Vahid Najafy, Bijan Abbasi-Arand, Maryam Hesari-Shermeh
It is a significant challenge to accurately identify and differentiate sample materials in the gas phase, especially when they have closely similar refractive indices. A promising solution in the THz range is to use plasmonic spoof surface structures configured in an Otto arrangement. Here, this study proposes a multilevel meta-grating structure sensor that achieves a remarkable improvement over the conventional binary-grating structure model. The proposed setup has been meticulously designed to maximize reflectance within the sensor's reflectance spectrum. This has been achieved by precisely adjusting the air gap distance, effectively minimizing the impact of sample material density. An in-depth analysis of gas samples with this structure shows a considerable increase in sensitivity with a small refractive index change up to 11.4 (TH/RIU), and the results are validated by simulating the reflection spectrum using the semi-analytical rigorous coupled wave analysis method. Moreover, the eigenmode solver in the CST Studio software is used to generate dispersion curves. The newly proposed design is particularly suitable for effectively detecting different gases with closely spaced refractive indices, making the proposed structure very useful in high-precision sensors that discern small refractive index changes.
{"title":"Terahertz Spoof Surface Plasmon Polariton Structure for High-Precision Gas Sensor Technology","authors":"Vahid Najafy, Bijan Abbasi-Arand, Maryam Hesari-Shermeh","doi":"10.1002/adpr.202400163","DOIUrl":"https://doi.org/10.1002/adpr.202400163","url":null,"abstract":"<p>It is a significant challenge to accurately identify and differentiate sample materials in the gas phase, especially when they have closely similar refractive indices. A promising solution in the THz range is to use plasmonic spoof surface structures configured in an Otto arrangement. Here, this study proposes a multilevel <i>meta</i>-grating structure sensor that achieves a remarkable improvement over the conventional binary-grating structure model. The proposed setup has been meticulously designed to maximize reflectance within the sensor's reflectance spectrum. This has been achieved by precisely adjusting the air gap distance, effectively minimizing the impact of sample material density. An in-depth analysis of gas samples with this structure shows a considerable increase in sensitivity with a small refractive index change up to 11.4 (TH/RIU), and the results are validated by simulating the reflection spectrum using the semi-analytical rigorous coupled wave analysis method. Moreover, the eigenmode solver in the CST Studio software is used to generate dispersion curves. The newly proposed design is particularly suitable for effectively detecting different gases with closely spaced refractive indices, making the proposed structure very useful in high-precision sensors that discern small refractive index changes.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 10","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400163","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145230682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mohammad Sadegh Zare, Asma Attariabad, Sevda Seyedmasoumian, Ali Farmani
A plasmonic reflective filter (PRF) based on monolayer graphene and four nanoscale cylindrical silica grooves inside a silver film is suggested and theoretically analyzed. The designed filter has a dual-band reflection and absorption spectra with a near-unity absorption value at resonance wavelengths located in near-infrared region. Furthermore, the two reflection dips can be tuned via harnessing graphene chemical potential. Application of subwavelength metallic structure as well as graphene layer contributes to the increased light–matter interactions and reinforces the light confinement in the nanoscale regions in the cylindrical grooves. As a result, near-zone electric field is highly enhanced and leads to the strong optical absorption of the filter. Also, the optical response of the proposed PRF is independent from the polarization of the incident light due to the symmetrical geometry of the structure. The suggested filter can be utilized in photonic integrated circuits.
