Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870540
Linlin Cai, Wangyong Chen, Xing Zhang, Yudi Zhao, Xiaoyan Liu
A 3D kinetic Monte Carlo simulator is developed to describe the electromigration (EM) behaviors in multi-layer interconnects based on the proposed physical mechanism including the metal ions activation, hopping and aggregation processes. The effects of e-wind, hydrostatic stress and Joule heat on EM are implemented in the simulator. The void locations in two directions of upstream and downstream current flow are well reproduced by the simulator, consistent with the experimental observations. The microscopic void morphology and EM degradation are investigated with different operation schemes.
{"title":"3D Kinetic Monte Carlo Simulation of Electromigration in Multi-layer Interconnects","authors":"Linlin Cai, Wangyong Chen, Xing Zhang, Yudi Zhao, Xiaoyan Liu","doi":"10.1109/SISPAD.2019.8870540","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870540","url":null,"abstract":"A 3D kinetic Monte Carlo simulator is developed to describe the electromigration (EM) behaviors in multi-layer interconnects based on the proposed physical mechanism including the metal ions activation, hopping and aggregation processes. The effects of e-wind, hydrostatic stress and Joule heat on EM are implemented in the simulator. The void locations in two directions of upstream and downstream current flow are well reproduced by the simulator, consistent with the experimental observations. The microscopic void morphology and EM degradation are investigated with different operation schemes.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"15 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74771321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870541
M. Krysicki, B. Salski, P. Kopyt
In this paper hybrid method for electromagnetic (EM) modelling of coherent radiation in semiconductor lasers is presented. Described approach consist of drift diffusion (DD) model and electromagnetic simulation. Four-level two-electron atomic system with Pauli Exclusion Principle (PEP) extended by electric pumping ratio has been used as lasing model.
{"title":"Hybrid Method For Electromagnetic Modelling of Coherent Radiation in Semiconductor Lasers","authors":"M. Krysicki, B. Salski, P. Kopyt","doi":"10.1109/SISPAD.2019.8870541","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870541","url":null,"abstract":"In this paper hybrid method for electromagnetic (EM) modelling of coherent radiation in semiconductor lasers is presented. Described approach consist of drift diffusion (DD) model and electromagnetic simulation. Four-level two-electron atomic system with Pauli Exclusion Principle (PEP) extended by electric pumping ratio has been used as lasing model.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"22 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78715173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870538
Camilla La Torre, A. Zurhelle, S. Menzel
In this paper, a compact model for filamentary, resistive switching devices based on the valence change mechanism is proposed. It is based on the motion of ionic defects in a filamentary region. In contrast to previous model, it uses two state variables representing the ionic defect concentration close to the two opposing electrodes. This enables the modelling of ionic diffusion and, hence, drift-diffusion equilibria. In addition, the model can be used to simulate complementary switching in addition to the standard bipolar switching behavior.
{"title":"Compact Modelling of Resistive Switching Devices based on the Valence Change Mechanism","authors":"Camilla La Torre, A. Zurhelle, S. Menzel","doi":"10.1109/SISPAD.2019.8870538","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870538","url":null,"abstract":"In this paper, a compact model for filamentary, resistive switching devices based on the valence change mechanism is proposed. It is based on the motion of ionic defects in a filamentary region. In contrast to previous model, it uses two state variables representing the ionic defect concentration close to the two opposing electrodes. This enables the modelling of ionic diffusion and, hence, drift-diffusion equilibria. In addition, the model can be used to simulate complementary switching in addition to the standard bipolar switching behavior.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"71 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74954926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870499
A. Biswas, Daniel Ludwig, M. Cotorogea
In this work, we present a new calibration technique of an IGBT and power diode compact model using a commercially available tool optiSLang™ [1]. We show that with such a computer-aided technique, we can get a accurate match in switching transients just by calibrating the static (transfer and output characteristics) and the gate charge curves. Furthermore, we present a Verilog-A implementation of a physics based IGBT and power diode compact model [2], [3]. We demonstrate the benefits of a Verilog-A model by comparing the run time and convergence performance with a standard SPICE implementation.
