Mn-intercalated transition metal dichalcogenides (TMDs) are promising candidates for hosting helimagnetism, offering opportunities for next-generation spintronic applications. Despite their potential, key magnetic characteristics, including the intrinsic helix period, the critical magnetic field for phase transitions, and the role of shape anisotropy in modulating the spin textures, remain elusive. In this study, we investigate the helimagnetic properties of Mn1/3MX2 (M = Nb, Ta; X = S, Se) using first-principles calculations and micromagnetic simulations. Applying a rotation-state method, we extract the critical magnetic interaction parameters and successfully predict their helix periods, in agreement with experimental observations. By incorporating shape anisotropy into our theoretical framework, we elucidate its influence on spin configurations and clarify the distinct helimagnetic behaviors observed in bulk crystals and thin films. Furthermore, we propose a new approach to determine the critical magnetic field based on the slope of the magnetization curve in the low-field regime. Our results offer the first quantitative insights into the magnetic behavior of Mn-intercalated TMDs and establish a predictive framework for understanding helimagnetism in this emerging material class.
mn嵌入过渡金属二硫族化物（TMDs）是承载helimagism的有希望的候选者，为下一代自旋电子应用提供了机会。尽管它们具有潜力，但关键的磁特性，包括固有螺旋周期，相变的临界磁场，以及形状各向异性在调制自旋织构中的作用，仍然难以捉摸。在本研究中，我们利用第一性原理计算和微磁模拟研究了Mn1/3MX2 （M = Nb, Ta; X = S, Se）的helmagnetic性质。应用旋转状态法，我们提取了临界磁相互作用参数，并成功地预测了它们的螺旋周期，与实验观察结果一致。通过将形状各向异性纳入我们的理论框架，我们阐明了其对自旋构型的影响，并阐明了在块状晶体和薄膜中观察到的独特的helimagnetic行为。此外，我们还提出了一种基于低场磁化曲线斜率确定临界磁场的新方法。我们的研究结果首次提供了对mn插层tmd磁性行为的定量见解，并为理解这种新兴材料类别的helimnetic建立了预测框架。
{"title":"Are Mn-intercalated transition metal dichalcogenides helimagnetic?","authors":"Yun Chen, Kesong Yang","doi":"10.1063/5.0290971","DOIUrl":"https://doi.org/10.1063/5.0290971","url":null,"abstract":"Mn-intercalated transition metal dichalcogenides (TMDs) are promising candidates for hosting helimagnetism, offering opportunities for next-generation spintronic applications. Despite their potential, key magnetic characteristics, including the intrinsic helix period, the critical magnetic field for phase transitions, and the role of shape anisotropy in modulating the spin textures, remain elusive. In this study, we investigate the helimagnetic properties of Mn1/3MX2 (M = Nb, Ta; X = S, Se) using first-principles calculations and micromagnetic simulations. Applying a rotation-state method, we extract the critical magnetic interaction parameters and successfully predict their helix periods, in agreement with experimental observations. By incorporating shape anisotropy into our theoretical framework, we elucidate its influence on spin configurations and clarify the distinct helimagnetic behaviors observed in bulk crystals and thin films. Furthermore, we propose a new approach to determine the critical magnetic field based on the slope of the magnetization curve in the low-field regime. Our results offer the first quantitative insights into the magnetic behavior of Mn-intercalated TMDs and establish a predictive framework for understanding helimagnetism in this emerging material class.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"160 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145397176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Seung Gyo Jeong, Minjae Kim, Jin Young Oh, Youngeun Ham, In Hyeok Choi, Seong Won Cho, Jihyun Kim, Huimin Jeong, Byungmin Sohn, Tuson Park, Suyoun Lee, Jong Seok Lee, Deok-Yong Cho, Bongjae Kim, Woo Seok Choi
Engineering van Hove singularities (vHss) near the Fermi level, if feasible, offers a powerful route to control exotic quantum phases in electronic and magnetic behaviors. However, conventional approaches rely primarily on chemical and electrical doping and focus mainly on local electrical or optical measurements, limiting their applicability to coupled functionalities. In this study, a vHs-induced insulator-metal transition coupled with a ferromagnetic phase transition was empirically achieved in atomically designed quasi-2D SrRuO3 (SRO) superlattices via epitaxial strain engineering, which has not been observed in conventional 3D SRO systems. Theoretical calculations revealed that epitaxial strain effectively modulates the strength and energy positions of vHs of specific Ru orbitals, driving correlated phase transitions in the electronic and magnetic ground states. X-ray absorption spectroscopy confirmed the anisotropic electronic structure of quasi-2D SRO modulated by epitaxial strain. Magneto-optic Kerr effect and electrical transport measurements demonstrated modulated magnetic and electronic phases. Furthermore, magneto-electrical measurements detected significant anomalous Hall effect signals and ferromagnetic magnetoresistance, indicating the presence of magnetically coupled charge carriers in the 2D metallic regime. This study establishes strain engineering as a promising platform for tuning vHss and resultant itinerant ferromagnetism of low-dimensional correlated quantum systems.
