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Semiconductor photocatalytic antibacterial materials and their application for bone infection treatment.
IF 8 2区 材料科学 Q1 CHEMISTRY, PHYSICAL Pub Date : 2025-01-24 DOI: 10.1039/d4nh00542b
Ruizhong He, Yulong Gu, Jiye Jia, Feng Yang, Ping Wu, Pei Feng, Cijun Shuai

Bacterial infection in bone tissue engineering is a severe clinical issue. Traditional antimicrobial methods usually cause problems such as bacterial resistance and biosecurity. Employing semiconductor photocatalytic antibacterial materials is a more controlled and safer strategy, wherein semiconductor photocatalytic materials generate reactive oxygen species under illumination for killing bacteria by destroying their cell membranes, proteins, DNA, etc. In this review, P-type and N-type semiconductor photocatalytic materials and their antibacterial mechanisms are introduced. Type II heterojunctions, P-N heterojunctions, type Z heterojunctions and Schottky junctions have been reported to reduce the recombination of carriers, while element doping, sensitization and up-conversion luminescence expand the photoresponse range. Furthermore, the applications of semiconductor photocatalytic antibacterial materials in bone infection treatment such as osteomyelitis treatment, bone defect repair and dental tissue regeneration are summarized. Finally, the conclusion and future prospects of semiconductor photocatalytic antibacterial materials in bone tissue engineering were analyzed.

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引用次数: 0
Forming and compliance-free operation of low-energy, fast-switching HfOxSy/HfS2 memristors.
IF 8 2区 材料科学 Q1 CHEMISTRY, PHYSICAL Pub Date : 2025-01-23 DOI: 10.1039/d4nh00508b
Aferdita Xhameni, AbdulAziz AlMutairi, Xuyun Guo, Irina Chircă, Tianyi Wen, Stephan Hofmann, Valeria Nicolosi, Antonio Lombardo

We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS2). Semiconductor-oxide heterostructures are achieved by low temperature (<300 °C) thermal oxidation of HfS2 under dry conditions, carefully controlling process parameters. The resulting HfOxSy/HfS2 heterostructures are integrated between metal contacts, forming vertical crossbar devices. Forming-free, compliance-free resistive switching between non-volatile states is demonstrated by applying voltage pulses and measuring the current response in time. We show non-volatile memory operation with an RON/ROFF of 102, programmable by 80 ns WRITE and ERASE operations. Multiple stable resistance states are achieved by modulating pulse width and amplitude, down to 60 ns, < 20 pJ operation. This demonstrates the capability of these devices for low-energy, fast-switching and multi-state programming. Resistance states were retained without fail at 150 °C over 104 s, showcasing the potential of these devices for long retention times and resilience to ageing. Low-energy resistive switching measurements were repeated under vacuum (8.6 mbar) showing unchanged characteristics and no dependence of the device on surrounding oxygen or water vapour. Using a technology computer-aided design (TCAD) tool, we explore the role of the semiconductor layer in tuning the device conductance and driving gradual resistive switching in 2D HfOx-based devices.

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引用次数: 0
Elucidating the role of oxidation in two-dimensional silicon nanosheets. 阐明氧化在二维硅纳米片中的作用。
IF 8 2区 材料科学 Q1 CHEMISTRY, PHYSICAL Pub Date : 2025-01-22 DOI: 10.1039/d4nh00387j
Jeremy B Essner, Abhijit Bera, Maharram Jabrayilov, Abhishek Chaudhari, Benjamin T Diroll, Julia V Zaikina, Matthew G Panthani

We report a synthetic protocol that yields hydrogen-terminated 2D silicon nanosheets with greatly reduced siloxane (e.g., Si-O-Si, OxSi) content. These nanosheets displayed weak, broad photoluminescence centered near 610 nm with a low absolute photoluminescence quantum yield (as low as 0.2%). By intentionally oxidizing the nanosheets, the photoluminescence peak emission wavelength blueshifted to 510 nm, and the quantum yield increased by more than an order of magnitude to 8.5%. These results demonstrate that oxidation of 2D silicon nanosheets modulates the material's bandgap and suggests that previously reported photoluminescence properties for this material resulted, in part, from oxidation.

