2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)最新文献
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234815
J. Vojtěch, O. Havlis, Sarbojeet Bhowmick, Martin Šlapák, P. Munster, T. Horváth, R. Velc, J. Kundrát, L. Altmannova, Rudolf Vohnout, P. Škoda, V. Smotlacha
In this paper, we present results of experimental two way transmission of precise time over 400 km fully reciprocal bi-directionally amplified optical path outside the telecommunication C band. Used was the White Rabbit system, which combines synchronous Ethernet and Precise Time Protocol (IEEE-1588) however previously developed Time Transfer Adapters should provide slightly better performance.
{"title":"White Rabbit Single Fibre Bidirectional Transmission of Precise Time Using Unconventional Wavelengths","authors":"J. Vojtěch, O. Havlis, Sarbojeet Bhowmick, Martin Šlapák, P. Munster, T. Horváth, R. Velc, J. Kundrát, L. Altmannova, Rudolf Vohnout, P. Škoda, V. Smotlacha","doi":"10.1109/IFCS-ISAF41089.2020.9234815","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234815","url":null,"abstract":"In this paper, we present results of experimental two way transmission of precise time over 400 km fully reciprocal bi-directionally amplified optical path outside the telecommunication C band. Used was the White Rabbit system, which combines synchronous Ethernet and Precise Time Protocol (IEEE-1588) however previously developed Time Transfer Adapters should provide slightly better performance.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"51 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89751338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234911
A. Ozgurluk, C. Nguyen
A micromechanical structure for on-chip strain sensing maps strain-induced gap changes to resonance frequency shifts while employing differential strategies to null out bias uncertainty, all towards repeatable measurement of sub-nm displacement changes that equate to sub-$-muvarepsilon$ strain increments. The key enabler here is the use of gap-dependent electrical stiffness to shift resonance frequencies as structural elements stretch or shrink to relieve stress. An output based on the difference frequency between two close proximity structures with unequal stress arm lengths (cf. Fig. 1) removes uncertainty on the initial gap spacing and permits a $206 text{Hz}/muvarepsilon$ scale factor. The ability to precisely measure the frequency of the high-$Q$ (∼4000) structures, down to at least 1 Hz, puts the resolution of this sensor at least $5mathrm{n}varepsilon$ (or 790 Pa for polysilicon). An on-chip highly sensitive strain sensing device like this will likely be instrumental to managing stress changes over the lifetime of micromechanical circuits, such as oscillators and filters.
{"title":"Precision Resonant Beam Strain Sensor Employing Gap-Dependent Frequency Shift","authors":"A. Ozgurluk, C. Nguyen","doi":"10.1109/IFCS-ISAF41089.2020.9234911","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234911","url":null,"abstract":"A micromechanical structure for on-chip strain sensing maps strain-induced gap changes to resonance frequency shifts while employing differential strategies to null out bias uncertainty, all towards repeatable measurement of sub-nm displacement changes that equate to sub-$-muvarepsilon$ strain increments. The key enabler here is the use of gap-dependent electrical stiffness to shift resonance frequencies as structural elements stretch or shrink to relieve stress. An output based on the difference frequency between two close proximity structures with unequal stress arm lengths (cf. Fig. 1) removes uncertainty on the initial gap spacing and permits a $206 text{Hz}/muvarepsilon$ scale factor. The ability to precisely measure the frequency of the high-$Q$ (∼4000) structures, down to at least 1 Hz, puts the resolution of this sensor at least $5mathrm{n}varepsilon$ (or 790 Pa for polysilicon). An on-chip highly sensitive strain sensing device like this will likely be instrumental to managing stress changes over the lifetime of micromechanical circuits, such as oscillators and filters.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"195 2 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85602791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234937
J. Esterline, Dewain Stange
The temperature performance of Oven Controlled Crystal Oscillators (OCXOs) and Double Oven Controlled Crystal Oscillators (DOCXOs) have been the pinnacle of quartz crystal frequency versus temperature performance for decades. DOCXOs can provide frequency versus temperature stabilities under +/− 1ppb. This superior performance comes at the cost of the power consumption of running two ovens, as well as footprint impact from the extra circuitry. Wide temperature ranges are also a challenge for DOCXOs due to the need to run the ovens at very high temperatures. This paper focuses on a secondary method of compensating OCXOs for frequency versus temperature performance using a segmented polynomial array compensation. This method of compensation can achieve results unobtainable through conventional compensation methods. A group of eight OCXOs in a $20 text{mm} times 20 text{mm}$ package with SC cut crystals were studied for this paper. The inherent mean frequency versus temperature performance of the most improved unit was ±4.29 ppb over the industrial range of −40 to 85 °C. Using 4 segments to compensate the unit the frequency versus temperature performance was reduced to mean performance of ±0.153 ppb over the industrial range. This is a 28 to 1 improvement over the OCXOs inherent performance. This compensated single oven technology provides superior temperature performance over a wider temperature range with lower power consumption than can be achieved with traditional methods. The theory of this compensation method will be discussed, and data showing the results of frequency versus temperature compensation on the qualification group will be presented.
