The Casimir force, which arises from quantum electrodynamic fluctuations, manifests as an attraction between metallic surfaces spaced mere hundreds of nanometers apart. As contemporary device architectures scale down to the nano- and microscales, quantum phenomena exert increasing influence on their behaviors. Nano- and microelectromechanical systems frequently encounter issues such as components adhering or collapsing due to the typically attractive Casimir interactions. Consequently, significant efforts have been devoted to manipulating Casimir forces, aiming to transition them from attractive to repulsive. This ability holds promise for mitigating component collapse in nanodevices and facilitating the realization of quantum levitation and ultralow friction devices. Four primary strategies have been proposed for engineering repulsive Casimir forces: employing liquid media, magnetic materials, thermodynamic nonequilibrium conditions, and specialized geometries. In this review, we examine these approaches for engineering repulsive Casimir forces, analyzing their experimental feasibility, and discussing potential implementations.
{"title":"Opportunities and challenges involving repulsive Casimir forces in nanotechnology","authors":"C. Shelden, B. Spreng, J. N. Munday","doi":"10.1063/5.0218274","DOIUrl":"https://doi.org/10.1063/5.0218274","url":null,"abstract":"The Casimir force, which arises from quantum electrodynamic fluctuations, manifests as an attraction between metallic surfaces spaced mere hundreds of nanometers apart. As contemporary device architectures scale down to the nano- and microscales, quantum phenomena exert increasing influence on their behaviors. Nano- and microelectromechanical systems frequently encounter issues such as components adhering or collapsing due to the typically attractive Casimir interactions. Consequently, significant efforts have been devoted to manipulating Casimir forces, aiming to transition them from attractive to repulsive. This ability holds promise for mitigating component collapse in nanodevices and facilitating the realization of quantum levitation and ultralow friction devices. Four primary strategies have been proposed for engineering repulsive Casimir forces: employing liquid media, magnetic materials, thermodynamic nonequilibrium conditions, and specialized geometries. In this review, we examine these approaches for engineering repulsive Casimir forces, analyzing their experimental feasibility, and discussing potential implementations.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"14 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142763447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The evolution of power and radiofrequency electronics enters a new era with (ultra)wide bandgap semiconductors such as GaN, SiC, and β-Ga2O3, driving significant advancements across various technologies. The elevated breakdown voltage and minimal on-resistance result in size-compact and energy-efficient devices. However, effective thermal management poses a critical challenge, particularly when pushing devices to operate at their electronic limits for maximum output power. To address these thermal hurdles, comprehensive studies into thermal conduction within semiconductor heterostructures are essential. This review offers a comprehensive overview of recent progress in (ultra)wide bandgap semiconductor heterostructures dedicated to electronics cooling and are structured into four sections. Part 1 summarizes the material growth and thermal properties of (ultra)wide bandgap semiconductor heterostructures. Part 2 discusses heterogeneous integration techniques and thermal boundary conductance (TBC) of the bonded interfaces. Part 3 focuses on the research of TBC, including the progress in thermal characterization, experimental and theoretical enhancement, and the fundamental understanding of TBC. Parts 4 shifts the focus to electronic devices, presenting research on the cooling effects of these heterostructures through simulations and experiments. Finally, this review also identifies objectives, challenges, and potential avenues for future research. It aims to drive progress in electronics cooling through novel materials development, innovative integration techniques, new device designs, and advanced thermal characterization. Addressing these challenges and fostering continued progress hold the promise of realizing high-performance, high output power, and highly reliable electronics operating at the electronic limits.
