Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514349
M. H. Alam, M. V., S. Nibhanupudi, S. Banerjee, D. Akinwande
Solid-state electrolytes have attracted significant attention in rechargeable battery and solid-state device research due to the added benefits over the liquid electrolytic counterpart owing to their solid nature. Here, we demonstrated centimeter-scale growth of MoS2 thin film, a promising two-dimensional (2D) material for transistor and energy storage, on Li-ion solid electrolyte substrate by sulfurization of Molybdenum thin film. The sulfurized film was characterized using a combination of spectroscopic and microscopic analyses, including optical microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and Raman spectroscopy. The film was further characterized by electrical probing to measure the film quality and underlying transport mechanism.
{"title":"Centimeter-Scale MoS2 on Solid Electrolyte Substrate by Sulfurization of Molybdenum Thin Film","authors":"M. H. Alam, M. V., S. Nibhanupudi, S. Banerjee, D. Akinwande","doi":"10.1109/NANO51122.2021.9514349","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514349","url":null,"abstract":"Solid-state electrolytes have attracted significant attention in rechargeable battery and solid-state device research due to the added benefits over the liquid electrolytic counterpart owing to their solid nature. Here, we demonstrated centimeter-scale growth of MoS2 thin film, a promising two-dimensional (2D) material for transistor and energy storage, on Li-ion solid electrolyte substrate by sulfurization of Molybdenum thin film. The sulfurized film was characterized using a combination of spectroscopic and microscopic analyses, including optical microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and Raman spectroscopy. The film was further characterized by electrical probing to measure the film quality and underlying transport mechanism.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"30 1","pages":"421-424"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85511307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514339
Ruchi Singh, Gaurav Siddharth, R. Bhardwaj, S. Mukherjee
Sb-ZnO (SZO) thin films were formed on n-Si semiconductor and sapphire by dual ion beam sputtering (DIBS) technique. Structural and optical parameters of SZO sputtered grown film were determined by ellipsometry and field emission scanning electron microscopy (FE-SEM), and I-V analysis of the SZO/n-Si heterojunction device in dark. A smooth film without any grain boundaries is observed in SEM analysis. The bandgap (Eg) of the grown SZO film is obtained and the value of Eg obtained is 3.92 eV. A high refractive index in the range of n=1.85-2.08 is shown by the deposited SZO film in the ultraviolet (UV)-visible region, moreover, it can be seen from the ellipsometry analysis that the fundamental absorption edge is obtained near the UV region. A rectification ratio of ~ 16 times is observed at ±4 V for SZO/n-Si heterojunction. The Study concludes that SZO material has the potential to be used in the application dealing with the UV region of the light spectra.
{"title":"Structural and optical study of sputtered grown Sb doped ZnO thin film","authors":"Ruchi Singh, Gaurav Siddharth, R. Bhardwaj, S. Mukherjee","doi":"10.1109/NANO51122.2021.9514339","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514339","url":null,"abstract":"Sb-ZnO (SZO) thin films were formed on n-Si semiconductor and sapphire by dual ion beam sputtering (DIBS) technique. Structural and optical parameters of SZO sputtered grown film were determined by ellipsometry and field emission scanning electron microscopy (FE-SEM), and I-V analysis of the SZO/n-Si heterojunction device in dark. A smooth film without any grain boundaries is observed in SEM analysis. The bandgap (Eg) of the grown SZO film is obtained and the value of Eg obtained is 3.92 eV. A high refractive index in the range of n=1.85-2.08 is shown by the deposited SZO film in the ultraviolet (UV)-visible region, moreover, it can be seen from the ellipsometry analysis that the fundamental absorption edge is obtained near the UV region. A rectification ratio of ~ 16 times is observed at ±4 V for SZO/n-Si heterojunction. The Study concludes that SZO material has the potential to be used in the application dealing with the UV region of the light spectra.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"25 1","pages":"474-477"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90498168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514357
Do Hyeon Kim, A. Kulahlioglu, H. W. Han, B. Kong
This work presents an analysis of the optical properties of transition metal adatom-graphene quantum dot complexes (TM-GQDs). TM-GQDs with five metals (Cr, Mo, W, Pd, and Pt) and pristine GQDs were investigated to explore the possibility of engineering the optical characteristics. By Density Functional Theory and Time-Dependent Density Functional Theory, excited energy states and absorption spectra were analyzed. As a function of graphene quantum dot sizes and TMs, significant changes in HOMO-LUMO levels and optical transition energies were observed. The HOMO-LUMO gaps and energy levels in the visible range clearly indicate the adatom induced energy level shifts, showing smaller energy gaps in TM-GQDs than the pristine GQDs. The calculated THz absorption spectra show strong dependency on the size and adatom mass of TM-GQDs. The tunable optical properties of the TM-GQDs can be utilized as optical sources for future display applications.
