Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400655
A. Bunea, D. Neculoiu, P. Calmon, A. Takacs
In this paper we present the electromagnetic modeling, fabrication and experimental results of a on-chip 2×1 folded slot dipole antenna array manufactured through silicon micromachining, working in the 60 GHz band. The measurements are in very good agreement with the simulations and demonstrate a large working band of ~20% (54-65 GHz) for a return loss better than 10 dB.
{"title":"Micromachined front-end for 60 GHz applications","authors":"A. Bunea, D. Neculoiu, P. Calmon, A. Takacs","doi":"10.1109/SMICND.2012.6400655","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400655","url":null,"abstract":"In this paper we present the electromagnetic modeling, fabrication and experimental results of a on-chip 2×1 folded slot dipole antenna array manufactured through silicon micromachining, working in the 60 GHz band. The measurements are in very good agreement with the simulations and demonstrate a large working band of ~20% (54-65 GHz) for a return loss better than 10 dB.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"3 1","pages":"197-200"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82046599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400743
G. Pristavu, C. Bartholomeusz, V. Anghel, G. Brezeanu
A solution for obtaining an exponential variation of time versus input voltage of a time-modulating circuit is investigated, implemented and its performances are measured. Most time-modulating circuits produce a delay that is linearly dependent on the input voltage. This paper proposes a new method of controlling the time delay output by making it vary exponentially with the input voltage. This solution is especially useful in aplications where the time-delay is constantly modulated by a prior error amplifier.
{"title":"Time modulation — The exponential way","authors":"G. Pristavu, C. Bartholomeusz, V. Anghel, G. Brezeanu","doi":"10.1109/SMICND.2012.6400743","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400743","url":null,"abstract":"A solution for obtaining an exponential variation of time versus input voltage of a time-modulating circuit is investigated, implemented and its performances are measured. Most time-modulating circuits produce a delay that is linearly dependent on the input voltage. This paper proposes a new method of controlling the time delay output by making it vary exponentially with the input voltage. This solution is especially useful in aplications where the time-delay is constantly modulated by a prior error amplifier.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"56 1","pages":"419-422"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84151196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400683
A. Lepadatu, I. Stavarache, A. Maraloiu, C. Palade, T. V. Serban, C. L. Magdalena
In this paper we continue the previous investigations on nanostructured GexSi1-x films. The films were deposited by magnetron sputtering and annealed in N2 atmosphere at 700 °C. Their structure was investigated and correlated with the electrical behavior. For this, conventional and high-resolution transmission electron microscopy together with selected area electron diffraction was used. Electrical measurements of current-voltage and current-temperature curves were made. The majority of crystallites that forms the films have the composition Ge50Si50 and 15-30 nm size. The I-T characteristics have Arrhenius dependence, with two activation energies interpreted as transitions between quantum confinement levels.
{"title":"Electrical behaviour related to structure of nanostructured GeSi films annealed at 700°C","authors":"A. Lepadatu, I. Stavarache, A. Maraloiu, C. Palade, T. V. Serban, C. L. Magdalena","doi":"10.1109/SMICND.2012.6400683","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400683","url":null,"abstract":"In this paper we continue the previous investigations on nanostructured GexSi1-x films. The films were deposited by magnetron sputtering and annealed in N2 atmosphere at 700 °C. Their structure was investigated and correlated with the electrical behavior. For this, conventional and high-resolution transmission electron microscopy together with selected area electron diffraction was used. Electrical measurements of current-voltage and current-temperature curves were made. The majority of crystallites that forms the films have the composition Ge50Si50 and 15-30 nm size. The I-T characteristics have Arrhenius dependence, with two activation energies interpreted as transitions between quantum confinement levels.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"7 1","pages":"109-112"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73499486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400661
A. Bragaru, M. Kusko, M. Simion, T. Ignat, M. Danila, F. Craciunoiu
This work is dealing with the deposition of self-assembled polyelectrolyte multilayers on Nafion membrane by layer-by-layer (LbL) method, to obtain a proton exchange membrane for direct methanol fuel cell. The formation of self-assembled multilayers film growth was characterized by UV-vis spectroscopy and the proton conductivity was measured using impedance spectroscopy.
