Alejandro V. Silhanek, Lu Jiang, Cun Xue, Benoît Vanderheyden
Defects in superconducting systems are ubiquitous and nearly unavoidable. They can vary in nature, geometry, and size, ranging from microscopic-size defects such as dislocations, grain boundaries, twin planes, and oxygen vacancies, to macroscopic-size defects such as segregations, indentations, contamination, cracks, and voids. Irrespective of their type, defects perturb the flow of electric current, forcing it to deviate from its path. In the best-case scenario, the associated perturbation can be damped within a distance of the order of the size of the defect if the rigidity of the superconducting state, characterized by the creep exponent n, is low. In most cases, however, this perturbation spans macroscopic distances covering the entire superconducting sample and thus dramatically influences the response of the system. In this work, we review the current state of theoretical understanding and experimental evidence on the modification of magnetic flux patterns in superconductors by border defects, including the influence of their geometry, temperature, and applied magnetic field. We scrutinize and contrast the picture emerging from a continuous media standpoint, i.e., ignoring the granularity imposed by the vortex quantization, with that provided by a phenomenological approach dictated by the vortex dynamics. In addition, we discuss the influence of border indentations on the nucleation of thermomagnetic instabilities. Assessing the impact of surface and border defects is of utmost importance for all superconducting technologies, including resonators, single-photon detectors, radio frequency cavities and accelerators, cables, metamaterials, diodes, and many others.
{"title":"Impact of border defects on the magnetic flux penetration in superconducting films","authors":"Alejandro V. Silhanek, Lu Jiang, Cun Xue, Benoît Vanderheyden","doi":"10.1063/5.0282694","DOIUrl":"https://doi.org/10.1063/5.0282694","url":null,"abstract":"Defects in superconducting systems are ubiquitous and nearly unavoidable. They can vary in nature, geometry, and size, ranging from microscopic-size defects such as dislocations, grain boundaries, twin planes, and oxygen vacancies, to macroscopic-size defects such as segregations, indentations, contamination, cracks, and voids. Irrespective of their type, defects perturb the flow of electric current, forcing it to deviate from its path. In the best-case scenario, the associated perturbation can be damped within a distance of the order of the size of the defect if the rigidity of the superconducting state, characterized by the creep exponent n, is low. In most cases, however, this perturbation spans macroscopic distances covering the entire superconducting sample and thus dramatically influences the response of the system. In this work, we review the current state of theoretical understanding and experimental evidence on the modification of magnetic flux patterns in superconductors by border defects, including the influence of their geometry, temperature, and applied magnetic field. We scrutinize and contrast the picture emerging from a continuous media standpoint, i.e., ignoring the granularity imposed by the vortex quantization, with that provided by a phenomenological approach dictated by the vortex dynamics. In addition, we discuss the influence of border indentations on the nucleation of thermomagnetic instabilities. Assessing the impact of surface and border defects is of utmost importance for all superconducting technologies, including resonators, single-photon detectors, radio frequency cavities and accelerators, cables, metamaterials, diodes, and many others.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"8 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145728675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The controllable growth of large-sized and high-quality semiconductor single crystals is an important guarantee for the realization of high-performance electronic and optoelectronic devices. Herein, we synthesized layered BiOI transparent single crystals through a tellurium-assisted chemical vapor transport strategy. Systematic investigation reveals that tellurium acts as a critical transport agent, directly modulating the crystallization dynamics and enabling the growth of high-quality 1-cm single crystals with precise size control. The layered BiOI crystals demonstrate excellent broadband (254–940 nm) photoresponse performance, achieving a remarkable responsivity of 123.7 A·W−1 and specific detectivity of 7.2 × 1013 Jones. Notably, the implementation of gate voltage regulation allows dynamic control of carrier transport mechanisms, achieving efficient regulation of the photoresponse of the device. This unique gate-tunable characteristic enables dual-mode operation in image recognition systems, simultaneously supporting both high-sensitivity detection and programmable contrast enhancement. The combination of scalable crystal growth and multifunctional optoelectronic properties positions BiOI as a promising candidate for next-generation intelligent photodetection technologies.
