Beatriz M. Gomes, Tomás Prior, Ângela Freitas, António B. Vale, Beatriz A. Maia, Hugo Lebre, Manuela C. Baptista, Raquel Dantas, M. Helena Braga
Ferroelectric materials are poised to drive the next technological leap through their emergent functionalities, including negative capacitance and resistance, charge accumulation without transport, and spontaneous polarization switching. The discovery of ferroionic material-systems that combine room-temperature ferroelectricity and fast ionic conductivity has opened an unprecedented avenue for multifunctional devices that merge the territories of electronics and ionics. These hybrid materials enable the direct coupling of ionic and electronic order parameters, allowing long-range electrostatic interactions, wireless field communication, and energy transduction across solid–solid and solid–air interfaces. Such capabilities offer potential solutions to long-standing challenges, including the Boltzmann limit in transistor subthreshold operation, voltage amplification without power dissipation, and nonvolatile polarization states with ionic reconfigurability. Beyond conventional applications, ferroionics support a new generation of quantum sensors and adaptive devices, spanning optical, electrical, mechanical, thermal, and magnetic domains. This review provides a comprehensive overview of the conceptual foundations, theoretical frameworks, and experimental progress underlying ferroionic systems, highlighting their role as a bridge between ferroelectrics, solid electrolytes, and correlated quantum materials. Finally, perspectives are offered on how ferroionic coupling may reshape device physics and enable sustainable, self-powered information and energy technologies.
{"title":"Ferroelectric and ferroionic multifunctional quantum sensors: Incursion into applications","authors":"Beatriz M. Gomes, Tomás Prior, Ângela Freitas, António B. Vale, Beatriz A. Maia, Hugo Lebre, Manuela C. Baptista, Raquel Dantas, M. Helena Braga","doi":"10.1063/5.0251263","DOIUrl":"https://doi.org/10.1063/5.0251263","url":null,"abstract":"Ferroelectric materials are poised to drive the next technological leap through their emergent functionalities, including negative capacitance and resistance, charge accumulation without transport, and spontaneous polarization switching. The discovery of ferroionic material-systems that combine room-temperature ferroelectricity and fast ionic conductivity has opened an unprecedented avenue for multifunctional devices that merge the territories of electronics and ionics. These hybrid materials enable the direct coupling of ionic and electronic order parameters, allowing long-range electrostatic interactions, wireless field communication, and energy transduction across solid–solid and solid–air interfaces. Such capabilities offer potential solutions to long-standing challenges, including the Boltzmann limit in transistor subthreshold operation, voltage amplification without power dissipation, and nonvolatile polarization states with ionic reconfigurability. Beyond conventional applications, ferroionics support a new generation of quantum sensors and adaptive devices, spanning optical, electrical, mechanical, thermal, and magnetic domains. This review provides a comprehensive overview of the conceptual foundations, theoretical frameworks, and experimental progress underlying ferroionic systems, highlighting their role as a bridge between ferroelectrics, solid electrolytes, and correlated quantum materials. Finally, perspectives are offered on how ferroionic coupling may reshape device physics and enable sustainable, self-powered information and energy technologies.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"95 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145961994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Quantum sensing, leveraging the principles of quantum mechanics, has revolutionized the field of precision measurement by achieving sensitivities beyond the classical limits. Among the various platforms for quantum sensing, cavity optomechanics has emerged as a particularly promising field. It studies the interaction between light and mechanical resonators within high-Q optical cavities, providing unique opportunities for enhancing measurement precision and sensitivity in quantum sensing. With advancements in technology, the range of applications for cavity optomechanics in quantum sensing is expanding rapidly. Particularly, the integration of optoelectronic technologies and miniaturization techniques holds promise for the development of more compact, efficient, and scalable quantum sensors. Quantum sensing with cavity optomechanics has been extensively studied and has progressed enormously over the past decades. This paper provides a systematic review of research on quantum sensing with cavity optomechanics, starting from the fundamental principles of optomechanical coupling, to the achievement of quantum ground-state cooling of mechanical oscillators and the preparation of basic quantum states, and then to the mechanisms of quantum sensing based on cavity optomechanics. Furthermore, we survey recent advancements in quantum sensing utilizing cavity optomechanics, including the enhancement of optomechanical sensing through the use of entanglement, squeezing, and quantum exceptional points. Finally, perspectives and opportunities for future developments of this field are provided.
