2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)最新文献
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234840
C. Rieck, S. Gewies, Lars Grundhöfer, M. Hoppe
R-Mode is an alternative maritime PNT technology currently under development. It is based on synchronous transmissions and multilateration. Base station synchronization errors are recognized as the major error source. Introduction to R-Mode using maritime radio beacons, timing requirements, and the concept of R-Mode in-band synchronization are briefly presented.
{"title":"Synchronization of R-Mode Base Stations","authors":"C. Rieck, S. Gewies, Lars Grundhöfer, M. Hoppe","doi":"10.1109/IFCS-ISAF41089.2020.9234840","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234840","url":null,"abstract":"R-Mode is an alternative maritime PNT technology currently under development. It is based on synchronous transmissions and multilateration. Base station synchronization errors are recognized as the major error source. Introduction to R-Mode using maritime radio beacons, timing requirements, and the concept of R-Mode in-band synchronization are briefly presented.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"35 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83510304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234902
Yucheng Yang, Jingbiao Chen, Xiang Peng, Teng Wu, Hong Guo
In this article, we present a novel method to measure the residual magnetic field in the magnetic shield. Because of the nonlinear Zeeman effect, the magnetic resonance width will grow with the increasing magnetic field. By detecting the dependence of the magnetic resonance signal width on the applied magnetic field, the residual magnetic field in the magnetic shield can be deduced. The error of the deduced value and the true value can be less than 1.5 nT. Higher sampling rate can result in less error.
{"title":"Measuring Residual Magnetic Field in the Magnetic Shield with Magnetic Resonance Signal Width","authors":"Yucheng Yang, Jingbiao Chen, Xiang Peng, Teng Wu, Hong Guo","doi":"10.1109/IFCS-ISAF41089.2020.9234902","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234902","url":null,"abstract":"In this article, we present a novel method to measure the residual magnetic field in the magnetic shield. Because of the nonlinear Zeeman effect, the magnetic resonance width will grow with the increasing magnetic field. By detecting the dependence of the magnetic resonance signal width on the applied magnetic field, the residual magnetic field in the magnetic shield can be deduced. The error of the deduced value and the true value can be less than 1.5 nT. Higher sampling rate can result in less error.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"30 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77334078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234883
S. Fichtner, F. Lofink, B. Wagner, Georg Schönweger, Tom-Niklas Kreutzer, A. Petraru, H. Kohlstedt
The discovery of ferroelectricity in AlScN allowed the first clear observation of the effect in the wurtzite crystal structure, resulting in a material with a previously unprecedented combination of very large coercive fields (2-5 MV/cm) and remnant polarizations $(70-110 mu mathrm{C}/text{cm}^{2})$. We obtained initial insight into the switching dynamics of AlScN, which suggests a domain wall motion limited process progressing from the electrode interfaces. Further, imprint was generally observed in AlScN films and can tentatively be traced to the alignment of charged defects with the internal and external polarization and field, respectively. Potentially crucial from the application point of view, ferroelectricity could be observed in films with thicknesses below 30 nm – as the coercive fields of AlScN were found to be largely independent of thickness between 600 nm and 27 nm.
AlScN中铁电性的发现使得人们首次清楚地观察到纤钛矿晶体结构中的效应，从而产生了一种前所未有的材料，具有非常大的矫顽力场(2-5 MV/cm)和残余极化$(70-110 mu mathm {C}/text{cm}^{2})$。我们初步了解了AlScN的开关动力学，这表明畴壁运动限制了从电极界面开始的过程。此外，在AlScN薄膜中普遍观察到印记，并且可以初步追溯到带电缺陷分别与内部和外部极化和场的排列。从应用的角度来看，铁电性可以在厚度低于30 nm的薄膜中观察到，因为AlScN的矫顽力场在很大程度上与600 nm至27 nm之间的厚度无关。
{"title":"Ferroelectricity in AlScN: Switching, Imprint and sub-150 nm Films","authors":"S. Fichtner, F. Lofink, B. Wagner, Georg Schönweger, Tom-Niklas Kreutzer, A. Petraru, H. Kohlstedt","doi":"10.1109/IFCS-ISAF41089.2020.9234883","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234883","url":null,"abstract":"The discovery of ferroelectricity in AlScN allowed the first clear observation of the effect in the wurtzite crystal structure, resulting in a material with a previously unprecedented combination of very large coercive fields (2-5 MV/cm) and remnant polarizations $(70-110 mu mathrm{C}/text{cm}^{2})$. We obtained initial insight into the switching dynamics of AlScN, which suggests a domain wall motion limited process progressing from the electrode interfaces. Further, imprint was generally observed in AlScN films and can tentatively be traced to the alignment of charged defects with the internal and external polarization and field, respectively. Potentially crucial from the application point of view, ferroelectricity could be observed in films with thicknesses below 30 nm – as the coercive fields of AlScN were found to be largely independent of thickness between 600 nm and 27 nm.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"6 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75014039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234928
Parvin Akhkandi, Sina Moradian, Hakhamanesh Mansoorzare, R. Abdolvand
This paper reports the first study of near-carrier phase noise (PN) dependency on the resonator volume/harmonic-number in thin-film piezoelectric-on-substrate (TPoS) MEMS oscillators. Two lateral bulk-acoustic TPoS resonators with different volumes (3rd and 5th harmonic orders) were designed to operate at the same ∼25.6 MHz and fabricated on a $25mumathrm{m}$ silicon on insulator (SOI) substrate. The devices chosen for this study have different volumes but exhibit identical Quality factor ($Q$) and insertion loss (IL). The measured PN of the oscillators built based on these two resonators are measured and it is observed that the one based on the 5th order resonator exhibits ∼6dB lower PN @1KHz frequency offset compared to the 3rd order device. Although our preliminary results are not conclusive enough, it is hypothesized that an inverse proportionality to the resonator volume/mass predicted by earlier models could also describe this observation.
