“AI for science” is widely recognized as a future trend in the development of scientific research. Currently, although machine learning algorithms have played a crucial role in scientific research with numerous successful cases, relatively few instances exist where AI assists researchers in uncovering the underlying physical mechanisms behind a certain phenomenon and subsequently using that mechanism to improve machine learning algorithms' efficiency. This article uses the investigation into the relationship between extreme Poisson's ratio values and the structure of amorphous networks as a case study to illustrate how machine learning methods can assist in revealing underlying physical mechanisms. Upon recognizing that the Poisson's ratio relies on the low-frequency vibrational modes of the dynamical matrix, we can then employ a convolutional neural network, trained on the dynamical matrix instead of traditional image recognition, to predict the Poisson's ratio of amorphous networks with a much higher efficiency. Through this example, we aim to showcase the role that artificial intelligence can play in revealing fundamental physical mechanisms, which subsequently improves the machine learning algorithms significantly.
{"title":"A cyclical route linking fundamental mechanism and AI algorithm: An example from tuning Poisson's ratio in amorphous networks","authors":"Changliang Zhu, Chenchao Fang, Zhipeng Jin, Baowen Li, Xiangying Shen, Lei Xu","doi":"10.1063/5.0199530","DOIUrl":"https://doi.org/10.1063/5.0199530","url":null,"abstract":"“AI for science” is widely recognized as a future trend in the development of scientific research. Currently, although machine learning algorithms have played a crucial role in scientific research with numerous successful cases, relatively few instances exist where AI assists researchers in uncovering the underlying physical mechanisms behind a certain phenomenon and subsequently using that mechanism to improve machine learning algorithms' efficiency. This article uses the investigation into the relationship between extreme Poisson's ratio values and the structure of amorphous networks as a case study to illustrate how machine learning methods can assist in revealing underlying physical mechanisms. Upon recognizing that the Poisson's ratio relies on the low-frequency vibrational modes of the dynamical matrix, we can then employ a convolutional neural network, trained on the dynamical matrix instead of traditional image recognition, to predict the Poisson's ratio of amorphous networks with a much higher efficiency. Through this example, we aim to showcase the role that artificial intelligence can play in revealing fundamental physical mechanisms, which subsequently improves the machine learning algorithms significantly.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"1 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141495809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The rapid success achieved from perovskite solar cell has drawn great expectations for commercialization of next-generation photovoltaics. Among the various perovskite materials, the inorganic perovskite derivatives have been of particular interest, ascribed to its superior thermal and chemical stability, which is a crucial criterion for reliable long-term operation. Nonetheless, the development of the efficient inorganic perovskite solar cells has been lagged from its organic–inorganic hybrid counterparts owing to the notorious phase-stability challenges associated with the formation of non-photoactive phases. The early progress of the inorganic perovskite solar cells has been centered on the stable perovskite phase-preparation and leads to the effective bulk management through intermediate engineering and compositional engineering strategies. Yet, challenges remain in securing the as-formed perovskite phase throughout the long-term operation. Accordingly, recent studies find interfacial modification strategies successful by constricting the phase-transformation channels in various perspectives such as defect propagation, strain, component segregation, charge accumulation, and external stresses. In this review, we start with the brief description on the inorganic perovskite solar cells and the associated advantages including chemical and optoelectronic properties. We then provide a review on the challenges of inorganic perovskite solar cells associated with the phase instabilities. We elaborate on the origins of the phase instabilities in terms of thermodynamics and the recently proposed channels including intrinsic factors and extrinsic factors that facilitate the detrimental phase transformation. Finally, we survey the recent successful approaches to stabilize the inorganic perovskite solar cells through interface managements and provide outlook on further progress.
