T. Mimura, Reijiro Shimura, Akinori Tateyama, Y. Nakamura, T. Shiraishi, H. Funakubo
The no‐heating deposition of x%YO1.5–(100−x%)(Hf1−yZry)O2 (x = 0−0.09, y = 0, 0.25, 0.50, and 1) is achieved using a radio‐frequency magnetron sputtering method. To investigate the crystal structure and ferroelectric properties, epitaxial films are grown on (111)‐oriented indium tin oxide (ITO)/(111) Y‐stabilized zirconia (YSZ) substrates. The ferroelectric orthorhombic phase is obtained for the 5–7%YO1.5–95–93%HfO2 and 5%YO1.5–95% (Hf0.75Zr0.25)O2 films. The field‐induced phase transition from tetragonal to orthorhombic is confirmed for the 8%YO1.5–92%HfO2 and 5%YO1.5–95%(Hf0.50Zr0.50)O2 films. The remnant polarization (Pr) and coercive field (Ec) are 12–19 μC cm−2 and 2,000–2,500 kV cm−1, respectively. The piezoelectric response of 1 μm thick films is investigated for 6%YO1.5–94% HfO2, 7%YO1.5–93%HfO2, and 5%YO1.5–95%(Hf0.50Zr0.50)O2 films, which have piezoelectric coefficients (d33) of 1.0, 3.3, and 5.0 pm V−1, respectively. These results show no‐heating deposition of x%YO1.5–(100−x%)(Hf1−yZry)O2 films with ferroelectric and piezoelectric properties.
{"title":"No‐Heating Deposition of Ferroelectric x%YO1.5–(100−x%)(Hf1−yZry)O2 Films","authors":"T. Mimura, Reijiro Shimura, Akinori Tateyama, Y. Nakamura, T. Shiraishi, H. Funakubo","doi":"10.1002/pssa.202300100","DOIUrl":"https://doi.org/10.1002/pssa.202300100","url":null,"abstract":"The no‐heating deposition of x%YO1.5–(100−x%)(Hf1−yZry)O2 (x = 0−0.09, y = 0, 0.25, 0.50, and 1) is achieved using a radio‐frequency magnetron sputtering method. To investigate the crystal structure and ferroelectric properties, epitaxial films are grown on (111)‐oriented indium tin oxide (ITO)/(111) Y‐stabilized zirconia (YSZ) substrates. The ferroelectric orthorhombic phase is obtained for the 5–7%YO1.5–95–93%HfO2 and 5%YO1.5–95% (Hf0.75Zr0.25)O2 films. The field‐induced phase transition from tetragonal to orthorhombic is confirmed for the 8%YO1.5–92%HfO2 and 5%YO1.5–95%(Hf0.50Zr0.50)O2 films. The remnant polarization (Pr) and coercive field (Ec) are 12–19 μC cm−2 and 2,000–2,500 kV cm−1, respectively. The piezoelectric response of 1 μm thick films is investigated for 6%YO1.5–94% HfO2, 7%YO1.5–93%HfO2, and 5%YO1.5–95%(Hf0.50Zr0.50)O2 films, which have piezoelectric coefficients (d33) of 1.0, 3.3, and 5.0 pm V−1, respectively. These results show no‐heating deposition of x%YO1.5–(100−x%)(Hf1−yZry)O2 films with ferroelectric and piezoelectric properties.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"62 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73585578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This Special Section of physica status solidi (a) covers presentations of Symposium I held at the 2022 Fall-EMRS Meeting in Warsaw, Poland. Group-IV semiconductors, namely Si, Ge, Sn and their compounds, are the most important materials in microand nanoelectronics but they will also play a key role in future quantum devices. This symposium aimed to share the latest research in the field of group-IV nanoelectronic materials and devices. Silicon (Si) is one of the most dominant semiconductor materials with versatile applications ranging from electronics over photovoltaics to sensors and actuators. Due to their intrinsically higher electron and hole mobility germanium (Ge) or silicongermanium (SiGe) are rapidly gaining interest in microand nanoelectronics. The same holds true for tin (Sn) and its alloys with the other group-IV semiconductors (e.g., GeSn). In current nanoelectronics research with device dimensions approaching the single-digit-nanometer scale, nanowires are often the building blocks of transistors. However, many processing methods and device concepts have to be adopted since nanostructures are generically subject to nano-size and quantum effects. These effects involve for instance quantum confinement, dielectric confinement, detrimental surface states, statistical issues of doping ultrasmall volumes, etc. This bears the risk to deteriorate the performance and reliability or even cause complete failure of the transistors. On the other hand, if fully understood, nano-size and quantum effects may open up new vistas for increased performance, reduced power consumption or even routes towards quantum computing. Generally, nanostructures