{"title":"Strain engineering of van Hove singularity and coupled itinerant ferromagnetism in quasi-2D oxide superlattices","authors":"Seung Gyo Jeong, Minjae Kim, Jin Young Oh, Youngeun Ham, In Hyeok Choi, Seong Won Cho, Jihyun Kim, Huimin Jeong, Byungmin Sohn, Tuson Park, Suyoun Lee, Jong Seok Lee, Deok-Yong Cho, Bongjae Kim, Woo Seok Choi","doi":"10.1063/5.0283547","DOIUrl":"https://doi.org/10.1063/5.0283547","url":null,"abstract":"Engineering van Hove singularities (vHss) near the Fermi level, if feasible, offers a powerful route to control exotic quantum phases in electronic and magnetic behaviors. However, conventional approaches rely primarily on chemical and electrical doping and focus mainly on local electrical or optical measurements, limiting their applicability to coupled functionalities. In this study, a vHs-induced insulator-metal transition coupled with a ferromagnetic phase transition was empirically achieved in atomically designed quasi-2D SrRuO3 (SRO) superlattices via epitaxial strain engineering, which has not been observed in conventional 3D SRO systems. Theoretical calculations revealed that epitaxial strain effectively modulates the strength and energy positions of vHs of specific Ru orbitals, driving correlated phase transitions in the electronic and magnetic ground states. X-ray absorption spectroscopy confirmed the anisotropic electronic structure of quasi-2D SRO modulated by epitaxial strain. Magneto-optic Kerr effect and electrical transport measurements demonstrated modulated magnetic and electronic phases. Furthermore, magneto-electrical measurements detected significant anomalous Hall effect signals and ferromagnetic magnetoresistance, indicating the presence of magnetically coupled charge carriers in the 2D metallic regime. This study establishes strain engineering as a promising platform for tuning vHss and resultant itinerant ferromagnetism of low-dimensional correlated quantum systems.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"60 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145396392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper proposes an innovative omnidirectional antenna space radiation shaped resistor network model to analyze potential distribution characteristics in complex resistor networks and apply it to path planning. Through mathematical modeling based on Kirchhoff's laws and the recursive transformation method, combined with the discrete sine transform of the seventh kind and Chebyshev polynomials of the first kind, we derive precise formulas for node potentials and equivalent resistances. We further develop a novel path planning algorithm that leverages the natural decay properties of potentials, enhanced by directional deviation penalties and a backtracking mechanism. Comparative analyses with classical path planning algorithms demonstrate that the proposed method holds significant potential, particularly in dynamic environments. Finally, a fast algorithm for potential calculation is introduced, achieving a four- to five-fold improvement in computational efficiency over traditional approaches. These advances deepen research on resistor networks and provide strong support for applications in complex systems, autonomous driving, and wireless communications.
