Developing reliable and efficient single-photon sources is crucial for advancing quantum technologies, relying on nonlinear frequency conversion or spontaneous emission from individual quantum emitters. While different types of single-photon sources excel in specific applications, none meet all criteria for an “ideal” source: exceptional brightness, high purity, and indistinguishability. To address this challenge, coupling single-photon emitters with designer nanostructures can significantly enhance emission performance, a pivotal area in quantum nanophotonics. This review summarizes recent advancements over the past decade in generating and manipulating single photons, emphasizing the pivotal role of nanostructure coupling. Single-photon emission systems—such as nonlinear crystals, solid-state defects, quantum dots, carbon nanotubes, and two-dimensional materials—are categorized quantitatively based on their ability to achieve high purity, indistinguishability, and brightness, presented in a three-dimensional technology map. Furthermore, nanostructure engineering is showcased for manipulating properties such as emission direction, polarization, chirality, and entanglement of single photons. By elucidating these critical aspects, this review aims to advance understanding of how advancements in nanostructured environments promise to shape the future of single-photon generation and manipulation within quantum nanophotonics.
{"title":"Single-photon generation and manipulation in quantum nanophotonics","authors":"Guangxin Liu, Wenjie Zhou, Dmitrii Gromyko, Ding Huang, Zhaogang Dong, Renming Liu, Juanfeng Zhu, Jingfeng Liu, Cheng-Wei Qiu, Lin Wu","doi":"10.1063/5.0227350","DOIUrl":"https://doi.org/10.1063/5.0227350","url":null,"abstract":"Developing reliable and efficient single-photon sources is crucial for advancing quantum technologies, relying on nonlinear frequency conversion or spontaneous emission from individual quantum emitters. While different types of single-photon sources excel in specific applications, none meet all criteria for an “ideal” source: exceptional brightness, high purity, and indistinguishability. To address this challenge, coupling single-photon emitters with designer nanostructures can significantly enhance emission performance, a pivotal area in quantum nanophotonics. This review summarizes recent advancements over the past decade in generating and manipulating single photons, emphasizing the pivotal role of nanostructure coupling. Single-photon emission systems—such as nonlinear crystals, solid-state defects, quantum dots, carbon nanotubes, and two-dimensional materials—are categorized quantitatively based on their ability to achieve high purity, indistinguishability, and brightness, presented in a three-dimensional technology map. Furthermore, nanostructure engineering is showcased for manipulating properties such as emission direction, polarization, chirality, and entanglement of single photons. By elucidating these critical aspects, this review aims to advance understanding of how advancements in nanostructured environments promise to shape the future of single-photon generation and manipulation within quantum nanophotonics.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"25 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jiawen Wang, Lihui Huang, Shenghuang Lin, Shiqing Xu, Gongxun Bai
High-performing semiconductor thin films are crucial components in today's electronic age, finding extensive applications in devices and chips. Recently, there has been a significant trend toward incorporating lanthanide elements into these films, primarily driven by the escalating demand for photonic and optoelectronic applications. The featured article presents a detailed overview of the latest research advancements in lanthanide-doped semiconductor thin films tailored for photonic and optoelectronic uses. This comprehensive review encompasses the principles, design considerations, fabrication methods, and characterization techniques involved in creating these doped films. The semiconductors discuss span a range of materials, including wide bandgap semiconductors, perovskites, two-dimensional materials, piezoelectric materials, and organic materials. The article further explores the photonic and optoelectronic applications of these doped films. Finally, it delves into the current challenges, potential solutions, future prospects, and research gaps that need to be addressed in this exciting field.
