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2021 IEEE 21st International Conference on Nanotechnology (NANO)最新文献

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Nanobowtie Embedded Microfluidic Device for SERS Identification of Extracellular Vesicles from Synthetic Liposomes 纳米领结嵌入微流控装置用于合成脂质体细胞外囊泡的SERS识别
Pub Date : 2021-07-28 DOI: 10.1109/NANO51122.2021.9514348
M. Jalali, Sayed Iman Isaac Hosseini, T. AbdelFatah, L. Montermini, S. Hogiu, J. Rak, S. Mahshid
The need for repeated molecular analyses in facilitating precision oncology, drive the efforts to amend liquid biopsy methods. Surface enhanced Raman spectroscopy (SERS) provides a facile platform for liquid biopsy applications. The plasmonic nanomaterials represents a paradigm shift in harnessing the distinguished merits of SERS platforms and therefore of remarkable potential to enhance the sensitivity of the identification. Here, we studied the fabrication, implementation, and application of nanobowtie structures embedded in a microfluidic device for sensitive SERS identification. As a proof of principle, we evaluated the competence of the device in SERS identification of the extracellular vesicles derived from NHA cells for sensitivity. Using the nanobowtie embedded microfluidic device, we were able to distinguish a set of peaks expressed in NHA EVs populations from the artificial homogenous vesicles.
需要重复分子分析,以促进精确肿瘤学,推动努力修改液体活检方法。表面增强拉曼光谱(SERS)为液体活检应用提供了一个简便的平台。等离子体纳米材料代表了利用SERS平台的杰出优点的范式转变,因此具有提高识别灵敏度的显着潜力。在这里,我们研究了纳米领结结构嵌入微流控装置的制造、实现和应用,用于灵敏的SERS识别。作为原理证明,我们评估了该装置在NHA细胞衍生的细胞外囊泡的SERS识别能力的敏感性。利用纳米领结嵌入的微流控装置,我们能够区分NHA ev群体中表达的一组峰和人工均质囊泡。
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引用次数: 0
High Reliability Engineered Copper SMT Bonding Material 高可靠性工程铜SMT粘接材料
Pub Date : 2021-07-28 DOI: 10.1109/NANO51122.2021.9514296
A. Zinn, R. Stoltenberg, Reynaldo Joven, Nhi K. Ngo, Alexander Capanzana
We set out to affirm the high reliability of a novel nanocopper-based highly conductive bond agent that allows the formulation of an entire suite of Tunable Engineered Copper (TEC) pastes and inks suited for a wide range of SMT die-bonding and packaging applications. In this paper, we present comprehensive thermal cycling and thermal shock data on 3×3 mm silicon carbide (SiC) dies bonded to patterned direct-bond copper (DBC) aluminum nitride (AlN) substrates. We found a 100% survival rate for over 100 devices tested across 3 different test series substantiating the high reliability provided by TEC. Some parts even survived repeated 100 kg shear loads (>110 MPa) after thermal treatment without failing. The pressure-less, fused-copper interfaces exhibit superior electrical (as high as 70% IACS) and thermal (as high as 330 W/m·K) conductivity compared to common tin-based solders and sintered silver. Therefore, TEC offers for the first time a viable all-copper SMT material completely decoupling process-temperature from operating temperature that enables all-copper packaging systems that eliminates brittle IMC formation. High-temperature stability has already been tested to over 500°C. With these properties, it is vastly superior to sintered silver and processable without the need for pressure during fusion with just a few minutes processing time. TEC has been under development for over 10 years and recently matured to the point that it can be integrated into commercial products.
