Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808230
Yan Shi, X. Xi, Yulie Wu, Wei Li, Kun Lu, Z. Hou, Xuezhong Wu, D. Xiao
This paper reports a wafer-level fabrication process for micro hemispherical resonators. Three-dimensional (3-D) structures are formed by high-temperature glassblowing individually to further enhance the structural symmetry. And then these structures are aligned and mounted on a 4-inch jig wafer, following processes including ultrafast laser ablation, metallization and bonding to electrode wafer are accomplished on wafer level. 3-D fused silica resonators with extremely symmetry, easy-operation and compatibility to MEMS procedure are simultaneously realized in this process. Devices with capacitive gap ≈15µm and alignment error below 35 µm are realized. Finally, these devices are characterized through capacitive measurement in vacuum, with n=2 wineglass mode ranging from 8.9 kHz to 9.7 kHz and quality factors between 47,073 to 55,026. The process is promising for the manufacturing of high-performance MEMS devices such as micro hemispherical resonator gyroscopes (µHRG).
{"title":"Wafer-Level Fabrication Process for Micro Hemispherical Resonators","authors":"Yan Shi, X. Xi, Yulie Wu, Wei Li, Kun Lu, Z. Hou, Xuezhong Wu, D. Xiao","doi":"10.1109/TRANSDUCERS.2019.8808230","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808230","url":null,"abstract":"This paper reports a wafer-level fabrication process for micro hemispherical resonators. Three-dimensional (3-D) structures are formed by high-temperature glassblowing individually to further enhance the structural symmetry. And then these structures are aligned and mounted on a 4-inch jig wafer, following processes including ultrafast laser ablation, metallization and bonding to electrode wafer are accomplished on wafer level. 3-D fused silica resonators with extremely symmetry, easy-operation and compatibility to MEMS procedure are simultaneously realized in this process. Devices with capacitive gap ≈15µm and alignment error below 35 µm are realized. Finally, these devices are characterized through capacitive measurement in vacuum, with n=2 wineglass mode ranging from 8.9 kHz to 9.7 kHz and quality factors between 47,073 to 55,026. The process is promising for the manufacturing of high-performance MEMS devices such as micro hemispherical resonator gyroscopes (µHRG).","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"175 1","pages":"1670-1673"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76653459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808282
Arash Fouladi Azarnaminy, R. Mansour
This paper presents an experimental investigation of the performance of Aluminum Nitride (AlN) on Silicon resonators operating over a wide temperature range. The resonators are measured over the temperature range of -196°C to +120°C. Linear and nonlinear characterization of the proposed resonator is presented over an input power range from 8dBm to 20dBm. The paper also presents measured results of a 3-pole band-pass filter designed using such type of resonators.
{"title":"Analysis of Aluminum Nitride Resonators and Filters Over Temperature and Under High Power","authors":"Arash Fouladi Azarnaminy, R. Mansour","doi":"10.1109/TRANSDUCERS.2019.8808282","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808282","url":null,"abstract":"This paper presents an experimental investigation of the performance of Aluminum Nitride (AlN) on Silicon resonators operating over a wide temperature range. The resonators are measured over the temperature range of -196°C to +120°C. Linear and nonlinear characterization of the proposed resonator is presented over an input power range from 8dBm to 20dBm. The paper also presents measured results of a 3-pole band-pass filter designed using such type of resonators.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"20 1","pages":"897-900"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75516769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808236
Sagnik Ghosh, Joshua E-Y Lee
We report the novel use of a higher harmonic Lamb wave modes to realize a piezoelectric readout Lorentz force magnetometer (LFM). The proposed design aims to significantly enhance the pre-amplified sensitivity per unit of excitation current (referred to as the responsivity here) relative to the fundamental mode in the same resonator. By exploiting an 11th harmonic Lamb mode biconvex resonator, we experimentally demonstrate over 5 times increase in responsivity over another device based on the fundamental mode. Compared to state-of-art capacitive LFMs encapsulated in vacuum for high quality factor (Q), the 11th order Lamb wave LFM reported herein boasts a ten-fold boost to responsivity (26.8ppm/mT) in ambient (i.e. atmospheric) pressure.
