Technologies for manipulating single atoms have advanced drastically in the past decades. Due to their excellent controllability of internal states, atoms serve as one of the ideal platforms for quantum systems. One major research direction in atomic systems is the precise determination of physical quantities using atoms, which is included in the field of precision measurements. One of such precisely measured physical quantities is the energy differences between two energy levels in atoms, which is symbolized by the remarkable fractional uncertainty of 10−18 or lower achieved in the state-of-the-art atomic clocks. Two-level systems in atoms are sensitive to various external fields and can, therefore, function as quantum sensors. The effect of these fields manifests as energy shifts in the two-level system. Traditionally, such shifts are induced by electric or magnetic fields, as recognized even before the advent of precision spectroscopy with lasers. With high-precision measurements, tiny energy shifts caused by hypothetical fields weakly coupled to ordinary matter or by small effects mediated by massive particles can be potentially detectable, which are conventionally dealt with in the field of nuclear and particle physics. In most cases, the atomic systems as quantum sensors have not been sensitive enough to detect such effects. Instead, experiments searching for these interactions have placed constraints on coupling constants, except in a few cases where the effects are predicted by the Standard Model of particle physics. Nonetheless, measurements and searches for these effects in atomic systems have led to the emergence of a new field of physics. In some cases, they open new parameter spaces to explore in conventionally investigated topics, e.g., dark matter, fifth force, and other physics beyond the Standard Model. In other cases, these measurements provide alternative experimental approaches to established topics, e.g., variations of fundamental constants searched for astronomically and nuclear structure studied in high-energy scattering experiments. The use of atomic clocks as quantum sensors for phenomena originating from nuclear and particle physics evolved significantly in the past decades. This paper highlights the recent developments in the field.
{"title":"Quantum sensing using atomic clocks for nuclear and particle physics","authors":"Akio Kawasaki","doi":"10.1063/5.0273813","DOIUrl":"https://doi.org/10.1063/5.0273813","url":null,"abstract":"Technologies for manipulating single atoms have advanced drastically in the past decades. Due to their excellent controllability of internal states, atoms serve as one of the ideal platforms for quantum systems. One major research direction in atomic systems is the precise determination of physical quantities using atoms, which is included in the field of precision measurements. One of such precisely measured physical quantities is the energy differences between two energy levels in atoms, which is symbolized by the remarkable fractional uncertainty of 10−18 or lower achieved in the state-of-the-art atomic clocks. Two-level systems in atoms are sensitive to various external fields and can, therefore, function as quantum sensors. The effect of these fields manifests as energy shifts in the two-level system. Traditionally, such shifts are induced by electric or magnetic fields, as recognized even before the advent of precision spectroscopy with lasers. With high-precision measurements, tiny energy shifts caused by hypothetical fields weakly coupled to ordinary matter or by small effects mediated by massive particles can be potentially detectable, which are conventionally dealt with in the field of nuclear and particle physics. In most cases, the atomic systems as quantum sensors have not been sensitive enough to detect such effects. Instead, experiments searching for these interactions have placed constraints on coupling constants, except in a few cases where the effects are predicted by the Standard Model of particle physics. Nonetheless, measurements and searches for these effects in atomic systems have led to the emergence of a new field of physics. In some cases, they open new parameter spaces to explore in conventionally investigated topics, e.g., dark matter, fifth force, and other physics beyond the Standard Model. In other cases, these measurements provide alternative experimental approaches to established topics, e.g., variations of fundamental constants searched for astronomically and nuclear structure studied in high-energy scattering experiments. The use of atomic clocks as quantum sensors for phenomena originating from nuclear and particle physics evolved significantly in the past decades. This paper highlights the recent developments in the field.