我们开始确认一种新型纳米铜基高导电性粘结剂的高可靠性,该粘结剂允许制定一整套可调工程铜(TEC)浆料和油墨,适用于广泛的SMT模粘接和封装应用。在本文中,我们提供了3×3 mm碳化硅(SiC)模具与图像化直接键合铜(DBC)氮化铝(AlN)衬底结合的综合热循环和热冲击数据。我们发现,在3个不同的测试系列中,超过100个设备的100%存活率证实了TEC提供的高可靠性。部分部件在热处理后甚至可以承受100 kg (>110 MPa)的剪切载荷而不失效。与普通锡基焊料和烧结银相比,无压熔融铜界面具有优越的电导率(高达70% IACS)和热导电性(高达330 W/m·K)。因此,TEC首次提供了一种可行的全铜SMT材料,完全将工艺温度与工作温度脱钩,使全铜封装系统能够消除脆性IMC形成。高温稳定性已经测试到500°C以上。由于这些特性,它大大优于烧结银,并且在熔合过程中无需压力即可加工,只需几分钟的加工时间。TEC已经开发了10多年,最近已经成熟到可以集成到商业产品中。
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引用次数: 0
Impact of Spin Fluctuation on the magnetic properties of Magnetic Tunnel Junction-Based Molecular Spintronic Device (MTJMSD) 自旋涨落对磁隧道结分子自旋电子器件(MTJMSD)磁性能的影响
Pub Date : 2021-07-28 DOI: 10.1109/nano51122.2021.9514317
Marzieh Savadkoohi, Bishnu R. Dahal, Eva Mutungo, Andrew Grizzle, Christophe D'Angelo, P. Tyagi
Striking advancement of science over the last few decades has doubled the need of having faster and more efficient electronic devices. Magnetic tunnel junction-based molecular spintronic devices (MTJMSDs) are potential platforms for futuristic computers and may significantly reduce power consumption and enhance processing speed [1], [2]. Using transport properties of electrons, MTJMSD creates conductive molecular channels between two FM electrodes (FMEs). In our previous work, we investigated the effect of several factors on MTJMSDs' magnetic properties through Monte Carlo Simulation (MCS). Our results showed that i) Molecule-FMEs' coupling strength and nature ii) FMEs' length and thickness and iii) thermal energy have determinative effect on MTJMSD magnetic behavior [3]. For our initial comprehension, we constrained our earlier studies to just electrons' transport properties via molecular channels. In this research we took one step further towards realization of MTJMSD magnetic properties and investigated the effect of spin fluctuation (SF) as well. Here, we report the result of an extreme case where molecules made a strong antiFM coupling with one electrode and a strong FM coupling with another one at room temperature (KT=0.1 of the Curie temperature) for a fixed device size. Our preliminary results show that MTJMSD's need more iteration counts to attain equilibrium state in the presence of SFs. According to our MCS results, 16 molecules can induce antiFM coupling between FMEs in both with and without SF cases. However, the spatial orientation of M is noisier in the presence of SF despite doing 500 million simulation counts. The correlation results agree with spatial orientation of electrodes and molecules' magnetic moment. Based on our observation, there is a strong negative/antiferromagnetic correlation between FMEs when there is no SF. However, there are multiple pockets of average to high negative correlation between FMEs and molecules while applying SF effect. To complement our study and gain a better understanding of the role of SF on MTJMSD's magnetic properties, we will also investigate time evolution of energy, magnetic susceptibility and coupling energy required for transition from low to high magnetization.
在过去的几十年里,科学的惊人进步使人们对更快、更高效的电子设备的需求增加了一倍。基于磁隧道结的分子自旋电子器件(MTJMSDs)是未来计算机的潜在平台,可以显著降低功耗并提高处理速度[1],[2]。利用电子的输运特性,MTJMSD在两个调频电极(FMEs)之间创建导电分子通道。在我们之前的工作中,我们通过蒙特卡罗模拟(MCS)研究了几个因素对MTJMSDs磁性能的影响。我们的研究结果表明,i)分子-FMEs的耦合强度和性质ii) FMEs的长度和厚度以及iii)热能对MTJMSD的磁性行为具有决定性影响[3]。为了我们最初的理解,我们将早期的研究局限于电子通过分子通道的传输性质。在本研究中,我们进一步研究了MTJMSD的磁性能,并研究了自旋涨落(SF)对MTJMSD磁性能的影响。在这里,我们报告了一个极端情况下的结果,在室温(KT=居里温度的0.1)下,分子与一个电极进行了强反调频耦合,并与另一个电极进行了强调频耦合。我们的初步结果表明,MTJMSD需要更多的迭代次数才能达到平衡状态。根据我们的MCS结果,16个分子在有和没有SF的情况下都可以诱导FMEs之间的反fm耦合。然而,尽管进行了5亿次模拟计数,但在SF存在的情况下,M的空间方向噪声更大。相关结果与电极的空间取向和分子的磁矩一致。根据我们的观察,当没有SF时,fme之间存在很强的负/反铁磁相关性。然而,在应用SF效应时,FMEs与分子之间存在多个平均到高度负相关的口袋。为了补充我们的研究并更好地理解SF对MTJMSD磁性能的作用,我们还将研究从低磁化到高磁化转变所需的能量、磁化率和耦合能的时间演变。
