Traditional computing architectures based on complementary metal-oxide semiconductor technology suffer from von Neumann computing bottleneck,1 resulting in poor computing efficiency and a huge energy consumption. To surpass the limits of conventional computation, scientists have begun to imitate the computational behavior of the human brain.2 With the advantages of highly parallel computing, high error tolerance and low power consumption, the human brain and its neural systems have inspired the rapid development of novel neuromorphic computing hardware.3 There are ∼86 billion neurons in the biological neural system. Neurons can govern the membrane potential for associative learning, memory, and information processing, with important roles in brain-inspired neuromorphic computing. Therefore, constructing artificial neuron via electronic devices is key to the realization of neuronal dynamics in the human brain.
Different types of memristive neurons have been reported recently, such as phase-change memory, Mott insulators, magnetic memory, diffusive memristors and ferroelectric memory. The integrate-and-fire neuron function and spiking neural networks could be simulated based on the integration characteristic of these artificial neurons. Besides the characteristic of integration, nonlinearity is another necessary characteristic in neuronal emulation, especially for integrating the datastream during neuromorphic computing. However, the realization of nonlinear integration of excitatory and inhibitory postsynaptic potentials has not been reported in above artificial neurons. It is in urgent need to develop a novel artificial neuron with both nonlinear and integrated capabilities for high-efficiency computing.
The research team of Harish Bhaskaran proposed an atomically thin optomemristive feedback neuron using a stack of MoS2, WS2, and graphene (Figure 1).4 The heterojunction of MoS2/WS2 acts as a neural membrane, and the graphene acts as neural soma. Different from traditional artificial neurons, the proposed two-dimensional (2D) neuron device could exhibit a rectified-type of nonlinearity in its output characteristics without the need for additional circuitry and software. The 2D optomemristive neuron shows great potential in winner-take-all learning (WTA) computational tasks and unsupervised learning, which provide guidance for atomic-scale rectified and nonlinear optoelectronic neurons.
The key performance of device is based on the combination and broadcast of electrical excitatory signals and optical inhibitory signals, which could be used for nonlinear and rectified integration of information in neuromorphic computing. Under light illumination, electron-hole pairs could be induced and separated by the intrinsic field in transition metal dichalcogenides. The electrons transit from the het