Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245776
Jing Chen, Lei Ding, Weipeng Ren, Tao Chen, Lichun Wang, Tao Zhao
Considering the requirements of Microsystems miniaturization integration for high-performance film-forming substrates, the key technologies of multilayer BCB/Cu thin film interconnection based on LTCC substrates and the related process controls were studied. A high reliability "T" interface interconnection method for thin film magnetron sputtering Cr/Cu/Cr and Cr/Pd/Au composite membrane structure and its preparation method were proposed. The effects of the interface defect and roughness of LTCC-thin film, the control of residual photoresist quantity in BCB film through holes and the stress of metallization of dielectric membrane on the quality of thick thin film composite substrate were studied. The prepared 12-layer thick thin film mixed substrate(10 layers LTCC substrate, 2 layers of thin film wiring) 60 pieces, all passed the GJB2438 C. 2.7 film substrate evaluation standard. Compared to the LTCC substrate, the wiring density is increased by 4 times, size reduced by 40 %.
{"title":"Research on BCB/Cu thin film multilayer interconnection technology based on LTCC substrate for Microsystem Integration","authors":"Jing Chen, Lei Ding, Weipeng Ren, Tao Chen, Lichun Wang, Tao Zhao","doi":"10.1109/ICEPT47577.2019.245776","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245776","url":null,"abstract":"Considering the requirements of Microsystems miniaturization integration for high-performance film-forming substrates, the key technologies of multilayer BCB/Cu thin film interconnection based on LTCC substrates and the related process controls were studied. A high reliability \"T\" interface interconnection method for thin film magnetron sputtering Cr/Cu/Cr and Cr/Pd/Au composite membrane structure and its preparation method were proposed. The effects of the interface defect and roughness of LTCC-thin film, the control of residual photoresist quantity in BCB film through holes and the stress of metallization of dielectric membrane on the quality of thick thin film composite substrate were studied. The prepared 12-layer thick thin film mixed substrate(10 layers LTCC substrate, 2 layers of thin film wiring) 60 pieces, all passed the GJB2438 C. 2.7 film substrate evaluation standard. Compared to the LTCC substrate, the wiring density is increased by 4 times, size reduced by 40 %.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"57 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73360941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245354
Wenwu Zhang, Yichen Cao, Lin Zhang, H. Ji, Mingyu Li
Cost-effective Cu nanoparticles (NPs) for flexible electronics at low temperature sintering and in atmosphere conditions is difficult in response to their poor antioxidation. In this paper, a novel Cu@Ag core-shell nanoparticle with high antioxidant and size controllable characteristic using chemical reduction method was synthesized, and the corresponding conductive pastes by low temperature sintering was successfully applied to flexible printed electronics. The distinct thicknesses of Ag shell with the different [Cu]/[Ag] molar ratios were obtained. In contrast to sintering of conductive thin film of different thicknesses of Ag shell at low temperature, it is obvious that thicker Ag shell was beneficial for sintering densification and enhancing antioxidant, the corresponding resistivity significantly declined from 34.85μΩ•cm to 15.31μΩ•cm at 240°C. Besides, this air stable Cu@Ag NPs with excellent oxidation resistance were saved beyond 30 days and hardly oxidized during the process of sintering below 270°C. Finally, the flexible conductive thin film exhibited good bending-resistance with different bending radius and cycles under low sintering temperature, which has a promising potential to be applied for flexible printed electronics.
