Do Wan Kim, Seokho Kim, Jinho Choi, Jaehyun Lee, Yongmin Baek, Kyusang Lee, Dong Hyuk Park, Jongchan Kim
As the demand for high bandwidth and long-distance data transmission escalates in modern computing, optical interconnects via waveguides have attracted significant attention. While conventional inorganic materials-based waveguide necessitates complex components such as grating couplers and optical amplifiers, organic semiconductor-based waveguides offer simplified systems with unique functionalities stemming from their inherent radiative properties that facilitate efficient light–matter interactions, such as exciton–polariton formation and Förster resonance energy transfer. These interactions enable active light modulation, encompassing intensity control, wavelength shift, exciton–polariton lasing, and nonlinear optical effects. Moreover, their optical properties and structural geometries can be precisely tuned through molecular design and controlled synthesis techniques. As a result, organic waveguides have been explored for a range of applications including optical-logic operations, bio-chemical sensing, and advanced photonic integration systems. In this review, we delineate the fundamental principles of organic semiconductor waveguides, as well as their fabrication and potential impact on various photonic applications.
{"title":"Organic active waveguides","authors":"Do Wan Kim, Seokho Kim, Jinho Choi, Jaehyun Lee, Yongmin Baek, Kyusang Lee, Dong Hyuk Park, Jongchan Kim","doi":"10.1063/5.0276463","DOIUrl":"https://doi.org/10.1063/5.0276463","url":null,"abstract":"As the demand for high bandwidth and long-distance data transmission escalates in modern computing, optical interconnects via waveguides have attracted significant attention. While conventional inorganic materials-based waveguide necessitates complex components such as grating couplers and optical amplifiers, organic semiconductor-based waveguides offer simplified systems with unique functionalities stemming from their inherent radiative properties that facilitate efficient light–matter interactions, such as exciton–polariton formation and Förster resonance energy transfer. These interactions enable active light modulation, encompassing intensity control, wavelength shift, exciton–polariton lasing, and nonlinear optical effects. Moreover, their optical properties and structural geometries can be precisely tuned through molecular design and controlled synthesis techniques. As a result, organic waveguides have been explored for a range of applications including optical-logic operations, bio-chemical sensing, and advanced photonic integration systems. In this review, we delineate the fundamental principles of organic semiconductor waveguides, as well as their fabrication and potential impact on various photonic applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"6 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145593413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Stimulating cortical neurons through multisensory inputs or deep brain neurons via invasive electrodes has been found to alleviate the pathology and behavioral symptoms of Alzheimer's disease (AD). The activation of neuronal firing helps to initiate the neuronal repair process and improve memory and synaptic growth. In this study, we report an optical noninvasive method, termed individual-neuron optical brain stimulation (iOBS), to stimulate individual neurons in the cortex using a tightly focused femtosecond laser that transiently scans in a microdomain of each targeted neuron for a flash by two-photon excitation of the intrinsic flavin there. The stimulation activates intense Ca2+ activities of neurons at layer 5/6 in the brain cortex. We demonstrate that iOBS works effectively in the AD mouse model. By performing iOBS in ∼60 randomly selected individual neurons in the visual cortex for a single time, the behavioral symptoms of AD mice are significantly alleviated via the initiation of the neuronal repair process. This method provides a direct and noninvasive method of brain stimulation with promising potential for AD treatment.
