Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245157
Zhixiong Li, Fengman Liu, Yu Sun, Huimin He, H. Xue, Juan Wei
This paper propose electric-optical modulator model and establish a simulation link. Combined with the simulation link at 25 Gbps transmission rate, the extinction ratio(ER), optical modulation amplitude(OMA) and bit error rate(BER) of the modulator are studied when the arm length of the modulator is between 1mm and 3mm, and the peak-to-peak voltage (VPP) of the input electrical signal is 2-3v, and the input optical power varies from 5 to10mw. The result are as follow : In order to obtain a larger extinction ratio, it tends to increase the length of both arms of the modulator or the VPP of the input electrical signal when other condition are the same, but the ER is insensitive to changes in input optical intensity; When the length of the modulation arm is changed from 1 to 3mm, the OMA increases first and then decreases, and the BER changes inversely. Therefore, the maximum OMA and the lowest BER can be obtained by optimizing the arm length of the modulator; the BER of the modulator decreases as the input optical intensity and the VPP increases.
{"title":"Study on Characteristics of Mach-Zehnder Electro-Optical Modulator","authors":"Zhixiong Li, Fengman Liu, Yu Sun, Huimin He, H. Xue, Juan Wei","doi":"10.1109/ICEPT47577.2019.245157","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245157","url":null,"abstract":"This paper propose electric-optical modulator model and establish a simulation link. Combined with the simulation link at 25 Gbps transmission rate, the extinction ratio(ER), optical modulation amplitude(OMA) and bit error rate(BER) of the modulator are studied when the arm length of the modulator is between 1mm and 3mm, and the peak-to-peak voltage (VPP) of the input electrical signal is 2-3v, and the input optical power varies from 5 to10mw. The result are as follow : In order to obtain a larger extinction ratio, it tends to increase the length of both arms of the modulator or the VPP of the input electrical signal when other condition are the same, but the ER is insensitive to changes in input optical intensity; When the length of the modulation arm is changed from 1 to 3mm, the OMA increases first and then decreases, and the BER changes inversely. Therefore, the maximum OMA and the lowest BER can be obtained by optimizing the arm length of the modulator; the BER of the modulator decreases as the input optical intensity and the VPP increases.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"19 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89096498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245333
H. Fan, Hugo Wong, F. Wong, Kai Zhang, Haibin Chen
The design of packages with high performance while maintaining the highest possible reliability is a challenge. To design reliable packages, understanding all possible failure modes as possible is becoming a key. Delamination is still a potential concern on product reliability, especially delamination at leadframe and epoxy mould compound (EMC) interface. A good understanding of factor effect on delamination factors will help to drive improvements on design and process optimization to minimize delamination concern. In this study, simulations are conducted to investigate effects of V-groove angle, depth and location on delamination propagation at the leadframe (LF)/EMC interface, indicating that smaller V-groove angle together with deeper V-groove and V- groove located far away from body edge can help reduce risk of delamination propagation. However it can also trigger other concerns, like crack near V-groove tip and difficulty in leadframe manufacturing. Therefore, V-groove design has to be optimized to achieve delamination requirement, and also fulfill process specification in the assembly line and capability of leadframe suppliers. This study demonstrates simulation driven development on delamination improvement.
