2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)最新文献
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234945
Haosen Shang, Tongyun Zhang, Xiaolei Guan, D. Pan, Jingbiao Chen, Tiantian Shi, Jun Pan, Chunlai Li, G. Hu, Jin He
This paper provides a feasible method to narrow the linewidth of the laser by modulation transfer spectroscopy, benefiting from a high feedback bandwidth and the high signal-to-noise ratio of the spectroscopy. We experimentally stabilize the frequency of a 420 nm blue diode laser with a free-running Lorentz linewidth of 43 kHz on the quantum transition of 85Rb, and the heterodyne experiments based on two identical configurations showing that the linewidth of laser is efficiently narrowed by 6 times, namely a Lorentz linewidth of 7 kHz. With the feedback bandwidth and signal-to-noise ratio in-loop further enhanced, the scheme with a relatively simple construction can potentially achieve a sub-kHz laser linewidth.
{"title":"Narrowing Laser Linewidth Using Modulation Transfer Spectroscopy","authors":"Haosen Shang, Tongyun Zhang, Xiaolei Guan, D. Pan, Jingbiao Chen, Tiantian Shi, Jun Pan, Chunlai Li, G. Hu, Jin He","doi":"10.1109/IFCS-ISAF41089.2020.9234945","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234945","url":null,"abstract":"This paper provides a feasible method to narrow the linewidth of the laser by modulation transfer spectroscopy, benefiting from a high feedback bandwidth and the high signal-to-noise ratio of the spectroscopy. We experimentally stabilize the frequency of a 420 nm blue diode laser with a free-running Lorentz linewidth of 43 kHz on the quantum transition of 85Rb, and the heterodyne experiments based on two identical configurations showing that the linewidth of laser is efficiently narrowed by 6 times, namely a Lorentz linewidth of 7 kHz. With the feedback bandwidth and signal-to-noise ratio in-loop further enhanced, the scheme with a relatively simple construction can potentially achieve a sub-kHz laser linewidth.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"35 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79982962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234881
P. Bogdanov, A. Druzhin, T. Primakina
GPS, GLONASS, Galileo, BeiDou and other Global Navigation Satellite Systems provide high-accuracy positioning and timing to overland, marine, airborne and other kinds of users. For GNSS interoperability it is necessary to provide users with the values of the offsets between GNSS time scales. Thus, GNSS-GNSS Time offset monitoring is an essential issue. The paper analyzes the available methods of GNSS-GNSS Time offset independent monitoring “from outside” and the feasibility of using the data provided by Bureau International des Poids et Mesures BIPM on UTC/UTCr time scales for calculating GNSS-GNSS Time offsets. The results of GNSS-GNSS Time offset monitoring at Russian Institute of Radionavigation and Time are presented.
{"title":"On Using UTC/UTCr for GNSS-GNSS Time Offset Monitoring","authors":"P. Bogdanov, A. Druzhin, T. Primakina","doi":"10.1109/IFCS-ISAF41089.2020.9234881","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234881","url":null,"abstract":"GPS, GLONASS, Galileo, BeiDou and other Global Navigation Satellite Systems provide high-accuracy positioning and timing to overland, marine, airborne and other kinds of users. For GNSS interoperability it is necessary to provide users with the values of the offsets between GNSS time scales. Thus, GNSS-GNSS Time offset monitoring is an essential issue. The paper analyzes the available methods of GNSS-GNSS Time offset independent monitoring “from outside” and the feasibility of using the data provided by Bureau International des Poids et Mesures BIPM on UTC/UTCr time scales for calculating GNSS-GNSS Time offsets. The results of GNSS-GNSS Time offset monitoring at Russian Institute of Radionavigation and Time are presented.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"136 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77479631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234935
J. Cahill, T. Mahmood, Patrick G. Sykes, Weimin Zhou, M. Cich, R. Wilk, S. Mueller, F. Rohde, C. Menyuk
Due to the inherently low crosstalk between carrier-envelope and repetition rate control mechanisms, difference-frequency generated (DFG) optical frequency combs are an attractive light source for low-phase-noise microwave generation based on feedback control. However, the DFG process adds phase noise to individual comb lines in accordance with the carrier-envelope noise. Here, we stabilized a DFG comb with a 7.5 m interferometer and generated a 10 GHz signal with a phase noise of −123 dBc/Hz at 1 kHz offset frequency.