{"title":"Individual-neuron optical brain stimulation (iOBS) alleviates behaviors in an Alzheimer's disease mouse model","authors":"Fei Chen, Haipeng Wang, Hao He","doi":"10.1063/5.0297319","DOIUrl":"https://doi.org/10.1063/5.0297319","url":null,"abstract":"Stimulating cortical neurons through multisensory inputs or deep brain neurons via invasive electrodes has been found to alleviate the pathology and behavioral symptoms of Alzheimer's disease (AD). The activation of neuronal firing helps to initiate the neuronal repair process and improve memory and synaptic growth. In this study, we report an optical noninvasive method, termed individual-neuron optical brain stimulation (iOBS), to stimulate individual neurons in the cortex using a tightly focused femtosecond laser that transiently scans in a microdomain of each targeted neuron for a flash by two-photon excitation of the intrinsic flavin there. The stimulation activates intense Ca2+ activities of neurons at layer 5/6 in the brain cortex. We demonstrate that iOBS works effectively in the AD mouse model. By performing iOBS in ∼60 randomly selected individual neurons in the visual cortex for a single time, the behavioral symptoms of AD mice are significantly alleviated via the initiation of the neuronal repair process. This method provides a direct and noninvasive method of brain stimulation with promising potential for AD treatment.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"112 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145582938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. M. Beltukov, A. V. Rodina, A. Alekseev, Al. L. Efros
Discontinuity of dielectric constants at the interface is a common feature of all nanostructures and semiconductor heterostructures. Near such interfaces, a charged particle creates a singular self-interaction potential which may be attributed to interaction with fictitious mirror charges. The singularity of this interaction at the interface presents an obstruction to a perturbative approach. In several limiting cases, this problem can be avoided by zeroing out the carrier wave function at the interface. In this paper, we have developed a non-perturbative theory, which gives a self-consistent description of carrier propagation through an interface with a dielectric discontinuity. It is based on conservation of the current density propagating through the interface, and it is formulated in terms of general boundary conditions (GBCs) for the wave function at the interface with a single phenomenological parameter W. For these GBCs, we find exact solutions of the Schrödinger equation near the interface and the carrier energy spectrum including resonances. Using these results, we describe the photo effect at the semiconductor/vacuum interface and the energy spectrum of quantum wells at the interface with the vacuum or a high-k dielectric. For a surface of liquid helium, we estimate the parameter W and match the resulting electron spectrum with the existing experimental data and theoretical analysis.
{"title":"Non-perturbative macroscopic theory of interfaces with discontinuous dielectric constant","authors":"Y. M. Beltukov, A. V. Rodina, A. Alekseev, Al. L. Efros","doi":"10.1063/5.0282177","DOIUrl":"https://doi.org/10.1063/5.0282177","url":null,"abstract":"Discontinuity of dielectric constants at the interface is a common feature of all nanostructures and semiconductor heterostructures. Near such interfaces, a charged particle creates a singular self-interaction potential which may be attributed to interaction with fictitious mirror charges. The singularity of this interaction at the interface presents an obstruction to a perturbative approach. In several limiting cases, this problem can be avoided by zeroing out the carrier wave function at the interface. In this paper, we have developed a non-perturbative theory, which gives a self-consistent description of carrier propagation through an interface with a dielectric discontinuity. It is based on conservation of the current density propagating through the interface, and it is formulated in terms of general boundary conditions (GBCs) for the wave function at the interface with a single phenomenological parameter W. For these GBCs, we find exact solutions of the Schrödinger equation near the interface and the carrier energy spectrum including resonances. Using these results, we describe the photo effect at the semiconductor/vacuum interface and the energy spectrum of quantum wells at the interface with the vacuum or a high-k dielectric. For a surface of liquid helium, we estimate the parameter W and match the resulting electron spectrum with the existing experimental data and theoretical analysis.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"9 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145582892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Linglong Zhang, Jian Kang, Xueqian Sun, Shunshun Yang, Yichun Cui, Han Yan, Rui Fang, Jiajie Pei, Jiong Yang, Haizeng Song, Ming Tian, Neng Wan, Hucheng Song, Fei Zhou, Youwen Liu, Yi Shi, Yuerui Lu
Förster resonance energy transfer (FRET) delivers energy from a donor to an acceptor through near-field dipole–dipole couplings. Engineering FRET is crucial for the development of high-performance polaritonic light sources, innovative optoelectronic logic computing circuits, and the exploration of exciton dynamics. However, direct manipulation of FRET in organic–inorganic heterostructures remains challenging due to factors such as bulk size, excessive disorders, uncontrollable packing modes of organic counterparts, and ultrafast charge transfers. Here, we modify FRET in heterostructures comprising WS2 (acceptor) and highly crystalline wetting-layer pentacene (WL PEN: donor). This non-conductive WL PEN effectively suppresses interlayer charge transfers. By utilizing an electrostatic gate, the maximum FRET enhancement factor (η) reaches ∼56.2, corresponding to a record exciton diffusion coefficient of ∼223.3 cm2/s. They are ascribed to enhanced excitonic absorption of WS2. Additionally, temperature significantly influences FRET, primarily due to changes in exciton population of pentacene at high momenta. Furthermore, we demonstrate a simple multimode optoelectronic logic gate (OELG) on this heterostructure by modulating FRET. Our findings facilitate the understanding of enhanced light–matter interactions and open a new avenue to design out-performing and multifunctional optoelectronic devices and new optoelectronic computing circuits.