{"title":"Tunable Optical Absorption of Graphene Quantum Dots with Transition Metal Adatom","authors":"Do Hyeon Kim, A. Kulahlioglu, H. W. Han, B. Kong","doi":"10.1109/NANO51122.2021.9514357","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514357","url":null,"abstract":"This work presents an analysis of the optical properties of transition metal adatom-graphene quantum dot complexes (TM-GQDs). TM-GQDs with five metals (Cr, Mo, W, Pd, and Pt) and pristine GQDs were investigated to explore the possibility of engineering the optical characteristics. By Density Functional Theory and Time-Dependent Density Functional Theory, excited energy states and absorption spectra were analyzed. As a function of graphene quantum dot sizes and TMs, significant changes in HOMO-LUMO levels and optical transition energies were observed. The HOMO-LUMO gaps and energy levels in the visible range clearly indicate the adatom induced energy level shifts, showing smaller energy gaps in TM-GQDs than the pristine GQDs. The calculated THz absorption spectra show strong dependency on the size and adatom mass of TM-GQDs. The tunable optical properties of the TM-GQDs can be utilized as optical sources for future display applications.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"37 1","pages":"130-133"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82864302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514332
S. A. Díaz, E. Oh, Scott A. Walper, D. Hastman, Igor L. Medintz
We have demonstrated that multi-enzyme cascades can be templated on individual gold nanoparticles (NPs) with diameters below 100 nm. Utilizing a three enzyme cascade of amylase, maltase, and glucokinase we found a ~3-fold enhancement in product formation when all three enzymes were bound to the same NP as compared to controls. This strongly suggests that the increased kinetics was due to substrate channeling. Additional controls were realized to ensure that only when the enzymes were bound to the NPs was enhancement observed by modifying the ratio of enzyme to NP. Furthermore the experiments support a model where a single-layer of enzymes conjugate to the NPs independently of the enzyme to NP ratio. Being able to conjugate entire cascades on individual NPs should allow for optimized design of NPs and enzyme cascades for in vitro biocatalysis.