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引用次数: 0
Enhancing the Sensitivity of a Class of Sensors: A Data-Based Engineering Approach 提高一类传感器的灵敏度:基于数据的工程方法
Pub Date : 2021-07-28 DOI: 10.1109/NANO51122.2021.9514352
P. G. López-Cárdenas, E. Alcala, J. Sánchez‐Torres, E. Araujo
This paper's primary motivation is developing non-invasive glucose monitoring methods and devices by detecting hydrogen peroxide in fluids like tears, sweat, or saliva since it is a subproduct molecule of various biochemical processes directly correlated with glucose concentration. The availability of those mentioned tools could facilitate the rapid development of reliable and cheap sensors without the complications of using invasive methods, especially when blood samples are repeatedly required. Therefore, this work aims to lay the foundations for developing non-invasive and highly sensitive glucose detection methods as the ultimate proposal. Consequently, contributing to track and control the high glucose levels that cause significant health and economic problems in our society. Thus, this paper presents an approach for enhancing the hydrogen peroxide sensitivity in sensors nanostructured with nanowires. In contrast to most of the standard design methodologies, this scheme does not rely on phenomenological models but experimental data and statistical modeling. Firstly, for a sensor with a given design, the data obtained with cyclic voltammetry allows finding the potential at which the sensor's response is the highest for hydrogen peroxide's concentrations ranging from 0 to 20 millimoles. Secondly, after calculating the optimal potential, a linear regression correctly relates current density with the concentration, representing the sensor's sensitivity as such a linear model's slope. Finally, using planar (non- nanostructured) sensors as a benchmark, a statistical test allows concluding that the sensitivity is significantly higher for nanostructured sensors using gold and nickel self-supported nanowires arrays than planar.
本文的主要动机是通过检测眼泪,汗液或唾液等液体中的过氧化氢来开发无创血糖监测方法和设备,因为过氧化氢是与葡萄糖浓度直接相关的各种生化过程的亚产物分子。上述这些工具的可用性可以促进可靠和廉价传感器的快速发展,而无需使用侵入性方法的并发症,特别是在反复需要血液样本时。因此,本工作旨在为开发无创、高灵敏度的葡萄糖检测方法奠定基础。因此,有助于追踪和控制导致我们社会重大健康和经济问题的高血糖水平。因此,本文提出了一种在纳米线纳米结构传感器中提高过氧化氢灵敏度的方法。与大多数标准设计方法相比,该方案不依赖于现象学模型,而是依赖于实验数据和统计建模。首先,对于给定设计的传感器,通过循环伏安法获得的数据可以找到在过氧化氢浓度范围为0到20毫摩尔时传感器响应最高的电位。其次,在计算出最优电位后,线性回归正确地将电流密度与浓度联系起来,将传感器的灵敏度表示为线性模型的斜率。最后,使用平面(非纳米结构)传感器作为基准,统计测试允许得出结论,使用金和镍自支撑纳米线阵列的纳米结构传感器的灵敏度显着高于平面。
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引用次数: 2
Quantitative Investigation of New Templateless Growth Method for Highly Crystalline Ni, Co and Ni-Co Nanowires 高结晶Ni, Co和Ni-Co纳米线无模板生长新方法的定量研究
Pub Date : 2021-07-28 DOI: 10.1109/NANO51122.2021.9514356
Gaurab Panda, Haozhi Dong, V. Ayres, M. Hussain
In this work, we report growth of highly crystalline Ni, Co and layered Ni-Co nanowires obtained by a novel combination of high-speed turbulent flow electrodeposition with a thin hydrocarbon layer on an oxidized titanium substrate. Our results indicate that a turbulent flow regime can be used to break a hydrocarbon surface film into an array of carbon catalyst particles while creating solute-substrate ion chemistries that are conducive for highly crystalline Ni, Co and layered Ni-Co nanowire growth.