{"title":"(Ultra)wide bandgap semiconductor heterostructures for electronics cooling","authors":"Zhe Cheng, Zifeng Huang, Jinchi Sun, Jia Wang, Tianli Feng, Kazuki Ohnishi, Jianbo Liang, Hiroshi Amano, Ru Huang","doi":"10.1063/5.0185305","DOIUrl":"https://doi.org/10.1063/5.0185305","url":null,"abstract":"The evolution of power and radiofrequency electronics enters a new era with (ultra)wide bandgap semiconductors such as GaN, SiC, and β-Ga2O3, driving significant advancements across various technologies. The elevated breakdown voltage and minimal on-resistance result in size-compact and energy-efficient devices. However, effective thermal management poses a critical challenge, particularly when pushing devices to operate at their electronic limits for maximum output power. To address these thermal hurdles, comprehensive studies into thermal conduction within semiconductor heterostructures are essential. This review offers a comprehensive overview of recent progress in (ultra)wide bandgap semiconductor heterostructures dedicated to electronics cooling and are structured into four sections. Part 1 summarizes the material growth and thermal properties of (ultra)wide bandgap semiconductor heterostructures. Part 2 discusses heterogeneous integration techniques and thermal boundary conductance (TBC) of the bonded interfaces. Part 3 focuses on the research of TBC, including the progress in thermal characterization, experimental and theoretical enhancement, and the fundamental understanding of TBC. Parts 4 shifts the focus to electronic devices, presenting research on the cooling effects of these heterostructures through simulations and experiments. Finally, this review also identifies objectives, challenges, and potential avenues for future research. It aims to drive progress in electronics cooling through novel materials development, innovative integration techniques, new device designs, and advanced thermal characterization. Addressing these challenges and fostering continued progress hold the promise of realizing high-performance, high output power, and highly reliable electronics operating at the electronic limits.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"34 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Melike Erdi, Jesse Kapeghian, Patrick Hays, Medha Dandu, Daria D. Blach, Mohammed Sayyad, Jan Kopaczek, Renee Sailus, Archana Raja, Sandhya Susarla, Antia S. Botana, Seth Ariel Tongay
Chiral materials, known for their unique structural and quantum properties, have garnered significant interest, with InSeI emerging as a promising chiral topologically trivial insulator. In this study, we introduce a scalable Bridgman crystal growth technique to synthesize large, environmentally stable single crystals of InSeI, achieving centimeter-sized chiral crystals with superior quality. Notably, this work marks the first report of photoluminescence (PL) emission from exfoliated InSeI chiral chains, alongside a detailed exploration of their polarization-dependent optical and phononic properties. Our Bridgman-grown crystals exhibit excellent structural integrity, enhanced exfoliation characteristics, and increased resistance to light-induced degradation compared to those produced by traditional solid-state methods. A microscopy analysis confirms the distinct chiral structure of InSeI, and the first in situ nanometer spatial resolution electron energy loss spectroscopy measurements establish a bandgap of 2.08 eV, consistent with the cryogenic PL emission peak. Angle-resolved Raman spectroscopy, combined with calculated vibrational properties, identifies five distinct frequency regions in the Raman modes, predominantly associated with In-, In-I, In-Se-I, and Se-atomic motions, with significant intensity variations under different polarization orientations. This study not only offers a practical method for synthesizing high-quality InSeI but also provides the first comprehensive experimental insights into its unique optical and vibrational properties, significantly advancing the understanding of chiral material systems.
{"title":"Structural and angle-resolved optical and vibrational properties of chiral trivial insulator InSeI","authors":"Melike Erdi, Jesse Kapeghian, Patrick Hays, Medha Dandu, Daria D. Blach, Mohammed Sayyad, Jan Kopaczek, Renee Sailus, Archana Raja, Sandhya Susarla, Antia S. Botana, Seth Ariel Tongay","doi":"10.1063/5.0219184","DOIUrl":"https://doi.org/10.1063/5.0219184","url":null,"abstract":"Chiral materials, known for their unique structural and quantum properties, have garnered significant interest, with InSeI emerging as a promising chiral topologically trivial insulator. In this study, we introduce a scalable Bridgman crystal growth technique to synthesize large, environmentally stable single crystals of InSeI, achieving centimeter-sized chiral crystals with superior quality. Notably, this work marks the first report of photoluminescence (PL) emission from exfoliated InSeI chiral chains, alongside a detailed exploration of their polarization-dependent optical and phononic properties. Our Bridgman-grown crystals exhibit excellent structural integrity, enhanced exfoliation characteristics, and increased resistance to light-induced degradation compared to those produced by traditional solid-state methods. A microscopy analysis confirms the distinct chiral structure of InSeI, and the first in situ nanometer spatial resolution electron energy loss spectroscopy measurements establish a bandgap of 2.08 eV, consistent with the cryogenic PL emission peak. Angle-resolved Raman spectroscopy, combined with calculated vibrational properties, identifies five distinct frequency regions in the Raman modes, predominantly associated with In-, In-I, In-Se-I, and Se-atomic motions, with significant intensity variations under different polarization orientations. This study not only offers a practical method for synthesizing high-quality InSeI but also provides the first comprehensive experimental insights into its unique optical and vibrational properties, significantly advancing the understanding of chiral material systems.