{"title":"Gold nanoparticles capable of templating entire enzyme cascades and improving production yield through substrate channeling","authors":"S. A. Díaz, E. Oh, Scott A. Walper, D. Hastman, Igor L. Medintz","doi":"10.1109/NANO51122.2021.9514332","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514332","url":null,"abstract":"We have demonstrated that multi-enzyme cascades can be templated on individual gold nanoparticles (NPs) with diameters below 100 nm. Utilizing a three enzyme cascade of amylase, maltase, and glucokinase we found a ~3-fold enhancement in product formation when all three enzymes were bound to the same NP as compared to controls. This strongly suggests that the increased kinetics was due to substrate channeling. Additional controls were realized to ensure that only when the enzymes were bound to the NPs was enhancement observed by modifying the ratio of enzyme to NP. Furthermore the experiments support a model where a single-layer of enzymes conjugate to the NPs independently of the enzyme to NP ratio. Being able to conjugate entire cascades on individual NPs should allow for optimized design of NPs and enzyme cascades for in vitro biocatalysis.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"39 1","pages":"393-396"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81460513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514306
Zi Wang, T. Wong
Semiconductor nanodimer provides substantial terahertz electric field intensification in the gap region as a result of geometric local field effect and surface plasmon resonance. In a dimer formed by two nanoparticles with unequal doping levels, the intrinsic resonances of the nanoparticles are carried over to the coupled configuration of the dimer, giving rise to two resonances, slightly shifted from those of the intrinsic particles. An important characteristic of the enhanced field in the gap is the intensity profile swaying when the frequency of the applied field is varied from one resonance to the other. In this work, the field distribution in an asymmetric semiconductor nanodimer is computed by numerical simulation of the charge-field interaction in the semiconductor, employing a transport formulation for charge dynamics. Charge distribution in the semiconductor, field intensity in the gap and the collective response in terms of the total dipole moment are obtained. Interpretation of the results is presented in light of polarization coupling and interference effects between the particles. Potential application of the dynamical response as a field scanning sensor in the terahertz range is explored.
{"title":"Field Dynamics in the Gap of a Semiconductor Nanodimer","authors":"Zi Wang, T. Wong","doi":"10.1109/NANO51122.2021.9514306","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514306","url":null,"abstract":"Semiconductor nanodimer provides substantial terahertz electric field intensification in the gap region as a result of geometric local field effect and surface plasmon resonance. In a dimer formed by two nanoparticles with unequal doping levels, the intrinsic resonances of the nanoparticles are carried over to the coupled configuration of the dimer, giving rise to two resonances, slightly shifted from those of the intrinsic particles. An important characteristic of the enhanced field in the gap is the intensity profile swaying when the frequency of the applied field is varied from one resonance to the other. In this work, the field distribution in an asymmetric semiconductor nanodimer is computed by numerical simulation of the charge-field interaction in the semiconductor, employing a transport formulation for charge dynamics. Charge distribution in the semiconductor, field intensity in the gap and the collective response in terms of the total dipole moment are obtained. Interpretation of the results is presented in light of polarization coupling and interference effects between the particles. Potential application of the dynamical response as a field scanning sensor in the terahertz range is explored.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"103 1","pages":"444-447"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76065152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514304
Carolina del Real Mata, R. Moakhar, I. I. Hosseini, M. Jalali, S. Mahshid
Plasmonic nanostructures are widely studied in opto-electrical sensing and biosensing. Despite their enhanced optical and electromagnetic properties, the complexity of fabrication hinders their integration into cost-effective and scalable electrodes. Here, we focus on a fabless approach to develop a hybrid structure of gold (Au) plasmonic nanocavities and graphene nanosheets for the plasmonic assisted electrochemical detection of hydrogen peroxide (H2O2). The electrode is integrated into a portable microfluidic device and validated via the effective H2O2 detection released from cancer cells.
{"title":"Plasmonic-assisted electrochemical detection of hydrogen peroxide","authors":"Carolina del Real Mata, R. Moakhar, I. I. Hosseini, M. Jalali, S. Mahshid","doi":"10.1109/NANO51122.2021.9514304","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514304","url":null,"abstract":"Plasmonic nanostructures are widely studied in opto-electrical sensing and biosensing. Despite their enhanced optical and electromagnetic properties, the complexity of fabrication hinders their integration into cost-effective and scalable electrodes. Here, we focus on a fabless approach to develop a hybrid structure of gold (Au) plasmonic nanocavities and graphene nanosheets for the plasmonic assisted electrochemical detection of hydrogen peroxide (H2O2). The electrode is integrated into a portable microfluidic device and validated via the effective H2O2 detection released from cancer cells.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"108 1","pages":"441-443"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74643252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514328
Sharvani Gadgil, C. Vudadha
Scaling of transistors beyond a certain limit is giving rise to problems in the traditional CMOS (Complementary - Metal-Oxide-Semiconductor) technology. This has lead researchers to explore newer technologies like the CNFET(Carbon-Nanotube-Field-Effect- Transistor). Design of ternary logic circuits using CNFETs has been gaining interest recently which gives benefits for power consumption, interconnection etc when compared to binary logic. Various ternary sequential circuits have been implemented in literature. This paper proposes a new designs for sequential circuits like D-latch and D-flipflop. The proposed successor-predecessor based latch design is multiplexer based that optimises power consumption when compared to existing designs. Ternary flipflop is also designed using the proposed mux based latch design. All the proposed designs are simulated using HSPICE and a standard Stanford CNFET model. Simulation results for the proposed successor-predecessor based D-latch design and proposed D-flipflop design shows an improvement of upto 36% and 51% in power respectively, as compared to designs existing in literature.