{"title":"High-Quality-Factor, Compact Nanoplasmonic Filter Utilizing Graphene Metasurface at Near-Infrared Range","authors":"Mohammad Sadegh Zare, Asma Attariabad, Sevda Seyedmasoumian, Ali Farmani","doi":"10.1002/adpr.202400186","DOIUrl":"10.1002/adpr.202400186","url":null,"abstract":"<p>A plasmonic reflective filter (PRF) based on monolayer graphene and four nanoscale cylindrical silica grooves inside a silver film is suggested and theoretically analyzed. The designed filter has a dual-band reflection and absorption spectra with a near-unity absorption value at resonance wavelengths located in near-infrared region. Furthermore, the two reflection dips can be tuned via harnessing graphene chemical potential. Application of subwavelength metallic structure as well as graphene layer contributes to the increased light–matter interactions and reinforces the light confinement in the nanoscale regions in the cylindrical grooves. As a result, near-zone electric field is highly enhanced and leads to the strong optical absorption of the filter. Also, the optical response of the proposed PRF is independent from the polarization of the incident light due to the symmetrical geometry of the structure. The suggested filter can be utilized in photonic integrated circuits.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 8","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400186","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144767656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Andrew R. Kim, Chloe F. Doiron, Fernando J. Vega, Jaeyeon Yu, Alex M. Boehm, Joseph P. Klesko, Igal Brener, Raktim Sarma, Alexander Cerjan, Taisuke Ohta
All-Dielectric Metasurfaces
Confinement of light within nanostructures of increasingly smaller sizes has resulted in ever more precise control of light-matter interactions. In article number 2400223, Taisuke Ohta and co-workers demonstrate near-field imaging of volume-type photonic resonances within a dielectric metasurface using photoelectron emission microscopy. This imaging approach, utilizing far-field excitation and sub-optical wavelength spatial resolution, offers a new avenue for examining light–matter interactions within dielectric nanophotonic systems.
{"title":"Imaging Photonic Resonances within an All-Dielectric Metasurface via Photoelectron Emission Microscopy","authors":"Andrew R. Kim, Chloe F. Doiron, Fernando J. Vega, Jaeyeon Yu, Alex M. Boehm, Joseph P. Klesko, Igal Brener, Raktim Sarma, Alexander Cerjan, Taisuke Ohta","doi":"10.1002/adpr.70022","DOIUrl":"10.1002/adpr.70022","url":null,"abstract":"<p><b>All-Dielectric Metasurfaces</b>\u0000 </p><p>Confinement of light within nanostructures of increasingly smaller sizes has resulted in ever more precise control of light-matter interactions. In article number 2400223, Taisuke Ohta and co-workers demonstrate near-field imaging of volume-type photonic resonances within a dielectric metasurface using photoelectron emission microscopy. This imaging approach, utilizing far-field excitation and sub-optical wavelength spatial resolution, offers a new avenue for examining light–matter interactions within dielectric nanophotonic systems.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 6","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.70022","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144264410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Boris Perminov, Aram Mkrtchyan, Yuriy Gladush, Dmitry V. Krasnikov, Albert G. Nasibulin, Maria Chernysheva
Mid-infrared (IR) fiber lasers are crucial for applications in spectroscopy, medical diagnostics, and environmental sensing, owing to their ability to interact with fundamental molecular vibrational bands. However, achieving stable ultrafast pulse generation in this spectral range remains challenging due to the limited availability of robust saturable absorbers. For the first time, we demonstrate Q-switched mode-locking in an all-fiber Er-doped ZrF4-BaF2-LaF3-AlF3-NaF laser employing an aerosol-synthesized carbon nanotube (CNT) film. Furthermore, we compare the laser performance with pulse generation using a state-of-the-art GaSb-based semiconductor-saturable absorber mirror (SESAM) in an identical cavity design. The CNT-saturable absorber enables pulse generation with a minimum duration of 1.32 μs and a pulse energy of 1.4 μJ at an average output power of 63.1 mW. In contrast, the SESAM-based laser produces 345-ns pulses with a pulse energy reaching 3.84 μJ and an average power of 202 mW. These results provide new insights into the interplay between saturable absorber properties and mid-IR fiber laser performance, paving the way for next-generation compact ultrafast sources for scientific and industrial applications.