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"105 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142696886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wearable sensors capable of simultaneous monitoring of multiple physiological markers have the potential to dramatically reduce healthcare cost through early detection of diseases and accelerating rehabilitation processes. These skin-like sensors can deliver significant benefits thanks to their ability to continuously track various physiological indicators over extended periods. However, due to the high sensitivities of soft sensors to multiple stimuli, decoupling the effects of various physical stimuli associated with accurately pinpointing the contributions of individual physiological markers remains a huge challenge. This article aims to provide a comprehensive review of recent advances in multifunctional, skin-like wearable sensors, with a particular emphasis on the mechanisms of signal transduction, microengineering designs, and their diverse applications in both health monitoring and human–machine interactions. It elaborates on the operational principles of various wearable sensors, such as triboelectric, resistive, piezoelectric, and capacitive sensors, each uniquely adept at detecting a range of stimuli. This article also examines recent advances in conceptualizations and methodologies for isolating specific stimuli from the mix of multiple physiological signals. Furthermore, this review highlights potential applications of these multimodal skin-like wearable sensors. Finally, opportunities and challenges facing multimodal wearable sensors are also discussed, exploring their potential in wearable intelligent systems tailored for diverse applications.
{"title":"Recent advances in multimodal skin-like wearable sensors","authors":"Shuying Wu, Zhao Sha, Liao Wu, Hoang-Phuong Phan, Shuai He, Jianbo Tang, Jiangtao Xu, Dewei Chu, Chun H. Wang, Shuhua Peng","doi":"10.1063/5.0217328","DOIUrl":"https://doi.org/10.1063/5.0217328","url":null,"abstract":"Wearable sensors capable of simultaneous monitoring of multiple physiological markers have the potential to dramatically reduce healthcare cost through early detection of diseases and accelerating rehabilitation processes. These skin-like sensors can deliver significant benefits thanks to their ability to continuously track various physiological indicators over extended periods. However, due to the high sensitivities of soft sensors to multiple stimuli, decoupling the effects of various physical stimuli associated with accurately pinpointing the contributions of individual physiological markers remains a huge challenge. This article aims to provide a comprehensive review of recent advances in multifunctional, skin-like wearable sensors, with a particular emphasis on the mechanisms of signal transduction, microengineering designs, and their diverse applications in both health monitoring and human–machine interactions. It elaborates on the operational principles of various wearable sensors, such as triboelectric, resistive, piezoelectric, and capacitive sensors, each uniquely adept at detecting a range of stimuli. This article also examines recent advances in conceptualizations and methodologies for isolating specific stimuli from the mix of multiple physiological signals. Furthermore, this review highlights potential applications of these multimodal skin-like wearable sensors. Finally, opportunities and challenges facing multimodal wearable sensors are also discussed, exploring their potential in wearable intelligent systems tailored for diverse applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"126 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142673082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Quanhong Chang, Wei Chen, Fudu Xing, Wanhua Li, Xun Peng, Weijie Du, Huishan Wang, Guina Xiao, Lei Huang
The development of neuromorphic systems necessitates the use of memcapacitors that can adapt to optoelectronic modulation. Two-dimensional (2D) materials with atomically thin features and their derived heterostructures are able to allow for controlling local transfer of charge carrier but reports on 2D materials-enabled capacitive-type photoelectric synapses have not been experimentally exploited yet. Herein, MXene-TiO2 heterostructured iontronic neural devices based on ion-dynamic capacitance enabling optoelectronic modulation are designed. According to the electrochemical insight, under UV light illustration, photoexcited electrons in TiO2 flow to MXene, leading to the localized accumulation of electrons as the trapping center and thus inducing the embedding of H+ for participating in the pseudo-intercalation. On removing the UV light, a part of trapped H+ are not instantly returned to the initial state. As a result, this memcapacitor features hysteresis ion-dynamic capacitance under optoelectronic modulation. Through assessing its applicability to neuromorphic computing, this memcapacitor achieves the high recognition accuracy (93.5%) of handwritten digits by recognizing and sharpening the input signal trajectory.