在这项工作中,我们报道了高速湍流电沉积与氧化钛衬底上薄碳氢化合物层的新组合,获得了高结晶的Ni, Co和层状Ni-Co纳米线。我们的研究结果表明,湍流状态可以将碳氢化合物表面膜分解成一系列碳催化剂颗粒,同时产生有利于高结晶Ni, Co和层状Ni-Co纳米线生长的溶质-衬底离子化学反应。
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引用次数: 0
Low-cost and Portable Creatinine Electrochemical Sensor for Non-invasive Chronic Kidney Disease Monitoring 低成本便携式肌酐电化学传感器用于无创慢性肾脏疾病监测
Pub Date : 2021-07-28 DOI: 10.1109/NANO51122.2021.9514318
Tinn Hongboontry, Surada Ponwaranon, Supphakorn Sirijongdee, C. Thanachayanont, P. Pungetmongkol
Creatinine, a metabolized product of phosphocreatine in muscles, is excreted via urine by kidneys. Creatinine concentration in urine is an indicator of renal function for a patient with chronic kidney disease. A single-use and portable screen-printed carbon electrode with copper oxide nanostructure was developed for creatinine detection via copper-creatinine complex formation. SEM was deployed to visualize the copper oxide nanostructure. Creatinine measurement was performed in 0.1 M PBS at pH 6.5 with a smartphone application and portable near-field communication potentiostat. Five chemicals were tested as interferences. The CuO/SPCE shows linear and repeatable responses of creatinine from 0–30 mM, which makes it an appealing alternative for quick and reliable CRE detection.
肌酸酐是肌肉中磷酸肌酸的代谢产物,由肾脏通过尿液排出。尿肌酐浓度是慢性肾病患者肾功能的一个指标。通过铜-肌酸酐络合物的形成,制备了一种具有氧化铜纳米结构的一次性便携式丝网印刷碳电极,用于肌酸酐的检测。利用扫描电镜观察氧化铜纳米结构。肌酐测量在0.1 M PBS中进行,pH为6.5,使用智能手机应用程序和便携式近场通信电位器。测试了五种化学物质作为干扰物。CuO/SPCE在0-30 mM范围内对肌酐具有线性和可重复的响应,这使其成为快速可靠的CRE检测的一种有吸引力的替代方法。
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引用次数: 5
Degradation Mechanisms in a Proton Irradiated HEMT with 3DEG Conduction and 3DHG as a Back Barrier 质子辐照3DEG传导和3DHG作为后势垒的HEMT降解机理
Pub Date : 2021-07-28 DOI: 10.1109/NANO51122.2021.9514295
K. Sehra, V. Kumari, Mridula Gupta, M. Mishra, D. S. Rawal, M. Saxena
This work evaluates the degradation mechanisms of the proton irradiated HEMTs incorporating graded AlGaN layers that support 3DEG for the conduction and 3DHG as a back barrier and subsequently evaluating it for dosimeter applications. The results presented demonstrate the deleterious effects of the proton fluence on the device's transfer characteristics in creating a bottleneck towards the flow of carriers in the 3DEG sheet. However, the trench gate arrangement with HfO2 insulator controlling the bottleneck for the device operation remains intact even at a high proton fluence.
这项工作评估了质子辐照hemt的降解机制,包括支持3DEG传导和3DHG作为后屏障的梯度AlGaN层,并随后评估其用于剂量计的应用。研究结果表明,质子通量对器件的转移特性产生了有害影响,在3DEG薄片中形成了载流子流动的瓶颈。然而,具有HfO2绝缘体的沟槽栅布置控制了器件运行的瓶颈,即使在高质子通量下也保持不变。
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引用次数: 1
Displacement Profile of Micromachined Nano-Electro-Mechanical-Ultrasonic Pressure Sensor: A Comparative Analysis 微机械纳米机电超声压力传感器位移曲线的比较分析
Pub Date : 2021-07-28 DOI: 10.1109/NANO51122.2021.9514350
Avik Ghosh Dastidar, R. Tiwari, R. Maity, N. Maity
The present study aims to unveil the efficacy of three different theoretical models namely both sides clamped circular plates model, clamped circular model with nonlocal plate theory (modified for nano scale) and membrane displacement model using silicon nitride (Si3N4) capacitive micromachined ultrasonic transducer (CMUT). To address the edge effects in calculation of capacitance of CMUT which should not be neglected in case of small dimension like micrometer or less, Landau & Lifschitz method of fringing has been incorporated in all these three models to precisely compute the displacement profiles. To validate these analytical models, the Finite Element Modelling (FEM) model has been built with COMSOL. The thorough investigation for various radius and thickness of the diaphragm of the CMUT has been done to reveal the superiority of a particular analytical model depending on the CMUT dimension.