{"title":"Low-Phase Noise Microwave Generation using Self-Stabilized $f_{text{ceo}}$-Free Comb","authors":"J. Cahill, T. Mahmood, Patrick G. Sykes, Weimin Zhou, M. Cich, R. Wilk, S. Mueller, F. Rohde, C. Menyuk","doi":"10.1109/IFCS-ISAF41089.2020.9234935","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234935","url":null,"abstract":"Due to the inherently low crosstalk between carrier-envelope and repetition rate control mechanisms, difference-frequency generated (DFG) optical frequency combs are an attractive light source for low-phase-noise microwave generation based on feedback control. However, the DFG process adds phase noise to individual comb lines in accordance with the carrier-envelope noise. Here, we stabilized a DFG comb with a 7.5 m interferometer and generated a 10 GHz signal with a phase noise of −123 dBc/Hz at 1 kHz offset frequency.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"40 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88569622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234830
I. Fujii, S. Ueno, S. Wada
A <111>c-oriented (K0.5Na0.5)NbO3 single crystal was grown by a solid-state crystal growth method. A faster growth rate in the <111>c direction was observed than in the <100>c direction. The slope of the unipolar strain curve was 127 pm/V, which was larger than that of a <110>c-oriented crystal (77 pm/V) but smaller than that of a <100>c-oriented crystal (211 pm/V). These results are useful for the fabrications of compositionally more complicated (K,Na)NbO3-based single crystals with larger piezoelectric properties.
{"title":"Fabrication of <111>c-oriented (K0.5Na0.5)NbO3 Single Crystal by Solid-State Cyrstal Growth Method","authors":"I. Fujii, S. Ueno, S. Wada","doi":"10.1109/IFCS-ISAF41089.2020.9234830","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234830","url":null,"abstract":"A <111><inf>c</inf>-oriented (K<inf>0.5</inf>Na<inf>0.5</inf>)NbO<inf>3</inf> single crystal was grown by a solid-state crystal growth method. A faster growth rate in the <111><inf>c</inf> direction was observed than in the <100><inf>c</inf> direction. The slope of the unipolar strain curve was 127 pm/V, which was larger than that of a <110><inf>c</inf>-oriented crystal (77 pm/V) but smaller than that of a <100><inf>c</inf>-oriented crystal (211 pm/V). These results are useful for the fabrications of compositionally more complicated (K,Na)NbO<inf>3</inf>-based single crystals with larger piezoelectric properties.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"22 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90580873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234939
Yutong Liu, J. Kuo, B. Davaji, V. Gund, A. Lal, J. Sharma, Navab Singh
In this paper, the bulk-wave excitation and sense properties of solidly mounted AlScN and AlN bulk-wave transducers itegrated onto CMOS substrates is presented. The AlN is fabricated at Silterra Malaysia, and the Al0.85Sc0.15N transducer is fabricated at the Institute of Microelectronics (IME), both on top of Global Foundries (GF) 180nm CMOS wafers. The transducers are deposited on a $725mu m$ silicon substrate with the CMOS Back End of Line (BEOL) between the piezoelectric stack and the substrate silicon. In the continuous mode testing, the transducer is driven by a network analyzer to obtain the impedance response. We extracted the HBAR quality factor, electromechanical coupling, and the figure of merit from the impedance magnitude and phase. The composite quality factor of the AlN is found to be 17.4% higher than the AlScN, while the composite electromechanical coupling coefficient of the AlScN is 13% higher than the AlN. The larger electromechnaical coupling is useful for pulse response of the transducers used in ultrasonic imaging and sensing applications. In the pulsed mode testing, the transducer is driven by a 60 ns wide RF pulse packet with the carrier frequency swept from 700 MHz to 3 GHz, and the return is signal is used to calculate the transmit/receive transfer function. For the specific thin film stacks tested here, the voltage gain of the AlN and AlScN is comparable. The work also indicates the need for stack optimization to fully utilize the higher AlScN electromechanical coupling.
