This study establishes an explicit photoresponse theory for polycrystalline nanowire photoconductors, addressing the gap in understanding gain mechanisms in scalable polycrystalline systems. Traditional photoconductive gain models assume uniform carrier distribution and equal electron–hole contributions, which fail to account for grain boundary effects in polycrystalline materials. The proposed theory introduces the photogating effect as the origin of high gain, where light-induced photovoltage modulates conduction barriers at grain boundaries. Experimental validation utilized silicon nanowires with multiple transparent ITO gates to mimic grain boundary potential barriers. Photoresponse measurements under varying gate voltages and light intensities (532 nm LED) demonstrated excellent agreement with derived analytical equations, enabling the extraction of critical parameters such as minority carrier recombination lifetime (τ0) and critical light intensity. Silvaco TCAD simulations further corroborated the theory, showing barrier height and number-dependent photocurrent trends consistent with experiments. Additionally, polycrystalline ZnO thin-film devices and literature data from other polycrystalline systems were successfully fitted to the model, confirming its universality. This work provides a unified framework for optimizing responsivity and bandwidth in low-dimensional photodetectors, bridging theoretical insights with practical applications in next-generation optoelectronics.
{"title":"Explicit photogain principle for polycrystalline nanowire photoconductors","authors":"Shuwen Guo, Huan Liu, Wenyu Zhang, Kai Li, Abdelmadjid Melsi, Huayou Liu, Yinchu Shen, Yumeng Liu, Jiajun Shen, Xiaokun Gu, Wei Yu, Xiaochuan Guo, Wenbo Peng, Yongning He, Yaping Dan","doi":"10.1063/5.0282633","DOIUrl":"https://doi.org/10.1063/5.0282633","url":null,"abstract":"This study establishes an explicit photoresponse theory for polycrystalline nanowire photoconductors, addressing the gap in understanding gain mechanisms in scalable polycrystalline systems. Traditional photoconductive gain models assume uniform carrier distribution and equal electron–hole contributions, which fail to account for grain boundary effects in polycrystalline materials. The proposed theory introduces the photogating effect as the origin of high gain, where light-induced photovoltage modulates conduction barriers at grain boundaries. Experimental validation utilized silicon nanowires with multiple transparent ITO gates to mimic grain boundary potential barriers. Photoresponse measurements under varying gate voltages and light intensities (532 nm LED) demonstrated excellent agreement with derived analytical equations, enabling the extraction of critical parameters such as minority carrier recombination lifetime (τ0) and critical light intensity. Silvaco TCAD simulations further corroborated the theory, showing barrier height and number-dependent photocurrent trends consistent with experiments. Additionally, polycrystalline ZnO thin-film devices and literature data from other polycrystalline systems were successfully fitted to the model, confirming its universality. This work provides a unified framework for optimizing responsivity and bandwidth in low-dimensional photodetectors, bridging theoretical insights with practical applications in next-generation optoelectronics.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"30 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145560527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kubra Sattar, Rabia Tahir, Muhammad Yousaf, Thorsten M. Gesing, M. Mangir Murshed, Syed Rizwan
As an exemplary member of the MXene family belonging to the class of two-dimensional materials, titanium carbide (Ti3C2Tx) MXene stands bright and is explored owing to its exceptional tunable properties. The full ambient oxidation of MXene in a spectrum of varying elevated temperatures toward the application of memristor devices is reported for the first time in this work. A Ti3C2Tx MXene free-standing film is oxidized in air from the temperature of 100 to 700 °C upon which the MXene completely transforms into the TiO2 film yet retaining its free-standing nature in the form of MXene-derived TiO2 films. Extensive surface, morphological, and bulk characterizations, such as x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray diffraction, confirmed the increasing Ti–O and decreasing Ti–C bond strength amid increasing oxidation. Furthermore, exceptional resistance switching properties are unveiled employing these heated MXene devices in tri-layer memristors utilizing flexible reduced graphene oxide as electrodes. The memristor device utilizing Ti3C2Tx MXene heated at 700 °C exhibited outstanding performance compared to the other series of devices with low switching voltage, a high OFF/ON ratio of >102, cycle-to-cycle repeatability, and exceptional endurance of over 6000 cycles. This work on MXene-derived TiO2 free-standing films will lay open ways to obtain oxide based flexible electronic devices through easy fabrication methods along with the possible capability to mimic unmatched synaptic features.