传统的CMOS (Complementary - metal - oxide semiconductor，互补金属氧化物半导体)技术中，晶体管的尺寸超过一定的限制就会出现问题。这促使研究人员探索新的技术，如CNFET(碳纳米管场效应晶体管)。使用cnfet设计三元逻辑电路最近引起了人们的兴趣，与二进制逻辑相比，它在功耗，互连等方面具有优势。各种三元顺序电路已经在文献中实现。本文提出了一种新的顺序电路设计，如d锁存器和d触发器。所提出的基于后继-前代锁存器的设计是基于多路复用器的，与现有设计相比，可以优化功耗。利用所提出的基于多路锁存器的设计，还设计了三元触发器。采用HSPICE和标准斯坦福CNFET模型对所有设计进行了仿真。仿真结果表明，与现有文献设计相比，基于后继-前驱d锁存器设计和d触发器设计的功率分别提高了36%和51%。
{"title":"Design of CNFET-based Low-Power Ternary Sequential Logic circuits","authors":"Sharvani Gadgil, C. Vudadha","doi":"10.1109/NANO51122.2021.9514328","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514328","url":null,"abstract":"Scaling of transistors beyond a certain limit is giving rise to problems in the traditional CMOS (Complementary - Metal-Oxide-Semiconductor) technology. This has lead researchers to explore newer technologies like the CNFET(Carbon-Nanotube-Field-Effect- Transistor). Design of ternary logic circuits using CNFETs has been gaining interest recently which gives benefits for power consumption, interconnection etc when compared to binary logic. Various ternary sequential circuits have been implemented in literature. This paper proposes a new designs for sequential circuits like D-latch and D-flipflop. The proposed successor-predecessor based latch design is multiplexer based that optimises power consumption when compared to existing designs. Ternary flipflop is also designed using the proposed mux based latch design. All the proposed designs are simulated using HSPICE and a standard Stanford CNFET model. Simulation results for the proposed successor-predecessor based D-latch design and proposed D-flipflop design shows an improvement of upto 36% and 51% in power respectively, as compared to designs existing in literature.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"32 1","pages":"169-172"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86958066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514289
D. Ohori, M. Murata, A. Yamamoto, K. Endo, Min-Hui Chuang, Ming-Yi Lee, Yiming Li, J. Tarng, Yao-Jen Lee, S. Samukawa
We have demonstrated a thermally managed Si nanopillar/SiGe composite structure. Our fabricated defect-free Si nanopillar channel structure showed a 1/100 times lower thermal conductivity than Si bulk thanks to the control of the phonon transports. The results of thermal conductivity measurements clarified that the nanopillar structure could eliminate electron-phonon scattering. As such, this structure represents a promising solution for advanced CMOS technologies.