{"title":"Gate-tunable dual-mode BiOI photodetector for precise object identification","authors":"Shuo Liu, Xinyun Zhou, Wanglong Wu, Junda Yang, Ruiying Ma, Le Yuan, Lingjie Zhao, Mianzeng Zhong","doi":"10.1063/5.0289445","DOIUrl":"https://doi.org/10.1063/5.0289445","url":null,"abstract":"The controllable growth of large-sized and high-quality semiconductor single crystals is an important guarantee for the realization of high-performance electronic and optoelectronic devices. Herein, we synthesized layered BiOI transparent single crystals through a tellurium-assisted chemical vapor transport strategy. Systematic investigation reveals that tellurium acts as a critical transport agent, directly modulating the crystallization dynamics and enabling the growth of high-quality 1-cm single crystals with precise size control. The layered BiOI crystals demonstrate excellent broadband (254–940 nm) photoresponse performance, achieving a remarkable responsivity of 123.7 A·W−1 and specific detectivity of 7.2 × 1013 Jones. Notably, the implementation of gate voltage regulation allows dynamic control of carrier transport mechanisms, achieving efficient regulation of the photoresponse of the device. This unique gate-tunable characteristic enables dual-mode operation in image recognition systems, simultaneously supporting both high-sensitivity detection and programmable contrast enhancement. The combination of scalable crystal growth and multifunctional optoelectronic properties positions BiOI as a promising candidate for next-generation intelligent photodetection technologies.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"30 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145664781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hamta Majd, Farooq I. Azam, Rhea Gazelidis, Anthony Harker, Angelo Delbusso, Mohan Edirisinghe
This study introduces the design and development of a core-sheath pressurized spinning method for producing hollow fibers on a larger scale than conventional methods. Multiple experimental designs were analyzed to determine the optimal hollow fiber structure. Polycaprolactone was used for the sheath layer, with four different core materials (empty, gas, ethanol, and oil) tested at rotational speeds of 2000, 4000, 6000, and 8000 rpm. Pressures of 0, 0.1, 0.2, and 0.3 MPa were applied bilaterally and unilaterally to the vessel's core and sheath. A high-speed camera was used to observe the jetting behavior of the polymer solutions. Optimal operating parameters for each approach were found to be: empty core (sheath: 0–0.3—core: 0 MPa, at a rotational speed of 6000–8000 rpm), gas core (sheath: 0—core: 0.1–0.3 MPa, at a rotational speed of 4000–8000 rpm), ethanol core (sheath and core: 0–0.2 MPa, at a rotational speed of 4000–8000 rpm), and oil core (sheath and core: 0–0.1 MPa, at a rotational speed of 4000–6000 rpm). Surface morphology and size distribution were analyzed via scanning electron microscopy and a computed tomography scan, which confirmed the hollow structure. This design development offers a mean production of more than 30 times higher than coaxial electrospinning, achieving rates of 74.4, 62.4, 52.8, and 33.6 g h−1 for empty, gas, ethanol, and oil cores, respectively. The results show that this new design of core-sheath pressurized spinning can be successfully applied to large-scale production of hollow fibers, opening the path for new biomedical applications.