{"title":"Interfacial modification strategies to secure phase-stability for inorganic perovskite solar cells","authors":"Hyong Joon Lee, Jin Hyuck Heo, Sang Hyuk Im","doi":"10.1063/5.0202332","DOIUrl":"https://doi.org/10.1063/5.0202332","url":null,"abstract":"The rapid success achieved from perovskite solar cell has drawn great expectations for commercialization of next-generation photovoltaics. Among the various perovskite materials, the inorganic perovskite derivatives have been of particular interest, ascribed to its superior thermal and chemical stability, which is a crucial criterion for reliable long-term operation. Nonetheless, the development of the efficient inorganic perovskite solar cells has been lagged from its organic–inorganic hybrid counterparts owing to the notorious phase-stability challenges associated with the formation of non-photoactive phases. The early progress of the inorganic perovskite solar cells has been centered on the stable perovskite phase-preparation and leads to the effective bulk management through intermediate engineering and compositional engineering strategies. Yet, challenges remain in securing the as-formed perovskite phase throughout the long-term operation. Accordingly, recent studies find interfacial modification strategies successful by constricting the phase-transformation channels in various perspectives such as defect propagation, strain, component segregation, charge accumulation, and external stresses. In this review, we start with the brief description on the inorganic perovskite solar cells and the associated advantages including chemical and optoelectronic properties. We then provide a review on the challenges of inorganic perovskite solar cells associated with the phase instabilities. We elaborate on the origins of the phase instabilities in terms of thermodynamics and the recently proposed channels including intrinsic factors and extrinsic factors that facilitate the detrimental phase transformation. Finally, we survey the recent successful approaches to stabilize the inorganic perovskite solar cells through interface managements and provide outlook on further progress.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"32 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141489118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Graziela C. Sedenho, Rafael N. P. Colombo, Rodrigo M. Iost, Filipe C. D. A. Lima, Frank N. Crespilho
Electron transfer (ET) is a fundamental process that underlies various phenomena in physics, chemistry, and biology. Understanding ET mechanisms is crucial for developing sustainable energy solutions and synthesizing value-added compounds efficiently. In this context, the present review provides the fundamental aspects of ET involving bioinspired, biomimetics, and biological entities and its significance for sustainable energy and green electrosynthesis fields. Among the theoretical and experimental cornerstones, Marcus Theory, electronic conductance, computational modeling, biomolecular thermodynamics, electrochemical and kinetic theories, protein film voltammetry, and the emergence of in situ and operando techniques are explored. Theoretical modeling is vital for understanding and predicting ET processes. Additionally, the significance of experimental techniques for investigating the ET process in biological entities and interfaces is discussed. Protein film voltammetry is a valuable and consolidated technique for studying ET processes at the protein-electrode interface, whereas in situ and operando techniques for interrogating ET processes in real time provide insights into the dynamics and mechanisms of ET. The concept of quantum conductance in biological structures is addressed, evidencing a trend and power of single-entity analysis. Aspects of extracellular and interfacial ET processes are presented and discussed in the electrochemical energy conversion systems. A deep understanding of these processes can improve the design of efficient bioinspired catalysts. Therefore, this multidisciplinary work aims to fill the gaps between different scientific fields related to ET involving bioentities to develop innovative energy and value-added compound synthesis solutions.
电子转移（ET）是物理学、化学和生物学中各种现象的基本过程。了解 ET 机制对于开发可持续能源解决方案和高效合成高附加值化合物至关重要。在此背景下，本综述介绍了涉及生物启发、生物仿生和生物实体的 ET 基本方面及其对可持续能源和绿色电合成领域的意义。在理论和实验基石中，探讨了马库斯理论、电子传导、计算建模、生物分子热力学、电化学和动力学理论、蛋白质膜伏安法以及原位和操作技术的出现。理论建模对于理解和预测 ET 过程至关重要。此外，还讨论了实验技术对研究生物实体和界面中 ET 过程的意义。蛋白膜伏安法是研究蛋白质-电极界面 ET 过程的一种宝贵而又可靠的技术，而用于实时检测 ET 过程的原位和手术技术则为 ET 的动力学和机制提供了深入的见解。该研究探讨了生物结构中的量子传导概念，证明了单实体分析的趋势和威力。在电化学能量转换系统中介绍和讨论了细胞外和界面 ET 过程的各个方面。深入了解这些过程可以改进高效生物启发催化剂的设计。因此，这项多学科工作旨在填补与涉及生物实体的 ET 相关的不同科学领域之间的空白，以开发创新的能源和增值化合物合成解决方案。
{"title":"Exploring electron transfer: Bioinspired, biomimetics, and bioelectrochemical systems for sustainable energy and Value-Added compound synthesis","authors":"Graziela C. Sedenho, Rafael N. P. Colombo, Rodrigo M. Iost, Filipe C. D. A. Lima, Frank N. Crespilho","doi":"10.1063/5.0204996","DOIUrl":"https://doi.org/10.1063/5.0204996","url":null,"abstract":"Electron transfer (ET) is a fundamental process that underlies various phenomena in physics, chemistry, and biology. Understanding ET mechanisms is crucial for developing sustainable energy solutions and synthesizing value-added compounds efficiently. In this context, the present review provides the fundamental aspects of ET involving bioinspired, biomimetics, and biological entities and its significance for sustainable energy and green electrosynthesis fields. Among the theoretical and experimental cornerstones, Marcus Theory, electronic conductance, computational modeling, biomolecular thermodynamics, electrochemical and kinetic theories, protein film voltammetry, and the emergence of in situ and operando techniques are explored. Theoretical modeling is vital for understanding and