{"title":"Highly tunable Förster resonance energy transfer across atomically thin organic–inorganic interfaces","authors":"Linglong Zhang, Jian Kang, Xueqian Sun, Shunshun Yang, Yichun Cui, Han Yan, Rui Fang, Jiajie Pei, Jiong Yang, Haizeng Song, Ming Tian, Neng Wan, Hucheng Song, Fei Zhou, Youwen Liu, Yi Shi, Yuerui Lu","doi":"10.1063/5.0268381","DOIUrl":"https://doi.org/10.1063/5.0268381","url":null,"abstract":"Förster resonance energy transfer (FRET) delivers energy from a donor to an acceptor through near-field dipole–dipole couplings. Engineering FRET is crucial for the development of high-performance polaritonic light sources, innovative optoelectronic logic computing circuits, and the exploration of exciton dynamics. However, direct manipulation of FRET in organic–inorganic heterostructures remains challenging due to factors such as bulk size, excessive disorders, uncontrollable packing modes of organic counterparts, and ultrafast charge transfers. Here, we modify FRET in heterostructures comprising WS2 (acceptor) and highly crystalline wetting-layer pentacene (WL PEN: donor). This non-conductive WL PEN effectively suppresses interlayer charge transfers. By utilizing an electrostatic gate, the maximum FRET enhancement factor (η) reaches ∼56.2, corresponding to a record exciton diffusion coefficient of ∼223.3 cm2/s. They are ascribed to enhanced excitonic absorption of WS2. Additionally, temperature significantly influences FRET, primarily due to changes in exciton population of pentacene at high momenta. Furthermore, we demonstrate a simple multimode optoelectronic logic gate (OELG) on this heterostructure by modulating FRET. Our findings facilitate the understanding of enhanced light–matter interactions and open a new avenue to design out-performing and multifunctional optoelectronic devices and new optoelectronic computing circuits.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"34 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145582891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study establishes an explicit photoresponse theory for polycrystalline nanowire photoconductors, addressing the gap in understanding gain mechanisms in scalable polycrystalline systems. Traditional photoconductive gain models assume uniform carrier distribution and equal electron–hole contributions, which fail to account for grain boundary effects in polycrystalline materials. The proposed theory introduces the photogating effect as the origin of high gain, where light-induced photovoltage modulates conduction barriers at grain boundaries. Experimental validation utilized silicon nanowires with multiple transparent ITO gates to mimic grain boundary potential barriers. Photoresponse measurements under varying gate voltages and light intensities (532 nm LED) demonstrated excellent agreement with derived analytical equations, enabling the extraction of critical parameters such as minority carrier recombination lifetime (τ0) and critical light intensity. Silvaco TCAD simulations further corroborated the theory, showing barrier height and number-dependent photocurrent trends consistent with experiments. Additionally, polycrystalline ZnO thin-film devices and literature data from other polycrystalline systems were successfully fitted to the model, confirming its universality. This work provides a unified framework for optimizing responsivity and bandwidth in low-dimensional photodetectors, bridging theoretical insights with practical applications in next-generation optoelectronics.
