Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808359
Hemin Zhang, D. Galayko, P. Basset
Electrostatic kinetic energy harvester and more particularly triboelectric nanogenerators (TENG) can generate very high output AC voltages of several hundred volts. In addition, the losses due to the energy transfer between the typically small inner capacitance of the generators and a necessary large reservoir capacitance for collecting the harvested energy, severely limits the energy storage efficiency. In this paper, we propose a 2-stage conditioning system that efficiently manages the high-voltages of a TENG without any external active control. It includes, as the 1st stage, an unstable charge pump (a Bennet doubler) for the signal rectification and, as the 2nd stage, a novel self-actuated electrostatic switch having a narrow hysteresis followed by a DC-DC Buck converter. With this system, the converted energy is improved by 24 times compared to a classical full-wave diode bridge, while the output voltage remains below 20 V and then is compatible with commercial regulators.
{"title":"A Conditioning System for High-Voltage Electrostatic/Triboelectric Energy Harvesters Using Bennet Doubler and Self-Actuated Hysteresis Switch","authors":"Hemin Zhang, D. Galayko, P. Basset","doi":"10.1109/TRANSDUCERS.2019.8808359","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808359","url":null,"abstract":"Electrostatic kinetic energy harvester and more particularly triboelectric nanogenerators (TENG) can generate very high output AC voltages of several hundred volts. In addition, the losses due to the energy transfer between the typically small inner capacitance of the generators and a necessary large reservoir capacitance for collecting the harvested energy, severely limits the energy storage efficiency. In this paper, we propose a 2-stage conditioning system that efficiently manages the high-voltages of a TENG without any external active control. It includes, as the 1st stage, an unstable charge pump (a Bennet doubler) for the signal rectification and, as the 2nd stage, a novel self-actuated electrostatic switch having a narrow hysteresis followed by a DC-DC Buck converter. With this system, the converted energy is improved by 24 times compared to a classical full-wave diode bridge, while the output voltage remains below 20 V and then is compatible with commercial regulators.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"52 1","pages":"346-349"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85908160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808303
T. Olsen, Kyungae Yang, Xin Meng, M. Stojanović, Q. Lin
This paper presents microfluidic isolation of glycan-targeting aptamers. Integrating multiple cycles of affinity selection and nucleic acid amplification in a single device, aptamers can be isolated rapidly from a randomized library of singlestranded oligonucleotides with a small amount of the target glycan and without any off-chip procedures. Experimental results are presented from microfluidic aptamer isolation for the ganglioside GM3, yielding high-affinity aptamers (with a 17.5 µM equilibrium dissociation constant) using less than 500 μg of GM3 within ~ 9 hours. These results demonstrate the potential of our approach to be used to generate aptamers as easily accessible affinity reagents for the emerging field of glycomics.
{"title":"Microfluidic Isolation of Aptamers for Glycan Targets","authors":"T. Olsen, Kyungae Yang, Xin Meng, M. Stojanović, Q. Lin","doi":"10.1109/TRANSDUCERS.2019.8808303","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808303","url":null,"abstract":"This paper presents microfluidic isolation of glycan-targeting aptamers. Integrating multiple cycles of affinity selection and nucleic acid amplification in a single device, aptamers can be isolated rapidly from a randomized library of singlestranded oligonucleotides with a small amount of the target glycan and without any off-chip procedures. Experimental results are presented from microfluidic aptamer isolation for the ganglioside GM3, yielding high-affinity aptamers (with a 17.5 µM equilibrium dissociation constant) using less than 500 μg of GM3 within ~ 9 hours. These results demonstrate the potential of our approach to be used to generate aptamers as easily accessible affinity reagents for the emerging field of glycomics.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"4 1","pages":"21-24"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91137678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808728
M. Futagawa, Keisuke Uemura, Ryuta Oishi, S. Ota, H. Hirano
An ISFET-type pH sensor with stripe gate electrodes to inhibit the drift was fabricated for long-term pH measurement. The line and space patterns of stripe gate electrodes were fabricated under the pH sensing membrane in a channel area of the FET. The voltage was applied to the gate electrodes to suppress the diffusions of the anions from the object solution in the sensing membrane. We confirmed the inhibition of the drift using the gate electrodes.
{"title":"Fabrication of a Stripe-Gate Type pH Sensor for Inhibition of Drift in pH Measurement for Long-Term Soil Monitoring","authors":"M. Futagawa, Keisuke Uemura, Ryuta Oishi, S. Ota, H. Hirano","doi":"10.1109/TRANSDUCERS.2019.8808728","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808728","url":null,"abstract":"An ISFET-type pH sensor with stripe gate electrodes to inhibit the drift was fabricated for long-term pH measurement. The line and space patterns of stripe gate electrodes were fabricated under the pH sensing membrane in a channel area of the FET. The voltage was applied to the gate electrodes to suppress the diffusions of the anions from the object solution in the sensing membrane. We confirmed the inhibition of the drift using the gate electrodes.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"12 1","pages":"1357-1360"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90496771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808269
C. Weigel, S. Sinzinger, M. Hoffmann
The deep etching of glass is still much more challenging than for silicon. In contrast to pure silica, most glasses are complex blends of different oxides including aluminum oxide. In this paper, different borosilicate and aluminosilicate glasses are compared with respect to their etching behavior. It has been found that a process with a high physical power allows the etching of smooth surfaces. Furthermore, the chemical composition as a reason for the taper structure profile is considered.
