Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870462
L. Filipovic
Two models for ALD of TiN and TiO2 are incorporated in an in-house level set based topography simulator, ViennaTS. While the models are based on 1D surface kinetics, here they are extended to handle 2D and 3D geometries by applying single particle Monte Carlo ray tracing. The particle flux and sticking coefficients are used to calibrate the surface adsorption of precursors and ultimately to calculate the resulting surface velocity. The TiO2 ALD model is based on the use of TTIP and H2O precursors and includes all surface kinetics taking place during deposition. In contract, the model for the deposition of TiN is somewhat simplified by ignoring the purge steps which are introduced after surface exposure to either precursor. The simplified model is then applied to reproduce experimental results from plasma enhanced ALD process for TiN deposition from TDMAT and H2-N2 plasma precursors.
{"title":"Modeling and Simulation of Atomic Layer Deposition","authors":"L. Filipovic","doi":"10.1109/SISPAD.2019.8870462","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870462","url":null,"abstract":"Two models for ALD of TiN and TiO2 are incorporated in an in-house level set based topography simulator, ViennaTS. While the models are based on 1D surface kinetics, here they are extended to handle 2D and 3D geometries by applying single particle Monte Carlo ray tracing. The particle flux and sticking coefficients are used to calibrate the surface adsorption of precursors and ultimately to calculate the resulting surface velocity. The TiO2 ALD model is based on the use of TTIP and H2O precursors and includes all surface kinetics taking place during deposition. In contract, the model for the deposition of TiN is somewhat simplified by ignoring the purge steps which are introduced after surface exposure to either precursor. The simplified model is then applied to reproduce experimental results from plasma enhanced ALD process for TiN deposition from TDMAT and H2-N2 plasma precursors.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"44 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84586070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/sispad.2019.8870478
{"title":"SISPAD 2019 Cover Page","authors":"","doi":"10.1109/sispad.2019.8870478","DOIUrl":"https://doi.org/10.1109/sispad.2019.8870478","url":null,"abstract":"","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"217 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74174878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870479
Jaehee Choi, U. Monga, Yonghee Park, H. Shim, U. Kwon, S. Pae, D. Kim
This paper investigates the impact of BEOL design on device and backend reliability – HCI, BTI, EM – due to dependence of self-heating on BEOL in highly-scaled FinFETs. Our analysis indicates that due to poor thermal coupling to substrate – in the thin fin body devices – a large part of heat flows out of BEOL. This makes self-heating, and thus device (FEOL) temperature, very sensitive to BEOL design. The heat flow through BEOL also significantly increases the metal and via temperatures. The increased temperature negatively affects the overall reliability, and one of the ways to mitigate device degradation is optimization of BEOL design.
{"title":"Impact of BEOL Design on Self-heating and Reliability in Highly-scaled FinFETs","authors":"Jaehee Choi, U. Monga, Yonghee Park, H. Shim, U. Kwon, S. Pae, D. Kim","doi":"10.1109/SISPAD.2019.8870479","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870479","url":null,"abstract":"This paper investigates the impact of BEOL design on device and backend reliability – HCI, BTI, EM – due to dependence of self-heating on BEOL in highly-scaled FinFETs. Our analysis indicates that due to poor thermal coupling to substrate – in the thin fin body devices – a large part of heat flows out of BEOL. This makes self-heating, and thus device (FEOL) temperature, very sensitive to BEOL design. The heat flow through BEOL also significantly increases the metal and via temperatures. The increased temperature negatively affects the overall reliability, and one of the ways to mitigate device degradation is optimization of BEOL design.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"13 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83717821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870492
S. Guerrieri, F. Bonani, G. Ghione
The Green’s Function based TCAD device variability analysis is extended to allow for temperature-dependent variability, with negligible overhead in terms of simulation time with respect to fixed temperature simulations. We provide temperature and bias-dependent 3D variability analysis of the DC current for a FinFET structure from the 22 nm node, showing how to predict and mitigate the effects of poor thermal management. Based on the quasi-stationary assumption, preliminary analysis of self-heating effects of a FinFET medium power amplifier is also presented.
