Interlayer excitons (IXs) in van der Waals (vdW) heterostructures offer prolonged lifetimes and electrically tunable dipoles, enabling advanced excitonic devices and coherent light sources. However, achieving stable and efficient room temperature IX emission for applications requires vdW systems with both momentum-matched band alignment and feasible scalable fabrication capability, which is still challenging. Here, we propose to address this issue by demonstrating vdW epitaxy of a uniformly distributed bilayered 2H-WSe2/PbI2 heterojunction, which exhibits uniform and stable IX emission at 1.36 eV at room temperature. First-principle calculations and experiments confirm that the momentum-direct IX emission at the Γ point is possible. Thanks to the inorganic nature of PbI2, the occurrence of IX emission is air stable. The IX emission intensity retains 84.2% of its initial intensity after 4 months in ambient condition. The high IX binding energy (85.3 meV), long lifetime (3.77 ns), and large blueshift (45 meV) during power-dependent emission spectra demonstrate the strong Coulomb interactions and robust nature of the IXs. More delightfully, the valley information in IXs is preserved, showing a stable valley polarization degree of 19.58% at 83 K. These results indicate that the bilayered 2H-WSe2/PbI2 heterojunction is a promising platform for promoting the development of IX-related fundamental science research and applications.
{"title":"Design and controlled vdW epitaxy of WSe2/PbI2 heterostructure for robust momentum-direct interlayer exciton emission at room temperature","authors":"Chang Lu, Meili Long, Huan Liu, Haixia Zhu, Zhihui Chen, Zhenqing Li, Jiong Yang, Xutao Zhang, Jun He, Xiaoming Yuan","doi":"10.1063/5.0312697","DOIUrl":"https://doi.org/10.1063/5.0312697","url":null,"abstract":"Interlayer excitons (IXs) in van der Waals (vdW) heterostructures offer prolonged lifetimes and electrically tunable dipoles, enabling advanced excitonic devices and coherent light sources. However, achieving stable and efficient room temperature IX emission for applications requires vdW systems with both momentum-matched band alignment and feasible scalable fabrication capability, which is still challenging. Here, we propose to address this issue by demonstrating vdW epitaxy of a uniformly distributed bilayered 2H-WSe2/PbI2 heterojunction, which exhibits uniform and stable IX emission at 1.36 eV at room temperature. First-principle calculations and experiments confirm that the momentum-direct IX emission at the Γ point is possible. Thanks to the inorganic nature of PbI2, the occurrence of IX emission is air stable. The IX emission intensity retains 84.2% of its initial intensity after 4 months in ambient condition. The high IX binding energy (85.3 meV), long lifetime (3.77 ns), and large blueshift (45 meV) during power-dependent emission spectra demonstrate the strong Coulomb interactions and robust nature of the IXs. More delightfully, the valley information in IXs is preserved, showing a stable valley polarization degree of 19.58% at 83 K. These results indicate that the bilayered 2H-WSe2/PbI2 heterojunction is a promising platform for promoting the development of IX-related fundamental science research and applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"60 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shuai Wang, Mingrui Liu, Shunpeng Lu, Hang Zang, Zhiming Shi, Ke Jiang, Yuping Jia, Rui Sun, Bo Lai, Xiaojuan Sun, Dabing Li
Embodied intelligence, which realizes adaptive behavior through dynamic physical interaction between an agent and its environment, relies critically on hardware capable of integrated perception, storage, and computation (PSC). Ferroelectric neuromorphic devices, which emulate synaptic functions, offer a promising path toward such PSC integration and toward overcoming the energy limitations of von Neumann architectures. However, incompatibility with mainstream semiconductor platforms has always hindered the practical application of traditional oxide ferroelectrics. Recently, wurtzite-structured nitride ferroelectrics have emerged as highly attractive candidates for neuromorphic devices, combining the merits of compatibility with mainstream semiconductor platforms, enhanced remanent polarization (Pr) and piezoelectric polarization, scalability to ultrathin thicknesses, high Curie temperature (Tc), and robust ferroelectric phase stability. While prior reviews have covered basic properties, growth methods, and memristive operation mechanisms of AlScN-based devices, achieving the deep integration of physical systems with artificial intelligence demands memristors with functionalities beyond mere storage and computation. A critical future direction involves embedding multisensory capabilities into neuromorphic devices to enable truly embodied intelligence. This review focuses on the application of wurtzite ferroelectrics in embodied intelligence neuromorphic devices. Given that neuromorphic computing is tightly linked to ferroelectric domain evolution and material properties, the domain dynamics of wurtzite ferroelectrics, including reverse domain nucleation and domain wall motion mechanisms during polarization switching, are systematically discussed. Additionally, we analyze the key factors influencing ferroelectric performance and their modulation strategies, which are critical for ensuring the functionality of neuromorphic devices. For device applications, we summarize the working principles and latest progress in neuromorphic devices, with particular emphasis on two-terminal memristors based on AlScN/n-GaN heterojunction and three-terminal memristors based on two-dimensional materials or two-dimensional electron gas channels, highlighting their potential to integrate sensing, memory, and computation within a single platform. Finally, we outline current challenges and future directions, aiming to provide insights for advancing wurtzite ferroelectrics in high-performance neuromorphic devices for embodied intelligence.