{"title":"A New Computer-Aided Calibration Technique of Physics Based IGBT & Power-Diode Compact Models with Verilog-A Implementation","authors":"A. Biswas, Daniel Ludwig, M. Cotorogea","doi":"10.1109/SISPAD.2019.8870499","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870499","url":null,"abstract":"In this work, we present a new calibration technique of an IGBT and power diode compact model using a commercially available tool optiSLang™ [1]. We show that with such a computer-aided technique, we can get a accurate match in switching transients just by calibrating the static (transfer and output characteristics) and the gate charge curves. Furthermore, we present a Verilog-A implementation of a physics based IGBT and power diode compact model [2], [3]. We demonstrate the benefits of a Verilog-A model by comparing the run time and convergence performance with a standard SPICE implementation.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"64 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79343675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870407
N. Shrestha, Chao-Hsuan Chen, Zuo‐Min Tsai, Yiming Li, J. Tarng, S. Samukawa
Electrical characteristics of lattice matched AlInGaN/GaN high electron mobility transistors with different barrier engineering was studied theoretically by solving drift diffusion equation. The results of the study thoroughly disclose the mitigation of induced polarization charge on lowering Al and In content in barrier resulting in a positive shift of threshold voltage with huge deduction on drain current. The newly designed lattice match double A10.54 In0.12 Ga0.34 N/ Al0.18 In0.04 Ga0.78 N barrier recess gate HEMT helps to boost the drain current by reducing the access resistance and enhancing the polarization charge density. The proposed HEMT exalted current density and transconductance by two times with significant shift of threshold voltage in positive axis than that of single barrier structure. Conclusively, the high performance novel double barrier recess gate E-mode HEMT will be key for real and efficient high power switching application.
{"title":"Barrier Engineering of Lattice Matched AlInGaN/ GaN Heterostructure Toward High Performance E-mode Operation","authors":"N. Shrestha, Chao-Hsuan Chen, Zuo‐Min Tsai, Yiming Li, J. Tarng, S. Samukawa","doi":"10.1109/SISPAD.2019.8870407","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870407","url":null,"abstract":"Electrical characteristics of lattice matched AlInGaN/GaN high electron mobility transistors with different barrier engineering was studied theoretically by solving drift diffusion equation. The results of the study thoroughly disclose the mitigation of induced polarization charge on lowering Al and In content in barrier resulting in a positive shift of threshold voltage with huge deduction on drain current. The newly designed lattice match double A10.54 In0.12 Ga0.34 N/ Al0.18 In0.04 Ga0.78 N barrier recess gate HEMT helps to boost the drain current by reducing the access resistance and enhancing the polarization charge density. The proposed HEMT exalted current density and transconductance by two times with significant shift of threshold voltage in positive axis than that of single barrier structure. Conclusively, the high performance novel double barrier recess gate E-mode HEMT will be key for real and efficient high power switching application.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"25 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81004293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870459
M. Kantner, T. Koprucki, H. Wünsche, U. Bandelow
The device-scale simulation of electrically driven quantum light sources based on semiconductor quantum dots requires a combination of the (semi-)classical semiconductor device equations with cavity quantum electrodynamics. We present a comprehensive quantum-classical simulation approach that self-consistently couples the (semi-)classical drift-diffusion system to a Lindblad-type quantum master equation. This allows to describe the spatially resolved carrier transport in complex, multi-dimensional device geometries along with the fully quantum-mechanical light-matter interaction in the quantum dot-cavity system. The latter gives access to important quantum optical figures of merit, in particular the second-order correlation function of the emitted radiation. In order to account for the quantum confined Stark effect in the device’s internal electric field, the system is solved along with a Schrödinger–Poisson problem, that describes the envelope wave functions and energy levels of the quantum dot carriers. The approach is demonstrated by numerical simulations of a single-photon emitting diode.