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"6 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145894019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Crystalline silicon (c-Si) photovoltaics dominate the solar industry, yet further advancements hinge on passivating and carrier-selective contacts to overcome efficiency limitations. This review explores the pivotal role of atomic layer deposition (ALD) in enabling metal oxide films for high-performance c-Si solar cells, bridging material innovation with industrial scalability. Historically, ALD-grown Al2O3 enabled the effective passivation of p-type Si surfaces via its high negative fixed charge, which made localized rear contacts viable and facilitated the transition from aluminum back surface field to passivated emitter rear contact architectures, ultimately lowering J0 and boosting efficiency. However, emerging carrier-selective contacts demand materials that simultaneously minimize recombination and resistive losses while avoiding parasitic absorption. Metal oxides, leveraging tunable optoelectronic properties and ALD's atomic-scale precision, offer a promising alternative to conventional silicon-based films (e.g., a-Si:H and poly-Si). We analyzed 373 studies to map trends in ALD metal oxide applications, highlighting the dominance of Al2O3 and TiO2, alongside growing interest in multi-metal oxides. The review underscores ALD's unique ability to tailor chemical and field-effect passivation mechanisms while addressing challenges in stoichiometric control and interfacial engineering. Targeting both ALD specialists and PV engineers, we propose standardized metrics for evaluating passivating contacts, aiming to accelerate cross-disciplinary innovation. Finally, we outline future opportunities for ALD-derived metal oxide in next-generation photovoltaics, including tandem and thin-film technologies, advocating for systematic research to unlock their full potential.
{"title":"Atomic layer deposition (ALD) of passivating, carrier-selective oxides for silicon photovoltaics","authors":"Chien-Hsuan Chen, Gouri Syamala Rao Mullapudi, Kristopher O. Davis, Parag Banerjee","doi":"10.1063/5.0275420","DOIUrl":"https://doi.org/10.1063/5.0275420","url":null,"abstract":"Crystalline silicon (c-Si) photovoltaics dominate the solar industry, yet further advancements hinge on passivating and carrier-selective contacts to overcome efficiency limitations. This review explores the pivotal role of atomic layer deposition (ALD) in enabling metal oxide films for high-performance c-Si solar cells, bridging material innovation with industrial scalability. Historically, ALD-grown Al2O3 enabled the effective passivation of p-type Si surfaces via its high negative fixed charge, which made localized rear contacts viable and facilitated the transition from aluminum back surface field to passivated emitter rear contact architectures, ultimately lowering J0 and boosting efficiency. However, emerging carrier-selective contacts demand materials that simultaneously minimize recombination and resistive losses while avoiding parasitic absorption. Metal oxides, leveraging tunable optoelectronic properties and ALD's atomic-scale precision, offer a promising alternative to conventional silicon-based films (e.g., a-Si:H and poly-Si). We analyzed 373 studies to map trends in ALD metal oxide applications, highlighting the dominance of Al2O3 and TiO2, alongside growing interest in multi-metal oxides. The review underscores ALD's unique ability to tailor chemical and field-effect passivation mechanisms while addressing challenges in stoichiometric control and interfacial engineering. Targeting both ALD specialists and PV engineers, we propose standardized metrics for evaluating passivating contacts, aiming to accelerate cross-disciplinary innovation. Finally, we outline future opportunities for ALD-derived metal oxide in next-generation photovoltaics, including tandem and thin-film technologies, advocating for systematic research to unlock their full potential.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"13 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145894043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuyang Zhang, Kang'an Jiang, Anhua Dong, Ke Chang, Xian-Min Jin, Hui Wang
While classical memristors demonstrate reliable binary switching, multi-level states remain constrained by scalability and mechanism variability. Quantum conductance memristors, with discrete quantized conductance steps, offer a promising alternative. However, achieving stable quantized states requires precise atomic-scale filament control and quantum state stability, posing even greater challenges. Here, we address these challenges by constructing a multilayer MoS2/MoS2:Ag structure that stably yields previously elusive conductance steps. Combined with a non-reset voltage scanning method and supported by a scattering center model, our approach markedly improves reproducibility. Moreover, we observe light-induced half-integer conductance states in a non-magnetic system. Such phenomena, previously reported only in oxygen-vacancy-based devices, are here realized for the first time in a cation-migration-based quantum conductance memristor. This arises from the strong photoresponse of MoS2 and the offset between the Ag work function and the MoS2 conduction band minimum, which together enable spin-selective transport. This finding surpasses classical multi-level limits and opens new paths for optoelectronic quantum conductance control.