{"title":"Lanthanide doped semiconductor thin films for photonic and optoelectronic applications","authors":"Jiawen Wang, Lihui Huang, Shenghuang Lin, Shiqing Xu, Gongxun Bai","doi":"10.1063/5.0220910","DOIUrl":"https://doi.org/10.1063/5.0220910","url":null,"abstract":"High-performing semiconductor thin films are crucial components in today's electronic age, finding extensive applications in devices and chips. Recently, there has been a significant trend toward incorporating lanthanide elements into these films, primarily driven by the escalating demand for photonic and optoelectronic applications. The featured article presents a detailed overview of the latest research advancements in lanthanide-doped semiconductor thin films tailored for photonic and optoelectronic uses. This comprehensive review encompasses the principles, design considerations, fabrication methods, and characterization techniques involved in creating these doped films. The semiconductors discuss span a range of materials, including wide bandgap semiconductors, perovskites, two-dimensional materials, piezoelectric materials, and organic materials. The article further explores the photonic and optoelectronic applications of these doped films. Finally, it delves into the current challenges, potential solutions, future prospects, and research gaps that need to be addressed in this exciting field.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"30 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Liu Yang, Jialu Tian, Yulong Ding, Avinash Alagumalai, Fatih Selimefendigil, Mortaza Aghbashlo, Meisam Tabatabaei, L. Godson Asirvatham, Somchai Wongwises, S. A. Sherif, Efstathios E. Michaelides, Christos N. Markides, Omid Mahian
Phase transitions are fundamental phenomena in physics that have been extensively studied owing to their applications across diverse industrial sectors, including energy, power, healthcare, and the environment. An example of such applications in the energy sector is thermal energy storage using phase change materials. In such systems, and indeed in many other thermal systems, an emerging and promising approach involves the use of nanoparticles, which have been extensively studied for their potential to enhance the performance of thermal systems. However, conducting thermodynamic analyses of thermal systems in the presence of nanoparticles proves to be complex and resource-consuming because of the involvement of many parameters, including (i) temperature, molecular structure, and composition of the host fluid in which nanoparticles are either dispersed or in physical contact; (ii) nanoparticle morphology, size, type, and concentration; and (iii) complex interactions between the nanoparticles and the base fluid. This article reviews recent studies on the role of nanoparticles in phase transition processes such as freezing, melting, boiling, evaporation, and condensation. It begins with an overview of phase transition phenomena without nanoparticles, emphasizing the most important controlling parameters, and then examines the underlying physics of nanoparticle-involved phase transitions, critically examining their impact on process speed (transport rates). The article also explores physical phenomena, such as Brownian motion, thermophoresis, microconvection, and nanoparticle agglomeration, and considers their contribution to rate control (enhancement or reduction). Finally, the article presents challenges, research gaps, and suggestions for future exploration, aimed at offering a comprehensive understanding of the complex interplay between the presence of nanoparticles and the phase transition processes.
{"title":"The physics of phase transition phenomena enhanced by nanoparticles","authors":"Liu Yang, Jialu Tian, Yulong Ding, Avinash Alagumalai, Fatih Selimefendigil, Mortaza Aghbashlo, Meisam Tabatabaei, L. Godson Asirvatham, Somchai Wongwises, S. A. Sherif, Efstathios E. Michaelides, Christos N. Markides, Omid Mahian","doi":"10.1063/5.0200714","DOIUrl":"https://doi.org/10.1063/5.0200714","url":null,"abstract":"Phase transitions are fundamental phenomena in physics that have been extensively studied owing to their applications across diverse industrial sectors, including energy, power, healthcare, and the environment. An example of such applications in the energy sector is thermal energy storage using phase change materials. In such systems, and indeed in many other thermal systems, an emerging and promising approach involves the use of nanoparticles, which have been extensively studied for their potential to enhance the performance of thermal systems. However, conducting thermodynamic analyses of thermal systems in the presence of nanoparticles proves to be complex and resource-consuming because of the involvement of many parameters, including (i) temperature, molecular structure, and composition of the host fluid in which nanoparticles are either dispersed or in physical contact; (ii) nanoparticle morphology, size, type, and concentration; and (iii) complex interactions between the nanoparticles and the base fluid. This article reviews recent studies on the role of nanoparticles in phase transition processes such as freezing, melting, boiling, evaporation, and condensation. It begins with an overview of phase transition phenomena without nanoparticles, emphasizing the most important controlling parameters, and then examines the underlying physics of nanoparticle-involved phase transitions, critically examining their impact on process speed (transport rates). The article also explores physical phenomena, such as Brownian motion, thermophoresis, microconvection, and nanoparticle agglomeration, and considers their contribution to rate control (enhancement or reduction). Finally, the article presents challenges, research gaps, and suggestions for future exploration, aimed at offering a comprehensive understanding of the complex interplay between the presence of nanoparticles and the phase transition processes.