{"title":"TCAD analysis of FinFET temperature-dependent variability for analog applications","authors":"S. Guerrieri, F. Bonani, G. Ghione","doi":"10.1109/SISPAD.2019.8870492","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870492","url":null,"abstract":"The Green’s Function based TCAD device variability analysis is extended to allow for temperature-dependent variability, with negligible overhead in terms of simulation time with respect to fixed temperature simulations. We provide temperature and bias-dependent 3D variability analysis of the DC current for a FinFET structure from the 22 nm node, showing how to predict and mitigate the effects of poor thermal management. Based on the quasi-stationary assumption, preliminary analysis of self-heating effects of a FinFET medium power amplifier is also presented.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"95 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76658459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/sispad.2019.8870452
Y. Long, Jun Z. Huang, Zhongming Wei, Jun-Wei Luo, Xiangwei Jiang
The gate-controlled compressive strain induced by piezoelectric layers (piezo-layers) is used to suppress the OFF current of n-type GaAs piezoelectric FinFETs (Piezo-FinFETs). Quantum ballistic transport of n-type GaAs Piezo-FinFETs is modeled by the self-consistent Schrödinger–Poisson system. Our results suggest that n-type GaAs Piezo-FinFETs reduce OFF current by an order of magnitude for both high performance and low power applications compared with their counterparts without piezo-layers. The influences of device orientations on device performance is also investigated. The optimal device orientation of n-type GaAs Piezo-FinFETs is on the crystal surface (111).
{"title":"OFF Current Suppression by Gate-gontrolled Strain in The N-type GaAs Piezoelectric FinFETs","authors":"Y. Long, Jun Z. Huang, Zhongming Wei, Jun-Wei Luo, Xiangwei Jiang","doi":"10.1109/sispad.2019.8870452","DOIUrl":"https://doi.org/10.1109/sispad.2019.8870452","url":null,"abstract":"The gate-controlled compressive strain induced by piezoelectric layers (piezo-layers) is used to suppress the OFF current of n-type GaAs piezoelectric FinFETs (Piezo-FinFETs). Quantum ballistic transport of n-type GaAs Piezo-FinFETs is modeled by the self-consistent Schrödinger–Poisson system. Our results suggest that n-type GaAs Piezo-FinFETs reduce OFF current by an order of magnitude for both high performance and low power applications compared with their counterparts without piezo-layers. The influences of device orientations on device performance is also investigated. The optimal device orientation of n-type GaAs Piezo-FinFETs is on the crystal surface (111).","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"38 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87460490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870398
Qinqiang Zhang, T. Kudo, Jowesh Gounder, Ying Chen, Ken Suzuki, H. Miura
The electronic band structure (band gap) and electronic transmission properties of dumbbell-shape graphene nanoribbons (DS-GNRs), which consists of a thinner semiconductive GNR and two wider metallic GNRs at its both ends, was theoretically investigated using first-principles calculation to clarify the dominant controlling factors of their electronic performance for their applications to various smart sensors. The electronic properties of the DS-GNR was found to vary drastically depending on the combination of the total number of carbon atoms along the width direction of each portion, the length of the semiconductive portion, the width of the metallic portion, and so on.
{"title":"Theoretical Study of the Edge Effect of Dumbbellshape Graphene Nanoribbon with a Dual Electronic Properties by First-principle Calculations","authors":"Qinqiang Zhang, T. Kudo, Jowesh Gounder, Ying Chen, Ken Suzuki, H. Miura","doi":"10.1109/SISPAD.2019.8870398","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870398","url":null,"abstract":"The electronic band structure (band gap) and electronic transmission properties of dumbbell-shape graphene nanoribbons (DS-GNRs), which consists of a thinner semiconductive GNR and two wider metallic GNRs at its both ends, was theoretically investigated using first-principles calculation to clarify the dominant controlling factors of their electronic performance for their applications to various smart sensors. The electronic properties of the DS-GNR was found to vary drastically depending on the combination of the total number of carbon atoms along the width direction of each portion, the length of the semiconductive portion, the width of the metallic portion, and so on.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"46 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91286777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870469
F. A. Herrera, M. Miura-Mattausch, H. Kikuchihara, T. Iizuka, H. Mattausch, H. Takatsuka
We have modeled MOSFET-device aging based on the trap-density increase, which is included in the Poisson equation to consider aging explicitly and physically correct. To preserve consistency, the Poisson equation is solved iteratively. Measured temperature dependence of aged I-V characteristics are well reproduced with implementation of this aging model into the industry-standard model HiSIM. The extracted physical device quantities with the developed model from measurements have been investigated to characterize the aging features. It is observed that the activation energy Ea as a function of Vgs is nearly identical for non-aged and aged devices. This concludes that the temperature dependence of aging originates mostly from the temperature-dependent electrostatic potential, resulting in negligible temperature dependency of extracted trap density Ntrap. To generalize the conclusion, 2D-device simulation is investigated for a double-gate (DG) MOSFET with increased stress-induced trap density. The same results as obtained from measurements are achieved, namely the activation energy is nearly identical for either non-aged or aged cases. This concludes that the temperature dependence of device aging can be accurately predicted using the temperature-dependent I-V characteristics of non-aged device.