predicting ET processes. Additionally, the significance of experimental techniques for investigating the ET process in biological entities and interfaces is discussed. Protein film voltammetry is a valuable and consolidated technique for studying ET processes at the protein-electrode interface, whereas in situ and operando techniques for interrogating ET processes in real time provide insights into the dynamics and mechanisms of ET. The concept of quantum conductance in biological structures is addressed, evidencing a trend and power of single-entity analysis. Aspects of extracellular and interfacial ET processes are presented and discussed in the electrochemical energy conversion systems. A deep understanding of these processes can improve the design of efficient bioinspired catalysts. Therefore, this multidisciplinary work aims to fill the gaps between different scientific fields related to ET involving bioentities to develop innovative energy and value-added compound synthesis solutions.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"31 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141461847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Manasi Mandal, Abhijatmedhi Chotrattanapituk, Kevin Woller, Lijun Wu, Haowei Xu, Nguyen Tuan Hung, Nannan Mao, Ryotaro Okabe, Artittaya Boonkird, Thanh Nguyen, Nathan C. Drucker, Xiaoqian M. Chen, Takashi Momiki, Ju Li, Jing Kong, Yimei Zhu, Mingda Li
The precise controllability of the Fermi level is a critical aspect of quantum materials. For topological Weyl semimetals, there is a pressing need to fine-tune the Fermi level to the Weyl nodes and unlock exotic electronic and optoelectronic effects associated with the divergent Berry curvature. However, in contrast to two-dimensional materials, where the Fermi level can be controlled through various techniques, the situation for bulk crystals beyond laborious chemical doping poses significant challenges. Here, we report the milli-electron-volt (meV) level ultra-fine-tuning of the Fermi level of bulk topological Weyl semimetal tantalum phosphide using accelerator-based high-energy hydrogen implantation and theory-driven planning. By calculating the desired carrier density and controlling the accelerator profiles, the Fermi level can be experimentally fine-tuned from 5 meV below, to 3.8 meV below, to 3.2 meV above the Weyl nodes. High-resolution transmission electron microscopy reveals the crystalline structure is largely maintained under irradiation, while electrical transport indicates that Weyl nodes are preserved and carrier mobility is also largely retained. Our work demonstrates the viability of this generic approach to tune the Fermi level in semimetal systems and could serve to achieve property fine-tuning for other bulk quantum materials with ultrahigh precision.
{"title":"Precise Fermi level engineering in a topological Weyl semimetal via fast ion implantation","authors":"Manasi Mandal, Abhijatmedhi Chotrattanapituk, Kevin Woller, Lijun Wu, Haowei Xu, Nguyen Tuan Hung, Nannan Mao, Ryotaro Okabe, Artittaya Boonkird, Thanh Nguyen, Nathan C. Drucker, Xiaoqian M. Chen, Takashi Momiki, Ju Li, Jing Kong, Yimei Zhu, Mingda Li","doi":"10.1063/5.0181361","DOIUrl":"https://doi.org/10.1063/5.0181361","url":null,"abstract":"The precise controllability of the Fermi level is a critical aspect of quantum materials. For topological Weyl semimetals, there is a pressing need to fine-tune the Fermi level to the Weyl nodes and unlock exotic electronic and optoelectronic effects associated with the divergent Berry curvature. However, in contrast to two-dimensional materials, where the Fermi level can be controlled through various techniques, the situation for bulk crystals beyond laborious chemical doping poses significant challenges. Here, we report the milli-electron-volt (meV) level ultra-fine-tuning of the Fermi level of bulk topological Weyl semimetal tantalum phosphide using accelerator-based high-energy hydrogen implantation and theory-driven planning. By calculating the desired carrier density and controlling the accelerator profiles, the Fermi level can be experimentally fine-tuned from 5 meV below, to 3.8 meV below, to 3.2 meV above the Weyl nodes. High-resolution transmission electron microscopy reveals the crystalline structure is largely maintained under irradiation, while electrical transport indicates that Weyl nodes are preserved and carrier mobility is also largely retained. Our work demonstrates the viability of this generic approach to tune the Fermi level in semimetal systems and could serve to achieve property fine-tuning for other bulk quantum materials with ultrahigh precision.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"27 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141452854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Saheed E. Elugoke, Yared S. Worku, Taiwo W. Quadri, V. V Srinivasu, Eno E. Ebenso
Niobium carbide MXenes belong to a class of metal carbide MXenes with niobium as the early transition metal. The transformation of niobium carbide MXene sheets in to few-layer MXene sheets, the combination of the niobium-based MXene with other materials, delamination, intercalation, and partial oxidation of the niobium carbide MXene sheets have resulted in the formation of a material with excellent energy storage and sensing potentials. Herein, the synthesis and classification of the niobium-based MXenes (NBM), their application as sensing materials for a wide range of analytes, and their energy storage potentials are discussed exhaustively. The various transformations of niobium carbide MXenes over the last two decades are also established in this timely review. Essentially, this review is a searchlight on the prospects of NBM, the current state of their application, and their relevance in the materials research community.