{"title":"Explicit photogain principle for polycrystalline nanowire photoconductors","authors":"Shuwen Guo, Huan Liu, Wenyu Zhang, Kai Li, Abdelmadjid Melsi, Huayou Liu, Yinchu Shen, Yumeng Liu, Jiajun Shen, Xiaokun Gu, Wei Yu, Xiaochuan Guo, Wenbo Peng, Yongning He, Yaping Dan","doi":"10.1063/5.0282633","DOIUrl":"https://doi.org/10.1063/5.0282633","url":null,"abstract":"This study establishes an explicit photoresponse theory for polycrystalline nanowire photoconductors, addressing the gap in understanding gain mechanisms in scalable polycrystalline systems. Traditional photoconductive gain models assume uniform carrier distribution and equal electron–hole contributions, which fail to account for grain boundary effects in polycrystalline materials. The proposed theory introduces the photogating effect as the origin of high gain, where light-induced photovoltage modulates conduction barriers at grain boundaries. Experimental validation utilized silicon nanowires with multiple transparent ITO gates to mimic grain boundary potential barriers. Photoresponse measurements under varying gate voltages and light intensities (532 nm LED) demonstrated excellent agreement with derived analytical equations, enabling the extraction of critical parameters such as minority carrier recombination lifetime (τ0) and critical light intensity. Silvaco TCAD simulations further corroborated the theory, showing barrier height and number-dependent photocurrent trends consistent with experiments. Additionally, polycrystalline ZnO thin-film devices and literature data from other polycrystalline systems were successfully fitted to the model, confirming its universality. This work provides a unified framework for optimizing responsivity and bandwidth in low-dimensional photodetectors, bridging theoretical insights with practical applications in next-generation optoelectronics.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"30 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145560527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kubra Sattar, Rabia Tahir, Muhammad Yousaf, Thorsten M. Gesing, M. Mangir Murshed, Syed Rizwan
As an exemplary member of the MXene family belonging to the class of two-dimensional materials, titanium carbide (Ti3C2Tx) MXene stands bright and is explored owing to its exceptional tunable properties. The full ambient oxidation of MXene in a spectrum of varying elevated temperatures toward the application of memristor devices is reported for the first time in this work. A Ti3C2Tx MXene free-standing film is oxidized in air from the temperature of 100 to 700 °C upon which the MXene completely transforms into the TiO2 film yet retaining its free-standing nature in the form of MXene-derived TiO2 films. Extensive surface, morphological, and bulk characterizations, such as x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray diffraction, confirmed the increasing Ti–O and decreasing Ti–C bond strength amid increasing oxidation. Furthermore, exceptional resistance switching properties are unveiled employing these heated MXene devices in tri-layer memristors utilizing flexible reduced graphene oxide as electrodes. The memristor device utilizing Ti3C2Tx MXene heated at 700 °C exhibited outstanding performance compared to the other series of devices with low switching voltage, a high OFF/ON ratio of >102, cycle-to-cycle repeatability, and exceptional endurance of over 6000 cycles. This work on MXene-derived TiO2 free-standing films will lay open ways to obtain oxide based flexible electronic devices through easy fabrication methods along with the possible capability to mimic unmatched synaptic features.
{"title":"Partial-to-fully oxidized spectrum of Ti3C2T x MXene-derived TiO2 free-standing films for nonvolatile high endurance memristive data storage","authors":"Kubra Sattar, Rabia Tahir, Muhammad Yousaf, Thorsten M. Gesing, M. Mangir Murshed, Syed Rizwan","doi":"10.1063/5.0293660","DOIUrl":"https://doi.org/10.1063/5.0293660","url":null,"abstract":"As an exemplary member of the MXene family belonging to the class of two-dimensional materials, titanium carbide (Ti3C2Tx) MXene stands bright and is explored owing to its exceptional tunable properties. The full ambient oxidation of MXene in a spectrum of varying elevated temperatures toward the application of memristor devices is reported for the first time in this work. A Ti3C2Tx MXene free-standing film is oxidized in air from the temperature of 100 to 700 °C upon which the MXene completely transforms into the TiO2 film yet retaining its free-standing nature in the form of MXene-derived TiO2 films. Extensive surface, morphological, and bulk