{"title":"Partial-to-fully oxidized spectrum of Ti3C2T x MXene-derived TiO2 free-standing films for nonvolatile high endurance memristive data storage","authors":"Kubra Sattar, Rabia Tahir, Muhammad Yousaf, Thorsten M. Gesing, M. Mangir Murshed, Syed Rizwan","doi":"10.1063/5.0293660","DOIUrl":"https://doi.org/10.1063/5.0293660","url":null,"abstract":"As an exemplary member of the MXene family belonging to the class of two-dimensional materials, titanium carbide (Ti3C2Tx) MXene stands bright and is explored owing to its exceptional tunable properties. The full ambient oxidation of MXene in a spectrum of varying elevated temperatures toward the application of memristor devices is reported for the first time in this work. A Ti3C2Tx MXene free-standing film is oxidized in air from the temperature of 100 to 700 °C upon which the MXene completely transforms into the TiO2 film yet retaining its free-standing nature in the form of MXene-derived TiO2 films. Extensive surface, morphological, and bulk characterizations, such as x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray diffraction, confirmed the increasing Ti–O and decreasing Ti–C bond strength amid increasing oxidation. Furthermore, exceptional resistance switching properties are unveiled employing these heated MXene devices in tri-layer memristors utilizing flexible reduced graphene oxide as electrodes. The memristor device utilizing Ti3C2Tx MXene heated at 700 °C exhibited outstanding performance compared to the other series of devices with low switching voltage, a high OFF/ON ratio of >102, cycle-to-cycle repeatability, and exceptional endurance of over 6000 cycles. This work on MXene-derived TiO2 free-standing films will lay open ways to obtain oxide based flexible electronic devices through easy fabrication methods along with the possible capability to mimic unmatched synaptic features.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"5 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145560528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Taehwan Kim, Sangbum Kim, Periyayya Uthirakumar, Yeong-Hoon Cho, Pil-Kyu Jang, Seungjae Baek, Vandung Dao, Sunny Yadav, Il-Soo Kim, Myung-Soo Han, Yong-Ho Ra, Sangjin Min, Dong-Soo Shin, Jong-In Shim, Stephen J. Pearton, In-Hwan Lee
Red micro-LEDs (μ-LEDs) hold immense potential for next-generation displays, but their efficiency, particularly in smaller sizes, remains a significant challenge. To address this, we introduce a novel approach that leverages localized surface plasmon resonance (LSPR) to dramatically boost the performance of red μ-LEDs. Our strategy involves integrating rod-shaped Au nanoparticles into a precisely engineered nanohole pattern. By strategically placing these nanoparticles, we optimize LSPR coupling with the active region of the μ-LEDs, resulting in significant enhancements in light extraction efficiency and reduced radiative recombination rates. Furthermore, we employ a chemical treatment to effectively passivate surface defects, minimizing non-radiative recombination losses. This synergistic approach leads to a substantial increase in both optical output and electroluminescence intensity, pushing the boundaries of red μ-LED performance. The nanohole-patterned μ-LED chips achieve a ∼2.32-fold higher optical output at 50 A/cm2, along with an ∼8.96-fold higher electroluminescence, compared to the bare μ-LEDs. A lower lifetime of 0.348 ns for the nanohole-patterned μ-LEDs elucidates the fundamental mechanism of the novel approach with a high energy-coupling efficiency (67%) of the multi-quantum wells through the fast LSP channel. Our findings offer a promising pathway to realize highly efficient and compact red μ-LEDs, paving the way for advanced display technologies with superior brightness, color purity, and energy efficiency.
