2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)最新文献
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234871
Martin Langer, Kai Heine, R. Bermbach, D. Sibold
Many time synchronization services use the Network Time Protocol (NTP), which resides in the upper OSI layers and is thus usually implemented in software. However, software-related runtimes reduce the synchronization accuracy and are further influenced by the cryptographic protection of time messages using the Network Time Security protocol (NTS). This paper examines these runtimes and shows the effects on popular NTP implementations. After separating these latencies into their components, we present different approaches for compensation by modifying the NTP timestamps. For non-correctable latencies, this paper provides mitigation strategies to improve the synchronicity.
{"title":"Analysis and Compensation of Latencies in NTS-secured NTP Time Synchronization","authors":"Martin Langer, Kai Heine, R. Bermbach, D. Sibold","doi":"10.1109/IFCS-ISAF41089.2020.9234871","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234871","url":null,"abstract":"Many time synchronization services use the Network Time Protocol (NTP), which resides in the upper OSI layers and is thus usually implemented in software. However, software-related runtimes reduce the synchronization accuracy and are further influenced by the cryptographic protection of time messages using the Network Time Security protocol (NTS). This paper examines these runtimes and shows the effects on popular NTP implementations. After separating these latencies into their components, we present different approaches for compensation by modifying the NTP timestamps. For non-correctable latencies, this paper provides mitigation strategies to improve the synchronicity.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"22 1","pages":"1-10"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84107426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234850
Mingyo Park, A. Ansari
This work reports on surface acoustic wave (SAW) and the super high frequency (SHF) Lamb wave resonators (LWR) with reflective gratings based on 400 nm-thick epitaxial Aluminum Scandium Nitride (AlScN) piezoelectric films. The films are grown on silicon substrates by molecular beam epitaxy (MBE), with $text{Sc}/(mathrm{A}1+text{Sc})$ ratio of 23%, which is the highest Sc concentration, reported to date for BAW/SAW resonators based on AlN epitaxial films. We first demonstrate a SAW resonator, with reflective gratings. The Si substrate of the SAW resonator is then removed from the backside, to form a suspended 400 nm-thick plate. A floating bottom metal electrode is deposited from the backside to enhance the effective electromechanical coefficient (${k_{eff}}^{2}$) of the Lamb wave resonators. A high ${k_{eff}}^{2}$ value of 7.45% at a resonant frequency of 4.92 GHz is reported in this work, yielding ${k_{eff}}^{2}times Q_{m}$ of 7.3. To the authors' knowledge, this work marks the highest ${k_{eff}}^{2}$ achieved for >3GHz AlN-based Lamb wave resonators to date.
{"title":"Epitaxial Al0.77Sc0.23N SAW and Lamb Wave Resonators","authors":"Mingyo Park, A. Ansari","doi":"10.1109/IFCS-ISAF41089.2020.9234850","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234850","url":null,"abstract":"This work reports on surface acoustic wave (SAW) and the super high frequency (SHF) Lamb wave resonators (LWR) with reflective gratings based on 400 nm-thick epitaxial Aluminum Scandium Nitride (AlScN) piezoelectric films. The films are grown on silicon substrates by molecular beam epitaxy (MBE), with $text{Sc}/(mathrm{A}1+text{Sc})$ ratio of 23%, which is the highest Sc concentration, reported to date for BAW/SAW resonators based on AlN epitaxial films. We first demonstrate a SAW resonator, with reflective gratings. The Si substrate of the SAW resonator is then removed from the backside, to form a suspended 400 nm-thick plate. A floating bottom metal electrode is deposited from the backside to enhance the effective electromechanical coefficient (${k_{eff}}^{2}$) of the Lamb wave resonators. A high ${k_{eff}}^{2}$ value of 7.45% at a resonant frequency of 4.92 GHz is reported in this work, yielding ${k_{eff}}^{2}times Q_{m}$ of 7.3. To the authors' knowledge, this work marks the highest ${k_{eff}}^{2}$ achieved for >3GHz AlN-based Lamb wave resonators to date.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"2 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83478020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234934
Xing Chen, Honglei Yang, Peng Fei, Xiaobo Xue, Shengkang Zhang, J. Ge
The electrodeless mercury isotope lamp is the light source of the mercury ion microwave frequency standard, which optically pumps ions to higher energy level and realizes the state selection. We describe mercury isotope lamp radiation and design principles. We show the relative radiation light intensity ratio of atom spectrum 254nm to ion spectrum 194nm is around 60.
