Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400701
S. Bellucci, S. Dinicola, P. Coluccia, M. Bizzarri, A. Catizone, F. Micciulla, I. Sacco, G. Ricci, A. Cucina
Treatment of the human breast adenocarcinoma cell line, MCF-7, with 0.1 mg/ml of MWCNTs, MWCNTs-COOH, or MWCNTs-OH for 72 hours induced both a decrease in cell proliferation and a reduction of the percentage of cells in S-phase of cell cycle. Moreover, all types of MWCNTs induced an increase in apoptotic cells. Overall, these data indicated that the cytotoxic effects of all types of MWCNTs are mediated both from a decrease in the proliferation rate and from an increase of apoptotic cell death. The biological effects of all types of MWCNTs could be explained with their cellular internalization.
{"title":"Multiwalled carbon nanotubes-induced cytotoxic effects on human breast adenocarcinoma cell line","authors":"S. Bellucci, S. Dinicola, P. Coluccia, M. Bizzarri, A. Catizone, F. Micciulla, I. Sacco, G. Ricci, A. Cucina","doi":"10.1109/SMICND.2012.6400701","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400701","url":null,"abstract":"Treatment of the human breast adenocarcinoma cell line, MCF-7, with 0.1 mg/ml of MWCNTs, MWCNTs-COOH, or MWCNTs-OH for 72 hours induced both a decrease in cell proliferation and a reduction of the percentage of cells in S-phase of cell cycle. Moreover, all types of MWCNTs induced an increase in apoptotic cells. Overall, these data indicated that the cytotoxic effects of all types of MWCNTs are mediated both from a decrease in the proliferation rate and from an increase of apoptotic cell death. The biological effects of all types of MWCNTs could be explained with their cellular internalization.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"61 1","pages":"37-42"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79150668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400737
A. Joita, V. Matei, O. Profirescu, S. Nedelcu, M. Bodea, M. Profirescu
The paper presents a new improved integrated charge pump based on the use of both enhanced and depletion MOS transistors as active switches and charge transfer devices in order to accommodate the voltage class requirements specific to the BCD technology. A two stage design was implemented using 2.5 MHz clock frequency to drive the charge pump capacitors.
{"title":"An active switch improved Dickson Charge Pump implemented in a BCD process","authors":"A. Joita, V. Matei, O. Profirescu, S. Nedelcu, M. Bodea, M. Profirescu","doi":"10.1109/SMICND.2012.6400737","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400737","url":null,"abstract":"The paper presents a new improved integrated charge pump based on the use of both enhanced and depletion MOS transistors as active switches and charge transfer devices in order to accommodate the voltage class requirements specific to the BCD technology. A two stage design was implemented using 2.5 MHz clock frequency to drive the charge pump capacitors.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"138 1","pages":"437-440"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77453040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400772
T. Potlog, N. Maticiuc, A. Mirzac, P. Dumitriu, D. Scortescu
Thin films of ZnTe have been prepared by close spaced sublimation technique. The deposited films have been characterized by using optical absorption, X-ray diffraction (XRD) and scanning electron microscopy (SEM). Structural investigations performed by X-ray diffraction technique showed that studied samples are polycrystalline and have a cubic (zinc blende) structure. XRD patterns have been used to determine the microstructural parameters (crystallite size, lattice parameter) of investigated films. Surface morphology studies SEM shows that the grains are uniformly distributed over the entire surface of the substrate. Optical properties of ZnTe films were studied extensively in the range of incident photon energy (0.5-4.0) eV. In the studied ZnTe films the direct transitions take place.
{"title":"Structural and optical properties of ZnTe thin films","authors":"T. Potlog, N. Maticiuc, A. Mirzac, P. Dumitriu, D. Scortescu","doi":"10.1109/SMICND.2012.6400772","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400772","url":null,"abstract":"Thin films of ZnTe have been prepared by close spaced sublimation technique. The deposited films have been characterized by using optical absorption, X-ray diffraction (XRD) and scanning electron microscopy (SEM). Structural investigations performed by X-ray diffraction technique showed that studied samples are polycrystalline and have a cubic (zinc blende) structure. XRD patterns have been used to determine the microstructural parameters (crystallite size, lattice parameter) of investigated films. Surface morphology studies SEM shows that the grains are uniformly distributed over the entire surface of the substrate. Optical properties of ZnTe films were studied extensively in the range of incident photon energy (0.5-4.0) eV. In the studied ZnTe films the direct transitions take place.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"101 1","pages":"321-324"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80846307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400736
T. Sandu, G. Boldeiu
Extinction spectra and near-field enhancement of metallic nanoparticles are calculated with a boundary integral equation (BIE) method. With the BIE method the far-field response and the near-field evanescent coupling are expressed as an eigenmode sum of resonant terms. In particular, the near-field enhancement around nanoparticles is obtained as a sum of resonant terms which acquire the spatial dependence of the eigenfunctions of the BIE operators. Moreover, the presented method permits a direct link between near-field and far field spectral properties. Finally, a numerical example is given.