{"title":"Revolutionizing red micro-LEDs: Harnessing surface plasmons for enhanced efficiency","authors":"Taehwan Kim, Sangbum Kim, Periyayya Uthirakumar, Yeong-Hoon Cho, Pil-Kyu Jang, Seungjae Baek, Vandung Dao, Sunny Yadav, Il-Soo Kim, Myung-Soo Han, Yong-Ho Ra, Sangjin Min, Dong-Soo Shin, Jong-In Shim, Stephen J. Pearton, In-Hwan Lee","doi":"10.1063/5.0256125","DOIUrl":"https://doi.org/10.1063/5.0256125","url":null,"abstract":"Red micro-LEDs (μ-LEDs) hold immense potential for next-generation displays, but their efficiency, particularly in smaller sizes, remains a significant challenge. To address this, we introduce a novel approach that leverages localized surface plasmon resonance (LSPR) to dramatically boost the performance of red μ-LEDs. Our strategy involves integrating rod-shaped Au nanoparticles into a precisely engineered nanohole pattern. By strategically placing these nanoparticles, we optimize LSPR coupling with the active region of the μ-LEDs, resulting in significant enhancements in light extraction efficiency and reduced radiative recombination rates. Furthermore, we employ a chemical treatment to effectively passivate surface defects, minimizing non-radiative recombination losses. This synergistic approach leads to a substantial increase in both optical output and electroluminescence intensity, pushing the boundaries of red μ-LED performance. The nanohole-patterned μ-LED chips achieve a ∼2.32-fold higher optical output at 50 A/cm2, along with an ∼8.96-fold higher electroluminescence, compared to the bare μ-LEDs. A lower lifetime of 0.348 ns for the nanohole-patterned μ-LEDs elucidates the fundamental mechanism of the novel approach with a high energy-coupling efficiency (67%) of the multi-quantum wells through the fast LSP channel. Our findings offer a promising pathway to realize highly efficient and compact red μ-LEDs, paving the way for advanced display technologies with superior brightness, color purity, and energy efficiency.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"3 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145553423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chao Liu, Yu-Cheng Lin, Yi Zheng, Rong-Qiang Li, Zheng-Chao Wang, Xiao-Ke Lu, Xiao-Hao Zhang, Fan Chu, Hao-Ran Zhang, Qiong-Hua Wang
As emerging photonic devices, tunable liquid lenses have received increasing attention and have already demonstrated great application value, especially in imaging and display fields. Due to the unique advantages of strong adjustability, fast response speed, low power consumption, and miniaturization, tunable liquid lenses provide a competitive solution for designing high-performance imaging and display systems with fast zoom and focus functions, and can help solve scientific issues and break through application limitations. In this review, we briefly introduce and classify current tunable liquid lenses. Then, we give an overview of the application of tunable liquid lenses in imaging and display fields, including microscopy, photography, endoscopy, autostereoscopic display, integral imaging display, holographic display, and AR/VR display. The existing problems, challenges, and perspectives for the applications of liquid lenses are also discussed.
{"title":"Application of tunable liquid lens in imaging and display","authors":"Chao Liu, Yu-Cheng Lin, Yi Zheng, Rong-Qiang Li, Zheng-Chao Wang, Xiao-Ke Lu, Xiao-Hao Zhang, Fan Chu, Hao-Ran Zhang, Qiong-Hua Wang","doi":"10.1063/5.0285668","DOIUrl":"https://doi.org/10.1063/5.0285668","url":null,"abstract":"As emerging photonic devices, tunable liquid lenses have received increasing attention and have already demonstrated great application value, especially in imaging and display fields. Due to the unique advantages of strong adjustability, fast response speed, low power consumption, and miniaturization, tunable liquid lenses provide a competitive solution for designing high-performance imaging and display systems with fast zoom and focus functions, and can help solve scientific issues and break through application limitations. In this review, we briefly introduce and classify current tunable liquid lenses. Then, we give an overview of the application of tunable liquid lenses in imaging and display fields, including microscopy, photography, endoscopy, autostereoscopic display, integral imaging display, holographic display, and AR/VR display. The existing problems, challenges, and perspectives for the applications of liquid lenses are also discussed.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"4 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145546069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thermoelectric energy conversion is a promising renewable technology to generate electricity by recovering waste heat. Great progress has been made in energy conversion efficiency of thermoelectric materials, but further performance enhancement has been expected by developing new material design rules. Recently, “mixed-anion” materials, which consist of two or more anionic species in a single phase, have attracted much attention as a next-generation high-performance thermoelectric material. They form unique crystal structures and coordination not observed in single-anion systems and have demonstrated, for example, extremely low lattice thermal conductivity and also specific electronic structure enabling high thermoelectric performance. This paper provides a comprehensive review of the recent advances in mixed-anion thermoelectric materials and the mixed-anion effect on electron and phonon transport. We first provide an overview of the historical approach of multiple-anion substitution onto single-anion compounds and discuss the substantial impacts of multiple anion substitutions across different material systems. Then, we summarize the characteristics of crystal structures and physical properties, as well as the recent advances in thermoelectric properties for the mixed-anion compounds that naturally contain multiple anions. In the end, we point out the currently unsolved challenges and future prospects toward the development of mixed-anion thermoelectrics. Mixed-anion materials have a large degree of freedom regarding the choice of the constituent anion combinations, which provides a wide search space for new materials with further outstanding thermoelectric performance. Going forward, we expect that the mixed-anion strategy offers great potential for finding new classes of high-performance thermoelectric materials.
