J. S. Anjali Devi, S. Madanan Anju, G. M. Lekha, R. S. Aparna and Sony George
Ultra-small nanoparticles, including quantum dots, gold nanoclusters (AuNCs) and carbon dots (CDs), have emerged as a promising class of fluorescent material because of their molecular-like properties and widespread applications in sensing and imaging. However, the fluorescence properties of ultra-small gold nanoparticles (i.e., AuNCs) and CDs are more complicated and well distinguished from conventional quantum dots or organic dye molecules. At this frontier, we highlight recent developments in the fundamental understanding of the fluorescence emission mechanism of these ultra-small nanoparticles. Moreover, this review carefully analyses the underlying principles of ultra-small nanoparticle sensors. We expect that this information on ultra-small nanoparticles will fuel research aimed at achieving precise control over their fluorescence properties and the broadening of their applications.
{"title":"Luminescent carbon dots versus quantum dots and gold nanoclusters as sensors†","authors":"J. S. Anjali Devi, S. Madanan Anju, G. M. Lekha, R. S. Aparna and Sony George","doi":"10.1039/D4NH00107A","DOIUrl":"10.1039/D4NH00107A","url":null,"abstract":"<p >Ultra-small nanoparticles, including quantum dots, gold nanoclusters (AuNCs) and carbon dots (CDs), have emerged as a promising class of fluorescent material because of their molecular-like properties and widespread applications in sensing and imaging. However, the fluorescence properties of ultra-small gold nanoparticles (<em>i.e.</em>, AuNCs) and CDs are more complicated and well distinguished from conventional quantum dots or organic dye molecules. At this frontier, we highlight recent developments in the fundamental understanding of the fluorescence emission mechanism of these ultra-small nanoparticles. Moreover, this review carefully analyses the underlying principles of ultra-small nanoparticle sensors. We expect that this information on ultra-small nanoparticles will fuel research aimed at achieving precise control over their fluorescence properties and the broadening of their applications.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 10","pages":" 1683-1702"},"PeriodicalIF":8.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141571817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
2D semiconductors, represented by transition metal dichalcogenides (TMDs), have the potential to be alternative channel materials for advanced 3D field-effect transistors, such as gate-all-around field-effect-transistors (GAAFETs) and complementary field-effect-transistors (C-FETs), due to their inherent atomic thinness, moderate mobility, and short scaling lengths. However, 2D semiconductors encounter several technological challenges, especially the high contact resistance issue between 2D semiconductors and metals. This review provides a comprehensive overview of the high contact resistance issue in 2D semiconductors, including its physical background and the efforts to address it, with respect to their applicability to GAAFET structures.
{"title":"Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors","authors":"Byeongchan Kim, Seojoo Lee and Jin-Hong Park","doi":"10.1039/D4NH00030G","DOIUrl":"10.1039/D4NH00030G","url":null,"abstract":"<p >2D semiconductors, represented by transition metal dichalcogenides (TMDs), have the potential to be alternative channel materials for advanced 3D field-effect transistors, such as gate-all-around field-effect-transistors (GAAFETs) and complementary field-effect-transistors (C-FETs), due to their inherent atomic thinness, moderate mobility, and short scaling lengths. However, 2D semiconductors encounter several technological challenges, especially the high contact resistance issue between 2D semiconductors and metals. This review provides a comprehensive overview of the high contact resistance issue in 2D semiconductors, including its physical background and the efforts to address it, with respect to their applicability to GAAFET structures.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 9","pages":" 1417-1431"},"PeriodicalIF":8.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141553645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wei Wang, Bergoi Ibarlucea, Chuanhui Huang, Renhao Dong, Muhannad Al Aiti, Shirong Huang and Gianaurelio Cuniberti