本研究旨在揭示三种不同的理论模型的有效性,即两侧夹持圆板模型、非局部板理论夹持圆模型(修正为纳米尺度)和使用氮化硅(Si3N4)电容性微机械超声换能器(CMUT)的膜位移模型。为了解决CMUT电容计算中在微米及以下的小尺寸下不可忽视的边缘效应,这三种模型都采用了Landau & Lifschitz边缘法来精确计算位移轮廓。为了验证这些分析模型,利用COMSOL软件建立了有限元模型。对不同半径和不同厚度的CMUT膜片进行了深入的研究,揭示了基于CMUT尺寸的特定分析模型的优越性。
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引用次数: 2
Foldable paper based triboelectric nanogenerator for green energy harvesting 用于绿色能源收集的可折叠纸基摩擦电纳米发电机
Pub Date : 2021-07-28 DOI: 10.1109/NANO51122.2021.9514313
Daeun Kim, Jiwon Park, Youn Tae Kim
As the demand for low-carbon and eco-friendly energy is increasing and the use of wearable devices is soaring, the triboelectric nanogenerator (TENG), which can economically harvest energy, is in the spotlight. Among many materials, paper is considered a promising substrate and frame material for self-powered TENG due to its high accessibility, flexibility, and biocompatibility. Here, we present a new structure of foldable paper based TENG (FP-TENG) composed of paper and PTFE/Si-rubber. The double-folded FP-TENG generates voltages and currents of 153 V and 2.2 µA, respectively, and shows excellent durability without signal degradation under 5,000 cycles of external force. A watch strap was manufactured with FP-TENG and integrated with an electronic watch pannel to supply power, and several LEDs were turned on. Therefore, FP-TENG is expected to be utilized as a promising eco-friendly energy source for small electronic devices.
随着低碳环保能源需求的增加和可穿戴设备的使用激增,能够经济地收集能源的摩擦电纳米发电机(TENG)成为人们关注的焦点。在许多材料中,纸被认为是一种很有前途的基底和框架材料,因为它具有很高的可及性、灵活性和生物相容性。本文提出了一种由纸张和聚四氟乙烯/硅橡胶组成的新型可折叠纸基TENG (FP-TENG)结构。双折叠FP-TENG的电压和电流分别为153 V和2.2µA,在5000次外力循环下表现出优异的耐用性,没有信号退化。使用FP-TENG制造表带,并与电子手表面板集成以供电,并打开几个led。因此,FP-TENG有望成为小型电子设备的环保能源。
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引用次数: 0
Investigation of the Thermal Conductivity of Materials in 2D/3D Heterostructures 二维/三维异质结构中材料导热性的研究
Pub Date : 2021-07-28 DOI: 10.1109/NANO51122.2021.9514284
O. Kaya, Nazli Donmezer
Recent developments in nanofabrication have been enabling us to build 2D material-based devices with superior electrical, optical, and thermal properties. Just as with many other semiconductor devices heat generated within the device during operation may cause device degradation and reliability problems. In these devices, 2D and GaN or SiO2 materials are in contact due to fabrication or/and device requirements. Around these interfaces, thermal properties are strongly affected by the phonon scattering mechanisms in materials. Although thermal boundary conductance has been investigated more; despite its importance, the change in individual material thermal conductivities are not investigated in detail. To observe the changes in material thermal conductivities around the interfaces, heterostructures of common 2D materials: Mos2, WSe2, and h-BN on GaN and SiO2 substrates are simulated through nonequilibrium molecular dynamics (NEMD). Obtained thermal conductivities are later compared with the thermal conductivities of the isolated materials. These results shed light on the thermal transport mechanisms in 2D/GaN and 2D/SiO2 heterostructures and help to build better thermal management strategies for devices involving such architectures.
纳米制造的最新发展使我们能够构建具有优越电学、光学和热学性能的二维材料器件。与许多其他半导体器件一样,在器件运行过程中产生的热量可能导致器件退化和可靠性问题。在这些器件中,由于制造或/和器件要求,2D和GaN或SiO2材料接触。在这些界面周围,材料的热性能受到声子散射机制的强烈影响。虽然热边界电导的研究较多;尽管它很重要,但个别材料导热系数的变化并没有详细研究。为了观察界面周围材料导热系数的变化,采用非平衡分子动力学(NEMD)方法模拟了常见二维材料Mos2、WSe2和h-BN在GaN和SiO2衬底上的异质结构。得到的热导率随后与隔离材料的热导率进行比较。这些结果揭示了2D/GaN和2D/SiO2异质结构中的热传递机制,并有助于为涉及此类结构的器件建立更好的热管理策略。
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引用次数: 1
期刊
2021 IEEE 21st International Conference on Nanotechnology (NANO)
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