首页 > 最新文献

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)最新文献

英文 中文
3D Kinetic Monte Carlo Simulation of Electromigration in Multi-layer Interconnects 多层互连中电迁移的三维动力学蒙特卡罗模拟
Linlin Cai, Wangyong Chen, Xing Zhang, Yudi Zhao, Xiaoyan Liu
A 3D kinetic Monte Carlo simulator is developed to describe the electromigration (EM) behaviors in multi-layer interconnects based on the proposed physical mechanism including the metal ions activation, hopping and aggregation processes. The effects of e-wind, hydrostatic stress and Joule heat on EM are implemented in the simulator. The void locations in two directions of upstream and downstream current flow are well reproduced by the simulator, consistent with the experimental observations. The microscopic void morphology and EM degradation are investigated with different operation schemes.
基于所提出的金属离子活化、跳变和聚集等物理机制,开发了三维动力学蒙特卡罗模拟器来描述多层互连中的电迁移行为。在仿真机上实现了电子风、静水应力和焦耳热对电磁的影响。模拟结果较好地再现了电流上游和下游两个方向上的空洞位置,与实验结果一致。在不同的操作方案下,研究了微孔形貌和电磁降解。
{"title":"3D Kinetic Monte Carlo Simulation of Electromigration in Multi-layer Interconnects","authors":"Linlin Cai, Wangyong Chen, Xing Zhang, Yudi Zhao, Xiaoyan Liu","doi":"10.1109/SISPAD.2019.8870540","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870540","url":null,"abstract":"A 3D kinetic Monte Carlo simulator is developed to describe the electromigration (EM) behaviors in multi-layer interconnects based on the proposed physical mechanism including the metal ions activation, hopping and aggregation processes. The effects of e-wind, hydrostatic stress and Joule heat on EM are implemented in the simulator. The void locations in two directions of upstream and downstream current flow are well reproduced by the simulator, consistent with the experimental observations. The microscopic void morphology and EM degradation are investigated with different operation schemes.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"15 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74771321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Hybrid Method For Electromagnetic Modelling of Coherent Radiation in Semiconductor Lasers 半导体激光器相干辐射电磁建模的混合方法
M. Krysicki, B. Salski, P. Kopyt
In this paper hybrid method for electromagnetic (EM) modelling of coherent radiation in semiconductor lasers is presented. Described approach consist of drift diffusion (DD) model and electromagnetic simulation. Four-level two-electron atomic system with Pauli Exclusion Principle (PEP) extended by electric pumping ratio has been used as lasing model.
本文提出了一种用于半导体激光器相干辐射电磁建模的混合方法。该方法由漂移扩散(DD)模型和电磁仿真组成。采用电抽运比扩展泡利不相容原理(PEP)的四能级双电子原子系统作为激光模型。
{"title":"Hybrid Method For Electromagnetic Modelling of Coherent Radiation in Semiconductor Lasers","authors":"M. Krysicki, B. Salski, P. Kopyt","doi":"10.1109/SISPAD.2019.8870541","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870541","url":null,"abstract":"In this paper hybrid method for electromagnetic (EM) modelling of coherent radiation in semiconductor lasers is presented. Described approach consist of drift diffusion (DD) model and electromagnetic simulation. Four-level two-electron atomic system with Pauli Exclusion Principle (PEP) extended by electric pumping ratio has been used as lasing model.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"22 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78715173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact Modelling of Resistive Switching Devices based on the Valence Change Mechanism 基于价变机制的电阻开关器件紧凑建模
Camilla La Torre, A. Zurhelle, S. Menzel
In this paper, a compact model for filamentary, resistive switching devices based on the valence change mechanism is proposed. It is based on the motion of ionic defects in a filamentary region. In contrast to previous model, it uses two state variables representing the ionic defect concentration close to the two opposing electrodes. This enables the modelling of ionic diffusion and, hence, drift-diffusion equilibria. In addition, the model can be used to simulate complementary switching in addition to the standard bipolar switching behavior.
