Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870400
V. Thirunavukkarasu, H. Carrillo-Nuñez, F. D. Alema, S. Berrada, O. Badami, C. Medina-Bailón, T. Datta, J. Lee, Y. Guen, V. Georgiev, A. Asenov
In this paper we present state of the art coupled-mode space based Non-Equilibrium Green Function approach for modeling quantum transport accurately in the vertically stacked Silicon nanowire (SiNW) FETs. Random discrete dopants (RDD) and metal grain granularity (MGG) induced variability in stacked SiNW FETs are also investigated. Furthermore, charge spectrum, current spectrum w.r.t. sub bands and the space-resolved Local Density of States (LDOS) corresponding to the location of band edge are analyzed in detail. The newly developed flexible and computationally efficient models implemented in quantum transport simulation tool NESS provides valuable insights on the effect of RDD and MGG variability on Sub-Threshold Swing (SS), Threshold Voltage $( mathrm {V}_{TH})$ shift, On/Off Current $( mathrm {I}_{ON}/ mathrm {I}_{OFF})$ ratio and quantum confined charge transport mechanism.
{"title":"Efficient Coupled-mode space based Non-Equilibrium Green’s Function Approach for Modeling Quantum Transport and Variability in Vertically Stacked SiNW FETs","authors":"V. Thirunavukkarasu, H. Carrillo-Nuñez, F. D. Alema, S. Berrada, O. Badami, C. Medina-Bailón, T. Datta, J. Lee, Y. Guen, V. Georgiev, A. Asenov","doi":"10.1109/SISPAD.2019.8870400","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870400","url":null,"abstract":"In this paper we present state of the art coupled-mode space based Non-Equilibrium Green Function approach for modeling quantum transport accurately in the vertically stacked Silicon nanowire (SiNW) FETs. Random discrete dopants (RDD) and metal grain granularity (MGG) induced variability in stacked SiNW FETs are also investigated. Furthermore, charge spectrum, current spectrum w.r.t. sub bands and the space-resolved Local Density of States (LDOS) corresponding to the location of band edge are analyzed in detail. The newly developed flexible and computationally efficient models implemented in quantum transport simulation tool NESS provides valuable insights on the effect of RDD and MGG variability on Sub-Threshold Swing (SS), Threshold Voltage $( mathrm {V}_{TH})$ shift, On/Off Current $( mathrm {I}_{ON}/ mathrm {I}_{OFF})$ ratio and quantum confined charge transport mechanism.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"9 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87772458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870505
Wangyong Chen, Linlin Cai, Xiaoyan Liu, G. Du
Trap dynamics based 3D Kinetic Monte Carlo (KMC) simulator is developed to offer physical insights into the electrical characteristics degradation and quantitative reliability evaluation for advanced MOSFETs. The physics-based 3D KMC simulation enables to reproduce the evolution of stress-induced charge distribution in the multi-layer dielectrics and identify the trap impact on the degradation of device performance. Simulation results of UTBB FDSOI MOSFETs reveal that assumption of the uniform charge distribution in the dielectrics induced by stress underestimates the statistical degradation and variability. It also shows that the higher intrinsic trap density of back-gate oxide leads to the larger degradation and its variability, especially for the increased back-gate bias case.
{"title":"Trap Dynamics based 3D Kinetic Monte Carlo Simulation for Reliability Evaluation of UTBB MOSFETs","authors":"Wangyong Chen, Linlin Cai, Xiaoyan Liu, G. Du","doi":"10.1109/SISPAD.2019.8870505","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870505","url":null,"abstract":"Trap dynamics based 3D Kinetic Monte Carlo (KMC) simulator is developed to offer physical insights into the electrical characteristics degradation and quantitative reliability evaluation for advanced MOSFETs. The physics-based 3D KMC simulation enables to reproduce the evolution of stress-induced charge distribution in the multi-layer dielectrics and identify the trap impact on the degradation of device performance. Simulation results of UTBB FDSOI MOSFETs reveal that assumption of the uniform charge distribution in the dielectrics induced by stress underestimates the statistical degradation and variability. It also shows that the higher intrinsic trap density of back-gate oxide leads to the larger degradation and its variability, especially for the increased back-gate bias case.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"45 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77671625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870354
L. Balestra, S. Reggiani, A. Gnudi, E. Gnani, G. Baccarani, J. Dobrzynska, J. Vobecký
Diamond-like carbon (DLC) is a very attractive material for Microelectronics, as it can be used to create robust passivation layers in semiconductor devices. In this work, the modelling of DLC in a TCAD framework is addressed, with special attention to the role played as the bevel coating of large-area high-voltage diodes. The TCAD simulations are nicely compared with experiments, giving rise to a detailed explanation of the role played by the DLC conductivity on the diode performance.
