Anti-ferroelectric thin films are renowned for their signature double hysteresis loops and sheds light on the distinguished energy storage capabilities of dielectric capacitors in modern electronic devices. However, anti-ferroelectric capacitors are still facing the dual challenges of low energy density and efficiency to achieve state-of-the-art performance. Their large hysteresis and sharp first-order phase transition usually results in a low energy storage efficiency and easy breakdown, severely obscuring its future application. In this study, we demonstrate that anti-ferroelectric (Pb0.97La0.02)(Zr1−xSnx)O3 epitaxial thin films exhibit enhanced energy storage performance through local structural heterogeneity to moderate the first-order phase transition by calculating the corresponding polarization as a function of switching time for the first time. The films exhibit remarkable enhanced breakdown strength (∼3.47 MV/cm, ∼5 times the value for PbZrO3) and energy storage performance. Our endeavors have culminated in the ingenious formulation of a novel strategy, namely, the postponement of polarization processes, thereby elevating the breakdown strength and total energy storage performance. This landmark achievement has unveiled a fresh vista of investigative opportunities for advancing the energy storage prowess of electric dielectrics.
{"title":"Exploring anti-ferroelectric thin films with high energy storage performance by moderating phase transition","authors":"Tianfu Zhang, Yangyang Si, Xudong Li, Yijie Li, Tao Wang, Qinghua Zhang, Yunlong Tang, Zuhuang Chen","doi":"10.1063/5.0226576","DOIUrl":"https://doi.org/10.1063/5.0226576","url":null,"abstract":"Anti-ferroelectric thin films are renowned for their signature double hysteresis loops and sheds light on the distinguished energy storage capabilities of dielectric capacitors in modern electronic devices. However, anti-ferroelectric capacitors are still facing the dual challenges of low energy density and efficiency to achieve state-of-the-art performance. Their large hysteresis and sharp first-order phase transition usually results in a low energy storage efficiency and easy breakdown, severely obscuring its future application. In this study, we demonstrate that anti-ferroelectric (Pb0.97La0.02)(Zr1−xSnx)O3 epitaxial thin films exhibit enhanced energy storage performance through local structural heterogeneity to moderate the first-order phase transition by calculating the corresponding polarization as a function of switching time for the first time. The films exhibit remarkable enhanced breakdown strength (∼3.47 MV/cm, ∼5 times the value for PbZrO3) and energy storage performance. Our endeavors have culminated in the ingenious formulation of a novel strategy, namely, the postponement of polarization processes, thereby elevating the breakdown strength and total energy storage performance. This landmark achievement has unveiled a fresh vista of investigative opportunities for advancing the energy storage prowess of electric dielectrics.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"30 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142487197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Field-effect transistors are crucial components for modern electronics, generating significant research and profitable interest. Metal halide perovskites have recently emerged as a pioneering active material in solar cells, generating interest in their potential use in other electronic and (opto)electronic devices, including field-effect transistors and phototransistors. However, before they can be commercialized, they still face significant challenges owing to their immanent instabilities with respect to heat, moisture, and light. In contrast, due to their exceptional environmental stability, the newly emerging two-dimensional Ruddlesden–Popper type perovskites have garnered significant recognition. The current state of the field is covered in this review article, as are the problems, and a perspective for the scenarios of perovskite field-effect transistors. The effects of temperature, light, and measurement conditions are taken into account, as well as the physics of the device and the fundamental mechanisms that drive these devices, such as ion migration and ionic defects. Subsequently, the performance of perovskite transistors and phototransistors described so far is analyzed and critically evaluated. Finally, the major roadblocks to perovskite transistor advancement are identified and explored. The lessons learned from other perovskite optoelectronic devices are investigated in order to address these obstacles and bring these devices closer to industrial implementation.