本文提出了一种基于价变机制的纤丝电阻开关器件的紧凑模型。它是基于离子缺陷在细丝区域的运动。与以前的模型相比,它使用两个状态变量表示靠近两个相对电极的离子缺陷浓度。这使得离子扩散和漂移扩散平衡的建模成为可能。此外,除了标准的双极开关行为外,该模型还可以用于模拟互补开关。
{"title":"Compact Modelling of Resistive Switching Devices based on the Valence Change Mechanism","authors":"Camilla La Torre, A. Zurhelle, S. Menzel","doi":"10.1109/SISPAD.2019.8870538","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870538","url":null,"abstract":"In this paper, a compact model for filamentary, resistive switching devices based on the valence change mechanism is proposed. It is based on the motion of ionic defects in a filamentary region. In contrast to previous model, it uses two state variables representing the ionic defect concentration close to the two opposing electrodes. This enables the modelling of ionic diffusion and, hence, drift-diffusion equilibria. In addition, the model can be used to simulate complementary switching in addition to the standard bipolar switching behavior.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"71 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74954926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A New Computer-Aided Calibration Technique of Physics Based IGBT & Power-Diode Compact Models with Verilog-A Implementation 基于物理的IGBT &功率二极管紧凑模型的计算机辅助校准新技术与Verilog-A实现
A. Biswas, Daniel Ludwig, M. Cotorogea
In this work, we present a new calibration technique of an IGBT and power diode compact model using a commercially available tool optiSLang™ [1]. We show that with such a computer-aided technique, we can get a accurate match in switching transients just by calibrating the static (transfer and output characteristics) and the gate charge curves. Furthermore, we present a Verilog-A implementation of a physics based IGBT and power diode compact model [2], [3]. We demonstrate the benefits of a Verilog-A model by comparing the run time and convergence performance with a standard SPICE implementation.
在这项工作中,我们提出了一种新的IGBT和功率二极管紧凑模型的校准技术,使用市售工具opti俚语™[1]。我们表明,利用这种计算机辅助技术,我们可以通过校准静态(转移和输出特性)和栅极电荷曲线来获得开关瞬态的精确匹配。此外,我们提出了一个基于物理的IGBT和功率二极管紧凑模型的Verilog-A实现[2],[3]。我们通过比较运行时和收敛性能与标准SPICE实现来展示Verilog-A模型的优点。
{"title":"A New Computer-Aided Calibration Technique of Physics Based IGBT & Power-Diode Compact Models with Verilog-A Implementation","authors":"A. Biswas, Daniel Ludwig, M. Cotorogea","doi":"10.1109/SISPAD.2019.8870499","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870499","url":null,"abstract":"In this work, we present a new calibration technique of an IGBT and power diode compact model using a commercially available tool optiSLang™ [1]. We show that with such a computer-aided technique, we can get a accurate match in switching transients just by calibrating the static (transfer and output characteristics) and the gate charge curves. Furthermore, we present a Verilog-A implementation of a physics based IGBT and power diode compact model [2], [3]. We demonstrate the benefits of a Verilog-A model by comparing the run time and convergence performance with a standard SPICE implementation.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"64 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79343675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Barrier Engineering of Lattice Matched AlInGaN/ GaN Heterostructure Toward High Performance E-mode Operation 面向高性能e模运行的晶格匹配AlInGaN/ GaN异质结构势垒工程
N. Shrestha, Chao-Hsuan Chen, Zuo‐Min Tsai, Yiming Li, J. Tarng, S. Samukawa
Electrical characteristics of lattice matched AlInGaN/GaN high electron mobility transistors with different barrier engineering was studied theoretically by solving drift diffusion equation. The results of the study thoroughly disclose the mitigation of induced polarization charge on lowering Al and In content in barrier resulting in a positive shift of threshold voltage with huge deduction on drain current. The newly designed lattice match double A10.54 In0.12 Ga0.34 N/ Al0.18 In0.04 Ga0.78 N barrier recess gate HEMT helps to boost the drain current by reducing the access resistance and enhancing the polarization charge density. The proposed HEMT exalted current density and transconductance by two times with significant shift of threshold voltage in positive axis than that of single barrier structure. Conclusively, the high performance novel double barrier recess gate E-mode HEMT will be key for real and efficient high power switching application.