{"title":"Modeling of omnidirectional antenna space radiation shaped resistor networks and efficient path planning","authors":"Xiaoyu Jiang, Jianwei Dai, Yanpeng Zheng, Zhaolin Jiang","doi":"10.1063/5.0291210","DOIUrl":"https://doi.org/10.1063/5.0291210","url":null,"abstract":"This paper proposes an innovative omnidirectional antenna space radiation shaped resistor network model to analyze potential distribution characteristics in complex resistor networks and apply it to path planning. Through mathematical modeling based on Kirchhoff's laws and the recursive transformation method, combined with the discrete sine transform of the seventh kind and Chebyshev polynomials of the first kind, we derive precise formulas for node potentials and equivalent resistances. We further develop a novel path planning algorithm that leverages the natural decay properties of potentials, enhanced by directional deviation penalties and a backtracking mechanism. Comparative analyses with classical path planning algorithms demonstrate that the proposed method holds significant potential, particularly in dynamic environments. Finally, a fast algorithm for potential calculation is introduced, achieving a four- to five-fold improvement in computational efficiency over traditional approaches. These advances deepen research on resistor networks and provide strong support for applications in complex systems, autonomous driving, and wireless communications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"25 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145382906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lithium-metal anodes, with their unmatched theoretical capacity (3860 mAh g−1) and ultra-low electrochemical potential (−3.04 V vs standard hydrogen electrode), are pivotal for next-generation high-energy-density batteries. However, their practical deployment is hindered by persistent challenges—dendritic growth, unstable solid electrolyte interphases (SEIs), and severe volumetric expansion. Emerging as a transformative solution, three-dimensional (3D) printing enables the rational design of multiscale architectures (e.g., micro-lattice anodes and gradient-porous cathodes) and hybrid solid-state electrolytes to address these limitations. This review presents a pioneering synthesis of 3D printing's role in lithium-metal battery engineering, focusing on its capacity to regulate lithium-ion flux, stabilize SEIs, and suppress dendrite proliferation through hierarchical structural control. We systematically analyze four key additive manufacturing technologies (inkjet printing, direct ink writing, fused deposition modeling, and stereolithography), delineating their unique advantages in tailoring ion transport pathways and mechanical robustness. Furthermore, we propose multi-material co-printing strategies to resolve interfacial incompatibilities in monolithic lithium-metal batteries, a critical barrier in current research. By bridging additive manufacturing with electrochemical fundamentals, this work outlines a roadmap to harness 3D printing's full potential, addressing scalability challenges and advancing applications in aerospace, wearables, and biomedical devices where energy density and safety are paramount.
锂金属阳极具有无与伦比的理论容量（3860 mAh g - 1）和超低电化学电位（- 3.04 V vs标准氢电极），是下一代高能量密度电池的关键。然而，它们的实际部署受到持续挑战的阻碍-枝晶生长，不稳定的固体电解质界面（SEIs）和严重的体积膨胀。作为一种变革性的解决方案，三维（3D）打印使多尺度结构（例如微晶格阳极和梯度多孔阴极）和混合固态电解质的合理设计能够解决这些限制。本文综述了3D打印在锂金属电池工程中的开创性作用，重点介绍了其通过分层结构控制调节锂离子通量、稳定sei和抑制枝晶增殖的能力。我们系统地分析了四种关键的增材制造技术（喷墨打印、直接墨水书写、熔融沉积建模和立体光刻），描绘了它们在定制离子传输途径和机械稳健性方面的独特优势。此外，我们提出了多材料共打印策略来解决单片锂金属电池的界面不兼容性，这是当前研究中的一个关键障碍。通过将增材制造与电化学基础相结合，这项工作概述了利用3D打印的全部潜力的路线图，解决了可扩展性挑战，并推进了能量密度和安全性至关重要的航空航天，可穿戴设备和生物医学设备的应用。
{"title":"3D-printed lithium-metal batteries: Multiscale architectures, hybrid technologies, and monolithic integration for next-generation energy storage","authors":"Shengchen Yang, Dongdong Li","doi":"10.1063/5.0284782","DOIUrl":"https://doi.org/10.1063/5.0284782","url":null,"abstract":"Lithium-metal anodes, with their unmatched theoretical capacity (3860 mAh g−1) and ultra-low electrochemical potential (−3.04 V vs standard hydrogen electrode), are pivotal for next-generation high-energy-density batteries. However, their practical deployment is hindered by persistent challenges—dendritic growth, unstable solid electrolyte interphases (SEIs), and severe volumetric expansion. Emerging as a transformative solution, three-dimensional (3D) printing enables the rational design of multiscale architectures (e.g., micro-lattice anodes and gradient-porous cathodes) and hybrid solid-state electrolytes to address these limitations. This review presents a pioneering synthesis of 3D printing's role in lithium-metal battery engineering, focusing on its capacity to regulate lithium-ion flux, stabilize SEIs, and suppress dendrite proliferation through hierarchical structural control. We systematically analyze four key additive manufacturing technologies (inkjet printing, direct ink writing, fused deposition modeling, and stereolithography), delineating their unique advantages in tailoring ion transport pathways and mechanical robustness. Furthermore, we propose multi-material co-printing strategies to resolve interfacial incompatibilities in monolithic lithium-metal batteries, a critical barrier in current research. By bridging additive manufacturing with electrochemical fundamentals, this work outlines a roadmap to harness 3D printing's full potential, addressing scalability challenges and advancing applications in aerospace, wearables, and biomedical devices where energy density and safety are paramount.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"16 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145383020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Runqiu Wang, Guowei Han, Ying He, Shunda Qiao, Yufei Ma