{"title":"Emerging wurtzite ferroelectrics and their prospect in embodied intelligence neuromorphic devices","authors":"Shuai Wang, Mingrui Liu, Shunpeng Lu, Hang Zang, Zhiming Shi, Ke Jiang, Yuping Jia, Rui Sun, Bo Lai, Xiaojuan Sun, Dabing Li","doi":"10.1063/5.0300822","DOIUrl":"https://doi.org/10.1063/5.0300822","url":null,"abstract":"Embodied intelligence, which realizes adaptive behavior through dynamic physical interaction between an agent and its environment, relies critically on hardware capable of integrated perception, storage, and computation (PSC). Ferroelectric neuromorphic devices, which emulate synaptic functions, offer a promising path toward such PSC integration and toward overcoming the energy limitations of von Neumann architectures. However, incompatibility with mainstream semiconductor platforms has always hindered the practical application of traditional oxide ferroelectrics. Recently, wurtzite-structured nitride ferroelectrics have emerged as highly attractive candidates for neuromorphic devices, combining the merits of compatibility with mainstream semiconductor platforms, enhanced remanent polarization (Pr) and piezoelectric polarization, scalability to ultrathin thicknesses, high Curie temperature (Tc), and robust ferroelectric phase stability. While prior reviews have covered basic properties, growth methods, and memristive operation mechanisms of AlScN-based devices, achieving the deep integration of physical systems with artificial intelligence demands memristors with functionalities beyond mere storage and computation. A critical future direction involves embedding multisensory capabilities into neuromorphic devices to enable truly embodied intelligence. This review focuses on the application of wurtzite ferroelectrics in embodied intelligence neuromorphic devices. Given that neuromorphic computing is tightly linked to ferroelectric domain evolution and material properties, the domain dynamics of wurtzite ferroelectrics, including reverse domain nucleation and domain wall motion mechanisms during polarization switching, are systematically discussed. Additionally, we analyze the key factors influencing ferroelectric performance and their modulation strategies, which are critical for ensuring the functionality of neuromorphic devices. For device applications, we summarize the working principles and latest progress in neuromorphic devices, with particular emphasis on two-terminal memristors based on AlScN/n-GaN heterojunction and three-terminal memristors based on two-dimensional materials or two-dimensional electron gas channels, highlighting their potential to integrate sensing, memory, and computation within a single platform. Finally, we outline current challenges and future directions, aiming to provide insights for advancing wurtzite ferroelectrics in high-performance neuromorphic devices for embodied intelligence.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"33 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zui Yu, Liang Chu, Yanran Li, Honglin Song, Rong Lu, Leyong Jiang, Jun He, Jie Jiang
Traditional hardware systems struggle with implementing current artificial neural networks due to the waste of substantial computational resources on insignificant data. Hardware realization of sparse neural networks offers a significant solution because of their potential to concentrate solely on crucial data. However, these devices still face great challenges in signal encoding and attention-guided sparse capture. Herein, we demonstrate a large-scale sparse-capture neural network (SCNN) using vertical multichannel photoelectrochemical transistors, which are constructed from the ultrashort, tri-layer, oxygen-gradient-engineered indium-tin oxide channel with an approximately 15 nm thick. This device exhibits high sparsity at a low operating voltage of 3.0 V, facilitating dynamic neural connectivity and outstanding energy efficiency. The proposed SCNN achieves recognition accuracy exceeding 94% and reduces energy consumption by over 30%. Therefore, this work offers a promising avenue toward energy-efficient neuromorphic systems for edge AI, real-time sensing, and adaptive decision-making.