{"title":"Secondary Frequency Versus Temperature Compensation of an OCXO Using a Segmented Polynomial Array","authors":"J. Esterline, Dewain Stange","doi":"10.1109/IFCS-ISAF41089.2020.9234937","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234937","url":null,"abstract":"The temperature performance of Oven Controlled Crystal Oscillators (OCXOs) and Double Oven Controlled Crystal Oscillators (DOCXOs) have been the pinnacle of quartz crystal frequency versus temperature performance for decades. DOCXOs can provide frequency versus temperature stabilities under +/− 1ppb. This superior performance comes at the cost of the power consumption of running two ovens, as well as footprint impact from the extra circuitry. Wide temperature ranges are also a challenge for DOCXOs due to the need to run the ovens at very high temperatures. This paper focuses on a secondary method of compensating OCXOs for frequency versus temperature performance using a segmented polynomial array compensation. This method of compensation can achieve results unobtainable through conventional compensation methods. A group of eight OCXOs in a $20 text{mm} times 20 text{mm}$ package with SC cut crystals were studied for this paper. The inherent mean frequency versus temperature performance of the most improved unit was ±4.29 ppb over the industrial range of −40 to 85 °C. Using 4 segments to compensate the unit the frequency versus temperature performance was reduced to mean performance of ±0.153 ppb over the industrial range. This is a 28 to 1 improvement over the OCXOs inherent performance. This compensated single oven technology provides superior temperature performance over a wider temperature range with lower power consumption than can be achieved with traditional methods. The theory of this compensation method will be discussed, and data showing the results of frequency versus temperature compensation on the qualification group will be presented.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"55 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85640139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234833
K. Coleman, J. Walker, Wanlin Zhu, S. Ko, P. Mardilovich, S. Trolier-McKinstry
Understanding the failure mechanisms of piezoelectric thin films is critical for the commercialization of piezoelectric microelectromechanical systems. This paper describes the failure of $0.6 mu mathrm{m}$ lead zirconate titanate (PZT) thin films on Si wafers with different in-plane stresses under large electric fields. The films failed by a combination of cracking and thermal breakdown events. It was found that the crack initiation and propagation behavior varied with the stress state of the films. The total stress required for crack initiation was estimated to be near 500 MPa. As expected, cracks propagated perpendicular to the maximum tensile stress direction. Thermal breakdown events and cracks were correlated, suggesting coupling between electrical and mechanical failure. It was also found that films that were released from the underlying substrates were less susceptible to failure by cracking. It was proposed that during electric field loading the released film stacks were able to bow and alleviate some of the stress. Released films may also experience enhanced domain wall motion that increases their fracture toughness. The results indicate that both applied stress and clamping conditions play important roles in the electromechancial failure of piezoelectric thin films.
