2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)最新文献
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234945
Haosen Shang, Tongyun Zhang, Xiaolei Guan, D. Pan, Jingbiao Chen, Tiantian Shi, Jun Pan, Chunlai Li, G. Hu, Jin He
This paper provides a feasible method to narrow the linewidth of the laser by modulation transfer spectroscopy, benefiting from a high feedback bandwidth and the high signal-to-noise ratio of the spectroscopy. We experimentally stabilize the frequency of a 420 nm blue diode laser with a free-running Lorentz linewidth of 43 kHz on the quantum transition of 85Rb, and the heterodyne experiments based on two identical configurations showing that the linewidth of laser is efficiently narrowed by 6 times, namely a Lorentz linewidth of 7 kHz. With the feedback bandwidth and signal-to-noise ratio in-loop further enhanced, the scheme with a relatively simple construction can potentially achieve a sub-kHz laser linewidth.
{"title":"Narrowing Laser Linewidth Using Modulation Transfer Spectroscopy","authors":"Haosen Shang, Tongyun Zhang, Xiaolei Guan, D. Pan, Jingbiao Chen, Tiantian Shi, Jun Pan, Chunlai Li, G. Hu, Jin He","doi":"10.1109/IFCS-ISAF41089.2020.9234945","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234945","url":null,"abstract":"This paper provides a feasible method to narrow the linewidth of the laser by modulation transfer spectroscopy, benefiting from a high feedback bandwidth and the high signal-to-noise ratio of the spectroscopy. We experimentally stabilize the frequency of a 420 nm blue diode laser with a free-running Lorentz linewidth of 43 kHz on the quantum transition of 85Rb, and the heterodyne experiments based on two identical configurations showing that the linewidth of laser is efficiently narrowed by 6 times, namely a Lorentz linewidth of 7 kHz. With the feedback bandwidth and signal-to-noise ratio in-loop further enhanced, the scheme with a relatively simple construction can potentially achieve a sub-kHz laser linewidth.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"35 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79982962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234881
P. Bogdanov, A. Druzhin, T. Primakina
GPS, GLONASS, Galileo, BeiDou and other Global Navigation Satellite Systems provide high-accuracy positioning and timing to overland, marine, airborne and other kinds of users. For GNSS interoperability it is necessary to provide users with the values of the offsets between GNSS time scales. Thus, GNSS-GNSS Time offset monitoring is an essential issue. The paper analyzes the available methods of GNSS-GNSS Time offset independent monitoring “from outside” and the feasibility of using the data provided by Bureau International des Poids et Mesures BIPM on UTC/UTCr time scales for calculating GNSS-GNSS Time offsets. The results of GNSS-GNSS Time offset monitoring at Russian Institute of Radionavigation and Time are presented.
{"title":"On Using UTC/UTCr for GNSS-GNSS Time Offset Monitoring","authors":"P. Bogdanov, A. Druzhin, T. Primakina","doi":"10.1109/IFCS-ISAF41089.2020.9234881","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234881","url":null,"abstract":"GPS, GLONASS, Galileo, BeiDou and other Global Navigation Satellite Systems provide high-accuracy positioning and timing to overland, marine, airborne and other kinds of users. For GNSS interoperability it is necessary to provide users with the values of the offsets between GNSS time scales. Thus, GNSS-GNSS Time offset monitoring is an essential issue. The paper analyzes the available methods of GNSS-GNSS Time offset independent monitoring “from outside” and the feasibility of using the data provided by Bureau International des Poids et Mesures BIPM on UTC/UTCr time scales for calculating GNSS-GNSS Time offsets. The results of GNSS-GNSS Time offset monitoring at Russian Institute of Radionavigation and Time are presented.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"136 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77479631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234935
J. Cahill, T. Mahmood, Patrick G. Sykes, Weimin Zhou, M. Cich, R. Wilk, S. Mueller, F. Rohde, C. Menyuk
Due to the inherently low crosstalk between carrier-envelope and repetition rate control mechanisms, difference-frequency generated (DFG) optical frequency combs are an attractive light source for low-phase-noise microwave generation based on feedback control. However, the DFG process adds phase noise to individual comb lines in accordance with the carrier-envelope noise. Here, we stabilized a DFG comb with a 7.5 m interferometer and generated a 10 GHz signal with a phase noise of −123 dBc/Hz at 1 kHz offset frequency.