In this paper, the performance of two self-designed lithium niobate tuning forks (LiNTF), round-head and tapered LiNTFs, was systematically explored in lithium niobate-enhanced photoacoustic spectroscopy (LiNPAS) and light-induced thermoelastic spectroscopy (LITES) sensors. Finite element analysis results revealed that the stress and surface charge density of the LiNTFs were higher than those of the standard quartz tuning fork (QTF), owing to the high piezoelectric coefficient and electromechanical coupling coefficient of the LiNbO3. The sensing performance of the two LiNTFs was experimentally evaluated, and acetylene (C2H2) was used as the test gas for performance validation. In the C2H2–LiNPAS system, the 2f signal peak values of the round-head LiNTF and the tapered LiNTF were 3.47 times and 4.29 times higher than those of the standard QTF, respectively. When the average time reached 1000 s, the minimum detection limits (MDLs) of the sensor based on round-head LiNTF and the tapered LiNTF were 723 and 450 ppb, respectively. In the C2H2–LITES system, the 2f signal peak values of the round-head LiNTF and the tapered LiNTF were found to be 3.79 times and 5.13 times higher than that of the standard QTF. The MDLs of the LITES sensor based on the round-head LiNTF and the tapered LiNTF were determined to be 101 and 52 ppb, respectively.
{"title":"Lithium niobate tuning fork-enhanced photoacoustic spectroscopy and light-induced thermoelastic spectroscopy","authors":"Runqiu Wang, Guowei Han, Ying He, Shunda Qiao, Yufei Ma","doi":"10.1063/5.0277336","DOIUrl":"https://doi.org/10.1063/5.0277336","url":null,"abstract":"In this paper, the performance of two self-designed lithium niobate tuning forks (LiNTF), round-head and tapered LiNTFs, was systematically explored in lithium niobate-enhanced photoacoustic spectroscopy (LiNPAS) and light-induced thermoelastic spectroscopy (LITES) sensors. Finite element analysis results revealed that the stress and surface charge density of the LiNTFs were higher than those of the standard quartz tuning fork (QTF), owing to the high piezoelectric coefficient and electromechanical coupling coefficient of the LiNbO3. The sensing performance of the two LiNTFs was experimentally evaluated, and acetylene (C2H2) was used as the test gas for performance validation. In the C2H2–LiNPAS system, the 2f signal peak values of the round-head LiNTF and the tapered LiNTF were 3.47 times and 4.29 times higher than those of the standard QTF, respectively. When the average time reached 1000 s, the minimum detection limits (MDLs) of the sensor based on round-head LiNTF and the tapered LiNTF were 723 and 450 ppb, respectively. In the C2H2–LITES system, the 2f signal peak values of the round-head LiNTF and the tapered LiNTF were found to be 3.79 times and 5.13 times higher than that of the standard QTF. The MDLs of the LITES sensor based on the round-head LiNTF and the tapered LiNTF were determined to be 101 and 52 ppb, respectively.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"55 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145311620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Low power consumption and fast response enabled by voltage control are core advantages of field-effect transistors. Similarly, in magnetoelectric random access memory (MeRAM), voltage-controlled magnetic anisotropy (VCMA) offers comparable advantages in assisting or directly inducing magnetization switching. Enhancing the VCMA coefficient is essential for fully realizing this functionality. In this work, first-principles calculations reveal that the Pt/Fe/MgO heterostructure exhibits a significant VCMA coefficient (β = −4394 fJ/V·m), which is mainly contributed by the Pt layer. It has been demonstrated that the large VCMA coefficient originates from four indispensable determinants associated with the Pt layer: (1) the strong spin–orbit coupling constant, (2) the high induced spin polarization, (3) electron accumulation/depletion on the Pt layer, and (4) the presence of Pt dz2 orbital states near the Fermi level. In consideration of practical application scenarios, Pt/Fe/MgO was further capped with an Au electrode layer and a dielectric BaTiO3 layer. However, the calculated results reveal a significant reduction in the VCMA coefficient for both structures. In contrast, introducing a 2D dielectric material, LaOBr, as a gate layer atop Pt/Fe/MgO, a comparably large VCMA coefficient (β = −4373 fJ/V·m) is obtained. This is attributed to the van der Waals nature of the LaOBr/Pt interface, which allows the Pt layer to meet the four determinants mentioned above. The insights into the factors governing the VCMA coefficient and the design of the LaOBr/Pt/Fe/MgO heterostructure provide valuable guidance for the development of next-generation, high-performance MeRAM devices with large VCMA.