The escalating threat of environmental issues to both nature and humanity over the past two decades underscores the urgency of addressing environmental pollutants. Metal–organic frameworks (MOFs) have emerged as highly promising materials for tackling these challenges. Since their rise in popularity, extensive research has been conducted on MOFs, spanning from design and synthesis to a wide array of applications, such as environmental remediation, gas storage and separation, catalysis, sensors, biomedical and drug delivery systems, energy storage and conversion, and optoelectronic devices, etc. MOFs possess a multitude of advantageous properties such as large specific surface area, tunable porosity, diverse pore structures, multi-channel design, and molecular sieve capabilities, etc., making them particularly attractive for environmental applications. MOF-based composites inherit the excellent properties of MOFs and also exhibit unique physicochemical properties and structures. The tailoring of central coordinated metal ions in MOFs is critical for their adaptability in environmental applications. Although many reviews on monometallic, bimetallic, and polymetallic MOFs have been published, few reviews focusing on MOF-based composites with monometallic, bimetallic, and multi-metallic centers in the context of environmental pollutant treatment have been reported. This review addresses this gap by providing an in-depth overview of the recent progress in MOF-based composites, emphasizing their applications in hazardous gas sensing, electromagnetic wave absorption (EMWA), and pollutant degradation in both aqueous and atmospheric environments and highlighting the importance of the number and type of metal centers present. Additionally, the various categories of MOFs are summarized. MOF-based composites demonstrate significant promise in addressing environmental challenges, and this review provides a clear and valuable perspective on their potential in environmental applications.
{"title":"Multi-metallic MOF based composites for environmental applications: synergizing metal centers and interactions","authors":"Wei Wang, Bergoi Ibarlucea, Chuanhui Huang, Renhao Dong, Muhannad Al Aiti, Shirong Huang and Gianaurelio Cuniberti","doi":"10.1039/D4NH00140K","DOIUrl":"10.1039/D4NH00140K","url":null,"abstract":"<p >The escalating threat of environmental issues to both nature and humanity over the past two decades underscores the urgency of addressing environmental pollutants. Metal–organic frameworks (MOFs) have emerged as highly promising materials for tackling these challenges. Since their rise in popularity, extensive research has been conducted on MOFs, spanning from design and synthesis to a wide array of applications, such as environmental remediation, gas storage and separation, catalysis, sensors, biomedical and drug delivery systems, energy storage and conversion, and optoelectronic devices, <em>etc.</em> MOFs possess a multitude of advantageous properties such as large specific surface area, tunable porosity, diverse pore structures, multi-channel design, and molecular sieve capabilities, <em>etc.</em>, making them particularly attractive for environmental applications. MOF-based composites inherit the excellent properties of MOFs and also exhibit unique physicochemical properties and structures. The tailoring of central coordinated metal ions in MOFs is critical for their adaptability in environmental applications. Although many reviews on monometallic, bimetallic, and polymetallic MOFs have been published, few reviews focusing on MOF-based composites with monometallic, bimetallic, and multi-metallic centers in the context of environmental pollutant treatment have been reported. This review addresses this gap by providing an in-depth overview of the recent progress in MOF-based composites, emphasizing their applications in hazardous gas sensing, electromagnetic wave absorption (EMWA), and pollutant degradation in both aqueous and atmospheric environments and highlighting the importance of the number and type of metal centers present. Additionally, the various categories of MOFs are summarized. MOF-based composites demonstrate significant promise in addressing environmental challenges, and this review provides a clear and valuable perspective on their potential in environmental applications.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 9","pages":" 1432-1474"},"PeriodicalIF":8.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141562014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hongshun Zheng, Baoye Zi, Tong Zhou, Guoyang Qiu, Zhongge Luo, Qingjie Lu, Alain Rafael Puente Santiago, Yumin Zhang, Jianhong Zhao, Jin Zhang, Tianwei He and Qingju Liu