{"title":"Harnessing niobium-based MXenes for sensors and energy storage applications: The past, the present and the future","authors":"Saheed E. Elugoke, Yared S. Worku, Taiwo W. Quadri, V. V Srinivasu, Eno E. Ebenso","doi":"10.1063/5.0211843","DOIUrl":"https://doi.org/10.1063/5.0211843","url":null,"abstract":"Niobium carbide MXenes belong to a class of metal carbide MXenes with niobium as the early transition metal. The transformation of niobium carbide MXene sheets in to few-layer MXene sheets, the combination of the niobium-based MXene with other materials, delamination, intercalation, and partial oxidation of the niobium carbide MXene sheets have resulted in the formation of a material with excellent energy storage and sensing potentials. Herein, the synthesis and classification of the niobium-based MXenes (NBM), their application as sensing materials for a wide range of analytes, and their energy storage potentials are discussed exhaustively. The various transformations of niobium carbide MXenes over the last two decades are also established in this timely review. Essentially, this review is a searchlight on the prospects of NBM, the current state of their application, and their relevance in the materials research community.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"33 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141452952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Light-emitting diodes (LEDs) have been known as the most widely used light source in lighting and displays for more than 60 years. There is still room for progress in the performance of LEDs, especially since the current devices with various types of different light-emitting layer materials have converged to unity in terms of internal quantum efficiency, and there is an urgent need to improve the light extraction efficiency. Metasurfaces (MSs) have received attention from researchers as structures that can be integrated with LEDs to efficiently modulate the phase and amplitude of light through resonance and scattering, which can reduce light loss. This paper reviews the development of metasurfaces in LEDs so far. The different working mechanisms of metasurfaces composed of different materials are first analyzed in depth. Subsequently, three aspects of light extraction, angle change, and polarization modulation are described in detail according to different applications of metasurfaces in LEDs. Finally, the current status of metasurface applications in LEDs is summarized, and the future development prospects are envisioned.