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"239 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Renfu Zhang, Menghan Yin, Peipei Shao, Qingjiao Huang, Gunnar A. Niklasson, Rui-Tao Wen
Electrochromic oxides have tremendous potential applications in smart windows, displays, and camouflage due to their capability for selective modulation of visible and near-infrared optical spectra. Although these applications are dependent on the optical performance, the origin of the optical absorption in electrochromic oxides is not clear. Here, we demonstrate that the electrochromism of all amorphous cathodic electrochromic oxides can be described by a combination of polaron and bipolaron hopping. Based on the valences of the metallic constituents, we model experimental optical absorption spectra by polaron theory and assign two prominent absorption peaks to polaronic and bipolaronic charge transfer excitations. However, in the special case of V2O5, three peaks were necessary to fit the optical spectra. The activation energies of polaronic and bipolaronic hopping were remarkably similar for all the cathodic oxides studied. Within the framework of polaron absorption, V2O5 would be categorized as a cathodic oxide, rather than as a mixed anodic/cathodic material as in the conventional picture. We emphasize that our findings here not only offer a profound understanding of all amorphous cathodic electrochromic oxides but also pave the way for exploring electrochromic oxides with dual-band modulations.
{"title":"Polaron hopping induced dual-band absorption in all amorphous cathodic electrochromic oxides","authors":"Renfu Zhang, Menghan Yin, Peipei Shao, Qingjiao Huang, Gunnar A. Niklasson, Rui-Tao Wen","doi":"10.1063/5.0244549","DOIUrl":"https://doi.org/10.1063/5.0244549","url":null,"abstract":"Electrochromic oxides have tremendous potential applications in smart windows, displays, and camouflage due to their capability for selective modulation of visible and near-infrared optical spectra. Although these applications are dependent on the optical performance, the origin of the optical absorption in electrochromic oxides is not clear. Here, we demonstrate that the electrochromism of all amorphous cathodic electrochromic oxides can be described by a combination of polaron and bipolaron hopping. Based on the valences of the metallic constituents, we model experimental optical absorption spectra by polaron theory and assign two prominent absorption peaks to polaronic and bipolaronic charge transfer excitations. However, in the special case of V2O5, three peaks were necessary to fit the optical spectra. The activation energies of polaronic and bipolaronic hopping were remarkably similar for all the cathodic oxides studied. Within the framework of polaron absorption, V2O5 would be categorized as a cathodic oxide, rather than as a mixed anodic/cathodic material as in the conventional picture. We emphasize that our findings here not only offer a profound understanding of all amorphous cathodic electrochromic oxides but also pave the way for exploring electrochromic oxides with dual-band modulations.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"32 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In response to the challenges posed by traditional computing architectures in handling big data and AI demands, neuromorphic computing has emerged as a promising alternative inspired by the brain's efficiency. This study focuses on three-terminal synaptic transistors utilizing graphene and P(VDF-TrFE) to achieve dynamic reconfigurability between excitatory and inhibitory response modes, which are crucial for mimicking biological functions. The devices operate by applying different top gate spikes (±25 V and ±10 V) to modulate the polarization degree of P(VDF-TrFE), thereby regulating the carrier type and concentration in the graphene channel. This results in the effective realization of enhancement and inhibition processes in two neural-like states: excitatory and inhibitory modes, accompanied by good neural plasticity with paired-pulse facilitation and spike-time-dependent plasticity. With these features, the synaptic devices achieve brain-like memory enhancement and human-like perception functions, exhibiting excellent stability, durability over 1000 cycles, and a long retention period exceeding 10 years. Additionally, the performance of the artificial neural network is evaluated for handwritten digit recognition, achieving a high recognition accuracy of 92.28%. Our study showcases the development of highly stable, dynamically reconfigurable artificial synaptic transistors capable of emulating complex neural functions, providing a foundation for emerging neuromorphic computing systems and AI technologies.