{"title":"The high frequency electrodeless mercury isotope lamp","authors":"Xing Chen, Honglei Yang, Peng Fei, Xiaobo Xue, Shengkang Zhang, J. Ge","doi":"10.1109/IFCS-ISAF41089.2020.9234934","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234934","url":null,"abstract":"The electrodeless mercury isotope lamp is the light source of the mercury ion microwave frequency standard, which optically pumps ions to higher energy level and realizes the state selection. We describe mercury isotope lamp radiation and design principles. We show the relative radiation light intensity ratio of atom spectrum 254nm to ion spectrum 194nm is around 60.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"48 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77337990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234896
Christopher W. Peterson, Mengze Sha, G. Bahl
This paper presents experimental measurements of a 1.4 GHz gyrator and isolator based on modulation-induced nonreciprocal coupling, implemented in a microstrip circuit. A tunable microwave amplifier is used to tune the Q-factor of the resonant circuit, which can be reconfigured between lossless gyration and lossy isolation. Bandwidth tuning is also demonstrated for both gyration and isolation.
{"title":"Reconfigurable Gyration and Isolation through Nonreciprocal Coupling to Resonators with Tunable Q-Factor","authors":"Christopher W. Peterson, Mengze Sha, G. Bahl","doi":"10.1109/IFCS-ISAF41089.2020.9234896","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234896","url":null,"abstract":"This paper presents experimental measurements of a 1.4 GHz gyrator and isolator based on modulation-induced nonreciprocal coupling, implemented in a microstrip circuit. A tunable microwave amplifier is used to tune the Q-factor of the resonant circuit, which can be reconfigured between lossless gyration and lossy isolation. Bandwidth tuning is also demonstrated for both gyration and isolation.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"52 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77672756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234819
O. Llopis, G. Bailly, Alexis Bougaud, Arnaud Fernandez
Different 1550 nm fibered lasers are compared versus their performances in terms of frequency (FM) noise and amplitude (AM) noise. The noise spectral density is spread over six to height decades for the FM noise and three to four decades for the AM noise, depending on the frequency offset. The lasers featuring the best FM noise performance are generally the worst versus the AM noise performance, although some compromises can be found.
{"title":"Experimental Investigations on Lasers FM and AM Noise","authors":"O. Llopis, G. Bailly, Alexis Bougaud, Arnaud Fernandez","doi":"10.1109/IFCS-ISAF41089.2020.9234819","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234819","url":null,"abstract":"Different 1550 nm fibered lasers are compared versus their performances in terms of frequency (FM) noise and amplitude (AM) noise. The noise spectral density is spread over six to height decades for the FM noise and three to four decades for the AM noise, depending on the frequency offset. The lasers featuring the best FM noise performance are generally the worst versus the AM noise performance, although some compromises can be found.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"224 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73944766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234941
D. Reis, S. Rzepka, K. Hiller
Leakage current degradation in a state-of-the-art integrated low-temperature PVD lead zirconate titanate (PZT) thin film stack is investigated over temperature and applied electric field for samples processed at three different conditions. It is demonstrated that degradation kinetics can be influenced by process conditions. Evaluation of the results provide new insight into the underlying physics and allow for further characterization of involved defects. It is proposed to interpret the change in degradation kinetics as modification of the mean hopping distance within the material. This allows to deduce the effective overlap integral of involved hopping states and marks another step towards understanding of defects in ferroelectric oxides.
