Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400778
L. Nedelcu, C. Busuioc, M. Banciu, R. Ramer
Ba(X1/3Ta2/3)O3 (X=Zn, Mg) perovskites were prepared by using the solid state reaction method. X-ray diffraction and scanning electron microscopy were employed for structural and morphological characterization of Ba(X1/3Ta2/3)O3 samples. The dielectric constant of the resonators was 28 for Ba(Zn1/3Ta2/3)O3 and 24 for Ba(Mg1/3Ta2/3)O3. A strong influence of the cation ordering on the dielectric loss has been found. The achieved values of Q × f product, ranging from 100 to 200 THz, make Ba(X1/3Ta2/3)O3 dielectric resonators attractive for microwave and millimetre-wave applications.
{"title":"Ba(X1/3Ta2/3)O3 complex perovskites for microwave and millimeter-wave applications","authors":"L. Nedelcu, C. Busuioc, M. Banciu, R. Ramer","doi":"10.1109/SMICND.2012.6400778","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400778","url":null,"abstract":"Ba(X<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub> (X=Zn, Mg) perovskites were prepared by using the solid state reaction method. X-ray diffraction and scanning electron microscopy were employed for structural and morphological characterization of Ba(X<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub> samples. The dielectric constant of the resonators was 28 for Ba(Zn<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub> and 24 for Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub>. A strong influence of the cation ordering on the dielectric loss has been found. The achieved values of Q × f product, ranging from 100 to 200 THz, make Ba(X<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub> dielectric resonators attractive for microwave and millimetre-wave applications.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"96 1","pages":"303-306"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86471356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400652
S. G. Ioan, M. I. Andreea, S. Alexandra, C. Mihaela, V. Marius, B. Da Ros
The paper describes a method of reducing the return loss (RL) of a CoPlanar Waveguide (CPW) Composite Right/Left-Handed (CRLH) zeroth order resonance (ZOR) antenna by matching the radiating structure to the characteristic impedance Z0 of a mm-wave circuit. The frequency of the studied antenna was f = 40 GHz. The initial RL value was S11 = -16.21dB. The matching method use reactive stubs of length l placed on the antenna feeding line at a suitable point d. After that, the return loss at the feeding line input drastically improved to S11 = -43.50 dB, demonstrating effectiveness of the matching process.
{"title":"Return loss reduction of the metamaterial CRLH antenna using short-ended reactive stubs","authors":"S. G. Ioan, M. I. Andreea, S. Alexandra, C. Mihaela, V. Marius, B. Da Ros","doi":"10.1109/SMICND.2012.6400652","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400652","url":null,"abstract":"The paper describes a method of reducing the return loss (RL) of a CoPlanar Waveguide (CPW) Composite Right/Left-Handed (CRLH) zeroth order resonance (ZOR) antenna by matching the radiating structure to the characteristic impedance Z0 of a mm-wave circuit. The frequency of the studied antenna was f = 40 GHz. The initial RL value was S11 = -16.21dB. The matching method use reactive stubs of length l placed on the antenna feeding line at a suitable point d. After that, the return loss at the feeding line input drastically improved to S11 = -43.50 dB, demonstrating effectiveness of the matching process.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"28 6","pages":"209-212"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91492335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400720
M. Kusko
In this work is analyzed from the theoretical point of view the possibility to obtain a surface plasmon resonance immunosensor based on BK7 glass prism. This proposed low-cost sensor works at fixed angle and fixed wavelength by detecting the variation of the output intensity. From the variation of the intensity with the SPR angle the optimal value of the external incidence has been assessed. The results presented in this study demonstrated the feasibility of the proposed sensor.
{"title":"Design of low cost surface plasmon resonance sensor","authors":"M. Kusko","doi":"10.1109/SMICND.2012.6400720","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400720","url":null,"abstract":"In this work is analyzed from the theoretical point of view the possibility to obtain a surface plasmon resonance immunosensor based on BK7 glass prism. This proposed low-cost sensor works at fixed angle and fixed wavelength by detecting the variation of the output intensity. From the variation of the intensity with the SPR angle the optimal value of the external incidence has been assessed. The results presented in this study demonstrated the feasibility of the proposed sensor.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"53 1","pages":"251-254"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90625819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400764
F. Pezzimenti, F. D. Della Corte
Steady-state and switching characteristics of a normally-off 4H-SiC Bipolar Mode FET (BMFET) are investigated in a wide range of temperatures by means of an intensive simulation analysis useful for a first time ever realization of this device in SiC. An output drain current density up to 500 A/cm2, an high current gain and an on-resistance as low as 2 mΩ·cm2, are calculated when the gate regions are forward biased. The turn-off delay is in the order of 5 ns and the blocking voltage is higher than 1.2 kV. This study is supported by experimental data on the gate-drain and gate-source p-i-n diodes embedded in the BMFET structure.