{"title":"2D layered halide perovskite for field-effect transistors","authors":"Tufan Paul, Silvia Colella, Emanuele Orgiu","doi":"10.1063/5.0206658","DOIUrl":"https://doi.org/10.1063/5.0206658","url":null,"abstract":"Field-effect transistors are crucial components for modern electronics, generating significant research and profitable interest. Metal halide perovskites have recently emerged as a pioneering active material in solar cells, generating interest in their potential use in other electronic and (opto)electronic devices, including field-effect transistors and phototransistors. However, before they can be commercialized, they still face significant challenges owing to their immanent instabilities with respect to heat, moisture, and light. In contrast, due to their exceptional environmental stability, the newly emerging two-dimensional Ruddlesden–Popper type perovskites have garnered significant recognition. The current state of the field is covered in this review article, as are the problems, and a perspective for the scenarios of perovskite field-effect transistors. The effects of temperature, light, and measurement conditions are taken into account, as well as the physics of the device and the fundamental mechanisms that drive these devices, such as ion migration and ionic defects. Subsequently, the performance of perovskite transistors and phototransistors described so far is analyzed and critically evaluated. Finally, the major roadblocks to perovskite transistor advancement are identified and explored. The lessons learned from other perovskite optoelectronic devices are investigated in order to address these obstacles and bring these devices closer to industrial implementation.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"75 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142486504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Recently, several experimental works have appeared in the literature where induced magnetism in single- and few-layer graphene (SL-gr and FL-gr) interfaced with layered van der Waals materials was investigated via the application of the anomalous Hall effect (AHE). In most of these works, it is suggested that the observation of the AHE in such systems can be explained by a magnetic exchange interaction appearing at the interface between graphene and the underlying magnetic insulator. Considering the recently studied FL-graphene/bulk-CuCrP2S6 system as an example, our careful and rigorous analysis of recent experimental and theoretical data presented in the literature shows that the claimed observation of the AHE and magnetic proximity effect in this system is not supported. Moreover, the theoretically calculated electronic structures of the studied system contain serious errors and flaws that cannot be considered as an accurate description of such an interface and cannot be taken as solid support for the proposed proximity effect.
{"title":"On the study of proximity magnetism in van der Waals graphene/CuCrP2S6 heterostructure via the anomalous Hall effect","authors":"Yuriy Dedkov, Elena Voloshina","doi":"10.1063/5.0223563","DOIUrl":"https://doi.org/10.1063/5.0223563","url":null,"abstract":"Recently, several experimental works have appeared in the literature where induced magnetism in single- and few-layer graphene (SL-gr and FL-gr) interfaced with layered van der Waals materials was investigated via the application of the anomalous Hall effect (AHE). In most of these works, it is suggested that the observation of the AHE in such systems can be explained by a magnetic exchange interaction appearing at the interface between graphene and the underlying magnetic insulator. Considering the recently studied FL-graphene/bulk-CuCrP2S6 system as an example, our careful and rigorous analysis of recent experimental and theoretical data presented in the literature shows that the claimed observation of the AHE and magnetic proximity effect in this system is not supported. Moreover, the theoretically calculated electronic structures of the studied system contain serious errors and flaws that cannot be considered as an accurate description of such an interface and cannot be taken as solid support for the proposed proximity effect.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"19 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142448458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuan Gao, Guanyu Chen, Luo Qi, Wujie Fu, Zifeng Yuan, Aaron J. Danner
The demand for efficient solvers of complicated combinatorial optimization problems, especially those classified as NP-complete or NP-hard, has recently led to increased exploration of novel computing architectures. One prominent collective state computing paradigm embodied in the so-called Ising machines has recently attracted considerable research attention due to its ability to optimize complex problems with large numbers of interacting variables. Ising model-inspired solvers, thus named due to mathematical similarities to the well-known model from solid-state physics, represent a promising alternative to traditional von Neumann computer architectures due to their high degree of inherent parallelism. While there are many possible physical realizations of Ising solvers, just as there are many possible implementations of any binary computer, photonic Ising machines (PIMs) use primarily optical components for computation, taking advantage of features like lower power consumption, fast calculation speeds, the leveraging of physical optics to perform the calculations themselves, possessing decent scalability and noise tolerance. Photonic computing in the form of PIMs may offer certain computational advantages that are not easily achieved with non-photonic approaches and is nonetheless an altogether fascinating application of photonics to computing. In this review, we provide an overview of Ising machines generally, introducing why they are useful, what types of problems they can tackle, and how different Ising solvers can be compared and benchmarked. We delineate their various operational mechanisms, advantages, and limitations vis-à-vis non-photonic Ising machines. We describe their scalability, interconnectivity, performance, and physical dimensions. As research in PIMs continues to progress, there is a potential that photonic computing could well emerge as a way to handle large and challenging optimization problems across diverse domains. This review serves as a comprehensive resource for researchers and practitioners interested in understanding capabilities and potential of PIMs in addressing such complex optimization problems.