{"title":"MXene-TiO2 heterostructured iontronic neural devices based on ion-dynamic capacitance enabling optoelectronic modulation","authors":"Quanhong Chang, Wei Chen, Fudu Xing, Wanhua Li, Xun Peng, Weijie Du, Huishan Wang, Guina Xiao, Lei Huang","doi":"10.1063/5.0232001","DOIUrl":"https://doi.org/10.1063/5.0232001","url":null,"abstract":"The development of neuromorphic systems necessitates the use of memcapacitors that can adapt to optoelectronic modulation. Two-dimensional (2D) materials with atomically thin features and their derived heterostructures are able to allow for controlling local transfer of charge carrier but reports on 2D materials-enabled capacitive-type photoelectric synapses have not been experimentally exploited yet. Herein, MXene-TiO2 heterostructured iontronic neural devices based on ion-dynamic capacitance enabling optoelectronic modulation are designed. According to the electrochemical insight, under UV light illustration, photoexcited electrons in TiO2 flow to MXene, leading to the localized accumulation of electrons as the trapping center and thus inducing the embedding of H+ for participating in the pseudo-intercalation. On removing the UV light, a part of trapped H+ are not instantly returned to the initial state. As a result, this memcapacitor features hysteresis ion-dynamic capacitance under optoelectronic modulation. Through assessing its applicability to neuromorphic computing, this memcapacitor achieves the high recognition accuracy (93.5%) of handwritten digits by recognizing and sharpening the input signal trajectory.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"14 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142673081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Amrito Bhattacharjee, Hongbo Jiang, Lu Hua Li, Shaoming Huang, Ying Ian Chen, Qiran Cai
The rapid progress of high-performance microelectronic devices underscores the urgent necessity to develop materials possessing superior thermal conductivity for effectively dissipating heat in cutting-edge electronics. Boron nitride nanosheets (BNNSs) have garnered significant attention due to their exceptional thermal conductivity, combined with electrical insulation and low thermal expansion coefficient, offering a promising solution to heat-related challenges in electronic devices. While BNNSs share some common thermal behaviors with other two-dimensional (2D) materials, they also exhibit unique characteristics. For instance, BNNSs exhibit larger isotope disorders compared to graphene, yet their isotope enhancement in thermal conductivity is lower than that of their carbon counterpart. This review provides an overview of the thermal transport properties and mechanisms of BNNSs explored over the past decade, beginning with a brief introduction to the basic of thermal conductivity. It then delves into the thermal transport mechanisms in BNNSs, highlighting factors impacting the in-plane thermal conductivity of BNNSs, as well as the cross-plane thermal conductivity and the factors influencing it. Finally, the review discusses challenges associated with BNNS thermal conductivity measurement and outlines potential future research avenues.