{"title":"Q-Switched Mode-Locking in Er-Doped ZrF4-BaF2-LaF3-AlF3-NaF Fiber Lasers Using Carbon Nanotube–Saturable Absorber and GaSb-Based Semiconductor-Saturable Absorber Mirror","authors":"Boris Perminov, Aram Mkrtchyan, Yuriy Gladush, Dmitry V. Krasnikov, Albert G. Nasibulin, Maria Chernysheva","doi":"10.1002/adpr.202500065","DOIUrl":"10.1002/adpr.202500065","url":null,"abstract":"<p>Mid-infrared (IR) fiber lasers are crucial for applications in spectroscopy, medical diagnostics, and environmental sensing, owing to their ability to interact with fundamental molecular vibrational bands. However, achieving stable ultrafast pulse generation in this spectral range remains challenging due to the limited availability of robust saturable absorbers. For the first time, we demonstrate Q-switched mode-locking in an all-fiber Er-doped ZrF<sub>4</sub>-BaF<sub>2</sub>-LaF<sub>3</sub>-AlF<sub>3</sub>-NaF laser employing an aerosol-synthesized carbon nanotube (CNT) film. Furthermore, we compare the laser performance with pulse generation using a state-of-the-art GaSb-based semiconductor-saturable absorber mirror (SESAM) in an identical cavity design. The CNT-saturable absorber enables pulse generation with a minimum duration of 1.32 μs and a pulse energy of 1.4 μJ at an average output power of 63.1 mW. In contrast, the SESAM-based laser produces 345-ns pulses with a pulse energy reaching 3.84 μJ and an average power of 202 mW. These results provide new insights into the interplay between saturable absorber properties and mid-IR fiber laser performance, paving the way for next-generation compact ultrafast sources for scientific and industrial applications.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 9","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500065","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145022404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In article number 2400147, Han Seb Moon and co-workers demonstrate high-performance telecom-wavelength biphoton generation using a hot 87Rb vapor cell. This study unveils, for the first time, a beat phenomenon in the signal photon’s auto-correlation function, arising from velocity-selective atomic classes in warm vapor. These findings advance practical telecom-band quantum light sources, offering new insights for quantum technologies.
{"title":"Biphoton Waveforms of Photon Pair from Velocity-Selective Atoms in a Doppler-Broadened Atomic Ensemble","authors":"Hansol Jeong, Heewoo Kim, Danbi Kim, Han Seb Moon","doi":"10.1002/adpr.70013","DOIUrl":"10.1002/adpr.70013","url":null,"abstract":"<p><b>Biphoton Waveforms</b>\u0000 </p><p>In article number 2400147, Han Seb Moon and co-workers demonstrate high-performance telecom-wavelength biphoton generation using a hot <sup>87</sup>Rb vapor cell. This study unveils, for the first time, a beat phenomenon in the signal photon’s auto-correlation function, arising from velocity-selective atomic classes in warm vapor. These findings advance practical telecom-band quantum light sources, offering new insights for quantum technologies.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 6","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.70013","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144264411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Paula Pérez-Peinado, Jaime Dolado, Pedro L. Alcázar Ruano, Daniel Carrasco, Ruth Martínez-Casado, Valentina Bonino, Gema Martínez-Criado, Jani Jesenovec, John S. McCloy, Francisco Domínguez-Adame, Jorge Quereda, Emilio Nogales, Bianchi Méndez