{"title":"High-stable multifunctional dynamically reconfigurable artificial synapses based on hybrid graphene/ferroelectric field-effect transistors","authors":"Liang Liu, Xutao Zhang, Ruijuan Tian, Qiao Zhang, Mingwen Zhang, Yu Zhang, Xuetao Gan","doi":"10.1063/5.0235614","DOIUrl":"https://doi.org/10.1063/5.0235614","url":null,"abstract":"In response to the challenges posed by traditional computing architectures in handling big data and AI demands, neuromorphic computing has emerged as a promising alternative inspired by the brain's efficiency. This study focuses on three-terminal synaptic transistors utilizing graphene and P(VDF-TrFE) to achieve dynamic reconfigurability between excitatory and inhibitory response modes, which are crucial for mimicking biological functions. The devices operate by applying different top gate spikes (±25 V and ±10 V) to modulate the polarization degree of P(VDF-TrFE), thereby regulating the carrier type and concentration in the graphene channel. This results in the effective realization of enhancement and inhibition processes in two neural-like states: excitatory and inhibitory modes, accompanied by good neural plasticity with paired-pulse facilitation and spike-time-dependent plasticity. With these features, the synaptic devices achieve brain-like memory enhancement and human-like perception functions, exhibiting excellent stability, durability over 1000 cycles, and a long retention period exceeding 10 years. Additionally, the performance of the artificial neural network is evaluated for handwritten digit recognition, achieving a high recognition accuracy of 92.28%. Our study showcases the development of highly stable, dynamically reconfigurable artificial synaptic transistors capable of emulating complex neural functions, providing a foundation for emerging neuromorphic computing systems and AI technologies.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"50 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143020777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Md Mazharul Islam, Shamiul Alam, Md Rahatul Islam Udoy, Md Shafayat Hossain, Kathleen E Hamilton, Ahmedullah Aziz
Two-dimensional materials with multiple degrees of freedom, including spin, valleys, and orbitals, open up an exciting avenue for engineering multifunctional devices. Beyond spintronics, these degrees of freedom can lead to novel quantum effects such as valley-dependent Hall effects and orbital magnetism, which could revolutionize next-generation electronics. However, achieving independent control over valley polarization and orbital magnetism has been a challenge due to the need for large electric fields. A recent breakthrough involving pentalayer rhombohedral graphene has demonstrated the ability to individually manipulate anomalous Hall signals and orbital magnetic hysteresis, forming what is known as a valley-magnetic quartet. Here, we leverage the electrically tunable ferro-valleytricity of pentalayer rhombohedral graphene to develop nonvolatile memory and in-memory computation applications. We propose an architecture for a dense, scalable, and selector-less nonvolatile memory array that harnesses the electrically tunable ferro-valleytricity. In our designed array architecture, nondestructive read and write operations are conducted by sensing the valley state through two different pairs of terminals, allowing for independent optimization of read/write peripheral circuits. The power consumption of our PRG-based array is remarkably low, with only ∼6 nW required per write operation and ∼2.3 nW per read operation per cell. This consumption is orders of magnitude lower than that of the majority of state-of-the-art cryogenic memories. Additionally, we engineer in-memory computation by implementing majority logic operations within our proposed nonvolatile memory array without modifying the peripheral circuitry. Our framework presents a promising pathway toward achieving ultra-dense cryogenic memory and in-memory computation capabilities.