{"title":"Eleventh Order Lamb Wave Mode Biconvex Piezoelectric Lorentz Force Magnetometer for Scaling Up Responsivity and Bandwidth","authors":"Sagnik Ghosh, Joshua E-Y Lee","doi":"10.1109/TRANSDUCERS.2019.8808236","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808236","url":null,"abstract":"We report the novel use of a higher harmonic Lamb wave modes to realize a piezoelectric readout Lorentz force magnetometer (LFM). The proposed design aims to significantly enhance the pre-amplified sensitivity per unit of excitation current (referred to as the responsivity here) relative to the fundamental mode in the same resonator. By exploiting an 11th harmonic Lamb mode biconvex resonator, we experimentally demonstrate over 5 times increase in responsivity over another device based on the fundamental mode. Compared to state-of-art capacitive LFMs encapsulated in vacuum for high quality factor (Q), the 11th order Lamb wave LFM reported herein boasts a ten-fold boost to responsivity (26.8ppm/mT) in ambient (i.e. atmospheric) pressure.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"25 1","pages":"146-149"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78225677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808566
M. Ebermann, N. Neumann, S. Hoppe, K. Hiller, J. Seiler, C. Helke, M. Meinig, S. Kurth
This paper reports on the progress in miniaturization of bulk micromachined FP filters and tunable detector modules for the mid infrared. The chip size was reduced from 7×7 mm² to 5×5 mm², enabling integration into TO5-size detector packages, which is about only one quarter of the formerly used TO8. At the same time a high optical throughput is maintained. A MEMS design with two movable reflectors is used, which allows for lower actuation voltages and provides negligible acceleration sensitivity.
{"title":"Next Generation of Highly Miniaturized Bulk-Mems Fabry-Pérot Filters For Infrared Microspectrometers","authors":"M. Ebermann, N. Neumann, S. Hoppe, K. Hiller, J. Seiler, C. Helke, M. Meinig, S. Kurth","doi":"10.1109/TRANSDUCERS.2019.8808566","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808566","url":null,"abstract":"This paper reports on the progress in miniaturization of bulk micromachined FP filters and tunable detector modules for the mid infrared. The chip size was reduced from 7×7 mm² to 5×5 mm², enabling integration into TO5-size detector packages, which is about only one quarter of the formerly used TO8. At the same time a high optical throughput is maintained. A MEMS design with two movable reflectors is used, which allows for lower actuation voltages and provides negligible acceleration sensitivity.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"24 1","pages":"470-473"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78774121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808191
Y. Ito, T. Osaki, K. Kamiya, Tetsuya Yamada, N. Miki, S. Takeuchi
This work designs and demonstrates the lipid bilayer-based ultra-sensitive biosensor capable of short-time detection in a quantitative manner, which is achieved by connecting multiple sensor elements in parallel.Artificial cell membranes with functional membrane proteins can form sensitive/selective biosensors. But the sensors suffer lengthy detection time at low concentration of analytes because the sensing mechanism relies on stochastic phenomena.In this work, we connected independent membrane sensors in parallel, where the ionic current through the multiple membranes was monitored by a single detector. With this format, the detection time is shortened based on the number of the array and the sensing can be quantitative. We developed a quad sensor assembling four membranes in parallel, and examined detection time of a single membrane sensor, the quad sensor, and four parallel quad-sensors. 1-GΩ resistor was installed in series with each membrane to avoid overload current caused by membrane rupture. The results showed significant improvement in the detection time and deviation by the parallelization, which promises quantitative monitoring with the stochastic sensor.
{"title":"Quad Lipid Bilayer Module with 1-GΩ Series Resistors Toward Quantitative Stochastic-Biosensors","authors":"Y. Ito, T. Osaki, K. Kamiya, Tetsuya Yamada, N. Miki, S. Takeuchi","doi":"10.1109/TRANSDUCERS.2019.8808191","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808191","url":null,"abstract":"This work designs and demonstrates the lipid bilayer-based ultra-sensitive biosensor capable of short-time detection in a quantitative manner, which is achieved by connecting multiple sensor elements in parallel.Artificial cell membranes with functional membrane proteins can form sensitive/selective biosensors. But the sensors suffer lengthy detection time at low concentration of analytes because the sensing mechanism relies on stochastic phenomena.In this work, we connected independent membrane sensors in parallel, where the ionic current through the multiple membranes was monitored by a single detector. With this format, the detection time is shortened based on the number of the array and the sensing can be quantitative. We developed a quad sensor assembling four membranes in parallel, and examined detection time of a single membrane sensor, the quad sensor, and four parallel quad-sensors. 1-GΩ resistor was installed in series with each membrane to avoid overload current caused by membrane rupture. The results showed significant improvement in the detection time and deviation by the parallelization, which promises quantitative monitoring with the stochastic sensor.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"29 1","pages":"6-8"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87205861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808513
T. Tsukamoto, Shuji Tanaka
This paper reports an automated mismatch compensation method for a rate integrating gyroscope (RIG). The eigenmodes of an ideal degenerated resonator are clockwise (CW) and counterclockwise (CCW) modes, which are independent each other. However, the frequency and Q-factor mismatches of the resonator, which are generally unavoidable because of fabrication imperfectness, entangles these eigenmodes. This cross-coupling effect between CW and CCW modes deteriorate the linearity and causes the angle locking [1]. Thus, in this paper, a method to detects the cross-coupling terms (i.e. the frequency and Q mismatches) and tunes the driving signals to compensate these mismatches was proposed. The proposed method was experimentally confirmed using an electromagnetic ring resonator. The cross-coupling terms, which come from the frequency and Q-factor mismatches, were reduced to be 3 orders of magnitude by this method.