{"title":"Photonic Ising machines for combinatorial optimization problems","authors":"Yuan Gao, Guanyu Chen, Luo Qi, Wujie Fu, Zifeng Yuan, Aaron J. Danner","doi":"10.1063/5.0216656","DOIUrl":"https://doi.org/10.1063/5.0216656","url":null,"abstract":"The demand for efficient solvers of complicated combinatorial optimization problems, especially those classified as NP-complete or NP-hard, has recently led to increased exploration of novel computing architectures. One prominent collective state computing paradigm embodied in the so-called Ising machines has recently attracted considerable research attention due to its ability to optimize complex problems with large numbers of interacting variables. Ising model-inspired solvers, thus named due to mathematical similarities to the well-known model from solid-state physics, represent a promising alternative to traditional von Neumann computer architectures due to their high degree of inherent parallelism. While there are many possible physical realizations of Ising solvers, just as there are many possible implementations of any binary computer, photonic Ising machines (PIMs) use primarily optical components for computation, taking advantage of features like lower power consumption, fast calculation speeds, the leveraging of physical optics to perform the calculations themselves, possessing decent scalability and noise tolerance. Photonic computing in the form of PIMs may offer certain computational advantages that are not easily achieved with non-photonic approaches and is nonetheless an altogether fascinating application of photonics to computing. In this review, we provide an overview of Ising machines generally, introducing why they are useful, what types of problems they can tackle, and how different Ising solvers can be compared and benchmarked. We delineate their various operational mechanisms, advantages, and limitations vis-à-vis non-photonic Ising machines. We describe their scalability, interconnectivity, performance, and physical dimensions. As research in PIMs continues to progress, there is a potential that photonic computing could well emerge as a way to handle large and challenging optimization problems across diverse domains. This review serves as a comprehensive resource for researchers and practitioners interested in understanding capabilities and potential of PIMs in addressing such complex optimization problems.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"56 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142436309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Muhammad Avicenna Naradipa, Angga Dito Fauzi, Bin Leong Ong, Muhammad Aziz Majidi, Caozheng Diao, Ganesh Ji Omar, Ariando Ariando, Mark B. H. Breese, Eng Soon Tok, Andrivo Rusydi
Ferromagnetic insulators and plasmons have attracted a lot of interest due to their rich fundamental science and applications. Recent research efforts have been made to find dopant-free ferromagnetic insulators and unconventional plasmons independently both in strongly correlated electron systems. However, our understanding of them is still lacking. Existing dopant-free ferromagnetic insulator materials are mostly limited to complex d- or f-systems with extremely low Curie temperature, low-symmetry structure, and strict growth conditions on specific substrates, limiting their compatibility with industrial applications. Unconventional plasmon is, on the other hand, a quasiparticle that originates from the collective excitation of correlated-charges, yet they are rarely explored, particularly in ferromagnetic insulator materials. Herewith, we present a novel, room temperature dopant-free ferromagnetic Mott-like insulator with a high-symmetry structure in unconventional strongly correlated s band of low-dimensional highly oriented single-crystal gold quantum dots (HOSG-QDs) on MgO(001). Interestingly, HOSG-QDs show new high-energy correlated-plasmons with low-plasmonics-loss. With a series of state-of-the-art experimental techniques, we find that the Mott-insulating state is tunable with surprisingly strong spin-splitting and spin polarization accompanied by strong s–s transitions, disappearance of Drude response, and generating new Mott-like gap. Supported with a series of theoretical calculations, the interplay of quantum confinement, many-body electronic correlations, and hybridizations tunes electron–electron correlations in s band and determines the ferromagnetism, Mott-like insulator, and high-energy correlated-plasmons. Our result shows a new class of room temperature dopant-free ferromagnetic Mott-like insulator and high-energy correlated-plasmons with low-loss in strongly correlated s band and opens unexplored applications of low-dimensional gold in spin field-effect transistors and plasmonics.