通过求解漂移扩散方程,从理论上研究了不同势垒工程下晶格匹配AlInGaN/GaN高电子迁移率晶体管的电学特性。研究结果充分揭示了降低势垒中Al和In含量对诱导极化电荷的抑制作用,导致阈值电压正向偏移,漏极电流大幅减少。新设计的晶格匹配双A10.54 In0.12 Ga0.34 N/ Al0.18 In0.04 Ga0.78 N势垒凹槽栅极HEMT通过降低通路电阻和提高极化电荷密度来提高漏极电流。与单势垒结构相比,HEMT的电流密度和跨导提高了两倍,且阈值电压在正轴上有显著的位移。总之,高性能的新型双势垒凹槽栅e模HEMT将是实现真正高效的大功率开关应用的关键。
{"title":"Barrier Engineering of Lattice Matched AlInGaN/ GaN Heterostructure Toward High Performance E-mode Operation","authors":"N. Shrestha, Chao-Hsuan Chen, Zuo‐Min Tsai, Yiming Li, J. Tarng, S. Samukawa","doi":"10.1109/SISPAD.2019.8870407","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870407","url":null,"abstract":"Electrical characteristics of lattice matched AlInGaN/GaN high electron mobility transistors with different barrier engineering was studied theoretically by solving drift diffusion equation. The results of the study thoroughly disclose the mitigation of induced polarization charge on lowering Al and In content in barrier resulting in a positive shift of threshold voltage with huge deduction on drain current. The newly designed lattice match double A10.54 In0.12 Ga0.34 N/ Al0.18 In0.04 Ga0.78 N barrier recess gate HEMT helps to boost the drain current by reducing the access resistance and enhancing the polarization charge density. The proposed HEMT exalted current density and transconductance by two times with significant shift of threshold voltage in positive axis than that of single barrier structure. Conclusively, the high performance novel double barrier recess gate E-mode HEMT will be key for real and efficient high power switching application.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"25 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81004293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of quantum dot based single-photon sources using the Schrödinger-Poisson-Drift-Diffusion-Lindblad system 利用Schrödinger-Poisson-Drift-Diffusion-Lindblad系统模拟基于量子点的单光子源
M. Kantner, T. Koprucki, H. Wünsche, U. Bandelow
The device-scale simulation of electrically driven quantum light sources based on semiconductor quantum dots requires a combination of the (semi-)classical semiconductor device equations with cavity quantum electrodynamics. We present a comprehensive quantum-classical simulation approach that self-consistently couples the (semi-)classical drift-diffusion system to a Lindblad-type quantum master equation. This allows to describe the spatially resolved carrier transport in complex, multi-dimensional device geometries along with the fully quantum-mechanical light-matter interaction in the quantum dot-cavity system. The latter gives access to important quantum optical figures of merit, in particular the second-order correlation function of the emitted radiation. In order to account for the quantum confined Stark effect in the device’s internal electric field, the system is solved along with a Schrödinger–Poisson problem, that describes the envelope wave functions and energy levels of the quantum dot carriers. The approach is demonstrated by numerical simulations of a single-photon emitting diode.