{"title":"Study of V-groove on Leadframe/Epoxy Mold Compound Delamination Improvement","authors":"H. Fan, Hugo Wong, F. Wong, Kai Zhang, Haibin Chen","doi":"10.1109/ICEPT47577.2019.245333","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245333","url":null,"abstract":"The design of packages with high performance while maintaining the highest possible reliability is a challenge. To design reliable packages, understanding all possible failure modes as possible is becoming a key. Delamination is still a potential concern on product reliability, especially delamination at leadframe and epoxy mould compound (EMC) interface. A good understanding of factor effect on delamination factors will help to drive improvements on design and process optimization to minimize delamination concern. In this study, simulations are conducted to investigate effects of V-groove angle, depth and location on delamination propagation at the leadframe (LF)/EMC interface, indicating that smaller V-groove angle together with deeper V-groove and V- groove located far away from body edge can help reduce risk of delamination propagation. However it can also trigger other concerns, like crack near V-groove tip and difficulty in leadframe manufacturing. Therefore, V-groove design has to be optimized to achieve delamination requirement, and also fulfill process specification in the assembly line and capability of leadframe suppliers. This study demonstrates simulation driven development on delamination improvement.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"11 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88455325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The degradation characteristics and life prediction of the typical PCB Pad/solder pastes combinations including the ENIG PCB pad /lead-free BGA SAC305 ball with lead-free process, the Sn-HASL PCB pad/lead-free BGA SAC305 ball with backward compatible mixing process and the Sn-HASL PCB pad/lead-tin BGA 63SnPb ball with lead-tin process were investigated and compared based on the accelerated life experiments. The data of thermal cycle to failure was processed and it was confirmed that the thermal cycle to failure of the investigated three type solder joints all could be fitted by Weibull distribution law.
{"title":"Thermal Fitigure Life Prediction on PBGA Solder Joints of Typical Pad Finish/Solder Combination","authors":"Hongqin Wang, Qingqiu Gong, Dawei Wang, Wei Li, Ziqiang Xu, Jinbao Cai","doi":"10.1109/ICEPT47577.2019.245204","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245204","url":null,"abstract":"The degradation characteristics and life prediction of the typical PCB Pad/solder pastes combinations including the ENIG PCB pad /lead-free BGA SAC305 ball with lead-free process, the Sn-HASL PCB pad/lead-free BGA SAC305 ball with backward compatible mixing process and the Sn-HASL PCB pad/lead-tin BGA 63SnPb ball with lead-tin process were investigated and compared based on the accelerated life experiments. The data of thermal cycle to failure was processed and it was confirmed that the thermal cycle to failure of the investigated three type solder joints all could be fitted by Weibull distribution law.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"1 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90154220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245288
Huanxiang Xu, Yanhuang Tang, Jingxi Wu, B. Peng, Zijun Chen, Zilian Liu
Light emitting diodes (LEDs) are increasingly widely used as a new generation of environmentally friendly green light source. However, during the use of LED especially white LED, due to the action of light, heat, etc., the failure phenomenon of cracking of the LED encapsulation adhesive is likely to occur, which will adversely affect the light efficiency and color temperature of LED and even dead lights. In this paper, through analyzing the cases of LED encapsulation adhesive cracking it is concluded that there are two main reasons for LED encapsulation adhesive cracking. One is that the LED lamp beads are affected by light and heat for a long time, which makes the encapsulation adhesive aging and hardening, leading to the cracking of the encapsulation adhesive. The other is due to the thermal mismatch between the encapsulation adhesive and the plastic part of lead frame, which causes the encapsulation adhesive to crack during the process of thermal expansion.
{"title":"The Study on Cracking Reasons of LED Encapsulation Silicone","authors":"Huanxiang Xu, Yanhuang Tang, Jingxi Wu, B. Peng, Zijun Chen, Zilian Liu","doi":"10.1109/ICEPT47577.2019.245288","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245288","url":null,"abstract":"Light emitting diodes (LEDs) are increasingly widely used as a new generation of environmentally friendly green light source. However, during the use of LED especially white LED, due to the action of light, heat, etc., the failure phenomenon of cracking of the LED encapsulation adhesive is likely to occur, which will adversely affect the light efficiency and color temperature of LED and even dead lights. In this paper, through analyzing the cases of LED encapsulation adhesive cracking it is concluded that there are two main reasons for LED encapsulation adhesive cracking. One is that the LED lamp beads are affected by light and heat for a long time, which makes the encapsulation adhesive aging and hardening, leading to the cracking of the encapsulation adhesive. The other is due to the thermal mismatch between the encapsulation adhesive and the plastic part of lead frame, which causes the encapsulation adhesive to crack during the process of thermal expansion.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"10 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90170738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245805
Wang Wangbo, Wenhao Shu, Huaying Hu, Jianhua Zhang, Lianqiao Yang
A highly sensitive, stable electrochemical acetylcholinesterase biosensor with silver-graphene modified was fabricated to detect organophosphorus pesticides, dichlorvos. Complete production and test process were characterized by scanning electron microscopy, cyclic voltammetry, differential pulse voltammetry. The electrochemical signal of biosensor got to be well amplified because of the modification of silver-graphene. The better detection performance was got, compared with the sensors that lack or no modified. Moreover, TiO2 sol-gel and high viscous chitosan were used as a highly efficient immobilization matrix for immobilizing acetylcholinesterase. The detection linear range of the biosensor to dichlorvos, a model organophosphorus pesticides compound, was from 0.036 μM (7.9 ppb) to 22.6 μM, with a limit of detection of 7.4 nM (1.6 ppb). The biosensor was highly reproducible and stable in detection and storage.
