Graphene oxide (GO) has emerged as a pivotal material for high rate sodium ions storage attributed to the tunable interlayer spacing, high specific surface area, and excellent electrical conductivity. However, the restacking and narrow interlayer spacing of GO layers restrict their cycle life and rate capability. In this study, organic 3,3′-diaminobenzidine (DABZ) molecules are embedded into the interlayers of GO via a molecular welding technique. The DABZ molecules are strongly anchored between GO layers via stable amide (HN-C = O) bonds which formed through the dehydration condensation reaction between -COOH groups on GO and -NH2 groups of DABZ molecules. It can not only contribute a pillar effect that enlarging the interlayer spacing, but also introduces a traction effect that enhancing the structural stability of GO. Consequently, the interlayer spacing of GO is expanded to 0.88 nm compared with that of 0.71 nm for GO, thereby optimizing the layered structure and enhanced sodium-ion storage rate capability. The DABZ-GO demonstrated an exceptional reversible capacity of 245.1 mAh g⁻1 after 1200 cycles at a current density of 0.5 A g⁻1 and the DABZ-GO||AC sodium ion capacitors (SICs) also achieved an energy density of 45.1 Wh kg⁻1 and a power density of 9494.7 W kg⁻1, with a capacity retention rate of 60.1% after 5000 cycles. The proposed molecular welding-chemical bond anchoring strategy provides an innovative and efficient approach for modulating interlayer spacing and design stable and high rate sodium ions storage materials.
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