CuInP2S6 (CIPS) exhibits significant potential for applications in high-integration ferroelectric devices, due to its van der Waals layered structure, which features dangling-bond-free surfaces and maintains room-temperature ferroelectricity down to nanometer-scale thicknesses. A key limitation to its practical application is its moderate polarization strength. This study reports the polarization evolution of CIPS across a wide range of temperatures and pressures and elucidates the mechanisms underlying polarization enhancement under various conditions. The polarization enhancement observed under high-pressure-high-temperature conditions is attributed to the increased occupancy of Cu ions at out-of-plane (CuO) sites, which correspond to high-polarization configurations. In contrast, the high-pressure-low-temperature polarization improvement stems from enhanced ordering of Cu ions. Furthermore, a phase diagram of CIPS over a wide range of temperatures and pressures was established based on Raman spectroscopy and ferroelectric polarization measurements. This diagram further illustrates dipole ordering and Cu-ion freezing in the low-temperature Cc phase. This work provides valuable insights into the thermodynamic and kinetic manipulation of ferroelectric polarization via stress engineering, offering both foundational principles and a deeper understanding of two-dimensional van der Waals ferroelectrics and their potential applications.
{"title":"Phase diagram of CuInP2S6 across wide temperature and pressure ranges","authors":"Yifan Li, Yongfa Luo, Xiaodong Yao, Yinxin Bai, Junling Wang, Jinlong Zhu","doi":"10.1063/5.0299899","DOIUrl":"https://doi.org/10.1063/5.0299899","url":null,"abstract":"CuInP2S6 (CIPS) exhibits significant potential for applications in high-integration ferroelectric devices, due to its van der Waals layered structure, which features dangling-bond-free surfaces and maintains room-temperature ferroelectricity down to nanometer-scale thicknesses. A key limitation to its practical application is its moderate polarization strength. This study reports the polarization evolution of CIPS across a wide range of temperatures and pressures and elucidates the mechanisms underlying polarization enhancement under various conditions. The polarization enhancement observed under high-pressure-high-temperature conditions is attributed to the increased occupancy of Cu ions at out-of-plane (CuO) sites, which correspond to high-polarization configurations. In contrast, the high-pressure-low-temperature polarization improvement stems from enhanced ordering of Cu ions. Furthermore, a phase diagram of CIPS over a wide range of temperatures and pressures was established based on Raman spectroscopy and ferroelectric polarization measurements. This diagram further illustrates dipole ordering and Cu-ion freezing in the low-temperature Cc phase. This work provides valuable insights into the thermodynamic and kinetic manipulation of ferroelectric polarization via stress engineering, offering both foundational principles and a deeper understanding of two-dimensional van der Waals ferroelectrics and their potential applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"73 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145807617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tuğbey Kocabaş, Murat Keçeli, Tanju Gürel, Milorad V. Milošević, Cem Sevik
Group-VI transition metal dichalcogenides (TMDs), MoS2 and MoSe2, have emerged as prototypical low-dimensional systems with distinctive phononic and electronic properties, making them attractive for applications in nanoelectronics, optoelectronics, and thermoelectrics. However, their reported lattice thermal conductivities (κ) remain highly inconsistent, with experimental values and theoretical predictions differing by more than an order of magnitude. These discrepancies stem from uncertainties in measurement techniques, variations in computational protocols, and ambiguities in the treatment of higher-order anharmonic processes. In this study, we critically review these inconsistencies, first by mapping the spread of experimental and modeling results, and then by identifying the methodological origins of divergence. To this end, we bridge first-principles calculations, molecular dynamics simulations, and state-of-the-art machine learning force fields (MLFFs), including recently developed foundation models. We train and benchmark GAP, MACE, NEP, and HIPHIVE against density functional theory and rigorously evaluate the impact of third- and fourth-order phonon scattering processes on κ. The computational efficiency of MLFFs enables us to extend convergence tests beyond conventional limits and to validate predictions through homogeneous nonequilibrium molecular dynamics as well. Our analysis demonstrates that, contrary to some recent claims, fully converged four-phonon processes contribute negligibly to the intrinsic thermal conductivity of both MoS2 and MoSe2. These findings not only refine the intrinsic transport limits of 2D TMDs but also establish MLFF-based approaches as a robust and scalable framework for predictive modeling of phonon-mediated thermal transport in low-dimensional materials.