铁磁绝缘体和等离子体因其丰富的基础科学和应用而备受关注。近年来，人们一直在努力寻找强相关电子系统中的无掺杂铁磁绝缘体和独立的非常规等离子体。然而，我们对它们的了解仍然不足。现有的无掺杂铁磁绝缘体材料大多局限于复杂的 d 或 f 系统，具有极低的居里温度、低对称性结构以及在特定基底上的严格生长条件，限制了它们与工业应用的兼容性。另一方面，非常规等离子体是一种源自相关电荷集体激发的准粒子，但它们很少被探索，尤其是在铁磁绝缘体材料中。在此，我们展示了一种新型的室温无掺杂铁磁性莫特样绝缘体，它在氧化镁（001）上的低维高取向单晶金量子点（HOSG-QDs）的非常规强相关 S 波段中具有高对称性结构。有趣的是，HOSG-QDs 显示出新的高能量相关质子和低质子损耗。通过一系列最先进的实验技术，我们发现莫特绝缘态是可调的，具有惊人的强自旋分裂和自旋极化，同时伴有强 s-s 转变、德鲁德响应消失以及产生新的莫特样间隙。在一系列理论计算的支持下，量子约束、多体电子关联和杂化的相互作用调整了 s 波段的电子-电子关联，并决定了铁磁性、类莫特绝缘体和高能相关质子。我们的研究结果表明了一类新的室温无掺杂铁磁性类莫特绝缘体和在强相关 s 波段具有低损耗的高能相关等离子体，并开辟了低维金在自旋场效应晶体管和等离子体中的未探索应用。
{"title":"Novel dopant-free ferromagnetic Mott-like insulator and high-energy correlated-plasmons in unconventional strongly correlated s band of low-dimensional gold","authors":"Muhammad Avicenna Naradipa, Angga Dito Fauzi, Bin Leong Ong, Muhammad Aziz Majidi, Caozheng Diao, Ganesh Ji Omar, Ariando Ariando, Mark B. H. Breese, Eng Soon Tok, Andrivo Rusydi","doi":"10.1063/5.0177314","DOIUrl":"https://doi.org/10.1063/5.0177314","url":null,"abstract":"Ferromagnetic insulators and plasmons have attracted a lot of interest due to their rich fundamental science and applications. Recent research efforts have been made to find dopant-free ferromagnetic insulators and unconventional plasmons independently both in strongly correlated electron systems. However, our understanding of them is still lacking. Existing dopant-free ferromagnetic insulator materials are mostly limited to complex d- or f-systems with extremely low Curie temperature, low-symmetry structure, and strict growth conditions on specific substrates, limiting their compatibility with industrial applications. Unconventional plasmon is, on the other hand, a quasiparticle that originates from the collective excitation of correlated-charges, yet they are rarely explored, particularly in ferromagnetic insulator materials. Herewith, we present a novel, room temperature dopant-free ferromagnetic Mott-like insulator with a high-symmetry structure in unconventional strongly correlated s band of low-dimensional highly oriented single-crystal gold quantum dots (HOSG-QDs) on MgO(001). Interestingly, HOSG-QDs show new high-energy correlated-plasmons with low-plasmonics-loss. With a series of state-of-the-art experimental techniques, we find that the Mott-insulating state is tunable with surprisingly strong spin-splitting and spin polarization accompanied by strong s–s transitions, disappearance of Drude response, and generating new Mott-like gap. Supported with a series of theoretical calculations, the interplay of quantum confinement, many-body electronic correlations, and hybridizations tunes electron–electron correlations in s band and determines the ferromagnetism, Mott-like insulator, and high-energy correlated-plasmons. Our result shows a new class of room temperature dopant-free ferromagnetic Mott-like insulator and high-energy correlated-plasmons with low-loss in strongly correlated s band and opens unexplored applications of low-dimensional gold in spin field-effect transistors and plasmonics.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"13 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142436310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaoqi Liao, Chunmei Wang, Duo Zhao, Wei Tang, Huawei Liang, Yu-Jia Zeng, Chris Van Haesendonck, Qinghai Song, Haoliang Liu
Exchange bias (EB) is normally created by the interfacial exchange coupling at a ferromagnetic/antiferromagnetic (FM/AFM) interface. FM/AFM interfaces have also been proved to perform enhanced spin angular momentum transfer efficiency in spin pumping (SP), compared with typical FM/nonmagnetic interfaces. Here, we report an unexpected EB and enhanced SP between a ferromagnet and semiconductor. Considerable EB has been observed in Co films grown on ZnO single crystal due to the interface antiferromagnetism of the Zn1−xCoxO (x depends on the Co solubility limit in ZnO) layer. Moreover, SP measurements demonstrate a giant spin pumping efficiency at the Co/ZnO interface with a bump (spin mixing conductance Geff↑↓= 28 nm−2) around the blocking temperature TB ∼ 75 K. The enhanced SP is further confirmed by inverse spin Hall effect measurements and the spin Hall angle θISHE of Zn1−xCoxO is estimated to be 0.011. The bound magnetic polarons with s–d exchange interaction between donor electrons and magnetic cation ions in Zn1−xCoxO play a key role in the formation of antiferromagnetism with giant Geff↑↓. Our work provides a new insight into spin physics at FM/semiconducting interfaces.