{"title":"Vertical oxygen-gradient-engineered photoelectrochemical transistors for efficient on-chip sparsity capture and neural network processing units","authors":"Zui Yu, Liang Chu, Yanran Li, Honglin Song, Rong Lu, Leyong Jiang, Jun He, Jie Jiang","doi":"10.1063/5.0302387","DOIUrl":"https://doi.org/10.1063/5.0302387","url":null,"abstract":"Traditional hardware systems struggle with implementing current artificial neural networks due to the waste of substantial computational resources on insignificant data. Hardware realization of sparse neural networks offers a significant solution because of their potential to concentrate solely on crucial data. However, these devices still face great challenges in signal encoding and attention-guided sparse capture. Herein, we demonstrate a large-scale sparse-capture neural network (SCNN) using vertical multichannel photoelectrochemical transistors, which are constructed from the ultrashort, tri-layer, oxygen-gradient-engineered indium-tin oxide channel with an approximately 15 nm thick. This device exhibits high sparsity at a low operating voltage of 3.0 V, facilitating dynamic neural connectivity and outstanding energy efficiency. The proposed SCNN achieves recognition accuracy exceeding 94% and reduces energy consumption by over 30%. Therefore, this work offers a promising avenue toward energy-efficient neuromorphic systems for edge AI, real-time sensing, and adaptive decision-making.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"88 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yinan Liu, Joseph P. Briggs, Meenakshi Singh, Carolyn A. Koh, P. Craig Taylor, Thomas Gennett, Michael Walker, Khalid Mateen, Moussa Kane, Reuben T. Collins
Silicon clathrates are crystalline, cage-like silicon allotropes with potential for unique optoelectronic applications. Here, we report a novel discovery in solid-state hydrogen storage using low-sodium type II silicon clathrate films that retain molecular hydrogen under ambient temperature and pressure. Hydrogen was introduced via deuterium plasma at moderate temperatures, forming D2 molecules within clathrate cages. The structure remains essentially intact, with minimal conversion to diamond-cubic silicon after incorporation and thermal release. Supporting evidence shows that only a small fraction of the incorporated deuterium forms SiD or NaD bonds, while the majority remains as molecular D2. Thermal desorption measurements indicate that most deuterium is released below 200 °C. This work introduces a fundamentally new storage mechanism based on molecular encapsulation rather than surface binding or chemisorption. Our findings establish silicon clathrates as the first known solid-state silicon-based material to stably store molecular hydrogen at ambient conditions and point the way toward capacity enhancement.
{"title":"Ambient-stable storage of molecular hydrogen in crystalline silicon clathrate","authors":"Yinan Liu, Joseph P. Briggs, Meenakshi Singh, Carolyn A. Koh, P. Craig Taylor, Thomas Gennett, Michael Walker, Khalid Mateen, Moussa Kane, Reuben T. Collins","doi":"10.1063/5.0299465","DOIUrl":"https://doi.org/10.1063/5.0299465","url":null,"abstract":"Silicon clathrates are crystalline, cage-like silicon allotropes with potential for unique optoelectronic applications. Here, we report a novel discovery in solid-state hydrogen storage using low-sodium type II silicon clathrate films that retain molecular hydrogen under ambient temperature and pressure. Hydrogen was introduced via deuterium plasma at moderate temperatures, forming D2 molecules within clathrate cages. The structure remains essentially intact, with minimal conversion to diamond-cubic silicon after incorporation and thermal release. Supporting evidence shows that only a small fraction of the incorporated deuterium forms SiD or NaD bonds, while the majority remains as molecular D2. Thermal desorption measurements indicate that most deuterium is released below 200 °C. This work introduces a fundamentally new storage mechanism based on molecular encapsulation rather than surface binding or chemisorption. Our findings establish silicon clathrates as the first known solid-state silicon-based material to stably store molecular hydrogen at ambient conditions and point the way toward capacity enhancement.