{"title":"New Insight Into Defects and Degradation Kinetics in Lead Zirconate Titanate","authors":"D. Reis, S. Rzepka, K. Hiller","doi":"10.1109/IFCS-ISAF41089.2020.9234941","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234941","url":null,"abstract":"Leakage current degradation in a state-of-the-art integrated low-temperature PVD lead zirconate titanate (PZT) thin film stack is investigated over temperature and applied electric field for samples processed at three different conditions. It is demonstrated that degradation kinetics can be influenced by process conditions. Evaluation of the results provide new insight into the underlying physics and allow for further characterization of involved defects. It is proposed to interpret the change in degradation kinetics as modification of the mean hopping distance within the material. This allows to deduce the effective overlap integral of involved hopping states and marks another step towards understanding of defects in ferroelectric oxides.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"63 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76259582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234822
L. Colombo, Giuseppe Michetti, Michele Pirro, C. Cassella, G. Piazza, M. Rinaldi
This paper reports the first demonstration of a passive rectifier boosted by means of a microelectromechanical (MEM) X-cut Lithium Niobate (LN) Laterally Vibrating Resonator (LVR). A high-performance device operating around 110 MHz, exhibiting a loaded quality factor ($Q_{s}$) of 4,000 and showing an electromechanical coupling ($k_{t}^{2}$) of 29% is coupled to a commercial diode to provide a large passive voltage amplification of the RF driving signal. We show that the implementation of this device significantly increases the rectified DC voltage probed at the output of the rectifier. Voltage gains as high as 22 dB (13 V/V) are reported. The resonator demonstrated a 13 dB gain improvement compared to a high quality factor ($Q=50$) inductor implemented in the same system.
本文报道了利用微机电(MEM) x切割铌酸锂(LN)横向振动谐振器(LVR)推进的无源整流器的首次演示。一个工作在110 MHz左右的高性能器件，显示负载质量因子($Q_{s}$)为4,000，机电耦合($k_{t}^{2}$)为29%，耦合到商用二极管，以提供射频驱动信号的大无源电压放大。我们表明，该装置的实施显著提高整流器输出端探测到的整流直流电压。电压增益高达22 dB (13 V/V)。与同一系统中实现的高质量因数(Q=50)电感器相比，该谐振器的增益提高了13 dB。
{"title":"Zero Power X-cut LiNbO3 MEMS-based Radio Frequency Rectifier","authors":"L. Colombo, Giuseppe Michetti, Michele Pirro, C. Cassella, G. Piazza, M. Rinaldi","doi":"10.1109/IFCS-ISAF41089.2020.9234822","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234822","url":null,"abstract":"This paper reports the first demonstration of a passive rectifier boosted by means of a microelectromechanical (MEM) X-cut Lithium Niobate (LN) Laterally Vibrating Resonator (LVR). A high-performance device operating around 110 MHz, exhibiting a loaded quality factor ($Q_{s}$) of 4,000 and showing an electromechanical coupling ($k_{t}^{2}$) of 29% is coupled to a commercial diode to provide a large passive voltage amplification of the RF driving signal. We show that the implementation of this device significantly increases the rectified DC voltage probed at the output of the rectifier. Voltage gains as high as 22 dB (13 V/V) are reported. The resonator demonstrated a 13 dB gain improvement compared to a high quality factor ($Q=50$) inductor implemented in the same system.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"44 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78610269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234862
Qianyi Xie, S. Afshar, A. Ozgurluk, C. Nguyen
The use of a stress-buffered array-composite of six $13.4-mu mathrm{m}$ radius capacitive-gap transduced radial-contour mode polysilicon micromechanical disk resonators with 36.1-nm electrode-to-resonator gaps has enabled a Pierce oscillator centered at 199.2 MHz with phase noise marks of −104.7dBc/Hz at 1-kHz offset and −149.6dBc/Hz far from the carrier, sufficient for smartphones. The 12-kHz to 20-MHz integrated jitter is 163.3fs, which yields an excellent jitter FoM of −251dB. The key to this demonstration is the use of $lambda$ couplers to affect a 0° phase shift across the array terminals; and electrodeless resonators to buffer the effect of post-fabrication stress that otherwise might short disks to their electrodes when gaps are very small.