{"title":"Unconventional exchange bias and enhanced spin pumping efficiency due to diluted magnetic oxide at the Co/ZnO interface","authors":"Xiaoqi Liao, Chunmei Wang, Duo Zhao, Wei Tang, Huawei Liang, Yu-Jia Zeng, Chris Van Haesendonck, Qinghai Song, Haoliang Liu","doi":"10.1063/5.0209098","DOIUrl":"https://doi.org/10.1063/5.0209098","url":null,"abstract":"Exchange bias (EB) is normally created by the interfacial exchange coupling at a ferromagnetic/antiferromagnetic (FM/AFM) interface. FM/AFM interfaces have also been proved to perform enhanced spin angular momentum transfer efficiency in spin pumping (SP), compared with typical FM/nonmagnetic interfaces. Here, we report an unexpected EB and enhanced SP between a ferromagnet and semiconductor. Considerable EB has been observed in Co films grown on ZnO single crystal due to the interface antiferromagnetism of the Zn1−xCoxO (x depends on the Co solubility limit in ZnO) layer. Moreover, SP measurements demonstrate a giant spin pumping efficiency at the Co/ZnO interface with a bump (spin mixing conductance Geff↑↓= 28 nm−2) around the blocking temperature TB ∼ 75 K. The enhanced SP is further confirmed by inverse spin Hall effect measurements and the spin Hall angle θISHE of Zn1−xCoxO is estimated to be 0.011. The bound magnetic polarons with s–d exchange interaction between donor electrons and magnetic cation ions in Zn1−xCoxO play a key role in the formation of antiferromagnetism with giant Geff↑↓. Our work provides a new insight into spin physics at FM/semiconducting interfaces.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"32 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142398304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Synaptic transistors, which emulate the behavior of biological synapses, play a vital role in information processing and storage in neuromorphic systems. However, the occurrence of excessive current spikes during the updating of synaptic weight poses challenges to the stability, accuracy, and power consumption of synaptic transistors. In this work, we experimentally investigate the main factors for the generation of current spikes in the three-terminal synaptic transistors that use LiCoO2 (LCO), a mixed ionic-electronic conductor, as the channel layer. Kelvin probe force microscopy and impedance testing results reveal that ion migration and adsorption at the drain–source-channel interface cause the current spikes that compromise the device's performance. By controlling the crystal orientation of the LCO channel layer to impede the in-plane migration of lithium ions, we show that the LCO channel layer with the (104) preferred orientation can effectively suppress both the peak current and power consumption in the synaptic transistors. Our study provides a unique insight into controlling the crystallographic orientation for the design of high-speed, high-robustness, and low-power consumption nano-memristor devices.