{"title":"Extinction spectra and near-field enhancement of metallic nanoparticles","authors":"T. Sandu, G. Boldeiu","doi":"10.1109/SMICND.2012.6400736","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400736","url":null,"abstract":"Extinction spectra and near-field enhancement of metallic nanoparticles are calculated with a boundary integral equation (BIE) method. With the BIE method the far-field response and the near-field evanescent coupling are expressed as an eigenmode sum of resonant terms. In particular, the near-field enhancement around nanoparticles is obtained as a sum of resonant terms which acquire the spatial dependence of the eigenfunctions of the BIE operators. Moreover, the presented method permits a direct link between near-field and far field spectral properties. Finally, a numerical example is given.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"23 1","pages":"441-444"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89913652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400675
M. Damaceanu, C. Constantin, R. Rusu, M. Brumǎ
Here we present a study of two copolyimides containing oxadiazole and perylene units in the main chain with emphasis on their photo-optical properties and electrochemical behavior. Upon irradiation with light of different wavelengths these polymers showed photoluminescence maxima in the UV, blue or green-yellow spectral range. Cyclic voltammetry was performed in order to obtain information about the electrochemical behaviour of these polymers that proved their n-type behaviour.
{"title":"Polyperyleneimide — Based materials for optoelectronic devices","authors":"M. Damaceanu, C. Constantin, R. Rusu, M. Brumǎ","doi":"10.1109/SMICND.2012.6400675","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400675","url":null,"abstract":"Here we present a study of two copolyimides containing oxadiazole and perylene units in the main chain with emphasis on their photo-optical properties and electrochemical behavior. Upon irradiation with light of different wavelengths these polymers showed photoluminescence maxima in the UV, blue or green-yellow spectral range. Cyclic voltammetry was performed in order to obtain information about the electrochemical behaviour of these polymers that proved their n-type behaviour.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"135-138"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84540024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400728
A. Marzaki, V. Bidal, L. Girardeau, R. Laffont, W. Rahajandraibe, J. Portal, R. Bouchakour
A new comparator based on Dual Control Gate Floating Gate Transistor (DCG-FGT) that allow increasing input voltage range over rail-to-rail is proposed. The comparator operates with a supply voltage ranging from 1.6V to 3.6 V in 90 nm CMOS technology. The comparator is simulated under ELDO and consumes 3.2μA under typical condition.
{"title":"A new robust over rail to rail comparator based on DCG-FGT transistor","authors":"A. Marzaki, V. Bidal, L. Girardeau, R. Laffont, W. Rahajandraibe, J. Portal, R. Bouchakour","doi":"10.1109/SMICND.2012.6400728","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400728","url":null,"abstract":"A new comparator based on Dual Control Gate Floating Gate Transistor (DCG-FGT) that allow increasing input voltage range over rail-to-rail is proposed. The comparator operates with a supply voltage ranging from 1.6V to 3.6 V in 90 nm CMOS technology. The comparator is simulated under ELDO and consumes 3.2μA under typical condition.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"276 1","pages":"467-470"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90152233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400759
B. Ofrim, F. Udrea, G. Brezeanu, A. P. Hsieh
Silicon carbide (SiC) based MOS capacitor devices are used for gas sensing in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is defined and simulated. The effects of hydrogen concentration, temperature and interface traps on C-V characteristics were analysed. A comparison between structures with different oxide layer types (SiO2, TiO2 and ZnO) and thicknesses (50-10nm) was conducted. The TiO2 based structure has better performance than the SiO2 and ZnO structures. Also, the performance of the SiC MOS capacitor increases at thinner oxide layers.
{"title":"Hydrogen sensor based on silicon carbide (SiC) MOS capacitor","authors":"B. Ofrim, F. Udrea, G. Brezeanu, A. P. Hsieh","doi":"10.1109/SMICND.2012.6400759","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400759","url":null,"abstract":"Silicon carbide (SiC) based MOS capacitor devices are used for gas sensing in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is defined and simulated. The effects of hydrogen concentration, temperature and interface traps on C-V characteristics were analysed. A comparison between structures with different oxide layer types (SiO2, TiO2 and ZnO) and thicknesses (50-10nm) was conducted. The TiO2 based structure has better performance than the SiO2 and ZnO structures. Also, the performance of the SiC MOS capacitor increases at thinner oxide layers.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"193 1","pages":"367-370"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79707608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400782
N. Rezlescu, E. Rezlescu, C. Doroftei, P. Popa, M. Ignat
Eight kinds of simple semiconducting spinel ferrites, MeFe2O4, were prepared by self-combustion method. To determine the material characteristics were performed X-ray diffraction, SEM observations, EDAX spectroscopy and BET analysis. The ferrites have tested catalytically in combustion reaction of three diluted gases: acetone, ethanol and methanol. The results revealed a pronounced decrease in the combustion temperature when Mg-, Cu- and Ni-ferrites are used as catalysts.