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"102 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Copper metasilicate (CuSiO3) derived from mineral dioptase is a unique anisotropic compound with planar edge-sharing CuO4+2 “octahedra” interspaced by SiO4 tetrahedra running along [001] direction. Combined with multivalent Cu sites and Si, it provides a robust structure for electrocatalytic CO2 reduction (ECR) reactions. Unlike metallic Cu, widely studied for ECR initially, Cu-based materials have drawn more attention lately as they not only exhibit selective formation of products due to the presence of Cuδ+ (1 < δ < 2) sites, but also ensure structural stability. Herein, we study the electronic structure of the novel orthorhombic CuSiO3 in bulk, [100] and [020] surfaces. We then investigate stepwise ECR on the [100] surface of CuSiO3 due to its appropriate alignment of d-band center, suitable chemical structure, and active surface atoms. Furthermore, the spin-polarized studies show [100] planes of CuSiO3 are half-metallic and promising for ECR. The detailed analysis of various parallel reaction pathways of ECR and the calculated free energies shows that *CHO formation is the potential-determining step with an energy barrier of 0.58 eV. ECR investigation indicates that the most feasible CO2→CH3OH conversion occurs with the on-site magnetic moment (μB) ≈0.2 for Cu atoms, and the changes in Gibbs free energies are closely related to the variations of on-site μB of Cu atoms on CuSiO3 [100]. We studied how the Cu–O–Si interaction affects the reaction pathways, influencing formation of specific reaction intermediates, thereby leading to the most probable products. Due to the presence of abundant active surface sites with varying oxidation states, and higher conductivity, CuSiO3100 exhibits a reduced activation barrier and a favorable CO2 reduction to CH3OH.
{"title":"Role of Cu δ + sites for a favorable electrocatalytic CO2 reduction on CuSiO3 surface","authors":"Brajesh Rajesh Bhagat, Bidisa Das","doi":"10.1063/5.0284285","DOIUrl":"https://doi.org/10.1063/5.0284285","url":null,"abstract":"Copper metasilicate (CuSiO3) derived from mineral dioptase is a unique anisotropic compound with planar edge-sharing CuO4+2 “octahedra” interspaced by SiO4 tetrahedra running along [001] direction. Combined with multivalent Cu sites and Si, it provides a robust structure for electrocatalytic CO2 reduction (ECR) reactions. Unlike metallic Cu, widely studied for ECR initially, Cu-based materials have drawn more attention lately as they not only exhibit selective formation of products due to the presence of Cuδ+ (1 &lt; δ &lt; 2) sites, but also ensure structural stability. Herein, we study the electronic structure of the novel orthorhombic CuSiO3 in bulk, [100] and [020] surfaces. We then investigate stepwise ECR on the [100] surface of CuSiO3 due to its appropriate alignment of d-band center, suitable chemical structure, and active surface atoms. Furthermore, the spin-polarized studies show [100] planes of CuSiO3 are half-metallic and promising for ECR. The detailed analysis of various parallel reaction pathways of ECR and the calculated free energies shows that *CHO formation is the potential-determining step with an energy barrier of 0.58 eV. ECR investigation indicates that the most feasible CO2→CH3OH conversion occurs with the on-site magnetic moment (μB) ≈0.2 for Cu atoms, and the changes in Gibbs free energies are closely related to the variations of on-site μB of Cu atoms on CuSiO3 [100]. We studied how the Cu–O–Si interaction affects the reaction pathways, influencing formation of specific reaction intermediates, thereby leading to the most probable products. Due to the presence of abundant active surface sites with varying oxidation states, and higher conductivity, CuSiO3100 exhibits a reduced activation barrier and a favorable CO2 reduction to CH3OH.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"101 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145986386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Scaling field-effect transistors (FETs) into the sub-10-nm regime fundamentally alters the transport mechanism, challenging long-standing design rules. This study investigates monolayer Pt–WSe2–Pt FETs with channel lengths from 12 to 3 nm, quantifying the competition between semiclassical thermionic current and quantum tunneling. We show that quantum transport, as described by the Landauer formula, asymptotically approaches classical thermionic emission in the long-channel and high-temperature limit, in accordance with Richardson's law. In the high-temperature thermionic regime, the slope of log10(J/T) reflects the effective work function. A competition parameter ζ cleanly delineates the semiclassical-to-quantum transition, and two characteristic temperatures emerge: Top (minimizing JOFF), and Tc (thermionic onset). For Lch<9 nm, Top<300 K, and JOFF is tunneling-dominated; the 3 nm device remains tunneling-dominated up to 500 K and achieves a subthreshold swing overcoming the Boltzmann tyranny (BT) via the steep slope of τ(E). However, the short-channel effect also generates leakage current and makes the transistor difficult to turn off. For Lch≥9 nm, Top>300 K, and JOFF is thermionic-dominated, and the subthreshold swing approaches (BT/αin). Consequently, the ideal channel length for 2D FETs is Lch≈10 nm. These results provide criteria for selecting the optimal operating temperature and gate-voltage windows in miniaturizing 2D FETs, and pinpoint the crossover at which quantum tunneling current becomes comparable to semiclassical thermionic emission.