{"title":"Mixed-anion thermoelectrics: Advanced tuning of electron and phonon transport","authors":"Takayoshi Katase, Naoki Sato, Takao Mori","doi":"10.1063/5.0263175","DOIUrl":"https://doi.org/10.1063/5.0263175","url":null,"abstract":"Thermoelectric energy conversion is a promising renewable technology to generate electricity by recovering waste heat. Great progress has been made in energy conversion efficiency of thermoelectric materials, but further performance enhancement has been expected by developing new material design rules. Recently, “mixed-anion” materials, which consist of two or more anionic species in a single phase, have attracted much attention as a next-generation high-performance thermoelectric material. They form unique crystal structures and coordination not observed in single-anion systems and have demonstrated, for example, extremely low lattice thermal conductivity and also specific electronic structure enabling high thermoelectric performance. This paper provides a comprehensive review of the recent advances in mixed-anion thermoelectric materials and the mixed-anion effect on electron and phonon transport. We first provide an overview of the historical approach of multiple-anion substitution onto single-anion compounds and discuss the substantial impacts of multiple anion substitutions across different material systems. Then, we summarize the characteristics of crystal structures and physical properties, as well as the recent advances in thermoelectric properties for the mixed-anion compounds that naturally contain multiple anions. In the end, we point out the currently unsolved challenges and future prospects toward the development of mixed-anion thermoelectrics. Mixed-anion materials have a large degree of freedom regarding the choice of the constituent anion combinations, which provides a wide search space for new materials with further outstanding thermoelectric performance. Going forward, we expect that the mixed-anion strategy offers great potential for finding new classes of high-performance thermoelectric materials.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"6 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145536039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuhan Liang, Huiping Han, Hetian Chen, Yujun Zhang, Yi Zhang, Chao Li, Shun Lan, Fangyuan Zhu, Ji Ma, Di Yi, Jing Ma, Liang Wu, Tianxiang Nan, Yuan-Hua Lin
The unique features of ultrafast spin dynamics and the absence of macroscopic magnetization in antiferromagnetic (AFM) materials provide a distinct route toward high-speed magnetic storage devices with low energy consumption and high integration density. However, these advantages also introduce challenges in probing and controlling AFM order, thereby restricting their practical application. In this study, we demonstrate an all-electric control and probing of AFM order in heavy metal/AFM insulator heterostructures on a ferroelectric substrate at room temperature. The AFM order was detected by the anomalous Hall effect (AHE) and manipulated by the ferroelectric field effect as well as the piezoelectric effect in heterostructures of Pt/NiO/0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT). The nonvolatile control of AFM order gives rise to a 33% modulation of AHE, which is further evidenced by synchrotron-based x-ray magnetic linear dichroism. Combined with the in situ piezoelectric response of AHE, we demonstrate that the ferroelectric polarization contributes mainly to the control of AFM order. Our results are expected to have broader implications for efficient spintronic devices.