{"title":"Modeling of Temperature-Dependent MOSFET Aging","authors":"F. A. Herrera, M. Miura-Mattausch, H. Kikuchihara, T. Iizuka, H. Mattausch, H. Takatsuka","doi":"10.1109/SISPAD.2019.8870469","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870469","url":null,"abstract":"We have modeled MOSFET-device aging based on the trap-density increase, which is included in the Poisson equation to consider aging explicitly and physically correct. To preserve consistency, the Poisson equation is solved iteratively. Measured temperature dependence of aged I-V characteristics are well reproduced with implementation of this aging model into the industry-standard model HiSIM. The extracted physical device quantities with the developed model from measurements have been investigated to characterize the aging features. It is observed that the activation energy Ea as a function of Vgs is nearly identical for non-aged and aged devices. This concludes that the temperature dependence of aging originates mostly from the temperature-dependent electrostatic potential, resulting in negligible temperature dependency of extracted trap density Ntrap. To generalize the conclusion, 2D-device simulation is investigated for a double-gate (DG) MOSFET with increased stress-induced trap density. The same results as obtained from measurements are achieved, namely the activation energy is nearly identical for either non-aged or aged cases. This concludes that the temperature dependence of device aging can be accurately predicted using the temperature-dependent I-V characteristics of non-aged device.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"27 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81333621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870353
A. Korzenietz, F. Hille, F. Niedernostheide, C. Sandow, G. Wachutka, G. Schrag
Hydrogen-related donors can be advantageously used in IGBTs and power diodes with a view to creating field-stop layers and to optimising the electrical performance. In this work, the influence of hydrogen-related donors on the on-state plasma profile in field-stop IGBTs is analysed by means of free-carrier absorption measurements. For these investigations, dedicated IGBT test structures were used, which had been adapted to the specific properties of the employed measurement set-up. Two different hydrogen-related donor profiles were implanted into these IGBT samples and, subsequently, measurements with different current densities were compared to 2D TCAD numerical simulations. In the next step, the simulation models were adjusted, with respect to carrier lifetime and mobility to reflect the impact of a possible variation of these properties.
{"title":"TCAD Simulations Combined with Free Carrier Absorption Experiments Revealing the Physical Nature of Hydrogen-Related Donors in IGBTs","authors":"A. Korzenietz, F. Hille, F. Niedernostheide, C. Sandow, G. Wachutka, G. Schrag","doi":"10.1109/SISPAD.2019.8870353","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870353","url":null,"abstract":"Hydrogen-related donors can be advantageously used in IGBTs and power diodes with a view to creating field-stop layers and to optimising the electrical performance. In this work, the influence of hydrogen-related donors on the on-state plasma profile in field-stop IGBTs is analysed by means of free-carrier absorption measurements. For these investigations, dedicated IGBT test structures were used, which had been adapted to the specific properties of the employed measurement set-up. Two different hydrogen-related donor profiles were implanted into these IGBT samples and, subsequently, measurements with different current densities were compared to 2D TCAD numerical simulations. In the next step, the simulation models were adjusted, with respect to carrier lifetime and mobility to reflect the impact of a possible variation of these properties.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"199 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80062168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870406
M. Pala, D. Esseni
The active region of many modern electron devices consists of semiconductors structured at truly nanometric dimensions, either as ultra-thin-body FETs (UTRFETs), or as 3D architectures such as Fin-FETs, multi-gate FETs (MuGFETs), and nanowire (NW) FETs [1]. Quantum mechanical effects have thus become prominent not only in terms of subband splitting [2], but also in terms of source-drain tunnnelling in CMOS FEFs [3], [4], [5], and band-to-band-tunnnelling (BTBT) in Tunnel FETs (TFETs) [6], [7]. The relevance of quantum effects in nanoscale FETs is also witnessed by the fact hat CMOS based quantum dots have been proposed as a platform for quantum computing [8].
{"title":"Full band quantum transport modelling with EP and NEGF methods; application to nanowire transistors","authors":"M. Pala, D. Esseni","doi":"10.1109/SISPAD.2019.8870406","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870406","url":null,"abstract":"The active region of many modern electron devices consists of semiconductors structured at truly nanometric dimensions, either as ultra-thin-body FETs (UTRFETs), or as 3D architectures such as Fin-FETs, multi-gate FETs (MuGFETs), and nanowire (NW) FETs [1]. Quantum mechanical effects have thus become prominent not only in terms of subband splitting [2], but also in terms of source-drain tunnnelling in CMOS FEFs [3], [4], [5], and band-to-band-tunnnelling (BTBT) in Tunnel FETs (TFETs) [6], [7]. The relevance of quantum effects in nanoscale FETs is also witnessed by the fact hat CMOS based quantum dots have been proposed as a platform for quantum computing [8].","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"2 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88268961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/sispad.2019.8870376
{"title":"SISPAD 2019 Welcome Page","authors":"","doi":"10.1109/sispad.2019.8870376","DOIUrl":"https://doi.org/10.1109/sispad.2019.8870376","url":null,"abstract":"","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78704962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：