{"title":"Classical-to-quantum crossover in 2D TMD field-effect transistors: A first-principles study via sub-10 nm channel scaling beyond Boltzmann tyranny","authors":"Yu-Chang Chen, Chia-Yang Ling, Ken-Ming Lin","doi":"10.1063/5.0303607","DOIUrl":"https://doi.org/10.1063/5.0303607","url":null,"abstract":"Scaling field-effect transistors (FETs) into the sub-10-nm regime fundamentally alters the transport mechanism, challenging long-standing design rules. This study investigates monolayer Pt–WSe2–Pt FETs with channel lengths from 12 to 3 nm, quantifying the competition between semiclassical thermionic current and quantum tunneling. We show that quantum transport, as described by the Landauer formula, asymptotically approaches classical thermionic emission in the long-channel and high-temperature limit, in accordance with Richardson's law. In the high-temperature thermionic regime, the slope of log10(J/T) reflects the effective work function. A competition parameter ζ cleanly delineates the semiclassical-to-quantum transition, and two characteristic temperatures emerge: Top (minimizing JOFF), and Tc (thermionic onset). For Lch&lt;9 nm, Top&lt;300 K, and JOFF is tunneling-dominated; the 3 nm device remains tunneling-dominated up to 500 K and achieves a subthreshold swing overcoming the Boltzmann tyranny (BT) via the steep slope of τ(E). However, the short-channel effect also generates leakage current and makes the transistor difficult to turn off. For Lch≥9 nm, Top&gt;300 K, and JOFF is thermionic-dominated, and the subthreshold swing approaches (BT/αin). Consequently, the ideal channel length for 2D FETs is Lch≈10 nm. These results provide criteria for selecting the optimal operating temperature and gate-voltage windows in miniaturizing 2D FETs, and pinpoint the crossover at which quantum tunneling current becomes comparable to semiclassical thermionic emission.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"3 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145961845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Organic opto-spintronics has been receiving increasing attention due to the fascinating and diverse electrical, magnetic, and optical phenomena. The inherently weak spin–orbit coupling (SOC) in organic materials makes them ideal candidates for spin transport. However, the strong electron–phonon (e-p) coupling and hyperfine interactions would decrease the carrier mobility. In addition, complex phenomena such as singlet-triplet conversion, carrier recombination, and the existence of impurities and defects contribute to complex spin relaxation mechanisms. This review provides an overview of spin injection and transport processes in organic materials, with an emphasis on their spin-dependent optical responses. Common methods of light-controlled spin manipulation are reviewed, along with the interaction between photons and spins. Ultrafast optical techniques for spin control are also briefly discussed. This work aims to deepen our understanding of photon-spin coupling in organic systems and provide insights that may contribute to the advancement of organic opto-spintronics.