{"title":"Semiconducting spinel ferrite powders prepared by self-combustion method for catalyst applications","authors":"N. Rezlescu, E. Rezlescu, C. Doroftei, P. Popa, M. Ignat","doi":"10.1109/SMICND.2012.6400782","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400782","url":null,"abstract":"Eight kinds of simple semiconducting spinel ferrites, MeFe2O4, were prepared by self-combustion method. To determine the material characteristics were performed X-ray diffraction, SEM observations, EDAX spectroscopy and BET analysis. The ferrites have tested catalytically in combustion reaction of three diluted gases: acetone, ethanol and methanol. The results revealed a pronounced decrease in the combustion temperature when Mg-, Cu- and Ni-ferrites are used as catalysts.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"24 1","pages":"287-290"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85155589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400676
C. C. Forin, M. Purica, E. Budianu, P. Schiopu
The paper presents the preparation of a transparent heterojunction on glass substrate consisting of p type NiO and n type ITO transparent oxidic semiconductors. NiO layer as a p type semiconductor and transparent layer was obtained by thermal oxidation at 430 oC of 50 nm metallic Ni films deposited by DC sputtering. Spectrophotometrical measurements used to investigate optical properties revealed a transmittance higher than 70% for NiO and 90% for ITO in the spectral range of 300-900 nm. The obtained p-NiO/n-ITO heterojunction exposed to ultraviolet radiation (λ ~ 240 nm) shows a good sensibility due to wide band gap of the layers.
{"title":"p-NiO/ITO transparent heterojunction — Preparation and characterization","authors":"C. C. Forin, M. Purica, E. Budianu, P. Schiopu","doi":"10.1109/SMICND.2012.6400676","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400676","url":null,"abstract":"The paper presents the preparation of a transparent heterojunction on glass substrate consisting of p type NiO and n type ITO transparent oxidic semiconductors. NiO layer as a p type semiconductor and transparent layer was obtained by thermal oxidation at 430 oC of 50 nm metallic Ni films deposited by DC sputtering. Spectrophotometrical measurements used to investigate optical properties revealed a transmittance higher than 70% for NiO and 90% for ITO in the spectral range of 300-900 nm. The obtained p-NiO/n-ITO heterojunction exposed to ultraviolet radiation (λ ~ 240 nm) shows a good sensibility due to wide band gap of the layers.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"7 1","pages":"131-134"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88040029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400650
R. Malmqvist, R. Jonsson, C. Samuelsson, S. Reyaz, P. Rantakari, A. Ouacha, T. Vaha-Heikkila, J. Varis, A. Rydberg
This paper presents an experimental study on the high power handling capabilities of some ohmic contact based and capacitive RF-MEMS switches (incl. self-actuation tests made up to 18 GHz). Such tests carried out on a series and shunt connected ohmic contact COTS MEMS switch show that self-actuation occurred at 29-37 dBm of RF input power (Pin) given a DC bias (Vbias) of 42-47 V. Corresponding high power tests of a capacitive MEMS switch made on quartz (at 4 GHz) show that self-actuation occurred at Pin = 24-31 dBm with Vbias = 0-19 V. The experimental results further indicate a potential usefulness of employing ohmic contact and capacitive MEMS switches to realize optimised low-loss wideband power limiter circuits.
{"title":"Self-actuation tests of ohmic contact and capacitive RFMEMS switches for wideband RF power limiter circuits","authors":"R. Malmqvist, R. Jonsson, C. Samuelsson, S. Reyaz, P. Rantakari, A. Ouacha, T. Vaha-Heikkila, J. Varis, A. Rydberg","doi":"10.1109/SMICND.2012.6400650","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400650","url":null,"abstract":"This paper presents an experimental study on the high power handling capabilities of some ohmic contact based and capacitive RF-MEMS switches (incl. self-actuation tests made up to 18 GHz). Such tests carried out on a series and shunt connected ohmic contact COTS MEMS switch show that self-actuation occurred at 29-37 dBm of RF input power (Pin) given a DC bias (Vbias) of 42-47 V. Corresponding high power tests of a capacitive MEMS switch made on quartz (at 4 GHz) show that self-actuation occurred at Pin = 24-31 dBm with Vbias = 0-19 V. The experimental results further indicate a potential usefulness of employing ohmic contact and capacitive MEMS switches to realize optimised low-loss wideband power limiter circuits.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"138 1","pages":"217-220"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89595771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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