Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400724
S. Benetto, A. Sanginario, D. Demarchi, S. Saddow
The present work reports on the use of different carbon-based electrodes for ElectroChemiLuminescence (ECL) detection. Carbon NanoTubes (CNT), Glassy Carbon (GC) and Silicon Carbide (SiC) were studied and their ECL performance measured. CNT electrodes allow for the detection of lower Ruthenium concentrations compared with the GC ones, but they present a minor reproducibility. Preliminary analysis of SiC electrodes shows that it is a promising material to be used in ECL, especially for biological application due to its biocompatibility.
{"title":"Carbon-based materials for ECL detection","authors":"S. Benetto, A. Sanginario, D. Demarchi, S. Saddow","doi":"10.1109/SMICND.2012.6400724","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400724","url":null,"abstract":"The present work reports on the use of different carbon-based electrodes for ElectroChemiLuminescence (ECL) detection. Carbon NanoTubes (CNT), Glassy Carbon (GC) and Silicon Carbide (SiC) were studied and their ECL performance measured. CNT electrodes allow for the detection of lower Ruthenium concentrations compared with the GC ones, but they present a minor reproducibility. Preliminary analysis of SiC electrodes shows that it is a promising material to be used in ECL, especially for biological application due to its biocompatibility.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"11 1","pages":"483-486"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81688191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400722
R. Tomescu, C. Kusko
In this paper we present a numerical analysis of two coupling mechanism between an input radiation field and a plasmonic waveguide. This analysis is realized by designing and simulating a surface plasmonic structure compound of a slab dielectric waveguide patterned on a thin film of noble metal. In order to determine what is the best coupling mechanism we realize a comparison between these two methods (air coupling and coupling through a tapered waveguide) with the direct method. For this numerical analysis we use the finite-difference timedomain (FDTF) method.
{"title":"Numerical studies of coupling in dielectric loaded plasmons","authors":"R. Tomescu, C. Kusko","doi":"10.1109/SMICND.2012.6400722","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400722","url":null,"abstract":"In this paper we present a numerical analysis of two coupling mechanism between an input radiation field and a plasmonic waveguide. This analysis is realized by designing and simulating a surface plasmonic structure compound of a slab dielectric waveguide patterned on a thin film of noble metal. In order to determine what is the best coupling mechanism we realize a comparison between these two methods (air coupling and coupling through a tapered waveguide) with the direct method. For this numerical analysis we use the finite-difference timedomain (FDTF) method.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"30 1","pages":"491-496"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85478846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400702
F. Bauer, I. Nistor, A. Mihaila, M. Antoniou, F. Udrea
15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, major breakthrough in the field of silicon power devices. Today, the SuperJunction MOSFET technologies have reached a mature stage characterized by gradual performance improvements. SuperJunction Insulated Gate Bipolar Transistors (SJ IGBTs) could interrupt this stagnation holding promise to revitalize voltage classes from 600 up to 1200 V. Such SJ IGBTs surpass by a very significant margin their SJ MOSFET counterparts both in terms of power handling capability, on-state and turn-off losses, all at the same time. On the higher end of the voltage class, SJ IGBTs would top the performance of 1.2 kV IGBTs by a similar margin.
{"title":"SuperJunction IGBTS: An evolutionary step of silicon power devices with high impact potential","authors":"F. Bauer, I. Nistor, A. Mihaila, M. Antoniou, F. Udrea","doi":"10.1109/SMICND.2012.6400702","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400702","url":null,"abstract":"15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, major breakthrough in the field of silicon power devices. Today, the SuperJunction MOSFET technologies have reached a mature stage characterized by gradual performance improvements. SuperJunction Insulated Gate Bipolar Transistors (SJ IGBTs) could interrupt this stagnation holding promise to revitalize voltage classes from 600 up to 1200 V. Such SJ IGBTs surpass by a very significant margin their SJ MOSFET counterparts both in terms of power handling capability, on-state and turn-off losses, all at the same time. On the higher end of the voltage class, SJ IGBTs would top the performance of 1.2 kV IGBTs by a similar margin.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"27-36"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90012619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400745
O. Nedelcu, I. Stanciu
In this work a passive micromixer is designed, simulated and optimized in order to obtain fully mixed liquids at the outlet. The basic configuration is a microchannel with two inlets, three outlets, and obstacles that increase the transversal component of velocity and facilitate the mixing. The simulations are based on an improved model of diffusion coefficient that depends on local concentration and properties of each mixing liquid. The model is applied to two cases of miscible fluids: water with methanol and water with glucose solution. The simulations based on this model are used to optimize design specifications. The results are discussed in terms of velocity and concentration distribution and compared to results obtained by classic approach.