{"title":"Quantum sensing with cavity optomechanics","authors":"Zeng-Xing Liu, Xiao-Jie Zuo, Jia-Xin Peng, Hao Xiong","doi":"10.1063/5.0237048","DOIUrl":"https://doi.org/10.1063/5.0237048","url":null,"abstract":"Quantum sensing, leveraging the principles of quantum mechanics, has revolutionized the field of precision measurement by achieving sensitivities beyond the classical limits. Among the various platforms for quantum sensing, cavity optomechanics has emerged as a particularly promising field. It studies the interaction between light and mechanical resonators within high-Q optical cavities, providing unique opportunities for enhancing measurement precision and sensitivity in quantum sensing. With advancements in technology, the range of applications for cavity optomechanics in quantum sensing is expanding rapidly. Particularly, the integration of optoelectronic technologies and miniaturization techniques holds promise for the development of more compact, efficient, and scalable quantum sensors. Quantum sensing with cavity optomechanics has been extensively studied and has progressed enormously over the past decades. This paper provides a systematic review of research on quantum sensing with cavity optomechanics, starting from the fundamental principles of optomechanical coupling, to the achievement of quantum ground-state cooling of mechanical oscillators and the preparation of basic quantum states, and then to the mechanisms of quantum sensing based on cavity optomechanics. Furthermore, we survey recent advancements in quantum sensing utilizing cavity optomechanics, including the enhancement of optomechanical sensing through the use of entanglement, squeezing, and quantum exceptional points. Finally, perspectives and opportunities for future developments of this field are provided.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"216 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145961993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Seokho Kim, Jiyoun Kim, Jiyoung Boo, Junsung Lee, Bo Hyun Kim, Bong Sup Shim, Jinho Choi, Dong Hyuk Park, Healin Im
Purely organic emitters can generate long-lived phosphorescence at room temperature. With their extremely low toxicity and environmentally friendly processes, their extended emissive decay, often lasting several milliseconds, combined with high quantum yields makes them promising for a range of emission and sensory platforms. Room temperature phosphorescence (RTP) is highly dependent on both the crystallinity and geometry of organic crystals, which are significantly influenced by the surrounding environments. Key factors include organic solvents in which organic emitters are dissolved or dispersed, the surface properties where the organic crystal is grown, and nearby adjacent emitters. This work presents a strategy for forming nanorod-shaped purely organic chromophores that exhibit RTP through hybridization with host molecules on an eco-friendly cellulose membrane. Tuning the crystal morphology significantly influences the photophysical properties and enhances phosphorescence efficiency while enabling waveguided emission along a one-dimensional geometry. Finally, to exploit the ultralong phosphorescent lifetime in the millisecond regime, phosphorescence resonance energy transfer was achieved by coupling with Rhodamine B, an organic fluorophore, highlighting the potential for tunable emission through the formation of an amorphous interface at the contact region.