{"title":"Electrical modulation and probing of antiferromagnetism in hybrid multiferroic heterostructures","authors":"Yuhan Liang, Huiping Han, Hetian Chen, Yujun Zhang, Yi Zhang, Chao Li, Shun Lan, Fangyuan Zhu, Ji Ma, Di Yi, Jing Ma, Liang Wu, Tianxiang Nan, Yuan-Hua Lin","doi":"10.1063/5.0274464","DOIUrl":"https://doi.org/10.1063/5.0274464","url":null,"abstract":"The unique features of ultrafast spin dynamics and the absence of macroscopic magnetization in antiferromagnetic (AFM) materials provide a distinct route toward high-speed magnetic storage devices with low energy consumption and high integration density. However, these advantages also introduce challenges in probing and controlling AFM order, thereby restricting their practical application. In this study, we demonstrate an all-electric control and probing of AFM order in heavy metal/AFM insulator heterostructures on a ferroelectric substrate at room temperature. The AFM order was detected by the anomalous Hall effect (AHE) and manipulated by the ferroelectric field effect as well as the piezoelectric effect in heterostructures of Pt/NiO/0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT). The nonvolatile control of AFM order gives rise to a 33% modulation of AHE, which is further evidenced by synchrotron-based x-ray magnetic linear dichroism. Combined with the in situ piezoelectric response of AHE, we demonstrate that the ferroelectric polarization contributes mainly to the control of AFM order. Our results are expected to have broader implications for efficient spintronic devices.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"65 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145536041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abdoulaye Ndao, Edwin B. Fohtung, Moussa N'Gom, Thomas A. Searles, Kimani Toussaint, Yanne K. Chembo
The convergence of metamaterials and quantum optics heralds a transformative era in photonic technologies, poised to revolutionize applications ranging from information processing and imaging to sensing and beyond. This review explores the synergistic integration of metasurfaces—engineered sub-wavelength planar structures—and quantum optics, which exploits quantum mechanical principles to manipulate light at the most granular level. We outline the design principles, fabrication processes, and computational challenges involved in creating quantum metasurfaces, discussing both forward and inverse design approaches. Advances in nanofabrication and intelligent optimization techniques, such as machine learning and topology optimization, have enabled the development of metasurfaces with unparalleled control over electromagnetic waves. We examine recent progress in using quantum metasurfaces for single-photon and multi-photon generation, quantum imaging, and quantum sensing, showcasing how these innovations achieve unprecedented precision and novel functionalities. Additionally, we highlight the integration of metasurfaces into quantum light manipulation, emphasizing their role in enhancing wavefront shaping and entanglement control. By providing a comprehensive survey of current advancements and future research directions, this review highlights the vast potential of metasurfaces and quantum optics at the crossroads, setting the stage for next-generation technological innovations that will define the forthcoming decade.
{"title":"Synergistic integration of metasurfaces and quantum photonics: Pathways to next-generation technologies","authors":"Abdoulaye Ndao, Edwin B. Fohtung, Moussa N'Gom, Thomas A. Searles, Kimani Toussaint, Yanne K. Chembo","doi":"10.1063/5.0226259","DOIUrl":"https://doi.org/10.1063/5.0226259","url":null,"abstract":"The convergence of metamaterials and quantum optics heralds a transformative era in photonic technologies, poised to revolutionize applications ranging from information processing and imaging to sensing and beyond. This review explores the synergistic integration of metasurfaces—engineered sub-wavelength planar structures—and quantum optics, which exploits quantum mechanical principles to manipulate light at the most granular level. We outline the design principles, fabrication processes, and computational challenges involved in creating quantum metasurfaces, discussing both forward and inverse design approaches. Advances in nanofabrication and intelligent optimization techniques, such as machine learning and topology optimization, have enabled the development of metasurfaces with unparalleled control over electromagnetic waves. We examine recent progress in using quantum metasurfaces for single-photon and multi-photon generation, quantum imaging, and quantum sensing, showcasing how these innovations achieve unprecedented precision and novel functionalities. Additionally, we highlight the integration of metasurfaces into quantum light manipulation, emphasizing their role in enhancing wavefront shaping and entanglement control. By providing a comprehensive survey of current advancements and future research directions, this review highlights the vast potential of metasurfaces and quantum optics at the crossroads, setting the stage for next-generation technological innovations that will define the forthcoming decade.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"26 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145532039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Guangtan Miao, Yao Dong, Zezhong Yin, Guoxia Liu, Fukai Shan
With the increasing demand for processing massive and unstructured data, computing systems based on the von Neumann architecture are facing challenges of low-speed and high-energy consumption. Neuromorphic devices with synaptic functions are gradually emerging, which provides hardware support for the construction of brain-like computing systems. As an important branch of neuromorphic devices, synaptic transistors have shown great potential in energy-efficient parallel computing. Among the various types of synaptic transistors, oxide-based synaptic transistors (OSTs) have attracted widespread attention due to their compatibility with silicon technology and operating stability. Herein, the basic functionalities and the latest developments of OSTs are introduced. According to different operating mechanisms, OSTs are classified as electrolyte-gated synaptic transistors, ferroelectric synaptic transistors, charge trapping synaptic transistors, and photoelectric synaptic transistors. The material selection, device configuration, and synaptic characteristics of various devices are discussed. The application scenarios of OSTs in various fields are summarized. Finally, the development prospects of OSTs that could be significant for constructing neuromorphic systems are outlined.