{"title":"Low-Phase Noise Microwave Generation using Self-Stabilized $f_{text{ceo}}$-Free Comb","authors":"J. Cahill, T. Mahmood, Patrick G. Sykes, Weimin Zhou, M. Cich, R. Wilk, S. Mueller, F. Rohde, C. Menyuk","doi":"10.1109/IFCS-ISAF41089.2020.9234935","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234935","url":null,"abstract":"Due to the inherently low crosstalk between carrier-envelope and repetition rate control mechanisms, difference-frequency generated (DFG) optical frequency combs are an attractive light source for low-phase-noise microwave generation based on feedback control. However, the DFG process adds phase noise to individual comb lines in accordance with the carrier-envelope noise. Here, we stabilized a DFG comb with a 7.5 m interferometer and generated a 10 GHz signal with a phase noise of −123 dBc/Hz at 1 kHz offset frequency.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"40 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88569622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234830
I. Fujii, S. Ueno, S. Wada
A <111>c-oriented (K0.5Na0.5)NbO3 single crystal was grown by a solid-state crystal growth method. A faster growth rate in the <111>c direction was observed than in the <100>c direction. The slope of the unipolar strain curve was 127 pm/V, which was larger than that of a <110>c-oriented crystal (77 pm/V) but smaller than that of a <100>c-oriented crystal (211 pm/V). These results are useful for the fabrications of compositionally more complicated (K,Na)NbO3-based single crystals with larger piezoelectric properties.
{"title":"Fabrication of <111>c-oriented (K0.5Na0.5)NbO3 Single Crystal by Solid-State Cyrstal Growth Method","authors":"I. Fujii, S. Ueno, S. Wada","doi":"10.1109/IFCS-ISAF41089.2020.9234830","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234830","url":null,"abstract":"A <111><inf>c</inf>-oriented (K<inf>0.5</inf>Na<inf>0.5</inf>)NbO<inf>3</inf> single crystal was grown by a solid-state crystal growth method. A faster growth rate in the <111><inf>c</inf> direction was observed than in the <100><inf>c</inf> direction. The slope of the unipolar strain curve was 127 pm/V, which was larger than that of a <110><inf>c</inf>-oriented crystal (77 pm/V) but smaller than that of a <100><inf>c</inf>-oriented crystal (211 pm/V). These results are useful for the fabrications of compositionally more complicated (K,Na)NbO<inf>3</inf>-based single crystals with larger piezoelectric properties.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"22 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90580873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234939
Yutong Liu, J. Kuo, B. Davaji, V. Gund, A. Lal, J. Sharma, Navab Singh
In this paper, the bulk-wave excitation and sense properties of solidly mounted AlScN and AlN bulk-wave transducers itegrated onto CMOS substrates is presented. The AlN is fabricated at Silterra Malaysia, and the Al0.85Sc0.15N transducer is fabricated at the Institute of Microelectronics (IME), both on top of Global Foundries (GF) 180nm CMOS wafers. The transducers are deposited on a $725mu m$ silicon substrate with the CMOS Back End of Line (BEOL) between the piezoelectric stack and the substrate silicon. In the continuous mode testing, the transducer is driven by a network analyzer to obtain the impedance response. We extracted the HBAR quality factor, electromechanical coupling, and the figure of merit from the impedance magnitude and phase. The composite quality factor of the AlN is found to be 17.4% higher than the AlScN, while the composite electromechanical coupling coefficient of the AlScN is 13% higher than the AlN. The larger electromechnaical coupling is useful for pulse response of the transducers used in ultrasonic imaging and sensing applications. In the pulsed mode testing, the transducer is driven by a 60 ns wide RF pulse packet with the carrier frequency swept from 700 MHz to 3 GHz, and the return is signal is used to calculate the transmit/receive transfer function. For the specific thin film stacks tested here, the voltage gain of the AlN and AlScN is comparable. The work also indicates the need for stack optimization to fully utilize the higher AlScN electromechanical coupling.
