As essential building blocks for thin film transistors (TFTs), the metal-oxide-semiconductor (MOS) structure will be fundamentally important for understanding the effect of mechanical bending on TFTs. In this work, HfO2/Al2O3 high-k dielectric bilayers are deposited on Si nanomembranes (NM) by plasma-enhanced atomic layer deposition (PEALD), thus achieving vertical structured flexible MOS capacitors based on such composite gate stack on plastic substrates. Devices demonstrate outstanding capacitance-voltage (C-V) characteristics with nearly no hysteresis voltage, a suppressed stretch-out effect and low frequency dispersion, highlighting HfO2/Al2O3 stacked films as a promising dielectric alternative for high performance bendable and stretchable electronics.
{"title":"Capacitance-Voltage Investigation of HfO2/Al2O3 Bilayered High-k Dielectrics on Si Nanomembrane","authors":"Chen Liu, Zhuofan Wang, Yuming Zhang, Hongliang Lu, J. Zhao, Yimen Zhang, Lixin Guo","doi":"10.1109/IFETC.2018.8583845","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583845","url":null,"abstract":"As essential building blocks for thin film transistors (TFTs), the metal-oxide-semiconductor (MOS) structure will be fundamentally important for understanding the effect of mechanical bending on TFTs. In this work, HfO2/Al2O3 high-k dielectric bilayers are deposited on Si nanomembranes (NM) by plasma-enhanced atomic layer deposition (PEALD), thus achieving vertical structured flexible MOS capacitors based on such composite gate stack on plastic substrates. Devices demonstrate outstanding capacitance-voltage (C-V) characteristics with nearly no hysteresis voltage, a suppressed stretch-out effect and low frequency dispersion, highlighting HfO2/Al2O3 stacked films as a promising dielectric alternative for high performance bendable and stretchable electronics.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"4 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82565083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583976
L. Rovati, S. Cattini, P. Fabbri, L. Ferrari
Modern flexible circuit systems can include sensing elements. In this paper, possible implementation of a fluorescence pH sensor suitable for measurement of near neutral solution based on a polymer film is presented. Polymer films can satisfy the requests of the modern flexible systems, such as miniaturization, flexibility and enhanced sensitivity, allowing high performance sensing at low cost. Design, development and performance evaluation of the sensor are presented.
{"title":"Fluorescence pH Sensor Based on Polymer Film","authors":"L. Rovati, S. Cattini, P. Fabbri, L. Ferrari","doi":"10.1109/IFETC.2018.8583976","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583976","url":null,"abstract":"Modern flexible circuit systems can include sensing elements. In this paper, possible implementation of a fluorescence pH sensor suitable for measurement of near neutral solution based on a polymer film is presented. Polymer films can satisfy the requests of the modern flexible systems, such as miniaturization, flexibility and enhanced sensitivity, allowing high performance sensing at low cost. Design, development and performance evaluation of the sensor are presented.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"94 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83176783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583839
S. Beeby, R. Torah, J. Tudor, Menglong Li, A. Komolafe, Kai Yang
This paper summarizes the research at the University of Southampton towards integrated autonomous electronic textiles (e-textiles). Textiles are difficult materials to work with due to their surface roughness and pilosity, and the constraints they impose on the processing of materials such as low-temperature curing. Powering autonomous e-textiles is at present also a limitation. This paper presents a technique for reliably integrating electronic circuits into textiles. A wide range of functional e-textiles has been demonstrated. Energy harvesting and storage methods are also evaluated and discussed. Whilst these offer the potential for delivering and storing useful amounts of energy, developing these into reliable and practical solutions remains an ongoing challenge.
