Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514323
J. Liu, Yonghai Sun, Siyuan Chen, E. Cheraghi, Jiaqi Wang, Zhemiao Xie, J. Yeow
Low-density patterned Carbon Nanotube (CNT) field emitter is important for applications that require an addressable electron emission source. However, coulomb explosion, that occurs on freestanding CNTs when coulomb repulsion exceeds the limit of van der Waals force, will be induced by low-density patterned CNT field emitters. The coulomb explosion is the main reason cause the short lifetime of low-density patterned CNT field emitters and the direct failure of the CNT field emission (FE) process by inducing a strong arcing between CNT cathode and Indium tin oxide (ITO) anode. Therefore, study the phenomenon of CNT FE induced coulomb explosion and the causes are the keys to increase the lifetime and stability of low-density patterned CNT field emitters.
{"title":"A Study of Coulomb Explosion Induced by Freestanding Carbon Nanotube During Field Emission","authors":"J. Liu, Yonghai Sun, Siyuan Chen, E. Cheraghi, Jiaqi Wang, Zhemiao Xie, J. Yeow","doi":"10.1109/NANO51122.2021.9514323","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514323","url":null,"abstract":"Low-density patterned Carbon Nanotube (CNT) field emitter is important for applications that require an addressable electron emission source. However, coulomb explosion, that occurs on freestanding CNTs when coulomb repulsion exceeds the limit of van der Waals force, will be induced by low-density patterned CNT field emitters. The coulomb explosion is the main reason cause the short lifetime of low-density patterned CNT field emitters and the direct failure of the CNT field emission (FE) process by inducing a strong arcing between CNT cathode and Indium tin oxide (ITO) anode. Therefore, study the phenomenon of CNT FE induced coulomb explosion and the causes are the keys to increase the lifetime and stability of low-density patterned CNT field emitters.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"23 1","pages":"27-30"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83279857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514273
Suparna Panchanan, R. Maity, N. Maity
A drain current model based on Lambert W function is analyzed for lightly doped (undoped) short channel tri gate FinFET (TG-FinFET). The channel length modulation (CLM), the effect of series resistance, mobility degradation and saturation velocity are included in the drain current model. Quantum mechanical effect (QME) is also included to achieve precise drain current for such a small channel device. The model is inspected mainly for two fin widths with two dielectric materials namely, silicon dioxide (SiO2) and hafnium oxide (HfO2). A complete study of electrical parameters including surface potential and the threshold voltage are addressed for both the dielectric materials. The threshold voltage is cross-examined by reported experimental results.
{"title":"A Surface Potential and Drain Current Model for Tri-Gate FinFET: Analysis of Below 10nm Channel Length","authors":"Suparna Panchanan, R. Maity, N. Maity","doi":"10.1109/NANO51122.2021.9514273","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514273","url":null,"abstract":"A drain current model based on Lambert W function is analyzed for lightly doped (undoped) short channel tri gate FinFET (TG-FinFET). The channel length modulation (CLM), the effect of series resistance, mobility degradation and saturation velocity are included in the drain current model. Quantum mechanical effect (QME) is also included to achieve precise drain current for such a small channel device. The model is inspected mainly for two fin widths with two dielectric materials namely, silicon dioxide (SiO2) and hafnium oxide (HfO2). A complete study of electrical parameters including surface potential and the threshold voltage are addressed for both the dielectric materials. The threshold voltage is cross-examined by reported experimental results.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"33 1","pages":"181-184"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78935561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514310
N. Z. Azeemi
Nanomaterial dynamics intrinsically exhibit higher order of visual scanning complexities, result into wholly or partially to the poor scanning instrumentations. Non-invasive instrumentation provides nondestructive, reliable and precise control in Industrial Process Regulation (IPR), where a chemical compound or material surface are always a Point-of-Care (PoC). The increase demand for smart instruments put forth additional constraints on decision indicators at various stages, such as Instrument-in-Loop (IiL) to facilitate better Time-to-Deployment (ToD) in a given scenario, such as handheld measuring instrument. In the same vein, growing trends towards analytical instrumentation cascading smart Lab-On-a-Chip (IoT sensing nodes) has shifted the emphasis on sensitivity as well as robustness tailoring Product Specific Environment (PSE). This work presents a hybrid laser actuated scanning mechanism, rastered back and forth 3-D imaging technique enabling Microscopy to its widest application in biological and material sciences and hence brought forward inevitable challenge of predicting large missing or