Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870358
Xujiao Gao, G. Hennigan, L. Musson, Andy Huang, Mihai Negoita
We present a comprehensive physics investigation of electrothermal effects in III-V heterojunction bipolar transistors (HBTs) via extensive Technology Computer Aided Design (TCAD) simulation and modeling. We show for the first time that the negative differential resistances of the common-emitter output responses in InGaP/GaAs HBTs are caused not only by the well-known carrier mobility reduction, but more importantly also by the increased base-to-emitter hole back injection, as the device temperature increases from self-heating. Both self-heating and impact ionization can cause fly-backs in the output responses under constant base-emitter voltages. We find that the fly-back behavior is due to competing processes of carrier recombination and self-heating or impact ionization induced carrier generation. These findings will allow us to understand and potentially improve the safe operating areas and circuit compact models of InGaP/GaAs HBTs.
{"title":"Simulation and Investigation of Electrothermal Effects in Heterojunction Bipolar Transistors","authors":"Xujiao Gao, G. Hennigan, L. Musson, Andy Huang, Mihai Negoita","doi":"10.1109/SISPAD.2019.8870358","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870358","url":null,"abstract":"We present a comprehensive physics investigation of electrothermal effects in III-V heterojunction bipolar transistors (HBTs) via extensive Technology Computer Aided Design (TCAD) simulation and modeling. We show for the first time that the negative differential resistances of the common-emitter output responses in InGaP/GaAs HBTs are caused not only by the well-known carrier mobility reduction, but more importantly also by the increased base-to-emitter hole back injection, as the device temperature increases from self-heating. Both self-heating and impact ionization can cause fly-backs in the output responses under constant base-emitter voltages. We find that the fly-back behavior is due to competing processes of carrier recombination and self-heating or impact ionization induced carrier generation. These findings will allow us to understand and potentially improve the safe operating areas and circuit compact models of InGaP/GaAs HBTs.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"84 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80875915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870477
B. Venitucci, Jing Li, L. Bourdet, Y. Niquet
We review our recent results on the modeling of silicon spin qubits. We describe, in particular, the methodology we have set-up for the simulation of these devices, and give some illustrations on silicon-on-insulator (SOI) qubits. We discuss, in particular, the electrical manipulation of electron and hole spins.
{"title":"Modeling Silicon CMOS devices for quantum computing","authors":"B. Venitucci, Jing Li, L. Bourdet, Y. Niquet","doi":"10.1109/SISPAD.2019.8870477","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870477","url":null,"abstract":"We review our recent results on the modeling of silicon spin qubits. We describe, in particular, the methodology we have set-up for the simulation of these devices, and give some illustrations on silicon-on-insulator (SOI) qubits. We discuss, in particular, the electrical manipulation of electron and hole spins.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"525 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78156152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/sispad.2019.8870438
Naoya Uene, T. Mabuchi, M. Zaitsu, Shigeo Yasuhara, T. Tokumasu
We calculate a deposition process of hydrogenated amorphous silicon (a-Si:H) films on a silicon (100) substrate by reactive force-field molecular dynamics simulations. The influences of (a) substrate temperatures and (b) coverage of hydrogen atoms on the substrate on the adsorption probability are investigated, and it is found out that (a) the adsorption probability is almost constant for SiH2 and SiH3, but decrease with increase in the substrate temperature for SiH4, (b) it decreases with the increase in hydrogen coverage.
{"title":"Molecular Dyanamics Simulation of Thermal Chemical Vapor Deposition for Hydrogenated Amorphous Silicon on Si (100) Substrate by Reactive Force-Field","authors":"Naoya Uene, T. Mabuchi, M. Zaitsu, Shigeo Yasuhara, T. Tokumasu","doi":"10.1109/sispad.2019.8870438","DOIUrl":"https://doi.org/10.1109/sispad.2019.8870438","url":null,"abstract":"We calculate a deposition process of hydrogenated amorphous silicon (a-Si:H) films on a silicon (100) substrate by reactive force-field molecular dynamics simulations. The influences of (a) substrate temperatures and (b) coverage of hydrogen atoms on the substrate on the adsorption probability are investigated, and it is found out that (a) the adsorption probability is almost constant for SiH2 and SiH3, but decrease with increase in the substrate temperature for SiH4, (b) it decreases with the increase in hydrogen coverage.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"13 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74011633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/sispad.2019.8870440
C. Teo, Kain Lu Low, V. Narang, A. Thean
In this work, we present a unique approach of combining TCAD modelling and machine learning to detect the defect locations of a bridging defect in a single-fin FinFET. The prediction of the defect location is guided by the predictive model consisting of Random Forest algorithm which is trained with the measureable electrical attributes from the I-V. High accuracy in predicting the defect location is achieved by the proposed scheme which can further enhance the FA success rate, expediting the cycle of design to product.