{"title":"Numerical Investigation of the Leakage Current and Blocking Capabilities of High-Power Diodes with Doped DLC Passivation Layers","authors":"L. Balestra, S. Reggiani, A. Gnudi, E. Gnani, G. Baccarani, J. Dobrzynska, J. Vobecký","doi":"10.1109/SISPAD.2019.8870354","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870354","url":null,"abstract":"Diamond-like carbon (DLC) is a very attractive material for Microelectronics, as it can be used to create robust passivation layers in semiconductor devices. In this work, the modelling of DLC in a TCAD framework is addressed, with special attention to the role played as the bevel coating of large-area high-voltage diodes. The TCAD simulations are nicely compared with experiments, giving rise to a detailed explanation of the role played by the DLC conductivity on the diode performance.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"22 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74288108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870518
O. Badami, T. Sadi, V. Georgiev, F. Adamu-Lema, V. Thirunavukkarasu, J. Ding, A. Asenov
To keep up with the increase in demand for storing data, flash memories have been scaled down dramatically and stacked by the semiconductor industry. Furthermore, processing large data has highlighted the limitations of the von Neumann architecture. To overcome this, different types of memory devices like Resistive Random-Access Memories (RRAMs) have also gained a lot of importance. Hence, carrier dynamics in oxides has gained significant traction in recent years. In this work, we discuss the kinetic Monte Carlo methodology as implemented in our integrated simulation environment NESS (Nano-Electronic Simulation Software) that allows us to study carrier transport in the oxide using accurate physics based models. As an example, we study the retention characteristics in a molecule based flash memory.
{"title":"Multiscale Modeling of Charge Trapping in Molecule Based Flash Memories","authors":"O. Badami, T. Sadi, V. Georgiev, F. Adamu-Lema, V. Thirunavukkarasu, J. Ding, A. Asenov","doi":"10.1109/SISPAD.2019.8870518","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870518","url":null,"abstract":"To keep up with the increase in demand for storing data, flash memories have been scaled down dramatically and stacked by the semiconductor industry. Furthermore, processing large data has highlighted the limitations of the von Neumann architecture. To overcome this, different types of memory devices like Resistive Random-Access Memories (RRAMs) have also gained a lot of importance. Hence, carrier dynamics in oxides has gained significant traction in recent years. In this work, we discuss the kinetic Monte Carlo methodology as implemented in our integrated simulation environment NESS (Nano-Electronic Simulation Software) that allows us to study carrier transport in the oxide using accurate physics based models. As an example, we study the retention characteristics in a molecule based flash memory.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"89 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74724149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/sispad.2019.8870457
Uma Sharma, S. Mahapatra
A SPICE compatible model is developed for the time kinetics of linear drain current drift (ΔIDLIN) under Hot Carrier Degradation (HCD) stress in 28 nm Fully Depleted Silicon On Insulator (FDSOI) n-channel FETs having High-K Metal Gate (HKMG) gate stack. The impact of varying the drain (VD), gate (VG) and body (VBB) biases is modeled. The framework is also capable of modeling the channel length (LCH) and gate-oxide thickness (TOX) variations. Impact of Self-Heating Effect (SHE) has also been taken into consideration during ΔIDLIN modeling.