{"title":"Triplet-mediated waveguiding and energy transfer in organic phosphors on cellulose","authors":"Seokho Kim, Jiyoun Kim, Jiyoung Boo, Junsung Lee, Bo Hyun Kim, Bong Sup Shim, Jinho Choi, Dong Hyuk Park, Healin Im","doi":"10.1063/5.0302351","DOIUrl":"https://doi.org/10.1063/5.0302351","url":null,"abstract":"Purely organic emitters can generate long-lived phosphorescence at room temperature. With their extremely low toxicity and environmentally friendly processes, their extended emissive decay, often lasting several milliseconds, combined with high quantum yields makes them promising for a range of emission and sensory platforms. Room temperature phosphorescence (RTP) is highly dependent on both the crystallinity and geometry of organic crystals, which are significantly influenced by the surrounding environments. Key factors include organic solvents in which organic emitters are dissolved or dispersed, the surface properties where the organic crystal is grown, and nearby adjacent emitters. This work presents a strategy for forming nanorod-shaped purely organic chromophores that exhibit RTP through hybridization with host molecules on an eco-friendly cellulose membrane. Tuning the crystal morphology significantly influences the photophysical properties and enhances phosphorescence efficiency while enabling waveguided emission along a one-dimensional geometry. Finally, to exploit the ultralong phosphorescent lifetime in the millisecond regime, phosphorescence resonance energy transfer was achieved by coupling with Rhodamine B, an organic fluorophore, highlighting the potential for tunable emission through the formation of an amorphous interface at the contact region.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"20 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145894091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhaojun Lin, Heng Zhou, Yuanjie Lv, Peng Cui, Mingyan Wang, Chongbiao Luan, Jianzhi Zhao, Ming Yang, Chen Fu
We present a comprehensive review and analysis of the polarization Coulomb field (PCF) scattering theory in GaN heterostructure field-effect transistors (GaN HFETs), which include AlGaN/GaN HFETs and InAlN/GaN HFETs. This paper develops a theoretical framework for understanding PCF scattering in GaN HFETs and explores its application in various areas, including device modeling, channel electron velocity modulation, circuit performance optimization, and the analysis of split-gate AlGaN/GaN HFETs. Additionally, we investigate the potential applications of PCF scattering theory in polar dielectric semiconductor devices and underscore its broader scientific significance.
{"title":"Effect of polarization Coulomb field scattering on GaN devices","authors":"Zhaojun Lin, Heng Zhou, Yuanjie Lv, Peng Cui, Mingyan Wang, Chongbiao Luan, Jianzhi Zhao, Ming Yang, Chen Fu","doi":"10.1063/5.0273085","DOIUrl":"https://doi.org/10.1063/5.0273085","url":null,"abstract":"We present a comprehensive review and analysis of the polarization Coulomb field (PCF) scattering theory in GaN heterostructure field-effect transistors (GaN HFETs), which include AlGaN/GaN HFETs and InAlN/GaN HFETs. This paper develops a theoretical framework for understanding PCF scattering in GaN HFETs and explores its application in various areas, including device modeling, channel electron velocity modulation, circuit performance optimization, and the analysis of split-gate AlGaN/GaN HFETs. Additionally, we investigate the potential applications of PCF scattering theory in polar dielectric semiconductor devices and underscore its broader scientific significance.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"35 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145894051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Qian Zhou, Yongchao Li, Yiwei Wang, Hui Zhou, Pei He, Bing Ji, Bingpu Zhou, Junliang Yang
Human–machine interaction (HMI) interfaces capable of conveniently transmitting massive human-made information and conversely recognizing the identity (ID) of individuals are highly desired while remaining challenging. Herein, a programmable self-powered handwritten e-skin consisted of soft magnetized pillars (MPs) and an underneath flexible coil electrode for convenient, efficient and ID identifiable HMI applications is presented. With the built-in magnetic moment alignment, the deflection and elastic recovery (ER) of the soft MPs triggered by sliding operations can induce the sequential generation of sliding-adaptive negative voltage signals and fixed ER-induced positive voltage signals. The sliding-adaptive signals can originally serve as the bio-mechanical information of individuals to recognize the habit-related sliding speeds for ID identification. The sliding-irrelevant ER-induced signals can be further programmed into a variety of non-overlapping levels by customizing the MPs with different elastic and magnetic properties. Such programmable non-overlapping ER-induced signals not only ensure the capability of encoding massive information, but also endow the function of single-channel addressing of the e-skin. With these distinctive features, the potential applications of high-capacity commands output for game character controlling, single-channel handwritten transmission of alphabet information, and password/ID dual decoding (with an average accuracy rate of 99.5%) are successfully demonstrated.