characterizations, such as x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray diffraction, confirmed the increasing Ti–O and decreasing Ti–C bond strength amid increasing oxidation. Furthermore, exceptional resistance switching properties are unveiled employing these heated MXene devices in tri-layer memristors utilizing flexible reduced graphene oxide as electrodes. The memristor device utilizing Ti3C2Tx MXene heated at 700 °C exhibited outstanding performance compared to the other series of devices with low switching voltage, a high OFF/ON ratio of >102, cycle-to-cycle repeatability, and exceptional endurance of over 6000 cycles. This work on MXene-derived TiO2 free-standing films will lay open ways to obtain oxide based flexible electronic devices through easy fabrication methods along with the possible capability to mimic unmatched synaptic features.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"5 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145560528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Taehwan Kim, Sangbum Kim, Periyayya Uthirakumar, Yeong-Hoon Cho, Pil-Kyu Jang, Seungjae Baek, Vandung Dao, Sunny Yadav, Il-Soo Kim, Myung-Soo Han, Yong-Ho Ra, Sangjin Min, Dong-Soo Shin, Jong-In Shim, Stephen J. Pearton, In-Hwan Lee
Red micro-LEDs (μ-LEDs) hold immense potential for next-generation displays, but their efficiency, particularly in smaller sizes, remains a significant challenge. To address this, we introduce a novel approach that leverages localized surface plasmon resonance (LSPR) to dramatically boost the performance of red μ-LEDs. Our strategy involves integrating rod-shaped Au nanoparticles into a precisely engineered nanohole pattern. By strategically placing these nanoparticles, we optimize LSPR coupling with the active region of the μ-LEDs, resulting in significant enhancements in light extraction efficiency and reduced radiative recombination rates. Furthermore, we employ a chemical treatment to effectively passivate surface defects, minimizing non-radiative recombination losses. This synergistic approach leads to a substantial increase in both optical output and electroluminescence intensity, pushing the boundaries of red μ-LED performance. The nanohole-patterned μ-LED chips achieve a ∼2.32-fold higher optical output at 50 A/cm2, along with an ∼8.96-fold higher electroluminescence, compared to the bare μ-LEDs. A lower lifetime of 0.348 ns for the nanohole-patterned μ-LEDs elucidates the fundamental mechanism of the novel approach with a high energy-coupling efficiency (67%) of the multi-quantum wells through the fast LSP channel. Our findings offer a promising pathway to realize highly efficient and compact red μ-LEDs, paving the way for advanced display technologies with superior brightness, color purity, and energy efficiency.
{"title":"Revolutionizing red micro-LEDs: Harnessing surface plasmons for enhanced efficiency","authors":"Taehwan Kim, Sangbum Kim, Periyayya Uthirakumar, Yeong-Hoon Cho, Pil-Kyu Jang, Seungjae Baek, Vandung Dao, Sunny Yadav, Il-Soo Kim, Myung-Soo Han, Yong-Ho Ra, Sangjin Min, Dong-Soo Shin, Jong-In Shim, Stephen J. Pearton, In-Hwan Lee","doi":"10.1063/5.0256125","DOIUrl":"https://doi.org/10.1063/5.0256125","url":null,"abstract":"Red micro-LEDs (μ-LEDs) hold immense potential for next-generation displays, but their efficiency, particularly in smaller sizes, remains a significant challenge. To address this, we introduce a novel approach that leverages localized surface plasmon resonance (LSPR) to dramatically boost the performance of red μ-LEDs. Our strategy involves integrating rod-shaped Au nanoparticles into a precisely engineered nanohole pattern. By strategically placing these nanoparticles, we optimize LSPR coupling with the active region of the μ-LEDs, resulting in significant enhancements in light extraction efficiency and reduced radiative recombination rates. Furthermore, we employ a chemical treatment to effectively passivate surface defects, minimizing non-radiative recombination losses. This synergistic approach leads to a substantial increase in both optical output and electroluminescence intensity, pushing the boundaries of red μ-LED performance. The nanohole-patterned μ-LED chips achieve a ∼2.32-fold higher optical output at 50 A/cm2, along with an ∼8.96-fold higher electroluminescence, compared to the bare μ-LEDs. A lower lifetime of 0.348 ns for the nanohole-patterned μ-LEDs elucidates the fundamental mechanism of the novel approach with a high energy-coupling efficiency (67%) of the multi-quantum wells through the fast LSP channel. Our findings offer a promising pathway to realize highly efficient and compact red μ-LEDs, paving the way for advanced display technologies with superior brightness, color purity, and energy efficiency.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"3 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145553423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chao Liu, Yu-Cheng Lin, Yi Zheng, Rong-Qiang Li, Zheng-Chao Wang, Xiao-Ke Lu, Xiao-Hao Zhang, Fan Chu, Hao-Ran Zhang, Qiong-Hua Wang
