Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8584033
Rupinder Kaur, N. Saluja
Circuit designing with quantum dot cellular automata is one of the most recent technologies which aim at scaling of devices. In this logic design technique, the organization of quantum cells defines the circuit. It is based on field coupled computing. The quantum dot cellular automata has numerous advantages including less area occupied, lack of interconnects, higher clock frequency, and since it doesn’t involve transfer of electrons or flow of current, it has the potential to perform low power calculation. This paper presents the comparison of 1-bit memory cell designed using CMOS technology and quantum dot cellular technology. The quantum dot cellular technology results in lesser occupied area at high clock frequency.
{"title":"Comparative analysis of 1-bit memory cell in CMOS and QCA technology","authors":"Rupinder Kaur, N. Saluja","doi":"10.1109/IFETC.2018.8584033","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8584033","url":null,"abstract":"Circuit designing with quantum dot cellular automata is one of the most recent technologies which aim at scaling of devices. In this logic design technique, the organization of quantum cells defines the circuit. It is based on field coupled computing. The quantum dot cellular automata has numerous advantages including less area occupied, lack of interconnects, higher clock frequency, and since it doesn’t involve transfer of electrons or flow of current, it has the potential to perform low power calculation. This paper presents the comparison of 1-bit memory cell designed using CMOS technology and quantum dot cellular technology. The quantum dot cellular technology results in lesser occupied area at high clock frequency.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"102 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85411093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583842
P. Kowalczewski, A. Wiatrowska, M. Dusza, Maciej Zięba, P. Cichon, Krzysztof Fijak, F. Granek
We present a comprehensive approach to print submicron conductive lines at unprecedented flexibility, accuracy, and low cost. We will discuss both the fundamental process of a guided assembly of nanoparticles and its implementation in the XTPL Submicron Lab Printer. Finally, we demonstrate a number of potential applications of this technology.
{"title":"Novel Approach to Print Submicron Conductive Lines: From the Fundamental Process to the Laboratory Printer","authors":"P. Kowalczewski, A. Wiatrowska, M. Dusza, Maciej Zięba, P. Cichon, Krzysztof Fijak, F. Granek","doi":"10.1109/IFETC.2018.8583842","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583842","url":null,"abstract":"We present a comprehensive approach to print submicron conductive lines at unprecedented flexibility, accuracy, and low cost. We will discuss both the fundamental process of a guided assembly of nanoparticles and its implementation in the XTPL Submicron Lab Printer. Finally, we demonstrate a number of potential applications of this technology.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"97 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82719210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583891
N. Papadopoulos, S. Smout, M. Willegems, Marc Ameys, Ganesh Rathinavel, G. Beeckman, J. Stuijt, K. Myny
In this paper a capacitive coupled radio-frequency identification tag fabricated on flexible thin-film substrate is presented. The antenna of the tag is monolithic integrated “on-chip”. The footprint of the tag is defined by the size of the antenna, 1cm2. The tag operated at 24V applied reader voltage at a frequency of 1MHz. The achieved data transmission speed of the thin-film tag is 5.8kbps. The technology is a unipolar indium gallium zinc oxide (IGZO) self-aligned transistor architecture.
{"title":"1cm2 sub-1V Capacitive-Coupled Thin Film ID-Tag using Metal-oxide TFTs on Flexible Substrate","authors":"N. Papadopoulos, S. Smout, M. Willegems, Marc Ameys, Ganesh Rathinavel, G. Beeckman, J. Stuijt, K. Myny","doi":"10.1109/IFETC.2018.8583891","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583891","url":null,"abstract":"In this paper a capacitive coupled radio-frequency identification tag fabricated on flexible thin-film substrate is presented. The antenna of the tag is monolithic integrated “on-chip”. The footprint of the tag is defined by the size of the antenna, 1cm2. The tag operated at 24V applied reader voltage at a frequency of 1MHz. The achieved data transmission speed of the thin-film tag is 5.8kbps. The technology is a unipolar indium gallium zinc oxide (IGZO) self-aligned transistor architecture.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"69 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89515338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583972
T. Claypole, Andrew Claypole, J. Claypole, Sarah-Jane Potts, T. Mortensen
GNP (Graphene Nano Platelets) have the potential to create cost-effective electronic inks for a wide range of volume printed applications. However, in common with other nano carbons these are inherently inert making it difficult to bond and disperse. While some naturally occurring functional groups, such as oxygen, ethers, carboxyls or hydroxyls, are attached to the raw GNP, adding to or modifying these chemical groups, in a controlled fashion can exfoliate sheets, improve consistency and enable tailored interactions. It also enhances particle separation and improves dispersion, which are key factors for the manufacture of functional inks. This also enables the formulation of functional inks for applications such as printed electronics, sensors, energy storage, smart packaging and wearable technology.A low temperature, dry plasma process based on tumbling nano materials through a plasma has the capability to add a range of functional groups in a high volume scalable process. The functional groups added depend on the plasma gas with the