{"title":"A silver-graphene modified acetylcholinesterase biosensor for detecting organophosphate pesticides","authors":"Wang Wangbo, Wenhao Shu, Huaying Hu, Jianhua Zhang, Lianqiao Yang","doi":"10.1109/ICEPT47577.2019.245805","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245805","url":null,"abstract":"A highly sensitive, stable electrochemical acetylcholinesterase biosensor with silver-graphene modified was fabricated to detect organophosphorus pesticides, dichlorvos. Complete production and test process were characterized by scanning electron microscopy, cyclic voltammetry, differential pulse voltammetry. The electrochemical signal of biosensor got to be well amplified because of the modification of silver-graphene. The better detection performance was got, compared with the sensors that lack or no modified. Moreover, TiO2 sol-gel and high viscous chitosan were used as a highly efficient immobilization matrix for immobilizing acetylcholinesterase. The detection linear range of the biosensor to dichlorvos, a model organophosphorus pesticides compound, was from 0.036 μM (7.9 ppb) to 22.6 μM, with a limit of detection of 7.4 nM (1.6 ppb). The biosensor was highly reproducible and stable in detection and storage.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"61 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90223020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245312
J. Jin, R. Ren, H. Gou
Multi-chip modules contain a large number of bare chips, which are sensitive to moisture in the packaging atmosphere. In order to ensure the long-term reliability of this kind of modules, it is necessary to seal the module package. Low-frequency connector is an indispensable part of multi-chip module, which is used to transmit internal and external electrical signals of modules. During the screening test, the phenomenon of unqualified hermeticity of some sealed modules appeared. Modules exhibit a leak rate greater than 1.0×10-3 Pa•m3/s during the tracer gas helium (He) fine leak test. Further inspection of the low-frequency connector body reveals that there are slender cracks in the connector glass body. The analysis shows that the reason of glass cracking is the thermal stress level of the module during welding heating exceeds the tensile strength of the glass, which leads to failure. Temperature difference exists in different positions of the connector during laser welding of cover plate, and cannot be eliminated by welding process optimization. After eliminating the internal defects of the glass body, the problem of glass body cracking did not occur in the process of multi-round step-by-step screening test, and the sealing test of module products was qualified after each test.
{"title":"Analysis and Solution of Glass Cracking of Low Frequency Connector in Multi-Chip Module","authors":"J. Jin, R. Ren, H. Gou","doi":"10.1109/ICEPT47577.2019.245312","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245312","url":null,"abstract":"Multi-chip modules contain a large number of bare chips, which are sensitive to moisture in the packaging atmosphere. In order to ensure the long-term reliability of this kind of modules, it is necessary to seal the module package. Low-frequency connector is an indispensable part of multi-chip module, which is used to transmit internal and external electrical signals of modules. During the screening test, the phenomenon of unqualified hermeticity of some sealed modules appeared. Modules exhibit a leak rate greater than 1.0×10-3 Pa•m3/s during the tracer gas helium (He) fine leak test. Further inspection of the low-frequency connector body reveals that there are slender cracks in the connector glass body. The analysis shows that the reason of glass cracking is the thermal stress level of the module during welding heating exceeds the tensile strength of the glass, which leads to failure. Temperature difference exists in different positions of the connector during laser welding of cover plate, and cannot be eliminated by welding process optimization. After eliminating the internal defects of the glass body, the problem of glass body cracking did not occur in the process of multi-round step-by-step screening test, and the sealing test of module products was qualified after each test.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"24 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80931285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245754
Mengya Dong, Yang Liu, Lishuang Xiong, Ming Li
The preparation of polymer films on silicon (Si) is one of the key technologies for microelectronics, especially in 3D package. In this work, water-phase grafting is a novel technology for grafting polymer film in the solution using water as solvent. Poly(methacrylimide) (PMI) and poly(methylacrylic acid) (PMAA) initiated by 4-Nitrobenzene diazonium (NBD) tetrafluoroborate were radical grafted on 4-inch silicon wafer. With the help of SEM, ellipsometry, XPS and AFM, the surface morphology, properties of PMI and PMAA organic grafted films was firstly researched. After heat treatment (HT) of 50 °C or 200 °C, PMI and PMAA films had low dielectric constant, low dielectric dissipation factor and strong corrosion resistance. This is of great significance for the large-scale application of Water-phase grafted organic films.