{"title":"Thermal conductivity limits of MoS2 and MoSe2: Revisiting high-order anharmonic lattice dynamics with machine learning potentials","authors":"Tuğbey Kocabaş, Murat Keçeli, Tanju Gürel, Milorad V. Milošević, Cem Sevik","doi":"10.1063/5.0300627","DOIUrl":"https://doi.org/10.1063/5.0300627","url":null,"abstract":"Group-VI transition metal dichalcogenides (TMDs), MoS2 and MoSe2, have emerged as prototypical low-dimensional systems with distinctive phononic and electronic properties, making them attractive for applications in nanoelectronics, optoelectronics, and thermoelectrics. However, their reported lattice thermal conductivities (κ) remain highly inconsistent, with experimental values and theoretical predictions differing by more than an order of magnitude. These discrepancies stem from uncertainties in measurement techniques, variations in computational protocols, and ambiguities in the treatment of higher-order anharmonic processes. In this study, we critically review these inconsistencies, first by mapping the spread of experimental and modeling results, and then by identifying the methodological origins of divergence. To this end, we bridge first-principles calculations, molecular dynamics simulations, and state-of-the-art machine learning force fields (MLFFs), including recently developed foundation models. We train and benchmark GAP, MACE, NEP, and HIPHIVE against density functional theory and rigorously evaluate the impact of third- and fourth-order phonon scattering processes on κ. The computational efficiency of MLFFs enables us to extend convergence tests beyond conventional limits and to validate predictions through homogeneous nonequilibrium molecular dynamics as well. Our analysis demonstrates that, contrary to some recent claims, fully converged four-phonon processes contribute negligibly to the intrinsic thermal conductivity of both MoS2 and MoSe2. These findings not only refine the intrinsic transport limits of 2D TMDs but also establish MLFF-based approaches as a robust and scalable framework for predictive modeling of phonon-mediated thermal transport in low-dimensional materials.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"12 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145807832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ze-Wen Chen, Xuan-Jun Wang, Rong-Hua Du, Kai-Wen Du, Jia-Yi He, Bing-Jian Zhang, Ke-Xiang Wei, Guang Meng, Hong-Xiang Zou, Lin-Chuan Zhao
Lower limb motion monitoring is in high demand across various application scenarios, such as sports training and rehabilitation. However, existing monitoring systems face significant challenges, including limited power supply sustainability and the lack of mature technologies for three-dimensional motion sensing. To overcome these limitations, this study presents a self-powered three-dimensional lower limb motion monitoring system with full-posture biomechanical energy harvesting capability (TDLM-FPBEH). The system integrates a full-posture biomechanical energy harvester (FPBEH) and a three-dimensional sensing triboelectric nanogenerator (TDS-TENG). The main component of the FPBEH is mounted on the human back, which is more suitable for load-bearing, and it harvests energy from various motion postures without imposing any rigid constraints on body movement, thereby achieving high output power. Meanwhile, the TDS-TENG accurately detects both the direction and the displacement of lower limb movements, enabling comprehensive three-dimensional motion tracking. Experimental results show that under traction excitation at a frequency of 1 Hz and a displacement of 300 mm, a single FPBEH unit delivers an average output power of up to 3.99 W. Furthermore, wearability tests confirm the FPBEH's strong adaptability to various users and motion patterns. The TDS-TENG demonstrates sensitivity to different directions and amplitudes of movement, producing distinguishable electrical signals. Demonstrations involving representative football movements further validate the feasibility of this system for self-powered three-dimensional lower limb motion tracking. Overall, the proposed system offers an integrated solution for sustainable energy harvesting and precise 3D motion monitoring, supporting the requirements of diverse real-world applications.