{"title":"TCAD-Enabled Machine Learning Defect Prediction to Accelerate Advanced Semiconductor Device Failure Analysis","authors":"C. Teo, Kain Lu Low, V. Narang, A. Thean","doi":"10.1109/sispad.2019.8870440","DOIUrl":"https://doi.org/10.1109/sispad.2019.8870440","url":null,"abstract":"In this work, we present a unique approach of combining TCAD modelling and machine learning to detect the defect locations of a bridging defect in a single-fin FinFET. The prediction of the defect location is guided by the predictive model consisting of Random Forest algorithm which is trained with the measureable electrical attributes from the I-V. High accuracy in predicting the defect location is achieved by the proposed scheme which can further enhance the FA success rate, expediting the cycle of design to product.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"2 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74316843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870404
Ming-Yi Lee, Min-Hui Chuang, Yiming Li, S. Samukawa
The electronic and phononic band structure of silicon nanowires embedded in SiGeo.3 is calculated and used to investigate its effect on the thermoelectric properties by Landauer approach. The contribution from elec-tron/hole on power factor and electronic thermal con-ductance is less than that from phonons on lattice ther-mal conductance.
{"title":"Thermal Conductivity of Silicon Nanowire Using Landauer Approach for Thermoelectric Applications","authors":"Ming-Yi Lee, Min-Hui Chuang, Yiming Li, S. Samukawa","doi":"10.1109/SISPAD.2019.8870404","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870404","url":null,"abstract":"The electronic and phononic band structure of silicon nanowires embedded in SiGeo.3 is calculated and used to investigate its effect on the thermoelectric properties by Landauer approach. The contribution from elec-tron/hole on power factor and electronic thermal con-ductance is less than that from phonons on lattice ther-mal conductance.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"65 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80970148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870357
A. Brown, Liping Wang, P. Asenov, F. Klüpfel, B. Cheng, S. Martinie, O. Rozeau, S. Barraud, J. Barbe, C. Millar, J. Lorenz
A simulation flow for design-technology co-optimisation using 5nm stacked nanowires is presented. The effect of variation in key process parameters on the behaviour of benchmark circuits is examined through the use of variability-aware compact models, accounting for both global and local variability.
{"title":"From devices to circuits: modelling the performance of 5nm nanosheets","authors":"A. Brown, Liping Wang, P. Asenov, F. Klüpfel, B. Cheng, S. Martinie, O. Rozeau, S. Barraud, J. Barbe, C. Millar, J. Lorenz","doi":"10.1109/SISPAD.2019.8870357","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870357","url":null,"abstract":"A simulation flow for design-technology co-optimisation using 5nm stacked nanowires is presented. The effect of variation in key process parameters on the behaviour of benchmark circuits is examined through the use of variability-aware compact models, accounting for both global and local variability.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"15 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85242311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870461
A. Ghetti
The self-force is a specific problem of self-consistent Monte Carlo-Poisson simulation resulting in an un-physical field component acting on a particle coming from the particle itself (the self-force). Several approaches have been proposed in literature to mitigate this problem, but all of them suffer to some extent of approximations and/or limitations. In this paper we propose a new and mathematically exact correction of the self-force problem based on a numerical approach. Although computationally expensive, it has no restriction and can be always applied. The new method has been tested on the difficult problem of plasma oscillation simulation providing the expected plasma energy from theory. Moreover, the same mathematical framework introduced here for the self-force correction can be readily applied also for the exact calculation of the reference force in the Particle-Particle-Particle-Mesh (P3M) method. The accuracy of such approach to P3M method is demonstrated by simulating the bulk low field mobility dependence on doping concentration.
{"title":"Exact Correction of the Self-Force Problem in Monte Carlo Device Simulation","authors":"A. Ghetti","doi":"10.1109/SISPAD.2019.8870461","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870461","url":null,"abstract":"The self-force is a specific problem of self-consistent Monte Carlo-Poisson simulation resulting in an un-physical field component acting on a particle coming from the particle itself (the self-force). Several approaches have been proposed in literature to mitigate this problem, but all of them suffer to some extent of approximations and/or limitations. In this paper we propose a new and mathematically exact correction of the self-force problem based on a numerical approach. Although computationally expensive, it has no restriction and can be always applied. The new method has been tested on the difficult problem of plasma oscillation simulation providing the expected plasma energy from theory. Moreover, the same mathematical framework introduced here for the self-force correction can be readily applied also for the exact calculation of the reference force in the Particle-Particle-Particle-Mesh (P3M) method. The accuracy of such approach to P3M method is demonstrated by simulating the bulk low field mobility dependence on doping concentration.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"61 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85551391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870471
M. Miura-Mattausch
This paper summarizes briefly compact-model development history, which is characterized by the evolution into the role as a bridge between devices and circuits. It is demonstrated that the task of predicting circuitry performance accurately has been realized by considering the microscopic features of the device phenomena in the compact model, which had been previously treated only macroscopically.