{"title":"Comparision of Deep Etched Borosilicate Glasses in a Fluorine Based Plasma","authors":"C. Weigel, S. Sinzinger, M. Hoffmann","doi":"10.1109/TRANSDUCERS.2019.8808269","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808269","url":null,"abstract":"The deep etching of glass is still much more challenging than for silicon. In contrast to pure silica, most glasses are complex blends of different oxides including aluminum oxide. In this paper, different borosilicate and aluminosilicate glasses are compared with respect to their etching behavior. It has been found that a process with a high physical power allows the etching of smooth surfaces. Furthermore, the chemical composition as a reason for the taper structure profile is considered.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"1 1","pages":"1678-1681"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87582329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808627
O. Olszewski, J. Kubík, R. Houlihan
This paper presents a MEMS air micro-pump. The innovative aspect of this work includes the demonstration of a single device that can pump air under two different operation modes. In the first mode the device operates based on the principle of an acoustic standing wave. In the second, its operation is based on the mechanical displacement mode. The measured air flow-rate depends on the operation mode and the driving voltage and extends to 2 and 8 mL/min for the acoustic standing wave and displacement mode, respectively.
{"title":"Mems Micro-Pump for Air Sampling Application","authors":"O. Olszewski, J. Kubík, R. Houlihan","doi":"10.1109/TRANSDUCERS.2019.8808627","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808627","url":null,"abstract":"This paper presents a MEMS air micro-pump. The innovative aspect of this work includes the demonstration of a single device that can pump air under two different operation modes. In the first mode the device operates based on the principle of an acoustic standing wave. In the second, its operation is based on the mechanical displacement mode. The measured air flow-rate depends on the operation mode and the driving voltage and extends to 2 and 8 mL/min for the acoustic standing wave and displacement mode, respectively.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"44 1","pages":"2017-2020"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88290387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808534
Seungyong Shin, A. Daruwalla, Minxiang Gong, H. Wen, F. Ayazi
This paper reports on the design, fabrication and characterization of ultra-high linear dynamic range frequency-output resonant accelerometer with wide bandwidth utilizing a novel area-changing electrostatic frequency modulation (ACE-FM) mechanism. The accelerometer consists of a piezoelectrically-actuated free-free-beam resonator implemented in the device layer of an SOI wafer, and a high-stiffness proof-mass in the handle layer, separated from the resonator by a uniform sub-micron gap. Fabricated devices measure 850μg/√Hz VRW and 3milli-g BI with projected linear dynamic range greater than 140dB for accelerations up to 50,000g in a single-ended output configuration. Improved frequency stability can be achieved using differential outputs, which provides a path to realizing 180dB linear dynamic range in a microscale accelerometer for demanding applications including seismometers and aerospace.
{"title":"A Piezoelectric Resonant Accelerometer for Above 140db Linear Dynamic Range High-G Applications","authors":"Seungyong Shin, A. Daruwalla, Minxiang Gong, H. Wen, F. Ayazi","doi":"10.1109/TRANSDUCERS.2019.8808534","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808534","url":null,"abstract":"This paper reports on the design, fabrication and characterization of ultra-high linear dynamic range frequency-output resonant accelerometer with wide bandwidth utilizing a novel area-changing electrostatic frequency modulation (ACE-FM) mechanism. The accelerometer consists of a piezoelectrically-actuated free-free-beam resonator implemented in the device layer of an SOI wafer, and a high-stiffness proof-mass in the handle layer, separated from the resonator by a uniform sub-micron gap. Fabricated devices measure 850μg/√Hz VRW and 3milli-g BI with projected linear dynamic range greater than 140dB for accelerations up to 50,000g in a single-ended output configuration. Improved frequency stability can be achieved using differential outputs, which provides a path to realizing 180dB linear dynamic range in a microscale accelerometer for demanding applications including seismometers and aerospace.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"60 1","pages":"503-506"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83141464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808624
S. Fichtner, D. Kaden, F. Lofink, B. Wagner
Based on the discovery of ferroelectric polarization inversion in piezoelectric Al1.xScxN thin films, this paper presents a double layer actuator stack configuration which demonstrates that the inherent advantages of piezoelectric AlN and Al1-xScxN, like CMOS compatibility, polarization stability and linearity can be combined with the advantages of classical ferroelectric multilayer systems to achieve superior strain output for piezoelectric MEMS actuators with minimal effort compared to alternative multilayer approaches.
