzene unit was the chromophore group present in the synthesized segmented block copolymer. The obtained copolymer was dissolved in all common organic solvents. The structure of the copolymer was characterized by using FT-IR, NMR techniques, and elemental analysis. GPC analysis shows that the copolymer has narrow polydispersity index. Thermal gravimetric analysis shows it has excellent thermal stability with maximum decomposition temperature obtained as 422°C. The HOMO and LUMO values of copolymer were estimated from the cyclic voltammograms. Photoluminescence studies show that copolymer gives blue emission. XRD and DSC studies give information about the semi-crystalline nature of the present copolymer. Overall results such as thermal properties, photoluminescence characteristics and low onset voltage from Voltage vs. Current data are confirmed the suitability of the copolymer for fabricating PLEDs.
{"title":"Development of New Blue-Light Emitting PPV Block Copolymer: Synthesis, Characterization and Electro-Optical Studies","authors":"G. Vidya, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8937891","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937891","url":null,"abstract":"New soluble intense blue light emitting bulky ring substituted segmented PPV block copolymer was synthesized by synthesized by using Horner-Emmons condensation polymerization. Rigid cyclohexyl methoxy group substituted distyrylbenzene unit was the chromophore group present in the synthesized segmented block copolymer. The obtained copolymer was dissolved in all common organic solvents. The structure of the copolymer was characterized by using FT-IR, NMR techniques, and elemental analysis. GPC analysis shows that the copolymer has narrow polydispersity index. Thermal gravimetric analysis shows it has excellent thermal stability with maximum decomposition temperature obtained as 422°C. The HOMO and LUMO values of copolymer were estimated from the cyclic voltammograms. Photoluminescence studies show that copolymer gives blue emission. XRD and DSC studies give information about the semi-crystalline nature of the present copolymer. Overall results such as thermal properties, photoluminescence characteristics and low onset voltage from Voltage vs. Current data are confirmed the suitability of the copolymer for fabricating PLEDs.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"88 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80835766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937990
Shrushti K. Tapar, P. Kumbhare, U. Belorkar
We demonstrate the potential of MIS (metal-insulator-semiconductor) type RRAM as an electronic synapse. The fabricated RRAM stack, $mathrm{n^{+}-Si/HfO_{2}/Ti/Al}$ shows pertinent switching only when formed in inversion regime. This can be attributed to role played by an oxide interfacial layer (IL) formed at the HfO2/Si interface and oxygen scavenging layer of Ti metal over the HfO2 layer and the variation in density of oxygen vacancies at the respective interfaces, in filament formation and rupture mechanism. The multiple resistive states are attained by the controlled sweeping to emulate the synaptic behavior. Here with the help of physical model we tried to explain switching of a MIS RRAM and demonstrate the learning of a synapse using STDP which shows the change in device conductance as a temporal function of spiking order. We experimentally corroborate that proposed MIS type RRAM manifests bio-synaptic behavior akin to MIM stack and shows feasibility to be deployed as an artificial synapse for neuromorphic applications.
{"title":"HfO2 based MIS type RRAM as an Electronic Synapse","authors":"Shrushti K. Tapar, P. Kumbhare, U. Belorkar","doi":"10.1109/icee44586.2018.8937990","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937990","url":null,"abstract":"We demonstrate the potential of MIS (metal-insulator-semiconductor) type RRAM as an electronic synapse. The fabricated RRAM stack, $mathrm{n^{+}-Si/HfO_{2}/Ti/Al}$ shows pertinent switching only when formed in inversion regime. This can be attributed to role played by an oxide interfacial layer (IL) formed at the HfO2/Si interface and oxygen scavenging layer of Ti metal over the HfO2 layer and the variation in density of oxygen vacancies at the respective interfaces, in filament formation and rupture mechanism. The multiple resistive states are attained by the controlled sweeping to emulate the synaptic behavior. Here with the help of physical model we tried to explain switching of a MIS RRAM and demonstrate the learning of a synapse using STDP which shows the change in device conductance as a temporal function of spiking order. We experimentally corroborate that proposed MIS type RRAM manifests bio-synaptic behavior akin to MIM stack and shows feasibility to be deployed as an artificial synapse for neuromorphic applications.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"45 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74843051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937849
A. Gorad, U. Ganguly
Spiking neural networks are capable for efficient solutions of Constrained Graphical Optimization problems like the Travelling Salesman Problem (TSP). Such networks employ a sub-net of two coupled neuron with synchronous (in phase) and complementary (out of phase) spiking oscillations. A recent demonstration of energy efficient CMOS neurons based on sub-threshold operation enables low power hardware implementation for such networks. Here we demonstrate a circuit-level simulation of such two-neuron network by low-power sub-threshold CMOS design for neuron using a 65 nm technology and demonstrate complementary spiking oscillations. To design the hardware, in addition to the neuron, peripheral circuitry of Spike Driver, Crossbar array and Synaptic Unit is added to incorporate network synaptic dynamics. Our two-neuron one-synapse integrated network has 2.5 times less energy than a two-neuron system in literature. We estimate its area and find energy consumption of peripheral circuitry to be 2% of the implemented neuron. Such sub-net designs performance are stepping stones to design and estimate the performance of large-scale neural networks for neuromorphic hardware based optimization problems.