{"title":"Enhanced antioxidant and size controllable Cu@Ag core-shell nanoparticles conductive inks for flexible printed electronics","authors":"Wenwu Zhang, Yichen Cao, Lin Zhang, H. Ji, Mingyu Li","doi":"10.1109/ICEPT47577.2019.245354","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245354","url":null,"abstract":"Cost-effective Cu nanoparticles (NPs) for flexible electronics at low temperature sintering and in atmosphere conditions is difficult in response to their poor antioxidation. In this paper, a novel Cu@Ag core-shell nanoparticle with high antioxidant and size controllable characteristic using chemical reduction method was synthesized, and the corresponding conductive pastes by low temperature sintering was successfully applied to flexible printed electronics. The distinct thicknesses of Ag shell with the different [Cu]/[Ag] molar ratios were obtained. In contrast to sintering of conductive thin film of different thicknesses of Ag shell at low temperature, it is obvious that thicker Ag shell was beneficial for sintering densification and enhancing antioxidant, the corresponding resistivity significantly declined from 34.85μΩ•cm to 15.31μΩ•cm at 240°C. Besides, this air stable Cu@Ag NPs with excellent oxidation resistance were saved beyond 30 days and hardly oxidized during the process of sintering below 270°C. Finally, the flexible conductive thin film exhibited good bending-resistance with different bending radius and cycles under low sintering temperature, which has a promising potential to be applied for flexible printed electronics.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"18 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75349981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245730
Xinru Li, Huiyu Yu, Zhenyu Wang
Compared with other heat dissipation systems, flat plate heat pipe (FPHP) can be manufactured in a thin plate shape, which is useful for microelectronics cooling system. Considering the SiC substrate has the same high thermal conductivity and the matched thermal expansion as the SiC-based devices, a SiC micropillar wick thin flat plate heat pipe (FPHP) architecture is proposed here for heat dissipation of SiC power devices. To compensate the requirements of bonding strength and etching uniformity, the hexagon micropillar wick architecture was fabricated inside the FPHPs. Meanwhile, the identical Si-Glass FPHPs were fabricated for comparison. The accurate and comprehensive analysis and comparison of SiC-Glass FPHP and Si-Glass FPHP were conducted utilizing the infrared (IR), Raman and high-speed camera equipment. During experiments, the maximum boiling zone of liquid inside SiC-Glass FPHP was much larger than that of Si one due to the specific heat capacity difference. The SiC-Glass FPHP CHF was close to 120 W/cm2, with a maximum 11 mm diameter boiling range. The Si-Glass one was only 55 W/cm2, with a maximum 6 mm diameter nucleate boiling range. Apparently, the SiC-Glass FPHP had a higher thermal dissipation efficiency than Si one.
{"title":"A SiC Based Integrated Micropillar Array Wick Thin Plate Heat Pipe Investigation","authors":"Xinru Li, Huiyu Yu, Zhenyu Wang","doi":"10.1109/ICEPT47577.2019.245730","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245730","url":null,"abstract":"Compared with other heat dissipation systems, flat plate heat pipe (FPHP) can be manufactured in a thin plate shape, which is useful for microelectronics cooling system. Considering the SiC substrate has the same high thermal conductivity and the matched thermal expansion as the SiC-based devices, a SiC micropillar wick thin flat plate heat pipe (FPHP) architecture is proposed here for heat dissipation of SiC power devices. To compensate the requirements of bonding strength and etching uniformity, the hexagon micropillar wick architecture was fabricated inside the FPHPs. Meanwhile, the identical Si-Glass FPHPs were fabricated for comparison. The accurate and comprehensive analysis and comparison of SiC-Glass FPHP and Si-Glass FPHP were conducted utilizing the infrared (IR), Raman and high-speed camera equipment. During experiments, the maximum boiling zone of liquid inside SiC-Glass FPHP was much larger than that of Si one due to the specific heat capacity difference. The SiC-Glass FPHP CHF was close to 120 W/cm2, with a maximum 11 mm diameter boiling range. The Si-Glass one was only 55 W/cm2, with a maximum 6 mm diameter nucleate boiling range. Apparently, the SiC-Glass FPHP had a higher thermal dissipation efficiency than Si one.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"60 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76590129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245264
Feng Han, Jingling Zou, Y. Ai, Chunlin Xu, Sheng Liu, Sheng Liu
In the advanced industrial manufacturing (3D printing), the assembly quality of parts has a tight relationship with the strength and the stiffness of products. Deep convolutional neural network for the image classification is an effective analysis approach for controlling the surface quality of parts and monitoring defects during this process. In this paper, a novel Artificial Intelligence (AI) method to classify and analyze numerous metal images during the manufacturing process is proposed. We exploit the visual-based feature classification method and deep convolutional neural network (DCNN) to analyze the quality of manufacturing parts, which is widely used in the defect detection for Additive Manufacturing. Two types of self-made industrial manufacturing datasets are collected, based on which we train the DCNN model to run the image classification tasks. Experiment results show that this method can achieve the state-of-art classification accuracy.