{"title":"Recent advances in oxide-based synaptic transistors for neuromorphic applications","authors":"Guangtan Miao, Yao Dong, Zezhong Yin, Guoxia Liu, Fukai Shan","doi":"10.1063/5.0295981","DOIUrl":"https://doi.org/10.1063/5.0295981","url":null,"abstract":"With the increasing demand for processing massive and unstructured data, computing systems based on the von Neumann architecture are facing challenges of low-speed and high-energy consumption. Neuromorphic devices with synaptic functions are gradually emerging, which provides hardware support for the construction of brain-like computing systems. As an important branch of neuromorphic devices, synaptic transistors have shown great potential in energy-efficient parallel computing. Among the various types of synaptic transistors, oxide-based synaptic transistors (OSTs) have attracted widespread attention due to their compatibility with silicon technology and operating stability. Herein, the basic functionalities and the latest developments of OSTs are introduced. According to different operating mechanisms, OSTs are classified as electrolyte-gated synaptic transistors, ferroelectric synaptic transistors, charge trapping synaptic transistors, and photoelectric synaptic transistors. The material selection, device configuration, and synaptic characteristics of various devices are discussed. The application scenarios of OSTs in various fields are summarized. Finally, the development prospects of OSTs that could be significant for constructing neuromorphic systems are outlined.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"17 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145508962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Do Wan Kim, Hadi Nugraha Cipta Dharma, Miseon Kim, Kayoung Kim, Jinho Lee, Yongmo Ha, Jaeyong Lee, Jae-Won Jang
The integration of MoS2 and TiO2 into heterojunction structures has gained significant attention for its potential in advancing photoelectrochemical (PEC) systems for hydrogen generation and CO2 reduction. TiO2, with its high stability and strong oxidation power, suffers from a wide bandgap that limits its visible-light absorption, whereas MoS2, a two-dimensional (2D) transition metal dichalcogenide (TMDC), exhibits excellent catalytic properties and a narrow bandgap that enhances light absorption and charge transfer. The MoS2/TiO2 heterojunction effectively overcomes these limitations by facilitating charge separation, suppressing recombination losses, and expanding the light absorption range, making it a promising candidate for sustainable energy applications. Notably, MoS2/TiO2 heterojunctions have demonstrated versatility in PEC systems, functioning effectively as photoanodes and photocathodes. This review provides a detailed overview of MoS2/TiO2-based PEC architectures, including a comparative analysis of their anodic and cathodic roles. Furthermore, recent advances in synthesis strategies, interfacial engineering, charge transfer mechanisms, and performance enhancement techniques have been discussed comprehensively. Additionally, challenges such as interfacial charge recombination, stability issues, and scalable fabrication methods are addressed along with emerging strategies, including defect engineering, plasmonic enhancement, and multi-component heterostructures. By addressing these challenges, MoS2/TiO2 heterojunctions hold great promise for the future of solar-driven hydrogen production and carbon capture technologies, contributing to global efforts toward clean energy and environmental sustainability.