{"title":"A SPICE Compatible Compact Model for Process and Bias Dependence of HCD in HKMG FDSOI MOSFETs","authors":"Uma Sharma, S. Mahapatra","doi":"10.1109/sispad.2019.8870457","DOIUrl":"https://doi.org/10.1109/sispad.2019.8870457","url":null,"abstract":"A SPICE compatible model is developed for the time kinetics of linear drain current drift (ΔI<inf>DLIN</inf>) under Hot Carrier Degradation (HCD) stress in 28 nm Fully Depleted Silicon On Insulator (FDSOI) n-channel FETs having High-K Metal Gate (HKMG) gate stack. The impact of varying the drain (V<inf>D</inf>), gate (V<inf>G</inf>) and body (V<inf>BB</inf>) biases is modeled. The framework is also capable of modeling the channel length (L<inf>CH</inf>) and gate-oxide thickness (T<inf>OX</inf>) variations. Impact of Self-Heating Effect (SHE) has also been taken into consideration during ΔI<inf>DLIN</inf> modeling.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82195444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870456
P. Khakbaz, F. Driussi, A. Gambi, Paolo Giannozzi, S. Venica, David Esseni, A. Gaho, S. Kataria, Max C. Lemme
The experimental results of Metal-graphene (M-G) contact resistance RC have been investigated in-depth by means of Density Functional Theory (DFT). The simulations allowed us to build a consistent picture explaining the RC dependence on the metal contact materials employed in this work and on the applied back-gate voltage. In this respect, the M-G distance is paramount in determining the RC behavior.
{"title":"DFT study of graphene doping due to metal contacts","authors":"P. Khakbaz, F. Driussi, A. Gambi, Paolo Giannozzi, S. Venica, David Esseni, A. Gaho, S. Kataria, Max C. Lemme","doi":"10.1109/SISPAD.2019.8870456","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870456","url":null,"abstract":"The experimental results of Metal-graphene (M-G) contact resistance RC have been investigated in-depth by means of Density Functional Theory (DFT). The simulations allowed us to build a consistent picture explaining the RC dependence on the metal contact materials employed in this work and on the applied back-gate voltage. In this respect, the M-G distance is paramount in determining the RC behavior.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"25 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88520062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870553
E. Caruso, J. Lin, S. Monaghan, K. Cherkaoui, L. Floyd, F. Gity, P. Palestri, D. Esseni, L. Selmi, P. Hurley
In this work, we describe how the frequency dependence of conductance (G) and capacitance (C) of a generic MOS capacitor results in peaks of the functions $mathrm {G}/omega$ and $-omega mathrm {dC}/mathrm {d}omega$. By means of TCAD simulations, we show that $mathrm {G}/omega$ and $-omega mathrm {dC}/mathrm {d}omega$ peak at the same value and at the same frequency for every bias point from accumulation to inversion. We illustrate how the properties of the peaks change with the semiconductor doping ($mathrm {N}_{mathrm {D}}$), oxide capacitance (Cox), minority carrier lifetime $(tau_{mathrm{g}})$, interface defect parameters ($mathrm {lt pgt N}_{mathrm {IT}}$, $sigma$) and majority carrier dielectric relaxation time $(tau_{mathrm {r}})$. Finally, we demonstrate how these insights on $mathrm {G}/omega$ and $-omega mathrm {dC}/mathrm {d}omega$ can be used to extract Cox, $mathrm {lt pgt N}_{mathrm {D}}$ and $tau_{mathrm {g}}$ from InGaAs MOSCAP measurements
{"title":"Relationship between capacitance and conductance in MOS capacitors","authors":"E. Caruso, J. Lin, S. Monaghan, K. Cherkaoui, L. Floyd, F. Gity, P. Palestri, D. Esseni, L. Selmi, P. Hurley","doi":"10.1109/SISPAD.2019.8870553","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870553","url":null,"abstract":"In this work, we describe how the frequency dependence of conductance (G) and capacitance (C) of a generic MOS capacitor results in peaks of the functions $mathrm {G}/omega$ and $-omega mathrm {dC}/mathrm {d}omega$. By means of TCAD simulations, we show that $mathrm {G}/omega$ and $-omega mathrm {dC}/mathrm {d}omega$ peak at the same value and at the same frequency for every bias point from accumulation to inversion. We illustrate how the properties of the peaks change with the semiconductor doping ($mathrm {N}_{mathrm {D}}$), oxide capacitance (Cox), minority carrier lifetime $(tau_{mathrm{g}})$, interface defect parameters ($mathrm {lt pgt N}_{mathrm {IT}}$, $sigma$) and majority carrier dielectric relaxation time $(tau_{mathrm {r}})$. Finally, we demonstrate how these insights on $mathrm {G}/omega$ and $-omega mathrm {dC}/mathrm {d}omega$ can be used to extract Cox, $mathrm {lt pgt N}_{mathrm {D}}$ and $tau_{mathrm {g}}$ from InGaAs MOSCAP measurements","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"33 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87362119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870434