{"title":"Image classification and analysis during the additive manufacturing process based on deep convolutional neural networks","authors":"Feng Han, Jingling Zou, Y. Ai, Chunlin Xu, Sheng Liu, Sheng Liu","doi":"10.1109/ICEPT47577.2019.245264","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245264","url":null,"abstract":"In the advanced industrial manufacturing (3D printing), the assembly quality of parts has a tight relationship with the strength and the stiffness of products. Deep convolutional neural network for the image classification is an effective analysis approach for controlling the surface quality of parts and monitoring defects during this process. In this paper, a novel Artificial Intelligence (AI) method to classify and analyze numerous metal images during the manufacturing process is proposed. We exploit the visual-based feature classification method and deep convolutional neural network (DCNN) to analyze the quality of manufacturing parts, which is widely used in the defect detection for Additive Manufacturing. Two types of self-made industrial manufacturing datasets are collected, based on which we train the DCNN model to run the image classification tasks. Experiment results show that this method can achieve the state-of-art classification accuracy.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"10 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88601110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245198
Lei Jiu, Mingqiang Pan, Jun Sheng
Substrate heat dissipation is the main way of heat dissipation of LED chip, and improving its heat dissipation performance is the key to solving the heat dissipation of high-power LED. In this paper, 10-40μm oxide film was grown in situ on the surface of 2024 aluminum alloy as the insulating layer of insulating metal substrate (IMS) by micro-arc oxidation. 3W LED lamp beads are used as heat sources to be packaged on the traditional heat-dissipating substrate and micro-arc alumina substrate. The temperature difference and thermal resistance on both sides of the packaging substrate when the LED lamp works normally are measured by temperature measuring device. The heat dissipation performance of different packaging substrate and the heat conduction effect of micro-arc alumina substrate with oxide film thickness of 10-40μm are studied under the condition of satisfying the unity and standardization of the experimental conditions. Experiments show that:(1) Under the constant current of 600 mA, the temperature difference of the micro-arc alumina substrate is reduced by 511 °C compared with the conventional heat-dissipating substrate, and the thermal resistance of the substrate is reduced by 40%-60%; (2) The thermal resistance of the micro-arc alumina substrate decreases with the decrease of the thickness of the micro-arc oxide film layer. When the film layer is 10μm, the thermal resistance of the substrate is reduced by 10%-40% compared with other thicknesses.
{"title":"Study on Thermal Conductivity of Micro-arc Alumina Substrate for High Power LED","authors":"Lei Jiu, Mingqiang Pan, Jun Sheng","doi":"10.1109/ICEPT47577.2019.245198","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245198","url":null,"abstract":"Substrate heat dissipation is the main way of heat dissipation of LED chip, and improving its heat dissipation performance is the key to solving the heat dissipation of high-power LED. In this paper, 10-40μm oxide film was grown in situ on the surface of 2024 aluminum alloy as the insulating layer of insulating metal substrate (IMS) by micro-arc oxidation. 3W LED lamp beads are used as heat sources to be packaged on the traditional heat-dissipating substrate and micro-arc alumina substrate. The temperature difference and thermal resistance on both sides of the packaging substrate when the LED lamp works normally are measured by temperature measuring device. The heat dissipation performance of different packaging substrate and the heat conduction effect of micro-arc alumina substrate with oxide film thickness of 10-40μm are studied under the condition of satisfying the unity and standardization of the experimental conditions. Experiments show that:(1) Under the constant current of 600 mA, the temperature difference of the micro-arc alumina substrate is reduced by 511 °C compared with the conventional heat-dissipating substrate, and the thermal resistance of the substrate is reduced by 40%-60%; (2) The thermal resistance of the micro-arc alumina substrate decreases with the decrease of the thickness of the micro-arc oxide film layer. When the film layer is 10μm, the thermal resistance of the substrate is reduced by 10%-40% compared with other thicknesses.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"31 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73561163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245190
E. Yang, R. Qian, Alex Yao, Yong Liu
In this paper, a 3D finite element analysis (FEA) model is developed to simulate the process of inserting the press-fit pin in PCB board. In the package assembly process, the bottom of pin base is attached on DBC by laser soldering process. In the process of inserting press-fit pin in PCB board, the pin base will support the pin pillar and push pin head into the hole of PCB board. Contact pairs between pin bottom and pin pillar, between pin head and PCB hole, between pin side and hole of module case, between pin pillar and DBC top are defined. The risk of laser tooling displacement and pin tilt are studied through simulation. The impact of PCB offset on the two failure modes is also studied. The simulation results agreed with the actual test trends.