{"title":"Stable multi-level quantum conductance in an optically tunable ITO/MoS2-Ag/Pt memristor","authors":"Yuyang Zhang, Kang'an Jiang, Anhua Dong, Ke Chang, Xian-Min Jin, Hui Wang","doi":"10.1063/5.0296500","DOIUrl":"https://doi.org/10.1063/5.0296500","url":null,"abstract":"While classical memristors demonstrate reliable binary switching, multi-level states remain constrained by scalability and mechanism variability. Quantum conductance memristors, with discrete quantized conductance steps, offer a promising alternative. However, achieving stable quantized states requires precise atomic-scale filament control and quantum state stability, posing even greater challenges. Here, we address these challenges by constructing a multilayer MoS2/MoS2:Ag structure that stably yields previously elusive conductance steps. Combined with a non-reset voltage scanning method and supported by a scattering center model, our approach markedly improves reproducibility. Moreover, we observe light-induced half-integer conductance states in a non-magnetic system. Such phenomena, previously reported only in oxygen-vacancy-based devices, are here realized for the first time in a cation-migration-based quantum conductance memristor. This arises from the strong photoresponse of MoS2 and the offset between the Ag work function and the MoS2 conduction band minimum, which together enable spin-selective transport. This finding surpasses classical multi-level limits and opens new paths for optoelectronic quantum conductance control.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"45 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145813322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Long Zhang, Ziqi Ren, Li Sun, Yihua Gao, Deli Wang, Junjie He, Guoying Gao
The depletion of energy sources, worsening environmental issues, and the quantum limitations of integrated circuits for information storage in the post-Moore era are pressing global concerns. Fortunately, two-dimensional (2D) Janus materials, possessing broken spatial symmetry, with emerging non-linear optical response, piezoelectricity, valley polarization, Rashba spin splitting, and more, have established a substantial platform for exploring and applying modifiable physical, chemical, and biological properties in materials science and offered a promising solution for these energy and information issues. To provide researchers with a comprehensive repository of the 2D Janus family, this review systematically summarizes their theoretical predictions, experimental preparations, and modulation strategies. It also reviews the recent advances in tunable properties, applications, and inherent mechanisms in optics, catalysis, piezoelectricity, electrochemistry, thermoelectricity, magnetism, and electronics, with a focus on experimentally realized hexagonal and trigonal Janus structures. Additionally, their current research state is summarized, and potential opportunities and challenges that may arise are highlighted. Overall, this review aims to serve as a valuable resource for designing, fabricating, regulating, and applying 2D Janus systems, both theoretically and experimentally. This review will strongly promote the advanced academic investigations and industrial applications of 2D Janus materials in energy and information fields.