{"title":"Manipulating spins in organic and chiral systems: From injection and transport to photon control","authors":"Shilin Li, Wei Qin","doi":"10.1063/5.0303800","DOIUrl":"https://doi.org/10.1063/5.0303800","url":null,"abstract":"Organic opto-spintronics has been receiving increasing attention due to the fascinating and diverse electrical, magnetic, and optical phenomena. The inherently weak spin–orbit coupling (SOC) in organic materials makes them ideal candidates for spin transport. However, the strong electron–phonon (e-p) coupling and hyperfine interactions would decrease the carrier mobility. In addition, complex phenomena such as singlet-triplet conversion, carrier recombination, and the existence of impurities and defects contribute to complex spin relaxation mechanisms. This review provides an overview of spin injection and transport processes in organic materials, with an emphasis on their spin-dependent optical responses. Common methods of light-controlled spin manipulation are reviewed, along with the interaction between photons and spins. Ultrafast optical techniques for spin control are also briefly discussed. This work aims to deepen our understanding of photon-spin coupling in organic systems and provide insights that may contribute to the advancement of organic opto-spintronics.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"52 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145961897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Beatriz M. Gomes, Tomás Prior, Ângela Freitas, António B. Vale, Beatriz A. Maia, Hugo Lebre, Manuela C. Baptista, Raquel Dantas, M. Helena Braga
Ferroelectric materials are poised to drive the next technological leap through their emergent functionalities, including negative capacitance and resistance, charge accumulation without transport, and spontaneous polarization switching. The discovery of ferroionic material-systems that combine room-temperature ferroelectricity and fast ionic conductivity has opened an unprecedented avenue for multifunctional devices that merge the territories of electronics and ionics. These hybrid materials enable the direct coupling of ionic and electronic order parameters, allowing long-range electrostatic interactions, wireless field communication, and energy transduction across solid–solid and solid–air interfaces. Such capabilities offer potential solutions to long-standing challenges, including the Boltzmann limit in transistor subthreshold operation, voltage amplification without power dissipation, and nonvolatile polarization states with ionic reconfigurability. Beyond conventional applications, ferroionics support a new generation of quantum sensors and adaptive devices, spanning optical, electrical, mechanical, thermal, and magnetic domains. This review provides a comprehensive overview of the conceptual foundations, theoretical frameworks, and experimental progress underlying ferroionic systems, highlighting their role as a bridge between ferroelectrics, solid electrolytes, and correlated quantum materials. Finally, perspectives are offered on how ferroionic coupling may reshape device physics and enable sustainable, self-powered information and energy technologies.
{"title":"Ferroelectric and ferroionic multifunctional quantum sensors: Incursion into applications","authors":"Beatriz M. Gomes, Tomás Prior, Ângela Freitas, António B. Vale, Beatriz A. Maia, Hugo Lebre, Manuela C. Baptista, Raquel Dantas, M. Helena Braga","doi":"10.1063/5.0251263","DOIUrl":"https://doi.org/10.1063/5.0251263","url":null,"abstract":"Ferroelectric materials are poised to drive the next technological leap through their emergent functionalities, including negative capacitance and resistance, charge accumulation without transport, and spontaneous polarization switching. The discovery of ferroionic material-systems that combine room-temperature ferroelectricity and fast ionic conductivity has opened an unprecedented avenue for multifunctional devices that merge the territories of electronics and ionics. These hybrid materials enable the direct coupling of ionic and electronic order parameters, allowing long-range electrostatic interactions, wireless field communication, and energy transduction across solid–solid and solid–air interfaces. Such capabilities offer potential solutions to long-standing challenges, including the Boltzmann limit in transistor subthreshold operation, voltage amplification without power dissipation, and nonvolatile polarization states with ionic reconfigurability. Beyond conventional applications, ferroionics support a new generation of quantum sensors and adaptive devices, spanning optical, electrical, mechanical, thermal, and magnetic domains. This review provides a comprehensive overview of the conceptual foundations, theoretical frameworks, and experimental progress underlying ferroionic systems, highlighting their role as a bridge between ferroelectrics, solid electrolytes, and correlated quantum materials. Finally, perspectives are offered on how ferroionic coupling may reshape device physics and enable sustainable, self-powered information and energy technologies.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"95 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145961994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Quantum sensing, leveraging the principles of quantum mechanics, has revolutionized the field of precision measurement by achieving sensitivities beyond the classical limits. Among the various platforms for quantum sensing, cavity optomechanics has emerged as a particularly promising field. It studies the interaction between light and mechanical resonators within high-Q optical cavities, providing unique opportunities for enhancing measurement precision and sensitivity in quantum sensing. With advancements in technology, the range of applications for cavity optomechanics in quantum sensing is expanding rapidly. Particularly, the integration of optoelectronic technologies and miniaturization techniques holds promise for the development of more compact, efficient, and scalable quantum sensors. Quantum sensing with cavity optomechanics has been extensively studied and has progressed enormously over the past decades. This paper provides a systematic review of research on quantum sensing with cavity optomechanics, starting from the fundamental principles of optomechanical coupling, to the achievement of quantum ground-state cooling of mechanical oscillators and the preparation of basic quantum states, and then to the mechanisms of quantum sensing based on cavity optomechanics. Furthermore, we survey recent advancements in quantum sensing utilizing cavity optomechanics, including the enhancement of optomechanical sensing through the use of entanglement, squeezing, and quantum exceptional points. Finally, perspectives and opportunities for future developments of this field are provided.