incorrect data obtained during experiments. Our Confocal Self Calibrated Interferometry augmented with Laser sensor fabricated at miniaturization technology to 7nm scale encourages us to tailor the demand in non-invasive instrumentation, which are widely used in scanning of microorganisms both in-vitro and ex-vitro experiments as well as monitoring. The laser leakage at tip is controlled by PI controllers based on two orthogonal channel tube adjustments and successively in laser reflector lens, Photo Multiplier Tube (PMT), and Data Acquisition Unit (DAU). We exploit the dead time transfer function characteristics to simplify our model which is an inherent feature of Scanning Luminance Microscopes (SLM) and Scanning Electron Microscopes (SEM). We found that the scattering mode for ambient light and fluorescent mode, the nanocarriers leakage induces large particles distributed equilibrium mostly in region 15 nm to 62 nm. We consider the robustness of the thermal infusion of our sensor, the change in any temperature over a neighborhood of 4°C, 14°C, 24°C and results are shown as fitting indicators directly associated with the gap length in a photon multiplier tube gaps. The attributed spectrum exceeded pathway in the Fabry-Perot cavity corresponds to asynchronous yet orthogonally coherent or non-coherent reflected laser actuation. We expose our results for error propagation across various grid patterns over a 1 mm2 section.
{"title":"Leakage Resilient Laser Sensor for Self Calibrated Interferometry using Orthogonal Nano-Fabrication","authors":"N. Z. Azeemi","doi":"10.1109/NANO51122.2021.9514310","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514310","url":null,"abstract":"Nanomaterial dynamics intrinsically exhibit higher order of visual scanning complexities, result into wholly or partially to the poor scanning instrumentations. Non-invasive instrumentation provides nondestructive, reliable and precise control in Industrial Process Regulation (IPR), where a chemical compound or material surface are always a Point-of-Care (PoC). The increase demand for smart instruments put forth additional constraints on decision indicators at various stages, such as Instrument-in-Loop (IiL) to facilitate better Time-to-Deployment (ToD) in a given scenario, such as handheld measuring instrument. In the same vein, growing trends towards analytical instrumentation cascading smart Lab-On-a-Chip (IoT sensing nodes) has shifted the emphasis on sensitivity as well as robustness tailoring Product Specific Environment (PSE). This work presents a hybrid laser actuated scanning mechanism, rastered back and forth 3-D imaging technique enabling Microscopy to its widest application in biological and material sciences and hence brought forward inevitable challenge of predicting large missing or incorrect data obtained during experiments. Our Confocal Self Calibrated Interferometry augmented with Laser sensor fabricated at miniaturization technology to 7nm scale encourages us to tailor the demand in non-invasive instrumentation, which are widely used in scanning of microorganisms both in-vitro and ex-vitro experiments as well as monitoring. The laser leakage at tip is controlled by PI controllers based on two orthogonal channel tube adjustments and successively in laser reflector lens, Photo Multiplier Tube (PMT), and Data Acquisition Unit (DAU). We exploit the dead time transfer function characteristics to simplify our model which is an inherent feature of Scanning Luminance Microscopes (SLM) and Scanning Electron Microscopes (SEM). We found that the scattering mode for ambient light and fluorescent mode, the nanocarriers leakage induces large particles distributed equilibrium mostly in region 15 nm to 62 nm. We consider the robustness of the thermal infusion of our sensor, the change in any temperature over a neighborhood of 4°C, 14°C, 24°C and results are shown as fitting indicators directly associated with the gap length in a photon multiplier tube gaps. The attributed spectrum exceeded pathway in the Fabry-Perot cavity corresponds to asynchronous yet orthogonally coherent or non-coherent reflected laser actuation. We expose our results for error propagation across various grid patterns over a 1 mm2 section.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"94 1","pages":"48-51"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81612085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514333
Z. Waqar, Bishnu R. Dahal, E. Mutunga, Marzieh Savadkoohi, Uzma Amir, Pius Suh, Hayden Brown, Andrew Grizzle, Christophe D'Angelo, P. Tyagi
The hysteresis loop investigations of different size magnetic tunnel junction molecular spintronics devices (MTJMSD) have been done by Monte Carlo simulation (MCS). We employed a continuous MCS algorithm to investigate single-molecule magnet SMM's spin state's impact as a function of molecular exchange coupling strength. The applied magnetic fields were ramped at a variety of ranges of increments, unfolding physics behind the magnetization nature of each MTJMSD. The magnetic moment changes with applied magnetic fields exhibit the characteristics of devices being studied. The MTJMSDs were studied for ferromagnetic and antiferromagnetic exchange couplings. The magnetic moment saturation, retentivity, coercivity, and permeability are studied.