{"title":"A self-powered three-dimensional lower-limb motion monitoring system with full-posture biomechanical energy harvesting capability","authors":"Ze-Wen Chen, Xuan-Jun Wang, Rong-Hua Du, Kai-Wen Du, Jia-Yi He, Bing-Jian Zhang, Ke-Xiang Wei, Guang Meng, Hong-Xiang Zou, Lin-Chuan Zhao","doi":"10.1063/5.0303989","DOIUrl":"https://doi.org/10.1063/5.0303989","url":null,"abstract":"Lower limb motion monitoring is in high demand across various application scenarios, such as sports training and rehabilitation. However, existing monitoring systems face significant challenges, including limited power supply sustainability and the lack of mature technologies for three-dimensional motion sensing. To overcome these limitations, this study presents a self-powered three-dimensional lower limb motion monitoring system with full-posture biomechanical energy harvesting capability (TDLM-FPBEH). The system integrates a full-posture biomechanical energy harvester (FPBEH) and a three-dimensional sensing triboelectric nanogenerator (TDS-TENG). The main component of the FPBEH is mounted on the human back, which is more suitable for load-bearing, and it harvests energy from various motion postures without imposing any rigid constraints on body movement, thereby achieving high output power. Meanwhile, the TDS-TENG accurately detects both the direction and the displacement of lower limb movements, enabling comprehensive three-dimensional motion tracking. Experimental results show that under traction excitation at a frequency of 1 Hz and a displacement of 300 mm, a single FPBEH unit delivers an average output power of up to 3.99 W. Furthermore, wearability tests confirm the FPBEH's strong adaptability to various users and motion patterns. The TDS-TENG demonstrates sensitivity to different directions and amplitudes of movement, producing distinguishable electrical signals. Demonstrations involving representative football movements further validate the feasibility of this system for self-powered three-dimensional lower limb motion tracking. Overall, the proposed system offers an integrated solution for sustainable energy harvesting and precise 3D motion monitoring, supporting the requirements of diverse real-world applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"24 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145807661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Banerjee, C. Bell, C. Ciccarelli, T. Hesjedal, F. Johnson, H. Kurebayashi, T. A. Moore, C. Moutafis, H. L. Stern, I. J. Vera-Marun, J. Wade, C. Barton, M. R. Connolly, N. J. Curson, K. Fallon, A. J. Fisher, D. A. Gangloff, W. Griggs, E. Linfield, C. H. Marrows, A. Rossi, F. Schindler, J. Smith, T. Thomson, O. Kazakova
In this perspective article, we explore some of the promising spin and topology material platforms (e.g., spins in semiconductors and superconductors, skyrmionic, topological, and two-dimensional materials) being developed for such quantum components as qubits, superconducting memories, sensing, and metrological standards, and discuss their figures of merit. Spin- and topology-related quantum phenomena have several advantages, including high coherence time, topological protection and stability, low error rate, relative ease of engineering and control, and simple initiation and readout. However, the relevant technologies are at different stages of research and development, and here, we discuss their state-of-the-art, potential applications, challenges, and solutions.