{"title":"Programmable magnetized pillars enabled self-powered, single-channel and identity identifiable handwritten e-skin","authors":"Qian Zhou, Yongchao Li, Yiwei Wang, Hui Zhou, Pei He, Bing Ji, Bingpu Zhou, Junliang Yang","doi":"10.1063/5.0301455","DOIUrl":"https://doi.org/10.1063/5.0301455","url":null,"abstract":"Human–machine interaction (HMI) interfaces capable of conveniently transmitting massive human-made information and conversely recognizing the identity (ID) of individuals are highly desired while remaining challenging. Herein, a programmable self-powered handwritten e-skin consisted of soft magnetized pillars (MPs) and an underneath flexible coil electrode for convenient, efficient and ID identifiable HMI applications is presented. With the built-in magnetic moment alignment, the deflection and elastic recovery (ER) of the soft MPs triggered by sliding operations can induce the sequential generation of sliding-adaptive negative voltage signals and fixed ER-induced positive voltage signals. The sliding-adaptive signals can originally serve as the bio-mechanical information of individuals to recognize the habit-related sliding speeds for ID identification. The sliding-irrelevant ER-induced signals can be further programmed into a variety of non-overlapping levels by customizing the MPs with different elastic and magnetic properties. Such programmable non-overlapping ER-induced signals not only ensure the capability of encoding massive information, but also endow the function of single-channel addressing of the e-skin. With these distinctive features, the potential applications of high-capacity commands output for game character controlling, single-channel handwritten transmission of alphabet information, and password/ID dual decoding (with an average accuracy rate of 99.5%) are successfully demonstrated.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"42 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145894076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fluorescence lifetime imaging microscopy (FLIM) has emerged as a powerful biomedical imaging technique for the quantitative visualization of intricate molecular and cellular processes. Significant advancements in photonics, sensor technology, data acquisition systems, and computational algorithms have substantially improved the spatiotemporal resolution, imaging depth, and analytical throughput of FLIM. These developments have diversified FLIM methodologies, including time-domain techniques such as time-correlated single-photon counting (TCSPC), time-gated detection, streak cameras, and direct pulse-recording systems, as well as frequency-domain approaches. Concurrently, FLIM has been successfully integrated with advanced imaging modalities, such as multiphoton microscopy, light-sheet imaging, and endoscopy. This review provides a comprehensive synthesis of advanced FLIM technologies. We present in-depth discussions on the principles of lifetime quantification, recent innovations in hardware and algorithms for lifetime recovery, and state-of-the-art strategies to accelerate imaging speed while maintaining resolution and sensitivity. Moreover, we explore FLIM's unique capability to investigate dynamic metabolic states through endogenous autofluorescent cofactors, quantify physicochemical parameters of the cellular microenvironment (e.g., pH, polarity, viscosity, and ion concentrations), and facilitate the diagnosis of diseases such as cancer and neurodegeneration. Finally, we discuss future directions for FLIM development, including integration with deep learning, miniaturized hardware for point-of-care applications, and real-time clinical translation. Collectively, this review aims to provide researchers, clinicians, and engineers with both fundamental knowledge and forward-looking perspectives to further unlock the potential of FLIM in advancing biomedical science.
{"title":"Advances in fluorescence lifetime imaging microscopy: Techniques and biomedical applications","authors":"Fangrui Lin, Chenshuang Zhang, Zhenlong Huang, Yiqiang Wang, Min Yi, Jia Li, Xiaoyu Weng, Yu Chen, Puxiang Lai, Junle Qu","doi":"10.1063/5.0300853","DOIUrl":"https://doi.org/10.1063/5.0300853","url":null,"abstract":"Fluorescence lifetime imaging microscopy (FLIM) has emerged as a powerful biomedical imaging technique for the quantitative visualization of intricate molecular and cellular processes. Significant advancements in photonics, sensor technology, data acquisition systems, and computational algorithms have substantially improved the spatiotemporal resolution, imaging depth, and analytical throughput of FLIM. These developments have diversified FLIM methodologies, including time-domain techniques such as time-correlated single-photon counting (TCSPC), time-gated detection, streak cameras, and direct pulse-recording systems, as well as frequency-domain approaches. Concurrently, FLIM has been successfully integrated with advanced imaging modalities, such as multiphoton microscopy, light-sheet imaging, and endoscopy. This review provides a comprehensive synthesis of advanced FLIM technologies. We present in-depth discussions on the principles of lifetime quantification, recent innovations in hardware and algorithms for lifetime recovery, and state-of-the-art strategies to accelerate imaging speed while maintaining resolution and sensitivity. Moreover, we explore FLIM's unique capability to investigate dynamic metabolic states through endogenous autofluorescent cofactors, quantify physicochemical parameters of the cellular microenvironment (e.g., pH, polarity, viscosity, and ion concentrations), and facilitate the diagnosis of diseases such as cancer and neurodegeneration. Finally, we discuss future directions for FLIM development, including integration with deep learning, miniaturized hardware for point-of-care applications, and real-time clinical translation. Collectively, this review aims to provide researchers, clinicians, and engineers with both fundamental knowledge and forward-looking perspectives to further unlock the potential of FLIM in advancing biomedical science.