{"title":"Voltage-controlled magnetic anisotropy in Pt/Fe/MgO and 2D dielectric LaOBr-capped Pt/Fe/MgO heterostructures","authors":"Xinzhuo Zhang, Shiming Yan, Wen Qiao, Ru Bai, Tiejun Zhou","doi":"10.1063/5.0281436","DOIUrl":"https://doi.org/10.1063/5.0281436","url":null,"abstract":"Low power consumption and fast response enabled by voltage control are core advantages of field-effect transistors. Similarly, in magnetoelectric random access memory (MeRAM), voltage-controlled magnetic anisotropy (VCMA) offers comparable advantages in assisting or directly inducing magnetization switching. Enhancing the VCMA coefficient is essential for fully realizing this functionality. In this work, first-principles calculations reveal that the Pt/Fe/MgO heterostructure exhibits a significant VCMA coefficient (β = −4394 fJ/V·m), which is mainly contributed by the Pt layer. It has been demonstrated that the large VCMA coefficient originates from four indispensable determinants associated with the Pt layer: (1) the strong spin–orbit coupling constant, (2) the high induced spin polarization, (3) electron accumulation/depletion on the Pt layer, and (4) the presence of Pt dz2 orbital states near the Fermi level. In consideration of practical application scenarios, Pt/Fe/MgO was further capped with an Au electrode layer and a dielectric BaTiO3 layer. However, the calculated results reveal a significant reduction in the VCMA coefficient for both structures. In contrast, introducing a 2D dielectric material, LaOBr, as a gate layer atop Pt/Fe/MgO, a comparably large VCMA coefficient (β = −4373 fJ/V·m) is obtained. This is attributed to the van der Waals nature of the LaOBr/Pt interface, which allows the Pt layer to meet the four determinants mentioned above. The insights into the factors governing the VCMA coefficient and the design of the LaOBr/Pt/Fe/MgO heterostructure provide valuable guidance for the development of next-generation, high-performance MeRAM devices with large VCMA.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"2017 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145295213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zheng Wang, Kangli Xu, Jialin Meng, Bo Feng, Tianyu Wang
Driven by the rapid advancement of the Internet of Things and artificial intelligence, computational power demands have experienced an exponential surge, thereby accentuating the inherent limitations of the conventional von Neumann architecture. Neuromorphic computing memristors are emerging as a promising solution to overcome this bottleneck. Among various material-based memristors, carbon-based memristors (CBMs) are particularly attractive due to their biocompatibility, flexibility, and stability, which make them well suited for next-generation neuromorphic applications. This review summarizes the recent advancements in CBMs and proposes potential application scenarios in neuromorphic computing. Representative CBMs and preparation methods of carbon-based materials in different dimensions (0D, 1D, 2D, and 3D) are presented, followed by structural, storage, and synaptic plasticity testing and switching mechanisms. The neural network architecture built by CBMs is summarized for image processing, wearable electronics, and three-dimensional integration. Finally, the future challenges and application prospects of CBMs are reviewed and summarized.