The development of high-activity photocatalysts is crucial for the current large-scale development of photocatalytic hydrogen applications. Herein, we have developed a strategy to significantly enhance the hydrogen photocatalytic activity of Cu/Pr di-atom co-modified TiO2 architectures by selectively anchoring Cu single atoms on the oxygen vacancies of the TiO2 surface and replacing a trace of Ti atoms in the bulk with rare earth Pr atoms. Calculation results demonstrated that the synergistic effect between Cu single atoms and Pr atoms regulates the electronic structure of Cu/Pr–TiO2, thus promoting the separation of photogenerated carriers and their directional migration to Cu single atoms for the photocatalytic reaction. Furthermore, the d-band center of Cu/Pr–TiO2, which is located at −4.70 eV, optimizes the adsorption and desorption behavior of H*. Compared to TiO2, Pr–TiO2, and Cu/TiO2, Cu/Pr–TiO2 displays the best H* adsorption Gibbs free energy (−0.047 eV). Furthermore, experimental results confirmed that the photogenerated carrier lifetime of Cu/Pr–TiO2 is not only the longest (2.45 ns), but its hydrogen production rate (34.90 mmol g−1 h−1) also significantly surpasses those of Cu/TiO2 (13.39 mmol g−1 h−1) and Pr–TiO2 (0.89 mmol g−1 h−1). These findings open up a novel atomic perspective for the development of optimal hydrogen activity in dual-atom-modified TiO2 photocatalysts.
{"title":"Insight into mechanism for remarkable photocatalytic hydrogen evolution of Cu/Pr dual atom co-modified TiO2†","authors":"Hongshun Zheng, Baoye Zi, Tong Zhou, Guoyang Qiu, Zhongge Luo, Qingjie Lu, Alain Rafael Puente Santiago, Yumin Zhang, Jianhong Zhao, Jin Zhang, Tianwei He and Qingju Liu","doi":"10.1039/D4NH00196F","DOIUrl":"10.1039/D4NH00196F","url":null,"abstract":"<p >The development of high-activity photocatalysts is crucial for the current large-scale development of photocatalytic hydrogen applications. Herein, we have developed a strategy to significantly enhance the hydrogen photocatalytic activity of Cu/Pr di-atom co-modified TiO<small><sub>2</sub></small> architectures by selectively anchoring Cu single atoms on the oxygen vacancies of the TiO<small><sub>2</sub></small> surface and replacing a trace of Ti atoms in the bulk with rare earth Pr atoms. Calculation results demonstrated that the synergistic effect between Cu single atoms and Pr atoms regulates the electronic structure of Cu/Pr–TiO<small><sub>2</sub></small>, thus promoting the separation of photogenerated carriers and their directional migration to Cu single atoms for the photocatalytic reaction. Furthermore, the d-band center of Cu/Pr–TiO<small><sub>2</sub></small>, which is located at −4.70 eV, optimizes the adsorption and desorption behavior of H*. Compared to TiO<small><sub>2</sub></small>, Pr–TiO<small><sub>2</sub></small>, and Cu/TiO<small><sub>2</sub></small>, Cu/Pr–TiO<small><sub>2</sub></small> displays the best H* adsorption Gibbs free energy (−0.047 eV). Furthermore, experimental results confirmed that the photogenerated carrier lifetime of Cu/Pr–TiO<small><sub>2</sub></small> is not only the longest (2.45 ns), but its hydrogen production rate (34.90 mmol g<small><sup>−1</sup></small> h<small><sup>−1</sup></small>) also significantly surpasses those of Cu/TiO<small><sub>2</sub></small> (13.39 mmol g<small><sup>−1</sup></small> h<small><sup>−1</sup></small>) and Pr–TiO<small><sub>2</sub></small> (0.89 mmol g<small><sup>−1</sup></small> h<small><sup>−1</sup></small>). These findings open up a novel atomic perspective for the development of optimal hydrogen activity in dual-atom-modified TiO<small><sub>2</sub></small> photocatalysts.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 9","pages":" 1532-1542"},"PeriodicalIF":8.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141553646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaotong Yu, Yifan Li, Renjie He, Yanwei Wen, Rong Chen, Baoxing Xu and Yuan Gao