{"title":"Making hollow fibers using pressurized spinning","authors":"Hamta Majd, Farooq I. Azam, Rhea Gazelidis, Anthony Harker, Angelo Delbusso, Mohan Edirisinghe","doi":"10.1063/5.0244921","DOIUrl":"https://doi.org/10.1063/5.0244921","url":null,"abstract":"This study introduces the design and development of a core-sheath pressurized spinning method for producing hollow fibers on a larger scale than conventional methods. Multiple experimental designs were analyzed to determine the optimal hollow fiber structure. Polycaprolactone was used for the sheath layer, with four different core materials (empty, gas, ethanol, and oil) tested at rotational speeds of 2000, 4000, 6000, and 8000 rpm. Pressures of 0, 0.1, 0.2, and 0.3 MPa were applied bilaterally and unilaterally to the vessel's core and sheath. A high-speed camera was used to observe the jetting behavior of the polymer solutions. Optimal operating parameters for each approach were found to be: empty core (sheath: 0–0.3—core: 0 MPa, at a rotational speed of 6000–8000 rpm), gas core (sheath: 0—core: 0.1–0.3 MPa, at a rotational speed of 4000–8000 rpm), ethanol core (sheath and core: 0–0.2 MPa, at a rotational speed of 4000–8000 rpm), and oil core (sheath and core: 0–0.1 MPa, at a rotational speed of 4000–6000 rpm). Surface morphology and size distribution were analyzed via scanning electron microscopy and a computed tomography scan, which confirmed the hollow structure. This design development offers a mean production of more than 30 times higher than coaxial electrospinning, achieving rates of 74.4, 62.4, 52.8, and 33.6 g h−1 for empty, gas, ethanol, and oil cores, respectively. The results show that this new design of core-sheath pressurized spinning can be successfully applied to large-scale production of hollow fibers, opening the path for new biomedical applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"1 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145664637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lei Chen, Ting Lu, Xiao-Lei Shi, Wei-Di Liu, Meng Li, Siqi Huo, Pingan Song, John Bell, Zhi-Gang Chen, Min Hong
Radioisotope thermoelectric generators (RTGs) are essential for space exploration, providing reliable, long-term power in environments where solar energy is impractical. This review examines the evolution of RTGs, from the early Systems for Nuclear Auxiliary Power (SNAP) program (1961) to the latest Multi-Mission RTG (MMRTG) and the enhanced MMRTG (eMMRTG) systems. Additionally, it also explores segmentation techniques aimed at optimizing thermoelectric (TE) performance in next-generation RTGs and discusses the potential of miniature RTGs for terrestrial applications. A key focus of this review is the selection of isotopic fuel and advancements in TE materials and devices. Plutonium-238 (Pu-238) remains the primary isotope used in RTGs due to its high power density and long half-life. The development of TE materials has progressed from well-established compounds such as PbTe, (AgSbTe2)0.15(GeTe)0.85 (TAGS), and SiGe—used in existing RTGs—to emerging materials including skutterudites (SKD), Mg3Sb2-Mg3Bi2 alloys, and half-Heusler (HH) compounds. This review also highlights strategies for enhancing thermoelectric performance and improving device fabrication. Despite their proven reliability, RTGs continue to face the challenge of low energy conversion efficiency. This limitation has driven ongoing research into advanced TE materials and technologies, with the goal of improving performance for both space and terrestrial applications.