{"title":"Materials for quantum technologies: A roadmap for spin and topology","authors":"N. Banerjee, C. Bell, C. Ciccarelli, T. Hesjedal, F. Johnson, H. Kurebayashi, T. A. Moore, C. Moutafis, H. L. Stern, I. J. Vera-Marun, J. Wade, C. Barton, M. R. Connolly, N. J. Curson, K. Fallon, A. J. Fisher, D. A. Gangloff, W. Griggs, E. Linfield, C. H. Marrows, A. Rossi, F. Schindler, J. Smith, T. Thomson, O. Kazakova","doi":"10.1063/5.0294020","DOIUrl":"https://doi.org/10.1063/5.0294020","url":null,"abstract":"In this perspective article, we explore some of the promising spin and topology material platforms (e.g., spins in semiconductors and superconductors, skyrmionic, topological, and two-dimensional materials) being developed for such quantum components as qubits, superconducting memories, sensing, and metrological standards, and discuss their figures of merit. Spin- and topology-related quantum phenomena have several advantages, including high coherence time, topological protection and stability, low error rate, relative ease of engineering and control, and simple initiation and readout. However, the relevant technologies are at different stages of research and development, and here, we discuss their state-of-the-art, potential applications, challenges, and solutions.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"94 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145807618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Gallium oxide-based (GaOx-based) photodetectors possess outstanding weak solar-blind signal detection capability due to low background noise. The bipolar photodetectors with polarity-switchable photoresponse take advantage of multi-dimensional signal recognition and signal processing efficiency. However, as-reported bipolar photodetectors are limited primarily to complex multi-layer heterojunction architectures based on either multi-wavelength absorption or a competitive photoresponse mechanism. The lack of a regulation scheme for implementing and optimizing polarity-switchable photoresponse of simple-structured GaOx-based photodetectors becomes a bottleneck for friendly integration and efficient signal recognition. Herein, introducing a ferroelectric component endows amorphous GaOx/Hf0.5Zr0.5O2 (a-GaOx/HZO) heterojunction photodetectors with programmable self-powered characteristics. The self-powered solar-blind photodetector (SSBPD) exhibits boosted polarity-switchable photoresponse by the coupling of ferro-pyro-phototronic effect. A switchover between positive to negative photoresponse is enabled by switching polarization from the upward state to the downward state. Photo-induced pyroelectric effect boosts bipolar photoresponse of the SSBPD characterized by four-stage photocurrent dynamic behavior. Under superposition contributions of programmable ferroelectric polarization and pyroelectric effect, the photoresponse enhancement factor of the SSBPD is 341% (226%) under upward (downward)-polarization state. Correspondingly, the maximum responsivity and detectivity are up to 0.26 mA/W and 4.47 × 108 Jones, respectively. The SSBPD maintains excellent durability over a wide temperature range. Based on programmable bipolar photoresponse, a-GaOx/HZO photoelectric device displays application prospects in simulating a self-adaptive neuromorphic vision system and a nighttime anti-collision monitoring system. This work proposes a strategy to develop simple-architecture GaOx-based bipolar photodetectors by multiple-effect coupling.
{"title":"Enabling bipolar photoresponse improvement of a-GaOx/Hf0.5Zr0.5O2 heterojunction self-powered solar-blind photodetector by coupling ferro-pyro-phototronic effect","authors":"Hao Xu, Bei Liu, Ling Xin, Weixu Hou, Yikun Li, Wenbo Peng, Qianqian Han, Yuanzheng Zhang, Yaju Zhang, Haiwu Zheng","doi":"10.1063/5.0280051","DOIUrl":"https://doi.org/10.1063/5.0280051","url":null,"abstract":"Gallium oxide-based (GaOx-based) photodetectors possess outstanding weak solar-blind signal detection capability due to low background noise. The bipolar photodetectors with polarity-switchable photoresponse take advantage of multi-dimensional signal recognition and signal processing efficiency. However, as-reported bipolar photodetectors are limited primarily to complex multi-layer heterojunction architectures based on either multi-wavelength absorption or a competitive photoresponse mechanism. The lack of a regulation scheme for implementing and optimizing polarity-switchable photoresponse of simple-structured GaOx-based photodetectors becomes a bottleneck for friendly integration and efficient signal recognition. Herein, introducing a ferroelectric component endows amorphous GaOx/Hf0.5Zr0.5O2 (a-GaOx/HZO) heterojunction photodetectors with programmable self-powered characteristics. The self-powered solar-blind photodetector (SSBPD) exhibits boosted polarity-switchable photoresponse by the coupling of ferro-pyro-phototronic effect. A switchover between positive to negative photoresponse is enabled by switching