{"title":"Thermal transport property of boron nitride nanosheets","authors":"Amrito Bhattacharjee, Hongbo Jiang, Lu Hua Li, Shaoming Huang, Ying Ian Chen, Qiran Cai","doi":"10.1063/5.0213741","DOIUrl":"https://doi.org/10.1063/5.0213741","url":null,"abstract":"The rapid progress of high-performance microelectronic devices underscores the urgent necessity to develop materials possessing superior thermal conductivity for effectively dissipating heat in cutting-edge electronics. Boron nitride nanosheets (BNNSs) have garnered significant attention due to their exceptional thermal conductivity, combined with electrical insulation and low thermal expansion coefficient, offering a promising solution to heat-related challenges in electronic devices. While BNNSs share some common thermal behaviors with other two-dimensional (2D) materials, they also exhibit unique characteristics. For instance, BNNSs exhibit larger isotope disorders compared to graphene, yet their isotope enhancement in thermal conductivity is lower than that of their carbon counterpart. This review provides an overview of the thermal transport properties and mechanisms of BNNSs explored over the past decade, beginning with a brief introduction to the basic of thermal conductivity. It then delves into the thermal transport mechanisms in BNNSs, highlighting factors impacting the in-plane thermal conductivity of BNNSs, as well as the cross-plane thermal conductivity and the factors influencing it. Finally, the review discusses challenges associated with BNNS thermal conductivity measurement and outlines potential future research avenues.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"1 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142637515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Recently, the rapid development of flexible electronic materials and devices has profoundly influenced various aspects of social development. Flexible magnetoelectric systems (FMESs), leveraging magnetoelectric coupling, hold vast potential applications in the fields of flexible sensing, memory storage, biomedicine, energy harvesting, and soft robotics. Consequently, they have emerged as a significant branch within the realm of flexible electronic devices. According to its working principle, FMES are divided into three categories: FMES based on magnetodeformation and piezoelectric effects, FMES based on giant magnetoresistive effect, and FMES based on electromagnetic induction. Although some articles have reviewed the first two types of FMES, there is a lack of systematic introduction of the FMES based on electromagnetic induction in existing studies, especially the development history and research status of the three types of FMES. Therefore, this paper systematically reviews the development history and research status of these three kinds of FMES and reveals the working principle and mode of the flexible magnetoelectric system from the perspective of the force-electricity-magnetism coupling mode. In addition, the material selection criteria, device manufacturing methods, and application fields of the FMES are also introduced. Finally, this review delves into the challenges and opportunities confronting the development of FMES, exploring the future development directions. This review aims to establish a theoretical foundation and provide methodological strategies for future research on FMES. It is anticipated to promptly address the current gap in this research field and facilitate the development of the flexible electronic family.
{"title":"Flexible magnetoelectric systems: Types, principles, materials, preparation and application","authors":"Shanfei Zhang, Zhuofan Li, Yizhuo Xu, Bin Su","doi":"10.1063/5.0220902","DOIUrl":"https://doi.org/10.1063/5.0220902","url":null,"abstract":"Recently, the rapid development of flexible electronic materials and devices has profoundly influenced various aspects of social development. Flexible magnetoelectric systems (FMESs), leveraging magnetoelectric coupling, hold vast potential applications in the fields of flexible sensing, memory storage, biomedicine, energy harvesting, and soft robotics. Consequently, they have emerged as a significant branch within the realm of flexible electronic devices. According to its working principle, FMES are divided into three categories: FMES based on magnetodeformation and piezoelectric effects, FMES based on giant magnetoresistive effect, and FMES based on electromagnetic induction. Although some articles have reviewed the first two types of FMES, there is a lack of systematic introduction of the FMES based on electromagnetic induction in existing studies, especially the development history and research status of the three types of FMES. Therefore, this paper systematically reviews the development history and research status of these three kinds of FMES and reveals the working principle and mode of the flexible magnetoelectric system from the perspective of the force-electricity-magnetism coupling mode. In addition, the material selection criteria, device manufacturing methods, and application fields of the FMES are also introduced. Finally, this review delves into the challenges and opportunities confronting the development of FMES, exploring the future development directions. This review aims to establish a theoretical foundation and provide methodological strategies for future research on FMES. It is anticipated to promptly address the current gap in this research field and facilitate the development of the flexible electronic family.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"42 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142609974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Volatile organic compounds (VOCs) play a crucial role in affecting health, environmental integrity, and industrial operations, from air quality to medical diagnostics. The need for highly sensitive and selective detection of these compounds has spurred innovation in sensor technologies. This editorial introduces a special collection of articles in Applied Physics Reviews, exploring the latest advancements in VOC detection technologies. The featured works cover a range of innovations, including electrostatically formed nanowires, chiral liquid crystals, and graphene-based sensors enhanced by machine learning. Together, these articles highlight the dynamic progress in VOC detection, striving for improved sensitivity, selectivity, and real-world applicability. This special collection not only showcases pioneering research but also provides valuable insights into future trends and potential applications in the field.