{"title":"Characterization of AlScN on CMOS","authors":"Yutong Liu, J. Kuo, B. Davaji, V. Gund, A. Lal, J. Sharma, Navab Singh","doi":"10.1109/IFCS-ISAF41089.2020.9234939","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234939","url":null,"abstract":"In this paper, the bulk-wave excitation and sense properties of solidly mounted AlScN and AlN bulk-wave transducers itegrated onto CMOS substrates is presented. The AlN is fabricated at Silterra Malaysia, and the Al0.85Sc0.15N transducer is fabricated at the Institute of Microelectronics (IME), both on top of Global Foundries (GF) 180nm CMOS wafers. The transducers are deposited on a $725mu m$ silicon substrate with the CMOS Back End of Line (BEOL) between the piezoelectric stack and the substrate silicon. In the continuous mode testing, the transducer is driven by a network analyzer to obtain the impedance response. We extracted the HBAR quality factor, electromechanical coupling, and the figure of merit from the impedance magnitude and phase. The composite quality factor of the AlN is found to be 17.4% higher than the AlScN, while the composite electromechanical coupling coefficient of the AlScN is 13% higher than the AlN. The larger electromechnaical coupling is useful for pulse response of the transducers used in ultrasonic imaging and sensing applications. In the pulsed mode testing, the transducer is driven by a 60 ns wide RF pulse packet with the carrier frequency swept from 700 MHz to 3 GHz, and the return is signal is used to calculate the transmit/receive transfer function. For the specific thin film stacks tested here, the voltage gain of the AlN and AlScN is comparable. The work also indicates the need for stack optimization to fully utilize the higher AlScN electromechanical coupling.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"07 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86014434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234885
A. Mahmoud, T. Mukherjee, G. Piazza
This paper is the first to investigate the quality factor (Q) in surface acoustic wave (SAW) resonators for SAW gyroscopes (SAWG) applications. This constitutes the first analytical and experimental evaluation of SAW loss mechanisms for orthogonal crystal symmetric Y-cut ±45° direction relative to Z-axis on both Lithium Niobate (LN) and Lithium Niobate on Insulator substrate (LNOI). This study demonstrates the ability to minimize the radiation, diffraction, beam steering and bulk scattering loss while exciting the SAW resonators with extremely thick tungsten electrodes (> 2% of acoustic wavelength), which are required to maximize the SAWG sensitivity. This investigation results in SAW devices exhibiting $Q_{total}$ approaching 15,000 and more than 14 × higher than conventional designs. This approach is the first step towards understanding and eliminating the sources of losses in SAWG, enabling the development of a new generation of high-performance MEMS SAW-based gyroscopes with high sensitivity and stability.
{"title":"A Study of Quality Factor in SAW Resonators for SAW Gyroscope Applications","authors":"A. Mahmoud, T. Mukherjee, G. Piazza","doi":"10.1109/IFCS-ISAF41089.2020.9234885","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234885","url":null,"abstract":"This paper is the first to investigate the quality factor (Q) in surface acoustic wave (SAW) resonators for SAW gyroscopes (SAWG) applications. This constitutes the first analytical and experimental evaluation of SAW loss mechanisms for orthogonal crystal symmetric Y-cut ±45° direction relative to Z-axis on both Lithium Niobate (LN) and Lithium Niobate on Insulator substrate (LNOI). This study demonstrates the ability to minimize the radiation, diffraction, beam steering and bulk scattering loss while exciting the SAW resonators with extremely thick tungsten electrodes (> 2% of acoustic wavelength), which are required to maximize the SAWG sensitivity. This investigation results in SAW devices exhibiting $Q_{total}$ approaching 15,000 and more than 14 × higher than conventional designs. This approach is the first step towards understanding and eliminating the sources of losses in SAWG, enabling the development of a new generation of high-performance MEMS SAW-based gyroscopes with high sensitivity and stability.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"32 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78100783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234858
R. Ciocan
A software based instrumentation system was designed to measure the transient frequency response for a 50 MHz signal with a precision better than 0.3 ppm. Long short-term memory (LSTM), an artificial recurrent neural network (RNN) architecture was used to detect and classify features on signals generated by this system. Dropouts in signal were detected and characterized with an accuracy better than 78%. The concept of software based instrumentation was implemented using a PXI based instrumentation system. The software solution was implemented in LabVIEW, Matlab and LabWindows/CVI.