Gallium nitride offers an ideal material platform for next-generation high-power electronics devices, which enable a spectrum of applications. The thermal management of the ever-growing power density has become a major bottleneck in the performance, reliability, and lifetime of the devices. GaN/diamond heterostructures are usually adopted to facilitate heat dissipation, given the extraordinary thermal conduction properties of diamonds. However, thermal transport is limited by the interfacial conductance at the material interface between GaN and diamond, which is associated with significant mechanical stress at the atomic level. In this work, we investigate the effect of mechanical strain perpendicular to the GaN/diamond interface on the interfacial thermal conductance of heterostructures using full-atom non-equilibrium molecular dynamics simulations. We found that the heterostructure exhibits severe mechanical stress at the interface in the absence of loading, which is due to lattice mismatch. Upon tensile/compressive loading, the interfacial stress is more pronounced, and the strain is not identical across the interface owing to the contrasting elastic moduli of GaN and diamond. In addition, the interfacial thermal conductance can be notably enhanced and suppressed by tensile and compressive strains, respectively, leading to a 400% variation in thermal conductance. More detailed analyses reveal that the change in interfacial thermal conductance is related to the surface roughness and interfacial bonding strength, as described by a generalized relationship. Moreover, phonon analyses suggest that the unequal mechanical deformation under compressive strain in GaN and diamond induces different frequency shifts in the phonon spectra, leading to an enhancement in phonon overlapping energy, which promotes phonon transport at the interface and elevates the thermal conductance and vice versa for tensile strain. The effect of strain on interface thermal conductance was investigated at various temperatures. Based on the mechanical tunability of thermal conductance, we propose a conceptual design for a mechanical thermal switch that regulates thermal conductance with excellent sensitivity and high responsiveness. This study offers a fundamental understanding of how mechanical strain can adjust interface thermal conductance in GaN/diamond heterostructures with respect to mechanical stress, deformation, and phonon properties. These results and findings lay the theoretical foundation for designing thermal management devices in a strain environment and shed light on developing intelligent thermal devices by leveraging the interplay between mechanics and thermal transport.
{"title":"Mechanical regulation to interfacial thermal transport in GaN/diamond heterostructures for thermal switch†","authors":"Xiaotong Yu, Yifan Li, Renjie He, Yanwei Wen, Rong Chen, Baoxing Xu and Yuan Gao","doi":"10.1039/D4NH00245H","DOIUrl":"10.1039/D4NH00245H","url":null,"abstract":"<p >Gallium nitride offers an ideal material platform for next-generation high-power electronics devices, which enable a spectrum of applications. The thermal management of the ever-growing power density has become a major bottleneck in the performance, reliability, and lifetime of the devices. GaN/diamond heterostructures are usually adopted to facilitate heat dissipation, given the extraordinary thermal conduction properties of diamonds. However, thermal transport is limited by the interfacial conductance at the material interface between GaN and diamond, which is associated with significant mechanical stress at the atomic level. In this work, we investigate the effect of mechanical strain perpendicular to the GaN/diamond interface on the interfacial thermal conductance of heterostructures using full-atom non-equilibrium molecular dynamics simulations. We found that the heterostructure exhibits severe mechanical stress at the interface in the absence of loading, which is due to lattice mismatch. Upon tensile/compressive loading, the interfacial stress is more pronounced, and the strain is not identical across the interface owing to the contrasting elastic moduli of GaN and diamond. In addition, the interfacial thermal conductance can be notably enhanced and suppressed by tensile and compressive strains, respectively, leading to a 400% variation in thermal conductance. More detailed analyses reveal that the change in interfacial thermal conductance is related to the surface roughness and interfacial bonding strength, as described by a generalized