{"title":"Advances in MoS2/TiO2 heterojunctions for photoelectrochemical hydrogen generation and CO2 reduction: A comprehensive review","authors":"Do Wan Kim, Hadi Nugraha Cipta Dharma, Miseon Kim, Kayoung Kim, Jinho Lee, Yongmo Ha, Jaeyong Lee, Jae-Won Jang","doi":"10.1063/5.0273872","DOIUrl":"https://doi.org/10.1063/5.0273872","url":null,"abstract":"The integration of MoS2 and TiO2 into heterojunction structures has gained significant attention for its potential in advancing photoelectrochemical (PEC) systems for hydrogen generation and CO2 reduction. TiO2, with its high stability and strong oxidation power, suffers from a wide bandgap that limits its visible-light absorption, whereas MoS2, a two-dimensional (2D) transition metal dichalcogenide (TMDC), exhibits excellent catalytic properties and a narrow bandgap that enhances light absorption and charge transfer. The MoS2/TiO2 heterojunction effectively overcomes these limitations by facilitating charge separation, suppressing recombination losses, and expanding the light absorption range, making it a promising candidate for sustainable energy applications. Notably, MoS2/TiO2 heterojunctions have demonstrated versatility in PEC systems, functioning effectively as photoanodes and photocathodes. This review provides a detailed overview of MoS2/TiO2-based PEC architectures, including a comparative analysis of their anodic and cathodic roles. Furthermore, recent advances in synthesis strategies, interfacial engineering, charge transfer mechanisms, and performance enhancement techniques have been discussed comprehensively. Additionally, challenges such as interfacial charge recombination, stability issues, and scalable fabrication methods are addressed along with emerging strategies, including defect engineering, plasmonic enhancement, and multi-component heterostructures. By addressing these challenges, MoS2/TiO2 heterojunctions hold great promise for the future of solar-driven hydrogen production and carbon capture technologies, contributing to global efforts toward clean energy and environmental sustainability.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"48 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145484689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Neurological disorders encompass a wide range of debilitating conditions, including neurodegenerative diseases, brain tumors, and genetic disorders. By targeting underlying genetic factors, gene therapy has shown great potential to treat neurological disorders. However, successful implementation of gene therapy critically depends on the capacity of the gene delivery system to address the multifactorial challenges associated with brain-targeted gene delivery, encompassing biosafety, blood-brain barrier (BBB) permeability, transduction efficiency, cell-type specificity, payload capacity, and immunogenic potential. Currently, viral vectors are most widely used for clinical gene therapy applications due to their high BBB-crossing and cell transfection efficiencies. However, the safety concerns and strict gene packaging limit of viral vectors greatly restrict their future potential. Non-viral gene vectors, including exosomes, lipids, polymers, and inorganic structures, have been extensively studied in the recent decade, expecting as preferred vectors for gene delivery due to their better safety, higher gene loading efficiency, lower costs, and easier tailorability. In this review, we first discuss the potentials and challenges of gene therapeutics for brain diseases. Then we summarize the recent progress of non-viral brain-targeted gene delivery vectors and examine the key technical issues for high gene delivery efficacy. In particular, we will explore the current clinical prospects and challenges associated with translating these vehicles into effective treatments for neurological disorders. Finally, we will take a perspective on the future opportunities of non-viral delivery systems for clinical gene therapy of neurological disorders.
{"title":"Recent advances and clinical prospects of non-viral brain-targeted gene delivery systems","authors":"Shuyu Wang, Linlin Xu, Feihe Ma, Mengchen Xu, Guidong Chen, Dayuan Wang, Xiaohui Wu, Peng Wang, Jinpu Yu, Linqi Shi","doi":"10.1063/5.0255745","DOIUrl":"https://doi.org/10.1063/5.0255745","url":null,"abstract":"Neurological disorders encompass a wide range of debilitating conditions, including neurodegenerative diseases, brain tumors, and genetic disorders. By targeting underlying genetic factors, gene therapy has shown great potential to treat neurological disorders. However, successful implementation of gene therapy critically depends on the capacity of the gene delivery system to address the multifactorial challenges associated with brain-targeted gene delivery, encompassing biosafety, blood-brain barrier (BBB) permeability, transduction efficiency, cell-type specificity, payload capacity, and immunogenic potential. Currently, viral vectors are most widely used for clinical gene therapy applications due to their high BBB-crossing and cell transfection efficiencies. However, the safety concerns and strict gene packaging limit of viral vectors greatly restrict their future potential. Non-viral gene vectors, including exosomes, lipids, polymers, and inorganic structures, have been extensively studied in the recent decade, expecting as preferred vectors for gene delivery due to their better safety, higher gene loading efficiency, lower costs, and easier tailorability. In this review, we first discuss the potentials and challenges of gene therapeutics for brain diseases. Then we summarize the recent progress of non-viral brain-targeted gene delivery vectors and examine the key technical issues for high gene delivery efficacy. In particular, we will explore the current clinical prospects and challenges associated with translating these vehicles into effective treatments for neurological disorders. Finally, we will take a perspective on the future opportunities of non-viral delivery systems for clinical gene therapy of neurological disorders.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"1 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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