{"title":"Radioisotope thermoelectric generators: Evolution, materials, and future prospects","authors":"Lei Chen, Ting Lu, Xiao-Lei Shi, Wei-Di Liu, Meng Li, Siqi Huo, Pingan Song, John Bell, Zhi-Gang Chen, Min Hong","doi":"10.1063/5.0267852","DOIUrl":"https://doi.org/10.1063/5.0267852","url":null,"abstract":"Radioisotope thermoelectric generators (RTGs) are essential for space exploration, providing reliable, long-term power in environments where solar energy is impractical. This review examines the evolution of RTGs, from the early Systems for Nuclear Auxiliary Power (SNAP) program (1961) to the latest Multi-Mission RTG (MMRTG) and the enhanced MMRTG (eMMRTG) systems. Additionally, it also explores segmentation techniques aimed at optimizing thermoelectric (TE) performance in next-generation RTGs and discusses the potential of miniature RTGs for terrestrial applications. A key focus of this review is the selection of isotopic fuel and advancements in TE materials and devices. Plutonium-238 (Pu-238) remains the primary isotope used in RTGs due to its high power density and long half-life. The development of TE materials has progressed from well-established compounds such as PbTe, (AgSbTe2)0.15(GeTe)0.85 (TAGS), and SiGe—used in existing RTGs—to emerging materials including skutterudites (SKD), Mg3Sb2-Mg3Bi2 alloys, and half-Heusler (HH) compounds. This review also highlights strategies for enhancing thermoelectric performance and improving device fabrication. Despite their proven reliability, RTGs continue to face the challenge of low energy conversion efficiency. This limitation has driven ongoing research into advanced TE materials and technologies, with the goal of improving performance for both space and terrestrial applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"10 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145664763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Do Wan Kim, Seokho Kim, Jinho Choi, Jaehyun Lee, Yongmin Baek, Kyusang Lee, Dong Hyuk Park, Jongchan Kim
As the demand for high bandwidth and long-distance data transmission escalates in modern computing, optical interconnects via waveguides have attracted significant attention. While conventional inorganic materials-based waveguide necessitates complex components such as grating couplers and optical amplifiers, organic semiconductor-based waveguides offer simplified systems with unique functionalities stemming from their inherent radiative properties that facilitate efficient light–matter interactions, such as exciton–polariton formation and Förster resonance energy transfer. These interactions enable active light modulation, encompassing intensity control, wavelength shift, exciton–polariton lasing, and nonlinear optical effects. Moreover, their optical properties and structural geometries can be precisely tuned through molecular design and controlled synthesis techniques. As a result, organic waveguides have been explored for a range of applications including optical-logic operations, bio-chemical sensing, and advanced photonic integration systems. In this review, we delineate the fundamental principles of organic semiconductor waveguides, as well as their fabrication and potential impact on various photonic applications.
{"title":"Organic active waveguides","authors":"Do Wan Kim, Seokho Kim, Jinho Choi, Jaehyun Lee, Yongmin Baek, Kyusang Lee, Dong Hyuk Park, Jongchan Kim","doi":"10.1063/5.0276463","DOIUrl":"https://doi.org/10.1063/5.0276463","url":null,"abstract":"As the demand for high bandwidth and long-distance data transmission escalates in modern computing, optical interconnects via waveguides have attracted significant attention. While conventional inorganic materials-based waveguide necessitates complex components such as grating couplers and optical amplifiers, organic semiconductor-based waveguides offer simplified systems with unique functionalities stemming from their inherent radiative properties that facilitate efficient light–matter interactions, such as exciton–polariton formation and Förster resonance energy transfer. These interactions enable active light modulation, encompassing intensity control, wavelength shift, exciton–polariton lasing, and nonlinear optical effects. Moreover, their optical properties and structural geometries can be precisely tuned through molecular design and controlled synthesis techniques. As a result, organic waveguides have been explored for a range of applications including optical-logic operations, bio-chemical sensing, and advanced photonic integration systems. In this review, we delineate the fundamental principles of organic semiconductor waveguides, as well as their fabrication and potential impact on various photonic applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"6 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145593413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Stimulating cortical neurons through multisensory inputs or deep brain neurons via invasive electrodes has been found to alleviate the pathology and behavioral symptoms of Alzheimer's disease (AD). The activation of neuronal firing helps to initiate the neuronal repair process and improve memory and synaptic growth. In this study, we report an optical noninvasive method, termed individual-neuron optical brain stimulation (iOBS), to stimulate individual neurons in the cortex using a tightly focused femtosecond laser that transiently scans in a microdomain of each targeted neuron for a flash by two-photon excitation of the intrinsic flavin there. The stimulation activates intense Ca2+ activities of neurons at layer 5/6 in the brain cortex. We demonstrate that iOBS works effectively in the AD mouse model. By performing iOBS in ∼60 randomly selected individual neurons in the visual cortex for a single time, the behavioral symptoms of AD mice are significantly alleviated via the initiation of the neuronal repair process. This method provides a direct and noninvasive method of brain stimulation with promising potential for AD treatment.