{"title":"Characterization of AlScN on CMOS","authors":"Yutong Liu, J. Kuo, B. Davaji, V. Gund, A. Lal, J. Sharma, Navab Singh","doi":"10.1109/IFCS-ISAF41089.2020.9234939","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234939","url":null,"abstract":"In this paper, the bulk-wave excitation and sense properties of solidly mounted AlScN and AlN bulk-wave transducers itegrated onto CMOS substrates is presented. The AlN is fabricated at Silterra Malaysia, and the Al0.85Sc0.15N transducer is fabricated at the Institute of Microelectronics (IME), both on top of Global Foundries (GF) 180nm CMOS wafers. The transducers are deposited on a $725mu m$ silicon substrate with the CMOS Back End of Line (BEOL) between the piezoelectric stack and the substrate silicon. In the continuous mode testing, the transducer is driven by a network analyzer to obtain the impedance response. We extracted the HBAR quality factor, electromechanical coupling, and the figure of merit from the impedance magnitude and phase. The composite quality factor of the AlN is found to be 17.4% higher than the AlScN, while the composite electromechanical coupling coefficient of the AlScN is 13% higher than the AlN. The larger electromechnaical coupling is useful for pulse response of the transducers used in ultrasonic imaging and sensing applications. In the pulsed mode testing, the transducer is driven by a 60 ns wide RF pulse packet with the carrier frequency swept from 700 MHz to 3 GHz, and the return is signal is used to calculate the transmit/receive transfer function. For the specific thin film stacks tested here, the voltage gain of the AlN and AlScN is comparable. The work also indicates the need for stack optimization to fully utilize the higher AlScN electromechanical coupling.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"07 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86014434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234914
H. Kishi, T. Tsurumi, Takayuki Gotoh, K. Morita, Y. Iwazaki
We investigated the effect of AC and Uni-Polar polarization on piezoelectric properties of multilayer ceramics using three types of Ferroelectric materials, such as BT, LNKN and PZT based systems. We found LNKN and PZT systems showed both AC and Uni-Poling effect that showed high d31* value comparable to DC polarization. Especially, PZT systems showed AC and Uni-Polling effect in the wide frequency range, even at a high frequency of 20 kHz, which indicates that it can be polarized in an extremely short time of 0.1 ms. The mechanisms of polarization in these materials will be discussed.
{"title":"Study on Polarization Behavior of Multilayer Ceramics Using Various Ferroelectric Materials","authors":"H. Kishi, T. Tsurumi, Takayuki Gotoh, K. Morita, Y. Iwazaki","doi":"10.1109/IFCS-ISAF41089.2020.9234914","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234914","url":null,"abstract":"We investigated the effect of AC and Uni-Polar polarization on piezoelectric properties of multilayer ceramics using three types of Ferroelectric materials, such as BT, LNKN and PZT based systems. We found LNKN and PZT systems showed both AC and Uni-Poling effect that showed high d31* value comparable to DC polarization. Especially, PZT systems showed AC and Uni-Polling effect in the wide frequency range, even at a high frequency of 20 kHz, which indicates that it can be polarized in an extremely short time of 0.1 ms. The mechanisms of polarization in these materials will be discussed.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"61 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88800222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234879
D. Lehninger, T. Ali, R. Olivo, M. Lederer, T. Kämpfe, K. Mertens, K. Seidel
The discovery of ferroelectricity in thin films of doped hafnium oxide has led to a renaissance of ferroelectric (FE) memory concepts. Compared to all inspected dopants, zirconium doped hafnium oxide (HZO) crystallizes at the lowest temperatures. Thus, this material system is ideal for the implementation of FE functionalities into the back-end-of-line (BEoL). So far, the FE phase is achieved by rapid thermal annealing (RTA) of prior amorphous HZO films. Recently, it was shown that a sole furnace anneal at 400°C is sufficient to functionalize the films. Herein, a wide range of annealing conditions are compared in order to further reduce the thermal budget and the number of process steps. It is found that furnace-annealing at 300°C for 1 h crystallizes the HZO films in the FE phase. With respect to crystallinity, these films show no significant degradation compared to films annealed at 400°C. Nevertheless, the remanent polarization reduces slightly with temperature, but is still sufficient even at 300°C.