quantity dependent on the processing time. It has been postulated that the functional groups attach to the edge of the graphene sheets and at defect sites. In order to gain insight into the location and the nature of the attachment of the chemical groups, Scanning Transmitting Electron Microscope (STEM) was used to study the atomic structures of the functionalised GNP’s. This confirmed that the various functional groups had attached to the edge of the graphene sheets. The number of layers towards the centre of the GNP meant it was not possible to identify whether there were also loosely bonded groups attached to the surface or chemically bonded to defects.Further insight into the effect of the functionalisation was gained by formulating inks to study the rheology of the ink and printability. Model inks were created with GNPs with different functional groups. A combination of rheological measures, including constant shear, Small Amplitude Oscillatory Shear (SAOS) and Controlled Stress Parallel Superposition (CSPS), were used to establish the relationships between carbon loading, functionalisation and printability. These techniques also have potential applications for ink quality assurance and formulation.Inks with properties ranging from flexible conductive inks to pressure sensing inks were made by adding carbon black and graphite. These can be printed over large areas using conventional processes such screen printing, flexography and roller coating. The performance was dependent on the blend of nano carbons and the other components in the ink. Triple roll milling was used to homogenise the ink. The high shear forces this induces causes further exfoliation of some of the GNP’s, leading to inks containing a mix of graphene, FLG and GNP’s. Screen printable conductive and pressure sensor inks have been created. The latter has unique properties as it is sensitive in one direction only which enables the creation of very
{"title":"Plasma Functionalised GNP for Volume Printed Flexible Electronics","authors":"T. Claypole, Andrew Claypole, J. Claypole, Sarah-Jane Potts, T. Mortensen","doi":"10.1109/IFETC.2018.8583972","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583972","url":null,"abstract":"GNP (Graphene Nano Platelets) have the potential to create cost-effective electronic inks for a wide range of volume printed applications. However, in common with other nano carbons these are inherently inert making it difficult to bond and disperse. While some naturally occurring functional groups, such as oxygen, ethers, carboxyls or hydroxyls, are attached to the raw GNP, adding to or modifying these chemical groups, in a controlled fashion can exfoliate sheets, improve consistency and enable tailored interactions. It also enhances particle separation and improves dispersion, which are key factors for the manufacture of functional inks. This also enables the formulation of functional inks for applications such as printed electronics, sensors, energy storage, smart packaging and wearable technology.A low temperature, dry plasma process based on tumbling nano materials through a plasma has the capability to add a range of functional groups in a high volume scalable process. The functional groups added depend on the plasma gas with the quantity dependent on the processing time. It has been postulated that the functional groups attach to the edge of the graphene sheets and at defect sites. In order to gain insight into the location and the nature of the attachment of the chemical groups, Scanning Transmitting Electron Microscope (STEM) was used to study the atomic structures of the functionalised GNP’s. This confirmed that the various functional groups had attached to the edge of the graphene sheets. The number of layers towards the centre of the GNP meant it was not possible to identify whether there were also loosely bonded groups attached to the surface or chemically bonded to defects.Further insight into the effect of the functionalisation was gained by formulating inks to study the rheology of the ink and printability. Model inks were created with GNPs with different functional groups. A combination of rheological measures, including constant shear, Small Amplitude Oscillatory Shear (SAOS) and Controlled Stress Parallel Superposition (CSPS), were used to establish the relationships between carbon loading, functionalisation and printability. These techniques also have potential applications for ink quality assurance and formulation.Inks with properties ranging from flexible conductive inks to pressure sensing inks were made by adding carbon black and graphite. These can be printed over large areas using conventional processes such screen printing, flexography and roller coating. The performance was dependent on the blend of nano carbons and the other components in the ink. Triple roll milling was used to homogenise the ink. The high shear forces this induces causes further exfoliation of some of the GNP’s, leading to inks containing a mix of graphene, FLG and GNP’s. Screen printable conductive and pressure sensor inks have been created. The latter has unique properties as it is sensitive in one direction only which enables the creation of very","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"59 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82311582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583913
Ramita Trangkanukulkij, Taeil Kim, W. Kim
The 3D printed passive radio frequency identification (RFID) tags with integrated electronic components on flexible polyimide is fabricated. The RF antenna and chip interconnection are printed with a silver nanoparticle based conductive ink. The antenna was optimized to match with resonance frequency of RFID chip as 910 MHz. And components and an RFID chip are mounted and soldered. Selected RFID chip contains electronic product code (EPC) and built-in temperature sensor, which allows temperature sensing ability as well as multiple identification.