{"title":"A Generic CMOS Compatible Piezoelectric Multilayer Actuator Approach Based on Permanent Ferroelectric Polarization Inversion In Al1-X ScxN","authors":"S. Fichtner, D. Kaden, F. Lofink, B. Wagner","doi":"10.1109/TRANSDUCERS.2019.8808624","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808624","url":null,"abstract":"Based on the discovery of ferroelectric polarization inversion in piezoelectric Al1.xScxN thin films, this paper presents a double layer actuator stack configuration which demonstrates that the inherent advantages of piezoelectric AlN and Al1-xScxN, like CMOS compatibility, polarization stability and linearity can be combined with the advantages of classical ferroelectric multilayer systems to achieve superior strain output for piezoelectric MEMS actuators with minimal effort compared to alternative multilayer approaches.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"31 1","pages":"289-292"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89485193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808334
Juzheng Han, Rushan Chen
This paper presents the miniaturization of a broadband MEMS phase detector for X-band application and a new phase-locked loop system based on it. Miniaturization approach of capacitive loading is adopted and a size-reduction of 60% is achieved. Measured S-parameter shows return loss S11 smaller than −15 dB over X-band. Broadband property of phase detection is also verified through experiments. Temperature effect of the phase detector is studied. An integrated PLL circuit model is established with temperature compensation incorporated. Validity of the PLL is confirmed by simulation with respect to tracking and synchronization.
{"title":"Research of a Miniaturized Broadband Mems Phase Detector and its Temperature Effect for Application in Phase-Locked Loops","authors":"Juzheng Han, Rushan Chen","doi":"10.1109/TRANSDUCERS.2019.8808334","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808334","url":null,"abstract":"This paper presents the miniaturization of a broadband MEMS phase detector for X-band application and a new phase-locked loop system based on it. Miniaturization approach of capacitive loading is adopted and a size-reduction of 60% is achieved. Measured S-parameter shows return loss S11 smaller than −15 dB over X-band. Broadband property of phase detection is also verified through experiments. Temperature effect of the phase detector is studied. An integrated PLL circuit model is established with temperature compensation incorporated. Validity of the PLL is confirmed by simulation with respect to tracking and synchronization.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"8 1","pages":"845-848"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78031359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808759
Sally Ahmed, Xuecui Zou, H. Fariborzi
This paper presents a micro-resonator based digital to analog converter (DAC) for the internet of things (IoT) and low power applications. The device consists of a clamped-clamped micro-resonator with multiple electrodes. To enable the operation as a DAC, the air-gap between each partial electrode and the beam is varied based on the weight of input bits, so the beam’s resonance frequency and the output amplitude are decided by digital inputs. The tested DAC consumes 7 pJ/conversion step with a sampling rate of 64 S/s. We show that a sampling rate of 0.1 MS/s and energy/conversion of 2.7 fJ can be achieved by moderate device scaling.
{"title":"A Micro-Resonator Based Digital to Analog Converter for Ultralow Power Applications","authors":"Sally Ahmed, Xuecui Zou, H. Fariborzi","doi":"10.1109/TRANSDUCERS.2019.8808759","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808759","url":null,"abstract":"This paper presents a micro-resonator based digital to analog converter (DAC) for the internet of things (IoT) and low power applications. The device consists of a clamped-clamped micro-resonator with multiple electrodes. To enable the operation as a DAC, the air-gap between each partial electrode and the beam is varied based on the weight of input bits, so the beam’s resonance frequency and the output amplitude are decided by digital inputs. The tested DAC consumes 7 pJ/conversion step with a sampling rate of 64 S/s. We show that a sampling rate of 0.1 MS/s and energy/conversion of 2.7 fJ can be achieved by moderate device scaling.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"146 1","pages":"821-824"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78504801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-23DOI: 10.1109/TRANSDUCERS.2019.8808801
Hadi Najar
This paper reports a novel, rapid and economical approach to calibrate barometric micromechanical capacitive pressure sensors via electrical measurement only using a machine learning approach. Conventional calibration approaches that use physical means are time consuming and require specialized equipment. We proposed and experimentally validated an electrical only approach through machine learning to calibrate the pressure sensor over a wide range of pressures. Using this novel approach, the experimental results show an average absolute accuracy of 1.74hPa within 600hPa to 1100hPa pressure range. The typical absolute accuracy falls well within the ±1hPa. This approach reduces the test time by more than 85%.
{"title":"Electrical Only Calibration of Barometric Pressure Sensors Using Machine Learning","authors":"Hadi Najar","doi":"10.1109/TRANSDUCERS.2019.8808801","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2019.8808801","url":null,"abstract":"This paper reports a novel, rapid and economical approach to calibrate barometric micromechanical capacitive pressure sensors via electrical measurement only using a machine learning approach. Conventional calibration approaches that use physical means are time consuming and require specialized equipment. We proposed and experimentally validated an electrical only approach through machine learning to calibrate the pressure sensor over a wide range of pressures. Using this novel approach, the experimental results show an average absolute accuracy of 1.74hPa within 600hPa to 1100hPa pressure range. The typical absolute accuracy falls well within the ±1hPa. This approach reduces the test time by more than 85%.","PeriodicalId":6672,"journal":{"name":"2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)","volume":"43 1","pages":"1977-1980"},"PeriodicalIF":0.0,"publicationDate":"2019-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78657445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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