{"title":"The Hysteresis LOOP Studies Of Magnetic TunnelJunction-basedMolecular Spintronics Devices (mtjmsd) Employing Monte Carlo Simulations","authors":"Z. Waqar, Bishnu R. Dahal, E. Mutunga, Marzieh Savadkoohi, Uzma Amir, Pius Suh, Hayden Brown, Andrew Grizzle, Christophe D'Angelo, P. Tyagi","doi":"10.1109/NANO51122.2021.9514333","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514333","url":null,"abstract":"The hysteresis loop investigations of different size magnetic tunnel junction molecular spintronics devices (MTJMSD) have been done by Monte Carlo simulation (MCS). We employed a continuous MCS algorithm to investigate single-molecule magnet SMM's spin state's impact as a function of molecular exchange coupling strength. The applied magnetic fields were ramped at a variety of ranges of increments, unfolding physics behind the magnetization nature of each MTJMSD. The magnetic moment changes with applied magnetic fields exhibit the characteristics of devices being studied. The MTJMSDs were studied for ferromagnetic and antiferromagnetic exchange couplings. The magnetic moment saturation, retentivity, coercivity, and permeability are studied.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"12 1","pages":"337-340"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81849691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514353
SeokKim Yoon, C. Baek, B. Kong
We show that the operating frequency of surface acoustic wave filter can be significantly improved by adopting an emerging two-dimensional material: hexagonal boron nitride. Electromechanical properties estimated from first principles' analysis revealed that the material has the potential to realize RF filters in mm-Wave. The following piezoelectric simulation demonstrated an operation frequency as high as 36 GHz, which corresponds to Ka-band (from 26.5 to 40 GHz), with the insertion loss of 3 dB. This was achieved with the 150 nm period interdigital transducer on hexagonal boron nitride. Fabricating this scale of metal gratings is not very difficult with advanced lithography technology. As such, a low-power RF filter for 5G and beyond can be realized with the surface acoustic wave of hexagonal boron nitride.
{"title":"mm-Wave Surface Acoustic Wave Filter based on Hexagonal Boron Nitride","authors":"SeokKim Yoon, C. Baek, B. Kong","doi":"10.1109/NANO51122.2021.9514353","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514353","url":null,"abstract":"We show that the operating frequency of surface acoustic wave filter can be significantly improved by adopting an emerging two-dimensional material: hexagonal boron nitride. Electromechanical properties estimated from first principles' analysis revealed that the material has the potential to realize RF filters in mm-Wave. The following piezoelectric simulation demonstrated an operation frequency as high as 36 GHz, which corresponds to Ka-band (from 26.5 to 40 GHz), with the insertion loss of 3 dB. This was achieved with the 150 nm period interdigital transducer on hexagonal boron nitride. Fabricating this scale of metal gratings is not very difficult with advanced lithography technology. As such, a low-power RF filter for 5G and beyond can be realized with the surface acoustic wave of hexagonal boron nitride.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"34 1","pages":"138-141"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90401997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514312
A. Bakambekova, O. Krestinskaya, A. James
Gated Pixel Convolution Neural Network (Pix-eICNN) is a computationally intensive network that is useful for generating visual data. The prediction and generating pixels is a challenging but useful task for many fields such as forensics, machine vision and robotics. However, implementing PixeICNN in edge devices is a challenging task due to learning complexity and computational limits. In this paper, we present the design of neuro-memristive circuits for computing PixelCNN cells in analog domain as a coprocessor unit in edge devices. The architecture was designed using 180nm CMOS technology and carbon-chalcogenide memristive devices. On-chip area of the proposed architecture unit is 24.756mm2, while power depends on the size of the input image and the configuration of the overall network. The power required to generate the images sequentially is 154.336mW.