基于半导体量子点的电驱动量子光源的器件级模拟需要将(半)经典半导体器件方程与腔量子电动力学相结合。我们提出了一种综合的量子经典模拟方法,该方法将(半)经典漂移扩散系统自洽地耦合到lindblade型量子主方程。这允许描述复杂的空间分辨载流子输运,多维器件几何以及量子点腔系统中完全量子力学的光-物质相互作用。后者提供了获得重要的量子光学数字的机会,特别是发射辐射的二阶相关函数。为了解释设备内部电场中的量子受限斯塔克效应,该系统与Schrödinger-Poisson问题一起解决,该问题描述了量子点载流子的包络波函数和能级。通过单光子发光二极管的数值模拟验证了该方法的有效性。
{"title":"Simulation of quantum dot based single-photon sources using the Schrödinger-Poisson-Drift-Diffusion-Lindblad system","authors":"M. Kantner, T. Koprucki, H. Wünsche, U. Bandelow","doi":"10.1109/SISPAD.2019.8870459","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870459","url":null,"abstract":"The device-scale simulation of electrically driven quantum light sources based on semiconductor quantum dots requires a combination of the (semi-)classical semiconductor device equations with cavity quantum electrodynamics. We present a comprehensive quantum-classical simulation approach that self-consistently couples the (semi-)classical drift-diffusion system to a Lindblad-type quantum master equation. This allows to describe the spatially resolved carrier transport in complex, multi-dimensional device geometries along with the fully quantum-mechanical light-matter interaction in the quantum dot-cavity system. The latter gives access to important quantum optical figures of merit, in particular the second-order correlation function of the emitted radiation. In order to account for the quantum confined Stark effect in the device’s internal electric field, the system is solved along with a Schrödinger–Poisson problem, that describes the envelope wave functions and energy levels of the quantum dot carriers. The approach is demonstrated by numerical simulations of a single-photon emitting diode.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"22 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89215886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Simulation of Chemically Reacting Flow in Plasma Native Oxide Cleaning Process 等离子体原生氧化物清洗过程中化学反应流的模拟
S. Ryu, Yunho Kim, Dylan Pederson, Jonghyun Lee, Young-Kwang Kim, L. Raja, Jiho Uh, Sangjin Choi
A plasma native oxide cleaning process is widely used on the semiconductor production line to remove oxide impurities on silicon surfaces of an wafer. In this study, a flow simulation with microwave plasma species has been conducted to analyze the flow characteristics in a showerhead that affect the batch uniformity in the process. In particular, the distributions of temperature and mass flow rate of the gas as well as the number density of hydrogen radicals at the showerhead hole outlets were compared for different showerhead designs by using computational fluid dynamics. The distribution of gas temperature at the hole outlets was found to be inversely proportional to one of gas mass flow rate by the simulation results. However, mass flow rate distribution for the total gas shows a different trend from one of hydrogen radicals in the showerhead hole outlets. The showerhead design with low temperature gradient also showed a more uniform mass flow rate profile at the hole outlets, which was validated by the simulation results.
等离子体原生氧化物清洗工艺在半导体生产线上广泛应用于去除硅片硅表面的氧化物杂质。本文采用微波等离子体流场模拟方法,分析了淋浴喷头内的流动特性对间歇均匀性的影响。利用计算流体力学的方法,对不同设计的喷头孔出口处的温度分布、气体质量流率分布以及氢自由基数密度分布进行了比较。模拟结果表明,孔出口气体温度分布与气体质量流量分布成反比。但总气体的质量流率分布与喷头孔出口氢自由基的质量流率分布有不同的趋势。低温度梯度的喷头设计在孔出口处的质量流量分布更为均匀,仿真结果验证了这一点。
{"title":"Simulation of Chemically Reacting Flow in Plasma Native Oxide Cleaning Process","authors":"S. Ryu, Yunho Kim, Dylan Pederson, Jonghyun Lee, Young-Kwang Kim, L. Raja, Jiho Uh, Sangjin Choi","doi":"10.1109/sispad.2019.8870447","DOIUrl":"https://doi.org/10.1109/sispad.2019.8870447","url":null,"abstract":"A plasma native oxide cleaning process is widely used on the semiconductor production line to remove oxide impurities on silicon surfaces of an wafer. In this study, a flow simulation with microwave plasma species has been conducted to analyze the flow characteristics in a showerhead that affect the batch uniformity in the process. In particular, the distributions of temperature and mass flow rate of the gas as well as the number density of hydrogen radicals at the showerhead hole outlets were compared for different showerhead designs by using computational fluid dynamics. The distribution of gas temperature at the hole outlets was found to be inversely proportional to one of gas mass flow rate by the simulation results. However, mass flow rate distribution for the total gas shows a different trend from one of hydrogen radicals in the showerhead hole outlets. The showerhead design with low temperature gradient also showed a more uniform mass flow rate profile at the hole outlets, which was validated by the simulation results.