{"title":"Simulation of quantum dot based single-photon sources using the Schrödinger-Poisson-Drift-Diffusion-Lindblad system","authors":"M. Kantner, T. Koprucki, H. Wünsche, U. Bandelow","doi":"10.1109/SISPAD.2019.8870459","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870459","url":null,"abstract":"The device-scale simulation of electrically driven quantum light sources based on semiconductor quantum dots requires a combination of the (semi-)classical semiconductor device equations with cavity quantum electrodynamics. We present a comprehensive quantum-classical simulation approach that self-consistently couples the (semi-)classical drift-diffusion system to a Lindblad-type quantum master equation. This allows to describe the spatially resolved carrier transport in complex, multi-dimensional device geometries along with the fully quantum-mechanical light-matter interaction in the quantum dot-cavity system. The latter gives access to important quantum optical figures of merit, in particular the second-order correlation function of the emitted radiation. In order to account for the quantum confined Stark effect in the device’s internal electric field, the system is solved along with a Schrödinger–Poisson problem, that describes the envelope wave functions and energy levels of the quantum dot carriers. The approach is demonstrated by numerical simulations of a single-photon emitting diode.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"22 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89215886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/sispad.2019.8870447
S. Ryu, Yunho Kim, Dylan Pederson, Jonghyun Lee, Young-Kwang Kim, L. Raja, Jiho Uh, Sangjin Choi
A plasma native oxide cleaning process is widely used on the semiconductor production line to remove oxide impurities on silicon surfaces of an wafer. In this study, a flow simulation with microwave plasma species has been conducted to analyze the flow characteristics in a showerhead that affect the batch uniformity in the process. In particular, the distributions of temperature and mass flow rate of the gas as well as the number density of hydrogen radicals at the showerhead hole outlets were compared for different showerhead designs by using computational fluid dynamics. The distribution of gas temperature at the hole outlets was found to be inversely proportional to one of gas mass flow rate by the simulation results. However, mass flow rate distribution for the total gas shows a different trend from one of hydrogen radicals in the showerhead hole outlets. The showerhead design with low temperature gradient also showed a more uniform mass flow rate profile at the hole outlets, which was validated by the simulation results.
{"title":"Simulation of Chemically Reacting Flow in Plasma Native Oxide Cleaning Process","authors":"S. Ryu, Yunho Kim, Dylan Pederson, Jonghyun Lee, Young-Kwang Kim, L. Raja, Jiho Uh, Sangjin Choi","doi":"10.1109/sispad.2019.8870447","DOIUrl":"https://doi.org/10.1109/sispad.2019.8870447","url":null,"abstract":"A plasma native oxide cleaning process is widely used on the semiconductor production line to remove oxide impurities on silicon surfaces of an wafer. In this study, a flow simulation with microwave plasma species has been conducted to analyze the flow characteristics in a showerhead that affect the batch uniformity in the process. In particular, the distributions of temperature and mass flow rate of the gas as well as the number density of hydrogen radicals at the showerhead hole outlets were compared for different showerhead designs by using computational fluid dynamics. The distribution of gas temperature at the hole outlets was found to be inversely proportional to one of gas mass flow rate by the simulation results. However, mass flow rate distribution for the total gas shows a different trend from one of hydrogen radicals in the showerhead hole outlets. The showerhead design with low temperature gradient also showed a more uniform mass flow rate profile at the hole outlets, which was validated by the simulation results.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"263 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88811484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870520
N. Rostand, S. Martinie, J. Lacord, O. Rozeau, T. Poiroux, G. Hubert
Single Event Transients (SET) are ionizing particles induced current pulses which are able to generate soft errors in CMOS circuits. In Silicon-on-Insulator (SOI) technologies, bipolar amplification phenomena is more significant due to presence of the Burried Oxide (BOX), which is detrimental to soft errors sensitivity. State of the art FDSOI SET models account for bipolar amplification through a dynamic pre-factor. This approach is mainly empirical and not compact. In this work, we propose a SET compact model for FDSOI MOSFETs including a physical modeling of bipolar amplification. Results are validated through TCAD simulations. A circuit level approach is proposed considering arbitrary generation within functional SRAM cell. This approach allows more realistic Single Event Upset (SEU) prediction and we show how circuit level generation can influence SEU prediction.