relationship. Moreover, phonon analyses suggest that the unequal mechanical deformation under compressive strain in GaN and diamond induces different frequency shifts in the phonon spectra, leading to an enhancement in phonon overlapping energy, which promotes phonon transport at the interface and elevates the thermal conductance and <em>vice versa</em> for tensile strain. The effect of strain on interface thermal conductance was investigated at various temperatures. Based on the mechanical tunability of thermal conductance, we propose a conceptual design for a mechanical thermal switch that regulates thermal conductance with excellent sensitivity and high responsiveness. This study offers a fundamental understanding of how mechanical strain can adjust interface thermal conductance in GaN/diamond heterostructures with respect to mechanical stress, deformation, and phonon properties. These results and findings lay the theoretical foundation for designing thermal management devices in a strain environment and shed light on developing intelligent thermal devices by leveraging the interplay between mechanics and thermal transport.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 9","pages":" 1557-1567"},"PeriodicalIF":8.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141571819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Julia J. Chang, Bin Yuan, Sandro Mignuzzi, Riccardo Sapienza, Francesco Mezzadri and Ludovico Cademartiri
Partially reduced forms of titanium dioxide (sometimes called “black” titania) have attracted widespread interest as promising photocatalysts of oxidation due to their absorption in the visible region. The main approaches to produce it rely on postprocessing at high temperatures (up to 800 °C) and high pressures (up to 40 bar) or on highly reactive precursors (e.g., TiH2), and yield powders with poorly controlled sizes, shapes, defect concentrations and distributions. We describe an approach for the one-step synthesis of TiO2 colloidal nanocrystals at atmospheric pressure and temperatures as low as 280 °C. The temperature of the reaction allows the density of oxygen vacancies to be controlled by nearly two orders of magnitude independently of their size, shape, or colloidal stability. This synthetic pathway appears to produce vacancies that are homogeneously distributed in the nanocrystals, rather than being concentrated in an amorphous shell. As a result, the defects are protected from oxidation and result in stable optical properties in oxidizing environments.
{"title":"Colloidal TiO2 nanocrystals with engineered defectivity and optical properties†","authors":"Julia J. Chang, Bin Yuan, Sandro Mignuzzi, Riccardo Sapienza, Francesco Mezzadri and Ludovico Cademartiri","doi":"10.1039/D4NH00143E","DOIUrl":"10.1039/D4NH00143E","url":null,"abstract":"<p >Partially reduced forms of titanium dioxide (sometimes called “black” titania) have attracted widespread interest as promising photocatalysts of oxidation due to their absorption in the visible region. The main approaches to produce it rely on postprocessing at high temperatures (up to 800 °C) and high pressures (up to 40 bar) or on highly reactive precursors (<em>e.g.</em>, TiH<small><sub>2</sub></small>), and yield powders with poorly controlled sizes, shapes, defect concentrations and distributions. We describe an approach for the one-step synthesis of TiO<small><sub>2</sub></small> colloidal nanocrystals at atmospheric pressure and temperatures as low as 280 °C. The temperature of the reaction allows the density of oxygen vacancies to be controlled by nearly two orders of magnitude independently of their size, shape, or colloidal stability. This synthetic pathway appears to produce vacancies that are homogeneously distributed in the nanocrystals, rather than being concentrated in an amorphous shell. As a result, the defects are protected from oxidation and result in stable optical properties in oxidizing environments.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 9","pages":" 1568-1573"},"PeriodicalIF":8.0,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141547132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We would like to take this opportunity to thank all of Nanoscale Horizons' reviewers for helping to preserve quality and integrity in the nanoscience literature. We would also like to highlight the Outstanding Reviewers for Nanoscale Horizons in 2023.
