April M. Logan, Xia Chen, Xingshi Yu, Weihong Shen, Xingzhao Yan, Weiwei Zhang, Goran Z. Mashanovich, Graham T. Reed, David J. Thomson
Methods for high resolution phase trimming of silicon Mach–Zehnder interferometers via the electrical annealing of amorphized waveguide sections are presented. A high resolution of phase change is necessary to accurately trim the performance of individual devices to correct fabrication errors and when scaling to large programmable photonic circuits. On-chip microheaters positioned above amorphous waveguide sections are driven by short voltage pulses, causing a degree of recrystallization, controllably changing the material's refractive index. An average resolution of phase change per voltage pulse of 0.0007π is demonstrated if an adaptive method is employed, where the voltage step between successive pulses is set to be dependent on the average phase change brought about by the previous three voltage pulses.
{"title":"Towards High Resolution Trimming of Silicon Photonic Waveguides","authors":"April M. Logan, Xia Chen, Xingshi Yu, Weihong Shen, Xingzhao Yan, Weiwei Zhang, Goran Z. Mashanovich, Graham T. Reed, David J. Thomson","doi":"10.1002/adpr.202500298","DOIUrl":"https://doi.org/10.1002/adpr.202500298","url":null,"abstract":"<p>Methods for high resolution phase trimming of silicon Mach–Zehnder interferometers via the electrical annealing of amorphized waveguide sections are presented. A high resolution of phase change is necessary to accurately trim the performance of individual devices to correct fabrication errors and when scaling to large programmable photonic circuits. On-chip microheaters positioned above amorphous waveguide sections are driven by short voltage pulses, causing a degree of recrystallization, controllably changing the material's refractive index. An average resolution of phase change per voltage pulse of 0.0007π is demonstrated if an adaptive method is employed, where the voltage step between successive pulses is set to be dependent on the average phase change brought about by the previous three voltage pulses.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"7 2","pages":""},"PeriodicalIF":3.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500298","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146147927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shanshan Li, Ge Zhu, Dongpeng Wang, Liqing Yan, Zhuowei Li, Bin Dong
Near-infrared phosphor-converted light emitting diodes (NIR pc-LEDs) have emerged as a revolutionary photonic technology with significant applications in nondestructive inspection, biomedicine and night vision imaging. Crucially, the performance of NIR pc-LEDs depends on the luminescence properties of NIR-emitting phosphors. This review systematically summarizes the recent advances in garnet-structured NIR-emitting phosphors. The basic luminescence fundamentals and spectral characteristics of garnet-structured NIR-emitting phosphors doped with transition metal ions (Cr3+, Fe3+, and Ni2+) and rare-earth ions (Eu2+ and Yb3+) are examined, and the corresponding performance regulation strategies are discussed. The potential applications enabled by garnet NIR-emitting phosphors in biomedicine, component detection, plant growth and solar cells are explored. Finally, it outlines the critical challenges and opportunities of garnet NIR-emitting phosphors for next-generation photonic applications.
{"title":"Garnet-Structured Near-Infrared Luminescent Materials: Luminescence Fundamentals, Regulation and Applications","authors":"Shanshan Li, Ge Zhu, Dongpeng Wang, Liqing Yan, Zhuowei Li, Bin Dong","doi":"10.1002/adpr.202500251","DOIUrl":"https://doi.org/10.1002/adpr.202500251","url":null,"abstract":"<p>Near-infrared phosphor-converted light emitting diodes (NIR pc-LEDs) have emerged as a revolutionary photonic technology with significant applications in nondestructive inspection, biomedicine and night vision imaging. Crucially, the performance of NIR pc-LEDs depends on the luminescence properties of NIR-emitting phosphors. This review systematically summarizes the recent advances in garnet-structured NIR-emitting phosphors. The basic luminescence fundamentals and spectral characteristics of garnet-structured NIR-emitting phosphors doped with transition metal ions (Cr<sup>3+</sup>, Fe<sup>3+</sup>, and Ni<sup>2+</sup>) and rare-earth ions (Eu<sup>2+</sup> and Yb<sup>3+</sup>) are examined, and the corresponding performance regulation strategies are discussed. The potential applications enabled by garnet NIR-emitting phosphors in biomedicine, component detection, plant growth and solar cells are explored. Finally, it outlines the critical challenges and opportunities of garnet NIR-emitting phosphors for next-generation photonic applications.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"7 1","pages":""},"PeriodicalIF":3.9,"publicationDate":"2026-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500251","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146196979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
<p>Efficient mode coupling between dielectric and metallic hollow waveguides is critical in the development of integrated terahertz systems based on all-silicon platforms. Conventional dielectric linear tapers, while commonly used, require long and thin structures, typically 3 <span></span><math>