{"title":"Advances in volatile organic compounds detection: From fundamental research to real-world applications","authors":"Hossam Haick","doi":"10.1063/5.0230205","DOIUrl":"https://doi.org/10.1063/5.0230205","url":null,"abstract":"Volatile organic compounds (VOCs) play a crucial role in affecting health, environmental integrity, and industrial operations, from air quality to medical diagnostics. The need for highly sensitive and selective detection of these compounds has spurred innovation in sensor technologies. This editorial introduces a special collection of articles in Applied Physics Reviews, exploring the latest advancements in VOC detection technologies. The featured works cover a range of innovations, including electrostatically formed nanowires, chiral liquid crystals, and graphene-based sensors enhanced by machine learning. Together, these articles highlight the dynamic progress in VOC detection, striving for improved sensitivity, selectivity, and real-world applicability. This special collection not only showcases pioneering research but also provides valuable insights into future trends and potential applications in the field.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"19 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142599528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Single-photon terahertz (THz) detection is one of the most demanding technologies for a variety of fields and could lead to many breakthroughs. Although significant progress has been made in the past two decades, operating it at room temperature still remains a great challenge. Here, we demonstrate, for the first time, a room temperature THz detector at single-photon levels based on nonlinear wave mixing in thermal Rydberg atomic vapor. The low-energy THz photons are coherently upconverted to high-energy optical photons via a nondegenerate Rydberg state involved in a six-wave mixing process, and therefore, single-photon THz detection is achieved by a conventional optical single-photon counting module. The noise equivalent power of such a detector reaches 9.5 × 10−19 W/Hz1/2, which is more than four orders of magnitude lower than the state-of-the-art room temperature THz detectors. The optimum quantum efficiency of the whole-wave mixing process is about 4.3%, with 40.6 dB dynamic range, and the maximum conversion bandwidth is 172 MHz, which is all-optically controllable. The developed fast and continuous-wave single-photon THz detector at room temperature operation has a great potential for portability and chip-scale integration, and could be revolutionary for a wide range of applications in remote sensing, wireless communication, biomedical diagnostics, and quantum optics.
{"title":"Room temperature single-photon terahertz detection with thermal Rydberg atoms","authors":"Danyang Li, Zhengyang Bai, Xiaoliang Zuo, Yuelong Wu, Jiteng Sheng, Haibin Wu","doi":"10.1063/5.0219879","DOIUrl":"https://doi.org/10.1063/5.0219879","url":null,"abstract":"Single-photon terahertz (THz) detection is one of the most demanding technologies for a variety of fields and could lead to many breakthroughs. Although significant progress has been made in the past two decades, operating it at room temperature still remains a great challenge. Here, we demonstrate, for the first time, a room temperature THz detector at single-photon levels based on nonlinear wave mixing in thermal Rydberg atomic vapor. The low-energy THz photons are coherently upconverted to high-energy optical photons via a nondegenerate Rydberg state involved in a six-wave mixing process, and therefore, single-photon THz detection is achieved by a conventional optical single-photon counting module. The noise equivalent power of such a detector reaches 9.5 × 10−19 W/Hz1/2, which is more than four orders of magnitude lower than the state-of-the-art room temperature THz detectors. The optimum quantum efficiency of the whole-wave mixing process is about 4.3%, with 40.6 dB dynamic range, and the maximum conversion bandwidth is 172 MHz, which is all-optically controllable. The developed fast and continuous-wave single-photon THz detector at room temperature operation has a great potential for portability and chip-scale integration, and could be revolutionary for a wide range of applications in remote sensing, wireless communication, biomedical diagnostics, and quantum optics.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"46 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142597246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jibo Xu, Xiaoyan Zhang, Xia Liu, Ming Wu, Junzhe Liu, Zhiyu Liu, Meiyue Li, Yuhao Yue, Yawen Xu, Chenyu Dong, Weijie Zheng, Lin Zhu, Yanqiang Cao, Chunyan Zheng, Jianyi Liu, Aidong Li, Di Wu, Lixue Zhang, Zheng Wen
Recently, the flexoelectric effect has triggered considerable interest in energy-related applications, such as flexo-actuation, flexo-photovoltaic, and flexo-catalysis, because of its ubiquitous feature allowing the creation of electric polarity, i.e., the flexoelectric polarization (Pflexo), in non-polar materials by strain gradient. Here, we show a flexoelectric strategy in electrocatalytic water splitting. Remarkably enhanced oxygen evolution reaction (OER) properties are achieved in strain-gradient LaFeO3 (LFO) thin-film heterostructures owing to the promotion of kinetic processes by Pflexo. The improved OER is demonstrated by increased current density of ∼300% in linear sweep voltammetry and lowered charge transfer resistance by two orders of magnitude in electrochemical impedance spectroscopy. These are ascribed to the flexoelectric-induced downward bending of the LFO band, as revealed by density functional theory calculations and band structure measurements. With Pflexo in the thin-film heterostructure catalysts, the adsorption of hydroxyl ions is strengthened on the polar LFO surface, and the transfer of electrons is accelerated from the reactants/key intermediates to the catalyst across the band-tilted LFO layer. These findings indicate the significance of flexoelectric effect in OER kinetics and open a new perspective for exploiting catalytic mechanisms and performances in water splitting.