{"title":"Reliability of Ultrathin Organic Insulating Films for 3D Package","authors":"Mengya Dong, Yang Liu, Lishuang Xiong, Ming Li","doi":"10.1109/ICEPT47577.2019.245754","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245754","url":null,"abstract":"The preparation of polymer films on silicon (Si) is one of the key technologies for microelectronics, especially in 3D package. In this work, water-phase grafting is a novel technology for grafting polymer film in the solution using water as solvent. Poly(methacrylimide) (PMI) and poly(methylacrylic acid) (PMAA) initiated by 4-Nitrobenzene diazonium (NBD) tetrafluoroborate were radical grafted on 4-inch silicon wafer. With the help of SEM, ellipsometry, XPS and AFM, the surface morphology, properties of PMI and PMAA organic grafted films was firstly researched. After heat treatment (HT) of 50 °C or 200 °C, PMI and PMAA films had low dielectric constant, low dielectric dissipation factor and strong corrosion resistance. This is of great significance for the large-scale application of Water-phase grafted organic films.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"61 6 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79581243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245229
W. Yilong, Wen Zehai, Zhang Pingsheng, Pan Yuhua, LU Qian, Liu Yangyang
Bonding wedges are one of the most important tools in wire bonding process. The performance of bonding wedge determines the flexibility, reliability, cost of bonding process. The degradation of bonding wedges occurs frequently during bonding process which results in bonding failure and reliability problems. In this paper, common bonding tools were introduced. The degradation phenomenon of bonding wedges were studied using repeated experiments. The resultant on wedge tip induced degradation was analyzed. A cleaning tool tray and an ultrasonic cleaning method using sodium hydroxide were proposed to remove the resultant. The results showed that the degradation without obvious wear on wedge tip was caused by the resultant containing additional silicon which came from gold wire. By using cleaning process when degradation occurred due to resultant, the wedge could work properly until wear by nature.
{"title":"Study on the degradation of wire bonding wedges and a proposed method for the prolongation of wedge service life","authors":"W. Yilong, Wen Zehai, Zhang Pingsheng, Pan Yuhua, LU Qian, Liu Yangyang","doi":"10.1109/ICEPT47577.2019.245229","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245229","url":null,"abstract":"Bonding wedges are one of the most important tools in wire bonding process. The performance of bonding wedge determines the flexibility, reliability, cost of bonding process. The degradation of bonding wedges occurs frequently during bonding process which results in bonding failure and reliability problems. In this paper, common bonding tools were introduced. The degradation phenomenon of bonding wedges were studied using repeated experiments. The resultant on wedge tip induced degradation was analyzed. A cleaning tool tray and an ultrasonic cleaning method using sodium hydroxide were proposed to remove the resultant. The results showed that the degradation without obvious wear on wedge tip was caused by the resultant containing additional silicon which came from gold wire. By using cleaning process when degradation occurred due to resultant, the wedge could work properly until wear by nature.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"110 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79621184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245222
Huan He, Shang-yu Huang, Yong Xiao
Ni-foam reinforced pure Sn composite solder was used to solder copper at low temperature in this study. The microstructure and mechanical properties of Cu/Ni-Sn/Cu joints were investigated in terms of the bonding time. Results showed that the intermetallic compounds formed in the Cu/Sn/Ni system were sensitive to the bonding time, and the existence of Ni-foam refined the grain size of (Cu,Ni)6Sn5 phase and improved the strength of joints. The joints bonded for 60 min exhibited the highest shear strength of 52.7 MPa, and the shearing failure mainly occurred in the (Cu,Ni)6Sn5 phase. The (Cu,Ni)6Sn5 grain refinement and Ni skeletons reinforcement enhanced the shear strength, but the excessive growth of Cu3Sn layer caused elastic modulus mismatch and strength decrease of joint.