{"title":"When energy and information revolutions meet 2D Janus","authors":"Long Zhang, Ziqi Ren, Li Sun, Yihua Gao, Deli Wang, Junjie He, Guoying Gao","doi":"10.1063/5.0306801","DOIUrl":"https://doi.org/10.1063/5.0306801","url":null,"abstract":"The depletion of energy sources, worsening environmental issues, and the quantum limitations of integrated circuits for information storage in the post-Moore era are pressing global concerns. Fortunately, two-dimensional (2D) Janus materials, possessing broken spatial symmetry, with emerging non-linear optical response, piezoelectricity, valley polarization, Rashba spin splitting, and more, have established a substantial platform for exploring and applying modifiable physical, chemical, and biological properties in materials science and offered a promising solution for these energy and information issues. To provide researchers with a comprehensive repository of the 2D Janus family, this review systematically summarizes their theoretical predictions, experimental preparations, and modulation strategies. It also reviews the recent advances in tunable properties, applications, and inherent mechanisms in optics, catalysis, piezoelectricity, electrochemistry, thermoelectricity, magnetism, and electronics, with a focus on experimentally realized hexagonal and trigonal Janus structures. Additionally, their current research state is summarized, and potential opportunities and challenges that may arise are highlighted. Overall, this review aims to serve as a valuable resource for designing, fabricating, regulating, and applying 2D Janus systems, both theoretically and experimentally. This review will strongly promote the advanced academic investigations and industrial applications of 2D Janus materials in energy and information fields.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"22 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145807616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
CuInP2S6 (CIPS) exhibits significant potential for applications in high-integration ferroelectric devices, due to its van der Waals layered structure, which features dangling-bond-free surfaces and maintains room-temperature ferroelectricity down to nanometer-scale thicknesses. A key limitation to its practical application is its moderate polarization strength. This study reports the polarization evolution of CIPS across a wide range of temperatures and pressures and elucidates the mechanisms underlying polarization enhancement under various conditions. The polarization enhancement observed under high-pressure-high-temperature conditions is attributed to the increased occupancy of Cu ions at out-of-plane (CuO) sites, which correspond to high-polarization configurations. In contrast, the high-pressure-low-temperature polarization improvement stems from enhanced ordering of Cu ions. Furthermore, a phase diagram of CIPS over a wide range of temperatures and pressures was established based on Raman spectroscopy and ferroelectric polarization measurements. This diagram further illustrates dipole ordering and Cu-ion freezing in the low-temperature Cc phase. This work provides valuable insights into the thermodynamic and kinetic manipulation of ferroelectric polarization via stress engineering, offering both foundational principles and a deeper understanding of two-dimensional van der Waals ferroelectrics and their potential applications.
{"title":"Phase diagram of CuInP2S6 across wide temperature and pressure ranges","authors":"Yifan Li, Yongfa Luo, Xiaodong Yao, Yinxin Bai, Junling Wang, Jinlong Zhu","doi":"10.1063/5.0299899","DOIUrl":"https://doi.org/10.1063/5.0299899","url":null,"abstract":"CuInP2S6 (CIPS) exhibits significant potential for applications in high-integration ferroelectric devices, due to its van der Waals layered structure, which features dangling-bond-free surfaces and maintains room-temperature ferroelectricity down to nanometer-scale thicknesses. A key limitation to its practical application is its moderate polarization strength. This study reports the polarization evolution of CIPS across a wide range of temperatures and pressures and elucidates the mechanisms underlying polarization enhancement under various conditions. The polarization enhancement observed under high-pressure-high-temperature conditions is attributed to the increased occupancy of Cu ions at out-of-plane (CuO) sites, which correspond to high-polarization configurations. In contrast, the high-pressure-low-temperature polarization improvement stems from enhanced ordering of Cu ions. Furthermore, a phase diagram of CIPS over a wide range of temperatures and pressures was established based on Raman spectroscopy and ferroelectric polarization measurements. This diagram further illustrates dipole ordering and Cu-ion freezing in the low-temperature Cc phase. This work provides valuable insights into the thermodynamic and kinetic manipulation of ferroelectric polarization via stress engineering, offering both foundational principles and a deeper understanding of two-dimensional van der Waals ferroelectrics and their potential applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"73 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145807617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tuğbey Kocabaş, Murat Keçeli, Tanju Gürel, Milorad V. Milošević, Cem Sevik
Group-VI transition metal dichalcogenides (TMDs), MoS2 and MoSe2, have emerged as prototypical low-dimensional systems with distinctive phononic and electronic properties, making them attractive for applications in nanoelectronics, optoelectronics, and thermoelectrics. However, their reported lattice thermal conductivities (κ) remain highly inconsistent, with experimental values and theoretical predictions differing by more than an order of magnitude. These discrepancies stem from uncertainties in measurement techniques, variations in computational protocols, and ambiguities in the treatment of higher-order anharmonic processes. In this study, we critically review these inconsistencies, first by mapping the spread of experimental and modeling results, and then by identifying the methodological origins of divergence. To this end, we bridge first-principles calculations, molecular dynamics simulations, and state-of-the-art machine learning force fields (MLFFs), including recently developed foundation models. We train and benchmark GAP, MACE, NEP, and HIPHIVE against density functional theory and rigorously evaluate the impact of third- and fourth-order phonon scattering processes on κ. The computational efficiency of MLFFs enables us to extend convergence tests beyond conventional limits and to validate predictions through homogeneous nonequilibrium molecular dynamics as well. Our analysis demonstrates that, contrary to some recent claims, fully converged four-phonon processes contribute negligibly to the intrinsic thermal conductivity of both MoS2 and MoSe2. These findings not only refine the intrinsic transport limits of 2D TMDs but also establish MLFF-based approaches as a robust and scalable framework for predictive modeling of phonon-mediated thermal transport in low-dimensional materials.