{"title":"Inhibiting the current spikes within the channel layer of LiCoO2-based three-terminal synaptic transistors","authors":"Yue Chen, Weijian Zhang, Yuezhen Lu, Minzhen Chen, Jing Chen, Hongyi Lu, Yubiao Niu, Guiying Zhao, Jianming Tao, Jiaxin Li, Yingbin Lin, Oleg Kolosov, Zhigao Huang","doi":"10.1063/5.0200811","DOIUrl":"https://doi.org/10.1063/5.0200811","url":null,"abstract":"Synaptic transistors, which emulate the behavior of biological synapses, play a vital role in information processing and storage in neuromorphic systems. However, the occurrence of excessive current spikes during the updating of synaptic weight poses challenges to the stability, accuracy, and power consumption of synaptic transistors. In this work, we experimentally investigate the main factors for the generation of current spikes in the three-terminal synaptic transistors that use LiCoO2 (LCO), a mixed ionic-electronic conductor, as the channel layer. Kelvin probe force microscopy and impedance testing results reveal that ion migration and adsorption at the drain–source-channel interface cause the current spikes that compromise the device's performance. By controlling the crystal orientation of the LCO channel layer to impede the in-plane migration of lithium ions, we show that the LCO channel layer with the (104) preferred orientation can effectively suppress both the peak current and power consumption in the synaptic transistors. Our study provides a unique insight into controlling the crystallographic orientation for the design of high-speed, high-robustness, and low-power consumption nano-memristor devices.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"207 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142398306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Heung-Sik Park, Jinhyuk Jang, Ji Soo Lim, Jeonghun Suh, Si-Young Choi, Chan-Ho Yang
Vacancy-ordered perovskite oxides are attracting attention due to their diverse functions such as resistive switching, electrocatalytic activity, oxygen diffusivity, and ferroelectricity. It is important to clarify the chemical lattice strains arising from compositional changes and the associated vacancy order–disorder phase transitions at the atomic scale. Here, we elucidate the intermediate process of a topotactic phase transition in Ca-doped bismuth ferrite films consisting of alternating stacks of oxygen perovskite layers and a brownmillerite-type oxygen vacancy layer. We use Raman spectroscopy and transmission electron microscopy to closely examine the evolution of local strains exerted on the constituent sub-layers by electrochemical oxidation. A negative Raman chemical shift is observed during oxidation, which is linearly correlated with the local negative chemical expansivity of the oxygen layer. It seemingly contradicts with the general trend that oxides undergo lattice contraction upon oxidation. Oxygen vacancies initially confined in the vacancy layers can be understood to diffuse into the oxygen layers during melting of the ordered structure. The finding deepens our understanding of the electro-chemo-mechanical coupling of vacancy-ordered oxides.
{"title":"Oxygen vacancy order–disorder transition process during topotactic filament formation in a perovskite oxide tracked by Raman microscopy and transmission electron microscopy","authors":"Heung-Sik Park, Jinhyuk Jang, Ji Soo Lim, Jeonghun Suh, Si-Young Choi, Chan-Ho Yang","doi":"10.1063/5.0212526","DOIUrl":"https://doi.org/10.1063/5.0212526","url":null,"abstract":"Vacancy-ordered perovskite oxides are attracting attention due to their diverse functions such as resistive switching, electrocatalytic activity, oxygen diffusivity, and ferroelectricity. It is important to clarify the chemical lattice strains arising from compositional changes and the associated vacancy order–disorder phase transitions at the atomic scale. Here, we elucidate the intermediate process of a topotactic phase transition in Ca-doped bismuth ferrite films consisting of alternating stacks of oxygen perovskite layers and a brownmillerite-type oxygen vacancy layer. We use Raman spectroscopy and transmission electron microscopy to closely examine the evolution of local strains exerted on the constituent sub-layers by electrochemical oxidation. A negative Raman chemical shift is observed during oxidation, which is linearly correlated with the local negative chemical expansivity of the oxygen layer. It seemingly contradicts with the general trend that oxides undergo lattice contraction upon oxidation. Oxygen vacancies initially confined in the vacancy layers can be understood to diffuse into the oxygen layers during melting of the ordered structure. The finding deepens our understanding of the electro-chemo-mechanical coupling of vacancy-ordered oxides.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"16 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142398302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sandeep Kumar Lakhera, K. Priyanga Kangeyan, Crescentia Yazhini S, Shiny Golda A, Neppolian Bernaurdshaw
Significant efforts have been dedicated to hydrogen production through photocatalytic water splitting (PWS) over the past five decades. However, achieving commercially viable solar-to-hydrogen conversion efficiency in PWS systems remains elusive. These systems face intrinsic and extrinsic challenges, such as inadequate light absorption, insufficient charge separation, limited redox active sites, low surface area, and scalability issues in practical designs. To address these issues, conventional strategies including heterojunction engineering, plasmonics, hybridization, lattice defects, sensitization, and upconversion processes have been extensively employed. More recently, innovative hybrid strategies like photonic crystal-assisted and polarization field-assisted PWS have emerged, which improve light absorption and charge separation by harnessing the slow photon effect, multiple light scattering, and the piezoelectric, pyroelectric, and ferroelectric properties of materials. This review article aims to provide a comprehensive examination and summary of these new synergistic hybrid approaches, integrating plasmonic effects, upconversion processes, and photonic crystal photocatalysis. It also explores the role of temperature in suppressing exciton recombination during photothermic photocatalysis. This article also highlights emerging strategies such as the effects of magnetic fields, periodic illumination, many-body large-hole polaron, and anapole excitations, which hold significant potential to advance PWS technology and facilitate renewable hydrogen generation.
