Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808264
Sebastian Anzinger, Christian Bretthauer, J. Manz, U. Krumbein, A. Dehé
This work presents capacitive ultrasonic transceivers based on a dual-backplate MEMS microphone technology. The transducers exploit mechanical and acoustical system resonances in the low ultrasonic frequency range up to 100 kHz for both sending and receiving of ultrasonic signals. Requiring below 10V bias voltage and using standard MEMS microphone housings with dimensions of 4x3x1 mm³, the proposed system allows an integration into space and power critical systems like e.g. smartphones. While the ultrasonic transceiver functionality enables proximity sensing and presence detection applications, state-of-the-art audio performance of 68 dB(A) signal-to-noise ratio (SNR) is maintained.
{"title":"Broadband Acoustical MEMS Transceivers for Simultaneous Range Finding and Microphone Applications","authors":"Sebastian Anzinger, Christian Bretthauer, J. Manz, U. Krumbein, A. Dehé","doi":"10.1109/TRANSDUCERS.2019.8808264","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808264","url":null,"abstract":"This work presents capacitive ultrasonic transceivers based on a dual-backplate MEMS microphone technology. The transducers exploit mechanical and acoustical system resonances in the low ultrasonic frequency range up to 100 kHz for both sending and receiving of ultrasonic signals. Requiring below 10V bias voltage and using standard MEMS microphone housings with dimensions of 4x3x1 mm³, the proposed system allows an integration into space and power critical systems like e.g. smartphones. While the ultrasonic transceiver functionality enables proximity sensing and presence detection applications, state-of-the-art audio performance of 68 dB(A) signal-to-noise ratio (SNR) is maintained.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"107 1","pages":"865-868"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82289094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808374
Mingyo Park, Zhijian Hao, D. Kim, A. Clark, R. Dargis, A. Ansari
This work reports on the first demonstration of Lamb-wave resonators based on single-crystalline Scandium (Sc)-doped Aluminum Nitride (AlN) films operating at 8-10 GHz. Sc-AlN and AlN films are grown on Silicon substrates using molecular beam epitaxy (MBE). The electrodes are defined using electron beam lithography with sub-micron feature sizes to maximize the electromechanical coupling coefficient$(k_t^2)$. A high $k_t^2$ value of 4.8 % is reported at 9.9 GHz, with unloaded Quality factor (Qm) of 185, yielding $f times {Q_m} times k_t^2$ values of 74 GHz. The high $k_t^2$ is attributed to enhanced piezoelectric coefficients achieved due to single crystallinity, as well as Sc-doping. This work demonstrates higher performance resonators achieved by using single-crystalline Sc-AlN thin films compared to sputter-deposited films with sub-micron thicknesses, required for 5G filter applications.
{"title":"A 10 GHz Single-Crystalline Scandium-Doped Aluminum Nitride Lamb-Wave Resonator","authors":"Mingyo Park, Zhijian Hao, D. Kim, A. Clark, R. Dargis, A. Ansari","doi":"10.1109/TRANSDUCERS.2019.8808374","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808374","url":null,"abstract":"This work reports on the first demonstration of Lamb-wave resonators based on single-crystalline Scandium (Sc)-doped Aluminum Nitride (AlN) films operating at 8-10 GHz. Sc-AlN and AlN films are grown on Silicon substrates using molecular beam epitaxy (MBE). The electrodes are defined using electron beam lithography with sub-micron feature sizes to maximize the electromechanical coupling coefficient$(k_t^2)$. A high $k_t^2$ value of 4.8 % is reported at 9.9 GHz, with unloaded Quality factor (Qm) of 185, yielding $f times {Q_m} times k_t^2$ values of 74 GHz. The high $k_t^2$ is attributed to enhanced piezoelectric coefficients achieved due to single crystallinity, as well as Sc-doping. This work demonstrates higher performance resonators achieved by using single-crystalline Sc-AlN thin films compared to sputter-deposited films with sub-micron thicknesses, required for 5G filter applications.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"1 1","pages":"450-453"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83112079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808764
Taeyup Kim, Seohyeong Jang, Bobaro Chang, Jin-Woo Sung, Seunghyun Lee, H. Ko, K. Koo, D. Cho
Silicon nanowire (SiNW) has received great attention in sensing applications because of its outstanding piezoresistive (PZR) effects. However, the difficulty of integrating SiNWs and sensor structures has hindered the development of various SiNW-based sensors. This paper presents a new simple, scalable fabrication method for SiNWs and its application to accelerometers. The developed method enables monolithic integration of SiNWs with sensing structures and allows controlling the dimensions of SiNWs and sensor structures independently. Furthermore, the developed method has significantly reduced fabrication complexity when compared to the previous approach by reducing the number of mask layers. In this paper, a SiNW-based PZR accelerometer is fabricated using the developed method, and experiments are performed. Compared to commercial capacitive accelerometers, the presented PZR accelerometer can reduce approximately 36 % of the total area by replacing the comb-type capacitive sensing units by much smaller SiNWs.