polarization from the upward state to the downward state. Photo-induced pyroelectric effect boosts bipolar photoresponse of the SSBPD characterized by four-stage photocurrent dynamic behavior. Under superposition contributions of programmable ferroelectric polarization and pyroelectric effect, the photoresponse enhancement factor of the SSBPD is 341% (226%) under upward (downward)-polarization state. Correspondingly, the maximum responsivity and detectivity are up to 0.26 mA/W and 4.47 × 108 Jones, respectively. The SSBPD maintains excellent durability over a wide temperature range. Based on programmable bipolar photoresponse, a-GaOx/HZO photoelectric device displays application prospects in simulating a self-adaptive neuromorphic vision system and a nighttime anti-collision monitoring system. This work proposes a strategy to develop simple-architecture GaOx-based bipolar photodetectors by multiple-effect coupling.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"21 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145770590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bowen Zhang, Zheng Gong, Ruoxi Chen, Xuhuinan Chen, Yi Yang, Hongsheng Chen, Ido Kaminer, Xiao Lin
It has long been thought that the reversed Cherenkov radiation is impossible in homogeneous media with a positive refractive index n. Here, we break this long-held belief by revealing the possibility of creating reversed Cherenkov radiation from homogeneous positive-index moving media. The underlying mechanism is essentially related to the Fizeau–Fresnel drag effect, which provides a unique route to drag the emitted light in the direction of the moving medium and thus enables the possibility of dragging the emitted light in the opposite direction of the moving charged particle. Moreover, we discover the existence of a threshold for the velocity vmedium of moving media, only above which, namely, vmedium>c/n2, the reversed Cherenkov radiation may emerge, where c is the velocity of light in vacuum. Particularly, we find that the reversed Cherenkov radiation inside superluminal moving media (i.e., vmedium>c/n) can become thresholdless for the velocity of moving charged particles.
{"title":"Reversed Cherenkov radiation via Fizeau–Fresnel drag","authors":"Bowen Zhang, Zheng Gong, Ruoxi Chen, Xuhuinan Chen, Yi Yang, Hongsheng Chen, Ido Kaminer, Xiao Lin","doi":"10.1063/5.0296513","DOIUrl":"https://doi.org/10.1063/5.0296513","url":null,"abstract":"It has long been thought that the reversed Cherenkov radiation is impossible in homogeneous media with a positive refractive index n. Here, we break this long-held belief by revealing the possibility of creating reversed Cherenkov radiation from homogeneous positive-index moving media. The underlying mechanism is essentially related to the Fizeau–Fresnel drag effect, which provides a unique route to drag the emitted light in the direction of the moving medium and thus enables the possibility of dragging the emitted light in the opposite direction of the moving charged particle. Moreover, we discover the existence of a threshold for the velocity vmedium of moving media, only above which, namely, vmedium>c/n2, the reversed Cherenkov radiation may emerge, where c is the velocity of light in vacuum. Particularly, we find that the reversed Cherenkov radiation inside superluminal moving media (i.e., vmedium>c/n) can become thresholdless for the velocity of moving charged particles.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"27 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145759396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hugo Quard, Sébastien Cueff, Hai Son Nguyen, Nicolas Chauvin, Thomas Wood
In recent years, silicon has emerged as a promising platform for quantum photonics, driven by its technological maturity and compatibility with large-scale photonic integration. Among the various approaches to implementing quantum emitters in silicon, color centers have gained significant attention due to their ability to operate as single-photon sources in the near-infrared, making them highly relevant for quantum communication and information processing. However, to fully exploit their potential, efficient integration into silicon photonic structures is essential to enhance photon extraction, control emission properties, and enable scalable architectures. This review provides a comprehensive overview of the progress in integrating color centers into silicon photonic structures. The most promising color centers studied to date are presented, along with the various methods developed for their creation. Strategies for coupling these emitters to photonic structures, such as waveguides and resonant cavities, are examined, highlighting their impact on emission properties, including enhanced radiative rates via the Purcell effect and improved control over emission directivity. Finally, key challenges and future directions are discussed to further advance silicon-based quantum emitters toward practical applications in quantum technologies.