{"title":"Individual-neuron optical brain stimulation (iOBS) alleviates behaviors in an Alzheimer's disease mouse model","authors":"Fei Chen, Haipeng Wang, Hao He","doi":"10.1063/5.0297319","DOIUrl":"https://doi.org/10.1063/5.0297319","url":null,"abstract":"Stimulating cortical neurons through multisensory inputs or deep brain neurons via invasive electrodes has been found to alleviate the pathology and behavioral symptoms of Alzheimer's disease (AD). The activation of neuronal firing helps to initiate the neuronal repair process and improve memory and synaptic growth. In this study, we report an optical noninvasive method, termed individual-neuron optical brain stimulation (iOBS), to stimulate individual neurons in the cortex using a tightly focused femtosecond laser that transiently scans in a microdomain of each targeted neuron for a flash by two-photon excitation of the intrinsic flavin there. The stimulation activates intense Ca2+ activities of neurons at layer 5/6 in the brain cortex. We demonstrate that iOBS works effectively in the AD mouse model. By performing iOBS in ∼60 randomly selected individual neurons in the visual cortex for a single time, the behavioral symptoms of AD mice are significantly alleviated via the initiation of the neuronal repair process. This method provides a direct and noninvasive method of brain stimulation with promising potential for AD treatment.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"112 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145582938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. M. Beltukov, A. V. Rodina, A. Alekseev, Al. L. Efros
Discontinuity of dielectric constants at the interface is a common feature of all nanostructures and semiconductor heterostructures. Near such interfaces, a charged particle creates a singular self-interaction potential which may be attributed to interaction with fictitious mirror charges. The singularity of this interaction at the interface presents an obstruction to a perturbative approach. In several limiting cases, this problem can be avoided by zeroing out the carrier wave function at the interface. In this paper, we have developed a non-perturbative theory, which gives a self-consistent description of carrier propagation through an interface with a dielectric discontinuity. It is based on conservation of the current density propagating through the interface, and it is formulated in terms of general boundary conditions (GBCs) for the wave function at the interface with a single phenomenological parameter W. For these GBCs, we find exact solutions of the Schrödinger equation near the interface and the carrier energy spectrum including resonances. Using these results, we describe the photo effect at the semiconductor/vacuum interface and the energy spectrum of quantum wells at the interface with the vacuum or a high-k dielectric. For a surface of liquid helium, we estimate the parameter W and match the resulting electron spectrum with the existing experimental data and theoretical analysis.
{"title":"Non-perturbative macroscopic theory of interfaces with discontinuous dielectric constant","authors":"Y. M. Beltukov, A. V. Rodina, A. Alekseev, Al. L. Efros","doi":"10.1063/5.0282177","DOIUrl":"https://doi.org/10.1063/5.0282177","url":null,"abstract":"Discontinuity of dielectric constants at the interface is a common feature of all nanostructures and semiconductor heterostructures. Near such interfaces, a charged particle creates a singular self-interaction potential which may be attributed to interaction with fictitious mirror charges. The singularity of this interaction at the interface presents an obstruction to a perturbative approach. In several limiting cases, this problem can be avoided by zeroing out the carrier wave function at the interface. In this paper, we have developed a non-perturbative theory, which gives a self-consistent description of carrier propagation through an interface with a dielectric discontinuity. It is based on conservation of the current density propagating through the interface, and it is formulated in terms of general boundary conditions (GBCs) for the wave function at the interface with a single phenomenological parameter W. For these GBCs, we find exact solutions of the Schrödinger equation near the interface and the carrier energy spectrum including resonances. Using these results, we describe the photo effect at the semiconductor/vacuum interface and the energy spectrum of quantum wells at the interface with the vacuum or a high-k dielectric. For a surface of liquid helium, we estimate the parameter W and match the resulting electron spectrum with the existing experimental data and theoretical analysis.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"9 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145582892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Linglong Zhang, Jian Kang, Xueqian Sun, Shunshun Yang, Yichun Cui, Han Yan, Rui Fang, Jiajie Pei, Jiong Yang, Haizeng Song, Ming Tian, Neng Wan, Hucheng Song, Fei Zhou, Youwen Liu, Yi Shi, Yuerui Lu