{"title":"Use of Artificial Intelligence in Classification and Monitoring of VHF Signals in a Software Based Instrumentation System","authors":"R. Ciocan","doi":"10.1109/IFCS-ISAF41089.2020.9234858","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234858","url":null,"abstract":"A software based instrumentation system was designed to measure the transient frequency response for a 50 MHz signal with a precision better than 0.3 ppm. Long short-term memory (LSTM), an artificial recurrent neural network (RNN) architecture was used to detect and classify features on signals generated by this system. Dropouts in signal were detected and characterized with an accuracy better than 78%. The concept of software based instrumentation was implemented using a PXI based instrumentation system. The software solution was implemented in LabVIEW, Matlab and LabWindows/CVI.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"30 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77053104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234909
Bryan Hemingway, T. G. Akin, Jennifer A. Taylor, Steven Eric Peil
We assess the limits to long-term frequency stability of a thermal calcium-beam optical clock from a variety of experimental parameters by measuring the change in clock frequency with changes in that parameter's value. Required regulation of the parameters to keep the contributed instability at the 10−17 level are extracted from these measurements and the implications discussed.
{"title":"Stability Budget for Thermal Calcium-Beam Optical Clock","authors":"Bryan Hemingway, T. G. Akin, Jennifer A. Taylor, Steven Eric Peil","doi":"10.1109/IFCS-ISAF41089.2020.9234909","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234909","url":null,"abstract":"We assess the limits to long-term frequency stability of a thermal calcium-beam optical clock from a variety of experimental parameters by measuring the change in clock frequency with changes in that parameter's value. Required regulation of the parameters to keep the contributed instability at the 10−17 level are extracted from these measurements and the implications discussed.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"57 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79078480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234860
Tzu-Hsuan Hsu, Ming-Huang Li, A. Zope, Sheng-Shian Li
In this work, a sub-mW/pixel monolithic zero-bias CMOS-MEMS capacitive micromachined ultrasound transducer (CMUT) receiver front-end is demonstrated based on a titanium nitride composite (TiN-C) structure for low-voltage applications. The fabricated CMUT device exhibits a center frequency of 3 MHz immersed in water while having an operation bandwidth of roughly 90%. The front-end low noise amplifier of each CMUT pixel ($180times 550 mu mathrm{m}^{2}$) features gain of 25 dB and bandwidth of 14 MHz while only consuming 0.965 mW from a 2.5V supply, showing a great potential for high speed and low power imaging applications. The sensitivity of the proposed CMUT front-end was characterized with 0.4 mV/kPa and 1.4 mV/kPa with DC-bias of 0V (i.e., zero-bias) and 2V, respectively, which is benefitted from the efficient electrostatic transduction offered by TiN-C MEMS platform (transducer gap size < 400 nm) in $0.35 mu mathrm{m}$ CMOS.
