Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870498
Saehoon Joung, Soyoung Kim
Altering from existing planar devices to FinFETs has revolutionized device performance, but demands of leakage and gate controllability are increasing relentlessly. Gate all around field effect transistor (GAAFET) is expected to be the next-generation device that meets these needs. This paper suggests a way to improve the gate electrostatic characteristics by adding an oxidation process to the conventional multi-bridge-channel field effect transistor (MBCFET) process. The main advantage of the proposed method is that a device with ultimate electrostatic properties can be implemented without changing the complex and expensive photo-patterning. In the proposed device, the immunity of short channel effects is enhanced in a single transistor. And the performance of ring oscillator (RO) and SRAM was confirmed to be improved by Sentaurus technology computer aided design (TCAD) mixed-mode simulation.
{"title":"Leakage Performance Improvement in Multi-Bridge-Channel Field Effect Transistor (MBCFET) by Adding Core Insulator Layer","authors":"Saehoon Joung, Soyoung Kim","doi":"10.1109/SISPAD.2019.8870498","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870498","url":null,"abstract":"Altering from existing planar devices to FinFETs has revolutionized device performance, but demands of leakage and gate controllability are increasing relentlessly. Gate all around field effect transistor (GAAFET) is expected to be the next-generation device that meets these needs. This paper suggests a way to improve the gate electrostatic characteristics by adding an oxidation process to the conventional multi-bridge-channel field effect transistor (MBCFET) process. The main advantage of the proposed method is that a device with ultimate electrostatic properties can be implemented without changing the complex and expensive photo-patterning. In the proposed device, the immunity of short channel effects is enhanced in a single transistor. And the performance of ring oscillator (RO) and SRAM was confirmed to be improved by Sentaurus technology computer aided design (TCAD) mixed-mode simulation.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"78 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78213579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870401
C. Jungemann, Tobias Linn, Z. Kargar
Modeling of plasma waves in HEMTs by momentsbased transport models is investigated. The balance equations are derived from the Boltzmann transport equation by projection onto Hermitian polynomials. The discretized equations are stabilized by an approach based on matrix exponentials, which in the case of the drift-diffusion model reproduces the Scharfetter-Gummel stabilization. Simulations of a realistic HEMT show that plasma instabilities are rather unlikely to occur and that effects not considered by Dyakonov and Shur (e.g. real ohmic contacts) strongly damp the THz waves. Furthermore, quasi-ballistic transport can not be captured by higher-order models.
{"title":"On the Simulation of Plasma Waves in HEMTs and the Dyakonov-Shur Instability","authors":"C. Jungemann, Tobias Linn, Z. Kargar","doi":"10.1109/SISPAD.2019.8870401","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870401","url":null,"abstract":"Modeling of plasma waves in HEMTs by momentsbased transport models is investigated. The balance equations are derived from the Boltzmann transport equation by projection onto Hermitian polynomials. The discretized equations are stabilized by an approach based on matrix exponentials, which in the case of the drift-diffusion model reproduces the Scharfetter-Gummel stabilization. Simulations of a realistic HEMT show that plasma instabilities are rather unlikely to occur and that effects not considered by Dyakonov and Shur (e.g. real ohmic contacts) strongly damp the THz waves. Furthermore, quasi-ballistic transport can not be captured by higher-order models.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"31 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82569373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870513
N. Speciale, Rossella Brunettil, M. Rudan
Some classes of differential equations are amenable to a numerical solution based on the Numerov process (NP), whose accuracy can be up to two orders of magnitude superior with respect to the standard finite-difference or box-integration methods, with a negligible increase in the computational cost. The paper shows that the equations describing charge transport in solid-state devices can suitably be manipulated to make the application of NP possible. Also, thanks to a specifically-tailored algebraic solver, the 1D Poisson equation is fully decoupled from the transport equation, this reducing the procedure to the solution of a single non-linear equation. The example of an Ovonic device is considered, used as selector in phase-change memory applications.
{"title":"Extending the Numerov Process to the Semiconductor Transport Equations","authors":"N. Speciale, Rossella Brunettil, M. Rudan","doi":"10.1109/SISPAD.2019.8870513","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870513","url":null,"abstract":"Some classes of differential equations are amenable to a numerical solution based on the Numerov process (NP), whose accuracy can be up to two orders of magnitude superior with respect to the standard finite-difference or box-integration methods, with a negligible increase in the computational cost. The paper shows that the equations describing charge transport in solid-state devices can suitably be manipulated to make the application of NP possible. Also, thanks to a specifically-tailored algebraic solver, the 1D Poisson equation is fully decoupled from the transport equation, this reducing the procedure to the solution of a single non-linear equation. The example of an Ovonic device is considered, used as selector in phase-change memory applications.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1B 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87103459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870410
A. Pal, Sushant Mittal, E. Bazizi, A. Sachid, Mehdi Saremi, B. Colombeau, G. Thareja, Samuel Lin, B. Alexander, S. Natarajan, B. Ayyagari
Impact of air-spacer at MOL and BEOL on circuit performance at 3nm technology node is studied. Our modeling results show that by introducing air-spacer at MOL and BEOL, parasitic capacitance can be reduced by 18% and circuit performance as simulated on a 31-stage ring oscillator can be improved by 6%. Other advanced parasitic improvement technologies, such as Ruthenium, also show similar performance improvement. Finally, we show that best circuit performance is achieved when these 2 technologies are combined, yielding to a circuit performance boost of 16%.