{"title":"Si Nanopillar/SiGe Composite Structure for Thermally Managed Nano-devices","authors":"D. Ohori, M. Murata, A. Yamamoto, K. Endo, Min-Hui Chuang, Ming-Yi Lee, Yiming Li, J. Tarng, Yao-Jen Lee, S. Samukawa","doi":"10.1109/NANO51122.2021.9514289","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514289","url":null,"abstract":"We have demonstrated a thermally managed Si nanopillar/SiGe composite structure. Our fabricated defect-free Si nanopillar channel structure showed a 1/100 times lower thermal conductivity than Si bulk thanks to the control of the phonon transports. The results of thermal conductivity measurements clarified that the nanopillar structure could eliminate electron-phonon scattering. As such, this structure represents a promising solution for advanced CMOS technologies.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"2015 1","pages":"199-202"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73396636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514354
A. Di Tinno, A. Cataldo, L. Ferrigno, A. Maffucci, S. Bellucci, L. Micheli
This paper deals with low-cost sensors to detect the presence of organic pollutants, based on the voltammetric response of Screen Printed Electrodes (SPE). Modified SPEs are here proposed, by using graphene nanoplatelets that represent a low cost version of graphene, characterized by an easier and more scalable production compared to pure graphene. Improved sensing performance are experimentally observed with these surface modifications to the detection of an aromatic organic compound.
{"title":"Nano-Modified Screen-Printed Electrodes for the Determination of Organic Pollutants","authors":"A. Di Tinno, A. Cataldo, L. Ferrigno, A. Maffucci, S. Bellucci, L. Micheli","doi":"10.1109/NANO51122.2021.9514354","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514354","url":null,"abstract":"This paper deals with low-cost sensors to detect the presence of organic pollutants, based on the voltammetric response of Screen Printed Electrodes (SPE). Modified SPEs are here proposed, by using graphene nanoplatelets that represent a low cost version of graphene, characterized by an easier and more scalable production compared to pure graphene. Improved sensing performance are experimentally observed with these surface modifications to the detection of an aromatic organic compound.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"33 1","pages":"34-37"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75388713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514294
J. Spicer
The elastic responses of nuclear graphites depend not only on the graphitic content itself but are largely dictated by the microstructural constitution of the material. The types of raw materials combined with the manufacturing processes used to produce the graphite yield the microstructural content which primarily includes graphite filler, graphitized pitch binder, and voids/defects that typically occupy approximately 20% of the volume. Among these microstructural components, porosity, microcracking (considered to be part of voids/defects) and intracrystallite nanocracking (Mrozowski cracks) heavily influence the overall properties of the material including the elastic moduli. Models describing the elastic moduli of porous, polycrystalline graphite materials have been developed to interpret experimental determinations of Young's modulus and shear modulus in oxidized graphites, and these include the effects of nano/microcracks. This work will demonstrate the role that the effects of neutron irradiation on Mrozowski cracks could have on the phenomenon of turnaround in nuclear graphites and will present directions to be pursued to account for microstructure-related effects that generally occur as a result of neutron irradiation.
{"title":"Effects of Nanocrack Behavior on Radiation-Induced, Elastic Modulus Changes in Nuclear Graphites","authors":"J. Spicer","doi":"10.1109/NANO51122.2021.9514294","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514294","url":null,"abstract":"The elastic responses of nuclear graphites depend not only on the graphitic content itself but are largely dictated by the microstructural constitution of the material. The types of raw materials combined with the manufacturing processes used to produce the graphite yield the microstructural content which primarily includes graphite filler, graphitized pitch binder, and voids/defects that typically occupy approximately 20% of the volume. Among these microstructural components, porosity, microcracking (considered to be part of voids/defects) and intracrystallite nanocracking (Mrozowski cracks) heavily influence the overall properties of the material including the elastic moduli. Models describing the elastic moduli of porous, polycrystalline graphite materials have been developed to interpret experimental determinations of Young's modulus and shear modulus in oxidized graphites, and these include the effects of nano/microcracks. This work will demonstrate the role that the effects of neutron irradiation on Mrozowski cracks could have on the phenomenon of turnaround in nuclear graphites and will present directions to be pursued to account for microstructure-related effects that generally occur as a result of neutron irradiation.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"417 1","pages":"289-292"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75806224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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