Monoclinic β- is a key representative material of the ultrawide-bandgap semiconductor family. The distinct atomic arrangement in β- introduces two coordination environments for Ga ions, resulting in pronounced anisotropy in its optical, electronic, and thermal properties. In this study, a synchrotron nanoprobe to investigate the anisotropic optical properties of well-oriented β- nanomembranes with a thickness of nm, produced through mechanical exfoliation, is employed. Polarization-resolved X-ray excited optical luminescence (XEOL) measurements reveal a strong ultraviolet (UV) emission band at
单斜斜β- Ga 2 O 3 $左（text{Ga}右）_{2}左（text{O}右）_{3}$是超宽带隙半导体家族的关键代表材料。β- Ga 2 O 3 $左（text{Ga}右）_{2}左（text{O}右）_{3}$中不同的原子排列引入了Ga离子的两种配位环境，导致其在光学、电子和热性能上具有明显的各向异性。在本研究中，利用同步加速器纳米探针研究了良好取向（100）$left（right）的各向异性光学特性。100年离开了。右)$ β- Ga 2 O 3 $左（text{Ga}右）_{2}左（text{O}右）_{3}$厚度为200的纳米膜$200$ nm，通过机械去角质生产。偏振分辨x射线激发光学发光（XEOL）测量显示，在3.4$ 3.4$ eV处有一个强紫外（UV）发射带，该波段沿c轴呈强偏振。此外，XEOL数据显示蓝色（2.9$ 2.9$ eV）和深紫外（3.8$ 3.8$ eV）辐射。值得注意的是，在传统的光致发光研究中很少报道的深紫外波段归因于Ga空位的存在，这得到了第一性原理计算的支持。偏振依赖的x射线吸收近边结构（XANES）光谱学允许人们探测b和c晶体平面的独特对称性。此外，通过结合XANES和XEOL，本研究探讨了Ga离子对发光过程的位点特异性贡献。这些发现突出了β- Ga 2 O 3 $左（text{Ga}右）_{2}左（text{O}右）_{3}$纳米膜作为开发极化敏感材料的强大材料平台的潜力设备。β- Ga 2 O 3 $left(text{Ga}right)_{2} left(text{O}right)_{3}$具有明显的各向异性，导致了取向依赖的光电特性。使其成为广泛的高级应用的极有前途的候选者。
{"title":"Proving Optical Anisotropy and Polarization Effects in β-\u0000 \u0000 \u0000 \u0000 \u0000 Ga\u0000 \u0000 2\u0000 \u0000 \u0000 O\u0000 3\u0000 \u0000 \u0000 $left(text{Ga}right)_{2} left(text{O}right)_{3}$\u0000 Nanomembranes via X-Ray Excited Optical Luminescence","authors":"Paula Pérez-Peinado, Jaime Dolado, Pedro L. Alcázar Ruano, Daniel Carrasco, Ruth Martínez-Casado, Valentina Bonino, Gema Martínez-Criado, Jani Jesenovec, John S. McCloy, Francisco Domínguez-Adame, Jorge Quereda, Emilio Nogales, Bianchi Méndez","doi":"10.1002/adpr.202500043","DOIUrl":"https://doi.org/10.1002/adpr.202500043","url":null,"abstract":"<p>Monoclinic <i>β</i>-<span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mrow>\u0000 <mtext>Ga</mtext>\u0000 </mrow>\u0000 <mn>2</mn>\u0000 </msub>\u0000 <msub>\u0000 <mi>O</mi>\u0000 <mn>3</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$left(text{Ga}right)_{2} left(text{O}right)_{3}$</annotation>\u0000 </semantics></math> is a key representative material of the ultrawide-bandgap semiconductor family. The distinct atomic arrangement in <i>β</i>-<span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mrow>\u0000 <mtext>Ga</mtext>\u0000 </mrow>\u0000 <mn>2</mn>\u0000 </msub>\u0000 <msub>\u0000 <mi>O</mi>\u0000 <mn>3</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$left(text{Ga}right)_{2} left(text{O}right)_{3}$</annotation>\u0000 </semantics></math> introduces two coordination environments for Ga ions, resulting in pronounced anisotropy in its optical, electronic, and thermal properties. In this study, a synchrotron nanoprobe to investigate the anisotropic optical properties of well-oriented <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mo>(</mo>\u0000 <mn>100</mn>\u0000 <mo>)</mo>\u0000 </mrow>\u0000 <annotation>$left(right. 100 left.right)$</annotation>\u0000 </semantics></math> <i>β</i>-<span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <msub>\u0000 <mrow>\u0000 <mtext>Ga</mtext>\u0000 </mrow>\u0000 <mn>2</mn>\u0000 </msub>\u0000 <msub>\u0000 <mi>O</mi>\u0000 <mn>3</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>$left(text{Ga}right)_{2} left(text{O}right)_{3}$</annotation>\u0000 </semantics></math> nanomembranes with a thickness of <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mn>200</mn>\u0000 </mrow>\u0000 <annotation>$200$</annotation>\u0000 </semantics></math> nm, produced through mechanical exfoliation, is employed. Polarization-resolved X-ray excited optical luminescence (XEOL) measurements reveal a strong ultraviolet (UV) emission band at <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mn>3.4</mn>\u0000 </mrow>\u0000 <annotation>$3.4$</annotation>\u0000 </sema","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 