As emerging photonic devices, tunable liquid lenses have received increasing attention and have already demonstrated great application value, especially in imaging and display fields. Due to the unique advantages of strong adjustability, fast response speed, low power consumption, and miniaturization, tunable liquid lenses provide a competitive solution for designing high-performance imaging and display systems with fast zoom and focus functions, and can help solve scientific issues and break through application limitations. In this review, we briefly introduce and classify current tunable liquid lenses. Then, we give an overview of the application of tunable liquid lenses in imaging and display fields, including microscopy, photography, endoscopy, autostereoscopic display, integral imaging display, holographic display, and AR/VR display. The existing problems, challenges, and perspectives for the applications of liquid lenses are also discussed.
{"title":"Application of tunable liquid lens in imaging and display","authors":"Chao Liu, Yu-Cheng Lin, Yi Zheng, Rong-Qiang Li, Zheng-Chao Wang, Xiao-Ke Lu, Xiao-Hao Zhang, Fan Chu, Hao-Ran Zhang, Qiong-Hua Wang","doi":"10.1063/5.0285668","DOIUrl":"https://doi.org/10.1063/5.0285668","url":null,"abstract":"As emerging photonic devices, tunable liquid lenses have received increasing attention and have already demonstrated great application value, especially in imaging and display fields. Due to the unique advantages of strong adjustability, fast response speed, low power consumption, and miniaturization, tunable liquid lenses provide a competitive solution for designing high-performance imaging and display systems with fast zoom and focus functions, and can help solve scientific issues and break through application limitations. In this review, we briefly introduce and classify current tunable liquid lenses. Then, we give an overview of the application of tunable liquid lenses in imaging and display fields, including microscopy, photography, endoscopy, autostereoscopic display, integral imaging display, holographic display, and AR/VR display. The existing problems, challenges, and perspectives for the applications of liquid lenses are also discussed.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"4 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145546069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thermoelectric energy conversion is a promising renewable technology to generate electricity by recovering waste heat. Great progress has been made in energy conversion efficiency of thermoelectric materials, but further performance enhancement has been expected by developing new material design rules. Recently, “mixed-anion” materials, which consist of two or more anionic species in a single phase, have attracted much attention as a next-generation high-performance thermoelectric material. They form unique crystal structures and coordination not observed in single-anion systems and have demonstrated, for example, extremely low lattice thermal conductivity and also specific electronic structure enabling high thermoelectric performance. This paper provides a comprehensive review of the recent advances in mixed-anion thermoelectric materials and the mixed-anion effect on electron and phonon transport. We first provide an overview of the historical approach of multiple-anion substitution onto single-anion compounds and discuss the substantial impacts of multiple anion substitutions across different material systems. Then, we summarize the characteristics of crystal structures and physical properties, as well as the recent advances in thermoelectric properties for the mixed-anion compounds that naturally contain multiple anions. In the end, we point out the currently unsolved challenges and future prospects toward the development of mixed-anion thermoelectrics. Mixed-anion materials have a large degree of freedom regarding the choice of the constituent anion combinations, which provides a wide search space for new materials with further outstanding thermoelectric performance. Going forward, we expect that the mixed-anion strategy offers great potential for finding new classes of high-performance thermoelectric materials.