{"title":"Functional Electronic Textiles: Circuit Integration and Energy Harvesting Power Supplies","authors":"S. Beeby, R. Torah, J. Tudor, Menglong Li, A. Komolafe, Kai Yang","doi":"10.1109/IFETC.2018.8583839","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583839","url":null,"abstract":"This paper summarizes the research at the University of Southampton towards integrated autonomous electronic textiles (e-textiles). Textiles are difficult materials to work with due to their surface roughness and pilosity, and the constraints they impose on the processing of materials such as low-temperature curing. Powering autonomous e-textiles is at present also a limitation. This paper presents a technique for reliably integrating electronic circuits into textiles. A wide range of functional e-textiles has been demonstrated. Energy harvesting and storage methods are also evaluated and discussed. Whilst these offer the potential for delivering and storing useful amounts of energy, developing these into reliable and practical solutions remains an ongoing challenge.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"222 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75907746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583990
C. Bao, Manpreet Kaur, Young-Jin Kwack, Woon-Seop Choi, Yeongjun Lee, Tae‐Woo Lee, W. Kim
This report describes 3D printed ion-selective field effect transistors (IS-FET), which contains electro-chemical working electrodes for selective ion detection. For the comparison of behaviors, two different types of field effect transistors are fabricated by 3D printing and vacuum deposition. And both types of FETs are integrated with the 3D printed ion-selective electrodes. Then, the sensing performance of these two types of IS-FET has been investigated. The source-drain current for the whole 3D printed IS-FET is in the scale of 10−8 A, which can be compared with current scale of deposited IS-FET with 10−6 A.
{"title":"3D Printed Ion-Selective Field Effect Transistors","authors":"C. Bao, Manpreet Kaur, Young-Jin Kwack, Woon-Seop Choi, Yeongjun Lee, Tae‐Woo Lee, W. Kim","doi":"10.1109/IFETC.2018.8583990","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583990","url":null,"abstract":"This report describes 3D printed ion-selective field effect transistors (IS-FET), which contains electro-chemical working electrodes for selective ion detection. For the comparison of behaviors, two different types of field effect transistors are fabricated by 3D printing and vacuum deposition. And both types of FETs are integrated with the 3D printed ion-selective electrodes. Then, the sensing performance of these two types of IS-FET has been investigated. The source-drain current for the whole 3D printed IS-FET is in the scale of 10−8 A, which can be compared with current scale of deposited IS-FET with 10−6 A.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"9 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89966645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583922
Kiran Kumar Sappati, S. Bhadra
We report a flexible, light weight and low cost piezoelectric polymer composite film produced from polydimethylsiloxane and barium titanate nanoparticle composite. Simple spin coating is employed for obtaining the thin film with aluminum foils as top and bottom electrodes. The composite film exhibits a maximum open circuit voltage of 350 mV across the thickness during vertical press/release. The open circuit voltage response is dependent on the force applied on the film. Experiment proves that the piezo property of the polymer composite film is obtained due to the addition of BaTiO3 Nps. It has great potential to be used in printed and flexible Sensors.
{"title":"0–3 Polymer/Barium Titanate Nano Structures Based Flexible Piezoelectric Film","authors":"Kiran Kumar Sappati, S. Bhadra","doi":"10.1109/IFETC.2018.8583922","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583922","url":null,"abstract":"We report a flexible, light weight and low cost piezoelectric polymer composite film produced from polydimethylsiloxane and barium titanate nanoparticle composite. Simple spin coating is employed for obtaining the thin film with aluminum foils as top and bottom electrodes. The composite film exhibits a maximum open circuit voltage of 350 mV across the thickness during vertical press/release. The open circuit voltage response is dependent on the force applied on the film. Experiment proves that the piezo property of the polymer composite film is obtained due to the addition of BaTiO3 Nps. It has great potential to be used in printed and flexible Sensors.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"105 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73041348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8584024
K. Myny
Amorphous metal-oxide thin-film transistors (TFTs) are ideal candidates as key technology for item-level Internet-of-Things applications, because they have the potential of being a low-cost technology exhibiting great mechanical performance as it can be fabricated directly on flexible substrates. As such, ultrathin, flexible integrated circuits can be seamlessly integrated into objects. The most mainstream metal-oxide TFT technology is based on Indium-Gallium-Zinc-Oxide (IGZO) as semiconductor, resulting in n-type transistors with an electron mobility around 10–20cm 2 /Vs [1] .