{"title":"Impact of MOL/BEOL Air-Spacer on Parasitic Capacitance and Circuit Performance at 3 nm Node","authors":"A. Pal, Sushant Mittal, E. Bazizi, A. Sachid, Mehdi Saremi, B. Colombeau, G. Thareja, Samuel Lin, B. Alexander, S. Natarajan, B. Ayyagari","doi":"10.1109/SISPAD.2019.8870410","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870410","url":null,"abstract":"Impact of air-spacer at MOL and BEOL on circuit performance at 3nm technology node is studied. Our modeling results show that by introducing air-spacer at MOL and BEOL, parasitic capacitance can be reduced by 18% and circuit performance as simulated on a 31-stage ring oscillator can be improved by 6%. Other advanced parasitic improvement technologies, such as Ruthenium, also show similar performance improvement. Finally, we show that best circuit performance is achieved when these 2 technologies are combined, yielding to a circuit performance boost of 16%.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"49 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88606958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870417
K. Reiser, J. Twynam, C. Eckl, H. Brech, R. Weigel
The influence of an accurate electron velocity-field relationship modelling on pulsed IV and small-signal RF characteristics in GaN-on-Si HEMTs is discussed and compared to measurements. We show by technology computer-aided design (TCAD) simulation and measurements that not only the lowfield mobility and saturation velocity are of great importance, but also the transition behaviour in between has to be modelled accurately. Experimentally, we extract the velocity-field relationship using device simulation and measured data with ultra short pulse lengths. To the best of our knowledge, this is the first study on the velocity-field relationship in GaN-on-Si devices.
{"title":"Influence of Accurate Electron Drift Velocity Modelling on the Electrical Characteristics in GaN-on-Si HEMTs","authors":"K. Reiser, J. Twynam, C. Eckl, H. Brech, R. Weigel","doi":"10.1109/SISPAD.2019.8870417","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870417","url":null,"abstract":"The influence of an accurate electron velocity-field relationship modelling on pulsed IV and small-signal RF characteristics in GaN-on-Si HEMTs is discussed and compared to measurements. We show by technology computer-aided design (TCAD) simulation and measurements that not only the lowfield mobility and saturation velocity are of great importance, but also the transition behaviour in between has to be modelled accurately. Experimentally, we extract the velocity-field relationship using device simulation and measured data with ultra short pulse lengths. To the best of our knowledge, this is the first study on the velocity-field relationship in GaN-on-Si devices.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90807170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870467
Y. S. Bankapalli, H. Wong
In this paper, we show the possibility of using Technology Computer Aided Design (TCAD) to assist machine learning for semiconductor device failure trouble shooting and device reverse engineering. When TCAD simulation models and parameters are properly chosen and calibrated, large number of devices with random defects and structural characteristics can be generated and simulated. The results can then be used to train machine learning algorithms to predict the defect and structural characteristics of a device with given electrical characteristics (such as IV’s and CV’s). 1D PIN diode with various layer thicknesses and doping concentrations are used in this study. It is showed that with less than 2000 training samples, by using simple linear regression, one can achieve good prediction of layer thickness and doping of a given IV curve.
{"title":"TCAD Augmented Machine Learning for Semiconductor Device Failure Troubleshooting and Reverse Engineering","authors":"Y. S. Bankapalli, H. Wong","doi":"10.1109/SISPAD.2019.8870467","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870467","url":null,"abstract":"In this paper, we show the possibility of using Technology Computer Aided Design (TCAD) to assist machine learning for semiconductor device failure trouble shooting and device reverse engineering. When TCAD simulation models and parameters are properly chosen and calibrated, large number of devices with random defects and structural characteristics can be generated and simulated. The results can then be used to train machine learning algorithms to predict the defect and structural characteristics of a device with given electrical characteristics (such as IV’s and CV’s). 1D PIN diode with various layer thicknesses and doping concentrations are used in this study. It is showed that with less than 2000 training samples, by using simple linear regression, one can achieve good prediction of layer thickness and doping of a given IV curve.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"73 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85819429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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