{"title":"Mixed-anion thermoelectrics: Advanced tuning of electron and phonon transport","authors":"Takayoshi Katase, Naoki Sato, Takao Mori","doi":"10.1063/5.0263175","DOIUrl":"https://doi.org/10.1063/5.0263175","url":null,"abstract":"Thermoelectric energy conversion is a promising renewable technology to generate electricity by recovering waste heat. Great progress has been made in energy conversion efficiency of thermoelectric materials, but further performance enhancement has been expected by developing new material design rules. Recently, “mixed-anion” materials, which consist of two or more anionic species in a single phase, have attracted much attention as a next-generation high-performance thermoelectric material. They form unique crystal structures and coordination not observed in single-anion systems and have demonstrated, for example, extremely low lattice thermal conductivity and also specific electronic structure enabling high thermoelectric performance. This paper provides a comprehensive review of the recent advances in mixed-anion thermoelectric materials and the mixed-anion effect on electron and phonon transport. We first provide an overview of the historical approach of multiple-anion substitution onto single-anion compounds and discuss the substantial impacts of multiple anion substitutions across different material systems. Then, we summarize the characteristics of crystal structures and physical properties, as well as the recent advances in thermoelectric properties for the mixed-anion compounds that naturally contain multiple anions. In the end, we point out the currently unsolved challenges and future prospects toward the development of mixed-anion thermoelectrics. Mixed-anion materials have a large degree of freedom regarding the choice of the constituent anion combinations, which provides a wide search space for new materials with further outstanding thermoelectric performance. Going forward, we expect that the mixed-anion strategy offers great potential for finding new classes of high-performance thermoelectric materials.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"6 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145536039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuhan Liang, Huiping Han, Hetian Chen, Yujun Zhang, Yi Zhang, Chao Li, Shun Lan, Fangyuan Zhu, Ji Ma, Di Yi, Jing Ma, Liang Wu, Tianxiang Nan, Yuan-Hua Lin
The unique features of ultrafast spin dynamics and the absence of macroscopic magnetization in antiferromagnetic (AFM) materials provide a distinct route toward high-speed magnetic storage devices with low energy consumption and high integration density. However, these advantages also introduce challenges in probing and controlling AFM order, thereby restricting their practical application. In this study, we demonstrate an all-electric control and probing of AFM order in heavy metal/AFM insulator heterostructures on a ferroelectric substrate at room temperature. The AFM order was detected by the anomalous Hall effect (AHE) and manipulated by the ferroelectric field effect as well as the piezoelectric effect in heterostructures of Pt/NiO/0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT). The nonvolatile control of AFM order gives rise to a 33% modulation of AHE, which is further evidenced by synchrotron-based x-ray magnetic linear dichroism. Combined with the in situ piezoelectric response of AHE, we demonstrate that the ferroelectric polarization contributes mainly to the control of AFM order. Our results are expected to have broader implications for efficient spintronic devices.
{"title":"Electrical modulation and probing of antiferromagnetism in hybrid multiferroic heterostructures","authors":"Yuhan Liang, Huiping Han, Hetian Chen, Yujun Zhang, Yi Zhang, Chao Li, Shun Lan, Fangyuan Zhu, Ji Ma, Di Yi, Jing Ma, Liang Wu, Tianxiang Nan, Yuan-Hua Lin","doi":"10.1063/5.0274464","DOIUrl":"https://doi.org/10.1063/5.0274464","url":null,"abstract":"The unique features of ultrafast spin dynamics and the absence of macroscopic magnetization in antiferromagnetic (AFM) materials provide a distinct route toward high-speed magnetic storage devices with low energy consumption and high integration density. However, these advantages also introduce challenges in probing and controlling AFM order, thereby restricting their practical application. In this study, we demonstrate an all-electric control and probing of AFM order in heavy metal/AFM insulator heterostructures on a ferroelectric substrate at room temperature. The AFM order was detected by the anomalous Hall effect (AHE) and manipulated by the ferroelectric field effect as well as the piezoelectric effect in heterostructures of Pt/NiO/0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT). The nonvolatile control of AFM order gives rise to a 33% modulation of AHE, which is further evidenced by synchrotron-based x-ray magnetic linear dichroism. Combined with the in situ piezoelectric response of AHE, we demonstrate that the ferroelectric polarization contributes mainly to the control of AFM order. Our results are expected to have broader implications for efficient spintronic devices.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"65 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145536041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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