{"title":"Oscillatory 2-neuron sub-network design and performance based on sub-threshold CMOS operation","authors":"A. Gorad, U. Ganguly","doi":"10.1109/icee44586.2018.8937849","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937849","url":null,"abstract":"Spiking neural networks are capable for efficient solutions of Constrained Graphical Optimization problems like the Travelling Salesman Problem (TSP). Such networks employ a sub-net of two coupled neuron with synchronous (in phase) and complementary (out of phase) spiking oscillations. A recent demonstration of energy efficient CMOS neurons based on sub-threshold operation enables low power hardware implementation for such networks. Here we demonstrate a circuit-level simulation of such two-neuron network by low-power sub-threshold CMOS design for neuron using a 65 nm technology and demonstrate complementary spiking oscillations. To design the hardware, in addition to the neuron, peripheral circuitry of Spike Driver, Crossbar array and Synaptic Unit is added to incorporate network synaptic dynamics. Our two-neuron one-synapse integrated network has 2.5 times less energy than a two-neuron system in literature. We estimate its area and find energy consumption of peripheral circuitry to be 2% of the implemented neuron. Such sub-net designs performance are stepping stones to design and estimate the performance of large-scale neural networks for neuromorphic hardware based optimization problems.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75004832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937858
Shubham Yadav, S. Avasthi
IBC solar cell structure offers tremendous advantages to perovskite solar cells owing to high carrier mobility in these devices and lower recombination. However, the presence of Grain Boundary in the active layer region tends to increase the surface recombination near the Grain Boundary and this leads to degradation in device performance. In this paper, we have carried out the simulations on MatLab and have tried to quantify the effect of Grain Boundary on the device performance by discussing the parameters such as Defect Density, Band-Bending, SRV near Grain Boundary and Grain Size. The results show that with the typical values of the process parameters, device performance for device length beyond 1 µm is compromised. Further, it was found that by improving on the parameters discussed by an order of 10 can lead to devices with similar performance but with device length up to 8 µm, which can further be increased provided there is improvement in process parameters.
{"title":"Simulation Based Analysis of Grain Boundary in IBC Perovskite Solar Cells","authors":"Shubham Yadav, S. Avasthi","doi":"10.1109/icee44586.2018.8937858","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937858","url":null,"abstract":"IBC solar cell structure offers tremendous advantages to perovskite solar cells owing to high carrier mobility in these devices and lower recombination. However, the presence of Grain Boundary in the active layer region tends to increase the surface recombination near the Grain Boundary and this leads to degradation in device performance. In this paper, we have carried out the simulations on MatLab and have tried to quantify the effect of Grain Boundary on the device performance by discussing the parameters such as Defect Density, Band-Bending, SRV near Grain Boundary and Grain Size. The results show that with the typical values of the process parameters, device performance for device length beyond 1 µm is compromised. Further, it was found that by improving on the parameters discussed by an order of 10 can lead to devices with similar performance but with device length up to 8 µm, which can further be increased provided there is improvement in process parameters.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"12 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89301339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937943
Hasmat Mondal, Poulomi Chakrabarty, Arijit Sarkar, G. Gangopadhyay, R. Basori, S. Ray
This paper reports a broadband absorption of gold nanoparticle-decorated chlorophyll b. Chlorophyll b was extracted from spinach. Au nanoparticles were synthesized by chemical method. Structural and optical characterization of chlorophyll-b and Au nano-particles were also studied. Current-voltage characteristics of chlorophyll-b and Au nanoparticle-decorated chlorophyll b were also studied by fabricating devices using etched ITO glass. Chlorophyll-b has a strong absorption in the blue region at 435 nm and in the red region at 665 nm, whereas Au nanoparticle has its plasmonic peak at 535 nm. Au nanoparticle-decorated chlorophyll b gives a broad absorption spectrum ranging from 315 nm to 1025 nm due to the interaction between chlorophyll b molecules with Au nano-particles.