{"title":"Optimization of a passive micromixer using models based on variable diffusion coefficient","authors":"O. Nedelcu, I. Stanciu","doi":"10.1109/SMICND.2012.6400745","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400745","url":null,"abstract":"In this work a passive micromixer is designed, simulated and optimized in order to obtain fully mixed liquids at the outlet. The basic configuration is a microchannel with two inlets, three outlets, and obstacles that increase the transversal component of velocity and facilitate the mixing. The simulations are based on an improved model of diffusion coefficient that depends on local concentration and properties of each mixing liquid. The model is applied to two cases of miscible fluids: water with methanol and water with glucose solution. The simulations based on this model are used to optimize design specifications. The results are discussed in terms of velocity and concentration distribution and compared to results obtained by classic approach.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"39 1","pages":"411-414"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89140505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400666
A. Avram, C. Marculescu, C. Bălan, C. Voitincu, C. Pirvulescu, M. Volmer, Andrei C. Popescu, Mona Mihailescu, M. Avram
This paper presents the fabrication and characterization of an interdigitated microelectrode array (IDMEA) biosensor. Electrochemical impedance spectroscopy and cyclic voltammetry were used to study the cellular activities of B16 melanoma cell line C57BL, including the kinetics of cell adhesion and spreading on IDMEA. Impedance spectra of B16 melanoma cells on microelectrodes were obtained in cell 0.1 M PBS with 50 mM [Fe(CN)(6)](3-/4-) as redox species. Randles equivalent circuits were used to model the electrochemical processes. Impedance spectra allowed us to analyze the changes in the double layer capacitance and charge transfer resistance due to cell attachment on the interdigitated microelectrodes.
本文介绍了一种交叉指状微电极阵列(IDMEA)生物传感器的制备和表征。采用电化学阻抗谱和循环伏安法研究了B16黑色素瘤细胞系C57BL的细胞活性，包括细胞在IDMEA上的粘附和扩散动力学。在细胞0.1 M PBS中，以50 mM [Fe(CN)(6)](3-/4-)作为氧化还原物质，获得了B16黑色素瘤细胞在微电极上的阻抗谱。采用Randles等效电路模拟电化学过程。阻抗谱允许我们分析由于电池附着在交叉微电极上而引起的双层电容和电荷转移电阻的变化。
{"title":"Microbiosensor for electrical impedance spectroscopic study of melanoma cells","authors":"A. Avram, C. Marculescu, C. Bălan, C. Voitincu, C. Pirvulescu, M. Volmer, Andrei C. Popescu, Mona Mihailescu, M. Avram","doi":"10.1109/SMICND.2012.6400666","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400666","url":null,"abstract":"This paper presents the fabrication and characterization of an interdigitated microelectrode array (IDMEA) biosensor. Electrochemical impedance spectroscopy and cyclic voltammetry were used to study the cellular activities of B16 melanoma cell line C57BL, including the kinetics of cell adhesion and spreading on IDMEA. Impedance spectra of B16 melanoma cells on microelectrodes were obtained in cell 0.1 M PBS with 50 mM [Fe(CN)(6)](3-/4-) as redox species. Randles equivalent circuits were used to model the electrochemical processes. Impedance spectra allowed us to analyze the changes in the double layer capacitance and charge transfer resistance due to cell attachment on the interdigitated microelectrodes.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"118 1","pages":"165-168"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81338562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400696
J. Millán
It is worldwide accepted that a real breakthrough in the Power Electronics field mainly comes from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high switching speed, high voltage and high temperature. These unique performances provide a qualitative change in their applications for energy processing. From energy generation to the end-user, the electric energy undergoes a number of conversions, which are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed. Future trends in device development and industrialization are also addressed.
{"title":"A review of WBG power semiconductor devices","authors":"J. Millán","doi":"10.1109/SMICND.2012.6400696","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400696","url":null,"abstract":"It is worldwide accepted that a real breakthrough in the Power Electronics field mainly comes from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high switching speed, high voltage and high temperature. These unique performances provide a qualitative change in their applications for energy processing. From energy generation to the end-user, the electric energy undergoes a number of conversions, which are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed. Future trends in device development and industrialization are also addressed.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"113 1","pages":"57-66"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73653104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400789
B. Serban, S. Costea, O. Buiu, C. Cobianu, C. Diaconu
The synthesis of pyrene-1-butyric acid (PBA)-doped polyaniline (PANI) and its oxygen sensing properties, through fluorescence quenching, are reported. The structures of both undoped PANI (emeraldine) and PBA-doped PANI are investigated by means of Fourier Transform InfraRed (FT-IR) spectroscopy. The O2 sensing capability of the synthesized layer is demonstrated through fluorescence spectroscopy performed at different air pressure values. PBA-doped PANI is expected to lead to a fluorophore with better stability and reliability than free PBA. This could bring real benefits to the overall functioning of industrial O2 sensors based on fluorescence quenching.