10","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500043","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145230759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An advanced complementary metal-oxide-semiconductor (CMOS)compatible graphene/silicon multispectral active metasurfaces are investigated based on guided-mode resonance filters. The simulated results show a high extinction ratio (>25 dB), narrow linewidth (≈1.5 @1550 nm), quality factor of Q ≈ 1000, and polarization-insensitive operation. By taking advantage of graphene broadband absorption, the device operation is presented in the multiple spectral bands (NIR-MIR) using simple geometrical scaling rules. The same device architecture can be employed for combined electro-optic and thermo-optic tuning using graphene as an integrated microheater. This work contributes to the development of advanced broadband silicon-based active metasurfaces for tunable spectral filters and laser mirrors, optical switches, modulators, and sensors.
{"title":"Multispectral Polarization-Insensitive Graphene/Silicon Guided Mode Resonance Active Metasurfaces","authors":"Prateeksha Sharma, Dor Oz, Eleftheria Lampadariou, Spyros Doukas, Elefterios Lidorikis, Ilya Goykhman","doi":"10.1002/adpr.202500072","DOIUrl":"10.1002/adpr.202500072","url":null,"abstract":"<p>An advanced complementary metal-oxide-semiconductor (CMOS)compatible graphene/silicon multispectral active metasurfaces are investigated based on guided-mode resonance filters. The simulated results show a high extinction ratio (>25 dB), narrow linewidth (≈1.5 @1550 nm), quality factor of Q ≈ 1000, and polarization-insensitive operation. By taking advantage of graphene broadband absorption, the device operation is presented in the multiple spectral bands (NIR-MIR) using simple geometrical scaling rules. The same device architecture can be employed for combined electro-optic and thermo-optic tuning using graphene as an integrated microheater. This work contributes to the development of advanced broadband silicon-based active metasurfaces for tunable spectral filters and laser mirrors, optical switches, modulators, and sensors.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 8","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500072","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144767821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Vladimir R. Tuz, Vyacheslav V. Khardikov, Izzatjon Allayarov, Antonio Calà Lesina, Andrey B. Evlyukhin
The development of modern optical communication systems requires specific waveguides, given that the widely used fiber-optic components are poorly integrated with planar technologies. For planarization in the millimeter-wave and subterahertz bands, so-called gap waveguides are proposed, offering low-loss performance and cost-efficient manufacturing. Hence, the utilization of this technology in the optical range is very promising. Herein, a strategy for designing gap waveguides made of two metasurfaces composed of dielectric disk-shaped resonators operated in hybrid HE (magnetic dipole) and EH (electric dipole) modes is proposed. The coupled dipole model is applied to the complex multiple-scattering problem by substituting each resonator as an electric and magnetic dipole, providing equations for the efficient calculation of metasurface reflection and transmission properties. It is demonstrated that with the correct choice of metasurface geometry providing their resonant reflection conditions, a waveguide channel can be implemented between a pair of metasurfaces, which allows propagation of the transverse electric and transverse magnetic waves similar to those of a parallel plate waveguide with perfectly conducting either electric or magnetic walls. This approach may be seen as a novel metasurface-based waveguide structure that uses flexibly mediated boundary conditions to control electromagnetic wave propagation.