{"title":"Broadband absorption in Au nanoparticle-decorated chlorophyll b for biophotonic applications","authors":"Hasmat Mondal, Poulomi Chakrabarty, Arijit Sarkar, G. Gangopadhyay, R. Basori, S. Ray","doi":"10.1109/icee44586.2018.8937943","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937943","url":null,"abstract":"This paper reports a broadband absorption of gold nanoparticle-decorated chlorophyll b. Chlorophyll b was extracted from spinach. Au nanoparticles were synthesized by chemical method. Structural and optical characterization of chlorophyll-b and Au nano-particles were also studied. Current-voltage characteristics of chlorophyll-b and Au nanoparticle-decorated chlorophyll b were also studied by fabricating devices using etched ITO glass. Chlorophyll-b has a strong absorption in the blue region at 435 nm and in the red region at 665 nm, whereas Au nanoparticle has its plasmonic peak at 535 nm. Au nanoparticle-decorated chlorophyll b gives a broad absorption spectrum ranging from 315 nm to 1025 nm due to the interaction between chlorophyll b molecules with Au nano-particles.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"42 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87951134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937879
N. Kumari, S. Ingole
Aluminum doped zinc oxide (AZO) is an n-type conductive oxide which is widely used as a transparent electrode in a photovoltaic device. In the present study, AZO thin films have been deposited on glass substrates via RF magnetron sputtering. The effect of deposition parameters such as RF power, substrate-temperature and working pressure on the electrical and structural properties of the films has been studied. With an increase in RF power, substrate-temperature and a decrease in the working pressure, the film resistivity decreases. For example when the substrate-temperature was raised from 50 to 500 °C, the resistivity decreased by three-orders of magnitude viz. from $3 times 10^{1} Omega cdot$cm to $2.78 times 10^{-2} Omega cdot$cm. AZO thin film with resistivity as low as $6.59 times 10^{-3} Omega cdot$cm has been achieved with RF power of 100 W, substrate-temperature of 350 °C and a working pressure of $1 times 10^{-3}$ mbar.
{"title":"Transport Properties of RF-Magnetron Sputtered AZO Thin Films: The Effect of Processes Parameters During and Post Deposition","authors":"N. Kumari, S. Ingole","doi":"10.1109/icee44586.2018.8937879","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937879","url":null,"abstract":"Aluminum doped zinc oxide (AZO) is an n-type conductive oxide which is widely used as a transparent electrode in a photovoltaic device. In the present study, AZO thin films have been deposited on glass substrates via RF magnetron sputtering. The effect of deposition parameters such as RF power, substrate-temperature and working pressure on the electrical and structural properties of the films has been studied. With an increase in RF power, substrate-temperature and a decrease in the working pressure, the film resistivity decreases. For example when the substrate-temperature was raised from 50 to 500 °C, the resistivity decreased by three-orders of magnitude viz. from $3 times 10^{1} Omega cdot$cm to $2.78 times 10^{-2} Omega cdot$cm. AZO thin film with resistivity as low as $6.59 times 10^{-3} Omega cdot$cm has been achieved with RF power of 100 W, substrate-temperature of 350 °C and a working pressure of $1 times 10^{-3}$ mbar.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"27 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81578859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937915
M. Dewapriya, R. Rajapakse
A comprehensive molecular dynamics study is conducted to investigate the elastic field at an atomic inhomogeneity in graphene in the form of a circular hole or a circular boron-nitride inclusion. In addition, the effect on the stress field due to the interaction between an inhomogeneity and a crack is investigated. The results confirm that consideration must be given to the mechanical properties of the resulting system when atomic defects and inclusions are introduced to graphene to tailor optical and electronic properties.