{"title":"Furnace annealed HfO2-Films for the Integration of Ferroelectric Functionalities into the BEoL","authors":"D. Lehninger, T. Ali, R. Olivo, M. Lederer, T. Kämpfe, K. Mertens, K. Seidel","doi":"10.1109/IFCS-ISAF41089.2020.9234879","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234879","url":null,"abstract":"The discovery of ferroelectricity in thin films of doped hafnium oxide has led to a renaissance of ferroelectric (FE) memory concepts. Compared to all inspected dopants, zirconium doped hafnium oxide (HZO) crystallizes at the lowest temperatures. Thus, this material system is ideal for the implementation of FE functionalities into the back-end-of-line (BEoL). So far, the FE phase is achieved by rapid thermal annealing (RTA) of prior amorphous HZO films. Recently, it was shown that a sole furnace anneal at 400°C is sufficient to functionalize the films. Herein, a wide range of annealing conditions are compared in order to further reduce the thermal budget and the number of process steps. It is found that furnace-annealing at 300°C for 1 h crystallizes the HZO films in the FE phase. With respect to crystallinity, these films show no significant degradation compared to films annealed at 400°C. Nevertheless, the remanent polarization reduces slightly with temperature, but is still sufficient even at 300°C.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"52 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90928160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234825
Tiantian Shi, Jianxiang Miao, D. Pan, Jingbiao Chen
In this work, we present the optimization of pumping light for Cs four-level active optical clock in detail. The relationships between the power stability of 1470 nm clock-transition laser and the power stability, as well as frequency stability, of 459 nm pumping laser are demonstrated, respectively. Through building an external cavity diode laser with power stability of $1times 10^{-4}@ 1 mathrm{s}$, the linewidth broadening of 1470 nm laser caused by power fluctuation of pumping laser is reduced to 43 Hz. Moreover, utilizing modulation transfer spectroscopy technique, the frequency stability of pumping laser is optimized by two orders of magnitude. Ultimately, the linewidth of 1470 nm active optical frequency standard is reduced to 120 Hz.
{"title":"Optimization of Pumping Light for Cs Four-level Active Optical clock","authors":"Tiantian Shi, Jianxiang Miao, D. Pan, Jingbiao Chen","doi":"10.1109/IFCS-ISAF41089.2020.9234825","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234825","url":null,"abstract":"In this work, we present the optimization of pumping light for Cs four-level active optical clock in detail. The relationships between the power stability of 1470 nm clock-transition laser and the power stability, as well as frequency stability, of 459 nm pumping laser are demonstrated, respectively. Through building an external cavity diode laser with power stability of $1times 10^{-4}@ 1 mathrm{s}$, the linewidth broadening of 1470 nm laser caused by power fluctuation of pumping laser is reduced to 43 Hz. Moreover, utilizing modulation transfer spectroscopy technique, the frequency stability of pumping laser is optimized by two orders of magnitude. Ultimately, the linewidth of 1470 nm active optical frequency standard is reduced to 120 Hz.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"13 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90996433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234940
Haosen Shang, D. Pan, Xiaopeng Xie, Tiantian Shi, Jingbiao Chen
In this paper, we propose a chip-scale cesium four-level active optical clock based on a microfabricated atomic vapor cell. This millimeter-scale vapor cell is coated on both ends of the wall, and the coated walls directly construct the optical resonator. The microfabricated atomic vapor cell is also used to stabilize the frequency of the pump laser, to further reduce the influence of light shift caused by the frequency-stabilized pump laser on the linewidth of active optical frequency standard signal. We make a theoretical analysis and design an experimental scheme. The chip-scale active optical clock with small size and high performance has wide application in precision measurement and detection, and other fields, and it will aid to promote the definition of time unit second based on the optical clock.