{"title":"Thermal conductivity limits of MoS2 and MoSe2: Revisiting high-order anharmonic lattice dynamics with machine learning potentials","authors":"Tuğbey Kocabaş, Murat Keçeli, Tanju Gürel, Milorad V. Milošević, Cem Sevik","doi":"10.1063/5.0300627","DOIUrl":"https://doi.org/10.1063/5.0300627","url":null,"abstract":"Group-VI transition metal dichalcogenides (TMDs), MoS2 and MoSe2, have emerged as prototypical low-dimensional systems with distinctive phononic and electronic properties, making them attractive for applications in nanoelectronics, optoelectronics, and thermoelectrics. However, their reported lattice thermal conductivities (κ) remain highly inconsistent, with experimental values and theoretical predictions differing by more than an order of magnitude. These discrepancies stem from uncertainties in measurement techniques, variations in computational protocols, and ambiguities in the treatment of higher-order anharmonic processes. In this study, we critically review these inconsistencies, first by mapping the spread of experimental and modeling results, and then by identifying the methodological origins of divergence. To this end, we bridge first-principles calculations, molecular dynamics simulations, and state-of-the-art machine learning force fields (MLFFs), including recently developed foundation models. We train and benchmark GAP, MACE, NEP, and HIPHIVE against density functional theory and rigorously evaluate the impact of third- and fourth-order phonon scattering processes on κ. The computational efficiency of MLFFs enables us to extend convergence tests beyond conventional limits and to validate predictions through homogeneous nonequilibrium molecular dynamics as well. Our analysis demonstrates that, contrary to some recent claims, fully converged four-phonon processes contribute negligibly to the intrinsic thermal conductivity of both MoS2 and MoSe2. These findings not only refine the intrinsic transport limits of 2D TMDs but also establish MLFF-based approaches as a robust and scalable framework for predictive modeling of phonon-mediated thermal transport in low-dimensional materials.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"12 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145807832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ze-Wen Chen, Xuan-Jun Wang, Rong-Hua Du, Kai-Wen Du, Jia-Yi He, Bing-Jian Zhang, Ke-Xiang Wei, Guang Meng, Hong-Xiang Zou, Lin-Chuan Zhao
Lower limb motion monitoring is in high demand across various application scenarios, such as sports training and rehabilitation. However, existing monitoring systems face significant challenges, including limited power supply sustainability and the lack of mature technologies for three-dimensional motion sensing. To overcome these limitations, this study presents a self-powered three-dimensional lower limb motion monitoring system with full-posture biomechanical energy harvesting capability (TDLM-FPBEH). The system integrates a full-posture biomechanical energy harvester (FPBEH) and a three-dimensional sensing triboelectric nanogenerator (TDS-TENG). The main component of the FPBEH is mounted on the human back, which is more suitable for load-bearing, and it harvests energy from various motion postures without imposing any rigid constraints on body movement, thereby achieving high output power. Meanwhile, the TDS-TENG accurately detects both the direction and the displacement of lower limb movements, enabling comprehensive three-dimensional motion tracking. Experimental results show that under traction excitation at a frequency of 1 Hz and a displacement of 300 mm, a single FPBEH unit delivers an average output power of up to 3.99 W. Furthermore, wearability tests confirm the FPBEH's strong adaptability to various users and motion patterns. The TDS-TENG demonstrates sensitivity to different directions and amplitudes of movement, producing distinguishable electrical signals. Demonstrations involving representative football movements further validate the feasibility of this system for self-powered three-dimensional lower limb motion tracking. Overall, the proposed system offers an integrated solution for sustainable energy harvesting and precise 3D motion monitoring, supporting the requirements of diverse real-world applications.