最近，挠电效应在与能源相关的应用中引发了相当大的兴趣，如挠电致动、挠电光伏和挠电催化，因为其无处不在的特性允许通过应变梯度在非极性材料中产生电极性，即挠电极化（Pflexo）。在此，我们展示了电催化水分离中的柔电策略。由于 Pflexo 对动力学过程的促进作用，应变梯度 LaFeO3（LFO）薄膜异质结构的氧进化反应（OER）性能显著增强。在线性扫描伏安法中，电流密度增加了 300%，在电化学阻抗光谱法中，电荷转移电阻降低了两个数量级，这些都证明了 OER 的改善。密度泛函理论计算和带状结构测量结果表明，这些都归因于柔电引起的 LFO 带向下弯曲。在薄膜异质结构催化剂中加入 Pflexo 后，极性 LFO 表面对羟基离子的吸附得到加强，电子从反应物/关键中间产物到催化剂的转移加速，并穿过带倾斜的 LFO 层。这些发现表明了挠电效应在 OER 动力学中的重要性，并为利用催化机制和水分离性能开辟了一个新的视角。
{"title":"Enhanced oxygen evolution reaction in flexoelectric thin-film heterostructures","authors":"Jibo Xu, Xiaoyan Zhang, Xia Liu, Ming Wu, Junzhe Liu, Zhiyu Liu, Meiyue Li, Yuhao Yue, Yawen Xu, Chenyu Dong, Weijie Zheng, Lin Zhu, Yanqiang Cao, Chunyan Zheng, Jianyi Liu, Aidong Li, Di Wu, Lixue Zhang, Zheng Wen","doi":"10.1063/5.0215284","DOIUrl":"https://doi.org/10.1063/5.0215284","url":null,"abstract":"Recently, the flexoelectric effect has triggered considerable interest in energy-related applications, such as flexo-actuation, flexo-photovoltaic, and flexo-catalysis, because of its ubiquitous feature allowing the creation of electric polarity, i.e., the flexoelectric polarization (Pflexo), in non-polar materials by strain gradient. Here, we show a flexoelectric strategy in electrocatalytic water splitting. Remarkably enhanced oxygen evolution reaction (OER) properties are achieved in strain-gradient LaFeO3 (LFO) thin-film heterostructures owing to the promotion of kinetic processes by Pflexo. The improved OER is demonstrated by increased current density of ∼300% in linear sweep voltammetry and lowered charge transfer resistance by two orders of magnitude in electrochemical impedance spectroscopy. These are ascribed to the flexoelectric-induced downward bending of the LFO band, as revealed by density functional theory calculations and band structure measurements. With Pflexo in the thin-film heterostructure catalysts, the adsorption of hydroxyl ions is strengthened on the polar LFO surface, and the transfer of electrons is accelerated from the reactants/key intermediates to the catalyst across the band-tilted LFO layer. These findings indicate the significance of flexoelectric effect in OER kinetics and open a new perspective for exploiting catalytic mechanisms and performances in water splitting.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"9 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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