{"title":"Effects of Resonator Volume on The Oscillator Near-Carrier Phase Noise","authors":"Parvin Akhkandi, Sina Moradian, Hakhamanesh Mansoorzare, R. Abdolvand","doi":"10.1109/IFCS-ISAF41089.2020.9234928","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234928","url":null,"abstract":"This paper reports the first study of near-carrier phase noise (PN) dependency on the resonator volume/harmonic-number in thin-film piezoelectric-on-substrate (TPoS) MEMS oscillators. Two lateral bulk-acoustic TPoS resonators with different volumes (3rd and 5th harmonic orders) were designed to operate at the same ∼25.6 MHz and fabricated on a $25mumathrm{m}$ silicon on insulator (SOI) substrate. The devices chosen for this study have different volumes but exhibit identical Quality factor ($Q$) and insertion loss (IL). The measured PN of the oscillators built based on these two resonators are measured and it is observed that the one based on the 5th order resonator exhibits ∼6dB lower PN @1KHz frequency offset compared to the 3rd order device. Although our preliminary results are not conclusive enough, it is hypothesized that an inverse proportionality to the resonator volume/mass predicted by earlier models could also describe this observation.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"29 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75164057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234942
T. Kämpfe, T. Vogel, R. Olivo, M. Lederer, N. Kaiser, S. Petzold, T. Ali, D. Lehninger, C. Trautmann, L. Alff, K. Seidel
The novel thin-film ferroelectric material hafnium oxide has revived the interest into ferroelectric memory concepts, which is due to the fact, that it facilitates CMOS and BEoL compatible integration. A major requirement hereby is the stability of the ferroelectric layer towards ionizing radiation, such as gamma and heavy ion exposure. In this study, we investigate for the first time the influence of heavy ion irradiation on the crystallographic and ferroelectric properties of hafnium oxide based thin films. We show, that up to fluences of 1010 ions/cm2 of Au26+ ions with an energy of 1.635 GeV both the crystallographic and ferroelectric properties of Si:HfO2 (HSO) and Hf0.5Zr0.5O2 (HZO) keep unchanged. For higher dosages, a soft affection can be observed, which is retrieved to be a result of irradiation supported phase transition. The results of this study will help to implement ferroelectric memories into aviation and space applications.
{"title":"Heavy Ion Irradiation Effects on Structural and Ferroelectric Properties of HfO2 Films","authors":"T. Kämpfe, T. Vogel, R. Olivo, M. Lederer, N. Kaiser, S. Petzold, T. Ali, D. Lehninger, C. Trautmann, L. Alff, K. Seidel","doi":"10.1109/IFCS-ISAF41089.2020.9234942","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234942","url":null,"abstract":"The novel thin-film ferroelectric material hafnium oxide has revived the interest into ferroelectric memory concepts, which is due to the fact, that it facilitates CMOS and BEoL compatible integration. A major requirement hereby is the stability of the ferroelectric layer towards ionizing radiation, such as gamma and heavy ion exposure. In this study, we investigate for the first time the influence of heavy ion irradiation on the crystallographic and ferroelectric properties of hafnium oxide based thin films. We show, that up to fluences of 1010 ions/cm2 of Au26+ ions with an energy of 1.635 GeV both the crystallographic and ferroelectric properties of Si:HfO2 (HSO) and Hf0.5Zr0.5O2 (HZO) keep unchanged. For higher dosages, a soft affection can be observed, which is retrieved to be a result of irradiation supported phase transition. The results of this study will help to implement ferroelectric memories into aviation and space applications.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"302 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76251985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234892
C. Mart, A. Viegas, S. Eßlinger, M. Czernohorsky, W. Weinreich, D. Mutschall, A. Kaiser, N. Neumann, T. Großmann, K. Hiller, L. Eng
Nanometer-thin ferroelectric hafnium oxide (HfO2) films enable manufacturing of integrated infrared sensors in a CMOS compatible process. By depositing the pyroelectric film on an area-enhanced substrate, we significantly improve the sensor element response by a factor of more than 12. Integration challenges of doped HfO2 in 3D structures are assessed, and the pyroelectric signal amplitude is compared for Si-doped material and the Hf0.5Zr0.5O2 mixed oxide.