{"title":"Integration of color centers into silicon photonic structures","authors":"Hugo Quard, Sébastien Cueff, Hai Son Nguyen, Nicolas Chauvin, Thomas Wood","doi":"10.1063/5.0258819","DOIUrl":"https://doi.org/10.1063/5.0258819","url":null,"abstract":"In recent years, silicon has emerged as a promising platform for quantum photonics, driven by its technological maturity and compatibility with large-scale photonic integration. Among the various approaches to implementing quantum emitters in silicon, color centers have gained significant attention due to their ability to operate as single-photon sources in the near-infrared, making them highly relevant for quantum communication and information processing. However, to fully exploit their potential, efficient integration into silicon photonic structures is essential to enhance photon extraction, control emission properties, and enable scalable architectures. This review provides a comprehensive overview of the progress in integrating color centers into silicon photonic structures. The most promising color centers studied to date are presented, along with the various methods developed for their creation. Strategies for coupling these emitters to photonic structures, such as waveguides and resonant cavities, are examined, highlighting their impact on emission properties, including enhanced radiative rates via the Purcell effect and improved control over emission directivity. Finally, key challenges and future directions are discussed to further advance silicon-based quantum emitters toward practical applications in quantum technologies.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"184 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Irshad Ahmad, Huan Li, Samia Ben Ahmed, Mohammed T. Alotaibi, Gao Li
Atomically precise metal clusters have gained widespread attention in the rational design of high-performance photocatalysts due to their distinctive characteristics, such as tunable size, elemental composition, and surface chemistry. A promising research avenue involves the anchoring of metal clusters within the porous materials, including metal–organic frameworks (MOFs), covalent organic frameworks (COFs), etc., to construct hybrid composites. Considering the rapid development of metal cluster-anchored porous frameworks as efficient photocatalysts, a comprehensive review is essential to further advance this domain, which begins by outlining the fundamental mechanisms and photocatalytic properties of the selected porous frameworks. We emphasize the synthesis methods used for fabricating cluster-anchored porous frameworks. Subsequently, a detailed classification of metal cluster-anchored porous M/COF composites and the mechanisms responsible for the observed improvements in photocatalytic performance is presented. Finally, this review addresses existing challenges and outlines future research directions, aiming to inspire the development of intelligent cluster@M/COF composites with significantly improved photocatalytic results.
{"title":"Shedding light on unprecedented spatial confinement of metal clusters by metal/covalent organic frameworks for photocatalysis","authors":"Irshad Ahmad, Huan Li, Samia Ben Ahmed, Mohammed T. Alotaibi, Gao Li","doi":"10.1063/5.0285638","DOIUrl":"https://doi.org/10.1063/5.0285638","url":null,"abstract":"Atomically precise metal clusters have gained widespread attention in the rational design of high-performance photocatalysts due to their distinctive characteristics, such as tunable size, elemental composition, and surface chemistry. A promising research avenue involves the anchoring of metal clusters within the porous materials, including metal–organic frameworks (MOFs), covalent organic frameworks (COFs), etc., to construct hybrid composites. Considering the rapid development of metal cluster-anchored porous frameworks as efficient photocatalysts, a comprehensive review is essential to further advance this domain, which begins by outlining the fundamental mechanisms and photocatalytic properties of the selected porous frameworks. We emphasize the synthesis methods used for fabricating cluster-anchored porous frameworks. Subsequently, a detailed classification of metal cluster-anchored porous M/COF composites and the mechanisms responsible for the observed improvements in photocatalytic performance is presented. Finally, this review addresses existing challenges and outlines future research directions, aiming to inspire the development of intelligent cluster@M/COF composites with significantly improved photocatalytic results.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"226 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ali Sheraz, Oleg Korotchenkov, Mohammad Ali Nasiri, Marco Antonio López de la Torre, Andrés Cantarero
The performance and reliability of thermoelectric materials and devices based on low-dimensional materials are strongly influenced by heat dissipation and thermal stability, which are directly linked to the thermal conductivity of the materials. Therefore, accurate determination of the thermal properties remains a critical aspect of material development efforts, which requires the continuous advancement and refinement of the measurement techniques. In recent years, substantial progress has been achieved in theoretical and experimental approaches for the characterization of thermal conductivity in low-dimensional materials. This article reviews these advances, focusing on recent developments in the measurement of thermal conductivity in thin films, two-dimensional materials, and other nanostructures. The fundamental concepts underlying a range of experimental and theoretical techniques are presented together with their theoretical framework, underscoring the critical role of selecting a measurement approach appropriate to the sample thickness, thermal conductivity regime, and material characteristics. Special attention is paid to the thermal conductivity of emerging materials relevant for thermal management, including carbon-based materials, black phosphorus, MXenes, and boron nitride. Furthermore, the advantages and limitations of the different measurement techniques are discussed, in relation to the type and structure of the material under study. Finally, the review summarizes the key findings and outlines future research opportunities, highlighting promising directions across different classes of low-dimensional materials.