{"title":"A self-powered three-dimensional lower-limb motion monitoring system with full-posture biomechanical energy harvesting capability","authors":"Ze-Wen Chen, Xuan-Jun Wang, Rong-Hua Du, Kai-Wen Du, Jia-Yi He, Bing-Jian Zhang, Ke-Xiang Wei, Guang Meng, Hong-Xiang Zou, Lin-Chuan Zhao","doi":"10.1063/5.0303989","DOIUrl":"https://doi.org/10.1063/5.0303989","url":null,"abstract":"Lower limb motion monitoring is in high demand across various application scenarios, such as sports training and rehabilitation. However, existing monitoring systems face significant challenges, including limited power supply sustainability and the lack of mature technologies for three-dimensional motion sensing. To overcome these limitations, this study presents a self-powered three-dimensional lower limb motion monitoring system with full-posture biomechanical energy harvesting capability (TDLM-FPBEH). The system integrates a full-posture biomechanical energy harvester (FPBEH) and a three-dimensional sensing triboelectric nanogenerator (TDS-TENG). The main component of the FPBEH is mounted on the human back, which is more suitable for load-bearing, and it harvests energy from various motion postures without imposing any rigid constraints on body movement, thereby achieving high output power. Meanwhile, the TDS-TENG accurately detects both the direction and the displacement of lower limb movements, enabling comprehensive three-dimensional motion tracking. Experimental results show that under traction excitation at a frequency of 1 Hz and a displacement of 300 mm, a single FPBEH unit delivers an average output power of up to 3.99 W. Furthermore, wearability tests confirm the FPBEH's strong adaptability to various users and motion patterns. The TDS-TENG demonstrates sensitivity to different directions and amplitudes of movement, producing distinguishable electrical signals. Demonstrations involving representative football movements further validate the feasibility of this system for self-powered three-dimensional lower limb motion tracking. Overall, the proposed system offers an integrated solution for sustainable energy harvesting and precise 3D motion monitoring, supporting the requirements of diverse real-world applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"24 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145807661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Banerjee, C. Bell, C. Ciccarelli, T. Hesjedal, F. Johnson, H. Kurebayashi, T. A. Moore, C. Moutafis, H. L. Stern, I. J. Vera-Marun, J. Wade, C. Barton, M. R. Connolly, N. J. Curson, K. Fallon, A. J. Fisher, D. A. Gangloff, W. Griggs, E. Linfield, C. H. Marrows, A. Rossi, F. Schindler, J. Smith, T. Thomson, O. Kazakova
In this perspective article, we explore some of the promising spin and topology material platforms (e.g., spins in semiconductors and superconductors, skyrmionic, topological, and two-dimensional materials) being developed for such quantum components as qubits, superconducting memories, sensing, and metrological standards, and discuss their figures of merit. Spin- and topology-related quantum phenomena have several advantages, including high coherence time, topological protection and stability, low error rate, relative ease of engineering and control, and simple initiation and readout. However, the relevant technologies are at different stages of research and development, and here, we discuss their state-of-the-art, potential applications, challenges, and solutions.