have a high surface-to-volume ratio and their properties are often dominated by the surface. Therefore, an increased understanding of the physical and chemical properties of group-IV semiconductor nanostructure interfaces to metals and dielectrics is mandatory to control and optimize gate control, threshold voltage, ohmic contacts, carrier transport, etc. Finally, simulations and modelling are crucial for nanoelectronics, starting from ab-initio methods to model physical/ quantum-chemical properties of group-IV nanostructures to device simulations modelling transport and performance. There are in total four research articles in this Special Section: Knoch et al. investigate by simulations and experiments the influence of the oxide-channel interfaces on the switching behavior of cryogenic field-effect transistors as well as the possibility to use a different approach than conventional doping for ultrasmall Si-nanostructures (article number 2300069). Ratschinski et al. report about another alternative silicon doping method, similar to modulation doping of III–V semiconductors, that is based on Al-doped SiO2 shells around Si nanowires (article number 2300068). The authors reveal that the electrical resistance of the nanowires is thereby reduced by several orders of magnitude. In article number 2300066, Frentzen
{"title":"Group‐IV Semiconductor Materials for Nanoelectronics and Cryogenic Electronics","authors":"D. Hiller, R. Duffy, V. Georgiev, W. Weber","doi":"10.1002/pssa.202300429","DOIUrl":"https://doi.org/10.1002/pssa.202300429","url":null,"abstract":"This Special Section of physica status solidi (a) covers presentations of Symposium I held at the 2022 Fall-EMRS Meeting in Warsaw, Poland. Group-IV semiconductors, namely Si, Ge, Sn and their compounds, are the most important materials in microand nanoelectronics but they will also play a key role in future quantum devices. This symposium aimed to share the latest research in the field of group-IV nanoelectronic materials and devices. Silicon (Si) is one of the most dominant semiconductor materials with versatile applications ranging from electronics over photovoltaics to sensors and actuators. Due to their intrinsically higher electron and hole mobility germanium (Ge) or silicongermanium (SiGe) are rapidly gaining interest in microand nanoelectronics. The same holds true for tin (Sn) and its alloys with the other group-IV semiconductors (e.g., GeSn). In current nanoelectronics research with device dimensions approaching the single-digit-nanometer scale, nanowires are often the building blocks of transistors. However, many processing methods and device concepts have to be adopted since nanostructures are generically subject to nano-size and quantum effects. These effects involve for instance quantum confinement, dielectric confinement, detrimental surface states, statistical issues of doping ultrasmall volumes, etc. This bears the risk to deteriorate the performance and reliability or even cause complete failure of the transistors. On the other hand, if fully understood, nano-size and quantum effects may open up new vistas for increased performance, reduced power consumption or even routes towards quantum computing. Generally, nanostructures have a high surface-to-volume ratio and their properties are often dominated by the surface. Therefore, an increased understanding of the physical and chemical properties of group-IV semiconductor nanostructure interfaces to metals and dielectrics is mandatory to control and optimize gate control, threshold voltage, ohmic contacts, carrier transport, etc. Finally, simulations and modelling are crucial for nanoelectronics, starting from ab-initio methods to model physical/ quantum-chemical properties of group-IV nanostructures to device simulations modelling transport and performance. There are in total four research articles in this Special Section: Knoch et al. investigate by simulations and experiments the influence of the oxide-channel interfaces on the switching behavior of cryogenic field-effect transistors as well as the possibility to use a different approach than conventional doping for ultrasmall Si-nanostructures (article number 2300069). Ratschinski et al. report about another alternative silicon doping method, similar to modulation doping of III–V semiconductors, that