在这项工作中，基于氮化钛复合材料(TiN-C)结构，展示了一种用于低压应用的亚毫瓦/像素单片零偏CMOS-MEMS电容式微机械超声换能器(CMUT)接收器前端。所制备的CMUT器件浸入水中的中心频率为3mhz，而工作带宽约为90%。每个CMUT像素的前端低噪声放大器($180times 550 mu maththrm {m}^{2}$)具有25 dB增益和14 MHz带宽，而在2.5V电源下仅消耗0.965 mW，显示出高速低功耗成像应用的巨大潜力。CMUT前端的灵敏度分别为0.4 mV/kPa和1.4 mV/kPa，直流偏置分别为0V(即零偏置)和2V，这得益于TiN-C MEMS平台(传感器间隙尺寸< 400 nm)在$0.35 mu maththrm {m}$ CMOS中提供的高效静电转导。
{"title":"A Sub-mW/Pixel Zero-Bias CMUT-in-CMOS Receiver Front-End with TiN Electrode","authors":"Tzu-Hsuan Hsu, Ming-Huang Li, A. Zope, Sheng-Shian Li","doi":"10.1109/IFCS-ISAF41089.2020.9234860","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234860","url":null,"abstract":"In this work, a sub-mW/pixel monolithic zero-bias CMOS-MEMS capacitive micromachined ultrasound transducer (CMUT) receiver front-end is demonstrated based on a titanium nitride composite (TiN-C) structure for low-voltage applications. The fabricated CMUT device exhibits a center frequency of 3 MHz immersed in water while having an operation bandwidth of roughly 90%. The front-end low noise amplifier of each CMUT pixel ($180times 550 mu mathrm{m}^{2}$) features gain of 25 dB and bandwidth of 14 MHz while only consuming 0.965 mW from a 2.5V supply, showing a great potential for high speed and low power imaging applications. The sensitivity of the proposed CMUT front-end was characterized with 0.4 mV/kPa and 1.4 mV/kPa with DC-bias of 0V (i.e., zero-bias) and 2V, respectively, which is benefitted from the efficient electrostatic transduction offered by TiN-C MEMS platform (transducer gap size < 400 nm) in $0.35 mu mathrm{m}$ CMOS.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"35 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79658638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234831
Jialin Wang, Mingyo Park, S. Mertin, T. Pensala, F. Ayazi, A. Ansari
This work demonstrates the hysteresis behavior and temperature characterization of an AlScN Film bulk acoustic resonator (FBAR) with ∼30% $text{Sc}/(text{Al}+text{Sc})$ ratio. Operating at ∼3 GHz, the as-fabricated FBAR exhibits a record high effective electromechanical coupling ($k_{t}{}^{2}$) of 18% with a mechanical quality factor ($Q_{m}$) of 328. The polarization of the FBAR can be switched from N-polar to Al-polar by using a triangular-wave signal with a peak voltage of −350 V, applied for 6 seconds at 1 kHz across a 900 nm-thick Al0.7Sc0.3N film. It is shown that the polarization switching of AlScN film not only changes the polarity of the piezoelectric coefficient (e33), but also changes the series resistance of the metal-ferroelectric-metal (MFM) stack and leads to an effective “switching” of the FBAR. The frequency response of the switchable FBAR is investigated after polarization switching during 4 cycles and at elevated temperatures up to 600 K.
{"title":"A High-$k_{t}{}^{2}$ Switchable Ferroelectric Al0.7Sc0.3N Film Bulk Acoustic Resonator","authors":"Jialin Wang, Mingyo Park, S. Mertin, T. Pensala, F. Ayazi, A. Ansari","doi":"10.1109/IFCS-ISAF41089.2020.9234831","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234831","url":null,"abstract":"This work demonstrates the hysteresis behavior and temperature characterization of an AlScN Film bulk acoustic resonator (FBAR) with ∼30% $text{Sc}/(text{Al}+text{Sc})$ ratio. Operating at ∼3 GHz, the as-fabricated FBAR exhibits a record high effective electromechanical coupling ($k_{t}{}^{2}$) of 18% with a mechanical quality factor ($Q_{m}$) of 328. The polarization of the FBAR can be switched from N-polar to Al-polar by using a triangular-wave signal with a peak voltage of −350 V, applied for 6 seconds at 1 kHz across a 900 nm-thick Al0.7Sc0.3N film. It is shown that the polarization switching of AlScN film not only changes the polarity of the piezoelectric coefficient (e33), but also changes the series resistance of the metal-ferroelectric-metal (MFM) stack and leads to an effective “switching” of the FBAR. The frequency response of the switchable FBAR is investigated after polarization switching during 4 cycles and at elevated temperatures up to 600 K.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"38 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80010598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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