{"title":"All-Dielectric Metasurface-Based Gap Waveguides","authors":"Vladimir R. Tuz, Vyacheslav V. Khardikov, Izzatjon Allayarov, Antonio Calà Lesina, Andrey B. Evlyukhin","doi":"10.1002/adpr.202500128","DOIUrl":"10.1002/adpr.202500128","url":null,"abstract":"<p>The development of modern optical communication systems requires specific waveguides, given that the widely used fiber-optic components are poorly integrated with planar technologies. For planarization in the millimeter-wave and subterahertz bands, so-called gap waveguides are proposed, offering low-loss performance and cost-efficient manufacturing. Hence, the utilization of this technology in the optical range is very promising. Herein, a strategy for designing gap waveguides made of two metasurfaces composed of dielectric disk-shaped resonators operated in hybrid HE (magnetic dipole) and EH (electric dipole) modes is proposed. The coupled dipole model is applied to the complex multiple-scattering problem by substituting each resonator as an electric and magnetic dipole, providing equations for the efficient calculation of metasurface reflection and transmission properties. It is demonstrated that with the correct choice of metasurface geometry providing their resonant reflection conditions, a waveguide channel can be implemented between a pair of metasurfaces, which allows propagation of the transverse electric and transverse magnetic waves similar to those of a parallel plate waveguide with perfectly conducting either electric or magnetic walls. This approach may be seen as a novel metasurface-based waveguide structure that uses flexibly mediated boundary conditions to control electromagnetic wave propagation.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 9","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500128","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145021923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mrudul Modak, Muhammad M. A. Mirza, Xin Yi, Qingyu Tian, Lisa Saalbach, Fiona Fleming, Jaroslaw Kirdoda, Derek C. S. Dumas, Xiao Jin, Charlie Smith, Levi Tegg, Sima Aminorroaya Yamini, John P. R. David, Douglas J. Paul, Ross W. Millar, Gerald S. Buller
Germanium-containing short-wave infrared (SWIR) avalanche photodiode (APD) arrays on silicon platforms have the potential for monolithic integration into complementary metal-oxide-semiconductor (CMOS) integrated circuits, making them mass-manufacturable, high-performance, arrayed optical detectors operating at wavelengths beyond the silicon cut-off wavelength. Here, the first high-performance, surface-illuminated, 10-pixel linear array of pseudoplanar geometry germanium-on-silicon (Ge-on-Si) APDs operating at 1550 nm wavelength and at temperatures up to 378 K are demonstrated. At room temperature, the dark current, avalanche gain, responsivity, and avalanche breakdown of the devices show good uniformity. Array A exhibits a mean dark current density of 198 ± 62 mA cm−2 at 90% of the breakdown voltage. The excess noise factor is less than half that of InP-based SWIR APD arrays, which allows Ge-on-Si devices to operate at a higher avalanche gain. A responsivity of 8.2 A W−1 at a gain of 20 and excess noise of 3.3 is achieved when illuminated with 1550 nm wavelength light. The detector array also demonstrates stable performance at 378 K with a maximum avalanche gain of 24. This device architecture will be applicable for the design of large-scale APD arrays on Si platforms for SWIR detection which can be used in imaging, sensing, and optical communication applications.