{"title":"A New Simple Fabrication Method for Silicon Nanowire-Based Accelerometers","authors":"Taeyup Kim, Seohyeong Jang, Bobaro Chang, Jin-Woo Sung, Seunghyun Lee, H. Ko, K. Koo, D. Cho","doi":"10.1109/TRANSDUCERS.2019.8808764","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808764","url":null,"abstract":"Silicon nanowire (SiNW) has received great attention in sensing applications because of its outstanding piezoresistive (PZR) effects. However, the difficulty of integrating SiNWs and sensor structures has hindered the development of various SiNW-based sensors. This paper presents a new simple, scalable fabrication method for SiNWs and its application to accelerometers. The developed method enables monolithic integration of SiNWs with sensing structures and allows controlling the dimensions of SiNWs and sensor structures independently. Furthermore, the developed method has significantly reduced fabrication complexity when compared to the previous approach by reducing the number of mask layers. In this paper, a SiNW-based PZR accelerometer is fabricated using the developed method, and experiments are performed. Compared to commercial capacitive accelerometers, the presented PZR accelerometer can reduce approximately 36 % of the total area by replacing the comb-type capacitive sensing units by much smaller SiNWs.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"23 1","pages":"1949-1952"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83904313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808202
Muhammad Wajih Ullah Siddiqi, Joshua E-Y Lee
This paper describes the novel use of a hybrid phononic crystal (PnC) array formed by two PnC shapes on anchoring boundaries of a 7th harmonic Lamb wave aluminum nitride on silicon (AlN-on-Si) resonator. We demonstrate the effect of the hybrid PnC in boosting Q to the order 104. The hybrid PnC array comprises a disk PnC with a wide acoustic bandgap (ABG) and a ring PnC as an intermediary routing layer for input/output (I/O) electrical feeds to more effectively reduce anchor loss. We show that the wide ABG disk PnC provides 47dB of acoustic attenuation in a Lamb wave delay line.
{"title":"Quality Factor Enhancement of AlN-on-Si Lamb Wave Resonators Using a Hybrid of Phononic Crystal Shapes in Anchoring Boundaries","authors":"Muhammad Wajih Ullah Siddiqi, Joshua E-Y Lee","doi":"10.1109/TRANSDUCERS.2019.8808202","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808202","url":null,"abstract":"This paper describes the novel use of a hybrid phononic crystal (PnC) array formed by two PnC shapes on anchoring boundaries of a 7th harmonic Lamb wave aluminum nitride on silicon (AlN-on-Si) resonator. We demonstrate the effect of the hybrid PnC in boosting Q to the order 104. The hybrid PnC array comprises a disk PnC with a wide acoustic bandgap (ABG) and a ring PnC as an intermediary routing layer for input/output (I/O) electrical feeds to more effectively reduce anchor loss. We show that the wide ABG disk PnC provides 47dB of acoustic attenuation in a Lamb wave delay line.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"78 1","pages":"913-916"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88540616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808281
A. Siddiqui, L. Hackett, Daniel Dominguez, A. Tauke-Pedretti, T. Friedmann, G. Peake, Michael R. Miller, J. K. Douglas, M. Eichenfield
This paper demonstrates a monolithic surface acoustic wave amplifier fabricated by state-of-the-art heterogenous integration of a IH-V InGaAs-based epitaxial material stack and LiNb03. Due to the superior properties of the materials employed, we observe electron gain and also non-reciprocal gain in excess of 30dB with reduced power consumption. Additionally, we present a framework for performance optimization as a function of material parameters for a targeted gain. This platform enables further advances in active and non-reciprocal piezoelectric acoustic devices.