{"title":"Chip-scale Active Optical Clock Scheme","authors":"Haosen Shang, D. Pan, Xiaopeng Xie, Tiantian Shi, Jingbiao Chen","doi":"10.1109/IFCS-ISAF41089.2020.9234940","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234940","url":null,"abstract":"In this paper, we propose a chip-scale cesium four-level active optical clock based on a microfabricated atomic vapor cell. This millimeter-scale vapor cell is coated on both ends of the wall, and the coated walls directly construct the optical resonator. The microfabricated atomic vapor cell is also used to stabilize the frequency of the pump laser, to further reduce the influence of light shift caused by the frequency-stabilized pump laser on the linewidth of active optical frequency standard signal. We make a theoretical analysis and design an experimental scheme. The chip-scale active optical clock with small size and high performance has wide application in precision measurement and detection, and other fields, and it will aid to promote the definition of time unit second based on the optical clock.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"10 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89705866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234834
Ernest Ting-Ta Yen, Benyong Zhang, D. Griffith, Keegan Martin, M. Chowdhury, J. Segovia-Fernandez, Trevor Tarsi, B. Goodlin, B. Cook, R. Jackson
This paper introduces TI's mirror-encapsulated bulk acoustic wave (BAW) resonator technology and two novel system applications. Similar to other BAW resonators, the dual-Bragg acoustic resonator (DBAR) utilizes piezoelectric aluminum nitride (AIN) thin film between two metal electrodes. However, the DBAR operation requires no cavity on either side of the resonant body. This unique micro-acoustic resonator technology enables cost-effective system integration in mass production. The first system application is a novel network synchronizer based on an integrated ultra-low noise voltage-controlled BAW oscillator (VCBO). When operating as a jitter cleaner, the synthesized output clock rms jitter can be reduced to less than 60 fs (12 kHz–20 MHz). The second application uses this 2.5 GHz DBAR-oscillator as a high-frequency reference clock, achieving a ±30 ppm Bluetooth Low Energy (BLE) compliant crystal-less radio.
{"title":"High-frequency Reference System Implementations Utilizing Mirror-encapsulated BAW Resonators","authors":"Ernest Ting-Ta Yen, Benyong Zhang, D. Griffith, Keegan Martin, M. Chowdhury, J. Segovia-Fernandez, Trevor Tarsi, B. Goodlin, B. Cook, R. Jackson","doi":"10.1109/IFCS-ISAF41089.2020.9234834","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234834","url":null,"abstract":"This paper introduces TI's mirror-encapsulated bulk acoustic wave (BAW) resonator technology and two novel system applications. Similar to other BAW resonators, the dual-Bragg acoustic resonator (DBAR) utilizes piezoelectric aluminum nitride (AIN) thin film between two metal electrodes. However, the DBAR operation requires no cavity on either side of the resonant body. This unique micro-acoustic resonator technology enables cost-effective system integration in mass production. The first system application is a novel network synchronizer based on an integrated ultra-low noise voltage-controlled BAW oscillator (VCBO). When operating as a jitter cleaner, the synthesized output clock rms jitter can be reduced to less than 60 fs (12 kHz–20 MHz). The second application uses this 2.5 GHz DBAR-oscillator as a high-frequency reference clock, achieving a ±30 ppm Bluetooth Low Energy (BLE) compliant crystal-less radio.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"8 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87486341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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