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"263 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88811484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single Event Transient Compact Model for FDSOI MOSFETs Taking Bipolar Amplification and Circuit Level Arbitrary Generation Into Account 考虑双极放大和电路电平任意产生的FDSOI mosfet单事件瞬态紧凑模型
N. Rostand, S. Martinie, J. Lacord, O. Rozeau, T. Poiroux, G. Hubert
Single Event Transients (SET) are ionizing particles induced current pulses which are able to generate soft errors in CMOS circuits. In Silicon-on-Insulator (SOI) technologies, bipolar amplification phenomena is more significant due to presence of the Burried Oxide (BOX), which is detrimental to soft errors sensitivity. State of the art FDSOI SET models account for bipolar amplification through a dynamic pre-factor. This approach is mainly empirical and not compact. In this work, we propose a SET compact model for FDSOI MOSFETs including a physical modeling of bipolar amplification. Results are validated through TCAD simulations. A circuit level approach is proposed considering arbitrary generation within functional SRAM cell. This approach allows more realistic Single Event Upset (SEU) prediction and we show how circuit level generation can influence SEU prediction.
单事件瞬变(SET)是一种在CMOS电路中产生软误差的电离粒子感应电流脉冲。在绝缘体上硅(SOI)技术中,由于氧化层(BOX)的存在,双极放大现象更加明显,这对软误差灵敏度有害。最先进的FDSOI SET模型通过一个动态预因子来考虑双极放大。这种方法主要是经验性的,并不紧凑。在这项工作中,我们提出了一个FDSOI mosfet的SET紧凑模型,包括双极放大的物理建模。通过TCAD仿真验证了结果。提出了一种考虑功能SRAM单元内任意生成的电路级方法。这种方法允许更现实的单事件干扰(SEU)预测,我们展示了电路电平生成如何影响SEU预测。
{"title":"Single Event Transient Compact Model for FDSOI MOSFETs Taking Bipolar Amplification and Circuit Level Arbitrary Generation Into Account","authors":"N. Rostand, S. Martinie, J. Lacord, O. Rozeau, T. Poiroux, G. Hubert","doi":"10.1109/SISPAD.2019.8870520","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870520","url":null,"abstract":"Single Event Transients (SET) are ionizing particles induced current pulses which are able to generate soft errors in CMOS circuits. In Silicon-on-Insulator (SOI) technologies, bipolar amplification phenomena is more significant due to presence of the Burried Oxide (BOX), which is detrimental to soft errors sensitivity. State of the art FDSOI SET models account for bipolar amplification through a dynamic pre-factor. This approach is mainly empirical and not compact. In this work, we propose a SET compact model for FDSOI MOSFETs including a physical modeling of bipolar amplification. Results are validated through TCAD simulations. A circuit level approach is proposed considering arbitrary generation within functional SRAM cell. This approach allows more realistic Single Event Upset (SEU) prediction and we show how circuit level generation can influence SEU prediction.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"26 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87264064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors 三栅极纳米线晶体管迁移率预测的尺度感知TCAD参数提取方法
C. Medina-Bailón, T. Dutta, F. Klüpfel, S. Barraud, V. Georgiev, J. Lorenz, A. Asenov
In the simulation framework for the study of aggressively scaled CMOS transistors, it is mandatory to capture the dependence of the model parameters on the physical structure of the devices in order to perform predictive device simulations. TCAD models typically have tunable parameters to characterize physical phenomena that ultimately determine different measurable electrical quantities. In this work, we extract the density gradient quantum correction parameters and Monte Carlo scattering parameters in order to fit the C-V characteristics and the low field mobility to experimental data in the case of Tri-gate nanowire transistors, which are of high importance for the semiconductor industry. Once the relevant parameters are calibrated, we have obtained a good agreement between the experimentally measured mobility and the predictions from the Monte Carlo module of the Synopsys TCAD tool Garand.