我们报告了一种合成方案,可以产生端氢的二维硅纳米片,其硅氧烷(例如Si-O-Si, OxSi)含量大大降低。这些纳米片在610 nm附近显示出微弱、宽的光致发光,绝对光致发光量子产率低(低至0.2%)。通过有意氧化,纳米片的光致发光峰发射波长蓝移至510 nm,量子产率提高了一个多数量级,达到8.5%。这些结果表明,二维硅纳米片的氧化调节了材料的带隙,并表明先前报道的这种材料的光致发光特性部分是由氧化引起的。
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引用次数: 0
Correction: Single glucose molecule transport process revealed by force tracing and molecular dynamics simulations. 更正:单葡萄糖分子的运输过程揭示了力追踪和分子动力学模拟。
IF 8 2区 材料科学 Q1 CHEMISTRY, PHYSICAL Pub Date : 2025-01-22 DOI: 10.1039/d5nh90006a
Yangang Pan, Yuebin Zhang, Pianchou Gongpan, Qingrong Zhang, Siteng Huang, Bin Wang, Bingqian Xu, Yuping Shan, Wenyong Xiong, Guohui Li, Hongda Wang

Correction for 'Single glucose molecule transport process revealed by force tracing and molecular dynamics simulations' by Yangang Pan et al., Nanoscale Horiz., 2018, 3, 517-524, https://doi.org/10.1039/C8NH00056E.

修正了“单葡萄糖分子运输过程通过力追踪和分子动力学模拟揭示”,作者:潘阳刚等人,Nanoscale horizon。浙江农业学报,2018,35 (5):517-524,https://doi.org/10.1039/C8NH00056E。
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引用次数: 0
Biocomposites of 2D layered materials. 二维层状材料的生物复合材料。
IF 8 2区 材料科学 Q1 CHEMISTRY, PHYSICAL Pub Date : 2025-01-16 DOI: 10.1039/d4nh00530a
Mert Vural, Melik C Demirel

Molecular composites, such as bone and nacre, are everywhere in nature and play crucial roles, ranging from self-defense to carbon sequestration. Extensive research has been conducted on constructing inorganic layered materials at an atomic level inspired by natural composites. These layered materials exfoliated to 2D crystals are an emerging family of nanomaterials with extraordinary properties. These biocomposites are great for modulating electron, photon, and phonon transport in nanoelectronics and photonic devices but are challenging to translate into bulk materials. Combining 2D crystals with biomolecules enables various 2D nanocomposites with novel characteristics. This review has provided an overview of the latest biocomposites, including their structure, composition, and characterization. Layered biocomposites have the potential to improve the performance of many devices. For example, biocomposites use macromolecules to control the organization of 2D crystals, allowing for new capabilities such as flexible electronics and energy storage. Other applications of 2D biocomposites include biomedical imaging, tissue engineering, chemical and biological sensing, gas and liquid filtration, and soft robotics. However, some fundamental questions need to be answered, such as self-assembly and kinetically limited states of organic-inorganic phases in soft matter physics.

分子复合材料,如骨头和珍珠,在自然界中无处不在,发挥着至关重要的作用,从自卫到碳封存。受天然复合材料的启发,在原子水平上构建无机层状材料进行了广泛的研究。这些剥离成二维晶体的层状材料是一种具有非凡性能的新兴纳米材料家族。这些生物复合材料在纳米电子和光子器件中调制电子、光子和声子输运方面非常出色,但转化为块状材料具有挑战性。将二维晶体与生物分子相结合,使各种二维纳米复合材料具有新颖的特性。本文综述了生物复合材料的结构、组成和表征等方面的最新进展。层状生物复合材料有潜力改善许多设备的性能。例如,生物复合材料使用大分子来控制二维晶体的组织,从而实现柔性电子和能量存储等新功能。2D生物复合材料的其他应用包括生物医学成像、组织工程、化学和生物传感、气体和液体过滤以及软机器人。然而,软物质物理中有机-无机相的自组装和动力学限制态等一些基本问题需要回答。
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引用次数: 0
Dipole-induced transitions from Schottky to Ohmic contact at Janus MoSiGeN4/metal interfaces. 偶极子诱导Janus MoSiGeN4/金属界面从肖特基接触到欧姆接触的转变。
IF 8 2区 材料科学 Q1 CHEMISTRY, PHYSICAL Pub Date : 2025-01-15 DOI: 10.1039/d4nh00493k
Wen Ai, Xiaohui Hu, Tao Xu, Jian Yang, Litao Sun