{"title":"Carbon-based memristors for neuromorphic computing","authors":"Zheng Wang, Kangli Xu, Jialin Meng, Bo Feng, Tianyu Wang","doi":"10.1063/5.0260582","DOIUrl":"https://doi.org/10.1063/5.0260582","url":null,"abstract":"Driven by the rapid advancement of the Internet of Things and artificial intelligence, computational power demands have experienced an exponential surge, thereby accentuating the inherent limitations of the conventional von Neumann architecture. Neuromorphic computing memristors are emerging as a promising solution to overcome this bottleneck. Among various material-based memristors, carbon-based memristors (CBMs) are particularly attractive due to their biocompatibility, flexibility, and stability, which make them well suited for next-generation neuromorphic applications. This review summarizes the recent advancements in CBMs and proposes potential application scenarios in neuromorphic computing. Representative CBMs and preparation methods of carbon-based materials in different dimensions (0D, 1D, 2D, and 3D) are presented, followed by structural, storage, and synaptic plasticity testing and switching mechanisms. The neural network architecture built by CBMs is summarized for image processing, wearable electronics, and three-dimensional integration. Finally, the future challenges and application prospects of CBMs are reviewed and summarized.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"37 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145282727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Despite their zero net magnetization, antiferromagnets and compensated ferrimagnets have great potential as electrically and optically activated spin sources. The absence of stray fields means that such spin sources can be placed in close proximity to other magnetic elements without disturbing their state. Recent advances have shown that antiferromagnets and compensated ferrimagnets can emit spin current pulses with timescales down to the picosecond range and in the presence of small or zero external magnetic fields. The spin currents emitted by antiferromagnets have been used in actual devices to induce the field-free switching of nearby ferromagnets. Here, we review the different ways of generating a spin current from a magnetically compensated material. We describe the theoretical models for spin generation and the experimental techniques adopted for measuring the spin currents in different time regimes.
{"title":"Spin emission from antiferromagnets and compensated ferrimagnets","authors":"C. Ciccarelli, G. Nava Antonio, J. Barker","doi":"10.1063/5.0273489","DOIUrl":"https://doi.org/10.1063/5.0273489","url":null,"abstract":"Despite their zero net magnetization, antiferromagnets and compensated ferrimagnets have great potential as electrically and optically activated spin sources. The absence of stray fields means that such spin sources can be placed in close proximity to other magnetic elements without disturbing their state. Recent advances have shown that antiferromagnets and compensated ferrimagnets can emit spin current pulses with timescales down to the picosecond range and in the presence of small or zero external magnetic fields. The spin currents emitted by antiferromagnets have been used in actual devices to induce the field-free switching of nearby ferromagnets. Here, we review the different ways of generating a spin current from a magnetically compensated material. We describe the theoretical models for spin generation and the experimental techniques adopted for measuring the spin currents in different time regimes.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"35 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145260723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. M. Anderson, C. R. Allemang, A. J. Leenheer, S. W. Schmucker, J. A. Ivie, D. M. Campbell, W. Lepkowski, X. Gao, P. Lu, C. Arose, T.-M. Lu, C. Halsey, T. D. England, D. R. Ward, D. A. Scrymgeour, S. Misra
Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure and can be used to create novel devices by defining metallic regions whose boundaries have single-atom abruptness. Incompatibility with the thermal and lithography process requirements for gated silicon transistor manufacturing have inhibited exploration of both how APAM can enhance CMOS performance and how transistor manufacturing steps can accelerate the discovery of new APAM device concepts. In this work, we introduce an APAM process that enables direct integration into the middle of a transistor manufacturing workflow. We show that a process that combines sputtering and annealing with a hardmask preserves a defining characteristic of APAM, a doping density far in excess of the solid solubility limit, while trading another, the atomic precision, for compatibility with manufacturing. The electrical characteristics of a chip combining a transistor with an APAM resistor show that the APAM module has only affected the transistor through the addition of a resistance and not by altering the transistor. This proof-of-concept demonstration also outlines the requirements and limitations of a unified APAM tool, which could be introduced into manufacturing environments, greatly expanding access to this technology and inspiring a new generation of devices with it.