{"title":"Generate while Sensing - Intelligent Imaging with Memristive Pixel-CNN","authors":"A. Bakambekova, O. Krestinskaya, A. James","doi":"10.1109/NANO51122.2021.9514312","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514312","url":null,"abstract":"Gated Pixel Convolution Neural Network (Pix-eICNN) is a computationally intensive network that is useful for generating visual data. The prediction and generating pixels is a challenging but useful task for many fields such as forensics, machine vision and robotics. However, implementing PixeICNN in edge devices is a challenging task due to learning complexity and computational limits. In this paper, we present the design of neuro-memristive circuits for computing PixelCNN cells in analog domain as a coprocessor unit in edge devices. The architecture was designed using 180nm CMOS technology and carbon-chalcogenide memristive devices. On-chip area of the proposed architecture unit is 24.756mm2, while power depends on the size of the input image and the configuration of the overall network. The power required to generate the images sequentially is 154.336mW.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"103 1","pages":"112-115"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80635346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514302
Dexing Liu, Weihong Huang, Qinqi Ren, M. Zhang
A photoinduced electrostatic doping effect based on bottom-gate carbon nanotube field-effect transistors (CNT-FETs) with poly (urea-urethane) as dielectric is reported for the first time. The transistors exhibit significant changes in their transfer characteristics as a result of low-intensity visible light illumination (~6.2 m W cm−2), mainly including the increase in the order of magnitude of the on-current and a shift in threshold voltage. The photoinduced phenomenon can be explained by a photoinduced electron trapping model, in which the photogenerated electrons in the Si-gate are trapped by the polymer dielectric layer at a negative gate voltage and induces more hole carriers in the semiconducting carbon nanotubes (S-CNTs) channel.
首次报道了以聚脲-氨基甲酸乙酯为介质的底栅碳纳米管场效应晶体管(cnt - fet)的光致静电掺杂效应。在低强度可见光照射下(~6.2 m W cm−2)，晶体管的传输特性发生了显著变化，主要包括导通电流的数量级增加和阈值电压的移位。光致现象可以通过光致电子捕获模型来解释，其中硅栅极中的光生电子在负栅极电压下被聚合物介电层捕获，并在半导体碳纳米管(S-CNTs)通道中诱导出更多空穴载流子。
{"title":"A Photoinduced Electrostatic Doping Effect in Carbon Nanotube Field-Effect Transistors","authors":"Dexing Liu, Weihong Huang, Qinqi Ren, M. Zhang","doi":"10.1109/NANO51122.2021.9514302","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514302","url":null,"abstract":"A photoinduced electrostatic doping effect based on bottom-gate carbon nanotube field-effect transistors (CNT-FETs) with poly (urea-urethane) as dielectric is reported for the first time. The transistors exhibit significant changes in their transfer characteristics as a result of low-intensity visible light illumination (~6.2 m W cm−2), mainly including the increase in the order of magnitude of the on-current and a shift in threshold voltage. The photoinduced phenomenon can be explained by a photoinduced electron trapping model, in which the photogenerated electrons in the Si-gate are trapped by the polymer dielectric layer at a negative gate voltage and induces more hole carriers in the semiconducting carbon nanotubes (S-CNTs) channel.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"88 1","pages":"478-481"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80001129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514301
Sina Zare Pakzad, M. N. Esfahani, B. E. Alaca
Molecular dynamics (MD) simulations are employed to investigate the influence of native oxide layer on the mechanical properties of Si nanowires (NWs) through analyzing surface stress and surface energy effect. This work studies the tensile response of Si NWs along <100> and <110> crystal orientations. MD results are compared with the traditional core-shell model on the estimation of the modulus of elasticity of Si NWs with a native oxide layer. Density functional theory (DFT) methods are used to verify MD results on the surface energy calculations. Surface stress and surface elastic constants are studied for native oxide surface using MD simulations and compared with unreconstructed surfaces. In this work, the role of native oxide is addressed to understand the difference between experimental and computational findings on the modulus of elasticity of Si NWs.