is based on Al-doped SiO2 shells around Si nanowires (article number 2300068). The authors reveal that the electrical resistance of the nanowires is thereby reduced by several orders of magnitude. In article number 2300066, Frentzen","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"67 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81287019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Influence of Different Nitrogen Plasmas Exposures of H‐Diamond (100) Surfaces on Ambient Oxygen Adsorption, Nitrogen Bonding and Thermal Stability Studied by X‐Ray Photoelectron Spectroscopy","authors":"M. K. Kuntumalla, A. Hoffman","doi":"10.1002/pssa.202300319","DOIUrl":"https://doi.org/10.1002/pssa.202300319","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"172 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72482297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jintao Xu, W. Luo, Dailei Zhu, Gengyu Wang, Yuedong Wang, Y. Shuai, Chuangui Wu, W. Zhang
4H–SiC single‐crystal film is transferred to SiO2/Si insulating substrate by crystal‐ion‐slicing technology to form silicon carbide‐on‐insulator composite substrate, and the composite substrate is etched by low energy Ar+ ions irradiation. The amorphous oxide layer and defect layer are found on the surface of the exfoliated SiC film by using transmission electron microscopy and energy‐dispersive spectroscopy. Scanning electron microscopy, atomic force microscopy, and Raman spectroscopy are used to characterize the thickness, roughness, and crystal quality of the exfoliated SiC film. The result shows that the thickness of the film decreases from 1.238 to 0.911 μm, and the root mean square roughness decreases from 1.408 to 0.635 nm. Raman spectra show that the crystal quality of the SiC film is improved after etching. Moreover, the oxidation layer and defect layer on the surface of the SiC film can be quickly etched by Ar+ ions irradiation.
{"title":"Effect of Low Energy Argon Ions Etching on the 4H–SiCOI Composite Substrate Prepared by Crystal‐Ion‐Slicing Technique","authors":"Jintao Xu, W. Luo, Dailei Zhu, Gengyu Wang, Yuedong Wang, Y. Shuai, Chuangui Wu, W. Zhang","doi":"10.1002/pssa.202300288","DOIUrl":"https://doi.org/10.1002/pssa.202300288","url":null,"abstract":"4H–SiC single‐crystal film is transferred to SiO2/Si insulating substrate by crystal‐ion‐slicing technology to form silicon carbide‐on‐insulator composite substrate, and the composite substrate is etched by low energy Ar+ ions irradiation. The amorphous oxide layer and defect layer are found on the surface of the exfoliated SiC film by using transmission electron microscopy and energy‐dispersive spectroscopy. Scanning electron microscopy, atomic force microscopy, and Raman spectroscopy are used to characterize the thickness, roughness, and crystal quality of the exfoliated SiC film. The result shows that the thickness of the film decreases from 1.238 to 0.911 μm, and the root mean square roughness decreases from 1.408 to 0.635 nm. Raman spectra show that the crystal quality of the SiC film is improved after etching. Moreover, the oxidation layer and defect layer on the surface of the SiC film can be quickly etched by Ar+ ions irradiation.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"114 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79242668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"P(VDF/TrFE) Thin Film Piezoelectric Actuators Sealed Parylene C for Medical Micropumps","authors":"Keigo Shikata, Y. Koshiba, S. Horike, K. Ishida","doi":"10.1002/pssa.202300250","DOIUrl":"https://doi.org/10.1002/pssa.202300250","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"24 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87443853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Seon-Young Rhim, Max Heyl, Kurt Busch, E. List‐Kratochvil
{"title":"Binary Addressable Optical Multiplexing Waveguides via Electrochromic Switching","authors":"Seon-Young Rhim, Max Heyl, Kurt Busch, E. List‐Kratochvil","doi":"10.1002/pssa.202300177","DOIUrl":"https://doi.org/10.1002/pssa.202300177","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87890355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Purabiarao, T.K. Lahane, Jitesh Agarwal, Anshu Sahu, Vipul Singh, I. Palani