{"title":"A 3D Printed Flexible Passive RFID for Temperature Sensing","authors":"Ramita Trangkanukulkij, Taeil Kim, W. Kim","doi":"10.1109/IFETC.2018.8583913","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583913","url":null,"abstract":"The 3D printed passive radio frequency identification (RFID) tags with integrated electronic components on flexible polyimide is fabricated. The RF antenna and chip interconnection are printed with a silver nanoparticle based conductive ink. The antenna was optimized to match with resonance frequency of RFID chip as 910 MHz. And components and an RFID chip are mounted and soldered. Selected RFID chip contains electronic product code (EPC) and built-in temperature sensor, which allows temperature sensing ability as well as multiple identification.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"1 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82332661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583906
G. Cantarella, Sudhir Kumar, J. Jagielski, C. Shih, G. Tröster
Flexible perovskite light-emitting diodes (LEDs) have attracted increasing interest to realize ultrathin, light weight, highly conformable and nonfragile vivid displays. Solution-processed lead halide perovskite offers numerous distinctive characteristics such as pure emission color, tunable bandgaps, and low fabrication cost. In this letter, green perovskite LEDs (PeLEDs) are fabricated on 50 μm thin polyimide substrates. Using colloidal 2D formamidinium lead bromide perovskite emitter, the PeLEDs show a high current efficiency (ηCE) of 5.3 cd A−1 with a peak emission at 529 ± 1 nm and a narrow width of 22.8 nm. The resultant green emission shows a record high color saturation, > 95%, in the Rec. 2020 standard gamut area. To demonstrate their mechanical flexibility, the device functionality is proved by dynamic bending experiments down to 10 mm up to 5000 cycles, resulting in device lifetime over 36 h in glove box and a drop of ηCE and external quantum efficiency (ηxt) as low as 15 % and 18 %, respectively.
柔性钙钛矿发光二极管(led)在实现超薄、轻量、高适应性和不易损坏的生动显示方面受到越来越多的关注。溶液处理卤化铅钙钛矿提供了许多独特的特点，如纯净的发射色，可调的带隙，和低制造成本。在这封信中，绿色钙钛矿led (PeLEDs)是在50 μm薄的聚酰亚胺衬底上制造的。采用胶体二维甲脒基溴化铅钙钛矿发射体制备的等离子体具有较高的电流效率(ηCE)为5.3 cd a−1，峰值发射波长为529±1 nm，窄宽度为22.8 nm。由此产生的绿色辐射在Rec. 2020标准色域区域显示出创纪录的高色彩饱和度，> 95%。为了证明其机械灵活性，通过动态弯曲实验证明了该器件的功能，该器件在手套箱中使用寿命超过36小时，ηCE和外部量子效率(ηxt)分别下降了15%和18%。
{"title":"Flexible Green Perovskite Light Emitting Diodes","authors":"G. Cantarella, Sudhir Kumar, J. Jagielski, C. Shih, G. Tröster","doi":"10.1109/IFETC.2018.8583906","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583906","url":null,"abstract":"Flexible perovskite light-emitting diodes (LEDs) have attracted increasing interest to realize ultrathin, light weight, highly conformable and nonfragile vivid displays. Solution-processed lead halide perovskite offers numerous distinctive characteristics such as pure emission color, tunable bandgaps, and low fabrication cost. In this letter, green perovskite LEDs (PeLEDs) are fabricated on 50 μm thin polyimide substrates. Using colloidal 2D formamidinium lead bromide perovskite emitter, the PeLEDs show a high current efficiency (ηCE) of 5.3 cd A−1 with a peak emission at 529 ± 1 nm and a narrow width of 22.8 nm. The resultant green emission shows a record high color saturation, > 95%, in the Rec. 2020 standard gamut area. To demonstrate their mechanical flexibility, the device functionality is proved by dynamic bending experiments down to 10 mm up to 5000 cycles, resulting in device lifetime over 36 h in glove box and a drop of ηCE and external quantum efficiency (ηxt) as low as 15 % and 18 %, respectively.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"6 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80640979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8584025
D. Ban
Nanowire based nanogenerators are fabricated on flexible substrates, which convert mechanical energy to electrical energy. The energy harvesting performance of the devices is significantly improved by optimizing the doping concentration of the nanowires and by integrating a nanocrystalline/amorphous Si:H single junction solar cell.