{"title":"Large Acoustoelectric Effect in Wafer Bonded Indium Gallium Arsenide / Lithium Niobate Heterostructure Augmented by Novel Gate Control","authors":"A. Siddiqui, L. Hackett, Daniel Dominguez, A. Tauke-Pedretti, T. Friedmann, G. Peake, Michael R. Miller, J. K. Douglas, M. Eichenfield","doi":"10.1109/TRANSDUCERS.2019.8808281","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808281","url":null,"abstract":"This paper demonstrates a monolithic surface acoustic wave amplifier fabricated by state-of-the-art heterogenous integration of a IH-V InGaAs-based epitaxial material stack and LiNb03. Due to the superior properties of the materials employed, we observe electron gain and also non-reciprocal gain in excess of 30dB with reduced power consumption. Additionally, we present a framework for performance optimization as a function of material parameters for a targeted gain. This platform enables further advances in active and non-reciprocal piezoelectric acoustic devices.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"13 1","pages":"61-64"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87324705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808536
A. Martín-Pérez, D. Ramos, J. Tamayo, M. Calleja
Hollow nanomechanical resonators represent a promising technique for particle spectrometry, as their design allows highly sensitive particle mass sensing in liquid environments by putting together the good mechanical behavior of a nanomechanical resonator vibrating in vacuum or gas environment with physiological compatibility of liquid environments for biological applications. Nevertheless, for real-world practical applications these sensors require not only a high mass sensitivity but also a high-throughput particle flow. In this work, we use a fast-response and low-cost hollow nanomechanical resonator which let us measure up to 10 particles per second. However, this unprecedented particle velocities brings new implications related to the entanglement between the mechanics and the microfluidics in this structure. We realized that the measured particle masses depend on the fluid velocity. The study of this phenomenon demonstrates the need to introduce a correction factor in mass sensing dependent on particle velocity.
{"title":"Real-Time Particle Spectrometry in Liquid Environment Using Microfluidic-Nanomechanical Resonators","authors":"A. Martín-Pérez, D. Ramos, J. Tamayo, M. Calleja","doi":"10.1109/TRANSDUCERS.2019.8808536","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808536","url":null,"abstract":"Hollow nanomechanical resonators represent a promising technique for particle spectrometry, as their design allows highly sensitive particle mass sensing in liquid environments by putting together the good mechanical behavior of a nanomechanical resonator vibrating in vacuum or gas environment with physiological compatibility of liquid environments for biological applications. Nevertheless, for real-world practical applications these sensors require not only a high mass sensitivity but also a high-throughput particle flow. In this work, we use a fast-response and low-cost hollow nanomechanical resonator which let us measure up to 10 particles per second. However, this unprecedented particle velocities brings new implications related to the entanglement between the mechanics and the microfluidics in this structure. We realized that the measured particle masses depend on the fluid velocity. The study of this phenomenon demonstrates the need to introduce a correction factor in mass sensing dependent on particle velocity.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"20 1","pages":"2146-2149"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81510101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808635
Jiaming Liang, Yichuan Wu, Huiwen Kan, Renxiao Xu, Zhichun Shao, Wenying Qiu, Tao Jiang, Mingjing Qi, Min Zhang, Liwei Lin, Xiaohao Wang
This paper shows vacuum powered pneumatic actuators designed for wearable robots using the Kirigami of polymeric thin films for the first time. Distinctive advancements have been achieved, including (1) lightweight and the flexible thin sheet of polymeric materials made by Kirigami designs to allow either bending or twisting movements; (2) capable of shape-transforming to the surrounding such as the attachments to the surface of the cloth. The design concept, material/fabrication process, and driving mechanism described in this paper can be potentially extended to a variety of flexible devices and soft robots.
{"title":"Vacuum Powered Pneumatic Actuator for Wearable Robots by the Kirigami of Polymeric Films","authors":"Jiaming Liang, Yichuan Wu, Huiwen Kan, Renxiao Xu, Zhichun Shao, Wenying Qiu, Tao Jiang, Mingjing Qi, Min Zhang, Liwei Lin, Xiaohao Wang","doi":"10.1109/TRANSDUCERS.2019.8808635","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808635","url":null,"abstract":"This paper shows vacuum powered pneumatic actuators designed for wearable robots using the Kirigami of polymeric thin films for the first time. Distinctive advancements have been achieved, including (1) lightweight and the flexible thin sheet of polymeric materials made by Kirigami designs to allow either bending or twisting movements; (2) capable of shape-transforming to the surrounding such as the attachments to the surface of the cloth. The design concept, material/fabrication process, and driving mechanism described in this paper can be potentially extended to a variety of flexible devices and soft robots.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"21 1","pages":"2500-2503"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82933853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808188
H. Begum, Abid Ali, Joshua E-Y Lee
We present, for the first time, mass sensitivity measurements of a novel resonant mode based on a disk resonator that delivers the one of the highest Q-factors among resonators tested in liquid (Q of 362). The mode of interest is referred to as the Button-like (BL) mode as its associated lateral strain profile resembles a shirt button. In the context of mass sensing, the high Q-factor of the BL mode enhances mass resolution. Its motional resistance (Rm) in water is 5.3kΩ, which greatly eases the difficulty in designing control circuits. In this paper, we measured the mass sensitivity of the device by depositing chrome (Cr) on the bottom surface of the device through a back cavity. The resonator has a measured mass sensitivity of 17.2ppm/ng for uniformly deposited mass on the resonator’s surface.