{"title":"Quantum sensing with cavity optomechanics","authors":"Zeng-Xing Liu, Xiao-Jie Zuo, Jia-Xin Peng, Hao Xiong","doi":"10.1063/5.0237048","DOIUrl":"https://doi.org/10.1063/5.0237048","url":null,"abstract":"Quantum sensing, leveraging the principles of quantum mechanics, has revolutionized the field of precision measurement by achieving sensitivities beyond the classical limits. Among the various platforms for quantum sensing, cavity optomechanics has emerged as a particularly promising field. It studies the interaction between light and mechanical resonators within high-Q optical cavities, providing unique opportunities for enhancing measurement precision and sensitivity in quantum sensing. With advancements in technology, the range of applications for cavity optomechanics in quantum sensing is expanding rapidly. Particularly, the integration of optoelectronic technologies and miniaturization techniques holds promise for the development of more compact, efficient, and scalable quantum sensors. Quantum sensing with cavity optomechanics has been extensively studied and has progressed enormously over the past decades. This paper provides a systematic review of research on quantum sensing with cavity optomechanics, starting from the fundamental principles of optomechanical coupling, to the achievement of quantum ground-state cooling of mechanical oscillators and the preparation of basic quantum states, and then to the mechanisms of quantum sensing based on cavity optomechanics. Furthermore, we survey recent advancements in quantum sensing utilizing cavity optomechanics, including the enhancement of optomechanical sensing through the use of entanglement, squeezing, and quantum exceptional points. Finally, perspectives and opportunities for future developments of this field are provided.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"216 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145961993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Seokho Kim, Jiyoun Kim, Jiyoung Boo, Junsung Lee, Bo Hyun Kim, Bong Sup Shim, Jinho Choi, Dong Hyuk Park, Healin Im
Purely organic emitters can generate long-lived phosphorescence at room temperature. With their extremely low toxicity and environmentally friendly processes, their extended emissive decay, often lasting several milliseconds, combined with high quantum yields makes them promising for a range of emission and sensory platforms. Room temperature phosphorescence (RTP) is highly dependent on both the crystallinity and geometry of organic crystals, which are significantly influenced by the surrounding environments. Key factors include organic solvents in which organic emitters are dissolved or dispersed, the surface properties where the organic crystal is grown, and nearby adjacent emitters. This work presents a strategy for forming nanorod-shaped purely organic chromophores that exhibit RTP through hybridization with host molecules on an eco-friendly cellulose membrane. Tuning the crystal morphology significantly influences the photophysical properties and enhances phosphorescence efficiency while enabling waveguided emission along a one-dimensional geometry. Finally, to exploit the ultralong phosphorescent lifetime in the millisecond regime, phosphorescence resonance energy transfer was achieved by coupling with Rhodamine B, an organic fluorophore, highlighting the potential for tunable emission through the formation of an amorphous interface at the contact region.
{"title":"Triplet-mediated waveguiding and energy transfer in organic phosphors on cellulose","authors":"Seokho Kim, Jiyoun Kim, Jiyoung Boo, Junsung Lee, Bo Hyun Kim, Bong Sup Shim, Jinho Choi, Dong Hyuk Park, Healin Im","doi":"10.1063/5.0302351","DOIUrl":"https://doi.org/10.1063/5.0302351","url":null,"abstract":"Purely organic emitters can generate long-lived phosphorescence at room temperature. With their extremely low toxicity and environmentally friendly processes, their extended emissive decay, often lasting several milliseconds, combined with high quantum yields makes them promising for a range of emission and sensory platforms. Room temperature phosphorescence (RTP) is highly dependent on both the crystallinity and geometry of organic crystals, which are significantly influenced by the surrounding environments. Key factors include organic solvents in which organic emitters are dissolved or dispersed, the surface properties where the organic crystal is grown, and nearby adjacent emitters. This work presents a strategy for forming nanorod-shaped purely organic chromophores that exhibit RTP through hybridization with host molecules on an eco-friendly cellulose membrane. Tuning the crystal morphology significantly influences the photophysical properties and enhances phosphorescence efficiency while enabling waveguided emission along a one-dimensional geometry. Finally, to exploit the ultralong phosphorescent lifetime in the millisecond regime, phosphorescence resonance energy transfer was achieved by coupling with Rhodamine B, an organic fluorophore, highlighting the potential for tunable emission through the formation of an amorphous interface at the contact region.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"20 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145894091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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