了解压电薄膜的失效机制对压电微机电系统的商业化至关重要。本文描述了$0.6 mu mathm {m}$锆钛酸铅(PZT)薄膜在不同面内应力的硅晶片上在大电场作用下的失效。由于开裂和热击穿事件的共同作用，薄膜失效。结果表明，裂纹的萌生和扩展行为随薄膜应力状态的变化而变化。裂纹萌生所需的总应力估计在500 MPa左右。正如预期的那样，裂纹垂直于最大拉应力方向扩展。热击穿事件和裂纹相关，表明电气和机械故障之间存在耦合。研究还发现，从底层基材中释放出来的薄膜不易因开裂而失效。提出在电场加载过程中，释放的薄膜层能够弯曲并减轻部分应力。释放的薄膜也可能经历增强的畴壁运动，从而增加其断裂韧性。结果表明，外加应力和夹紧条件对压电薄膜的机电破坏都有重要影响。
{"title":"Failure Mechanisms of Lead Zirconate Titanate Thin Films during Electromechanical Loading","authors":"K. Coleman, J. Walker, Wanlin Zhu, S. Ko, P. Mardilovich, S. Trolier-McKinstry","doi":"10.1109/IFCS-ISAF41089.2020.9234833","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234833","url":null,"abstract":"Understanding the failure mechanisms of piezoelectric thin films is critical for the commercialization of piezoelectric microelectromechanical systems. This paper describes the failure of $0.6 mu mathrm{m}$ lead zirconate titanate (PZT) thin films on Si wafers with different in-plane stresses under large electric fields. The films failed by a combination of cracking and thermal breakdown events. It was found that the crack initiation and propagation behavior varied with the stress state of the films. The total stress required for crack initiation was estimated to be near 500 MPa. As expected, cracks propagated perpendicular to the maximum tensile stress direction. Thermal breakdown events and cracks were correlated, suggesting coupling between electrical and mechanical failure. It was also found that films that were released from the underlying substrates were less susceptible to failure by cracking. It was proposed that during electric field loading the released film stacks were able to bow and alleviate some of the stress. Released films may also experience enhanced domain wall motion that increases their fracture toughness. The results indicate that both applied stress and clamping conditions play important roles in the electromechancial failure of piezoelectric thin films.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"90 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80478167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234933
Hakhamanesh Mansoorzare, R. Abdolvand
Acoustoelectric delay lines (AEDL) fabricated on a composite lithium niobate-silicon (LN-Si) platform could enable acoustoelectric (AE) nonreciprocity and gain provided that the material properties of the LN-Si heterostructure are properly selected. Among such properties are the carrier density and mobility in the Si substrate. However, the bulk Si properties are subject to substantial perturbation at the LN-Si interface as a result of interfacial trapped charges at dislocations and dangling bond sites. The metal-insulator-semiconductor (MIS) capacitor inherently formed in such heterostructures, however, could allow for some level of control over the Si carrier distribution at the LN film interface. In this work, we demonstrate that the AE gain achieved by the momentum transfer from the carriers drifting in Si and the subsequent nonreciprocity could be fine-tuned and the efficiency of the device could be improved by utilizing the MIS capacitor. The device efficiency is found to be enhanced once the majority electron carriers in n-type Si are slightly depleted at the LN-Si interface resulting in ∼1.5 times improvement in the AE gain at a lower bias current, increasing the efficiency by ∼60%.
{"title":"Trapped Charge Effect on Composite Lithium Niobate-Silicon Acoustoelectric Delay Lines","authors":"Hakhamanesh Mansoorzare, R. Abdolvand","doi":"10.1109/IFCS-ISAF41089.2020.9234933","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234933","url":null,"abstract":"Acoustoelectric delay lines (AEDL) fabricated on a composite lithium niobate-silicon (LN-Si) platform could enable acoustoelectric (AE) nonreciprocity and gain provided that the material properties of the LN-Si heterostructure are properly selected. Among such properties are the carrier density and mobility in the Si substrate. However, the bulk Si properties are subject to substantial perturbation at the LN-Si interface as a result of interfacial trapped charges at dislocations and dangling bond sites. The metal-insulator-semiconductor (MIS) capacitor inherently formed in such heterostructures, however, could allow for some level of control over the Si carrier distribution at the LN film interface. In this work, we demonstrate that the AE gain achieved by the momentum transfer from the carriers drifting in Si and the subsequent nonreciprocity could be fine-tuned and the efficiency of the device could be improved by utilizing the MIS capacitor. The device efficiency is found to be enhanced once the majority electron carriers in n-type Si are slightly depleted at the LN-Si interface resulting in ∼1.5 times improvement in the AE gain at a lower bias current, increasing the efficiency by ∼60%.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"12 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88117581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234811
Shuji Tanaka, M. Kadota
Ultrathin lithium niobite (LN) and lithium tantalate (LT) have opened a new era of acoustic wave devices. The performances such as impedance ratio, bandwidth and temperature stability of new types of devices are incredibly high compared with those of conventional ones. The R&D is showing a kind of boom in both industry and academia. In this paper, plate wave devices and HAL (Hetero Acoustic Layer) SAW (surface acoustic wave) devices using ultrathin LN or LT developed by the authors' group are described.