Janus MoSiGeN4 monolayers exhibit exceptional mechanical stability and high electron mobility, which make them a promising channel candidate for field-effect transistors (FETs). However, the high Schottky barrier at the contact interface would limit the carrier injection efficiency and degrade device performance. Herein, using density functional theory calculations and machine learning methods, we investigated the interfacial properties of the Janus MoSiGeN4 monolayer and metal electrode contacts. The results demonstrated that the n-type/p-type Schottky and n-type Ohmic contacts can be realized in metal/MoSiGeN4 by changing the built-in electric dipole orientation of MoSiGeN4. Specifically, the contact type of Cu/MoSiGeN4 (Au/MoSiGeN4) transfers from an n-type Schottky (p-type Schottky) contact to an n-type Ohmic (n-type Schottky) contact when the contact side of MoSiGeN4 switches from Si-N to Ge-N. In addition, the Fermi level pinning (FLP) effect of metal/MoSiGeN4 with the Si-N side is weaker than that of metal/MoSiGeN4 with the Ge-N side due to the effect of intrinsic dipole and interface dipole. Notably, a simplified mathematical expression ΔV/WM is developed to describe the Schottky barrier height at metal/MoSiGeN4 interfaces using the machine learning method. These findings offer valuable guidance for the design and development of high-performance Janus MoSiGeN4-based electronic devices.

Janus MoSiGeN4单层具有优异的机械稳定性和高电子迁移率,这使其成为场效应晶体管(fet)的有前途的沟道候选者。然而,接触界面处的高肖特基势垒会限制载流子注入效率并降低器件性能。本文采用密度泛函理论计算和机器学习方法,研究了Janus MoSiGeN4单层与金属电极接触的界面特性。结果表明,通过改变MoSiGeN4的内置电偶极子取向,可以在金属/MoSiGeN4中实现n型/p型肖特基和n型欧姆触点。具体来说,当MoSiGeN4的接触侧从Si-N切换到Ge-N时,Cu/MoSiGeN4 (Au/MoSiGeN4)的接触类型从n型肖特基(p型肖特基)接触转移到n型欧姆(n型肖特基)接触。此外,由于本质偶极子和界面偶极子的影响,Si-N侧的金属/MoSiGeN4的费米能级钉钉效应(FLP)弱于Ge-N侧的金属/MoSiGeN4。值得注意的是,利用机器学习方法,开发了一个简化的数学表达式ΔV/WM来描述金属/MoSiGeN4界面上的肖特基势垒高度。这些发现为基于Janus mosigen4的高性能电子器件的设计和开发提供了有价值的指导。
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引用次数: 0
Enhanced upconversion and photoconductive nanocomposites of lanthanide-doped nanoparticles functionalized with low-vibrational-energy inorganic ligands. 以低振动能无机配体功能化的镧掺杂纳米粒子增强上转换和光导纳米复合材料。
IF 8 2区 材料科学 Q1 CHEMISTRY, PHYSICAL Pub Date : 2025-01-14 DOI: 10.1039/d4nh00555d
Jia-Ahn Pan, Xiao Qi, Emory M Chan