{"title":"Compact Modeling Perspetive – Bridge to Industrial Applications","authors":"M. Miura-Mattausch","doi":"10.1109/SISPAD.2019.8870471","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870471","url":null,"abstract":"This paper summarizes briefly compact-model development history, which is characterized by the evolution into the role as a bridge between devices and circuits. It is demonstrated that the task of predicting circuitry performance accurately has been realized by considering the microscopic features of the device phenomena in the compact model, which had been previously treated only macroscopically.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"6 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87877681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870396
J. Kumar, A. Meersha, Ansh, M. Shrivastava
In this work we have studied bonding nature of Graphene and Phosphorene with metal (Pd) followed by carrier transport behavior and contact resistance engineering across the metal-Graphene and the metal-Phosphorene interfaces using Density Functional Theory (DFT) and Non Equilibrium Green’s Function (NEGF) computational methods. We have studied, how carrier transports at the interfaces is limited by van der Waals (vdW) gap across the interfaces and how the gap can be reduced by creating the Carbon vacancy (defect engineering) at the Graphene-Palladium interface. We have seen that the defect engineering enhances the Carbon-Palladium bond at the interface which reduces the van der Walls (vdW) gap, hence contact resistance due to corresponding reduction in the tunneling barrier width at the interface. We have also studied that the defect engineering (Phosphorous vacancy) at the Phosphorene-Palladium interface is not effective as Graphene-Palladium interface because it has less interfacial (vdW) gap than Graphene-Palladium interface intrinsically.
{"title":"A First Principle Insight into Defect Assisted Contact Engineering at the Metal-Graphene and Metal-Phosphorene Interfaces","authors":"J. Kumar, A. Meersha, Ansh, M. Shrivastava","doi":"10.1109/SISPAD.2019.8870396","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870396","url":null,"abstract":"In this work we have studied bonding nature of Graphene and Phosphorene with metal (Pd) followed by carrier transport behavior and contact resistance engineering across the metal-Graphene and the metal-Phosphorene interfaces using Density Functional Theory (DFT) and Non Equilibrium Green’s Function (NEGF) computational methods. We have studied, how carrier transports at the interfaces is limited by van der Waals (vdW) gap across the interfaces and how the gap can be reduced by creating the Carbon vacancy (defect engineering) at the Graphene-Palladium interface. We have seen that the defect engineering enhances the Carbon-Palladium bond at the interface which reduces the van der Walls (vdW) gap, hence contact resistance due to corresponding reduction in the tunneling barrier width at the interface. We have also studied that the defect engineering (Phosphorous vacancy) at the Phosphorene-Palladium interface is not effective as Graphene-Palladium interface because it has less interfacial (vdW) gap than Graphene-Palladium interface intrinsically.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"8 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77320208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/SISPAD.2019.8870564
K. Yoshida, Kohei Tsukahara, N. Sano
The random dopant fluctuation (RDF) is a dominant source of statistical variability for nano-scale metal-oxide-semiconductor-field-effect-transistors (MOSFETs). We study RDF with the polarization effect induced by the discreteness of impurity and the dielectric mismatch at the Si/oxide interface by 3D drift-diffusion simulation. The charge distribution model employed in this study for the discrete impurity clarifies RDF dependence on the dielectric constant of oxide material. It is shown that explicit modeling of the polarization charge associated with discrete impurities is inevitable for reliable prediction of threshold voltage.
{"title":"Polarization Effect Induced by Discrete Impurity at Semiconductor/Oxide Interface in Si-FinFET","authors":"K. Yoshida, Kohei Tsukahara, N. Sano","doi":"10.1109/SISPAD.2019.8870564","DOIUrl":"https://doi.org/10.1109/SISPAD.2019.8870564","url":null,"abstract":"The random dopant fluctuation (RDF) is a dominant source of statistical variability for nano-scale metal-oxide-semiconductor-field-effect-transistors (MOSFETs). We study RDF with the polarization effect induced by the discreteness of impurity and the dielectric mismatch at the Si/oxide interface by 3D drift-diffusion simulation. The charge distribution model employed in this study for the discrete impurity clarifies RDF dependence on the dielectric constant of oxide material. It is shown that explicit modeling of the polarization charge associated with discrete impurities is inevitable for reliable prediction of threshold voltage.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"26 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79630392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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