{"title":"Static and transient analysis of a 4H-SiC trench Bipolar Mode FET with normally-off characteristics","authors":"F. Pezzimenti, F. D. Della Corte","doi":"10.1109/SMICND.2012.6400764","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400764","url":null,"abstract":"Steady-state and switching characteristics of a normally-off 4H-SiC Bipolar Mode FET (BMFET) are investigated in a wide range of temperatures by means of an intensive simulation analysis useful for a first time ever realization of this device in SiC. An output drain current density up to 500 A/cm2, an high current gain and an on-resistance as low as 2 mΩ·cm2, are calculated when the gate regions are forward biased. The turn-off delay is in the order of 5 ns and the blocking voltage is higher than 1.2 kV. This study is supported by experimental data on the gate-drain and gate-source p-i-n diodes embedded in the BMFET structure.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"2 1","pages":"347-350"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82009725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400748
A. Bonea, T. Hassinen, B. Ofrim, D. Bonfert, P. Svasta
Organic thin film transistors (OTFTs) are of significant interest for the development of organic electronics. The devices described in this paper, through measurements, analytic extraction of parameters and simulations, are organic transistor having Polytriarylamine (PTAA) as semiconductor. This paper refers to the determination of the source and drain contact resistance of these PTAA organic transistors. The MATLAB Simulink model is based on an analytic model, for which DC Sweep and parametric simulations were employed in order to obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This mathematical method uses results on the total channel resistance of the thin film transistors with various channel lengths in order to extrapolate the contact resistance. The TLM structures considered here are bottom contact top gate OTFTs with interdigitated electrodes of various channel lengths. The values of the contact resistance are considered equal due to the symmetry of the measured structure.
{"title":"Analytical modeling of contact resistance in organic transistors","authors":"A. Bonea, T. Hassinen, B. Ofrim, D. Bonfert, P. Svasta","doi":"10.1109/SMICND.2012.6400748","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400748","url":null,"abstract":"Organic thin film transistors (OTFTs) are of significant interest for the development of organic electronics. The devices described in this paper, through measurements, analytic extraction of parameters and simulations, are organic transistor having Polytriarylamine (PTAA) as semiconductor. This paper refers to the determination of the source and drain contact resistance of these PTAA organic transistors. The MATLAB Simulink model is based on an analytic model, for which DC Sweep and parametric simulations were employed in order to obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This mathematical method uses results on the total channel resistance of the thin film transistors with various channel lengths in order to extrapolate the contact resistance. The TLM structures considered here are bottom contact top gate OTFTs with interdigitated electrodes of various channel lengths. The values of the contact resistance are considered equal due to the symmetry of the measured structure.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"34 1","pages":"399-402"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83619562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400775
T. Ignat, M. Kusko, A. Dinescu, M. Danila, A. Bragaru, M. Simion
Although the metallic/metal oxide nanoparticles (Me(O)NPs) are frequently proposed and even used in biomedical applications, a study focused on their toxicological effects in relation with the physico-chemical properties is necessary. This paper is focused on characterization of three types of ligand stabilized Me(O)NPs - silver, gold and iron oxide - synthesized by two-phase liquid-liquid method; thus different methods have been used to obtain a complete image of their state, meaning size, shape, crystallinity, chemical composition, and furthermore surface charge or aglomeration in aqueous suspensions. It is shown that modification of the suspension parameters lead to dramatic changes of the nanoparticles mean size distribution, stability and zeta potential.
{"title":"Nanomaterials: Fabrication and investigation of dispersions for toxicological studies","authors":"T. Ignat, M. Kusko, A. Dinescu, M. Danila, A. Bragaru, M. Simion","doi":"10.1109/SMICND.2012.6400775","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400775","url":null,"abstract":"Although the metallic/metal oxide nanoparticles (Me(O)NPs) are frequently proposed and even used in biomedical applications, a study focused on their toxicological effects in relation with the physico-chemical properties is necessary. This paper is focused on characterization of three types of ligand stabilized Me(O)NPs - silver, gold and iron oxide - synthesized by two-phase liquid-liquid method; thus different methods have been used to obtain a complete image of their state, meaning size, shape, crystallinity, chemical composition, and furthermore surface charge or aglomeration in aqueous suspensions. It is shown that modification of the suspension parameters lead to dramatic changes of the nanoparticles mean size distribution, stability and zeta potential.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"57 1","pages":"309-312"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90771720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400646
N. Dumbravescu, V. Buiculescu
This paper presents some aspects encountered in fabrication of surface acoustic wave (SAW) manufactured on langasite substrate. Results obtained after the first electrical test didn't correspond to our expectations, although all devices passed through on optical inspection. It followed the de-capsulation of defective devices and the searching for failure causes. We detected several such mechanisms and after fixing them, we encapsulated and tested again the devices. Now, all devices were functioning properly. Comparative results of electrical test (before and after fixing the failure) are given.