Upconverting nanoparticles (UCNPs) convert near-infrared (IR) light into higher-energy visible light, allowing them to be used in applications such as biological imaging, nano-thermometry, and photodetection. It is well known that the upconversion luminescent efficiency of UCNPs can be enhanced by using a host material with low phonon energies, but the use of low-vibrational-energy inorganic ligands and non-epitaxial shells has been relatively underexplored. Here, we investigate the functionalization of lanthanide-doped NaYF4 UCNPs with low-vibrational-energy Sn2S64- ligands. Raman spectroscopy and elemental mapping are employed to confirm the binding of Sn2S64- ligands to UCNPs. This binding enhances upconversion efficiencies up to a factor of 16, consistent with an increase in the luminescent lifetimes of the lanthanide ions. Annealing Sn2S64--capped UCNPs results in the formation of a nanocomposite comprised of UCNPs embedded within an interconnected matrix of SnS2, enabling each UCNP to be electrically accessible through the semiconducting SnS2 matrix. This facilitates the integration of UCNPs into electronic devices, which we demonstrate through the fabrication of a UCNP-SnS2 photodetector that detects UV and near-IR light. Our findings show the promise of using inorganic capping agents to enhance the properties of UCNPs while facilitating their integration into optoelectronic devices.

上转换纳米粒子(UCNPs)将近红外(IR)光转换为能量更高的可见光,使其能够用于生物成像、纳米测温和光探测等应用中。众所周知,使用低声子能量的宿主材料可以提高UCNPs的上转换发光效率,但使用低振动能量的无机配体和非外延壳的探索相对较少。在这里,我们用低振动能Sn2S64-配体研究了镧掺杂的NaYF4 UCNPs的功能化。利用拉曼光谱和元素作图证实了Sn2S64-配体与UCNPs的结合。这种结合将上转换效率提高了16倍,这与镧系离子发光寿命的增加是一致的。退火Sn2S64覆盖的UCNP导致形成由嵌入在相互连接的SnS2矩阵中的UCNP组成的纳米复合材料,使每个UCNP可以通过半导体SnS2矩阵电访问。这有助于将ucnp集成到电子设备中,我们通过制造检测紫外线和近红外光的UCNP-SnS2光电探测器来证明这一点。我们的研究结果表明,使用无机封盖剂可以增强UCNPs的性能,同时促进其集成到光电器件中。
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引用次数: 0
Spillover of active oxygen intermediates of binary RuO2/Nb2O5 nanowires for highly active and robust acidic oxygen evolution. 二元RuO2/Nb2O5纳米线中活性氧中间体的外溢及高活性强酸性析氧
IF 8 2区 材料科学 Q1 CHEMISTRY, PHYSICAL Pub Date : 2025-01-13 DOI: 10.1039/d4nh00437j
Linqing Liao, Wangyan Gou, Mingkai Zhang, Xiaohe Tan, Zening Qi, Min Xie, Yuanyuan Ma, Yongquan Qu

Over-oxidation of surface ruthenium active sites of RuOx-based electrocatalysts leads to the formation of soluble high-valent Ru species and subsequent structural collapse of electrocatalysts, which results in their low stability for the acidic oxygen evolution reaction (OER). Herein, a binary RuO2/Nb2O5 electrocatalyst with abundant and intimate interfaces has been rationally designed and synthesized to enhance its OER activity in acidic electrolyte, delivering a low overpotential of 179 mV at 10 mA cm-2, a small Tafel slope of 73 mV dec-1, and a stabilized catalytic durability over a period of 750 h. Extensive experiments have demonstrated that the spillover of active oxygen intermediates from RuO2 to Nb2O5 and the subsequent participation of lattice oxygen of Nb2O5 instead of RuO2 for the acidic OER suppressed the over-oxidation of surface ruthenium species and thereby improved the catalytic stability of the binary electrocatalysts.

若氧基电催化剂表面钌活性位点的过度氧化导致可溶高价钌的形成,导致电催化剂的结构崩溃,导致其酸性析氧反应(OER)的稳定性较低。本文合理设计并合成了界面丰富、界面紧密的二元RuO2/Nb2O5电催化剂,提高了其在酸性电解质中的OER活性,在10 mA cm-2下的过电位为179 mV, Tafel斜率为73 mV / dec1。大量的实验表明,活性氧中间体从RuO2溢出到Nb2O5,随后Nb2O5的晶格氧代替RuO2参与酸性OER,抑制了表面钌的过度氧化,从而提高了二元电催化剂的催化稳定性。
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引用次数: 0
Nanoparticle assembly with customisable fluorescence properties and excellent biocompatibility. 纳米粒子组装具有可定制的荧光特性和良好的生物相容性。
IF 8 2区 材料科学 Q1 CHEMISTRY, PHYSICAL Pub Date : 2025-01-07 DOI: 10.1039/d4nh90084g
Ignacio Insua