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"127 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145894077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Topological insulators (TIs) are emerging quantum materials with insulating bulk and topologically protected metallic surface states. The electrons in the surface state are massless Dirac fermions with full spin polarization and are protected from backscattering. Due to this unique electronic structure, they exhibit novel optoelectronic properties and a variety of quantum effects. These distinctive properties make TIs potential candidates for applications in low-energy-consumption electronic devices, quantum computing, and low-loss optoelectronic devices. The unique optical properties of TIs have advanced considerably the development of plasmon-enhanced photovoltaic devices, ultrathin holograms, optical angular momentum nanometrology, and planar lenses. These developments underscore how TIs are setting new benchmarks in the optoelectronic domain and demonstrate the broad applicability of these materials. This comprehensive overview of recent progress in the field of TI optics emphasizes the wide range of applications of various compounds and showcases their exceptional performance. We introduce the optical properties of TIs and explore the performances of many devices based on these materials. On the latter subject, we discuss the innovative structures on which they are based, highlight potential directions for experimental innovations and device development, and consider their significance in both fundamental research and practical applications.
{"title":"Topological insulator materials for optics: Research progress and prospects","authors":"Xin Li, Hua Lu, Runze Li, Zhengfen Wan, Xiaolin Wang, Salvatore Macis, Stefano Lupi, Min Gu, Hongxia Wang, Zengji Yue","doi":"10.1063/5.0271855","DOIUrl":"https://doi.org/10.1063/5.0271855","url":null,"abstract":"Topological insulators (TIs) are emerging quantum materials with insulating bulk and topologically protected metallic surface states. The electrons in the surface state are massless Dirac fermions with full spin polarization and are protected from backscattering. Due to this unique electronic structure, they exhibit novel optoelectronic properties and a variety of quantum effects. These distinctive properties make TIs potential candidates for applications in low-energy-consumption electronic devices, quantum computing, and low-loss optoelectronic devices. The unique optical properties of TIs have advanced considerably the development of plasmon-enhanced photovoltaic devices, ultrathin holograms, optical angular momentum nanometrology, and planar lenses. These developments underscore how TIs are setting new benchmarks in the optoelectronic domain and demonstrate the broad applicability of these materials. This comprehensive overview of recent progress in the field of TI optics emphasizes the wide range of applications of various compounds and showcases their exceptional performance. We introduce the optical properties of TIs and explore the performances of many devices based on these materials. On the latter subject, we discuss the innovative structures on which they are based, highlight potential directions for experimental innovations and device development, and consider their significance in both fundamental research and practical applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"14 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145894075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Technologies for manipulating single atoms have advanced drastically in the past decades. Due to their excellent controllability of internal states, atoms serve as one of the ideal platforms for quantum systems. One major research direction in atomic systems is the precise determination of physical quantities using atoms, which is included in the field of precision measurements. One of such precisely measured physical quantities is the energy differences between two energy levels in atoms, which is symbolized by the remarkable fractional uncertainty of 10−18 or lower achieved in the state-of-the-art atomic clocks. Two-level systems in atoms are sensitive to various external fields and can, therefore, function as quantum sensors. The effect of these fields manifests as energy shifts in the two-level system. Traditionally, such shifts are induced by electric or magnetic fields, as recognized even before the advent of precision spectroscopy with lasers. With high-precision measurements, tiny energy shifts caused by hypothetical fields weakly coupled to ordinary matter or by small effects mediated by massive particles can be potentially detectable, which are conventionally dealt with in the field of nuclear and particle physics. In most cases, the atomic systems as quantum sensors have not been sensitive enough to detect such effects. Instead, experiments searching for these interactions have placed constraints on coupling constants, except in a few cases where the effects are predicted by the Standard Model of particle physics. Nonetheless, measurements and searches for these effects in atomic systems have led to the emergence of a new field of physics. In some cases, they open new parameter spaces to explore in conventionally investigated topics, e.g., dark matter, fifth force, and other physics beyond the Standard Model. In other cases, these measurements provide alternative experimental approaches to established topics, e.g., variations of fundamental constants searched for astronomically and nuclear structure studied in high-energy scattering experiments. The use of atomic clocks as quantum sensors for phenomena originating from nuclear and particle physics evolved significantly in the past decades. This paper highlights the recent developments in the field.