{"title":"Molecular Dynamics Study of Orientation-dependent Tensile Properties of Si Nanowires with Native Oxide: Surface Stress and Surface Energy Effects","authors":"Sina Zare Pakzad, M. N. Esfahani, B. E. Alaca","doi":"10.1109/NANO51122.2021.9514301","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514301","url":null,"abstract":"Molecular dynamics (MD) simulations are employed to investigate the influence of native oxide layer on the mechanical properties of Si nanowires (NWs) through analyzing surface stress and surface energy effect. This work studies the tensile response of Si NWs along <100> and <110> crystal orientations. MD results are compared with the traditional core-shell model on the estimation of the modulus of elasticity of Si NWs with a native oxide layer. Density functional theory (DFT) methods are used to verify MD results on the surface energy calculations. Surface stress and surface elastic constants are studied for native oxide surface using MD simulations and compared with unreconstructed surfaces. In this work, the role of native oxide is addressed to understand the difference between experimental and computational findings on the modulus of elasticity of Si NWs.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"10 1","pages":"370-373"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88343208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-07-28DOI: 10.1109/NANO51122.2021.9514360
Farid Sayar Irani, M. Yapici
Graphene with its mechanical strength and superior electrical and thermal conductivity is an interesting material for microelectronics. Despite its favorable properties, graphene has not fully transitioned as a mainstream electronic material due to challenges involved in its patterning and integration to standard device fabrication process flows. In this study, an elastomeric stamp-assisted exfoliation and transfer approach has been developed, where patterned graphene layers were seamlessly transferred by contact with a polydimethylsiloxane (PDMS) stamp with an applied weight of ~ 30 grams or less. With the approach presented herein, lengthy wet etching cycles to remove the underlying nickel or copper precursors during CVD-growth of graphene have been eliminated. Results indicate that the proposed technique is capable of direct, etch-free transfer of various graphene patterns up to ~ 50 µm in size and with high yield. Optical microscopy, SEM imaging, atomic force microscopy (AFM), and Raman spectroscopy characterization of transferred layers demonstrate retainment of the pristine graphene quality after the elastomeric stamp-assisted exfoliation and transfer process with no contamination or damage on the transferred graphene patterns.
{"title":"Elastomeric Stamp-Assisted Exfoliation and Transfer of Patterned Graphene Layers","authors":"Farid Sayar Irani, M. Yapici","doi":"10.1109/NANO51122.2021.9514360","DOIUrl":"https://doi.org/10.1109/NANO51122.2021.9514360","url":null,"abstract":"Graphene with its mechanical strength and superior electrical and thermal conductivity is an interesting material for microelectronics. Despite its favorable properties, graphene has not fully transitioned as a mainstream electronic material due to challenges involved in its patterning and integration to standard device fabrication process flows. In this study, an elastomeric stamp-assisted exfoliation and transfer approach has been developed, where patterned graphene layers were seamlessly transferred by contact with a polydimethylsiloxane (PDMS) stamp with an applied weight of ~ 30 grams or less. With the approach presented herein, lengthy wet etching cycles to remove the underlying nickel or copper precursors during CVD-growth of graphene have been eliminated. Results indicate that the proposed technique is capable of direct, etch-free transfer of various graphene patterns up to ~ 50 µm in size and with high yield. Optical microscopy, SEM imaging, atomic force microscopy (AFM), and Raman spectroscopy characterization of transferred layers demonstrate retainment of the pristine graphene quality after the elastomeric stamp-assisted exfoliation and transfer process with no contamination or damage on the transferred graphene patterns.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"48 1","pages":"64-67"},"PeriodicalIF":0.0,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89206138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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