{"title":"Outstanding Reviewers for <i>Nanoscale Horizons</i> in 2023.","authors":"","doi":"10.1039/d4nh90049a","DOIUrl":"https://doi.org/10.1039/d4nh90049a","url":null,"abstract":"<p><p>We would like to take this opportunity to thank all of <i>Nanoscale Horizons</i>' reviewers for helping to preserve quality and integrity in the nanoscience literature. We would also like to highlight the Outstanding Reviewers for <i>Nanoscale Horizons</i> in 2023.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" ","pages":""},"PeriodicalIF":8.0,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141496402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We would like to take this opportunity to thank all of Nanoscale Horizons’ reviewers for helping to preserve quality and integrity in the nanoscience literature. We would also like to highlight the Outstanding Reviewers for Nanoscale Horizons in 2023.
{"title":"Outstanding Reviewers for Nanoscale Horizons in 2023","authors":"","doi":"10.1039/D4NH90049A","DOIUrl":"10.1039/D4NH90049A","url":null,"abstract":"<p >We would like to take this opportunity to thank all of <em>Nanoscale Horizons</em>’ reviewers for helping to preserve quality and integrity in the nanoscience literature. We would also like to highlight the Outstanding Reviewers for <em>Nanoscale Horizons</em> in 2023.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 9","pages":" 1389-1389"},"PeriodicalIF":8.0,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142003053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Karolina Saczuk, Marta Dudek, Katarzyna Matczyszyn and Marco Deiana
The majority of self-assembled fluorescent dyes suffer from aggregation-caused quenching (ACQ), which detrimentally affects their diagnostic and therapeutic effectiveness. While aggregation-induced emission (AIE) active dyes offer a promising solution to overcome this limitation, they may face significant challenges as the intracellular environment often prevents aggregation, leading to disassembly and posing challenges for AIE fluorogens. Recent progress in signal amplification through the disassembly of ACQ dyes has opened new avenues for creating ultrasensitive optical sensors and enhancing phototherapeutic outcomes. These advances are well-aligned with cutting-edge technologies such as single-molecule microscopy and targeted molecular therapies. This work explores the concept of disaggregation-induced emission (DIE), showcasing the revolutionary capabilities of DIE-based dyes from their design to their application in sensing, bioimaging, disease monitoring, and treatment in both cellular and animal models. Our objective is to provide an in-depth comparison of aggregation versus disaggregation mechanisms, aiming to stimulate further advancements in the design and utilization of ACQ fluorescent dyes through DIE technology. This initiative is poised to catalyze scientific progress across a broad spectrum of disciplines.
大多数自组装荧光染料都存在聚集引起的淬灭(ACQ)问题,这严重影响了它们的诊断和治疗效果。虽然聚集诱导发射(AIE)活性染料为克服这一局限性提供了一种前景广阔的解决方案,但由于细胞内环境通常会阻止聚集,从而导致解体,并给 AIE 荧光剂带来挑战,因此它们可能面临重大挑战。最近在通过分解 ACQ 染料放大信号方面取得的进展,为制造超灵敏光学传感器和提高光治疗效果开辟了新途径。这些进展与单分子显微镜和靶向分子疗法等尖端技术非常吻合。这项研究探索了分解诱导发射(DIE)的概念,展示了基于 DIE 的染料从设计到应用于传感、生物成像、疾病监测以及细胞和动物模型治疗的革命性能力。我们的目标是对聚集和分解机制进行深入比较,旨在通过 DIE 技术进一步推动 ACQ 荧光染料的设计和应用。这项计划将推动各学科的科学进步。
{"title":"Advancements in molecular disassembly of optical probes: a paradigm shift in sensing, bioimaging, and therapeutics","authors":"Karolina Saczuk, Marta Dudek, Katarzyna Matczyszyn and Marco Deiana","doi":"10.1039/D4NH00186A","DOIUrl":"10.1039/D4NH00186A","url":null,"abstract":"<p >The majority of self-assembled fluorescent dyes suffer from aggregation-caused quenching (ACQ), which detrimentally affects their diagnostic and therapeutic effectiveness. While aggregation-induced emission (AIE) active dyes offer a promising solution to overcome this limitation, they may face significant challenges as the intracellular environment often prevents aggregation, leading to disassembly and posing challenges for AIE fluorogens. Recent progress in signal amplification through the disassembly of ACQ dyes has opened new avenues for creating ultrasensitive optical sensors and enhancing phototherapeutic outcomes. These advances are well-aligned with cutting-edge