发光二极管（LED）作为照明和显示领域应用最广泛的光源已有 60 多年的历史。发光二极管的性能仍有进步的空间，特别是目前采用各种不同发光层材料的设备在内部量子效率方面已趋于一致，因此迫切需要提高光提取效率。元表面（MS）作为可与 LED 集成的结构受到了研究人员的关注，这种结构可通过共振和散射有效地调制光的相位和振幅，从而减少光损耗。本文回顾了迄今为止 LED 中元表面的发展情况。首先深入分析了由不同材料组成的元表面的不同工作机制。随后，根据元表面在 LED 中的不同应用，详细介绍了光提取、角度变化和偏振调制三个方面。最后，总结了元表面在 LED 中的应用现状，并展望了未来的发展前景。
{"title":"Recent progress of metasurfaces in light-emitting diodes","authors":"Xin-Yi Zeng, Hong-Yi Hou, Yan-Qing Li, Jian-Xin Tang","doi":"10.1063/5.0201680","DOIUrl":"https://doi.org/10.1063/5.0201680","url":null,"abstract":"Light-emitting diodes (LEDs) have been known as the most widely used light source in lighting and displays for more than 60 years. There is still room for progress in the performance of LEDs, especially since the current devices with various types of different light-emitting layer materials have converged to unity in terms of internal quantum efficiency, and there is an urgent need to improve the light extraction efficiency. Metasurfaces (MSs) have received attention from researchers as structures that can be integrated with LEDs to efficiently modulate the phase and amplitude of light through resonance and scattering, which can reduce light loss. This paper reviews the development of metasurfaces in LEDs so far. The different working mechanisms of metasurfaces composed of different materials are first analyzed in depth. Subsequently, three aspects of light extraction, angle change, and polarization modulation are described in detail according to different applications of metasurfaces in LEDs. Finally, the current status of metasurface applications in LEDs is summarized, and the future development prospects are envisioned.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"334 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141448241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sujuan Hu, Wenbin Xiang, Baiquan Liu, Lingjiao Zhang, Genghui Zhang, Min Guo, Jinhu Yang, Yunfei Ren, Junhong Yu, Zhenyu Yang, Huayu Gao, Jing Wang, Qifan Xue, Fion Sze Yan Yeung, Jiayu Zhang, Hoi Sing Kwok, Chuan Liu
Two-dimensional (2D) nanocrystals are promising for optoelectronic and microelectronic technologies. However, the performance of 2D nanocrystal light-emitting diodes (LEDs) remains limited. Here, exciton dynamics are rationally controlled by both shell engineering and device engineering, obtaining colloidal quantum well LEDs (CQW-LEDs) with superior performance. The formation of CQW films on charge transport layers shows an excellent photoluminescence quantum yield of 76.63%. An unreported relationship among Auger lifetime, electron confinement energy, and external quantum efficiency (EQE) in 2D nanocrystal devices is directly observed. The optimized CQW-LEDs possess a maximum power efficiency of 6.04 lm W−1 and a current efficiency of 9.20 cd A−1, setting record efficiencies for 2D nanocrystal red LEDs. Additionally, a remarkable EQE of 13.43% has been achieved, accompanied by an exceptionally low efficiency roll-off. Significantly, EQE for flexible CQW-LEDs is 42-fold higher than the previous best results. Furthermore, active-matrix CQW-LEDs on printed circuit boards are developed. The findings not only unlock new possibilities for controlling exciton dynamics but also provide an alternative strategy to achieve high-performance 2D nanocrystal based applications.
{"title":"Exciton control enables high-performance colloidal quantum well light-emitting diodes","authors":"Sujuan Hu, Wenbin Xiang, Baiquan Liu, Lingjiao Zhang, Genghui Zhang, Min Guo, Jinhu Yang, Yunfei Ren, Junhong Yu, Zhenyu Yang, Huayu Gao, Jing Wang, Qifan Xue, Fion Sze Yan Yeung, Jiayu Zhang, Hoi Sing Kwok, Chuan Liu","doi":"10.1063/5.0206176","DOIUrl":"https://doi.org/10.1063/5.0206176","url":null,"abstract":"Two-dimensional (2D) nanocrystals are promising for optoelectronic and microelectronic technologies. However, the performance of 2D nanocrystal light-emitting diodes (LEDs) remains limited. Here, exciton dynamics are rationally controlled by both shell engineering and device engineering, obtaining colloidal quantum well LEDs (CQW-LEDs) with superior performance. The formation of CQW films on charge transport layers shows an excellent photoluminescence quantum yield of 76.63%. An unreported relationship among Auger lifetime, electron confinement energy, and external quantum efficiency (EQE) in 2D nanocrystal devices is directly observed. The optimized CQW-LEDs possess a maximum power efficiency of 6.04 lm W−1 and a current efficiency of 9.20 cd A−1, setting record efficiencies for 2D nanocrystal red LEDs. Additionally, a remarkable EQE of 13.43% has been achieved, accompanied by an exceptionally low efficiency roll-off. Significantly, EQE for flexible CQW-LEDs is 42-fold higher than the previous best results. Furthermore, active-matrix CQW-LEDs on printed circuit boards are developed. The findings not only unlock new possibilities for controlling exciton dynamics but also provide an alternative strategy to achieve high-performance 2D nanocrystal based applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"17 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141448249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
As a two-dimensional (2D) inorganic molecular van der Waals crystal, Sb2O3 has been widely recognized as an excellent dielectric and encapsulation material due to its wide bandgap, high dielectric constant (κ), and remarkably high air stability. Considering the significance and potential application of Sb2O3 in future electronic devices, it is valuable to summarize its recent advancements. In this review, we present the latest progress on 2D Sb2O3 flakes and films, encompassing synthesis methods, physical properties, and device applications. First, preparation strategies such as chemical vapor deposition, vertical physical vapor deposition, thermal evaporation deposition, liquid metal synthesis, and atomic layer deposition growth routes are highlighted. Subsequently, the mechanical properties and the phase transition mechanisms of 2D Sb2O3 are presented. Moreover, device applications, including encapsulation layer, photodetector, and gate dielectric, are demonstrated. Finally, we outline the future challenges and research priorities of 2D Sb2O3 materials.