{"title":"IDT-based Acoustic Wave Devices Using Ultrathin Lithium Niobate and Lithium Tantalate","authors":"Shuji Tanaka, M. Kadota","doi":"10.1109/IFCS-ISAF41089.2020.9234811","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234811","url":null,"abstract":"Ultrathin lithium niobite (LN) and lithium tantalate (LT) have opened a new era of acoustic wave devices. The performances such as impedance ratio, bandwidth and temperature stability of new types of devices are incredibly high compared with those of conventional ones. The R&D is showing a kind of boom in both industry and academia. In this paper, plate wave devices and HAL (Hetero Acoustic Layer) SAW (surface acoustic wave) devices using ultrathin LN or LT developed by the authors' group are described.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"20 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84245858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234812
Xuan He, Qing Wang, Weibin Xie, Nan Chen, Zezheng Xiong, X. Qi, Xuzong Chen
As optical frequency standard [1]–[4] and frequency comb developed with quite high precision(10−18 or 10−19) and commercial H-maser developed with quite good short-term stability(10−15), the only and core competitiveness of Cesium beam frequency standards(CBFS) are reliability and long-term stability today. We developed a high performance and portable optically pumped CBFS and the instability is $3times 10^{-13}/sqrt{tau}$ with the flicker floor expecting to be $3times 10^{-15}$. It has the best longterm performance of the optically pumped CBFS operated with an 852nm distributed feedback(DFB) laser ever measured with such a good short-term stability. Such a good result is attributed to the excellent control of the microwave power, C field and laser power. The portable CBFS can be used in many fields and is getting ripeness to substitute the existing magnetic selected products.
{"title":"A High Performance and Portable Optically Pumped Cesium Beam Frequency Standard","authors":"Xuan He, Qing Wang, Weibin Xie, Nan Chen, Zezheng Xiong, X. Qi, Xuzong Chen","doi":"10.1109/IFCS-ISAF41089.2020.9234812","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234812","url":null,"abstract":"As optical frequency standard [1]–[4] and frequency comb developed with quite high precision(10−18 or 10−19) and commercial H-maser developed with quite good short-term stability(10−15), the only and core competitiveness of Cesium beam frequency standards(CBFS) are reliability and long-term stability today. We developed a high performance and portable optically pumped CBFS and the instability is $3times 10^{-13}/sqrt{tau}$ with the flicker floor expecting to be $3times 10^{-15}$. It has the best longterm performance of the optically pumped CBFS operated with an 852nm distributed feedback(DFB) laser ever measured with such a good short-term stability. Such a good result is attributed to the excellent control of the microwave power, C field and laser power. The portable CBFS can be used in many fields and is getting ripeness to substitute the existing magnetic selected products.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"257 11","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91445799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234854
Markus Gellesch, Richard Barron, Jonathan M. Jones, Alok Singh, Qiushuo Sun, K. Bongs, Y. Singh
We present our work on a compact and flexible Optical Lattice Clock Testbed System. This system helps realizing a compact and transportable strontium-based optical atomic clock demonstrator built from industry-developed subsystems – a deliverable of the iqClock project. The demonstrator will be integrated at the University of Birmingham. In order to facilitate the system integration of the demonstrator, we use the testbed system to assess the performance of the industry-built components and subsystems. The testbed is completed in its first phase, capable of realizing ultra-cold atoms. In a subsequent phase, we will transform the testbed system into a strontium-based frequency standard.
{"title":"An Optical Lattice Clock Testbed System for the iqClock Project Demonstrator","authors":"Markus Gellesch, Richard Barron, Jonathan M. Jones, Alok Singh, Qiushuo Sun, K. Bongs, Y. Singh","doi":"10.1109/IFCS-ISAF41089.2020.9234854","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234854","url":null,"abstract":"We present our work on a compact and flexible Optical Lattice Clock Testbed System. This system helps realizing a compact and transportable strontium-based optical atomic clock demonstrator built from industry-developed subsystems – a deliverable of the iqClock project. The demonstrator will be integrated at the University of Birmingham. In order to facilitate the system integration of the demonstrator, we use the testbed system to assess the performance of the industry-built components and subsystems. The testbed is completed in its first phase, capable of realizing ultra-cold atoms. In a subsequent phase, we will transform the testbed system into a strontium-based frequency standard.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"53 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83686693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234821
Yao Zhu, Nan Wang, Chen Liu, Ying Zhang
This work reviews various methods which improve the effective coupling coefficient (${k^{2}}_{eff}$) of non-bulk acoustic wave (BAW) aluminum nitride (AlN) based RF MEMS resonators, mainly focusing on the innovative structural design of the resonators. ${k^{2}}_{eff}$ is the key parameter for a resonator in communication applications because it measures the achievable fractional bandwidth of the filter constructed. The resonator's configuration, dimension, material stack and the fabrication process will all have impact on its ${k^{2}}_{eff}$. In this paper, the authors will review the efforts in improving the ${k^{2}}_{eff}$ of piezoelectric MEMS resonators from research community in the past 15 years, mainly from the following three approaches: coupling lateral wave with vertical wave, exciting two-dimensional (2-D) lateral wave, as well as coupling 2-D lateral wave with vertical wave. The material will be limited to AlN family, which is proven to be manageable for manufacturing. The authors will also try to make recommendations to the effectiveness of various approaches and the path forward.