{"title":"Flexible Internet-of-Things Circuits Based on Thin-Film Transistors","authors":"K. Myny","doi":"10.1109/IFETC.2018.8584024","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8584024","url":null,"abstract":"Amorphous metal-oxide thin-film transistors (TFTs) are ideal candidates as key technology for item-level Internet-of-Things applications, because they have the potential of being a low-cost technology exhibiting great mechanical performance as it can be fabricated directly on flexible substrates. As such, ultrathin, flexible integrated circuits can be seamlessly integrated into objects. The most mainstream metal-oxide TFT technology is based on Indium-Gallium-Zinc-Oxide (IGZO) as semiconductor, resulting in n-type transistors with an electron mobility around 10–20cm 2 /Vs [1] .","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"191 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75685540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8584006
B. Tiwari, J. Martins, Shivam Kalla, S. Kaushik, Ana Santa, P. Bahubalindruni, V. Tavares, P. Barquinha
This paper presents a high speed digitally programmable Ring Oscillator (RO) using Indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). Proposed circuit ensures high speed compared to the conventional ROs using negative skewed scheme, in which each inverter delay is reduced by pre-maturely switching on/off the transistors. In addition, by controlling the load capacitance of each inverter through digital control bits, a programmable frequency of oscillation was attained. Proposed RO performance is compared with two conventional designs under same conditions. From simulation, it has been observed that the proposed circuit has shown a higher frequency of oscillations (283 KHz) compared to the conventional designs (76.52 KHz and 144.9 KHz) under same conditions. Due to the programmable feature, the circuit is able to generate 8 different linearly spaced frequencies ranging from 241.2 KHz to 283 KHz depending upon three digital control bits with almost rail-to-rail voltage swing. The circuit is a potential on-chip clock generator in many real-world flexible systems, such as, smart packaging, wearable devices, RFIDs and displays that need multi frequencies.
{"title":"A High Speed Programmable Ring Oscillator Using InGaZnO Thin-Film Transistors","authors":"B. Tiwari, J. Martins, Shivam Kalla, S. Kaushik, Ana Santa, P. Bahubalindruni, V. Tavares, P. Barquinha","doi":"10.1109/IFETC.2018.8584006","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8584006","url":null,"abstract":"This paper presents a high speed digitally programmable Ring Oscillator (RO) using Indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). Proposed circuit ensures high speed compared to the conventional ROs using negative skewed scheme, in which each inverter delay is reduced by pre-maturely switching on/off the transistors. In addition, by controlling the load capacitance of each inverter through digital control bits, a programmable frequency of oscillation was attained. Proposed RO performance is compared with two conventional designs under same conditions. From simulation, it has been observed that the proposed circuit has shown a higher frequency of oscillations (283 KHz) compared to the conventional designs (76.52 KHz and 144.9 KHz) under same conditions. Due to the programmable feature, the circuit is able to generate 8 different linearly spaced frequencies ranging from 241.2 KHz to 283 KHz depending upon three digital control bits with almost rail-to-rail voltage swing. The circuit is a potential on-chip clock generator in many real-world flexible systems, such as, smart packaging, wearable devices, RFIDs and displays that need multi frequencies.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"136 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76397523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8584029
T. Fukushima, Y. Susumago, H. Kino, Tetsu Tanaka, A. Alam, A. Hanna, S. Iyer
We fabricate FlexTrateTM that is highly integrated bendable and/or rollable electronic systems in which various Si and/or III–V chips are embedded in elastomers and interconnected at the wafer level. This paper describes the process integration of the FlexTrateTM using massively parallel capillary self-assembly and a new single stress buffer layer technologies to form fine-pitch interconnection between the embedded neighboring chips and characterize the electrical/mechanical properties.
{"title":"Process Integration for FlexTrateTM","authors":"T. Fukushima, Y. Susumago, H. Kino, Tetsu Tanaka, A. Alam, A. Hanna, S. Iyer","doi":"10.1109/IFETC.2018.8584029","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8584029","url":null,"abstract":"We fabricate FlexTrateTM that is highly integrated bendable and/or rollable electronic systems in which various Si and/or III–V chips are embedded in elastomers and interconnected at the wafer level. This paper describes the process integration of the FlexTrateTM using massively parallel capillary self-assembly and a new single stress buffer layer technologies to form fine-pitch interconnection between the embedded neighboring chips and characterize the electrical/mechanical properties.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"37 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75999857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583883
I. Kymissis, Caroline Yu, Y. Hsu, Pedro Piacenza, Emily Hannigan, Matei Ciocarle, Peter Allen
Flexible electronic technologies offer the potential for the co-integration of mechanical sensors that measure the state of the flexible surface under actuation or deformation. This format of sensor offers significant opportunities for the instrumentation of existing systems for a range of applications such as touch, measurement of acoustic field, and the detection of deformation modes of a system. Beyond the instrumentation of existing systems, flexible devices can themselves serve as actuators, allowing for sheet-based robotic devices, as well as the development of sensor formats for challenging applications.