{"title":"Mass Sensitivity Measurements of a Novel High Q-Factor Disk Resonator for Liquid-Phase Sensing Applications","authors":"H. Begum, Abid Ali, Joshua E-Y Lee","doi":"10.1109/TRANSDUCERS.2019.8808188","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808188","url":null,"abstract":"We present, for the first time, mass sensitivity measurements of a novel resonant mode based on a disk resonator that delivers the one of the highest Q-factors among resonators tested in liquid (Q of 362). The mode of interest is referred to as the Button-like (BL) mode as its associated lateral strain profile resembles a shirt button. In the context of mass sensing, the high Q-factor of the BL mode enhances mass resolution. Its motional resistance (Rm) in water is 5.3kΩ, which greatly eases the difficulty in designing control circuits. In this paper, we measured the mass sensitivity of the device by depositing chrome (Cr) on the bottom surface of the device through a back cavity. The resonator has a measured mass sensitivity of 17.2ppm/ng for uniformly deposited mass on the resonator’s surface.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"27 1","pages":"1886-1889"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86855410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808203
M. Dorfmeister, M. Schneider, U. Schmid
This work reports on a novel concept for switching between the two stable states of compressively pre-stressed bistable MEMS membranes using integrated piezoelectric scandium aluminum nitride (ScxAlN1-x) thin film actuators. The minimum voltage needed to switch between the stable states was about 23% lower than using a pure AlN layer. Depending on the membrane diameter being in the range between 600 to 800 µm, the total displacement after switching is about 10 to 16 µm. The array consists of 15 membranes on a 6x6 mm2 die, whereas the total membrane thickness was 3.12 µm. The FFT of a bistable switching process showed most beneficial peaks for ultrasound generation in the range of 70 – 90 kHz with extremely high acceleration values in the range of 105 m•s−2, thus promising high sound pressure levels.
{"title":"A Bistalbe Ultrasonic MEMS Device with an Integrated Piezoelectric Scandium-AlN Thin Film Actuator for Switching","authors":"M. Dorfmeister, M. Schneider, U. Schmid","doi":"10.1109/TRANSDUCERS.2019.8808203","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808203","url":null,"abstract":"This work reports on a novel concept for switching between the two stable states of compressively pre-stressed bistable MEMS membranes using integrated piezoelectric scandium aluminum nitride (ScxAlN1-x) thin film actuators. The minimum voltage needed to switch between the stable states was about 23% lower than using a pure AlN layer. Depending on the membrane diameter being in the range between 600 to 800 µm, the total displacement after switching is about 10 to 16 µm. The array consists of 15 membranes on a 6x6 mm2 die, whereas the total membrane thickness was 3.12 µm. The FFT of a bistable switching process showed most beneficial peaks for ultrasound generation in the range of 70 – 90 kHz with extremely high acceleration values in the range of 105 m•s−2, thus promising high sound pressure levels.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"1 1","pages":"853-856"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76205035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808712
Michitaka Yamamoto, K. Hiraoka, S. Takamatsu, T. Itoh
We developed a micro-corrugation process to fabricate a vertically wavy thin film piezoelectric sensor for highly stretchable human motion sensors. Wavy structure is formed by micro-corrugation process where thin functional film is bent with gears. A continuous wavy structured polyvinylidene difluoride film with 600-µm pitch and 140-µm height was successfully fabricated. The fabricated sensor sustains 15% strain and successfully detects the bending motion of the human finger.
{"title":"Stretchable Wavy Piezoelectric Sensor Fabricated by Micro-Corrugation Process","authors":"Michitaka Yamamoto, K. Hiraoka, S. Takamatsu, T. Itoh","doi":"10.1109/TRANSDUCERS.2019.8808712","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808712","url":null,"abstract":"We developed a micro-corrugation process to fabricate a vertically wavy thin film piezoelectric sensor for highly stretchable human motion sensors. Wavy structure is formed by micro-corrugation process where thin functional film is bent with gears. A continuous wavy structured polyvinylidene difluoride film with 600-µm pitch and 140-µm height was successfully fabricated. The fabricated sensor sustains 15% strain and successfully detects the bending motion of the human finger.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"201 1","pages":"1792-1795"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76978937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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