在研究大规模缩放CMOS晶体管的仿真框架中,必须捕获模型参数对器件物理结构的依赖性,以便执行预测性器件仿真。TCAD模型通常具有可调参数,以表征最终确定不同可测量电量的物理现象。在这项工作中,我们提取了密度梯度量子校正参数和蒙特卡罗散射参数,以便将三栅极纳米线晶体管的C-V特性和低场迁移率拟合到实验数据中,这对半导体工业具有重要意义。一旦校正了相关参数,我们就得到了实验测量的迁移率与从Synopsys TCAD工具Garand的蒙特卡罗模块预测的迁移率之间的良好一致性。
{"title":"Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors","authors":"C. Medina-Bailón, T. Dutta, F. Klüpfel, S. Barraud, V. Georgiev, J. Lorenz, A. Asenov","doi":"10.1109/SISPAD.2019.8870556","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870556","url":null,"abstract":"In the simulation framework for the study of aggressively scaled CMOS transistors, it is mandatory to capture the dependence of the model parameters on the physical structure of the devices in order to perform predictive device simulations. TCAD models typically have tunable parameters to characterize physical phenomena that ultimately determine different measurable electrical quantities. In this work, we extract the density gradient quantum correction parameters and Monte Carlo scattering parameters in order to fit the C-V characteristics and the low field mobility to experimental data in the case of Tri-gate nanowire transistors, which are of high importance for the semiconductor industry. Once the relevant parameters are calibrated, we have obtained a good agreement between the experimentally measured mobility and the predictions from the Monte Carlo module of the Synopsys TCAD tool Garand.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"6 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86527021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Quantum Element Reduced Order Model 量子元降阶模型
M. Cheng
A reduced-order model for quantum eigenvalue problems developed previously is revised and combined with the domain decomposition method to construct the quantum element method (QEM). The basic idea of the QEM is to partition a quantum domain structure into several subdomains or elements. Each element is projected onto a functional space using the proper orthogonal decommission. These elements are then combined together to construct the whole domain structure. The proposed QEM has been demonstrated in 2 quantum well structures constructed with several elements. The study illustrates that the QEM is capable of offering accurate prediction of wave functions and quantum eigenenergies with a substantial reduction in the numerical degrees of freedom compared to direct numerical simulation of the Schrödinger equation.
修正了先前建立的量子特征值问题的降阶模型,并将其与区域分解方法相结合,构造了量子元方法。QEM的基本思想是将量子域结构划分为若干子域或元素。每个元素被投影到一个功能空间使用适当的正交退役。然后将这些元素组合在一起以构建整个领域结构。所提出的量子力学在两个由多个元素组成的量子阱结构中得到了验证。研究表明,与Schrödinger方程的直接数值模拟相比,QEM能够提供波函数和量子本征能量的准确预测,其数值自由度大大降低。
{"title":"A Quantum Element Reduced Order Model","authors":"M. Cheng","doi":"10.1109/SISPAD.2019.8870453","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870453","url":null,"abstract":"A reduced-order model for quantum eigenvalue problems developed previously is revised and combined with the domain decomposition method to construct the quantum element method (QEM). The basic idea of the QEM is to partition a quantum domain structure into several subdomains or elements. Each element is projected onto a functional space using the proper orthogonal decommission. These elements are then combined together to construct the whole domain structure. The proposed QEM has been demonstrated in 2 quantum well structures constructed with several elements. The study illustrates that the QEM is capable of offering accurate prediction of wave functions and quantum eigenenergies with a substantial reduction in the numerical degrees of freedom compared to direct numerical simulation of the Schrödinger equation.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"17 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84742068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
期刊
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1