technologies such as single-molecule microscopy and targeted molecular therapies. This work explores the concept of disaggregation-induced emission (DIE), showcasing the revolutionary capabilities of DIE-based dyes from their design to their application in sensing, bioimaging, disease monitoring, and treatment in both cellular and animal models. Our objective is to provide an in-depth comparison of aggregation <em>versus</em> disaggregation mechanisms, aiming to stimulate further advancements in the design and utilization of ACQ fluorescent dyes through DIE technology. This initiative is poised to catalyze scientific progress across a broad spectrum of disciplines.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 9","pages":" 1390-1416"},"PeriodicalIF":8.0,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/nh/d4nh00186a?page=search","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141496401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Gayathri Devi N, The-Hung Mai, Ram K. Gupta and Phuong V. Pham
The growth of graphene on a metal substrate using chemical vapor deposition (CVD), assisted by hydrocarbons such as CH4, C3H8, C2H6, etc. leads to the formation of carbon clusters, amorphous carbon, or any other structure. These carbon species are considered as unwanted impurities; thus a conventional etching step is used simultaneously with CVD graphene growth to remove them using an etching agent. Meanwhile, art etching is a specific method of producing controlled non-Euclidean and Euclidean geometries by employing intricate and precise etching parameters or integrated growth/etching modes. Agents such as H2, O2, CH4, Ar, and others are applied as art etching agents to support the art etching technology. This technique can generate nanopores and customize the properties of graphene, facilitating specific applications such as nanodevices, nanosensors, nanofilters, etc. This comprehensive review investigates how precursor gases concurrently induce graphene growth and art etching during a chemical vapor deposition process, resulting in beautifully etched patterns. Furthermore, it discusses the techniques leading to the creation of these patterns. Finally, the challenges, uses, and perspectives of these non-Euclidean and Euclidean-shaped art etched graphene geometries are discussed.
{"title":"Art etching of graphene","authors":"Gayathri Devi N, The-Hung Mai, Ram K. Gupta and Phuong V. Pham","doi":"10.1039/D4NH00077C","DOIUrl":"10.1039/D4NH00077C","url":null,"abstract":"<p >The growth of graphene on a metal substrate using chemical vapor deposition (CVD), assisted by hydrocarbons such as CH<small><sub>4</sub></small>, C<small><sub>3</sub></small>H<small><sub>8</sub></small>, C<small><sub>2</sub></small>H<small><sub>6</sub></small>, <em>etc.</em> leads to the formation of carbon clusters, amorphous carbon, or any other structure. These carbon species are considered as unwanted impurities; thus a conventional etching step is used simultaneously with CVD graphene growth to remove them using an etching agent. Meanwhile, art etching is a specific method of producing controlled non-Euclidean and Euclidean geometries by employing intricate and precise etching parameters or integrated growth/etching modes. Agents such as H<small><sub>2</sub></small>, O<small><sub>2</sub></small>, CH<small><sub>4</sub></small>, Ar, and others are applied as art etching agents to support the art etching technology. This technique can generate nanopores and customize the properties of graphene, facilitating specific applications such as nanodevices, nanosensors, nanofilters, <em>etc.</em> This comprehensive review investigates how precursor gases concurrently induce graphene growth and art etching during a chemical vapor deposition process, resulting in beautifully etched patterns. Furthermore, it discusses the techniques leading to the creation of these patterns. Finally, the challenges, uses, and perspectives of these non-Euclidean and Euclidean-shaped art etched graphene geometries are discussed.</p>","PeriodicalId":93,"journal":{"name":"Nanoscale Horizons","volume":" 8","pages":" 1230-1249"},"PeriodicalIF":8.0,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141490069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}