{"title":"Automated Frequency and Quality Factor Mismatch Compensation Method for MEMS Rate Integrating Gyroscope","authors":"T. Tsukamoto, Shuji Tanaka","doi":"10.1109/TRANSDUCERS.2019.8808513","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808513","url":null,"abstract":"This paper reports an automated mismatch compensation method for a rate integrating gyroscope (RIG). The eigenmodes of an ideal degenerated resonator are clockwise (CW) and counterclockwise (CCW) modes, which are independent each other. However, the frequency and Q-factor mismatches of the resonator, which are generally unavoidable because of fabrication imperfectness, entangles these eigenmodes. This cross-coupling effect between CW and CCW modes deteriorate the linearity and causes the angle locking [1]. Thus, in this paper, a method to detects the cross-coupling terms (i.e. the frequency and Q mismatches) and tunes the driving signals to compensate these mismatches was proposed. The proposed method was experimentally confirmed using an electromagnetic ring resonator. The cross-coupling terms, which come from the frequency and Q-factor mismatches, were reduced to be 3 orders of magnitude by this method.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"1 1","pages":"1831-1834"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87211062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808568
Shin-Li Wang, Revathi Sukesan, I. Sarangadharan, Yu-Lin Wang
A portable measurement system is used in this research. Our sensor has a short response time of 15 minutes, and the operation method is easy and convenient, suitable for home-care, as opposed to laboratory standard equipment like ICP-MS. This ion selective sensor has high sensitivity which is beyond ideal Nernst sensitivity, and a lower detection limit than that of ICP-MS. This Hg-ISMFET sensor can directly detect mercury ion from waste water which is from factory without any pre-treatment. In the future we can apply our sensor to detect mercury ion in food, Chinese medicine, and tea etc.
{"title":"FET Based Heavy Metal Ion Sensor to Detect Mercury Ion from Waste Water","authors":"Shin-Li Wang, Revathi Sukesan, I. Sarangadharan, Yu-Lin Wang","doi":"10.1109/TRANSDUCERS.2019.8808568","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808568","url":null,"abstract":"A portable measurement system is used in this research. Our sensor has a short response time of 15 minutes, and the operation method is easy and convenient, suitable for home-care, as opposed to laboratory standard equipment like ICP-MS. This ion selective sensor has high sensitivity which is beyond ideal Nernst sensitivity, and a lower detection limit than that of ICP-MS. This Hg-ISMFET sensor can directly detect mercury ion from waste water which is from factory without any pre-treatment. In the future we can apply our sensor to detect mercury ion in food, Chinese medicine, and tea etc.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"68 1","pages":"1270-1273"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82529203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808335
Pierre Moritz, F. Mathieu, D. Bourrier, D. Saya, T. Blon, K. Hasselbach, R. Kramer, L. Nicu, L. Lacroix, G. Viau, T. Leïchlé
This paper presents a new class of high-performance permanent micro-magnets based on the controlled assembly of cobalt nanorods for the electromagnetic transduction of MEMS. Micromagnets are fabricated using a low temperature fabrication process that yields a dense material exhibiting high coercive field and remanence to saturation magnetization ratio. The cartography of the magnetic induction produced by the sub-millimeter size magnets was obtained using a scanning Hall effect micro-probe microscope. Silicon microcantilevers placed in the vicinity of these magnets were successfully actuated using the Lorentz force with low currents. The good signal to noise ratio measured at resonance demonstrates the potentiality of these nanostructured micro-magnets.