{"title":"Two-dimensional molecular crystal Sb2O3 for electronics and optoelectronics","authors":"Jing Yu, Wei Han, Ruey Jinq Ong, Jing-Wen Shi, Abdulsalam Aji Suleiman, Kailang Liu, Francis Chi-Chung Ling","doi":"10.1063/5.0205749","DOIUrl":"https://doi.org/10.1063/5.0205749","url":null,"abstract":"As a two-dimensional (2D) inorganic molecular van der Waals crystal, Sb2O3 has been widely recognized as an excellent dielectric and encapsulation material due to its wide bandgap, high dielectric constant (κ), and remarkably high air stability. Considering the significance and potential application of Sb2O3 in future electronic devices, it is valuable to summarize its recent advancements. In this review, we present the latest progress on 2D Sb2O3 flakes and films, encompassing synthesis methods, physical properties, and device applications. First, preparation strategies such as chemical vapor deposition, vertical physical vapor deposition, thermal evaporation deposition, liquid metal synthesis, and atomic layer deposition growth routes are highlighted. Subsequently, the mechanical properties and the phase transition mechanisms of 2D Sb2O3 are presented. Moreover, device applications, including encapsulation layer, photodetector, and gate dielectric, are demonstrated. Finally, we outline the future challenges and research priorities of 2D Sb2O3 materials.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"22 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141185225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sen Huang, Xinhua Wang, Yixu Yao, Kexin Deng, Yang Yang, Qimeng Jiang, Xinyu Liu, Fuqiang Guo, Bo Shen, Kevin J. Chen, Yue Hao
III-nitride heterostructure-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs), compared with Schottky and p-GaN gate HEMTs, have demonstrated significant potential in the next-generation high-power electronic devices due to their exceptional gate reliability. This study presents a comprehensive investigation of threshold voltage (VTH) instability in III-nitride heterostructure-based MIS-HEMTs, with a specific emphasis on the interfaces of the multi-heterostructures. Two widely studied amorphous materials, namely, Al2O3 and SiNx, have been extensively examined as primary gate insulators in GaN-based MIS-HEMTs. To efficiently remove native oxides from the (Al)GaN surface, a novel in situ high-temperature remote plasma pretreatment (RPP) technique has been developed. This technique involves sequential application of NH3/N2 plasmas on the (Al)GaN surface before depositing the gate insulators using plasma-enhanced atomic layer deposition. The remarkable RPP process has proven to be a highly effective method for revealing atomic steps on the GaN surface, irrespective of whether the surface has undergone oxidation or etching processes. To further enhance the interface quality and potentially reduce bulk traps in the gate insulator, optimization of deposition temperature and post-deposition annealing conditions have been explored. Additionally, an electron-blocking layer, such as SiON, is incorporated into the MIS-HEMTs to prevent electron injection into bulk traps within the insulator. Novel characterization techniques including constant-capacitance and isothermal-mode deep-level transient spectroscopy have also been developed to explore the failure mechanisms in MIS-HEMTs. These techniques allow for the differentiation between bulk traps in the GaN epitaxy and those present within the gate insulators. This in-depth physical understanding provides valuable insights into the sources of failure in GaN-based MIS-HEMTs.