Förster resonance energy transfer (FRET) delivers energy from a donor to an acceptor through near-field dipole–dipole couplings. Engineering FRET is crucial for the development of high-performance polaritonic light sources, innovative optoelectronic logic computing circuits, and the exploration of exciton dynamics. However, direct manipulation of FRET in organic–inorganic heterostructures remains challenging due to factors such as bulk size, excessive disorders, uncontrollable packing modes of organic counterparts, and ultrafast charge transfers. Here, we modify FRET in heterostructures comprising WS2 (acceptor) and highly crystalline wetting-layer pentacene (WL PEN: donor). This non-conductive WL PEN effectively suppresses interlayer charge transfers. By utilizing an electrostatic gate, the maximum FRET enhancement factor (η) reaches ∼56.2, corresponding to a record exciton diffusion coefficient of ∼223.3 cm2/s. They are ascribed to enhanced excitonic absorption of WS2. Additionally, temperature significantly influences FRET, primarily due to changes in exciton population of pentacene at high momenta. Furthermore, we demonstrate a simple multimode optoelectronic logic gate (OELG) on this heterostructure by modulating FRET. Our findings facilitate the understanding of enhanced light–matter interactions and open a new avenue to design out-performing and multifunctional optoelectronic devices and new optoelectronic computing circuits.
{"title":"Highly tunable Förster resonance energy transfer across atomically thin organic–inorganic interfaces","authors":"Linglong Zhang, Jian Kang, Xueqian Sun, Shunshun Yang, Yichun Cui, Han Yan, Rui Fang, Jiajie Pei, Jiong Yang, Haizeng Song, Ming Tian, Neng Wan, Hucheng Song, Fei Zhou, Youwen Liu, Yi Shi, Yuerui Lu","doi":"10.1063/5.0268381","DOIUrl":"https://doi.org/10.1063/5.0268381","url":null,"abstract":"Förster resonance energy transfer (FRET) delivers energy from a donor to an acceptor through near-field dipole–dipole couplings. Engineering FRET is crucial for the development of high-performance polaritonic light sources, innovative optoelectronic logic computing circuits, and the exploration of exciton dynamics. However, direct manipulation of FRET in organic–inorganic heterostructures remains challenging due to factors such as bulk size, excessive disorders, uncontrollable packing modes of organic counterparts, and ultrafast charge transfers. Here, we modify FRET in heterostructures comprising WS2 (acceptor) and highly crystalline wetting-layer pentacene (WL PEN: donor). This non-conductive WL PEN effectively suppresses interlayer charge transfers. By utilizing an electrostatic gate, the maximum FRET enhancement factor (η) reaches ∼56.2, corresponding to a record exciton diffusion coefficient of ∼223.3 cm2/s. They are ascribed to enhanced excitonic absorption of WS2. Additionally, temperature significantly influences FRET, primarily due to changes in exciton population of pentacene at high momenta. Furthermore, we demonstrate a simple multimode optoelectronic logic gate (OELG) on this heterostructure by modulating FRET. Our findings facilitate the understanding of enhanced light–matter interactions and open a new avenue to design out-performing and multifunctional optoelectronic devices and new optoelectronic computing circuits.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"34 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145582891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study establishes an explicit photoresponse theory for polycrystalline nanowire photoconductors, addressing the gap in understanding gain mechanisms in scalable polycrystalline systems. Traditional photoconductive gain models assume uniform carrier distribution and equal electron–hole contributions, which fail to account for grain boundary effects in polycrystalline materials. The proposed theory introduces the photogating effect as the origin of high gain, where light-induced photovoltage modulates conduction barriers at grain boundaries. Experimental validation utilized silicon nanowires with multiple transparent ITO gates to mimic grain boundary potential barriers. Photoresponse measurements under varying gate voltages and light intensities (532 nm LED) demonstrated excellent agreement with derived analytical equations, enabling the extraction of critical parameters such as minority carrier recombination lifetime (τ0) and critical light intensity. Silvaco TCAD simulations further corroborated the theory, showing barrier height and number-dependent photocurrent trends consistent with experiments. Additionally, polycrystalline ZnO thin-film devices and literature data from other polycrystalline systems were successfully fitted to the model, confirming its universality. This work provides a unified framework for optimizing responsivity and bandwidth in low-dimensional photodetectors, bridging theoretical insights with practical applications in next-generation optoelectronics.