{"title":"Development Of Micro-Magnets For The Electromagnetic Transduction Of MEMS","authors":"Pierre Moritz, F. Mathieu, D. Bourrier, D. Saya, T. Blon, K. Hasselbach, R. Kramer, L. Nicu, L. Lacroix, G. Viau, T. Leïchlé","doi":"10.1109/TRANSDUCERS.2019.8808335","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808335","url":null,"abstract":"This paper presents a new class of high-performance permanent micro-magnets based on the controlled assembly of cobalt nanorods for the electromagnetic transduction of MEMS. Micromagnets are fabricated using a low temperature fabrication process that yields a dense material exhibiting high coercive field and remanence to saturation magnetization ratio. The cartography of the magnetic induction produced by the sub-millimeter size magnets was obtained using a scanning Hall effect micro-probe microscope. Silicon microcantilevers placed in the vicinity of these magnets were successfully actuated using the Lorentz force with low currents. The good signal to noise ratio measured at resonance demonstrates the potentiality of these nanostructured micro-magnets.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"50 1","pages":"1748-1751"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82544410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808553
R. Okojie, D. Lukco, Carl W. Chang, E. Savrun
Initial characterization of MEMS-based single crystal 4H-SiC piezoresistive pressure sensors has been performed to determine the operational reliability over time at 800 °C. Important parameters such as the zero pressure offset, bridge resistance, and pressure sensitivity as affected by temperature were extracted. These parameters showed relative stability within the prescribed operational window of the sensor at 800 °C. Of significance was the increase in pressure sensitivity with increasing temperature beyond 400 °C, to the extent that the sensitivity at 800 °C equal to or higher than the room temperature value. The sensor can, therefore, be inserted further into the higher temperature section of the test article, thereby making it possible to capture higher frequency bandwidths of the thermoacoustic instabilities, which is critical for the validation of computational fluid dynamics predictive models.
{"title":"Characterization of Silicon Carbide Pressure Sensors at 800 °C","authors":"R. Okojie, D. Lukco, Carl W. Chang, E. Savrun","doi":"10.1109/TRANSDUCERS.2019.8808553","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808553","url":null,"abstract":"Initial characterization of MEMS-based single crystal 4H-SiC piezoresistive pressure sensors has been performed to determine the operational reliability over time at 800 °C. Important parameters such as the zero pressure offset, bridge resistance, and pressure sensitivity as affected by temperature were extracted. These parameters showed relative stability within the prescribed operational window of the sensor at 800 °C. Of significance was the increase in pressure sensitivity with increasing temperature beyond 400 °C, to the extent that the sensitivity at 800 °C equal to or higher than the room temperature value. The sensor can, therefore, be inserted further into the higher temperature section of the test article, thereby making it possible to capture higher frequency bandwidths of the thermoacoustic instabilities, which is critical for the validation of computational fluid dynamics predictive models.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"56 1","pages":"2080-2083"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89164473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808410
A. Kainz, H. Steiner, W. Hortschitz, J. Schalko, A. Jachimowicz, F. Keplinger
Reliable measurement of the low-frequency and static electric field strength are essential in a number of areas such as atmospheric electricity, high-voltage infrastructure and safety. Such measurements are hard to achieve, since inherent distortions or limited bandwidth render them impossible. This paper shows a distortion-free electric field strength sensor based on a completely passive micromechanical structure with significantly improved suspension for vibration suppression. With this suspension, the responsivity to electric fields was increased while the responsivity to vibrations was decreased by separating the according modes. This trend can be continued to achieve even more robust and more sensitive sensors. The exemplary structure presented in this contribution features a resolution limit of 370 V/m/Hz1/2 and a quotient of 0.39 between the vibrational and the measurement mode frequency.
{"title":"Improved Reference-Free Vibration-Suppressed Optical MEMS Electric Field Strength Sensor","authors":"A. Kainz, H. Steiner, W. Hortschitz, J. Schalko, A. Jachimowicz, F. Keplinger","doi":"10.1109/TRANSDUCERS.2019.8808410","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808410","url":null,"abstract":"Reliable measurement of the low-frequency and static electric field strength are essential in a number of areas such as atmospheric electricity, high-voltage infrastructure and safety. Such measurements are hard to achieve, since inherent distortions or limited bandwidth render them impossible. This paper shows a distortion-free electric field strength sensor based on a completely passive micromechanical structure with significantly improved suspension for vibration suppression. With this suspension, the responsivity to electric fields was increased while the responsivity to vibrations was decreased by separating the according modes. This trend can be continued to achieve even more robust and more sensitive sensors. The exemplary structure presented in this contribution features a resolution limit of 370 V/m/Hz1/2 and a quotient of 0.39 between the vibrational and the measurement mode frequency.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"34 1","pages":"2114-2117"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89192908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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