{"title":"Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering","authors":"Sen Huang, Xinhua Wang, Yixu Yao, Kexin Deng, Yang Yang, Qimeng Jiang, Xinyu Liu, Fuqiang Guo, Bo Shen, Kevin J. Chen, Yue Hao","doi":"10.1063/5.0179376","DOIUrl":"https://doi.org/10.1063/5.0179376","url":null,"abstract":"III-nitride heterostructure-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs), compared with Schottky and p-GaN gate HEMTs, have demonstrated significant potential in the next-generation high-power electronic devices due to their exceptional gate reliability. This study presents a comprehensive investigation of threshold voltage (VTH) instability in III-nitride heterostructure-based MIS-HEMTs, with a specific emphasis on the interfaces of the multi-heterostructures. Two widely studied amorphous materials, namely, Al2O3 and SiNx, have been extensively examined as primary gate insulators in GaN-based MIS-HEMTs. To efficiently remove native oxides from the (Al)GaN surface, a novel in situ high-temperature remote plasma pretreatment (RPP) technique has been developed. This technique involves sequential application of NH3/N2 plasmas on the (Al)GaN surface before depositing the gate insulators using plasma-enhanced atomic layer deposition. The remarkable RPP process has proven to be a highly effective method for revealing atomic steps on the GaN surface, irrespective of whether the surface has undergone oxidation or etching processes. To further enhance the interface quality and potentially reduce bulk traps in the gate insulator, optimization of deposition temperature and post-deposition annealing conditions have been explored. Additionally, an electron-blocking layer, such as SiON, is incorporated into the MIS-HEMTs to prevent electron injection into bulk traps within the insulator. Novel characterization techniques including constant-capacitance and isothermal-mode deep-level transient spectroscopy have also been developed to explore the failure mechanisms in MIS-HEMTs. These techniques allow for the differentiation between bulk traps in the GaN epitaxy and those present within the gate insulators. This in-depth physical understanding provides valuable insights into the sources of failure in GaN-based MIS-HEMTs.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"135 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141185133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Magnetic skyrmions offer promising prospects for constructing future energy-efficient and high-density information technology, leading to extensive explorations of new skyrmionic materials recently. The topological Hall effect has been widely adopted as a distinctive marker of skyrmion emergence. Alternately, here we propose a novel signature of skyrmion state by quantitatively investigating the magnetoresistance (MR) induced by skyrmionic bubbles in CeMn2Ge2. An intriguing finding was revealed: the anomalous MR measured at different temperatures can be normalized into a single curve, regardless of sample thickness. This behavior can be accurately reproduced by the recent chiral spin textures MR model. Further analysis of the MR anomaly allowed us to quantitatively examine the effective magnetic fields of various scattering channels. Remarkably, the analyses, combined with the Lorentz transmission electron microscopy results, indicate that the in-plane scattering channel with triplet exchange interactions predominantly governs the magnetotransport in the Bloch-type skyrmionic bubble state. Our results not only provide insights into the quantum correction on MR induced by skyrmionic bubble phase, but also present an electrical probing method for studying chiral spin texture formation, evolution, and their topological properties, which opens up exciting possibilities for identifying new skyrmionic materials and advancing the methodology for studying chiral spin textures.
{"title":"Topological magnetoresistance of magnetic skyrmionic bubbles","authors":"Fei Li, Hao Nie, Yu Zhao, Zhihe Zhao, Juntao Huo, Tianyang Wang, Zhaoliang Liao, Andi Liu, Hanjie Guo, Hongxian Shen, Sida Jiang, Renjie Chen, Aru Yan, S.-W. Cheong, Weixing Xia, Jianfei Sun, Lunyong Zhang","doi":"10.1063/5.0190685","DOIUrl":"https://doi.org/10.1063/5.0190685","url":null,"abstract":"Magnetic skyrmions offer promising prospects for constructing future energy-efficient and high-density information technology, leading to extensive explorations of new skyrmionic materials recently. The topological Hall effect has been widely adopted as a distinctive marker of skyrmion emergence. Alternately, here we propose a novel signature of skyrmion state by quantitatively investigating the magnetoresistance (MR) induced by skyrmionic bubbles in CeMn2Ge2. An intriguing finding was revealed: the anomalous MR measured at different temperatures can be normalized into a single curve, regardless of sample thickness. This behavior can be accurately reproduced by the recent chiral spin textures MR model. Further analysis of the MR anomaly allowed us to quantitatively examine the effective magnetic fields of various scattering channels. Remarkably, the analyses, combined with the Lorentz transmission electron microscopy results, indicate that the in-plane scattering channel with triplet exchange interactions predominantly governs the magnetotransport in the Bloch-type skyrmionic bubble state. Our results not only provide insights into the quantum correction on MR induced by skyrmionic bubble phase, but also present an electrical probing method for studying chiral spin texture formation, evolution, and their topological properties, which opens up exciting possibilities for identifying new skyrmionic materials and advancing the methodology for studying chiral spin textures.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"72 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141182655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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