{"title":"Materials for quantum technologies: A roadmap for spin and topology","authors":"N. Banerjee, C. Bell, C. Ciccarelli, T. Hesjedal, F. Johnson, H. Kurebayashi, T. A. Moore, C. Moutafis, H. L. Stern, I. J. Vera-Marun, J. Wade, C. Barton, M. R. Connolly, N. J. Curson, K. Fallon, A. J. Fisher, D. A. Gangloff, W. Griggs, E. Linfield, C. H. Marrows, A. Rossi, F. Schindler, J. Smith, T. Thomson, O. Kazakova","doi":"10.1063/5.0294020","DOIUrl":"https://doi.org/10.1063/5.0294020","url":null,"abstract":"In this perspective article, we explore some of the promising spin and topology material platforms (e.g., spins in semiconductors and superconductors, skyrmionic, topological, and two-dimensional materials) being developed for such quantum components as qubits, superconducting memories, sensing, and metrological standards, and discuss their figures of merit. Spin- and topology-related quantum phenomena have several advantages, including high coherence time, topological protection and stability, low error rate, relative ease of engineering and control, and simple initiation and readout. However, the relevant technologies are at different stages of research and development, and here, we discuss their state-of-the-art, potential applications, challenges, and solutions.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"94 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145807618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Gallium oxide-based (GaOx-based) photodetectors possess outstanding weak solar-blind signal detection capability due to low background noise. The bipolar photodetectors with polarity-switchable photoresponse take advantage of multi-dimensional signal recognition and signal processing efficiency. However, as-reported bipolar photodetectors are limited primarily to complex multi-layer heterojunction architectures based on either multi-wavelength absorption or a competitive photoresponse mechanism. The lack of a regulation scheme for implementing and optimizing polarity-switchable photoresponse of simple-structured GaOx-based photodetectors becomes a bottleneck for friendly integration and efficient signal recognition. Herein, introducing a ferroelectric component endows amorphous GaOx/Hf0.5Zr0.5O2 (a-GaOx/HZO) heterojunction photodetectors with programmable self-powered characteristics. The self-powered solar-blind photodetector (SSBPD) exhibits boosted polarity-switchable photoresponse by the coupling of ferro-pyro-phototronic effect. A switchover between positive to negative photoresponse is enabled by switching polarization from the upward state to the downward state. Photo-induced pyroelectric effect boosts bipolar photoresponse of the SSBPD characterized by four-stage photocurrent dynamic behavior. Under superposition contributions of programmable ferroelectric polarization and pyroelectric effect, the photoresponse enhancement factor of the SSBPD is 341% (226%) under upward (downward)-polarization state. Correspondingly, the maximum responsivity and detectivity are up to 0.26 mA/W and 4.47 × 108 Jones, respectively. The SSBPD maintains excellent durability over a wide temperature range. Based on programmable bipolar photoresponse, a-GaOx/HZO photoelectric device displays application prospects in simulating a self-adaptive neuromorphic vision system and a nighttime anti-collision monitoring system. This work proposes a strategy to develop simple-architecture GaOx-based bipolar photodetectors by multiple-effect coupling.