{"title":"Microstructure evolution and mechanical properties of Cu interconnects bonded with Ni-foam reinforced pure Sn solder","authors":"Huan He, Shang-yu Huang, Yong Xiao","doi":"10.1109/ICEPT47577.2019.245222","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245222","url":null,"abstract":"Ni-foam reinforced pure Sn composite solder was used to solder copper at low temperature in this study. The microstructure and mechanical properties of Cu/Ni-Sn/Cu joints were investigated in terms of the bonding time. Results showed that the intermetallic compounds formed in the Cu/Sn/Ni system were sensitive to the bonding time, and the existence of Ni-foam refined the grain size of (Cu,Ni)6Sn5 phase and improved the strength of joints. The joints bonded for 60 min exhibited the highest shear strength of 52.7 MPa, and the shearing failure mainly occurred in the (Cu,Ni)6Sn5 phase. The (Cu,Ni)6Sn5 grain refinement and Ni skeletons reinforcement enhanced the shear strength, but the excessive growth of Cu3Sn layer caused elastic modulus mismatch and strength decrease of joint.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"66 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77960601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/ICEPT47577.2019.245133
Weikang Wan, Qidong Wang, Tianchun Ye
A new AMC based broadband low-profile antenna is presented. The proposed antenna is composed by a patch, finite AMC cells and a slotted ground plane, and fed by a microstrip line under the ground plane. The structure of the proposed antenna is simple and compact, which can be realized by a three-layer printed circuit board (PCB) substrate. To verify the performance of the new AMC antenna, a reference patch antenna with the same thickness and feeding method is used for comparison. The new AMC antenna realizes a wide impedance bandwidth of 23% and a high gain up to 8.75dBi with an overall size of 1λ0×1λ0×0.047λ0 (λ0 is the free space wavelength at 28GHz). In addition, it solves the inherent disadvantage of backward radiation induced by aperture coupling while utilizes the advantage of low cross polarization property. The good performance suggests that the proposed novel AMC antenna is fully capable for 5G mm-wave AiP application.
{"title":"Research of Low-profile High Performance new AMC Antenna for 5G mm-Wave AiP Application","authors":"Weikang Wan, Qidong Wang, Tianchun Ye","doi":"10.1109/ICEPT47577.2019.245133","DOIUrl":"https://doi.org/10.1109/ICEPT47577.2019.245133","url":null,"abstract":"A new AMC based broadband low-profile antenna is presented. The proposed antenna is composed by a patch, finite AMC cells and a slotted ground plane, and fed by a microstrip line under the ground plane. The structure of the proposed antenna is simple and compact, which can be realized by a three-layer printed circuit board (PCB) substrate. To verify the performance of the new AMC antenna, a reference patch antenna with the same thickness and feeding method is used for comparison. The new AMC antenna realizes a wide impedance bandwidth of 23% and a high gain up to 8.75dBi with an overall size of 1λ0×1λ0×0.047λ0 (λ0 is the free space wavelength at 28GHz). In addition, it solves the inherent disadvantage of backward radiation induced by aperture coupling while utilizes the advantage of low cross polarization property. The good performance suggests that the proposed novel AMC antenna is fully capable for 5G mm-wave AiP application.","PeriodicalId":6676,"journal":{"name":"2019 20th International Conference on Electronic Packaging Technology(ICEPT)","volume":"39 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75698636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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