{"title":"Quantum sensing using atomic clocks for nuclear and particle physics","authors":"Akio Kawasaki","doi":"10.1063/5.0273813","DOIUrl":"https://doi.org/10.1063/5.0273813","url":null,"abstract":"Technologies for manipulating single atoms have advanced drastically in the past decades. Due to their excellent controllability of internal states, atoms serve as one of the ideal platforms for quantum systems. One major research direction in atomic systems is the precise determination of physical quantities using atoms, which is included in the field of precision measurements. One of such precisely measured physical quantities is the energy differences between two energy levels in atoms, which is symbolized by the remarkable fractional uncertainty of 10−18 or lower achieved in the state-of-the-art atomic clocks. Two-level systems in atoms are sensitive to various external fields and can, therefore, function as quantum sensors. The effect of these fields manifests as energy shifts in the two-level system. Traditionally, such shifts are induced by electric or magnetic fields, as recognized even before the advent of precision spectroscopy with lasers. With high-precision measurements, tiny energy shifts caused by hypothetical fields weakly coupled to ordinary matter or by small effects mediated by massive particles can be potentially detectable, which are conventionally dealt with in the field of nuclear and particle physics. In most cases, the atomic systems as quantum sensors have not been sensitive enough to detect such effects. Instead, experiments searching for these interactions have placed constraints on coupling constants, except in a few cases where the effects are predicted by the Standard Model of particle physics. Nonetheless, measurements and searches for these effects in atomic systems have led to the emergence of a new field of physics. In some cases, they open new parameter spaces to explore in conventionally investigated topics, e.g., dark matter, fifth force, and other physics beyond the Standard Model. In other cases, these measurements provide alternative experimental approaches to established topics, e.g., variations of fundamental constants searched for astronomically and nuclear structure studied in high-energy scattering experiments. The use of atomic clocks as quantum sensors for phenomena originating from nuclear and particle physics evolved significantly in the past decades. This paper highlights the recent developments in the field.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"6 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145894019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Crystalline silicon (c-Si) photovoltaics dominate the solar industry, yet further advancements hinge on passivating and carrier-selective contacts to overcome efficiency limitations. This review explores the pivotal role of atomic layer deposition (ALD) in enabling metal oxide films for high-performance c-Si solar cells, bridging material innovation with industrial scalability. Historically, ALD-grown Al2O3 enabled the effective passivation of p-type Si surfaces via its high negative fixed charge, which made localized rear contacts viable and facilitated the transition from aluminum back surface field to passivated emitter rear contact architectures, ultimately lowering J0 and boosting efficiency. However, emerging carrier-selective contacts demand materials that simultaneously minimize recombination and resistive losses while avoiding parasitic absorption. Metal oxides, leveraging tunable optoelectronic properties and ALD's atomic-scale precision, offer a promising alternative to conventional silicon-based films (e.g., a-Si:H and poly-Si). We analyzed 373 studies to map trends in ALD metal oxide applications, highlighting the dominance of Al2O3 and TiO2, alongside growing interest in multi-metal oxides. The review underscores ALD's unique ability to tailor chemical and field-effect passivation mechanisms while addressing challenges in stoichiometric control and interfacial engineering. Targeting both ALD specialists and PV engineers, we propose standardized metrics for evaluating passivating contacts, aiming to accelerate cross-disciplinary innovation. Finally, we outline future opportunities for ALD-derived metal oxide in next-generation photovoltaics, including tandem and thin-film technologies, advocating for systematic research to unlock their full potential.