{"title":"Thermal conductivity of low-dimensional materials: Recent progress, prospects, and challenges","authors":"Ali Sheraz, Oleg Korotchenkov, Mohammad Ali Nasiri, Marco Antonio López de la Torre, Andrés Cantarero","doi":"10.1063/5.0274620","DOIUrl":"https://doi.org/10.1063/5.0274620","url":null,"abstract":"The performance and reliability of thermoelectric materials and devices based on low-dimensional materials are strongly influenced by heat dissipation and thermal stability, which are directly linked to the thermal conductivity of the materials. Therefore, accurate determination of the thermal properties remains a critical aspect of material development efforts, which requires the continuous advancement and refinement of the measurement techniques. In recent years, substantial progress has been achieved in theoretical and experimental approaches for the characterization of thermal conductivity in low-dimensional materials. This article reviews these advances, focusing on recent developments in the measurement of thermal conductivity in thin films, two-dimensional materials, and other nanostructures. The fundamental concepts underlying a range of experimental and theoretical techniques are presented together with their theoretical framework, underscoring the critical role of selecting a measurement approach appropriate to the sample thickness, thermal conductivity regime, and material characteristics. Special attention is paid to the thermal conductivity of emerging materials relevant for thermal management, including carbon-based materials, black phosphorus, MXenes, and boron nitride. Furthermore, the advantages and limitations of the different measurement techniques are discussed, in relation to the type and structure of the material under study. Finally, the review summarizes the key findings and outlines future research opportunities, highlighting promising directions across different classes of low-dimensional materials.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"62 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The research field of polar topological domains has witnessed rapid expansion in recent years, inspired by the vast application potentials for future topological electronic devices. Nonetheless, such topological devices remain elusive. In this study, we implemented the polar topological domain structures as neuromorphic computing elements, and present 12-state non-volatile ferroelectric topological nanodevices that demonstrate exceptional neuromorphic computing capabilities through the controlled formation and erasure of walls. These nanodevices exhibit near-linear long-term potentiation and long-term depression characteristics under repetitive voltage pulses, achieving a remarkable dynamic range. Simulations using a convolutional neural network model with these devices attain 95% recognition accuracy on the Modified National Institute of Standards and Technology handwritten digits dataset within 100 epochs. These results expand the functional scope of polar topological electronic devices to future neuromorphic computing systems.
{"title":"Construction of polar topological nanodevices for neuromorphic computing","authors":"Guo Tian, Wentao Shuai, Wenjie Li, Zhiqing Song, Jiaqi Zhang, Yihang Guo, Houlin Zhou, Shuoshuo Ma, Jianbiao Xian, Songhua Cai, Zhen Fan, Minghui Qin, Ji-Yan Dai, Jun-Ming Liu, Xingsen Gao","doi":"10.1063/5.0294235","DOIUrl":"https://doi.org/10.1063/5.0294235","url":null,"abstract":"The research field of polar topological domains has witnessed rapid expansion in recent years, inspired by the vast application potentials for future topological electronic devices. Nonetheless, such topological devices remain elusive. In this study, we implemented the polar topological domain structures as neuromorphic computing elements, and present 12-state non-volatile ferroelectric topological nanodevices that demonstrate exceptional neuromorphic computing capabilities through the controlled formation and erasure of walls. These nanodevices exhibit near-linear long-term potentiation and long-term depression characteristics under repetitive voltage pulses, achieving a remarkable dynamic range. Simulations using a convolutional neural network model with these devices attain 95% recognition accuracy on the Modified National Institute of Standards and Technology handwritten digits dataset within 100 epochs. These results expand the functional scope of polar topological electronic devices to future neuromorphic computing systems.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"15 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：