{"title":"Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication","authors":"E. M. Anderson, C. R. Allemang, A. J. Leenheer, S. W. Schmucker, J. A. Ivie, D. M. Campbell, W. Lepkowski, X. Gao, P. Lu, C. Arose, T.-M. Lu, C. Halsey, T. D. England, D. R. Ward, D. A. Scrymgeour, S. Misra","doi":"10.1063/5.0278639","DOIUrl":"https://doi.org/10.1063/5.0278639","url":null,"abstract":"Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure and can be used to create novel devices by defining metallic regions whose boundaries have single-atom abruptness. Incompatibility with the thermal and lithography process requirements for gated silicon transistor manufacturing have inhibited exploration of both how APAM can enhance CMOS performance and how transistor manufacturing steps can accelerate the discovery of new APAM device concepts. In this work, we introduce an APAM process that enables direct integration into the middle of a transistor manufacturing workflow. We show that a process that combines sputtering and annealing with a hardmask preserves a defining characteristic of APAM, a doping density far in excess of the solid solubility limit, while trading another, the atomic precision, for compatibility with manufacturing. The electrical characteristics of a chip combining a transistor with an APAM resistor show that the APAM module has only affected the transistor through the addition of a resistance and not by altering the transistor. This proof-of-concept demonstration also outlines the requirements and limitations of a unified APAM tool, which could be introduced into manufacturing environments, greatly expanding access to this technology and inspiring a new generation of devices with it.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"64 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145247498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Md Ashiqur Rahman Laskar, Lennaert Wouters, Pieter Lagrain, Jill Serron, Nemanja Peric, Andrea Pondini, Pierre Eyben, Thomas Hantschel, Umberto Celano
Scanning spreading resistance microscopy (SSRM) has recently celebrated 30 years of existence when counting from the original patent of 1994. In this time, the technique has experienced an incredible journey with substantial evolutions that transformed SSRM from a small-scale experiment into a staple for chip manufacturing laboratories for physical analysis of materials, failure analysis, and process development of integrated circuits. As the nanoelectronics industry is ready for a new inflection point, with the introduction of nanosheet field-effect transistor to replace FinFETs and cell track scaling architectures such as the complementary field-effect transistors, SSRM is once again at a turning point. This review aims to highlight the state-of-the-art while discussing the emerging challenges introduced by the ever-increasing complexity in complementary metal–oxide–semiconductor (CMOS) manufacturing. We start by illustrating the unique capability of the SSRM technique, its origin, and its evolution. Next, we continue by showing the considerable research effort that enabled SSRM to transition to a tomographic sensing method in support of FinFET transistors. Here, the high aspect ratio fin geometry and the complex contacts technology have imposed important modifications to the original method. Later, we elaborate on some of the key challenges introduced by the upcoming device transition from three-sided channel FinFETs into nanosheet FETs, i.e., offering a four-sided electrostatic control of the channel. Finally, we present the use of machine learning for automation in carrier calibration with increased accuracy. We close by introducing some of the concepts that we consider promising for further extension of SSRM to obtain sub-nm structural information and doping profiles in the area of advanced FinFETs and nanosheet FET technologies, including (a) correlative analysis flow, (b) liquid-assisted probing, and (c) top–down and bottom–up multi-probe sensing schemes to merge low- and high-pressure SSRM scans.
{"title":"The enduring legacy of scanning spreading resistance microscopy: Overview, advancements, and future directions","authors":"Md Ashiqur Rahman Laskar, Lennaert Wouters, Pieter Lagrain, Jill Serron, Nemanja Peric, Andrea Pondini, Pierre Eyben, Thomas Hantschel, Umberto Celano","doi":"10.1063/5.0280969","DOIUrl":"https://doi.org/10.1063/5.0280969","url":null,"abstract":"Scanning spreading resistance microscopy (SSRM) has recently celebrated 30 years of existence when counting from the original patent of 1994. In this time, the technique has experienced an incredible journey with substantial evolutions that transformed SSRM from a small-scale experiment into a staple for chip manufacturing laboratories for physical analysis of materials, failure analysis, and process development of integrated circuits. As the nanoelectronics industry is ready for a new inflection point, with the introduction of nanosheet field-effect transistor to replace FinFETs and cell track scaling architectures such as the complementary field-effect transistors, SSRM is once again at a turning point. This review aims to highlight the state-of-the-art while discussing the emerging challenges introduced by the ever-increasing complexity in complementary metal–oxide–semiconductor (CMOS) manufacturing. We start by illustrating the unique capability of the SSRM technique, its origin, and its evolution. Next, we continue by showing the considerable research effort that enabled SSRM to transition to a tomographic sensing method in support of FinFET transistors. Here, the high aspect ratio fin geometry and the complex contacts technology have imposed important modifications to the original method. Later, we elaborate on some of the key challenges introduced by the upcoming device transition from three-sided channel FinFETs into nanosheet FETs, i.e., offering a four-sided electrostatic control of the channel. Finally, we present the use of machine learning for automation in carrier calibration with increased accuracy. We close by introducing some of the concepts that we consider promising for further extension of SSRM to obtain sub-nm structural information and doping profiles in the area of advanced FinFETs and nanosheet FET technologies, including (a) correlative analysis flow, (b) liquid-assisted probing, and (c) top–down and bottom–up multi-probe sensing schemes to merge low- and high-pressure SSRM scans.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"39 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145247499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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