{"title":"Atomic layer deposition (ALD) of passivating, carrier-selective oxides for silicon photovoltaics","authors":"Chien-Hsuan Chen, Gouri Syamala Rao Mullapudi, Kristopher O. Davis, Parag Banerjee","doi":"10.1063/5.0275420","DOIUrl":"https://doi.org/10.1063/5.0275420","url":null,"abstract":"Crystalline silicon (c-Si) photovoltaics dominate the solar industry, yet further advancements hinge on passivating and carrier-selective contacts to overcome efficiency limitations. This review explores the pivotal role of atomic layer deposition (ALD) in enabling metal oxide films for high-performance c-Si solar cells, bridging material innovation with industrial scalability. Historically, ALD-grown Al2O3 enabled the effective passivation of p-type Si surfaces via its high negative fixed charge, which made localized rear contacts viable and facilitated the transition from aluminum back surface field to passivated emitter rear contact architectures, ultimately lowering J0 and boosting efficiency. However, emerging carrier-selective contacts demand materials that simultaneously minimize recombination and resistive losses while avoiding parasitic absorption. Metal oxides, leveraging tunable optoelectronic properties and ALD's atomic-scale precision, offer a promising alternative to conventional silicon-based films (e.g., a-Si:H and poly-Si). We analyzed 373 studies to map trends in ALD metal oxide applications, highlighting the dominance of Al2O3 and TiO2, alongside growing interest in multi-metal oxides. The review underscores ALD's unique ability to tailor chemical and field-effect passivation mechanisms while addressing challenges in stoichiometric control and interfacial engineering. Targeting both ALD specialists and PV engineers, we propose standardized metrics for evaluating passivating contacts, aiming to accelerate cross-disciplinary innovation. Finally, we outline future opportunities for ALD-derived metal oxide in next-generation photovoltaics, including tandem and thin-film technologies, advocating for systematic research to unlock their full potential.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"13 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145894043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuyang Zhang, Kang'an Jiang, Anhua Dong, Ke Chang, Xian-Min Jin, Hui Wang
While classical memristors demonstrate reliable binary switching, multi-level states remain constrained by scalability and mechanism variability. Quantum conductance memristors, with discrete quantized conductance steps, offer a promising alternative. However, achieving stable quantized states requires precise atomic-scale filament control and quantum state stability, posing even greater challenges. Here, we address these challenges by constructing a multilayer MoS2/MoS2:Ag structure that stably yields previously elusive conductance steps. Combined with a non-reset voltage scanning method and supported by a scattering center model, our approach markedly improves reproducibility. Moreover, we observe light-induced half-integer conductance states in a non-magnetic system. Such phenomena, previously reported only in oxygen-vacancy-based devices, are here realized for the first time in a cation-migration-based quantum conductance memristor. This arises from the strong photoresponse of MoS2 and the offset between the Ag work function and the MoS2 conduction band minimum, which together enable spin-selective transport. This finding surpasses classical multi-level limits and opens new paths for optoelectronic quantum conductance control.
{"title":"Stable multi-level quantum conductance in an optically tunable ITO/MoS2-Ag/Pt memristor","authors":"Yuyang Zhang, Kang'an Jiang, Anhua Dong, Ke Chang, Xian-Min Jin, Hui Wang","doi":"10.1063/5.0296500","DOIUrl":"https://doi.org/10.1063/5.0296500","url":null,"abstract":"While classical memristors demonstrate reliable binary switching, multi-level states remain constrained by scalability and mechanism variability. Quantum conductance memristors, with discrete quantized conductance steps, offer a promising alternative. However, achieving stable quantized states requires precise atomic-scale filament control and quantum state stability, posing even greater challenges. Here, we address these challenges by constructing a multilayer MoS2/MoS2:Ag structure that stably yields previously elusive conductance steps. Combined with a non-reset voltage scanning method and supported by a scattering center model, our approach markedly improves reproducibility. Moreover, we observe light-induced half-integer conductance states in a non-magnetic system. Such phenomena, previously reported only in oxygen-vacancy-based devices, are here realized for the first time in a cation-migration-based quantum conductance memristor. This arises from the strong photoresponse of MoS2 and the offset between the Ag work function and the MoS2 conduction band minimum, which together enable spin-selective transport. This finding surpasses classical multi-level limits and opens new paths for optoelectronic quantum conductance control.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"45 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145813322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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