{"title":"Some technological and encapsulation issues of SAWS manufactured on langasite","authors":"N. Dumbravescu, V. Buiculescu","doi":"10.1109/SMICND.2012.6400646","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400646","url":null,"abstract":"This paper presents some aspects encountered in fabrication of surface acoustic wave (SAW) manufactured on langasite substrate. Results obtained after the first electrical test didn't correspond to our expectations, although all devices passed through on optical inspection. It followed the de-capsulation of defective devices and the searching for failure causes. We detected several such mechanisms and after fixing them, we encapsulated and tested again the devices. Now, all devices were functioning properly. Comparative results of electrical test (before and after fixing the failure) are given.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"8 1","pages":"227-230"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75222329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400706
L. Baggen, B. Sanadgol, M. Boettcher, S. Holzwarth, O. Litschke
This article presents an (non-exhaustive) overview of aspects encountered during the design and realisation of highly integrated antenna frontends dedicated to satellite communication-on-the-move. This involves aspects like what are the basic requirements, how to realise the frontend with respect to the mobile platform and which manufacturing technologies to use? Typical problems encountered are discussed and examples from real life are presented to show state-of the- art solutions.
{"title":"Designing integrated frontends for satcom applications","authors":"L. Baggen, B. Sanadgol, M. Boettcher, S. Holzwarth, O. Litschke","doi":"10.1109/SMICND.2012.6400706","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400706","url":null,"abstract":"This article presents an (non-exhaustive) overview of aspects encountered during the design and realisation of highly integrated antenna frontends dedicated to satellite communication-on-the-move. This involves aspects like what are the basic requirements, how to realise the frontend with respect to the mobile platform and which manufacturing technologies to use? Typical problems encountered are discussed and examples from real life are presented to show state-of the- art solutions.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"12 1","pages":"11-18"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73150131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400732
R. Pascu, F. Craciunoiu, M. Kusko, F. Draghici, A. Dinescu, M. Danila
The Schottky diode for temperature sensor based on 4H-SiC is presented. This paper is focused on the improvement of the Schottky contact and interface stabilization using an annealing in Ar atmosphere. The diodes have been measured in range of temperature 50-150°C.
{"title":"The effect of the post-metallization annealing of Ni/n-type 4H-SiC SCHOTTKY contact","authors":"R. Pascu, F. Craciunoiu, M. Kusko, F. Draghici, A. Dinescu, M. Danila","doi":"10.1109/SMICND.2012.6400732","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400732","url":null,"abstract":"The Schottky diode for temperature sensor based on 4H-SiC is presented. This paper is focused on the improvement of the Schottky contact and interface stabilization using an annealing in Ar atmosphere. The diodes have been measured in range of temperature 50-150°C.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"86 1","pages":"457-460"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84134714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400663
K. Tanaka, N. Happo, M. Fujiwara
We fabricated Si: SiO2 films and assessed its optical characteristics using photoluminescence spectroscopy. The Si: SiO2 films were deposited by sputtering Si tablets (15 mm square) onto a SiO2 target (108 mm diameter). Using excitation by a He-Cd laser, photoluminescence was emitted from the films. The bluish color emission was seen by the naked eye at room temperature. Photoluminescence spectra, that were measured from 400 nm to 1100 nm, were wide and continuous with some peaks. After annealing, that emission of photoluminescence decreased and its color changed to red.
{"title":"Annealing effects and optical properties of Si: SiO2 films prepared by radio frequency sputter","authors":"K. Tanaka, N. Happo, M. Fujiwara","doi":"10.1109/SMICND.2012.6400663","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400663","url":null,"abstract":"We fabricated Si: SiO2 films and assessed its optical characteristics using photoluminescence spectroscopy. The Si: SiO2 films were deposited by sputtering Si tablets (15 mm square) onto a SiO2 target (108 mm diameter). Using excitation by a He-Cd laser, photoluminescence was emitted from the films. The bluish color emission was seen by the naked eye at room temperature. Photoluminescence spectra, that were measured from 400 nm to 1100 nm, were wide and continuous with some peaks. After annealing, that emission of photoluminescence decreased and its color changed to red.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"43 1","pages":"171-174"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80942911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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