硅平台上的含锗短波红外（SWIR）雪崩光电二极管（APD）阵列具有单片集成到互补金属氧化物半导体（CMOS）集成电路中的潜力，使其成为可批量生产的高性能阵列光学探测器，其工作波长超过硅截止波长。在这里，展示了第一个高性能，表面照明，伪平面几何锗硅（Ge-on-Si） apd的10像素线性阵列，工作波长为1550 nm，温度高达378 K。在室温下，器件的暗电流、雪崩增益、响应度和雪崩击穿均表现出良好的均匀性。阵列A在90%击穿电压下的平均暗电流密度为198±62 mA cm−2。多余的噪声系数小于基于inp的SWIR APD阵列的一半，这使得Ge-on-Si器件可以在更高的雪崩增益下工作。当波长为1550nm的光照射时，响应度为8.2 A W−1，增益为20，多余噪声为3.3。该探测器阵列在378 K时也表现出稳定的性能，最大雪崩增益为24。该器件架构将适用于在Si平台上设计用于SWIR检测的大规模APD阵列，可用于成像，传感和光通信应用。
{"title":"CMOS-Compatible Short-Wave Infrared Linear Arrays of Ge-on-Si Avalanche Photodiodes","authors":"Mrudul Modak, Muhammad M. A. Mirza, Xin Yi, Qingyu Tian, Lisa Saalbach, Fiona Fleming, Jaroslaw Kirdoda, Derek C. S. Dumas, Xiao Jin, Charlie Smith, Levi Tegg, Sima Aminorroaya Yamini, John P. R. David, Douglas J. Paul, Ross W. Millar, Gerald S. Buller","doi":"10.1002/adpr.202500005","DOIUrl":"10.1002/adpr.202500005","url":null,"abstract":"<p>Germanium-containing short-wave infrared (SWIR) avalanche photodiode (APD) arrays on silicon platforms have the potential for monolithic integration into complementary metal-oxide-semiconductor (CMOS) integrated circuits, making them mass-manufacturable, high-performance, arrayed optical detectors operating at wavelengths beyond the silicon cut-off wavelength. Here, the first high-performance, surface-illuminated, 10-pixel linear array of pseudoplanar geometry germanium-on-silicon (Ge-on-Si) APDs operating at 1550 nm wavelength and at temperatures up to 378 K are demonstrated. At room temperature, the dark current, avalanche gain, responsivity, and avalanche breakdown of the devices show good uniformity. Array A exhibits a mean dark current density of 198 ± 62 mA cm<sup>−2</sup> at 90% of the breakdown voltage. The excess noise factor is less than half that of InP-based SWIR APD arrays, which allows Ge-on-Si devices to operate at a higher avalanche gain. A responsivity of 8.2 A W<sup>−1</sup> at a gain of 20 and excess noise of 3.3 is achieved when illuminated with 1550 nm wavelength light. The detector array also demonstrates stable performance at 378 K with a maximum avalanche gain of 24. This device architecture will be applicable for the design of large-scale APD arrays on Si platforms for SWIR detection which can be used in imaging, sensing, and optical communication applications.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 9","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500005","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145021920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Linbojie Huang, Zichen Liu, Lin Wu, Zhongyi Li, Juan Chen, Chao Li, Jin Tao, Zhixue He, Shaohua Yu
A high-isolation liquid crystal on silicon (LCoS)-based optical switch realized by genetic algorithm (GA)-assisted method for parameterized hologram generation is proposed and experimentally demonstrated. The proposed method can simultaneously suppress all higher order diffraction crosstalk caused by the fringing of the electric field in LCoS. The hologram on the LCoS is parameterized, and a GA is employed to efficiently find out the optimal parameters. The simulation results indicate that the crosstalk induced by high-order diffraction beams can be reduced to below −50 dB over 100 operational cycles.
{"title":"High-Isolation LCoS-Based Optical Switch with Phase Hologram Parameter Optimization","authors":"Linbojie Huang, Zichen Liu, Lin Wu, Zhongyi Li, Juan Chen, Chao Li, Jin Tao, Zhixue He, Shaohua Yu","doi":"10.1002/adpr.202500063","DOIUrl":"10.1002/adpr.202500063","url":null,"abstract":"<p>A high-isolation liquid crystal on silicon (LCoS)-based optical switch realized by genetic algorithm (GA)-assisted method for parameterized hologram generation is proposed and experimentally demonstrated. The proposed method can simultaneously suppress all higher order diffraction crosstalk caused by the fringing of the electric field in LCoS. The hologram on the LCoS is parameterized, and a GA is employed to efficiently find out the optimal parameters. The simulation results indicate that the crosstalk induced by high-order diffraction beams can be reduced to below −50 dB over 100 operational cycles.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 9","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500063","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145022188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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