{"title":"Deposition condition effect over multilayers nanocomposite membrane growth","authors":"A. Bragaru, M. Kusko, M. Simion, T. Ignat, M. Danila, F. Craciunoiu","doi":"10.1109/SMICND.2012.6400661","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400661","url":null,"abstract":"This work is dealing with the deposition of self-assembled polyelectrolyte multilayers on Nafion membrane by layer-by-layer (LbL) method, to obtain a proton exchange membrane for direct methanol fuel cell. The formation of self-assembled multilayers film growth was characterized by UV-vis spectroscopy and the proton conductivity was measured using impedance spectroscopy.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"6 1","pages":"179-182"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74911268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400788
A. Todosiciuc, A. Nicorici, E. Condrea, J. Warchulska
Temperature dependences of electric conductivity, free carrier concentration and mobility in single-crystalline PbTe: Gd samples with a varied impurity content are investigated. The features of electron transport in PbTe: Gd may be caused by a variable gadolinium valence. The striking result from the Seebeck coefficient measurements is that the thermoelectric power factor increases dramatically. Measurements of the magnetic susceptibility at low temperatures permit us to suggest that Gd ions exist in different charge states.
{"title":"Electrical properties of lead telluride single crystals doped with Gd","authors":"A. Todosiciuc, A. Nicorici, E. Condrea, J. Warchulska","doi":"10.1109/SMICND.2012.6400788","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400788","url":null,"abstract":"Temperature dependences of electric conductivity, free carrier concentration and mobility in single-crystalline PbTe: Gd samples with a varied impurity content are investigated. The features of electron transport in PbTe: Gd may be caused by a variable gadolinium valence. The striking result from the Seebeck coefficient measurements is that the thermoelectric power factor increases dramatically. Measurements of the magnetic susceptibility at low temperatures permit us to suggest that Gd ions exist in different charge states.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"269-272"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76170735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400644
L. Sirbu, V. Sergentu, R. Voicu, I. Tiginyanu, V. Ursaki
We present a theoretical model for propagation of EM wav. in various kinds of structures such as arrays of monolayer cylinders, multilayer cylinders, non-metallized and metallised pores. An analytical method was developed for the deduction of dispersion law in a multilayer nanocilinder array system. The proposed structure can be used to focus the EM wave. The simulation was performed by using FDTD model (OptiFDTD software) for conical InP pores prepared by electrochemical technique. The results of this work demonstrate the existence of ultrashort modes at low frequencies in porous systems.
{"title":"Nearfield effect in a nanotube/nanopor array system for application in EWOD devices that are operating in THz region","authors":"L. Sirbu, V. Sergentu, R. Voicu, I. Tiginyanu, V. Ursaki","doi":"10.1109/SMICND.2012.6400644","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400644","url":null,"abstract":"We present a theoretical model for propagation of EM wav. in various kinds of structures such as arrays of monolayer cylinders, multilayer cylinders, non-metallized and metallised pores. An analytical method was developed for the deduction of dispersion law in a multilayer nanocilinder array system. The proposed structure can be used to focus the EM wave. The simulation was performed by using FDTD model (OptiFDTD software) for conical InP pores prepared by electrochemical technique. The results of this work demonstrate the existence of ultrashort modes at low frequencies in porous systems.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"26 1","pages":"235-238"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82268391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400755
J. Postel-Pellerin, G. Micolau, P. Chiquet, R. Laffont, F. Lalande, J. Ogier
In this paper we develop a method to study and to activate charge loss in a Non-volatile Memories array. We first detail an original date retention test under gate stress on a simple and statistical tool. Then we present the experimental results we obtained after more than 700h at 85°C and 150°C, for six different gate stress conditions. Finally, we extract the activation energy for the observed charge losses, using to different approaches, leading to a discussion on the extracted values and to perspectives for this work.
{"title":"Charge loss activation during non-volatiles memory data retention","authors":"J. Postel-Pellerin, G. Micolau, P. Chiquet, R. Laffont, F. Lalande, J. Ogier","doi":"10.1109/SMICND.2012.6400755","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400755","url":null,"abstract":"In this paper we develop a method to study and to activate charge loss in a Non-volatile Memories array. We first detail an original date retention test under gate stress on a simple and statistical tool. Then we present the experimental results we obtained after more than 700h at 85°C and 150°C, for six different gate stress conditions. Finally, we extract the activation energy for the observed charge losses, using to different approaches, leading to a discussion on the extracted values and to perspectives for this work.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"24 1","pages":"377-380"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74464623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400739
A. Beg, Valeriu Beiu, W. Ibrahim
Digital circuits can be synthesized with only NANDs or NORs, while delay and power can be quite different. Scaling transistors increases their sensitivity to variations and in particular to threshold voltage variations (σVTH). Sizing transistors trades delay versus power, while unconventional sizing (e.g., L >; Lmin, W/L <; 1, fine-grained increments, multifinger FETs) was proposed recently for reducing power and also σVTH. Using Monte Carlo simulations we perform an analysis of how sensitive the output voltages of NAND-2 and NOR-2 are to increasing L over Lmin, and examine how such sizing affects delay, power, and power-delay-product of these two gates.