{"title":"Investigations on the Effect of Laser Texturing of Kapton Polyimide on the Piezoelectric Response of ZnO based Nanogenerators","authors":"N. Purabiarao, T.K. Lahane, Jitesh Agarwal, Anshu Sahu, Vipul Singh, I. Palani","doi":"10.1002/pssa.202300255","DOIUrl":"https://doi.org/10.1002/pssa.202300255","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89583518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. V. Reddy, M. Kostrzewa, A. Sekhar, A. Ingram, A. Siva, Sesha Reddy, N. Venkatramaiah, G. N. Raju, V. Kumar, N. Veeraiah
Herein, a study on the dielectric properties of ZnO–P2O5–SeO2 glass ceramics containing varied contents of Ag2O is presented. Structural analysis of the samples by X‐ray diffraction, transmission electron microscopy, differential scanning calorimetry, Fourier transform infrared spectra, and optical absorption techniques indicated that the glasses are embedded with Ag3PO4, Ag2SeO3, and Zn3(PO4)2 anisotropic crystal phases along with Ag+ ions and Ag0 particles. Dielectric properties, ac conductivity (σac), and dielectric breakdown strength (DBS) are investigated as functions of Ag2O concentration. The results show the maximal concentration of Ag+ ions and Ag0 metallic particles in the sample containing 0.6 mol% of Ag2O. Dielectric parameters and (σac) increase with increasing Ag2O up to 0.6 mol%, while the DBS and electrical impedance decrease. The observed dipolar effects are quantitatively analyzed and possible dipoles are identified. Ionic contribution is predominant up to 0.6 mol% of Ag2O, beyond which the polaronic tunneling phenomenon prevails. These findings indicate that 0.6 mol% of Ag2O is the optimal concentration for using these glass ceramics as solid electrolytes in ionic batteries. Moreover, glass ceramics containing Ag2O beyond 0.6 mol% have exhibited larger polaronic conductivity, hence such glasses can be considered suitable candidates for electrodes in ionic batteries.
{"title":"The Influence of Silver Ions on the Dielectric Dispersion Dipolar Relaxation Dynamics and Dielectric Breakdown Strength of Zinc Selenium Phosphate Glass System","authors":"G. V. Reddy, M. Kostrzewa, A. Sekhar, A. Ingram, A. Siva, Sesha Reddy, N. Venkatramaiah, G. N. Raju, V. Kumar, N. Veeraiah","doi":"10.1002/pssa.202300282","DOIUrl":"https://doi.org/10.1002/pssa.202300282","url":null,"abstract":"Herein, a study on the dielectric properties of ZnO–P2O5–SeO2 glass ceramics containing varied contents of Ag2O is presented. Structural analysis of the samples by X‐ray diffraction, transmission electron microscopy, differential scanning calorimetry, Fourier transform infrared spectra, and optical absorption techniques indicated that the glasses are embedded with Ag3PO4, Ag2SeO3, and Zn3(PO4)2 anisotropic crystal phases along with Ag+ ions and Ag0 particles. Dielectric properties, ac conductivity (σac), and dielectric breakdown strength (DBS) are investigated as functions of Ag2O concentration. The results show the maximal concentration of Ag+ ions and Ag0 metallic particles in the sample containing 0.6 mol% of Ag2O. Dielectric parameters and (σac) increase with increasing Ag2O up to 0.6 mol%, while the DBS and electrical impedance decrease. The observed dipolar effects are quantitatively analyzed and possible dipoles are identified. Ionic contribution is predominant up to 0.6 mol% of Ag2O, beyond which the polaronic tunneling phenomenon prevails. These findings indicate that 0.6 mol% of Ag2O is the optimal concentration for using these glass ceramics as solid electrolytes in ionic batteries. Moreover, glass ceramics containing Ag2O beyond 0.6 mol% have exhibited larger polaronic conductivity, hence such glasses can be considered suitable candidates for electrodes in ionic batteries.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87052458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Controlling the TiO2‐Dye Nanomolecular Interactions for Improving the Photoconversion in Transparent Dye‐sensitized Solar Cells","authors":"Pritha Roy, Y. Kurokawa, S. Pandey","doi":"10.1002/pssa.202300158","DOIUrl":"https://doi.org/10.1002/pssa.202300158","url":null,"abstract":"","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"75 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74500007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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