H. Ilatikhameneh, Hong-hyun Park, Zhengping Jiang, W. Choi, M. A. Pourghaderi, Jongchol Kim, U. Kwon, D. Kim
In this work, density functional tight binding (DFTB) calculations are used to study the characteristics of full gate stack TiN/HfO2/SiO2/Si and possible effective work-function (EWF) tuning options. First, the DFTB parameterization method to produce both electronic and repulsion information for all atom pairs is introduced briefly. Since the simulated gate-stack structure has thousands of atoms, conventional relaxation methods are computationally intensive. Hence a method to relax and passivate the material interfaces is introduced. Next, the impact of aluminum substitution is studied. It is shown that the change in EWF strongly depends on the atom which is substituting Aluminum; e.g. Aluminum substitutions of Hf and Ti show opposite impact on EWF. Finally, the origin of this different behavior is discussed.
{"title":"Effective work-function tuning of TiN/HfO2/SiO2 gate-stack; a density functional tight binding study","authors":"H. Ilatikhameneh, Hong-hyun Park, Zhengping Jiang, W. Choi, M. A. Pourghaderi, Jongchol Kim, U. Kwon, D. Kim","doi":"10.1109/SISPAD.2019.8870434","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870434","url":null,"abstract":"In this work, density functional tight binding (DFTB) calculations are used to study the characteristics of full gate stack TiN/HfO2/SiO2/Si and possible effective work-function (EWF) tuning options. First, the DFTB parameterization method to produce both electronic and repulsion information for all atom pairs is introduced briefly. Since the simulated gate-stack structure has thousands of atoms, conventional relaxation methods are computationally intensive. Hence a method to relax and passivate the material interfaces is introduced. Next, the impact of aluminum substitution is studied. It is shown that the change in EWF strongly depends on the atom which is substituting Aluminum; e.g. Aluminum substitutions of Hf and Ti show opposite impact on EWF. Finally, the origin of this different behavior is discussed.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"57 4 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90113299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/sispad.2019.8870433
{"title":"SISPAD 2019 Author Index","authors":"","doi":"10.1109/sispad.2019.8870433","DOIUrl":"https://doi.org/10.1109/sispad.2019.8870433","url":null,"abstract":"","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"44 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79406803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870548
E. Caruso, F. Bettetti, L. D. Linz, D. Pin, M. Segatto, P. Palestri
We present an approach to model 1/f and random telegraph noise in TCAD combining the models for non-local tunneling to traps and generation/recombination noise. The TCAD results are compared with simple numerical expression to understand the influence of the device and trap parameters on the noise spectrum. The simulation deck is then used to compute the low-frequency noise spectrum in III-V MOSFETs using traps distributions extracted from multi-frequency C-V measurements.
{"title":"Modeling 1/f and Lorenzian noise in III-V MOSFETs","authors":"E. Caruso, F. Bettetti, L. D. Linz, D. Pin, M. Segatto, P. Palestri","doi":"10.1109/SISPAD.2019.8870548","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870548","url":null,"abstract":"We present an approach to model 1/f and random telegraph noise in TCAD combining the models for non-local tunneling to traps and generation/recombination noise. The TCAD results are compared with simple numerical expression to understand the influence of the device and trap parameters on the noise spectrum. The simulation deck is then used to compute the low-frequency noise spectrum in III-V MOSFETs using traps distributions extracted from multi-frequency C-V measurements.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"88 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72694359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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