{"title":"Explicit photogain principle for polycrystalline nanowire photoconductors","authors":"Shuwen Guo, Huan Liu, Wenyu Zhang, Kai Li, Abdelmadjid Melsi, Huayou Liu, Yinchu Shen, Yumeng Liu, Jiajun Shen, Xiaokun Gu, Wei Yu, Xiaochuan Guo, Wenbo Peng, Yongning He, Yaping Dan","doi":"10.1063/5.0282633","DOIUrl":"https://doi.org/10.1063/5.0282633","url":null,"abstract":"This study establishes an explicit photoresponse theory for polycrystalline nanowire photoconductors, addressing the gap in understanding gain mechanisms in scalable polycrystalline systems. Traditional photoconductive gain models assume uniform carrier distribution and equal electron–hole contributions, which fail to account for grain boundary effects in polycrystalline materials. The proposed theory introduces the photogating effect as the origin of high gain, where light-induced photovoltage modulates conduction barriers at grain boundaries. Experimental validation utilized silicon nanowires with multiple transparent ITO gates to mimic grain boundary potential barriers. Photoresponse measurements under varying gate voltages and light intensities (532 nm LED) demonstrated excellent agreement with derived analytical equations, enabling the extraction of critical parameters such as minority carrier recombination lifetime (τ0) and critical light intensity. Silvaco TCAD simulations further corroborated the theory, showing barrier height and number-dependent photocurrent trends consistent with experiments. Additionally, polycrystalline ZnO thin-film devices and literature data from other polycrystalline systems were successfully fitted to the model, confirming its universality. This work provides a unified framework for optimizing responsivity and bandwidth in low-dimensional photodetectors, bridging theoretical insights with practical applications in next-generation optoelectronics.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"30 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145560527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kubra Sattar, Rabia Tahir, Muhammad Yousaf, Thorsten M. Gesing, M. Mangir Murshed, Syed Rizwan
As an exemplary member of the MXene family belonging to the class of two-dimensional materials, titanium carbide (Ti3C2Tx) MXene stands bright and is explored owing to its exceptional tunable properties. The full ambient oxidation of MXene in a spectrum of varying elevated temperatures toward the application of memristor devices is reported for the first time in this work. A Ti3C2Tx MXene free-standing film is oxidized in air from the temperature of 100 to 700 °C upon which the MXene completely transforms into the TiO2 film yet retaining its free-standing nature in the form of MXene-derived TiO2 films. Extensive surface, morphological, and bulk characterizations, such as x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray diffraction, confirmed the increasing Ti–O and decreasing Ti–C bond strength amid increasing oxidation. Furthermore, exceptional resistance switching properties are unveiled employing these heated MXene devices in tri-layer memristors utilizing flexible reduced graphene oxide as electrodes. The memristor device utilizing Ti3C2Tx MXene heated at 700 °C exhibited outstanding performance compared to the other series of devices with low switching voltage, a high OFF/ON ratio of >102, cycle-to-cycle repeatability, and exceptional endurance of over 6000 cycles. This work on MXene-derived TiO2 free-standing films will lay open ways to obtain oxide based flexible electronic devices through easy fabrication methods along with the possible capability to mimic unmatched synaptic features.
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