{"title":"Pyrene-1-butyric acid-doped polyaniline for fluorescence quenching-based oxygen sensing","authors":"B. Serban, S. Costea, O. Buiu, C. Cobianu, C. Diaconu","doi":"10.1109/SMICND.2012.6400789","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400789","url":null,"abstract":"The synthesis of pyrene-1-butyric acid (PBA)-doped polyaniline (PANI) and its oxygen sensing properties, through fluorescence quenching, are reported. The structures of both undoped PANI (emeraldine) and PBA-doped PANI are investigated by means of Fourier Transform InfraRed (FT-IR) spectroscopy. The O2 sensing capability of the synthesized layer is demonstrated through fluorescence spectroscopy performed at different air pressure values. PBA-doped PANI is expected to lead to a fluorophore with better stability and reliability than free PBA. This could bring real benefits to the overall functioning of industrial O2 sensors based on fluorescence quenching.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"265-268"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76327897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400643
A. Ioisher, E. Aleinicov, É. Badinter, N. Leporda, I. Tiginyanu, V. Ursaki
We investigate the possibility of revealing the magneto-concentration, particularly the galvano-magneto-recombination (GMR) effect in semiconductor filiform micro- and nano-strurcures (FMS u FNS). These structures represent isolated from each other micro- and nano-wires in glass envelope with the core from a semiconductor material. Different rates of charge carrier surface recombination rates are realized at diametrically opposed surfaces of cores. This difference assure conditions for the emergence of the GMR effect on segments of such FMS and FNS placed in a transversal magnetic field which leads to the change of the sample resistance proportionally to the intensity of the magnetic field.
我们研究了揭示半导体丝状微纳米结构(FMS u FNS)中磁浓度，特别是电磁复合(GMR)效应的可能性。这些结构代表了相互隔离的玻璃外壳中的微纳米线，芯由半导体材料制成。不同的载流子表面复合速率在芯的截然相反的表面实现。这种差异保证了放置在横向磁场中的FMS和FNS片段上出现GMR效应的条件，从而导致样品电阻与磁场强度成比例的变化。
{"title":"On the possibility to realize the magneto-concentration effect in filiform micro- and nano-structures","authors":"A. Ioisher, E. Aleinicov, É. Badinter, N. Leporda, I. Tiginyanu, V. Ursaki","doi":"10.1109/SMICND.2012.6400643","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400643","url":null,"abstract":"We investigate the possibility of revealing the magneto-concentration, particularly the galvano-magneto-recombination (GMR) effect in semiconductor filiform micro- and nano-strurcures (FMS u FNS). These structures represent isolated from each other micro- and nano-wires in glass envelope with the core from a semiconductor material. Different rates of charge carrier surface recombination rates are realized at diametrically opposed surfaces of cores. This difference assure conditions for the emergence of the GMR effect on segments of such FMS and FNS placed in a transversal magnetic field which leads to the change of the sample resistance proportionally to the intensity of the magnetic field.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"21 1","pages":"239-242"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84932081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400726
P. Kostov, W. Gaberl, M. Hofbauer, H. Zimmermann
Two phototransistor concepts with a size of 40×40 μm2 are presented. These devices were implemented in a 180 nm standard CMOS process without process modifications. The use of a special starting material with a low doped p- epitaxial layer on top of the high doped p+ substrate opens the possibility for achieving high bandwidths and responsivities even for deep penetrating light. Optical characterization of the devices was done at 410 nm, 675 nm and 850 nm. Bandwidths up to 67 MHz and responsivities up to 12.35 A/W were achieved. These devices are well suited for integrated optoelectronic circuits (OEICs).
{"title":"Bandwidth and gain enhanced pnp phototransistors for VIS and NIR light IN 180 nm CMOS","authors":"P. Kostov, W. Gaberl, M. Hofbauer, H. Zimmermann","doi":"10.1109/SMICND.2012.6400726","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400726","url":null,"abstract":"Two phototransistor concepts with a size of 40×40 μm2 are presented. These devices were implemented in a 180 nm standard CMOS process without process modifications. The use of a special starting material with a low doped p- epitaxial layer on top of the high doped p+ substrate opens the possibility for achieving high bandwidths and responsivities even for deep penetrating light. Optical characterization of the devices was done at 410 nm, 675 nm and 850 nm. Bandwidths up to 67 MHz and responsivities up to 12.35 A/W were achieved. These devices are well suited for integrated optoelectronic circuits (OEICs).","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"26 1","pages":"475-478"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75341047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400656
A. Stefanescu, A. Muller, G. Konstantinidis, V. Buiculescu, A. Dinescu, A. Stavrinidis, D. Neculoiu, A. Cismaru
We report on new models developed for surface acoustic wave resonators (SAW) on GaN/Si substrate working on frequencies above 5 GHz. The devices are composed of interdigital transducers (IDT) with finger and interdigit spacings 200nm wide. Different examples of modeling these devices, from 1D equivalent circuit to 3D FEM model are presented. The simulations are validated with experimental results for one port SAW and for a two port resonator SAW devicse.
{"title":"SAW GaN/Si based resonators: Modeling and experimental validation","authors":"A. Stefanescu, A. Muller, G. Konstantinidis, V. Buiculescu, A. Dinescu, A. Stavrinidis, D. Neculoiu, A. Cismaru","doi":"10.1109/SMICND.2012.6400656","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400656","url":null,"abstract":"We report on new models developed for surface acoustic wave resonators (SAW) on GaN/Si substrate working on frequencies above 5 GHz. The devices are composed of interdigital transducers (IDT) with finger and interdigit spacings 200nm wide. Different examples of modeling these devices, from 1D equivalent circuit to 3D FEM model are presented. The simulations are validated with experimental results for one port SAW and for a two port resonator SAW devicse.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"85 1","pages":"193-196"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82407012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：