{"title":"Sheet-based flexible technologies for mechanical sensing","authors":"I. Kymissis, Caroline Yu, Y. Hsu, Pedro Piacenza, Emily Hannigan, Matei Ciocarle, Peter Allen","doi":"10.1109/IFETC.2018.8583883","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583883","url":null,"abstract":"Flexible electronic technologies offer the potential for the co-integration of mechanical sensors that measure the state of the flexible surface under actuation or deformation. This format of sensor offers significant opportunities for the instrumentation of existing systems for a range of applications such as touch, measurement of acoustic field, and the detection of deformation modes of a system. Beyond the instrumentation of existing systems, flexible devices can themselves serve as actuators, allowing for sheet-based robotic devices, as well as the development of sensor formats for challenging applications.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"73 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80509365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583886
Qing Li, Czang-Ho Lee, M. Asad, M. Sachdev, W. Wong
Amorphous silicon (a-Si) thin-film transistor (TFT) technology has enabled the current flat-panel display industry and is used in a wide variety of consumer electronic products ranging from televisions to smart-phones. This technology has also been integrated onto plastic platforms and has enabled the fabrication of flexible a-Si based TFTs. When combined with light-emitting diodes (LEDs), low-power and high-brightness flexible emissive displays may be achieved. Due to its disordered structure, the electrical instability of a-Si TFTs can significantly limit the lifetime of the TFT operation. For flexible devices, the addition of mechanical strain due to bending of the substrate contributes to the electrical instability that limits the useful lifetime of devices. In this work, a novel 5-TFT and 1-capacitor (5T1C) pixel circuit has been proposed to mitigate the impact of the electrical instability of a-Si TFTs using a unique charge-transfer process. The proposed pixel circuit has been fabricated onto flexible substrate and the measurement results demonstrated less than 4% degradation of its output current after a 24-hour stress test under mechanical strain. Moreover, a significant reduction of external control-signal power consumption and complexity has also been demonstrated.
非晶硅(a- si)薄膜晶体管(TFT)技术使当前的平板显示行业成为可能，并广泛应用于从电视到智能手机等各种消费电子产品。这项技术也被集成到塑料平台上，并使柔性a-Si基tft的制造成为可能。当与发光二极管(led)结合时，可以实现低功耗和高亮度的柔性发光显示器。由于其无序结构，a-Si TFT的电不稳定性极大地限制了TFT的使用寿命。对于柔性器件，由于基板弯曲而增加的机械应变会导致电气不稳定，从而限制器件的使用寿命。在这项工作中，提出了一种新的5-TFT和1-电容器(5T1C)像素电路，使用独特的电荷转移过程来减轻a- si tft的电不稳定性的影响。所提出的像素电路已制作在柔性衬底上，测量结果表明，在机械应变下进行24小时应力测试后，其输出电流的衰减小于4%。此外，还证明了外部控制信号功耗和复杂性的显著降低。
{"title":"Operation and Control of Flexible Display Pixel Circuits Under Mechanical Bending","authors":"Qing Li, Czang-Ho Lee, M. Asad, M. Sachdev, W. Wong","doi":"10.1109/IFETC.2018.8583886","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583886","url":null,"abstract":"Amorphous silicon (a-Si) thin-film transistor (TFT) technology has enabled the current flat-panel display industry and is used in a wide variety of consumer electronic products ranging from televisions to smart-phones. This technology has also been integrated onto plastic platforms and has enabled the fabrication of flexible a-Si based TFTs. When combined with light-emitting diodes (LEDs), low-power and high-brightness flexible emissive displays may be achieved. Due to its disordered structure, the electrical instability of a-Si TFTs can significantly limit the lifetime of the TFT operation. For flexible devices, the addition of mechanical strain due to bending of the substrate contributes to the electrical instability that limits the useful lifetime of devices. In this work, a novel 5-TFT and 1-capacitor (5T1C) pixel circuit has been proposed to mitigate the impact of the electrical instability of a-Si TFTs using a unique charge-transfer process. The proposed pixel circuit has been fabricated onto flexible substrate and the measurement results demonstrated less than 4% degradation of its output current after a 24-hour stress test under mechanical strain. Moreover, a significant reduction of external control-signal power consumption and complexity has also been demonstrated.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86618410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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