{"title":"Unconventional transistor sizing for reducing power alleviates threshold voltage variations","authors":"A. Beg, Valeriu Beiu, W. Ibrahim","doi":"10.1109/SMICND.2012.6400739","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400739","url":null,"abstract":"Digital circuits can be synthesized with only NANDs or NORs, while delay and power can be quite different. Scaling transistors increases their sensitivity to variations and in particular to threshold voltage variations (σVTH). Sizing transistors trades delay versus power, while unconventional sizing (e.g., L >; Lmin, W/L <; 1, fine-grained increments, multifinger FETs) was proposed recently for reducing power and also σVTH. Using Monte Carlo simulations we perform an analysis of how sensitive the output voltages of NAND-2 and NOR-2 are to increasing L over Lmin, and examine how such sizing affects delay, power, and power-delay-product of these two gates.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"3 1","pages":"429-432"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87266476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400668
D. Stan, C. Mihailescu, R. Iosub, M. Savin, B. Ion, R. Gavrila
In the present study a gold functionalized self assembled monolayers (SAMs) surface for a label-free human heart-type fatty acid binding protein (HFABP) detection was developed. This assay was studied by electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV). It was demonstrated that the gold thiol monolayer was formatted after 35 minutes and a good linear relationship between the current signals and the concentrations of human HFABP was achieved from 98 pg mL-1 to 25 ng mL-1. The results suggest that the gold surface will be promising in the development of electrochemical immunosensor that can be used to accurately detect H-FABP concentration in human serum samples. Atomic force microscopy (AFM) studies were realized to study the surface morphology.
本研究开发了一种金功能化自组装单层膜(SAMs)表面，用于检测无标记的人心脏型脂肪酸结合蛋白(HFABP)。采用电化学阻抗谱(EIS)和循环伏安法(CV)对该方法进行了研究。结果表明，金硫醇单分子层在35分钟后形成，电流信号与人HFABP浓度在98 pg mL-1 ~ 25 ng mL-1之间呈良好的线性关系。结果表明，金表面在开发能准确检测人血清样品中H-FABP浓度的电化学免疫传感器方面具有广阔的应用前景。实现了原子力显微镜(AFM)的表面形貌研究。
{"title":"Development of an immunoassay for impedance-based detection of heart-type fatty acid binding protein","authors":"D. Stan, C. Mihailescu, R. Iosub, M. Savin, B. Ion, R. Gavrila","doi":"10.1109/SMICND.2012.6400668","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400668","url":null,"abstract":"In the present study a gold functionalized self assembled monolayers (SAMs) surface for a label-free human heart-type fatty acid binding protein (HFABP) detection was developed. This assay was studied by electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV). It was demonstrated that the gold thiol monolayer was formatted after 35 minutes and a good linear relationship between the current signals and the concentrations of human HFABP was achieved from 98 pg mL-1 to 25 ng mL-1. The results suggest that the gold surface will be promising in the development of electrochemical immunosensor that can be used to accurately detect H-FABP concentration in human serum samples. Atomic force microscopy (AFM) studies were realized to study the surface morphology.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"18 1","pages":"157-160"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91525037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400753
I. Câmpanu, T. Salajan, R. Onet, M. Neag
This paper presents the comparative analysis of four implementation of a polyphase filter with the IF frequency of 1MHz and the passband width of 700 kHz. All versions employ the OA-RC technique but have different topologies: the classical structure based on lossy integrators, then two structures derived from the well-known Tow-Thomas and Sallen-Key real biquads and a novel topology, based on the Rauch structure. First, the requirements for the active cell - the OA - are derived by analysing the effects the OA finite gain-bandwidth product and (possible large) output resistance has on the filter performance for each topology; then an OA that meets the requirements is designed in a standard 0.18um CMOS process, optimized for low power consumption. The extensive set of simulation results presented here allows a detailed comparison between the four designs, targeting same specifications.
{"title":"Comparative analysis of four second-order OA-RC polyphase filters for an ISM Low-IF receiver","authors":"I. Câmpanu, T. Salajan, R. Onet, M. Neag","doi":"10.1109/SMICND.2012.6400753","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400753","url":null,"abstract":"This paper presents the comparative analysis of four implementation of a polyphase filter with the IF frequency of 1MHz and the passband width of 700 kHz. All versions employ the OA-RC technique but have different topologies: the classical structure based on lossy integrators, then two structures derived from the well-known Tow-Thomas and Sallen-Key real biquads and a novel topology, based on the Rauch structure. First, the requirements for the active cell - the OA - are derived by analysing the effects the OA finite gain-bandwidth product and (possible large) output resistance has on the filter performance for each topology; then an OA that meets the requirements is designed in a standard 0.18um CMOS process, optimized for low power consumption. The extensive set of simulation results presented here allows a detailed comparison between the four designs, targeting same specifications.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"18 1","pages":"385-388"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88920049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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