{"title":"199-MHz Polysilicon Micromechanical Disk Array-Composite Oscillator","authors":"Qianyi Xie, S. Afshar, A. Ozgurluk, C. Nguyen","doi":"10.1109/IFCS-ISAF41089.2020.9234862","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234862","url":null,"abstract":"The use of a stress-buffered array-composite of six $13.4-mu mathrm{m}$ radius capacitive-gap transduced radial-contour mode polysilicon micromechanical disk resonators with 36.1-nm electrode-to-resonator gaps has enabled a Pierce oscillator centered at 199.2 MHz with phase noise marks of −104.7dBc/Hz at 1-kHz offset and −149.6dBc/Hz far from the carrier, sufficient for smartphones. The 12-kHz to 20-MHz integrated jitter is 163.3fs, which yields an excellent jitter FoM of −251dB. The key to this demonstration is the use of $lambda$ couplers to affect a 0° phase shift across the array terminals; and electrodeless resonators to buffer the effect of post-fabrication stress that otherwise might short disks to their electrodes when gaps are very small.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"1 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79809931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234823
D. Branch, K. Wessendorf
A true series resonance oscillator has been developed for use with a wide-range of 1-port resonance-based sensors and devices. The oscillator effectively removes the shunt capacitance Co, allowing the true series resonance to be monitored, providing the optimum sensitivity across a wide range of frequencies (i.e. kilohertz to gigahertz), shunt capacitances, and quality factors (Q) for the first time. It is well-known that non-zero shunt capacitance alters the impedance by shifting the location of the impedance minimum and the zero-phase crossing while causing significant impedance distortion. We have developed an active shunt capacitance cancelling oscillator (ASSCO) that removes any shunt capacitance across the resonator by supplying the circuit an equal “dummy” capacitance using a cancelling current. The oscillator does not require automatic gain control (AGC) and the resonator can be grounded to reduce parasitic contributions.
{"title":"True Series Resonance Oscillator using Active Shunt Capacitance Cancellation","authors":"D. Branch, K. Wessendorf","doi":"10.1109/IFCS-ISAF41089.2020.9234823","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234823","url":null,"abstract":"A true series resonance oscillator has been developed for use with a wide-range of 1-port resonance-based sensors and devices. The oscillator effectively removes the shunt capacitance Co, allowing the true series resonance to be monitored, providing the optimum sensitivity across a wide range of frequencies (i.e. kilohertz to gigahertz), shunt capacitances, and quality factors (Q) for the first time. It is well-known that non-zero shunt capacitance alters the impedance by shifting the location of the impedance minimum and the zero-phase crossing while causing significant impedance distortion. We have developed an active shunt capacitance cancelling oscillator (ASSCO) that removes any shunt capacitance across the resonator by supplying the circuit an equal “dummy” capacitance using a cancelling current. The oscillator does not require automatic gain control (AGC) and the resonator can be grounded to reduce parasitic contributions.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"115 25 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84215515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234832
He Wang, Teng Wu, Wei Xiao, Haidong Wang, Yucheng Yang, Xiang Peng, Hong Guo
We present theoretical study of the Hanle effect in the metastable state of 4He atoms with arbitrarily polarized light. The orientation and alignment components of the atomic polarization produce resonance signals with different line shapes. The amplitudes and line shapes of Hanle resonance signals have significant dependence on the light polarization. Our results can be used as an efficient method to determine the polarization component of the laser light, which is crucial for atomic physics experiments employing resonant light-atom interactions.
{"title":"Hanle Effect in the Metastable State of 4He Atoms with Arbitrarily Polarized Light","authors":"He Wang, Teng Wu, Wei Xiao, Haidong Wang, Yucheng Yang, Xiang Peng, Hong Guo","doi":"10.1109/IFCS-ISAF41089.2020.9234832","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234832","url":null,"abstract":"We present theoretical study of the Hanle effect in the metastable state of 4He atoms with arbitrarily polarized light. The orientation and alignment components of the atomic polarization produce resonance signals with different line shapes. The amplitudes and line shapes of Hanle resonance signals have significant dependence on the light polarization. Our results can be used as an efficient method to determine the polarization component of the laser light, which is crucial for atomic physics experiments employing resonant light-atom interactions.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"48 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78250892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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