{"title":"Enabling bipolar photoresponse improvement of a-GaOx/Hf0.5Zr0.5O2 heterojunction self-powered solar-blind photodetector by coupling ferro-pyro-phototronic effect","authors":"Hao Xu, Bei Liu, Ling Xin, Weixu Hou, Yikun Li, Wenbo Peng, Qianqian Han, Yuanzheng Zhang, Yaju Zhang, Haiwu Zheng","doi":"10.1063/5.0280051","DOIUrl":"https://doi.org/10.1063/5.0280051","url":null,"abstract":"Gallium oxide-based (GaOx-based) photodetectors possess outstanding weak solar-blind signal detection capability due to low background noise. The bipolar photodetectors with polarity-switchable photoresponse take advantage of multi-dimensional signal recognition and signal processing efficiency. However, as-reported bipolar photodetectors are limited primarily to complex multi-layer heterojunction architectures based on either multi-wavelength absorption or a competitive photoresponse mechanism. The lack of a regulation scheme for implementing and optimizing polarity-switchable photoresponse of simple-structured GaOx-based photodetectors becomes a bottleneck for friendly integration and efficient signal recognition. Herein, introducing a ferroelectric component endows amorphous GaOx/Hf0.5Zr0.5O2 (a-GaOx/HZO) heterojunction photodetectors with programmable self-powered characteristics. The self-powered solar-blind photodetector (SSBPD) exhibits boosted polarity-switchable photoresponse by the coupling of ferro-pyro-phototronic effect. A switchover between positive to negative photoresponse is enabled by switching polarization from the upward state to the downward state. Photo-induced pyroelectric effect boosts bipolar photoresponse of the SSBPD characterized by four-stage photocurrent dynamic behavior. Under superposition contributions of programmable ferroelectric polarization and pyroelectric effect, the photoresponse enhancement factor of the SSBPD is 341% (226%) under upward (downward)-polarization state. Correspondingly, the maximum responsivity and detectivity are up to 0.26 mA/W and 4.47 × 108 Jones, respectively. The SSBPD maintains excellent durability over a wide temperature range. Based on programmable bipolar photoresponse, a-GaOx/HZO photoelectric device displays application prospects in simulating a self-adaptive neuromorphic vision system and a nighttime anti-collision monitoring system. This work proposes a strategy to develop simple-architecture GaOx-based bipolar photodetectors by multiple-effect coupling.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"21 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145770590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bowen Zhang, Zheng Gong, Ruoxi Chen, Xuhuinan Chen, Yi Yang, Hongsheng Chen, Ido Kaminer, Xiao Lin
It has long been thought that the reversed Cherenkov radiation is impossible in homogeneous media with a positive refractive index n. Here, we break this long-held belief by revealing the possibility of creating reversed Cherenkov radiation from homogeneous positive-index moving media. The underlying mechanism is essentially related to the Fizeau–Fresnel drag effect, which provides a unique route to drag the emitted light in the direction of the moving medium and thus enables the possibility of dragging the emitted light in the opposite direction of the moving charged particle. Moreover, we discover the existence of a threshold for the velocity vmedium of moving media, only above which, namely, vmedium>c/n2, the reversed Cherenkov radiation may emerge, where c is the velocity of light in vacuum. Particularly, we find that the reversed Cherenkov radiation inside superluminal moving media (i.e., vmedium>c/n) can become thresholdless for the velocity of moving charged particles.
{"title":"Reversed Cherenkov radiation via Fizeau–Fresnel drag","authors":"Bowen Zhang, Zheng Gong, Ruoxi Chen, Xuhuinan Chen, Yi Yang, Hongsheng Chen, Ido Kaminer, Xiao Lin","doi":"10.1063/5.0296513","DOIUrl":"https://doi.org/10.1063/5.0296513","url":null,"abstract":"It has long been thought that the reversed Cherenkov radiation is impossible in homogeneous media with a positive refractive index n. Here, we break this long-held belief by revealing the possibility of creating reversed Cherenkov radiation from homogeneous positive-index moving media. The underlying mechanism is essentially related to the Fizeau–Fresnel drag effect, which provides a unique route to drag the emitted light in the direction of the moving medium and thus enables the possibility of dragging the emitted light in the opposite direction of the moving charged particle. Moreover, we discover the existence of a threshold for the velocity vmedium of moving media, only above which, namely, vmedium>c/n2, the reversed Cherenkov radiation may emerge, where c is the velocity of light in vacuum. Particularly, we find that the reversed Cherenkov radiation inside superluminal moving media (i.e., vmedium>c/n) can become thresholdless for the velocity of moving charged particles.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"27 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145759396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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