{"title":"Harnessing ferro-valleytricity in pentalayer rhombohedral graphene for memory and compute","authors":"Md Mazharul Islam, Shamiul Alam, Md Rahatul Islam Udoy, Md Shafayat Hossain, Kathleen E Hamilton, Ahmedullah Aziz","doi":"10.1063/5.0231749","DOIUrl":"https://doi.org/10.1063/5.0231749","url":null,"abstract":"Two-dimensional materials with multiple degrees of freedom, including spin, valleys, and orbitals, open up an exciting avenue for engineering multifunctional devices. Beyond spintronics, these degrees of freedom can lead to novel quantum effects such as valley-dependent Hall effects and orbital magnetism, which could revolutionize next-generation electronics. However, achieving independent control over valley polarization and orbital magnetism has been a challenge due to the need for large electric fields. A recent breakthrough involving pentalayer rhombohedral graphene has demonstrated the ability to individually manipulate anomalous Hall signals and orbital magnetic hysteresis, forming what is known as a valley-magnetic quartet. Here, we leverage the electrically tunable ferro-valleytricity of pentalayer rhombohedral graphene to develop nonvolatile memory and in-memory computation applications. We propose an architecture for a dense, scalable, and selector-less nonvolatile memory array that harnesses the electrically tunable ferro-valleytricity. In our designed array architecture, nondestructive read and write operations are conducted by sensing the valley state through two different pairs of terminals, allowing for independent optimization of read/write peripheral circuits. The power consumption of our PRG-based array is remarkably low, with only ∼6 nW required per write operation and ∼2.3 nW per read operation per cell. This consumption is orders of magnitude lower than that of the majority of state-of-the-art cryogenic memories. Additionally, we engineer in-memory computation by implementing majority logic operations within our proposed nonvolatile memory array without modifying the peripheral circuitry. Our framework presents a promising pathway toward achieving ultra-dense cryogenic memory and in-memory computation capabilities.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"48 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143020498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiongfang Liu, Tong Yang, Shanquan Chen, Jing Wu, Chi Sin Tang, Yuanjie Ning, Zuhuang Chen, Liang Dai, Mengxia Sun, Mingyao Chen, Kun Han, Difan Zhou, Shengwei Zeng, Shuo Sun, Sensen Li, Ming Yang, Mark B. H. Breese, Chuanbing Cai, Thirumalai Venkatesan, Andrew T. S. Wee, Xinmao Yin
Researchers pursuing advanced photoelectric devices have discovered near room-temperature metal–insulator transitions (MIT) in nonvolatile VO2. Despite theoretical investigations suggesting that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic ellipsometry measurements and first-principles calculations. We illustrate the complementary role of polaron dynamics in facilitating Peierls and Mott transitions, thereby contributing to the MIT processes. Furthermore, our observations and characterizations of conventional metallic and correlated plasmons in the respective phases of the VO2 film offer valuable insight into their electron structures. This investigation enhances comprehension of the MIT mechanism in correlated systems and underscores the roles of polarons, lattice distortions, and electron correlations in facilitating phase transition processes in strongly correlated systems. Additionally, the detailed detection of small polarons and plasmons serves as inspiration for the development of new device functionalities.
{"title":"Small polarons mediated near-room-temperature metal–insulator transition in vanadium dioxide and their hopping dynamics","authors":"Xiongfang Liu, Tong Yang, Shanquan Chen, Jing Wu, Chi Sin Tang, Yuanjie Ning, Zuhuang Chen, Liang Dai, Mengxia Sun, Mingyao Chen, Kun Han, Difan Zhou, Shengwei Zeng, Shuo Sun, Sensen Li, Ming Yang, Mark B. H. Breese, Chuanbing Cai, Thirumalai Venkatesan, Andrew T. S. Wee, Xinmao Yin","doi":"10.1063/5.0236807","DOIUrl":"https://doi.org/10.1063/5.0236807","url":null,"abstract":"Researchers pursuing advanced photoelectric devices have discovered near room-temperature metal–insulator transitions (MIT) in nonvolatile VO2. Despite theoretical investigations suggesting that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic ellipsometry measurements and first-principles calculations. We illustrate the complementary role of polaron dynamics in facilitating Peierls and Mott transitions, thereby contributing to the MIT processes. Furthermore, our observations and characterizations of conventional metallic and correlated plasmons in the respective phases of the VO2 film offer valuable insight into their electron structures. This investigation enhances comprehension of the MIT mechanism in correlated systems and underscores the roles of polarons, lattice distortions, and electron correlations in facilitating phase transition processes in strongly correlated systems. Additionally, the detailed detection of small polarons and plasmons serves as inspiration for the development of new device functionalities.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"45 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sibilla Orsini, Marco Lauricella, Andrea Montessori, Adriano Tiribocchi, Mihir Durve, Sauro Succi, Luana Persano, Andrea Camposeo, Dario Pisignano