{"title":"A Review of the Approaches to Improve The Effective Coupling Coefficient of AlN based RF MEMS Resonators","authors":"Yao Zhu, Nan Wang, Chen Liu, Ying Zhang","doi":"10.1109/IFCS-ISAF41089.2020.9234821","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234821","url":null,"abstract":"This work reviews various methods which improve the effective coupling coefficient (${k^{2}}_{eff}$) of non-bulk acoustic wave (BAW) aluminum nitride (AlN) based RF MEMS resonators, mainly focusing on the innovative structural design of the resonators. ${k^{2}}_{eff}$ is the key parameter for a resonator in communication applications because it measures the achievable fractional bandwidth of the filter constructed. The resonator's configuration, dimension, material stack and the fabrication process will all have impact on its ${k^{2}}_{eff}$. In this paper, the authors will review the efforts in improving the ${k^{2}}_{eff}$ of piezoelectric MEMS resonators from research community in the past 15 years, mainly from the following three approaches: coupling lateral wave with vertical wave, exciting two-dimensional (2-D) lateral wave, as well as coupling 2-D lateral wave with vertical wave. The material will be limited to AlN family, which is proven to be manageable for manufacturing. The authors will also try to make recommendations to the effectiveness of various approaches and the path forward.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"122 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80982255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234886
Hsin-Tung Jen, Gayathri Pillai, Shengyou Liu, Sheng-Shian Li
An array of short mechanical couplers scheme to realize a support transducer enabled Wine-glass resonator/oscillator exhibiting a quality factor ($Q$) of 17,000 and an oscillator Phase Noise (PN) meeting the GSM spec. at 1 kHz and 1 MHz offsets has been demonstrated in this work. A 20.3-MHz Wine-glass resonator fabricated using the MEMSCAP platform is used to implement the oscillator. The meticulous structural and material engineering aspect of the resonator improves the quality factor of the design from 9,500 to 17,000, making the resonator an ideal candidate for high-end oscillator applications. An attenuator and phase control methodology along with commercially available amplifiers has been used to realize a low phase noise oscillator with a PN of −134.1 dBc/Hz and −152.3 dBc/Hz at 1 kHz and 1 MHz offsets respectively while divided down to GSM's 13 MHz.
{"title":"Low Phase Noise Wine-Glass Oscillator Realized Using Enhanced Support Transducer Design","authors":"Hsin-Tung Jen, Gayathri Pillai, Shengyou Liu, Sheng-Shian Li","doi":"10.1109/IFCS-ISAF41089.2020.9234886","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234886","url":null,"abstract":"An array of short mechanical couplers scheme to realize a support transducer enabled Wine-glass resonator/oscillator exhibiting a quality factor ($Q$) of 17,000 and an oscillator Phase Noise (PN) meeting the GSM spec. at 1 kHz and 1 MHz offsets has been demonstrated in this work. A 20.3-MHz Wine-glass resonator fabricated using the MEMSCAP platform is used to implement the oscillator. The meticulous structural and material engineering aspect of the resonator improves the quality factor of the design from 9,500 to 17,000, making the resonator an ideal candidate for high-end oscillator applications. An attenuator and phase control methodology along with commercially available amplifiers has been used to realize a low phase noise oscillator with a PN of −134.1 dBc/Hz and −152.3 dBc/Hz at 1 kHz and 1 MHz offsets respectively while divided down to GSM's 13 MHz.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"49 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84445367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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