{"title":"Pyroelectric CMOS Compatible Sensor Element Based on Hafnium Oxide Thin Films","authors":"C. Mart, A. Viegas, S. Eßlinger, M. Czernohorsky, W. Weinreich, D. Mutschall, A. Kaiser, N. Neumann, T. Großmann, K. Hiller, L. Eng","doi":"10.1109/IFCS-ISAF41089.2020.9234892","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234892","url":null,"abstract":"Nanometer-thin ferroelectric hafnium oxide (HfO<inf>2</inf>) films enable manufacturing of integrated infrared sensors in a CMOS compatible process. By depositing the pyroelectric film on an area-enhanced substrate, we significantly improve the sensor element response by a factor of more than 12. Integration challenges of doped HfO<inf>2</inf> in 3D structures are assessed, and the pyroelectric signal amplitude is compared for Si-doped material and the Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> mixed oxide.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"27 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85228395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234866
Yanbo He, D. Weinstein
This paper reports on a localized mechanical resonance induced by a novel phononic crystal (PnC) design demonstrated in a $1 mu mathrm{m}$ aluminum nitride (AlN) thin film. An asymmetric PnC with diagonal beam bridging discs in a square lattice generates an isolated mode inside the PnC bandgap defined by the flexural mode of the connecting beam. Here we investigate the properties of the PnC dispersion relations as a function of key design parameters, defining resonance cavities to excite the localized mode. PnC resonators with localized mode at 156 MHz are characterized as a function of central bar rotation angle ($theta$), number of actuation layers ($mathrm{N}_{act}$) and lateral periods (P). This analysis of electromechanical modes with designed flat dispersion relation is an important first step toward Density-Near-Zero (DNZ) metamaterials and resilient elastic wave manipulation on chip.
本文报道了一种新型声子晶体(PnC)在$1 mu mathrm{m}$氮化铝(AlN)薄膜上引起的局部机械共振。方形晶格中具有对角梁桥盘的非对称PnC在由连接梁的弯曲模态定义的PnC带隙内产生隔离模态。在这里，我们研究了PnC色散关系作为关键设计参数的函数的性质，定义了激发局域模式的谐振腔。具有156 MHz局域模式的PnC谐振器的特征是中心杆旋转角度($theta$)，驱动层数($mathrm{N}_{act}$)和横向周期(P)的函数。这种具有设计的平坦色散关系的机电模式分析是实现近零密度(DNZ)超材料和芯片上弹性弹性波操作的重要第一步。
{"title":"Localized Modes in Asymmetric Phononic Crystals","authors":"Yanbo He, D. Weinstein","doi":"10.1109/IFCS-ISAF41089.2020.9234866","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234866","url":null,"abstract":"This paper reports on a localized mechanical resonance induced by a novel phononic crystal (PnC) design demonstrated in a $1 mu mathrm{m}$ aluminum nitride (AlN) thin film. An asymmetric PnC with diagonal beam bridging discs in a square lattice generates an isolated mode inside the PnC bandgap defined by the flexural mode of the connecting beam. Here we investigate the properties of the PnC dispersion relations as a function of key design parameters, defining resonance cavities to excite the localized mode. PnC resonators with localized mode at 156 MHz are characterized as a function of central bar rotation angle ($theta$), number of actuation layers ($mathrm{N}_{act}$) and lateral periods (P). This analysis of electromechanical modes with designed flat dispersion relation is an important first step toward Density-Near-Zero (DNZ) metamaterials and resilient elastic wave manipulation on chip.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"9 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82096027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234944
M. S. Islam, S. Mandal, G. Xereas, V. Chodavarapu
The frequency stability of reference oscillators (ROs) is a key performance limiter for all applications that require a timing or frequency reference, including precision sensors, inertial navigation systems, and radio frequency (RF) transceivers. This work demonstrates a GPS-disciplined MEMS RO based on injection locking of a ∼10.00 MHz MEMS-referenced oscillator (breath-mode dual ring resonator and custom single-chip CMOS feedback amplifier) to a GPS-disciplined crystal oscillator. The RO has excellent intrinsic short-term stability due to the high quality factor of the resonator ($Qapprox 85,000$ at a polarization voltage of 19 V). Stability was further optimized by using the programmable phase shift provided by the amplifier, which revealed the existence of a well-defined maximum stability point (MSP). In addition, long-term frequency fluctuations of the unlocked RO were significantly reduced by using an oven and active temperature compensation loop.