Droplet microfluidics has emerged as highly relevant technology in diverse fields such as nanomaterials synthesis, photonics, drug delivery, regenerative medicine, food science, cosmetics, and agriculture. While significant progress has been made in understanding the fundamental mechanisms underlying droplet generation in microchannels and in fabricating devices to produce droplets with varied functionality and high throughput, challenges persist along two important directions. On one side, the generalization of numerical results obtained by computational fluid dynamics would be important to deepen the comprehension of complex physical phenomena in droplet microfluidics, as well as the capability of predicting the device behavior. Conversely, truly three-dimensional architectures would enhance microfluidic platforms in terms of tailoring and enhancing droplet and flow properties. Recent advancements in artificial intelligence (AI) and additive manufacturing (AM) promise unequaled opportunities for simulating fluid behavior, precisely tracking individual droplets, and exploring innovative device designs. This review provides a comprehensive overview of recent progress in applying AI and AM to droplet microfluidics. The basic physical properties of multiphase flows and mechanisms for droplet production are discussed, and the current fabrication methods of related devices are introduced, together with their applications. Delving into the use of AI and AM technologies in droplet microfluidics, topics covered include AI-assisted simulations of droplet behavior, real-time tracking of droplets within microfluidic systems, and AM-fabrication of three-dimensional systems. The synergistic combination of AI and AM is expected to deepen the understanding of complex fluid dynamics and active matter behavior, expediting the transition toward fully digital microfluidic systems.
{"title":"3D printing and artificial intelligence tools for droplet microfluidics: Advances in the generation and analysis of emulsions","authors":"Sibilla Orsini, Marco Lauricella, Andrea Montessori, Adriano Tiribocchi, Mihir Durve, Sauro Succi, Luana Persano, Andrea Camposeo, Dario Pisignano","doi":"10.1063/5.0228610","DOIUrl":"https://doi.org/10.1063/5.0228610","url":null,"abstract":"Droplet microfluidics has emerged as highly relevant technology in diverse fields such as nanomaterials synthesis, photonics, drug delivery, regenerative medicine, food science, cosmetics, and agriculture. While significant progress has been made in understanding the fundamental mechanisms underlying droplet generation in microchannels and in fabricating devices to produce droplets with varied functionality and high throughput, challenges persist along two important directions. On one side, the generalization of numerical results obtained by computational fluid dynamics would be important to deepen the comprehension of complex physical phenomena in droplet microfluidics, as well as the capability of predicting the device behavior. Conversely, truly three-dimensional architectures would enhance microfluidic platforms in terms of tailoring and enhancing droplet and flow properties. Recent advancements in artificial intelligence (AI) and additive manufacturing (AM) promise unequaled opportunities for simulating fluid behavior, precisely tracking individual droplets, and exploring innovative device designs. This review provides a comprehensive overview of recent progress in applying AI and AM to droplet microfluidics. The basic physical properties of multiphase flows and mechanisms for droplet production are discussed, and the current fabrication methods of related devices are introduced, together with their applications. Delving into the use of AI and AM technologies in droplet microfluidics, topics covered include AI-assisted simulations of droplet behavior, real-time tracking of droplets within microfluidic systems, and AM-fabrication of three-dimensional systems. The synergistic combination of AI and AM is expected to deepen the understanding of complex fluid dynamics and active matter behavior, expediting the transition toward fully digital microfluidic systems.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"28 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142991882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Electrokinetic energy harvesting (EKEH) has emerged as a promising renewable and carbon-neutral energy source for small and large-scale applications, reducing the reliance on conventional fossil fuels and providing innovative solutions for remote, off-grid applications. The underlying mechanism of EKEH relies on the movement of dissolved electrolytes over charged fluid–solid interfaces through confinements resulting in the generation of useful power. The low energy conversion efficiency typically observed in larger (micrometer) confinements can be substantially mitigated by shifting to nanometer and sub-nanometer regimes. This down-scaling unlocks high selectivity and provides unique opportunities to potentially harness Angstrom-scale interactions to maintain and elevate fluid permeability. However, EKEH at sub-nanometric scales remains fraught with considerable challenges in fabrication, economic viability, scaling of power, and maintenance, significantly impeding its advancement. In this review, we detail the electrokinetic processes that drive energy conversion in the presence of pressure, concentration, and temperature gradients. We examine the key factors affecting conversion efficiency and explore the innovative solutions in the recent literature addressing associated challenges. Additionally, we highlight the role of novel nanomaterials and specialized geometries along with new fabrication techniques that enable high permeation without sacrificing selectivity in nanometer and sub-nanometer confinements. Finally, we delve into the major obstacles that EKEH currently faces to reach its full potential of extracting clean and affordable energy and conclude by offering insight into future developmental directions and potential breakthroughs in this rapidly evolving field.