{"title":"Advances in hybrid strategies for enhanced photocatalytic water splitting: Bridging conventional and emerging methods","authors":"Sandeep Kumar Lakhera, K. Priyanga Kangeyan, Crescentia Yazhini S, Shiny Golda A, Neppolian Bernaurdshaw","doi":"10.1063/5.0218539","DOIUrl":"https://doi.org/10.1063/5.0218539","url":null,"abstract":"Significant efforts have been dedicated to hydrogen production through photocatalytic water splitting (PWS) over the past five decades. However, achieving commercially viable solar-to-hydrogen conversion efficiency in PWS systems remains elusive. These systems face intrinsic and extrinsic challenges, such as inadequate light absorption, insufficient charge separation, limited redox active sites, low surface area, and scalability issues in practical designs. To address these issues, conventional strategies including heterojunction engineering, plasmonics, hybridization, lattice defects, sensitization, and upconversion processes have been extensively employed. More recently, innovative hybrid strategies like photonic crystal-assisted and polarization field-assisted PWS have emerged, which improve light absorption and charge separation by harnessing the slow photon effect, multiple light scattering, and the piezoelectric, pyroelectric, and ferroelectric properties of materials. This review article aims to provide a comprehensive examination and summary of these new synergistic hybrid approaches, integrating plasmonic effects, upconversion processes, and photonic crystal photocatalysis. It also explores the role of temperature in suppressing exciton recombination during photothermic photocatalysis. This article also highlights emerging strategies such as the effects of magnetic fields, periodic illumination, many-body large-hole polaron, and anapole excitations, which hold significant potential to advance PWS technology and facilitate renewable hydrogen generation.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"13 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142385247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuxia Shen, Chongwen Li, Cheng Liu, Samantha Ann Reitz, Bin Chen, Edward H. Sargent
Perovskite solar cells have made significant progress in achieving high power conversion efficiency (>26%) in the past decade. However, achieving long-term stability comparable to established silicon solar cells is still a significant challenge, requiring further investigation into degradation mechanisms and continued exploration of interface engineering strategies. Here we review stability at the interfaces between perovskite and charge transport layers. These interfaces are particularly vulnerable to defects and degradation under external stresses such as heat, light, and bias, further compounded by their ionic nature and thermal expansion mismatch. To address these issues, strategies such as the use of additives, organic self-assembled monolayers, and low-dimensional perovskites have been developed to improve interface stability. These approaches enhance crystallinity, reduce defect-related recombination, and improve mechanical toughness.
{"title":"The impact of interface and heterostructure on the stability of perovskite-based solar cells","authors":"Yuxia Shen, Chongwen Li, Cheng Liu, Samantha Ann Reitz, Bin Chen, Edward H. Sargent","doi":"10.1063/5.0210109","DOIUrl":"https://doi.org/10.1063/5.0210109","url":null,"abstract":"Perovskite solar cells have made significant progress in achieving high power conversion efficiency (>26%) in the past decade. However, achieving long-term stability comparable to established silicon solar cells is still a significant challenge, requiring further investigation into degradation mechanisms and continued exploration of interface engineering strategies. Here we review stability at the interfaces between perovskite and charge transport layers. These interfaces are particularly vulnerable to defects and degradation under external stresses such as heat, light, and bias, further compounded by their ionic nature and thermal expansion mismatch. To address these issues, strategies such as the use of additives, organic self-assembled monolayers, and low-dimensional perovskites have been developed to improve interface stability. These approaches enhance crystallinity, reduce defect-related recombination, and improve mechanical toughness.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"54 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142385249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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