{"title":"MD Simulation of Elastic Field at an Inhomogeneity in Graphene","authors":"M. Dewapriya, R. Rajapakse","doi":"10.1109/icee44586.2018.8937915","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937915","url":null,"abstract":"A comprehensive molecular dynamics study is conducted to investigate the elastic field at an atomic inhomogeneity in graphene in the form of a circular hole or a circular boron-nitride inclusion. In addition, the effect on the stress field due to the interaction between an inhomogeneity and a crack is investigated. The results confirm that consideration must be given to the mechanical properties of the resulting system when atomic defects and inclusions are introduced to graphene to tailor optical and electronic properties.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"12 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88765625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937948
Murugappan Ramanathan, R. Pratap
This paper presents the design and validation of latch MEMS g-switches based on energy calculations. Modelling of a MEMS g-switch that senses a threshold acceleration is carried and compared against experimental results performed on fabricated devices. The device is modelled as a single-degree-of-freedom system with a spring, mass, damper and a non-linear sliding contact for latching. On applying an input acceleration greater than the threshold value, the device latches closing the circuit, and thus we know that the threshold acceleration is reached. The input energy to the system is characterized from the acceleration-time profile and the energy associated with each component, viz., the spring, mass, damper and the sliding friction is calculated from experiments and energy balance is done on the system. Thus the calculated energies, geometric parameters of the switch designed using energy balance are verified.
{"title":"Energy Based Design And Validation of Latch MEMS g-Switch","authors":"Murugappan Ramanathan, R. Pratap","doi":"10.1109/icee44586.2018.8937948","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937948","url":null,"abstract":"This paper presents the design and validation of latch MEMS g-switches based on energy calculations. Modelling of a MEMS g-switch that senses a threshold acceleration is carried and compared against experimental results performed on fabricated devices. The device is modelled as a single-degree-of-freedom system with a spring, mass, damper and a non-linear sliding contact for latching. On applying an input acceleration greater than the threshold value, the device latches closing the circuit, and thus we know that the threshold acceleration is reached. The input energy to the system is characterized from the acceleration-time profile and the energy associated with each component, viz., the spring, mass, damper and the sliding friction is calculated from experiments and energy balance is done on the system. Thus the calculated energies, geometric parameters of the switch designed using energy balance are verified.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"64 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90746819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937938
G. K. Chandrashekara, Srinivasa Reddy, Praveen C Ramamurthy
To study the effect of fluorination on hole transporting materials (BTD-Th and BTD-F-Th) for the efficient perovskite solar cells, we designed and synthesized a novel D-A-D type hole transporting molecule having benzo[1,2-c][1,2,5]thiadiazole (BTD) as electron acceptor unit and thiophene (Th) as a simple electron donor unit. The D-A-D molecules BTD-Th and BTD-F-Th were synthesized by palladium(0) catalyzed Stille coupling reaction. The electrochemical band gap of synthesized compounds varies from -1.5 eV to -1.7 eV, Which were ideal for hole transport material (with perovskite active layer) and effective electron blocking layer. The architecture of the perovskite device is glass/ITO/SnO2/CH3NH3PbI3(Perovskite)/Hole Transport Material/Ag.
为了研究氟化对高效钙钛矿太阳能电池空穴输运材料(BTD-Th和BTD- f -Th)的影响，我们设计并合成了以苯并[1,2-c][1,2,5]噻二唑(BTD)为电子受体单元，噻吩(Th)为简单电子给体单元的新型D-A-D型空穴输运分子。采用钯(0)催化Stille偶联反应合成了D-A-D分子BTD-Th和BTD-F-Th。合成的化合物的电化学带隙在-1.5 eV ~ -1.7 eV之间，是理想的空穴传输材料(含钙钛矿活性层)和有效的电子阻挡层。钙钛矿器件的结构为玻璃/ITO/SnO2/CH3NH3PbI3(钙钛矿)/空穴传输材料/Ag。
{"title":"Effect of Fluorination on the D-A-D type Hole Transporting Materials for Perovskite Solar Cells","authors":"G. K. Chandrashekara, Srinivasa Reddy, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8937938","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937938","url":null,"abstract":"To study the effect of fluorination on hole transporting materials (BTD-Th and BTD-F-Th) for the efficient perovskite solar cells, we designed and synthesized a novel D-A-D type hole transporting molecule having benzo[1,2-c][1,2,5]thiadiazole (BTD) as electron acceptor unit and thiophene (Th) as a simple electron donor unit. The D-A-D molecules BTD-Th and BTD-F-Th were synthesized by palladium(0) catalyzed Stille coupling reaction. The electrochemical band gap of synthesized compounds varies from -1.5 eV to -1.7 eV, Which were ideal for hole transport material (with perovskite active layer) and effective electron blocking layer. The architecture of the perovskite device is glass/ITO/SnO2/CH3NH3PbI3(Perovskite)/Hole Transport Material/Ag.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"36 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83627406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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