{"title":"The Process Parameter Simulation of Press-fit Pin in a Power Module","authors":"E. Yang, R. Qian, Alex Yao, Yong Liu","doi":"10.1109/ICEPT47577.2019.245190","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245190","url":null,"abstract":"In this paper, a 3D finite element analysis (FEA) model is developed to simulate the process of inserting the press-fit pin in PCB board. In the package assembly process, the bottom of pin base is attached on DBC by laser soldering process. In the process of inserting press-fit pin in PCB board, the pin base will support the pin pillar and push pin head into the hole of PCB board. Contact pairs between pin bottom and pin pillar, between pin head and PCB hole, between pin side and hole of module case, between pin pillar and DBC top are defined. The risk of laser tooling displacement and pin tilt are studied through simulation. The impact of PCB offset on the two failure modes is also studied. The simulation results agreed with the actual test trends.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"31 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90769403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245182
Z. Qu, Huiru Yang, Jihe Du, Pan Gao, Zeheng Zhao, H. Ye, Guoqi Zhang
In this work, we adopted the method of doping Nb element to improve the photo response of MoS2. The experiment results show the responsivity of the Nb-doped MoS2 sample is improved under red and purple light. When the wavelength is 650 nm and the bias voltage is 10 V, the photo responsivity of Nb-doped MoS2 sample is 65 mA/W, while that of the MoS2 sample is 0.05 mA/W. And this result can be explained by the higher absorbance of Nb-doped MoS2 than pure MoS2 calculated by first principles based on density functional theory. Besides, an interesting phenomenon has been discovered that at a voltage of less than 1V, the optical response of Nb-doped MoS2 is completely opposite.
{"title":"Study on photoelectrical properties of Nb-MoS2, theoretically and experimentally","authors":"Z. Qu, Huiru Yang, Jihe Du, Pan Gao, Zeheng Zhao, H. Ye, Guoqi Zhang","doi":"10.1109/ICEPT47577.2019.245182","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245182","url":null,"abstract":"In this work, we adopted the method of doping Nb element to improve the photo response of MoS<inf>2</inf>. The experiment results show the responsivity of the Nb-doped MoS<inf>2</inf> sample is improved under red and purple light. When the wavelength is 650 nm and the bias voltage is 10 V, the photo responsivity of Nb-doped MoS<inf>2</inf> sample is 65 mA/W, while that of the MoS<inf>2</inf> sample is 0.05 mA/W. And this result can be explained by the higher absorbance of Nb-doped MoS<inf>2</inf> than pure MoS<inf>2</inf> calculated by first principles based on density functional theory. Besides, an interesting phenomenon has been discovered that at a voltage of less than 1V, the optical response of Nb-doped MoS<inf>2</inf> is completely opposite.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"20 6 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90783897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245201
Jianqiang Li, L. Ji, Wenhe Wang, Z. Pang, Haifeng Zhang, Dongmei Liu
This paper present the industrial case study on quality improvement of the post reflow cleaning process in an assembly industry. Ceramic carrier boards are widely used in industrial fields due to their good thermal conductivity, strength and insulation. In order to reduce the terminal volume, flexible plates are also widely used. For the high quality industry application, a number of manufacturing related issues needed to be addressed. Of all Potential defects, the PCBA pollution is most critical defect which will affect the long term reliability. The ceramic board and FPC was assembly with Sn96.5Ag3Cu0.5 solder paste an orthogonal experimental design was conducted to understand the relationship among the washing temperature, washing solution and the cleanness level. From the experiment we got the optimal post-reflow process conditions for achieving highest quality cleaning status, which meet the requirements of IPC standard.