{"title":"Electrokinetic energy harvesting over nanometer and sub-nanometer scales","authors":"Suman Chakraborty, Chirodeep Bakli, Debmalya Roy, Abhirup Chaudhuri, Aniruddha Guha, Aditya Patwari","doi":"10.1063/5.0241150","DOIUrl":"https://doi.org/10.1063/5.0241150","url":null,"abstract":"Electrokinetic energy harvesting (EKEH) has emerged as a promising renewable and carbon-neutral energy source for small and large-scale applications, reducing the reliance on conventional fossil fuels and providing innovative solutions for remote, off-grid applications. The underlying mechanism of EKEH relies on the movement of dissolved electrolytes over charged fluid–solid interfaces through confinements resulting in the generation of useful power. The low energy conversion efficiency typically observed in larger (micrometer) confinements can be substantially mitigated by shifting to nanometer and sub-nanometer regimes. This down-scaling unlocks high selectivity and provides unique opportunities to potentially harness Angstrom-scale interactions to maintain and elevate fluid permeability. However, EKEH at sub-nanometric scales remains fraught with considerable challenges in fabrication, economic viability, scaling of power, and maintenance, significantly impeding its advancement. In this review, we detail the electrokinetic processes that drive energy conversion in the presence of pressure, concentration, and temperature gradients. We examine the key factors affecting conversion efficiency and explore the innovative solutions in the recent literature addressing associated challenges. Additionally, we highlight the role of novel nanomaterials and specialized geometries along with new fabrication techniques that enable high permeation without sacrificing selectivity in nanometer and sub-nanometer confinements. Finally, we delve into the major obstacles that EKEH currently faces to reach its full potential of extracting clean and affordable energy and conclude by offering insight into future developmental directions and potential breakthroughs in this rapidly evolving field.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"70 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142989026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nominally pure silica or amorphous SiO2 is an important material in modern electronics, as well as other fields of science. Normally, it has been utilized for its insulation properties, for example, in metal-oxide-semiconductor devices. However, it also can be considered as a wide bandgap semiconductor possessing very large electrical resistivity. The conductivity of various silica films has been studied since the mid-nineteenth century, usually assuming the presence of ionic conductivity. However, in the sense of a wide bandgap semiconductor, the temperature dependence of the resistivity, which ranges over more than four orders of magnitude, can be accurately explained by normal semiconductor behavior under the presumed presence of a deep electron trap/donor residing ∼2.3 eV below the conduction band edge. That is, the conductance is determined by electron motion and not by ions. Experiments have studied the transport of injected electrons (and holes) which are consistent with this viewpoint.
{"title":"Physical and electrical properties of silica","authors":"D. K. Ferry, D. L. Rode","doi":"10.1063/5.0233576","DOIUrl":"https://doi.org/10.1063/5.0233576","url":null,"abstract":"Nominally pure silica or amorphous SiO2 is an important material in modern electronics, as well as other fields of science. Normally, it has been utilized for its insulation properties, for example, in metal-oxide-semiconductor devices. However, it also can be considered as a wide bandgap semiconductor possessing very large electrical resistivity. The conductivity of various silica films has been studied since the mid-nineteenth century, usually assuming the presence of ionic conductivity. However, in the sense of a wide bandgap semiconductor, the temperature dependence of the resistivity, which ranges over more than four orders of magnitude, can be accurately explained by normal semiconductor behavior under the presumed presence of a deep electron trap/donor residing ∼2.3 eV below the conduction band edge. That is, the conductance is determined by electron motion and not by ions. Experiments have studied the transport of injected electrons (and holes) which are consistent with this viewpoint.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"53 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142986091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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