{"title":"Nanogenerators on Flexible Substrates","authors":"D. Ban","doi":"10.1109/IFETC.2018.8584025","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8584025","url":null,"abstract":"Nanowire based nanogenerators are fabricated on flexible substrates, which convert mechanical energy to electrical energy. The energy harvesting performance of the devices is significantly improved by optimizing the doping concentration of the nanowires and by integrating a nanocrystalline/amorphous Si:H single junction solar cell.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"8 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82071108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583985
M. Vaseem, A. Shamim
For the emerging field of flexible printed electronics, ink compatibility with substrate is always required. However, most of the commercial silver nanoparticle-based inks are not compatible with flexible substrates, as they need high- sintering temperatures (~150–250 °C). In addition, silver nanoparticle-based inks have several serious problems such as a complex synthesis protocol, high cost, particle aggregation, nozzle clogging, reduced shelf life, and jetting instability. These shortcomings in conductive inks are barriers for their wide spread use in practical applications. In this work, we demonstrate a silver-organo-complex (SOC) based particle free silver ink which can decompose at 80 °C and becomes conductive at this low temperature. The inkjet-printed film from this ink exhibits not only high conductivity but also excellent jetting and storage stability. To demonstrate the suitability of this ink for flexible electronics, an inkjet-printed film on flexible polyimide substrate is subjected to bending and crushing tests. The results before and after flexing and crushing are very similar, thus verifying the excellent tolerance against bending and crushing for this ink as compared to the commercial nanoparticles based ink.
{"title":"Low Temperature (80 °C) Sinterable Particle Free Silver Ink for Flexible Electronics","authors":"M. Vaseem, A. Shamim","doi":"10.1109/IFETC.2018.8583985","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583985","url":null,"abstract":"For the emerging field of flexible printed electronics, ink compatibility with substrate is always required. However, most of the commercial silver nanoparticle-based inks are not compatible with flexible substrates, as they need high- sintering temperatures (~150–250 °C). In addition, silver nanoparticle-based inks have several serious problems such as a complex synthesis protocol, high cost, particle aggregation, nozzle clogging, reduced shelf life, and jetting instability. These shortcomings in conductive inks are barriers for their wide spread use in practical applications. In this work, we demonstrate a silver-organo-complex (SOC) based particle free silver ink which can decompose at 80 °C and becomes conductive at this low temperature. The inkjet-printed film from this ink exhibits not only high conductivity but also excellent jetting and storage stability. To demonstrate the suitability of this ink for flexible electronics, an inkjet-printed film on flexible polyimide substrate is subjected to bending and crushing tests. The results before and after flexing and crushing are very similar, thus verifying the excellent tolerance against bending and crushing for this ink as compared to the commercial nanoparticles based ink.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"163 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73361056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583876
S. Tokito
The latest developments in flexible and printed electronics technology based on organic thin-film transistor (OTFT) devices as well as printable electronic materials are briefly reported on in this paper. The successful fabrication and operation of printed OTFT devices and a variety of integrated circuit applications such as flip-flop logic gates and operational amplifiers will be demonstrated.
{"title":"Flexible Printed Organic Thin-Film Transistor Devices and Integrated Circuit Applications","authors":"S. Tokito","doi":"10.1109/IFETC.2018.8583876","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583876","url":null,"abstract":"The latest developments in flexible and printed electronics technology based on organic thin-film transistor (OTFT) devices as well as printable electronic materials are briefly reported on in this paper. The successful fabrication and operation of printed OTFT devices and a variety of integrated circuit applications such as flip-flop logic gates and operational amplifiers will be demonstrated.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"22 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75464085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-08-01DOI: 10.1109/IFETC.2018.8583869
J. Park, C. Zhou, C. Y. Yang
We present a review of existing published works on carbon nanostructures such as graphene, carbon nanotubes, and carbon nanofibers, including their use as MOSFET channel and/or interconnect materials. The characteristics of material contacts with carbon-based nanostructures are examined for potential applications in flexible wearable electronics. Combining results of electrical measurements and interface characterization provides the necessary knowledge for continuous improvements of the nanostructure fabrication process and contact properties.
{"title":"Contacts with Nanocarbon Structures in Flexible Electronics","authors":"J. Park, C. Zhou, C. Y. Yang","doi":"10.1109/IFETC.2018.8583869","DOIUrl":"https://doi.org/10.1109/IFETC.2018.8583869","url":null,"abstract":"We present a review of existing published works on carbon nanostructures such as graphene, carbon nanotubes, and carbon nanofibers, including their use as MOSFET channel and/or interconnect materials. The characteristics of material contacts with carbon-based nanostructures are examined for potential applications in flexible wearable electronics. Combining results of electrical measurements and interface characterization provides the necessary knowledge for continuous improvements of the nanostructure fabrication process and contact properties.","PeriodicalId":6609,"journal":{"name":"2018 International Flexible Electronics Technology Conference (IFETC)","volume":"70 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74627586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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