This article highlights the recent work by Wang, Qi, et al. (Nanoscale Horiz., 2024, https://doi.org/10.1039/D4NH00400K) on the full-color peptide-based fluorescent nanomaterials assembled under the control of amino acid doping.

本文重点介绍了Wang, Qi等人在纳米尺度视界方面的最新工作。, 2024, https://doi.org/10.1039/D4NH00400K)在氨基酸掺杂控制下组装的全色肽基荧光纳米材料。
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引用次数: 0
Mechanism of oxygen reduction via chemical affinity in NiO/SiO2 interfaces irradiated with keV energy hydrogen and helium ions for heterostructure fabrication. 氢氦离子辐照制备异质结构时NiO/SiO2界面化学亲和还原氧的机理
IF 8 2区 材料科学 Q1 CHEMISTRY, PHYSICAL Pub Date : 2025-01-02 DOI: 10.1039/d4nh00460d
Mario Mery, Claudio Gonzalez-Fuentes, Igor Stanković, Jorge M Nuñez, Jorge E Valdés, Myriam H Aguirre, Carlos García

Low-energy light ion beams are an essential resource in lithography for nanopatterning magnetic materials and interfaces due to their ability to modify the structure and properties of metamaterials. Here we create ferromagnetic/non-ferromagnetic heterostructures with a controlled layer thickness and nanometer-scale precision. For this, hydrogen ion (H+) irradiation is used to reduce the antiferromagnetic nickel oxide (NiO) layer into ferromagnetic Ni with lower fluence than in the case of helium ion (He+) irradiation. Our results indicate that H+ chemical affinity with oxygen is the primary mechanism for efficient atom remotion, as opposed to He+ irradiation, where the chemical affinity for oxygen is negligible.

由于低能光离子束能够改变超材料的结构和性能,因此在纳米磁性材料和界面的光刻中是必不可少的资源。在这里,我们创建了具有控制层厚度和纳米级精度的铁磁/非铁磁异质结构。为此,采用氢离子(H+)辐照将反铁磁性的氧化镍(NiO)层还原为铁磁性的Ni,其影响比氦离子(He+)辐照更低。我们的研究结果表明,H+与氧的化学亲和力是有效原子去除的主要机制,而不是He+辐照,在那里对氧的化学亲和力可以忽略不计。
{"title":"Mechanism of oxygen reduction <i>via</i> chemical affinity in NiO/SiO<sub>2</sub> interfaces irradiated with keV energy hydrogen and helium ions for heterostructure fabrication.","authors":"Mario Mery, Claudio Gonzalez-Fuentes, Igor Stanković, Jorge M Nuñez, Jorge E Valdés, Myriam H Aguirre, Carlos García","doi":"10.1039/d4nh00460d","DOIUrl":"https://doi.org/10.1039/d4nh00460d","url":null,"abstract":"<p><p>Low-energy light ion beams are an essential resource in lithography for nanopatterning magnetic materials and interfaces due to their ability to modify the structure and properties of metamaterials. Here we create ferromagnetic/non-ferromagnetic heterostructures with a controlled layer thickness and nanometer-scale precision. For this, hydrogen ion (H<sup>+</sup>) irradiation is used to reduce the antiferromagnetic nickel oxide (NiO) layer into ferromagnetic Ni with lower fluence than in the case of helium ion (He<sup>+</sup>) irradiation. Our results indicate that H<sup>+</sup> chemical affinity with oxygen is the primary mechanism for efficient atom remotion, as opposed to He<sup>+</sup> irradiation, where the chemical affinity for oxygen is negligible.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" ","pages":""},"PeriodicalIF":8.0,"publicationDate":"2025-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142913305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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