{"title":"A Dual-Ring Breath-Mode MEMS-Based 10.00 MHz GPS-Disciplined Reference Oscillator","authors":"M. S. Islam, S. Mandal, G. Xereas, V. Chodavarapu","doi":"10.1109/IFCS-ISAF41089.2020.9234944","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234944","url":null,"abstract":"The frequency stability of reference oscillators (ROs) is a key performance limiter for all applications that require a timing or frequency reference, including precision sensors, inertial navigation systems, and radio frequency (RF) transceivers. This work demonstrates a GPS-disciplined MEMS RO based on injection locking of a ∼10.00 MHz MEMS-referenced oscillator (breath-mode dual ring resonator and custom single-chip CMOS feedback amplifier) to a GPS-disciplined crystal oscillator. The RO has excellent intrinsic short-term stability due to the high quality factor of the resonator ($Qapprox 85,000$ at a polarization voltage of 19 V). Stability was further optimized by using the programmable phase shift provided by the amplifier, which revealed the existence of a well-defined maximum stability point (MSP). In addition, long-term frequency fluctuations of the unlocked RO were significantly reduced by using an oven and active temperature compensation loop.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"41 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80688507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234897
M. Hoffmann, Mengcheng Gui, S. Slesazeck, T. Mikolajick
The concept of a free energy landscape is vital in describing the physics of ferroelectrics. New experimental methods allow the extraction of such energy landscapes directly from pulsed electrical measurements. This enables the identification of regions of negative energy curvature as a negative capacitance state in the ferroelectric. Here we show, that ferroelectric Hf0.5Zr0.5O2films with thin dielectric interface layers exhibit two separate regions of negative capacitance in accordance with Landau theory, which provides new insights into the physics of ferroelectrics.
{"title":"Experimental Ferroelectric Energy Landscapes: Insights into the Origin of Negative Capacitance","authors":"M. Hoffmann, Mengcheng Gui, S. Slesazeck, T. Mikolajick","doi":"10.1109/IFCS-ISAF41089.2020.9234897","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234897","url":null,"abstract":"The concept of a free energy landscape is vital in describing the physics of ferroelectrics. New experimental methods allow the extraction of such energy landscapes directly from pulsed electrical measurements. This enables the identification of regions of negative energy curvature as a negative capacitance state in the ferroelectric. Here we show, that ferroelectric Hf0.5Zr0.5O2films with thin dielectric interface layers exhibit two separate regions of negative capacitance in accordance with Landau theory, which provides new insights into the physics of ferroelectrics.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"85 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78726059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-07-01DOI: 10.1109/IFCS-ISAF41089.2020.9234864
B. Davaji, Mamdouh Abdelmajeed, A. Lal, T. Pennell, Vincent J Genova
A fabrication process for sputtered piezoelectric AlN lateral bimorph transducers is presented. This work focuses on challenges with the interdependencies of the sputtered AlN film texture and the process development, especially plasma etching. The AlN films with better rocking curve FWHM have higher etch rates, smoother surface, and higher etch selectivity to oxide. By controlling the surface roughness of the underlying oxide layer, between 6 to 1.7 nm, we reduced the FWHM of sputtered AlN from 3 to 1.2 degrees. We verified an independent control parameter on the AlN crystal quality without changing the sputtering parameters, and this is a potential pathway to control the AlN plasma etching process by regional adjusting the substrate surface.
{"title":"Sputtered AlN Lateral Bimorph: Process Integration Challenges and Opportunities","authors":"B. Davaji, Mamdouh Abdelmajeed, A. Lal, T. Pennell, Vincent J Genova","doi":"10.1109/IFCS-ISAF41089.2020.9234864","DOIUrl":"https://doi.org/10.1109/IFCS-ISAF41089.2020.9234864","url":null,"abstract":"A fabrication process for sputtered piezoelectric AlN lateral bimorph transducers is presented. This work focuses on challenges with the interdependencies of the sputtered AlN film texture and the process development, especially plasma etching. The AlN films with better rocking curve FWHM have higher etch rates, smoother surface, and higher etch selectivity to oxide. By controlling the surface roughness of the underlying oxide layer, between 6 to 1.7 nm, we reduced the FWHM of sputtered AlN from 3 to 1.2 degrees. We verified an independent control parameter on the AlN crystal quality without changing the sputtering parameters, and this is a potential pathway to control the AlN plasma etching process by regional adjusting the substrate surface.","PeriodicalId":6872,"journal":{"name":"2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)","volume":"6 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78747684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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