{"title":"Single Event Transient Compact Model for FDSOI MOSFETs Taking Bipolar Amplification and Circuit Level Arbitrary Generation Into Account","authors":"N. Rostand, S. Martinie, J. Lacord, O. Rozeau, T. Poiroux, G. Hubert","doi":"10.1109/SISPAD.2019.8870520","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870520","url":null,"abstract":"Single Event Transients (SET) are ionizing particles induced current pulses which are able to generate soft errors in CMOS circuits. In Silicon-on-Insulator (SOI) technologies, bipolar amplification phenomena is more significant due to presence of the Burried Oxide (BOX), which is detrimental to soft errors sensitivity. State of the art FDSOI SET models account for bipolar amplification through a dynamic pre-factor. This approach is mainly empirical and not compact. In this work, we propose a SET compact model for FDSOI MOSFETs including a physical modeling of bipolar amplification. Results are validated through TCAD simulations. A circuit level approach is proposed considering arbitrary generation within functional SRAM cell. This approach allows more realistic Single Event Upset (SEU) prediction and we show how circuit level generation can influence SEU prediction.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"26 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87264064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870556
C. Medina-Bailón, T. Dutta, F. Klüpfel, S. Barraud, V. Georgiev, J. Lorenz, A. Asenov
In the simulation framework for the study of aggressively scaled CMOS transistors, it is mandatory to capture the dependence of the model parameters on the physical structure of the devices in order to perform predictive device simulations. TCAD models typically have tunable parameters to characterize physical phenomena that ultimately determine different measurable electrical quantities. In this work, we extract the density gradient quantum correction parameters and Monte Carlo scattering parameters in order to fit the C-V characteristics and the low field mobility to experimental data in the case of Tri-gate nanowire transistors, which are of high importance for the semiconductor industry. Once the relevant parameters are calibrated, we have obtained a good agreement between the experimentally measured mobility and the predictions from the Monte Carlo module of the Synopsys TCAD tool Garand.
{"title":"Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors","authors":"C. Medina-Bailón, T. Dutta, F. Klüpfel, S. Barraud, V. Georgiev, J. Lorenz, A. Asenov","doi":"10.1109/SISPAD.2019.8870556","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870556","url":null,"abstract":"In the simulation framework for the study of aggressively scaled CMOS transistors, it is mandatory to capture the dependence of the model parameters on the physical structure of the devices in order to perform predictive device simulations. TCAD models typically have tunable parameters to characterize physical phenomena that ultimately determine different measurable electrical quantities. In this work, we extract the density gradient quantum correction parameters and Monte Carlo scattering parameters in order to fit the C-V characteristics and the low field mobility to experimental data in the case of Tri-gate nanowire transistors, which are of high importance for the semiconductor industry. Once the relevant parameters are calibrated, we have obtained a good agreement between the experimentally measured mobility and the predictions from the Monte Carlo module of the Synopsys TCAD tool Garand.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"6 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86527021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870453
M. Cheng
A reduced-order model for quantum eigenvalue problems developed previously is revised and combined with the domain decomposition method to construct the quantum element method (QEM). The basic idea of the QEM is to partition a quantum domain structure into several subdomains or elements. Each element is projected onto a functional space using the proper orthogonal decommission. These elements are then combined together to construct the whole domain structure. The proposed QEM has been demonstrated in 2 quantum well structures constructed with several elements. The study illustrates that the QEM is capable of offering accurate prediction of wave functions and quantum eigenenergies with a substantial reduction in the numerical degrees of freedom compared to direct numerical simulation of the Schrödinger equation.
{"title":"A Quantum Element Reduced Order Model","authors":"M. Cheng","doi":"10.1109/SISPAD.2019.8870453","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870453","url":null,"abstract":"A reduced-order model for quantum eigenvalue problems developed previously is revised and combined with the domain decomposition method to construct the quantum element method (QEM). The basic idea of the QEM is to partition a quantum domain structure into several subdomains or elements. Each element is projected onto a functional space using the proper orthogonal decommission. These elements are then combined together to construct the whole domain structure. The proposed QEM has been demonstrated in 2 quantum well structures constructed with several elements. The study illustrates that the QEM is capable of offering accurate prediction of wave functions and quantum eigenenergies with a substantial reduction in the numerical degrees of freedom compared to direct numerical simulation of the Schrödinger equation.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"17 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84742068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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