{"title":"Study on High Density Fine pitch PCBA Cleaning Process Optimization Based on Ceramic Board and Flexible Plate","authors":"Jianqiang Li, L. Ji, Wenhe Wang, Z. Pang, Haifeng Zhang, Dongmei Liu","doi":"10.1109/ICEPT47577.2019.245201","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245201","url":null,"abstract":"This paper present the industrial case study on quality improvement of the post reflow cleaning process in an assembly industry. Ceramic carrier boards are widely used in industrial fields due to their good thermal conductivity, strength and insulation. In order to reduce the terminal volume, flexible plates are also widely used. For the high quality industry application, a number of manufacturing related issues needed to be addressed. Of all Potential defects, the PCBA pollution is most critical defect which will affect the long term reliability. The ceramic board and FPC was assembly with Sn96.5Ag3Cu0.5 solder paste an orthogonal experimental design was conducted to understand the relationship among the washing temperature, washing solution and the cleanness level. From the experiment we got the optimal post-reflow process conditions for achieving highest quality cleaning status, which meet the requirements of IPC standard.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"242 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78520139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245215
Tao Sun, Min-bo Zhou, Ze-Jun Zhang, Xin-Ping Zhang
ZnO has been widely used in electronic industries as semiconductor and photovoltaic materials. In this study, directly soldering ZnO thin film (ZnO-TF) coated on solar glass was achieved with ultrasound-assisted soldering iron using Sn3.5Ag4Ti(Ce, Ga) active solder at 250 °C in air. Results show that the active solder can rapidly wet and spread on ZnO-TF with ultrasonic assistance. No distinct intermetallic compound layer can be detected at the interface. With certain ultrasonic parameters, the average shear strength of solder/film joints reaches 23.9 MPa. Shear fracture occurs at the interface of joints and partial solder remains on the surface of the ZnO-TF, meaning that there is a firm bonding between the active solder and the ZnO-TF. Element analysis on fracture surfaces reveals that Ti content in the remnant solder on the ZnO-TF is higher than that in the solder matrix. Combined analyses based on adhesion theory and thermodynamic calculation manifest that Ti tends to adsorb at the ZnO film and the redox reaction between Ti and ZnO takes place during ultrasound-assisted soldering process.
{"title":"Ultrasound-assisted soldering process performance of Sn-Ag-Ti(Ce, Ga) active solders on thin film ZnO substrate","authors":"Tao Sun, Min-bo Zhou, Ze-Jun Zhang, Xin-Ping Zhang","doi":"10.1109/ICEPT47577.2019.245215","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245215","url":null,"abstract":"ZnO has been widely used in electronic industries as semiconductor and photovoltaic materials. In this study, directly soldering ZnO thin film (ZnO-TF) coated on solar glass was achieved with ultrasound-assisted soldering iron using Sn3.5Ag4Ti(Ce, Ga) active solder at 250 °C in air. Results show that the active solder can rapidly wet and spread on ZnO-TF with ultrasonic assistance. No distinct intermetallic compound layer can be detected at the interface. With certain ultrasonic parameters, the average shear strength of solder/film joints reaches 23.9 MPa. Shear fracture occurs at the interface of joints and partial solder remains on the surface of the ZnO-TF, meaning that there is a firm bonding between the active solder and the ZnO-TF. Element analysis on fracture surfaces reveals that Ti content in the remnant solder on the ZnO-TF is higher than that in the solder matrix. Combined analyses based on adhesion theory and thermodynamic calculation manifest that Ti tends to adsorb at the ZnO film and the redox reaction between Ti and ZnO takes place during ultrasound-assisted soldering process.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"2 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72928922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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